CN102412232A - Apparatus and method for short circuit defect testing - Google Patents
Apparatus and method for short circuit defect testing Download PDFInfo
- Publication number
- CN102412232A CN102412232A CN2010102925507A CN201010292550A CN102412232A CN 102412232 A CN102412232 A CN 102412232A CN 2010102925507 A CN2010102925507 A CN 2010102925507A CN 201010292550 A CN201010292550 A CN 201010292550A CN 102412232 A CN102412232 A CN 102412232A
- Authority
- CN
- China
- Prior art keywords
- short
- electric wire
- range missile
- conductive layer
- comb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides an apparatus for short circuit testing. The apparatus comprises a first comb structure body and a second comb structure body. The first comb structure body is formed by a plurality of first short conductor wire chains that are parallel to each other. The second comb structure body is formed by a second conductor wire and a plurality of short conductor wire chains that are vertical to the second conductor wire and are parallel to each other. One ends of all the second conductor wire chains are directly connected with the second conductor wire, wherein the one ends of all the second conductor wire chains are far away from the first short conductor wire chains. And the first short conductor wire chains and the second short conductor wire chains are arranged at intervals. In addition, the invention also provides a method for short circuit defect testing. According to a technical scheme of the invention, a short circuit defect breakdown point position can be accurately localized based on a comparative analysis of passive voltages.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, particularly a kind of circuit defect testing apparatus and method.
Background technology
At present, make in the process of wafer (wafer) in semiconductor integrated circuit (IC) technology, through the connection between the semiconductor device of making on the metal interconnected realization wafer, metal interconnected mainly by metal connecting line as transmitting medium.Yet the metal connecting line circuit defect is one of main failure mode of IC technology, and wafer yield is had very big influence.Therefore, the metal connecting line circuit defect is monitored the improvement that can promote IC technology with failure analysis, improve the wafer rate of finished products.Designed failure analysis test in the prior art to the metal connecting line circuit defect.
The progress of As IC technology, the IC process constantly dwindles, and metal connecting line width and circuit defect size often have only tens to the hundreds of nanometer.In order further the metal connecting line circuit defect to be carried out failure analysis, available technology adopting scanning electron microscopy (SEM), FIB (FIB) or transmission electron microscope physical analysis means such as (TEM), the pattern of circuit defect in the observation metal connecting line.Above-mentioned physical analysis means must could clearly be observed the pattern of circuit defect under enough big enlargement ratio, can only observe the metal connecting line of several microns length ranges at every turn, but the length of every strip metal line is generally the hundreds of micron.Therefore, need be before observing the pattern of metal connecting line circuit defect with the physical analysis means, the position of on metal connecting line, orienting circuit defect.
Shown in Figure 1 is a kind of circuit defect testing apparatus in the prior art.In wafer, have many conductive layers from bottom to top, be called the 1st conductive layer, the 2nd conductive layer, the 3rd conductive layer respectively ... the N conductive layer is separated by insulating medium layer between the adjacent conductive layer.This circuit defect testing apparatus is arranged in the n conductive layer and the n+1 conductive layer of wafer, and n and N are natural number, and n≤N-1.The rectangle that white is filled among Fig. 1 is represented the n+1 conductive layer, and the rectangle that shade is filled is represented the n conductive layer, and the little rectangle of black then representes to be used to connect the conductive through hole of these two conductive layers.The circuit defect testing apparatus comprises two comb-type structure bodies, is labeled as comb-type structure body A and comb-type structure body B respectively.With comb-type structure body B is example, and it is by forming as the conductor wire 101 of comb handle with as several chain conductor wires of broach.Said chain conductor wire is m short-range missile electric wire of arranging along same rectilinear direction and " the short-range missile electric wire-conductive through hole-short-range missile electric wire chain " that connects m-1 conductive through hole composition of these short-range missile electric wires, and m is a natural number.Broach with the comb-type structure body B shown in Figure 1 rightmost side is an example; An end that is positioned at the first short-range missile electric wire 102 of n+1 conductive layer directly links to each other with conductor wire 101 as broach, and the other end is realized being electrically connected with an end of the second short-range missile electric wire 104 that is positioned at the n conductive layer through conductive through hole 103; The other end of the second short-range missile electric wire 104 is then realized being electrically connected with the 3rd short-range missile electric wire 106 that is positioned at the n+1 conductive layer through conductive through hole 105.By that analogy, the least significant end of this broach is the m short-range missile electric wire 107 that is positioned at the n conductive layer.Among Fig. 1, m=6.Certainly m also can get other numerical value.When m was odd number, the short-range missile electric wire of the least significant end of broach was positioned at the n+1 conductive layer, and when m was even number, the short-range missile electric wire of the least significant end of broach was positioned at the n conductive layer.Equidistantly be parallel to each other between other each broach of comb-type structure body B, and have the identical structure of broach of the above-mentioned rightmost side.The comb of comb-type structure body A and comb-type structure body B is being parallel to each other, and the broach relative spacing is arranged.
When carrying out the circuit defect analysis, circuit defect testing apparatus shown in Figure 1 is carried out passive voltage-contrast (PVC, Passive Voltage Contrast) analysis, judge whether produce failpoint, specific practice is following:
With comb-type structure body B ground connection shown in Figure 1, make the comb handle of comb-type structure body B and the current potential of each broach all remain on zero potential.Adopt scanning electron microscopy (SEM) to observe this circuit defect testing apparatus.Under normal circumstances, comb-type structure body A and comb-type structure body B are insulated from each other, therefore through the suitable display image contrast of adjustment, can manifest high bright state so that comb-type structure body B is whole, and the whole dark state that is in of comb-type structure body A.
If occurred the circuit defect failpoint between n conductive layer and the n+1 conductive layer; Be short-circuited between a pair of broach that this failpoint makes among comb-type structure body B and the comb-type structure body A and this failpoint is nearest; If with comb-type structure body B ground connection, then the current potential of comb-type structure body A also can be 0.When observing this test structure through SEM like this, comb-type structure body A and comb-type structure body B can manifest high bright state.If this situation appears in observation, then judge in this circuit defect testing apparatus the circuit defect failpoint to occur.
But this method can only be judged and produced the circuit defect failpoint in the circuit defect testing apparatus, but can not accurately locate the position that the circuit defect failpoint occurs.
Need further to pass through the mode of making alive/electric current in the prior art; Resistance variations abnormal test (the OBIRCH of laser beam derivation; Optical Beam Induced Resistance Change)/far infrared probe electrically analyzes (MCT EFA) analysis tool; Capture the focus that the failpoint zone forms, thus the exact position of orienting failpoint; Applied analysis instrument FIB, TEM do the type looks in cross section, the analysis of size and failpoint again.Problem is in electrical analysis (EFA) process, makes test structure destroy because the circuit defect testing apparatus is applied excessive pressure, and human factor can not find the real causes of structural failure to structural damage when causing analysis.
Summary of the invention
The invention provides a kind of circuit defect testing apparatus and method, can locate circuit defect failpoint position comparatively exactly through passive voltage-contrast analysis.
A kind of circuit defect testing apparatus that the embodiment of the invention proposes comprises the first comb-type structure body and the second comb-type structure body; The said first comb-type structure body comprises some first parallel short-range missile electric wire chains; The said second comb-type structure body is made up of second conductor wire and parallel some second short-range missile electric wire chains, and said second short-range missile electric wire chain distance first a short-range missile electric wire chain end far away directly links to each other with second conductor wire; The said first short-range missile electric wire chain and the second short-range missile electric wire chain are arranged at interval.
Preferably, said second conductor wire is positioned at first conductive layer; The said first short-range missile electric wire chain is made up of the some first short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some first conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said first conductive through hole connect one first short-range missile electric wire respectively.
Preferably, said second conductor wire is positioned at first conductive layer; The said second short-range missile electric wire chain is made up of the some second short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some second conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said second conductive through hole connect one second short-range missile electric wire respectively.
Preferably; This device also comprises first conductor wire that is positioned at the 3rd conductive layer; And some the 3rd conductive through holes that pass the insulating barrier between said first conductive layer and the 3rd conductive layer; One end of the 3rd conductive through hole connects said first conductor wire, and the other end of the 3rd conductive through hole connects distance second a short-range missile electric wire chain end far away of the said first short-range missile electric wire chain.
Preferably, the material of said conductor wire is copper, aluminium or polysilicon.
Preferably, the material of said conductive through hole is copper or tungsten.
Preferably, the material of said insulating medium layer is a silica.
The embodiment of the invention also proposes a kind of circuit defect method of testing, comprises the steps:
With the said second comb-type structure body ground connection, adopt this circuit defect testing apparatus of sem observation, and adjust suitable display image contrast;
When the high bright state of the second comb-type structure body whole show, and the first comb-type structure body integral body is judged no circuit defect when being in dark state; When the high bright state of the second comb-type structure body whole show; And at least one first short-range missile electric wire chain of the first comb-type structure body presents high bright state; And when at least one first short-range missile electric wire chain of the first attribute structure body presents dark state, judge that then there is the circuit defect failpoint in the position between said first short-range missile electric wire chain that presents high bright state and the second short-range missile electric wire chain adjacent with this first short-range missile electric wire chain.
Can find out that from above technical scheme the structure of the first comb-type structure body in the circuit defect testing apparatus is changed, and each broach of the first comb-type structure body is insulated from each other; When carrying out the PVC analysis; If the circuit defect failpoint occurs, in all broach of the first comb-type structure body, have only that broach nearest can be in high bright state apart from failpoint; And other each broach still are in dark state, so just can be easy to confirm the position of failpoint.
Description of drawings
Fig. 1 is a kind of circuit defect testing apparatus sketch map in the prior art;
The circuit defect testing apparatus sketch map that Fig. 2 proposes for the embodiment of the invention;
The display effect sketch map of circuit defect testing apparatus when the analysis of inefficacy property that Fig. 3 proposes for the embodiment of the invention under the normal condition;
The display effect sketch map of circuit defect testing apparatus when the analysis of inefficacy property that the embodiment of the invention proposes under the situation of circuit defect appears in Fig. 4.
Embodiment
For make the object of the invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
The circuit defect testing apparatus sketch map that Fig. 2 proposes for the embodiment of the invention.A plurality of conductive layers are arranged in wafer from bottom to top, be called the 1st conductive layer, the 2nd conductive layer, the 3rd conductive layer respectively ... the N conductive layer is separated by insulating medium layer between the adjacent conductive layer.This circuit defect testing apparatus is arranged in n conductive layer, n+1 conductive layer and the n+2 conductive layer of wafer, and n and N are natural number, and n≤N-2.N conductive layer in the chip has been shown among Fig. 2, has been positioned at the n+1 conductive layer on the n conductive layer, and be positioned at the n+2 conductive layer on the n+1 conductive layer.The rectangle that snow is filled among Fig. 2 is represented the n+2 conductive layer, and the rectangle that white is filled is represented the n+1 conductive layer, and the rectangle that shade is filled is represented the n conductive layer, and the little rectangle of black then representes to be used to connect the conductive through hole of adjacent conductive layer.The circuit defect testing apparatus comprises two comb-type structure bodies, is labeled as comb-type structure body C and comb-type structure body D respectively.Wherein, the structure of comb-type structure body D is consistent with comb-type structure body B of the prior art shown in Figure 1.Comb-type structure body C is by forming as the conductor wire 201 of comb handle with as several chain conductor wires of broach.Said chain conductor wire is m short-range missile electric wire of arranging along same rectilinear direction and " the short-range missile electric wire-conductive through hole-short-range missile electric wire chain " that connects m-1 conductive through hole composition of these short-range missile electric wires, and m is a natural number.Broach with the comb-type structure body C shown in Figure 2 leftmost side is an example; An end that is positioned at the first short-range missile electric wire 203 of n+1 conductive layer is realized being electrically connected through conductive through hole 202 with the conductor wire 201 of the conduct comb handle that is positioned at the n+2 conductive layer, and the other end of the first short-range missile electric wire 203 is realized being electrically connected with an end of the second short-range missile electric wire 205 that is positioned at the n conductive layer through conductive through hole 204; The other end of the second short-range missile electric wire 205 is then realized being electrically connected with the 3rd short-range missile electric wire 207 that is positioned at the n+1 conductive layer through conductive through hole 206.By that analogy, the least significant end of this broach is the m short-range missile electric wire 208 that is positioned at the n conductive layer.Among Fig. 2, m=6.In other embodiments, if m is an odd number, then the short-range missile electric wire of broach least significant end is positioned at the n+1 conductive layer.
Equidistantly be parallel to each other between other each broach of comb-type structure body D, and have the identical structure of broach of the above-mentioned leftmost side.The comb of comb-type structure body C and comb-type structure body D is being parallel to each other, and the broach relative spacing is arranged.
When adopting circuit defect testing apparatus inefficacy property analysis shown in Figure 2; At first remove the n+2 conductive layer of this circuit defect testing apparatus place wafer; Like this; Conductor wire 201 as the comb handle among the comb-type structure body C just together is removed, and each broach of comb-type structure body C is just independently of one another, is in the state of mutually insulated.With comb-type structure body D ground connection, make the comb handle of comb-type structure body D and the current potential of broach all remain on zero potential then.Adopt SEM to observe this test structure.Through adjusting suitable display image contrast, under normal circumstances, can so that the comb of comb-type structure body D and broach manifest high bright state, and each broach of comb-type structure body C all is in dark state, and is as shown in Figure 3.
As shown in Figure 4; Failpoint 403 appears in this circuit defect testing apparatus, in former each broach that belongs to comb-type structure body C, with failpoint 403 nearest be broach 401; And in each broach of comb-type structure body D, with failpoint 403 nearest be broach 402.The existence of failpoint 403; Can cause broach 402 and broach 401 conductings; Then the current potential of broach 401 is identical with comb-type structure body D, therefore also can be in high bright state, and other broach of comb-type structure body C and broach 401 mutually insulateds; And with comb-type structure body D also be mutually insulated, so other broach still keep dark state.The tester is after observing above-mentioned phenomenon, and the position that just can be easy to confirm failpoint just belongs to comb-type structure body C and becomes near the broach 401 that becomes clear former.
Visible from above narration, the invention provides a kind of circuit defect testing apparatus, comprise the first comb-type structure body and the second comb-type structure body; The said first comb-type structure body is made up of some first parallel short-range missile electric wire chains; The said second comb-type structure body is made up of with the some second short-range missile electric wire chains vertical and parallel with second conductor wire second conductor wire that is positioned at first conductive layer, and said second short-range missile electric wire chain distance first a short-range missile electric wire chain end far away directly links to each other with second conductor wire; The said first short-range missile electric wire chain and the second short-range missile electric wire chain are arranged at interval.
Wherein, The said first short-range missile electric wire chain is made up of the some first short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some first conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said first conductive through hole connect one first short-range missile electric wire respectively.
Wherein, The said second short-range missile electric wire chain is made up of the some second short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some second conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said second conductive through hole connect one second short-range missile electric wire respectively.
Preferably; This device also comprises first conductor wire that is positioned at the 3rd conductive layer; And some the 3rd conductive through holes that pass the insulating barrier between said first conductive layer and the 3rd conductive layer; One end of the 3rd conductive through hole connects said first conductor wire, and the other end of the 3rd conductive through hole connects distance second a short-range missile electric wire chain end far away of the said first short-range missile electric wire chain.
Circuit defect method of testing based on above-mentioned circuit defect testing apparatus comprises the steps:
With the said second comb-type structure body ground connection, adopt this circuit defect testing apparatus of sem observation, and adjust suitable display image contrast;
When the high bright state of the second comb-type structure body whole show, and the first comb-type structure body integral body is judged no circuit defect when being in dark state; When the high bright state of the second comb-type structure body whole show; And at least one first short-range missile electric wire chain of the first comb-type structure body presents high bright state; And when at least one first short-range missile electric wire chain of the first attribute structure body presents dark state, judge that then there is the circuit defect failpoint in the position between said first short-range missile electric wire chain that presents high bright state and the second short-range missile electric wire chain adjacent with this first short-range missile electric wire chain.
In above embodiment, the material of each layer conductor wire can be copper, aluminium or polysilicon.The material of conductive through hole is copper or tungsten.And the material of the insulating medium layer between the adjacent conductive layer is a silica.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (8)
1. a circuit defect testing apparatus comprises the first comb-type structure body and the second comb-type structure body; The said first comb-type structure body comprises some first parallel short-range missile electric wire chains; The said second comb-type structure body is made up of second conductor wire and parallel some second short-range missile electric wire chains, and said second short-range missile electric wire chain distance first a short-range missile electric wire chain end far away directly links to each other with second conductor wire; The said first short-range missile electric wire chain and the second short-range missile electric wire chain are arranged at interval.
2. circuit defect testing apparatus according to claim 1 is characterized in that, said second conductor wire is positioned at first conductive layer;
The said first short-range missile electric wire chain is made up of the some first short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some first conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said first conductive through hole connect one first short-range missile electric wire respectively.
3. circuit defect testing apparatus according to claim 1 is characterized in that, said second conductor wire is positioned at first conductive layer;
The said second short-range missile electric wire chain is made up of the some second short-range missile electric wires that are distributed in first conductive layer and second conductive layer and some second conductive through holes of passing the insulating barrier between said first conductive layer and second conductive layer, and the two ends of said second conductive through hole connect one second short-range missile electric wire respectively.
4. according to claim 2 or 3 described circuit defect testing apparatuss; It is characterized in that; This device also comprises first conductor wire that is positioned at the 3rd conductive layer; And some the 3rd conductive through holes that pass the insulating barrier between said first conductive layer and the 3rd conductive layer, an end of the 3rd conductive through hole connects said first conductor wire, and the other end of the 3rd conductive through hole connects distance second a short-range missile electric wire chain end far away of the said first short-range missile electric wire chain.
5. circuit defect testing apparatus according to claim 1 is characterized in that, the material of said conductor wire is copper, aluminium or polysilicon.
6. according to claim 2 or 3 described circuit defect testing apparatuss, it is characterized in that the material of said conductive through hole is copper or tungsten.
7. according to claim 2 or 3 described circuit defect testing apparatuss, it is characterized in that the material of said insulating medium layer is a silica.
8. a circuit defect method of testing comprises the steps:
With the said second comb-type structure body ground connection, adopt this circuit defect testing apparatus of sem observation, and adjust suitable display image contrast;
When the high bright state of the second comb-type structure body whole show, and the first comb-type structure body integral body is judged no circuit defect when being in dark state; When the high bright state of the second comb-type structure body whole show; And at least one first short-range missile electric wire chain of the first comb-type structure body presents high bright state; And when at least one first short-range missile electric wire chain of the first attribute structure body presents dark state, judge that then there is the circuit defect failpoint in the position between said first short-range missile electric wire chain that presents high bright state and the second short-range missile electric wire chain adjacent with this first short-range missile electric wire chain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102925507A CN102412232A (en) | 2010-09-17 | 2010-09-17 | Apparatus and method for short circuit defect testing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102925507A CN102412232A (en) | 2010-09-17 | 2010-09-17 | Apparatus and method for short circuit defect testing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102412232A true CN102412232A (en) | 2012-04-11 |
Family
ID=45914231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102925507A Pending CN102412232A (en) | 2010-09-17 | 2010-09-17 | Apparatus and method for short circuit defect testing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102412232A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247550A (en) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | Test module and method for monitoring processing procedure stability |
| CN104316813A (en) * | 2014-08-11 | 2015-01-28 | 上海华虹宏力半导体制造有限公司 | Voltage contrast method for determining abnormal short-circuit position |
| CN107240558A (en) * | 2016-03-29 | 2017-10-10 | 北大方正集团有限公司 | A kind of technology controlling and process monitoring PCM device and monitoring method |
| CN107346751A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Test structure and forming method thereof and method of testing |
| CN109148315A (en) * | 2018-08-27 | 2019-01-04 | 苏州芯联成软件有限公司 | The discriminating conduct of two through-hole between metallic layers connection in a kind of chip |
| CN109884712A (en) * | 2019-03-20 | 2019-06-14 | 深圳精智达技术股份有限公司 | Contact-type detection |
| CN110148570A (en) * | 2019-05-17 | 2019-08-20 | 业成科技（成都）有限公司 | The production method of display panel and display panel |
| CN110277371A (en) * | 2019-07-05 | 2019-09-24 | 武汉新芯集成电路制造有限公司 | A kind of test structure and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1720457A (en) * | 2002-11-30 | 2006-01-11 | Oht株式会社 | Circuit pattern inspection instrument and pattern inspecting method |
| JP2010098111A (en) * | 2008-10-16 | 2010-04-30 | Fujitsu Microelectronics Ltd | Method for locating defective position between wires |
-
2010
- 2010-09-17 CN CN2010102925507A patent/CN102412232A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1720457A (en) * | 2002-11-30 | 2006-01-11 | Oht株式会社 | Circuit pattern inspection instrument and pattern inspecting method |
| JP2010098111A (en) * | 2008-10-16 | 2010-04-30 | Fujitsu Microelectronics Ltd | Method for locating defective position between wires |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140333325A1 (en) * | 2013-05-07 | 2014-11-13 | Shanghai Huali Microelectronics Corporation | Test module device and a test method for monitoring the stability of processes |
| US9275919B2 (en) * | 2013-05-07 | 2016-03-01 | Shanghai Huali Microelectronics Corporation | Test module device and a test method for monitoring the stability of processes |
| CN103247550B (en) * | 2013-05-07 | 2016-04-13 | 上海华力微电子有限公司 | The test module of monitoring program stability and method |
| CN103247550A (en) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | Test module and method for monitoring processing procedure stability |
| CN104316813A (en) * | 2014-08-11 | 2015-01-28 | 上海华虹宏力半导体制造有限公司 | Voltage contrast method for determining abnormal short-circuit position |
| CN107240558B (en) * | 2016-03-29 | 2019-10-15 | 北大方正集团有限公司 | A kind of technology controlling and process monitoring PCM device and monitoring method |
| CN107240558A (en) * | 2016-03-29 | 2017-10-10 | 北大方正集团有限公司 | A kind of technology controlling and process monitoring PCM device and monitoring method |
| CN107346751B (en) * | 2016-05-05 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Test structure, forming method thereof and test method |
| CN107346751A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Test structure and forming method thereof and method of testing |
| CN109148315A (en) * | 2018-08-27 | 2019-01-04 | 苏州芯联成软件有限公司 | The discriminating conduct of two through-hole between metallic layers connection in a kind of chip |
| CN109148315B (en) * | 2018-08-27 | 2020-11-10 | 苏州芯联成软件有限公司 | Method for distinguishing through hole connection between two metal layers in chip |
| CN109884712A (en) * | 2019-03-20 | 2019-06-14 | 深圳精智达技术股份有限公司 | Contact-type detection |
| CN109884712B (en) * | 2019-03-20 | 2021-09-28 | 深圳精智达技术股份有限公司 | Contact type detection device |
| CN110148570A (en) * | 2019-05-17 | 2019-08-20 | 业成科技（成都）有限公司 | The production method of display panel and display panel |
| CN110148570B (en) * | 2019-05-17 | 2020-12-22 | 业成科技（成都）有限公司 | Display panel and manufacturing method thereof |
| CN110277371A (en) * | 2019-07-05 | 2019-09-24 | 武汉新芯集成电路制造有限公司 | A kind of test structure and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102412232A (en) | Apparatus and method for short circuit defect testing | |
| CN102386167B (en) | Structure of semiconductor device | |
| CN110783214B (en) | Wafer level test method and test structure thereof | |
| US7733099B2 (en) | Monitoring pattern for detecting a defect in a semiconductor device and method for detecting a defect | |
| US7170189B2 (en) | Semiconductor wafer and testing method therefor | |
| EP2324499B1 (en) | Circuit for the parallel supplying of power during testing of a plurality of electronic devices integrated on a semiconductor wafer | |
| TW200712516A (en) | Semiconductor device and method for inspecting the semiconductor | |
| CN105118798A (en) | Electromigration test structure and test method | |
| US9829507B2 (en) | Method of manufacturing semiconductor device, and probe card | |
| CN109698138B (en) | Semiconductor failure positioning test unit and failure positioning method thereof | |
| JP2010182932A (en) | Semiconductor device, and method for analyzing defect of semiconductor device | |
| KR102195561B1 (en) | Electrical connection device | |
| DE102007037377B4 (en) | Method for the detection of interruptions characterizable defects in interconnect networks | |
| JP2010003832A (en) | Semiconductor device and method of evaluating the same | |
| JP2013250145A (en) | Probe card | |
| CN102194796B (en) | Wafer detection structure, manufacturing method thereof and wafer detection method | |
| CN105845590A (en) | Method for detecting defects of metal | |
| JP4903469B2 (en) | Defect detection method | |
| JP4727943B2 (en) | Inspection circuit, inspection method using the same, and semiconductor device including the inspection circuit | |
| CN111524874A (en) | Test structure and evaluation method for semiconductor photoetching registration | |
| JP2008311439A (en) | Semiconductor device, and connection inspection method of conductive wiring of same | |
| JP2010192521A (en) | Method of manufacturing semiconductor device, and teg element | |
| JP2011071186A (en) | Semiconductor device and evaluation analyzing method of the same | |
| CN207009435U (en) | Wafer sort structure | |
| KR100769147B1 (en) | Method of detacting semiconductor device faults by using afm |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120411 |