CN102405514B - 光纤激光基材处理 - Google Patents

光纤激光基材处理 Download PDF

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Publication number
CN102405514B
CN102405514B CN201080017238.5A CN201080017238A CN102405514B CN 102405514 B CN102405514 B CN 102405514B CN 201080017238 A CN201080017238 A CN 201080017238A CN 102405514 B CN102405514 B CN 102405514B
Authority
CN
China
Prior art keywords
substrate
light
semiconductor substrate
fiber
light pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080017238.5A
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English (en)
Chinese (zh)
Other versions
CN102405514A (zh
Inventor
斯蒂芬·莫法特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102405514A publication Critical patent/CN102405514A/zh
Application granted granted Critical
Publication of CN102405514B publication Critical patent/CN102405514B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Radiation Pyrometers (AREA)
CN201080017238.5A 2009-04-20 2010-04-19 光纤激光基材处理 Expired - Fee Related CN102405514B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17101109P 2009-04-20 2009-04-20
US61/171,011 2009-04-20
PCT/US2010/031632 WO2010123829A2 (en) 2009-04-20 2010-04-19 Fiber laser substrate processing

Publications (2)

Publication Number Publication Date
CN102405514A CN102405514A (zh) 2012-04-04
CN102405514B true CN102405514B (zh) 2014-07-16

Family

ID=42981299

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080017238.5A Expired - Fee Related CN102405514B (zh) 2009-04-20 2010-04-19 光纤激光基材处理

Country Status (7)

Country Link
US (1) US8372667B2 (enExample)
JP (1) JP5597251B2 (enExample)
KR (1) KR101654274B1 (enExample)
CN (1) CN102405514B (enExample)
SG (1) SG174859A1 (enExample)
TW (1) TWI435389B (enExample)
WO (1) WO2010123829A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
WO2013148066A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Laser noise elimination in transmission thermometry
DE102012221080A1 (de) * 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置
US9343307B2 (en) 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
US10053777B2 (en) 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US9698041B2 (en) * 2014-06-09 2017-07-04 Applied Materials, Inc. Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods
CN106471609B (zh) * 2014-07-02 2019-10-15 应用材料公司 用于使用嵌入光纤光学器件及环氧树脂光学散射器的基板温度控制的装置、系统与方法
CN106463404B (zh) * 2014-07-02 2019-11-19 应用材料公司 有沟槽引导式光纤加热的温度控制设备、基板温度控制系统、电子器件处理系统及处理方法
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
TWI647760B (zh) * 2016-03-22 2019-01-11 日商東京威力科創股份有限公司 電漿處理系統中之溫度控制用系統及方法
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
KR102312866B1 (ko) * 2019-12-13 2021-10-14 세메스 주식회사 박막 식각 장치
JP7505332B2 (ja) * 2020-08-28 2024-06-25 中国電力株式会社 気中開閉器の浸水判定装置及び浸水判定方法
US20220319818A1 (en) * 2021-03-31 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Laser array system for improved local cd uniformity

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060078675A1 (en) * 2002-05-08 2006-04-13 Devendra Kumar Plasma-assisted enhanced coating
US20070212859A1 (en) * 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
US7519252B2 (en) * 2006-03-27 2009-04-14 Laserfront Technologies, Inc. Laser annealing apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04142030A (ja) * 1990-09-12 1992-05-15 Ricoh Co Ltd 半導体膜の製造方法
JP4401540B2 (ja) * 2000-06-30 2010-01-20 浜松ホトニクス株式会社 レーザー装置及びこれを用いた光信号増幅装置
JP2002359208A (ja) * 2001-06-01 2002-12-13 Matsushita Electric Ind Co Ltd レーザアニール装置
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004064066A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
KR20030095313A (ko) 2002-06-07 2003-12-18 후지 샤신 필름 가부시기가이샤 레이저 어닐링장치 및 레이저 박막형성장치
FI20045308A7 (fi) * 2004-08-26 2006-02-27 Corelase Oy Optinen kuituvahvistin, jossa on vahvistuksen muotoerottelu
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4854244B2 (ja) 2005-09-20 2012-01-18 東芝モバイルディスプレイ株式会社 レーザアニール方法およびその装置
JP5354969B2 (ja) * 2008-06-17 2013-11-27 ミヤチテクノス株式会社 ファイバレーザ加工方法及びファイバレーザ加工装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060078675A1 (en) * 2002-05-08 2006-04-13 Devendra Kumar Plasma-assisted enhanced coating
US20070212859A1 (en) * 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
US7519252B2 (en) * 2006-03-27 2009-04-14 Laserfront Technologies, Inc. Laser annealing apparatus

Also Published As

Publication number Publication date
TW201106428A (en) 2011-02-16
KR101654274B1 (ko) 2016-09-06
US20100267173A1 (en) 2010-10-21
WO2010123829A2 (en) 2010-10-28
KR20110138415A (ko) 2011-12-27
JP5597251B2 (ja) 2014-10-01
SG174859A1 (en) 2011-11-28
US8372667B2 (en) 2013-02-12
CN102405514A (zh) 2012-04-04
WO2010123829A3 (en) 2011-01-13
JP2012524422A (ja) 2012-10-11
TWI435389B (zh) 2014-04-21

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140716