KR101654274B1 - 광섬유 기판 처리 - Google Patents

광섬유 기판 처리 Download PDF

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Publication number
KR101654274B1
KR101654274B1 KR1020117027743A KR20117027743A KR101654274B1 KR 101654274 B1 KR101654274 B1 KR 101654274B1 KR 1020117027743 A KR1020117027743 A KR 1020117027743A KR 20117027743 A KR20117027743 A KR 20117027743A KR 101654274 B1 KR101654274 B1 KR 101654274B1
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KR
South Korea
Prior art keywords
substrate
semiconductor substrate
optical
processing system
light
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KR1020117027743A
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English (en)
Korean (ko)
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KR20110138415A (ko
Inventor
스티븐 모파트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20110138415A publication Critical patent/KR20110138415A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Radiation Pyrometers (AREA)
KR1020117027743A 2009-04-20 2010-04-19 광섬유 기판 처리 Active KR101654274B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17101109P 2009-04-20 2009-04-20
US61/171,011 2009-04-20

Publications (2)

Publication Number Publication Date
KR20110138415A KR20110138415A (ko) 2011-12-27
KR101654274B1 true KR101654274B1 (ko) 2016-09-06

Family

ID=42981299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117027743A Active KR101654274B1 (ko) 2009-04-20 2010-04-19 광섬유 기판 처리

Country Status (7)

Country Link
US (1) US8372667B2 (enExample)
JP (1) JP5597251B2 (enExample)
KR (1) KR101654274B1 (enExample)
CN (1) CN102405514B (enExample)
SG (1) SG174859A1 (enExample)
TW (1) TWI435389B (enExample)
WO (1) WO2010123829A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Screenホールディングス 熱処理装置
WO2013148066A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Laser noise elimination in transmission thermometry
DE102012221080A1 (de) * 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置
US9343307B2 (en) 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
US10053777B2 (en) 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US9698041B2 (en) * 2014-06-09 2017-07-04 Applied Materials, Inc. Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods
CN106471609B (zh) * 2014-07-02 2019-10-15 应用材料公司 用于使用嵌入光纤光学器件及环氧树脂光学散射器的基板温度控制的装置、系统与方法
CN106463404B (zh) * 2014-07-02 2019-11-19 应用材料公司 有沟槽引导式光纤加热的温度控制设备、基板温度控制系统、电子器件处理系统及处理方法
EP3164885B1 (en) * 2014-07-03 2021-08-25 IPG Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
TWI647760B (zh) * 2016-03-22 2019-01-11 日商東京威力科創股份有限公司 電漿處理系統中之溫度控制用系統及方法
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
KR102312866B1 (ko) * 2019-12-13 2021-10-14 세메스 주식회사 박막 식각 장치
JP7505332B2 (ja) * 2020-08-28 2024-06-25 中国電力株式会社 気中開閉器の浸水判定装置及び浸水判定方法
US20220319818A1 (en) * 2021-03-31 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Laser array system for improved local cd uniformity

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212859A1 (en) 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate

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Publication number Priority date Publication date Assignee Title
JPH04142030A (ja) * 1990-09-12 1992-05-15 Ricoh Co Ltd 半導体膜の製造方法
JP4401540B2 (ja) * 2000-06-30 2010-01-20 浜松ホトニクス株式会社 レーザー装置及びこれを用いた光信号増幅装置
JP2002359208A (ja) * 2001-06-01 2002-12-13 Matsushita Electric Ind Co Ltd レーザアニール装置
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
JP2004064066A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
KR20030095313A (ko) 2002-06-07 2003-12-18 후지 샤신 필름 가부시기가이샤 레이저 어닐링장치 및 레이저 박막형성장치
FI20045308A7 (fi) * 2004-08-26 2006-02-27 Corelase Oy Optinen kuituvahvistin, jossa on vahvistuksen muotoerottelu
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4854244B2 (ja) 2005-09-20 2012-01-18 東芝モバイルディスプレイ株式会社 レーザアニール方法およびその装置
JP4698460B2 (ja) 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 レーザアニーリング装置
JP5354969B2 (ja) * 2008-06-17 2013-11-27 ミヤチテクノス株式会社 ファイバレーザ加工方法及びファイバレーザ加工装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212859A1 (en) 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate

Also Published As

Publication number Publication date
TW201106428A (en) 2011-02-16
CN102405514B (zh) 2014-07-16
US20100267173A1 (en) 2010-10-21
WO2010123829A2 (en) 2010-10-28
KR20110138415A (ko) 2011-12-27
JP5597251B2 (ja) 2014-10-01
SG174859A1 (en) 2011-11-28
US8372667B2 (en) 2013-02-12
CN102405514A (zh) 2012-04-04
WO2010123829A3 (en) 2011-01-13
JP2012524422A (ja) 2012-10-11
TWI435389B (zh) 2014-04-21

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