SG174859A1 - Fiber laser substrate processing - Google Patents
Fiber laser substrate processing Download PDFInfo
- Publication number
- SG174859A1 SG174859A1 SG2011064839A SG2011064839A SG174859A1 SG 174859 A1 SG174859 A1 SG 174859A1 SG 2011064839 A SG2011064839 A SG 2011064839A SG 2011064839 A SG2011064839 A SG 2011064839A SG 174859 A1 SG174859 A1 SG 174859A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- processing system
- substrate processing
- semiconductor substrate
- optical
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 209
- 238000012545 processing Methods 0.000 title claims abstract description 76
- 239000000835 fiber Substances 0.000 title claims description 77
- 238000000034 method Methods 0.000 claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000012544 monitoring process Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000004616 Pyrometry Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 12
- 230000007423 decrease Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000004590 computer program Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000013305 flexible fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005275 molecular electronic transition Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17101109P | 2009-04-20 | 2009-04-20 | |
| PCT/US2010/031632 WO2010123829A2 (en) | 2009-04-20 | 2010-04-19 | Fiber laser substrate processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG174859A1 true SG174859A1 (en) | 2011-11-28 |
Family
ID=42981299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011064839A SG174859A1 (en) | 2009-04-20 | 2010-04-19 | Fiber laser substrate processing |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8372667B2 (enExample) |
| JP (1) | JP5597251B2 (enExample) |
| KR (1) | KR101654274B1 (enExample) |
| CN (1) | CN102405514B (enExample) |
| SG (1) | SG174859A1 (enExample) |
| TW (1) | TWI435389B (enExample) |
| WO (1) | WO2010123829A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5964626B2 (ja) * | 2012-03-22 | 2016-08-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| WO2013148066A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Laser noise elimination in transmission thermometry |
| DE102012221080A1 (de) * | 2012-11-19 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements |
| US9196514B2 (en) * | 2013-09-06 | 2015-11-24 | Applied Materials, Inc. | Electrostatic chuck with variable pixilated heating |
| JP2015115401A (ja) * | 2013-12-10 | 2015-06-22 | 三菱電機株式会社 | レーザアニール方法およびレーザアニール装置 |
| US9343307B2 (en) | 2013-12-24 | 2016-05-17 | Ultratech, Inc. | Laser spike annealing using fiber lasers |
| US10053777B2 (en) | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
| US9698041B2 (en) * | 2014-06-09 | 2017-07-04 | Applied Materials, Inc. | Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods |
| CN106471609B (zh) * | 2014-07-02 | 2019-10-15 | 应用材料公司 | 用于使用嵌入光纤光学器件及环氧树脂光学散射器的基板温度控制的装置、系统与方法 |
| CN106463404B (zh) * | 2014-07-02 | 2019-11-19 | 应用材料公司 | 有沟槽引导式光纤加热的温度控制设备、基板温度控制系统、电子器件处理系统及处理方法 |
| EP3164885B1 (en) * | 2014-07-03 | 2021-08-25 | IPG Photonics Corporation | Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser |
| TWI647760B (zh) * | 2016-03-22 | 2019-01-11 | 日商東京威力科創股份有限公司 | 電漿處理系統中之溫度控制用系統及方法 |
| US10973088B2 (en) | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
| KR102312866B1 (ko) * | 2019-12-13 | 2021-10-14 | 세메스 주식회사 | 박막 식각 장치 |
| JP7505332B2 (ja) * | 2020-08-28 | 2024-06-25 | 中国電力株式会社 | 気中開閉器の浸水判定装置及び浸水判定方法 |
| US20220319818A1 (en) * | 2021-03-31 | 2022-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Laser array system for improved local cd uniformity |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04142030A (ja) * | 1990-09-12 | 1992-05-15 | Ricoh Co Ltd | 半導体膜の製造方法 |
| JP4401540B2 (ja) * | 2000-06-30 | 2010-01-20 | 浜松ホトニクス株式会社 | レーザー装置及びこれを用いた光信号増幅装置 |
| JP2002359208A (ja) * | 2001-06-01 | 2002-12-13 | Matsushita Electric Ind Co Ltd | レーザアニール装置 |
| US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
| US7498066B2 (en) * | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
| JP2004064066A (ja) * | 2002-06-07 | 2004-02-26 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| KR20030095313A (ko) | 2002-06-07 | 2003-12-18 | 후지 샤신 필름 가부시기가이샤 | 레이저 어닐링장치 및 레이저 박막형성장치 |
| FI20045308A7 (fi) * | 2004-08-26 | 2006-02-27 | Corelase Oy | Optinen kuituvahvistin, jossa on vahvistuksen muotoerottelu |
| US7700463B2 (en) * | 2005-09-02 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4854244B2 (ja) | 2005-09-20 | 2012-01-18 | 東芝モバイルディスプレイ株式会社 | レーザアニール方法およびその装置 |
| US20070221640A1 (en) * | 2006-03-08 | 2007-09-27 | Dean Jennings | Apparatus for thermal processing structures formed on a substrate |
| JP4698460B2 (ja) | 2006-03-27 | 2011-06-08 | オムロンレーザーフロント株式会社 | レーザアニーリング装置 |
| JP5354969B2 (ja) * | 2008-06-17 | 2013-11-27 | ミヤチテクノス株式会社 | ファイバレーザ加工方法及びファイバレーザ加工装置 |
-
2010
- 2010-04-15 US US12/761,306 patent/US8372667B2/en active Active
- 2010-04-19 SG SG2011064839A patent/SG174859A1/en unknown
- 2010-04-19 JP JP2012507292A patent/JP5597251B2/ja active Active
- 2010-04-19 KR KR1020117027743A patent/KR101654274B1/ko active Active
- 2010-04-19 WO PCT/US2010/031632 patent/WO2010123829A2/en not_active Ceased
- 2010-04-19 CN CN201080017238.5A patent/CN102405514B/zh not_active Expired - Fee Related
- 2010-04-20 TW TW099112394A patent/TWI435389B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201106428A (en) | 2011-02-16 |
| CN102405514B (zh) | 2014-07-16 |
| KR101654274B1 (ko) | 2016-09-06 |
| US20100267173A1 (en) | 2010-10-21 |
| WO2010123829A2 (en) | 2010-10-28 |
| KR20110138415A (ko) | 2011-12-27 |
| JP5597251B2 (ja) | 2014-10-01 |
| US8372667B2 (en) | 2013-02-12 |
| CN102405514A (zh) | 2012-04-04 |
| WO2010123829A3 (en) | 2011-01-13 |
| JP2012524422A (ja) | 2012-10-11 |
| TWI435389B (zh) | 2014-04-21 |
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