TWI435389B - 光纖雷射基材處理系統與方法 - Google Patents

光纖雷射基材處理系統與方法 Download PDF

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Publication number
TWI435389B
TWI435389B TW099112394A TW99112394A TWI435389B TW I435389 B TWI435389 B TW I435389B TW 099112394 A TW099112394 A TW 099112394A TW 99112394 A TW99112394 A TW 99112394A TW I435389 B TWI435389 B TW I435389B
Authority
TW
Taiwan
Prior art keywords
substrate
fiber
light
optical
semiconductor substrate
Prior art date
Application number
TW099112394A
Other languages
English (en)
Chinese (zh)
Other versions
TW201106428A (en
Inventor
莫非特史帝夫
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201106428A publication Critical patent/TW201106428A/zh
Application granted granted Critical
Publication of TWI435389B publication Critical patent/TWI435389B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
TW099112394A 2009-04-20 2010-04-20 光纖雷射基材處理系統與方法 TWI435389B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17101109P 2009-04-20 2009-04-20

Publications (2)

Publication Number Publication Date
TW201106428A TW201106428A (en) 2011-02-16
TWI435389B true TWI435389B (zh) 2014-04-21

Family

ID=42981299

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099112394A TWI435389B (zh) 2009-04-20 2010-04-20 光纖雷射基材處理系統與方法

Country Status (7)

Country Link
US (1) US8372667B2 (enExample)
JP (1) JP5597251B2 (enExample)
KR (1) KR101654274B1 (enExample)
CN (1) CN102405514B (enExample)
SG (1) SG174859A1 (enExample)
TW (1) TWI435389B (enExample)
WO (1) WO2010123829A2 (enExample)

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JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Screenホールディングス 熱処理装置
WO2013148066A1 (en) 2012-03-30 2013-10-03 Applied Materials, Inc. Laser noise elimination in transmission thermometry
DE102012221080A1 (de) * 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置
US9343307B2 (en) 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
US10053777B2 (en) 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US9698041B2 (en) * 2014-06-09 2017-07-04 Applied Materials, Inc. Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods
WO2016003633A1 (en) * 2014-07-02 2016-01-07 Applied Materials, Inc Apparatus, systems, and methods for temperature control of substrates using embedded fiber optics and epoxy optical diffusers
KR102163083B1 (ko) * 2014-07-02 2020-10-07 어플라이드 머티어리얼스, 인코포레이티드 홈 라우팅 광섬유 가열을 포함하는 온도 제어 장치, 기판 온도 제어 시스템들, 전자 디바이스 처리 시스템들 및 처리 방법들
WO2016004175A1 (en) * 2014-07-03 2016-01-07 Ipg Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
CN109154085B (zh) * 2016-03-22 2021-05-18 东京毅力科创株式会社 用于等离子体处理系统中的温度控制的系统和方法
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
KR102312866B1 (ko) * 2019-12-13 2021-10-14 세메스 주식회사 박막 식각 장치
JP7505332B2 (ja) * 2020-08-28 2024-06-25 中国電力株式会社 気中開閉器の浸水判定装置及び浸水判定方法
US12531217B2 (en) * 2021-03-31 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Laser array system for improved local CD uniformity

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04142030A (ja) * 1990-09-12 1992-05-15 Ricoh Co Ltd 半導体膜の製造方法
JP4401540B2 (ja) * 2000-06-30 2010-01-20 浜松ホトニクス株式会社 レーザー装置及びこれを用いた光信号増幅装置
JP2002359208A (ja) * 2001-06-01 2002-12-13 Matsushita Electric Ind Co Ltd レーザアニール装置
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
KR20030095313A (ko) * 2002-06-07 2003-12-18 후지 샤신 필름 가부시기가이샤 레이저 어닐링장치 및 레이저 박막형성장치
JP2004064066A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
FI20045308A7 (fi) * 2004-08-26 2006-02-27 Corelase Oy Optinen kuituvahvistin, jossa on vahvistuksen muotoerottelu
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4854244B2 (ja) 2005-09-20 2012-01-18 東芝モバイルディスプレイ株式会社 レーザアニール方法およびその装置
US20070212859A1 (en) * 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
JP4698460B2 (ja) * 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 レーザアニーリング装置
JP5354969B2 (ja) * 2008-06-17 2013-11-27 ミヤチテクノス株式会社 ファイバレーザ加工方法及びファイバレーザ加工装置

Also Published As

Publication number Publication date
US20100267173A1 (en) 2010-10-21
JP2012524422A (ja) 2012-10-11
WO2010123829A3 (en) 2011-01-13
US8372667B2 (en) 2013-02-12
TW201106428A (en) 2011-02-16
KR20110138415A (ko) 2011-12-27
JP5597251B2 (ja) 2014-10-01
KR101654274B1 (ko) 2016-09-06
SG174859A1 (en) 2011-11-28
WO2010123829A2 (en) 2010-10-28
CN102405514A (zh) 2012-04-04
CN102405514B (zh) 2014-07-16

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