CN102403895B - Self-excitation Sepic converter based on MOSFET - Google Patents
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Abstract
The invention discloses a self-excitation Sepic (Single-ended Primary Industry Converter) converter based on MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor), comprising an Sepic converter major loop consisting of an input capacitor C1, an inductor L1, an N type MOSFET M1, a capacitor C, another inductor L2, a diode D and another capacitor C0; and the self-excitation Sepic converter further comprises an auxiliary power supply U1 and adopts a single MOSFET basic self-excitation unit circuit composed of the N type MOSFET M1, the diode D1, the diode D2, a resistor R1, another resistor R2, the capacitor C1, a stagnant ring comparator U3 and a driving circuit U2. The invention provides the self-excitation Sepic converter based on MOSFET with relatively high efficiency and wider application power scope.
Description
Technical field
The present invention relates to autonomous DC-DC (DC-DC) converter, be applied to switch voltage-stabilizing or stabilized current power supply, high-brightness LED drive circuit etc., especially a kind of self-excitation Sepic converter.
Background technology
Compare with separated exciting DC-DC converter with linear (voltage stabilizing or current stabilization) adjuster, auto-excitation type DC-DC converter has the remarkable advantage that cost performance is high.What Fig. 1 provided is a kind of self-excitation Sepic converter based on BJT (bipolar transistor), comprise by input capacitance Ci, inductance L 1, diode D1, NPN type BJT Q1, capacitor C, inductance L 2, the Sepic converter major loop that diode D and output capacitance Co form, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the negative terminal of the negative terminal of direct voltage source Vi and VD Vo, the emitter of NPN type BJT Q1 is connected, the anode of direct voltage source Vi is connected with one end of inductance L 1, the other end of inductance L 1 is connected with the anode of diode D1, the negative electrode of diode D1 is connected with the collector electrode of NPN type BJT Q1 and one end of capacitor C, the other end of capacitor C is connected with the anode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the negative terminal of direct voltage source Vi, the negative electrode of diode D is connected with the anode of output voltage V o.
Self-excitation Sepic converter based on BJT shown in Fig. 1 also comprises NPN type BJT Q2, the collector and emitter of NPN type BJT Q2 is connected with emitter with the base stage of NPN type BJT Q1 respectively, the base stage of NPN type BJT Q1 is also connected to the anode of direct voltage source Vi by resistance R 1, resistance R 3 and capacitor C 1 form parallel branch, one end of described parallel branch is connected with the anode of diode D1, the other end of described parallel branch is connected with the base stage of NPN type BJT Q2 and one end of resistance R 2, and the other end of resistance R 2 is connected with the emitter of NPN type BJT Q2.Self-excitation Sepic converter based on BJT shown in Fig. 1 also comprises Voltage Feedback branch road, the negative electrode of voltage-stabiliser tube Z1 is connected with the anode of VD Vo, the anode of voltage-stabiliser tube Z1 is connected with one end of resistance R 5 and the base stage of NPN type BJT Q3, the collector electrode of NPN type BJTQ3 is connected with the base stage of NPN type BJT Q1 by resistance R 4, and the emitter of NPN type BJTQ3 and the other end of resistance R 5 are connected to the negative terminal of direct voltage source Vi.The weak point of this circuit is: main switch Q1 adopts BJT, because the operating characteristic of BJT causes circuit efficiency not high enough, is relatively applicable to the occasion of small-power (several watts of levels are following).
Summary of the invention
Not high enough and be only only applicable to low power deficiency for overcoming self-excitation Sepic converter efficiency based on BJT, the invention provides that a kind of efficiency is higher, the self-excitation Sepic converter based on MOSFET (mos field effect transistor) of suitable power wider range.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of self-excitation Sepic converter based on MOSFET, comprise by input capacitance Ci, inductance L 1, N-type MOSFET M1, capacitor C, inductance L 2, the Sepic converter major loop that diode D and capacitor C o form, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with one end of inductance L 1, the other end of inductance L 1 is connected with the drain electrode of N-type MOSFET M1 and one end of capacitor C, the source electrode of N-type MOSFET M1 is connected with one end of resistance R 3, the other end of resistance R 3 is connected with the negative terminal of direct voltage source Vi and the negative terminal of VD Vo, the other end of capacitor C is connected with the anode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the negative terminal of direct voltage source Vi, the negative electrode of diode D is connected with the anode of output voltage V o,
The described self-excitation Sepic converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3; Accessory power supply U1 is for the DC power supply voltage that provides drive circuit U2 and hysteresis comparator U3 to work required, and DC input voitage Vi is boosted or the conversion process of step-down; The input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, and drive circuit U2 provides driving for turning on and off of N-type MOSFET M1; The input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1 and one end of resistance R 2, the other end of capacitor C 1 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the drain electrode of N-type MOSFET M1.
The described self-excitation Sepic converter based on MOSFET also comprises overcurrent protection branch road; described overcurrent protection branch road comprises resistance R 5, capacitor C 2 and NPN type BJT Q1; one end of resistance R 5 is connected with the source electrode of N-type MOSFET M1; the other end of resistance R 5 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q1; the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q1 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q1 is connected with the input of hysteresis comparator U3.
As preferred a kind of scheme: the described self-excitation Sepic converter based on MOSFET also comprises Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 6, capacitor C 3, resistance R 7, NPN type BJT Q2 and resistance R 4, resistance R 6 and capacitor C 3 form parallel branch, one end of described parallel branch is connected with the anode of VD Vo, the other end of described parallel branch is connected with one end of resistance R 7 and the base stage of NPN type BJT Q2, the emitter of NPN type BJT Q2 is connected with the other end of resistance R 7 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the input of hysteresis comparator U3 by resistance R 4.
As preferred another kind of scheme: the described self-excitation Sepic converter based on MOSFET also comprises current feedback branch road, described current feedback branch road comprises detection resistance R 8, voltage amplifier U4, resistance R 6, capacitor C 3, resistance R 7, NPN type BJT Q2 and resistance R 4, detect resistance R 8 and form series arm with load Ro, described series arm is in parallel with output capacitance Co, one end of detecting resistance R 8 is connected with the negative terminal of direct voltage source Vi, the input that detects the other end of resistance R 8 and one end of load Ro and voltage amplifier U4 is connected, resistance R 6 and capacitor C 3 form parallel branch, one end of described parallel branch is connected with the output of voltage amplifier U4, the other end of described parallel branch is connected with one end of resistance R 7 and the base stage of NPN type BJT Q2, the emitter of NPN type BJT Q2 is connected with the other end of resistance R 7 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the input of hysteresis comparator U3 by resistance R 4.
Technical conceive of the present invention is: the basic self-excitation element circuit of single MOSFET is applied in Sepic converter, makes it to become new auto-excitation type DC-DC converter (as shown in Figure 2,3).The basic self-excitation element circuit of single MOSFET is comprised of N-type MOSFET M1, diode D1, diode D2, resistance R 1, resistance R 2, capacitor C 1, hysteresis comparator U3 and drive circuit U2.Its feature is as follows: M1 is the switching device in Sepic converter major loop, the gate pole of M1 is connected with the output of drive circuit U2, the drain electrode of M1 is connected with the negative electrode of diode D2 with the anode of diode D1, the negative electrode of D1 is connected with one end of resistance R 1, the anode of D2 is connected with one end of resistance R 2, the other end of resistance R 1 and resistance R 2 is all connected with the input of hysteresis comparator U3 and one end of capacitor C 1, the other end of capacitor C 1 is connected to the negative terminal of direct voltage source Vi, and the output of hysteresis comparator U3 is connected with the input of drive circuit U2.
For obtaining stable VD, between the output of Sepic converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase a Voltage Feedback branch road, can form (as Fig. 2) by NPN type BJT Q2, resistance R 4, resistance R 6, resistance R 7 and capacitor C 3 etc.For obtaining stable average anode current, between the output of Sepic converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase a current feedback branch road, can form (as Fig. 3) by NPN type BJT Q2, resistance R 4, resistance R 6, resistance R 7, resistance R 8, capacitor C 3 and voltage amplifier U4 etc.For preventing M1 overcurrent; between the output of Sepic converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase an overcurrent protection branch road, can form (as Fig. 2 and Fig. 3) by resistance R 3, resistance R 5, capacitor C 2, NPN type BJT Q1 etc.
Beneficial effect of the present invention is mainly manifested in: the self-excitation Sepic converter of the present invention's proposition based on MOSFET has the voltage transformation function of buck, circuit structure is simple, efficiency is high, is applicable to the application such as middle low power (more than tens of watts of levels) switch voltage-stabilizing or stabilized current power supply, high-brightness LED drive circuit.
Accompanying drawing explanation
Fig. 1 is the existing self-excitation Sepic converter circuit diagram based on BJT.
Fig. 2 is self-excitation Sepic converter embodiment 1 circuit diagram based on MOSFET.
Fig. 3 is self-excitation Sepic converter embodiment 2 circuit diagrams based on MOSFET.
Fig. 4 is the input-output voltage characteristic figure of hysteresis comparator U3 in self-excitation Sepic converter embodiment 1 based on MOSFET and embodiment 2.
Fig. 5 is self-excitation Sepic converter embodiment 1 based on the MOSFET ideal waveform figure under continuous current mode mode of operation.
Fig. 6 is self-excitation Sepic converter embodiment 2 based on the MOSFET ideal waveform figure under continuous current mode mode of operation.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment 1
With reference to Fig. 2, Fig. 4 and Fig. 5, a kind of self-excitation Sepic converter based on MOSFET, comprise by input capacitance Ci, inductance L 1, N-type MOSFET M1, capacitor C, inductance L 2, the Sepic converter major loop that diode D and capacitor C o form, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with one end of inductance L 1, the other end of inductance L 1 is connected with the drain electrode of N-type MOSFET M1 and one end of capacitor C, the source electrode of N-type MOSFET M1 is connected with one end of resistance R 3, the other end of resistance R 3 is connected with the negative terminal of direct voltage source Vi and the negative terminal of VD Vo, the other end of capacitor C is connected with the anode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the negative terminal of direct voltage source Vi, the negative electrode of diode D is connected with the anode of output voltage V o, the described self-excitation Sepic converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3, accessory power supply U1 is for providing drive circuit U2 and the hysteresis comparator U3 required various DC power supply voltages of working, and can boost or the conversion process of step-down to DC input voitage Vi according to actual needs, the input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, and drive circuit U2 is that turning on and off of N-type MOSFET M1 (being main switch) provides driving, the input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1 and one end of resistance R 2, the other end of capacitor C 1 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the drain electrode of N-type MOSFET M1.
Figure 2 shows that the self-excitation Sepic converter embodiment 1 based on MOSFET, adopted overcurrent protection branch road, described overcurrent protection branch road comprises resistance R 5, capacitor C 2 and NPN type BJT Q1, one end of resistance R 5 is connected with the source electrode of N-type MOSFET M1, the other end of resistance R 5 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q1, the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q1 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q1 is connected with the input of hysteresis comparator U3; Also adopted Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 6, capacitor C 3, resistance R 7, NPN type BJT Q2 and resistance R 4, resistance R 6 and capacitor C 3 form parallel branch, one end of described parallel branch is connected with the anode of VD Vo, the other end of described parallel branch is connected with one end of resistance R 7 and the base stage of NPN type BJT Q2, the emitter of NPN type BJT Q2 is connected with the other end of resistance R 7 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q2 is connected with the input of hysteresis comparator U3 by resistance R 4.
The ideal waveform figure of self-excitation Sepic converter embodiment 1 based on MOSFET shown in Fig. 5 under continuous current mode mode of operation.Its circuit working principle is specific as follows:
(1) in the circuit electrifying startup stage: after circuit powers on, accessory power supply U1 starts working, convert DC input voitage Vi to drive circuit U2 and the hysteresis comparator U3 required voltage of working.Subsequently, drive circuit U2 and hysteresis comparator U3 also start working.Just started is t=t0, the terminal voltage vc1 of capacitor C 1 is zero, because vc1 is less than the lower limit reference voltage Vref 1 of U3, U3 output vp low level, through U2 power amplification output vg1 low level, M1 turn-offs, and diode D conducting, forms loop by Vi, Ci, L1, C, L2, by Vi, Ci, L1, C, D, Co, Ro, form another loop, inductance L 1 positive charge, inductive current iL1 forward increases, inductance L 2 reverse chargings, inductive current iL2 oppositely increases, capacitor C charging, output capacitance Co charging, voltage vc, vo, vd1 rise.Meanwhile, C1 charges by D1 and R1, and voltage vc1 rises.The upper limit reference voltage Vref 2 that rises to U3 as vc1 is t=t1, and U3 output vp high level, through U2 power amplification output vg1 high level, M1 conducting.After M1 conducting, D cut-off, forms loop by Vi, Ci, L1, M1, R3, by C, M1, R3, L2, forms another loop, inductance L 1 and L2 positive charge, and inductive current iL1 and iL2 forward increase, and output voltage vo is maintained by output capacitance Co, and voltage vd1 equals zero.C1 discharges by D2 and R2 simultaneously, and voltage vc1 declines.The lower limit reference voltage Vref 1 that drops to U3 as vc1 is t=t2, U3 output vp low level, and through U2 power amplification output vg1 low level, M1 turn-offs again, and circuit enters next from flyback cycle.When M1 turn-offs, D conducting, inductance L 2 is in discharge condition, and inductive current iL2 reduces, and if voltage vd1 is less than DC input voitage Vi, inductance L 1 will be in charged state, and inductive current iL1 increases; Voltage vd1 is greater than DC input voitage Vi, and inductance L 1 will be in discharge condition, and inductive current iL1 reduces.Go through several cycles, after the output voltage of circuit reaches set point Vo, circuit has just completed electrifying startup process, enters the steady operation stage.
(2) the circuit steady operation stage: after the output voltage of circuit reaches set point Vo, the Voltage Feedback branch road of circuit just starts to work.When output voltage is during higher than set point Vo, Q2 conducting, shortens the ON time (being t5-t4) of M1, extend the turn-off time (being t4-t3) of M1 by strengthening the discharging current of capacitor C 1, realizes the reduction of output voltage.When output voltage is during lower than set point Vo, Q2 turn-offs, and the basic self-excitation element circuit of single MOSFET works alone, and the turn-on and turn-off time of M1 is recovered again former state, realizes the lifting of output voltage.Thus, circuit can be realized output voltage stabilizing.
After embodiment 1 circuit working, no matter be starting state or steady operation state, as long as overcurrent appears in M1, overcurrent protection branch road will work.When R3, R5 and C2 detect M1 overcurrent, Q1 is conducting immediately, and moment is strengthened the discharging current of capacitor C 1, until vc1 decline and lower than the lower limit reference voltage Vref 1 of U3 after M1 will turn-off, stop electric current in M1 to continue to increase.
Embodiment 2
With reference to Fig. 3, Fig. 4 and Fig. 6, the present embodiment also comprises current feedback branch road, described current feedback branch road comprises detection resistance R 8, voltage amplifier U4, resistance R 6, capacitor C 3, resistance R 7, NPN type BJT Q2 and resistance R 4, detect resistance R 8 and form series arm with load Ro, described series arm is in parallel with output capacitance Co, one end of detecting resistance R 8 is connected with the negative terminal of direct voltage source Vi, the input that detects the other end of resistance R 8 and one end of load Ro and voltage amplifier U4 is connected, resistance R 6 and capacitor C 3 form parallel branch, one end of described parallel branch is connected with the output of voltage amplifier U4, the other end of described parallel branch is connected with one end of resistance R 7 and the base stage of NPN type BJT Q2, the emitter of NPN type BJTQ2 is connected with the negative terminal of the other end of resistance R 7 and direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the input of hysteresis comparator U3 by resistance R 4.
The circuit working principle of the present embodiment is specific as follows:
(1) the circuit electrifying startup stage: identical with embodiment 1, go through several cycles, after the output current of circuit reaches set point Io, circuit has just completed electrifying startup process, enters the steady operation stage.
(2) the circuit steady operation stage: after the output current of circuit reaches set point Io, the current feedback branch road of circuit just starts to work.When output current is when setting Io value, Q2 conducting, by strengthen the discharging current of capacitor C 1 shorten M1 ON time (being t5-t4), the turn-off time (being t4-t3) of prolongation M1 realize the reduction of output current.When output current is during lower than set point Io, Q2 turn-offs, and the basic self-excitation element circuit of single MOSFET works alone, and the turn-on and turn-off time of M1 is recovered again former state, realizes the lifting of output current.Thus, circuit can be realized output current stabilization.
Other circuit structures of the present embodiment are identical with embodiment 1.
Content described in this specification embodiment is only enumerating the way of realization of inventive concept; protection scope of the present invention should not be regarded as only limiting to the concrete form that embodiment states, protection scope of the present invention is also and in those skilled in the art, according to the present invention, conceive the equivalent technologies means that can expect.
Claims (1)
1. the self-excitation Sepic converter based on MOSFET, it is characterized in that: comprise by input capacitance Ci, inductance L 1, N-type MOSFET M1, capacitor C, inductance L 2, the Sepic converter major loop that diode D and capacitor C o form, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with one end of inductance L 1, the other end of inductance L 1 is connected with the drain electrode of N-type MOSFET M1 and one end of capacitor C, the source electrode of N-type MOSFET M1 is connected with one end of resistance R 3, the other end of resistance R 3 is connected with the negative terminal of direct voltage source Vi and the negative terminal of VD Vo, the other end of capacitor C is connected with the anode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the negative terminal of direct voltage source Vi, the negative electrode of diode D is connected with the anode of output voltage V o,
The described self-excitation Sepic converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3, accessory power supply U1 is for the DC power supply voltage that provides drive circuit U2 and hysteresis comparator U3 to work required, and DC input voitage Vi is boosted or the conversion process of step-down; The input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, and drive circuit U2 provides driving for turning on and off of N-type MOSFET M1; The input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1 and one end of resistance R 2, the other end of capacitor C 1 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the drain electrode of N-type MOSFET M1;
The described self-excitation Sepic converter based on MOSFET also comprises overcurrent protection branch road, described overcurrent protection branch road comprises resistance R 5, capacitor C 2 and NPN type BJT Q1, one end of resistance R 5 is connected with the source electrode of N-type MOSFET M1, the other end of resistance R 5 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q1, the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q1 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q1 is connected with the input of hysteresis comparator U3;
The described self-excitation Sepic converter based on MOSFET also comprises Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 6, capacitor C 3, resistance R 7, NPN type BJT Q2 and resistance R 4, resistance R 6 and capacitor C 3 form parallel branch, one end of described parallel branch is connected with the anode of VD Vo, the other end of described parallel branch is connected with one end of resistance R 7 and the base stage of NPN type BJT Q2, the emitter of NPN type BJT Q2 is connected with the other end of resistance R 7 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the input of hysteresis comparator U3 by resistance R 4.
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| CN201110374607.2A CN102403895B (en) | 2011-11-22 | 2011-11-22 | Self-excitation Sepic converter based on MOSFET |
| CN201410178487.2A CN104052279B (en) | 2011-11-22 | 2011-11-22 | A kind of self-excitation Sepic converter based on MOSFET |
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| CN102769380B (en) * | 2012-05-17 | 2014-11-12 | 浙江工业大学 | BJT (Bipolar Junction Transistor) type auto-excitation Buck-Boost converter with little loss driven by main switching tube |
| EP2741582B1 (en) * | 2012-12-04 | 2017-08-09 | LEDVANCE GmbH | A converter circuit |
| CN106787715B (en) * | 2017-01-11 | 2023-04-07 | 深圳硕日新能源科技有限公司 | Self-excitation type voltage reduction circuit |
| CN110048604B (en) * | 2018-04-02 | 2024-05-07 | 浙江工业大学 | Self-excited DC-DC converter with inductance on input side and staggered parallel connection mode thereof |
| CN108880238B (en) * | 2018-07-27 | 2024-02-20 | 河南城建学院 | JFET type self-excited staggered parallel Sepic converter |
| CN109586564A (en) * | 2018-12-19 | 2019-04-05 | 华北电力大学 | A kind of high stability cuk converter |
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| JPH09322563A (en) * | 1996-05-24 | 1997-12-12 | Matsushita Electric Ind Co Ltd | High voltage generator |
| DE10228742A1 (en) * | 2002-06-27 | 2004-01-15 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Supply circuit, in particular for discharge lamps |
| DE10351621B4 (en) * | 2003-11-05 | 2013-05-16 | Osram Gmbh | Electronic ballast and method with weiterzuvertet in case of failure of the light-emitting device converter |
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| US8350546B2 (en) * | 2007-08-15 | 2013-01-08 | Advanced Analogic Technologies, Inc. | High voltage SEPIC converter |
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| CN101877534B (en) * | 2010-06-28 | 2012-05-23 | 浙江工业大学 | Bipolar transistor self-exciting Sepic converter |
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Effective date of registration: 20201202 Address after: No.33 Hengyang South Road, Jinhu County, Huaian City, Jiangsu Province 211600 Patentee after: Jinhu agricultural and sideline products Marketing Association Address before: Hangzhou City, Zhejiang province 310014 City Zhaohui District Six Patentee before: ZHEJIANG University OF TECHNOLOGY |