CN102510217B - MOSFET-based auto-excitation type Zeta converter - Google Patents
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Abstract
An MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor)-based auto-excitation type Zeta converter comprises a Zeta converter main loop consisting of an input capacitor Ci, an N-type MOSFET M1, an inductor L1, a capacitor C, a diode D, an inductor L2 and a capacitor Co. The converter further comprises an auxiliary power supply U1, and adopts a single-MOSFET basic auto-excitation unit circuit consisting of the N-type MOSFET M1, a diode D1, a diode D2, a resistor R1, a resistor R2, a resistor R3, a capacitor C1, a hysteresis comparator U3 and a drive circuit U2. The MOSFET-based auto-excitation type Zeta converter provided by the invention has the advantages of higher efficiency and wider applicable power range.
Description
Technical field
The present invention relates to autonomous DC-DC (DC-DC) converter, be applied to switch voltage-stabilizing or stabilized current power supply, high-brightness LED drive circuit etc., especially a kind of auto-excitation type Zeta converter.
Background technology
Compare with separated exciting DC-DC converter with linear (voltage stabilizing or current stabilization) adjuster, auto-excitation type DC-DC converter has the remarkable advantage that cost performance is high.It is a kind of based on BJT(bipolar transistor that what Fig. 1 provided is) auto-excitation type Zeta converter, comprise by input capacitance Ci, positive-negative-positive BJT Q1, diode D1, inductance L 1, capacitor C, diode D, the Zeta converter major loop of inductance L 2 and output capacitance Co composition, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the negative terminal of direct voltage source Vi is connected with the negative terminal of VD Vo and the anode of diode D, the anode of direct voltage source Vi is connected with the emitter of positive-negative-positive BJT Q1, the collector electrode of positive-negative-positive BJT Q1 is connected with the anode of diode D1 and one end of capacitor C, the negative electrode of diode D1 is connected with one end of inductance L 1, the other end of inductance L 1 is connected with the negative terminal of direct voltage source Vi, the other end of capacitor C is connected with one end of inductance L 2 and the negative electrode of diode D, the other end of inductance L 2 is connected with the anode of output voltage V o.Auto-excitation type Zeta converter based on BJT shown in Fig. 1 also comprises positive-negative-positive BJT Q2, the emitter and collector of positive-negative-positive BJT Q2 is connected with base stage with the emitter of positive-negative-positive BJT Q1 respectively, the base stage of positive-negative-positive BJT Q1 is also connected to the negative terminal of direct voltage source Vi by resistance R 1, resistance R 3 and capacitor C 1 form parallel branch, one end of described parallel branch is connected with the negative electrode of diode D1, the other end of described parallel branch is connected with the base stage of positive-negative-positive BJT Q2 and one end of resistance R 2, and the other end of resistance R 2 is connected with the emitter of positive-negative-positive BJT Q2.Auto-excitation type Zeta converter based on BJT shown in Fig. 1 also comprises Voltage Feedback branch road, the negative electrode of voltage-stabiliser tube Z1 is connected with the anode of VD Vo, the anode of voltage-stabiliser tube Z1 is connected with one end of resistance R 5 and the base stage of NPN type BJT Q3, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q2 by resistance R 4, and the emitter of NPN type BJT Q3 and the other end of resistance R 5 are connected to the negative terminal of direct voltage source Vi.The weak point of this circuit is: main switch Q1 adopts BJT, because the operating characteristic of BJT causes circuit efficiency not high enough, is relatively applicable to the occasion of small-power (several watts of levels are following).
Summary of the invention
Not high enough and be only only applicable to low power deficiency for overcoming auto-excitation type Zeta transducer effciency based on BJT, the invention provides that a kind of efficiency is higher, suitable power wider range based on MOSFET(mos field effect transistor) auto-excitation type Zeta converter.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of auto-excitation type Zeta converter based on MOSFET, comprise by input capacitance Ci, N-type MOSFET M1, inductance L 1, capacitor C, diode D, the Zeta converter major loop of inductance L 2 and capacitor C o composition, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with the drain electrode of N-type MOSFET M1, the source electrode of N-type MOSFETM1 is connected with one end of inductance L 1 and one end of capacitor C, the other end of inductance L 1 is connected with one end of resistance R 5, the other end of resistance R 5 is connected with the negative terminal of direct voltage source Vi, the other end of capacitor C is connected with the negative electrode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the anode of output voltage V o, the negative terminal of direct voltage source Vi is connected with the negative terminal of output voltage V o and the anode of diode D, the described auto-excitation type Zeta converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3, accessory power supply U1 is for the DC power supply voltage that provides drive circuit U2 and hysteresis comparator U3 to work required, and DC input voitage Vi is boosted or the conversion process of step-down, the input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, and drive circuit U2 provides driving for turning on and off of N-type MOSFETM1, the input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1, resistance R 2 and one end of resistance R 3, the other end of capacitor C 1 and resistance R 3 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the source electrode of N-type MOSFET M1.
The described auto-excitation type Zeta converter based on MOSFET also comprises overcurrent protection branch road, described overcurrent protection branch road comprises resistance R 6, capacitor C 2, NPN type BJT Q2 and positive-negative-positive BJT Q1, one end of resistance R 6 is connected with the contact of resistance R 5 with inductance L 1, the other end of resistance R 6 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q2, the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q2 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the base stage of positive-negative-positive BJT Q1, the emitter of positive-negative-positive BJT Q1 is connected with the source electrode of N-type MOSFET M1, the collector electrode of positive-negative-positive BJT Q1 is connected with the input of hysteresis comparator U3.
As preferred a kind of scheme: the described auto-excitation type Zeta converter based on MOSFET also comprises Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1, resistance R 7 and capacitor C 3 form the first parallel branch, one end of described the first parallel branch is connected with the anode of VD Vo, the other end of described the first parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJT Q3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4.
In the present invention, overcurrent protection branch road and Voltage Feedback branch road can share positive-negative-positive BJTQ1.
As preferred another kind of scheme: the described auto-excitation type Zeta converter based on MOSFET also comprises current feedback branch road, described current feedback branch road comprises detection resistance R 9, voltage amplifier U4, resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1, detect resistance R 9 and load Ro composition series arm, described series arm is in parallel with output capacitance Co, one end of detecting resistance R 9 is connected with the negative terminal of direct voltage source Vi, the input that detects the other end of resistance R 9 and one end of load Ro and voltage amplifier U4 is connected, resistance R 7 and capacitor C 3 form the second parallel branch, one end of described the second parallel branch is connected with the output of voltage amplifier U4, the other end of described the second parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJT Q3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4.
In the present invention, overcurrent protection branch road and current feedback branch road can share positive-negative-positive BJTQ1.
Technical conceive of the present invention is: basic single MOSFET self-excitation element circuit is applied in Zeta converter, makes it to become new auto-excitation type DC-DC converter (as shown in Figure 2,3).The basic self-excitation element circuit of single MOSFET is made up of N-type MOSFET M1, diode D1, diode D2, resistance R 1, resistance R 2, resistance R 3, capacitor C 1, hysteresis comparator U3 and drive circuit U2.Its feature is as follows: M1 is the switching device in Zeta converter major loop, the gate pole of M1 is connected with the output of drive circuit U2, the source electrode of M1 is connected with the negative electrode of diode D2 with the anode of diode D1, the negative electrode of D1 is connected with one end of resistance R 1, the anode of D2 is connected with one end of resistance R 2, the other end of resistance R 1 and resistance R 2 all with the input of hysteresis comparator U3, one end of one end of capacitor C 1 and resistance R 3 is connected, the other end of capacitor C 1 and resistance R 3 is connected to the negative terminal of direct voltage source Vi, the output of hysteresis comparator U3 is connected with the input of drive circuit U2.
For obtaining stable VD, between the output of Zeta converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase a Voltage Feedback branch road, can form (as Fig. 2) by positive-negative-positive BJT Q1, NPN type BJT Q3, resistance R 4, resistance R 7, resistance R 8 and capacitor C 3 etc.For obtaining stable average anode current, between the output of Zeta converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase a current feedback branch road, can form (as Fig. 3) by positive-negative-positive BJT Q1, NPN type BJT Q3, resistance R 4, resistance R 7, resistance R 8, resistance R 9, capacitor C 3 and voltage amplifier U4 etc.For preventing L1 overcurrent; between the output of Zeta converter major loop and the port of the basic self-excitation element circuit of single MOSFET, can increase an overcurrent protection branch road, can form (as Fig. 2 and Fig. 3) by resistance R 5, resistance R 6, capacitor C 2, NPN type BJT Q2, positive-negative-positive BJT Q1 etc.
Beneficial effect of the present invention is mainly manifested in: the present invention proposes auto-excitation type Zeta converter based on MOSFET and have the voltage transformation function of buck, circuit structure is simple, efficiency is high, is applicable to the application such as middle low power (more than tens of watts of levels) switch voltage-stabilizing or stabilized current power supply, high-brightness LED drive circuit.
Accompanying drawing explanation
Fig. 1 is the existing auto-excitation type Zeta converter circuit figure based on BJT.
Fig. 2 is auto-excitation type Zeta converter embodiment 1 circuit diagram based on MOSFET.
Fig. 3 is auto-excitation type Zeta converter embodiment 2 circuit diagrams based on MOSFET.
Fig. 4 is the input-output voltage characteristic figure of hysteresis comparator U3 in auto-excitation type Zeta converter embodiment 1 based on MOSFET and embodiment 2.
Fig. 5 is auto-excitation type Zeta converter embodiment 1 based on the MOSFET ideal waveform figure under continuous current mode mode of operation.
Fig. 6 is auto-excitation type Zeta converter embodiment 2 based on the MOSFET ideal waveform figure under continuous current mode mode of operation.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment 1
With reference to Fig. 2, Fig. 4 and Fig. 5, a kind of auto-excitation type Zeta converter based on MOSFET, comprise by input capacitance Ci, N-type MOSFET M1, inductance L 1, capacitor C, diode D, the Zeta converter major loop of inductance L 2 and capacitor C o composition, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with the drain electrode of N-type MOSFET M1, the source electrode of N-type MOSFET M1 is connected with one end of inductance L 1 and one end of capacitor C, the other end of inductance L 1 is connected with one end of resistance R 5, the other end of resistance R 5 is connected with the negative terminal of direct voltage source Vi, the other end of capacitor C is connected with the negative electrode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the anode of output voltage V o, the negative terminal of direct voltage source Vi is connected with the negative terminal of output voltage V o and the anode of diode D, the described auto-excitation type Zeta converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3, accessory power supply U1 is for providing drive circuit U2 and the hysteresis comparator U3 required various DC power supply voltages of working, can boost or the conversion process of step-down to DC input voitage Vi according to actual needs, the input of drive circuit U2 is connected with the output of hysteresis comparator U3, the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, drive circuit U2 is that N-type MOSFET M1(is main switch) turn on and off the driving that provides necessary.The input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1, resistance R 2 and one end of resistance R 3, the other end of capacitor C 1 and resistance R 3 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the source electrode of N-type MOSFET M1.
Figure 2 shows that the auto-excitation type Cuk converter embodiment 1 based on MOSFET, adopt overcurrent protection branch road, described overcurrent protection branch road comprises resistance R 6, capacitor C 2, NPN type BJTQ2 and positive-negative-positive BJT Q1, one end of resistance R 6 is connected with the contact of resistance R 5 with inductance L 1, the other end of resistance R 6 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q2, the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q2 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the base stage of positive-negative-positive BJT Q1, the emitter of positive-negative-positive BJT Q1 is connected with the source electrode of N-type MOSFET M1, the collector electrode of positive-negative-positive BJTQ1 is connected with the input of hysteresis comparator U3, also adopt Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1, resistance R 7 and capacitor C 3 form the first parallel branch, one end of described the first parallel branch is connected with the anode of VD Vo, the other end of described the first parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJT Q3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4.
In the present embodiment, overcurrent protection branch road and Voltage Feedback branch road can share positive-negative-positive BJTQ1.Certainly, also can only adopt overcurrent protection branch road or Voltage Feedback branch road.
The ideal waveform figure of auto-excitation type Zeta converter embodiment 1 based on MOSFET shown in Fig. 5 under continuous current mode mode of operation.Its circuit working principle is specific as follows:
(1) in the circuit electrifying startup stage: after circuit powers on, accessory power supply U1 starts working, convert DC input voitage Vi to drive circuit U2 and the hysteresis comparator U3 required voltage of working.Subsequently, drive circuit U2 and hysteresis comparator U3 also start working.Just having started is t=t0, and the terminal voltage vc1 of capacitor C 1 is zero, and because vc1 is less than the lower limit reference voltage Vref 1 of U3, U3 output vp high level, through U2 level conversion output vgs1 high level, M1 conducting.After M1 conducting, diode D cut-off, forms loop by Vi, Ci, M1, L1, R5, form another loop by Vi, Ci, M1, C, L2, Co, Ro, inductance L 1 and L2 charging, inductive current iL1, iL2 increase, capacitor C reverse charging, output capacitance Co positive charge, voltage vs1 equals Vi.Meanwhile, C1 is by D1 and R1 charging, and voltage vc1 rises.The upper limit reference voltage Vref 2 that rises to U3 as vc1 is t=t1, U3 output vp low level, and through U2 level conversion output vgs1 low level, M1 turn-offs.M1 closes and has no progeny, and D conducting, forms loop by C, L1, R5, D, forms another loop by L2, Co, Ro, D, capacitor C and Co positive charge, and inductance L 1 and L2 electric discharge, inductive current iL1 and iL2 reduce, equal-vc of voltage vs1, output voltage vo rises.C1 is by D2 and R2 electric discharge simultaneously, and voltage vc1 declines.The lower limit reference voltage Vref 1 that drops to U3 as vc1 is t=t2, U3 output vp high level, and through U2 level conversion output vgs1 high level, M1 is conducting again, and circuit enters next from flyback cycle.Go through several cycles, after the output voltage of circuit reaches set point Vo, circuit has just completed electrifying startup process, enters the steady operation stage.
(2) the circuit steady operation stage: after the output voltage of circuit reaches set point Vo, the Voltage Feedback branch road of circuit just starts to work.When output voltage is during higher than set point Vo, Q3 conducting, shortens the ON time (being t4-t3) of M1 by strengthening the charging current of capacitor C 1, realize the reduction of output voltage.When output voltage is during lower than set point Vo, Q3 turn-offs, and the basic self-excitation element circuit of single MOSFET works alone, and the ON time of M1 is recovered again former state, realizes the lifting of output voltage.Thus, circuit can be realized output voltage stabilizing.
After embodiment 1 circuit working, no matter be starting state or steady operation state, as long as overcurrent appears in L1, overcurrent protection branch road will work.When R5, R6 and C2 detect L1 overcurrent, Q2 and Q1 conducting immediately, moment is strengthened the charging current of capacitor C 1, until vc1 rise rapidly and higher than the upper limit reference voltage Vref 2 of U3 after M1 will turn-off, stop electric current in L1 to continue to increase.
Embodiment 2
With reference to Fig. 3, Fig. 4 and Fig. 6, the present embodiment also comprises current feedback branch road, described current feedback branch road comprises detection resistance R 9, voltage amplifier U4, resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1, detect resistance R 9 and load Ro composition series arm, described series arm is in parallel with output capacitance Co, one end of detecting resistance R 9 is connected with the negative terminal of direct voltage source Vi, the input that detects the other end of resistance R 9 and one end of load Ro and voltage amplifier U4 is connected, resistance R 7 and capacitor C 3 form the second parallel branch, one end of described the second parallel branch is connected with the output of voltage amplifier U4, the other end of described the second parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJTQ3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4, the emitter of positive-negative-positive BJT Q1 is connected with the source electrode of N-type MOSFET M1, the collector electrode of positive-negative-positive BJT Q1 is connected with the input of hysteresis comparator U3.
In the present invention, overcurrent protection branch road and current feedback branch road can share positive-negative-positive BJTQ1.Certainly, also can only adopt overcurrent protection branch road or current feedback branch road.
The circuit working principle of the present embodiment is specific as follows:
(1) the circuit electrifying startup stage: identical with embodiment 1, go through several cycles, after the output current of circuit reaches set point Io, circuit has just completed electrifying startup process, enters the steady operation stage.
(2) the circuit steady operation stage: after the output current of circuit reaches set point Io, the current feedback branch road of circuit just starts to work.When output current is during higher than set point Io, Q3 conducting, shortens the ON time (being t4-t3) of M1 by strengthening the charging current of capacitor C 1, realize the reduction of output current.When output current is during lower than set point Io, Q3 turn-offs, and the basic self-excitation element circuit of single MOSFET works alone, and the ON time of M1 is recovered again former state, realizes the lifting of output current.Thus, circuit can be realized output current stabilization.
Other circuit structures of the present embodiment are identical with embodiment 1.
Content described in this specification embodiment is only enumerating of way of realization to inventive concept; protection scope of the present invention should not be regarded as only limiting to the concrete form that embodiment states, protection scope of the present invention is also and conceive the equivalent technologies means that can expect according to the present invention in those skilled in the art.
Claims (3)
1. the auto-excitation type Zeta converter based on MOSFET, it is characterized in that: comprise by input capacitance Ci, N-type MOSFET M1, inductance L 1, capacitor C, diode D, the Zeta converter major loop of inductance L 2 and capacitor C o composition, input capacitance Ci is in parallel with direct voltage source Vi, output capacitance Co both end voltage is VD Vo, load Ro is in parallel with output capacitance Co, the anode of direct voltage source Vi is connected with the drain electrode of N-type MOSFET M1, the source electrode of N-type MOSFET M1 is connected with one end of inductance L 1 and one end of capacitor C, the other end of inductance L 1 is connected with one end of resistance R 5, the other end of resistance R 5 is connected with the negative terminal of direct voltage source Vi, the other end of capacitor C is connected with the negative electrode of diode D and one end of inductance L 2, the other end of inductance L 2 is connected with the anode of output voltage V o, the negative terminal of direct voltage source Vi is connected with the negative terminal of output voltage V o and the anode of diode D,
The described auto-excitation type Zeta converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3, accessory power supply U1 is for the DC power supply voltage that provides drive circuit U2 and hysteresis comparator U3 to work required, and DC input voitage Vi is boosted or the conversion process of step-down; The input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 is connected with the gate pole of N-type MOSFET M1, and drive circuit U2 provides driving for turning on and off of N-type MOSFET M1; The input of hysteresis comparator U3 is connected with capacitor C 1, resistance R 1, resistance R 2 and one end of resistance R 3, the other end of capacitor C 1 and resistance R 3 is connected with the negative terminal of direct voltage source Vi, the other end of resistance R 1 is connected with the negative electrode of diode D1, the other end of resistance R 2 is connected with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 is connected with the source electrode of N-type MOSFET M1;
The described auto-excitation type Zeta converter based on MOSFET also comprises overcurrent protection branch road, described overcurrent protection branch road comprises resistance R 6, capacitor C 2, NPN type BJT Q2 and positive-negative-positive BJT Q1, one end of resistance R 6 is connected with the contact of resistance R 5 with inductance L 1, the other end of resistance R 6 is connected with one end of capacitor C 2 and the base stage of NPN type BJT Q2, the other end of capacitor C 2 is connected with the emitter of NPN type BJT Q2 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q2 is connected with the base stage of positive-negative-positive BJT Q1, the emitter of positive-negative-positive BJT Q1 is connected with the source electrode of N-type MOSFET M1, the collector electrode of positive-negative-positive BJT Q1 is connected with the input of hysteresis comparator U3.
2. the auto-excitation type Zeta converter based on MOSFET as claimed in claim 1, it is characterized in that: the described auto-excitation type Zeta converter based on MOSFET also comprises Voltage Feedback branch road, described Voltage Feedback branch road comprises resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3 and resistance R 4, resistance R 7 and capacitor C 3 form the first parallel branch, one end of described the first parallel branch is connected with the anode of VD Vo, the other end of described the first parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJT Q3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4.
3. the auto-excitation type Zeta converter based on MOSFET as claimed in claim 1, it is characterized in that: the described auto-excitation type Zeta converter based on MOSFET also comprises current feedback branch road, described current feedback branch road comprises detection resistance R 9, voltage amplifier U4, resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3 and resistance R 4, detect resistance R 9 and load Ro composition series arm, described series arm is in parallel with output capacitance Co, one end of detecting resistance R 9 is connected with the negative terminal of direct voltage source Vi, the input that detects the other end of resistance R 9 and one end of load Ro and voltage amplifier U4 is connected, resistance R 7 and capacitor C 3 form the second parallel branch, one end of described the second parallel branch is connected with the output of voltage amplifier U4, the other end of described the second parallel branch is connected with one end of resistance R 8 and the base stage of NPN type BJT Q3, the emitter of NPN type BJT Q3 is connected with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, the collector electrode of NPN type BJT Q3 is connected with the base stage of positive-negative-positive BJT Q1 by resistance R 4.
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Effective date of registration: 20201130 Address after: No.33 Hengyang South Road, Jinhu County, Huaian City, Jiangsu Province 211600 Patentee after: Jinhu agricultural and sideline products Marketing Association Address before: Hangzhou City, Zhejiang province 310014 City Zhaohui District Six Patentee before: ZHEJIANG University OF TECHNOLOGY |