CN102510217A - MOSFET-based auto-excitation type Zeta converter - Google Patents

MOSFET-based auto-excitation type Zeta converter Download PDF

Info

Publication number
CN102510217A
CN102510217A CN201110374592XA CN201110374592A CN102510217A CN 102510217 A CN102510217 A CN 102510217A CN 201110374592X A CN201110374592X A CN 201110374592XA CN 201110374592 A CN201110374592 A CN 201110374592A CN 102510217 A CN102510217 A CN 102510217A
Authority
CN
China
Prior art keywords
resistor
bjt
capacitor
mosfet
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201110374592XA
Other languages
Chinese (zh)
Other versions
CN102510217B (en
Inventor
陈怡�
南余荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jinhu Agricultural And Sideline Products Marketing Association
Original Assignee
Zhejiang University of Technology ZJUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University of Technology ZJUT filed Critical Zhejiang University of Technology ZJUT
Priority to CN201110374592.XA priority Critical patent/CN102510217B/en
Publication of CN102510217A publication Critical patent/CN102510217A/en
Application granted granted Critical
Publication of CN102510217B publication Critical patent/CN102510217B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dc-Dc Converters (AREA)

Abstract

An MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor)-based auto-excitation type Zeta converter comprises a Zeta converter main loop consisting of an input capacitor Ci, an N-type MOSFET M1, an inductor L1, a capacitor C, a diode D, an inductor L2 and a capacitor Co. The converter further comprises an auxiliary power supply U1, and adopts a single-MOSFET basic auto-excitation unit circuit consisting of the N-type MOSFET M1, a diode D1, a diode D2, a resistor R1, a resistor R2, a resistor R3, a capacitor C1, a hysteresis comparator U3 and a drive circuit U2. The MOSFET-based auto-excitation type Zeta converter provided by the invention has the advantages of higher efficiency and wider applicable power range.

Description

Auto-excitation type Zeta converter based on MOSFET
Technical field
The present invention relates to autonomous DC-DC (DC-DC) converter, be applied to switch voltage-stabilizing or stabilized current power supply, high-brightness LED drive circuit etc., especially a kind of auto-excitation type Zeta converter.
Background technology
Compare with separated exciting DC-DC converter with linear (voltage stabilizing or current stabilization) adjuster, auto-excitation type DC-DC converter has the high remarkable advantage of cost performance.What Fig. 1 provided is a kind of auto-excitation type Zeta converter based on BJT (bipolar transistor); Comprise the Zeta converter major loop of forming by input capacitance Ci, positive-negative-positive BJT Q1, diode D1, inductance L 1, capacitor C, diode D, inductance L 2 and output capacitance Co; Input capacitance Ci is parallelly connected with direct voltage source Vi; Output capacitance Co voltage is VD Vo, and load Ro is parallelly connected with output capacitance Co, and the negative terminal of direct voltage source Vi links to each other with the negative terminal of VD Vo and the anode of diode D; The anode of direct voltage source Vi links to each other with the emitter of positive-negative-positive BJT Q1; The collector electrode of positive-negative-positive BJT Q1 links to each other with an end of the anode of diode D1 and capacitor C, and the negative electrode of diode D1 links to each other with an end of inductance L 1, and the other end of inductance L 1 links to each other with the negative terminal of direct voltage source Vi; The other end of capacitor C links to each other with an end of inductance L 2 and the negative electrode of diode D, and the other end of inductance L 2 links to each other with the anode of output voltage V o.Auto-excitation type Zeta converter based on BJT shown in Figure 1 also comprises positive-negative-positive BJT Q2; The emitter and collector of positive-negative-positive BJT Q2 links to each other with base stage with the emitter of positive-negative-positive BJT Q1 respectively; The base stage of positive-negative-positive BJT Q1 also is connected to the negative terminal of direct voltage source Vi through resistance R 1; Resistance R 3 is formed parallel branch with capacitor C 1; One end of said parallel branch links to each other with the negative electrode of diode D1, and the other end of said parallel branch links to each other with the base stage of positive-negative-positive BJT Q2 and an end of resistance R 2, and the other end of resistance R 2 links to each other with the emitter of positive-negative-positive BJT Q2.Auto-excitation type Zeta converter based on BJT shown in Figure 1 also comprises the Voltage Feedback branch road; The negative electrode of voltage-stabiliser tube Z1 links to each other with the anode of VD Vo; The anode of voltage-stabiliser tube Z1 links to each other with an end of resistance R 5 and the base stage of NPN type BJT Q3; The collector electrode of NPN type BJT Q3 links to each other with the base stage of positive-negative-positive BJT Q2 through resistance R 4, and the emitter of NPN type BJT Q3 and the other end of resistance R 5 are connected to the negative terminal of direct voltage source Vi.The weak point of this circuit is: main switch Q1 adopts BJT, because of the operating characteristic of BJT causes circuit efficiency not high enough, relatively is fit to the occasion of small-power (several watts levels below).
Summary of the invention
Not high enough and only be applicable to that low power deficiency, the present invention provide that a kind of efficient is higher, the auto-excitation type Zeta converter based on MOSFET (mos field effect transistor) of suitable power wider range for overcoming based on the auto-excitation type Zeta transducer effciency of BJT.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of auto-excitation type Zeta converter based on MOSFET; Comprise the Zeta converter major loop of forming by input capacitance Ci, N type MOSFET M1, inductance L 1, capacitor C, diode D, inductance L 2 and capacitor C o; Input capacitance Ci is parallelly connected with direct voltage source Vi; Output capacitance Co voltage is VD Vo, and load Ro is parallelly connected with output capacitance Co, and the anode of direct voltage source Vi links to each other with the drain electrode of N type MOSFET M1; The source electrode of N type MOSFETM1 links to each other with an end of an end of inductance L 1 and capacitor C; The other end of inductance L 1 links to each other with an end of resistance R 5, and the other end of resistance R 5 links to each other with the negative terminal of direct voltage source Vi, and the other end of capacitor C links to each other with the negative electrode of diode D and an end of inductance L 2; The other end of inductance L 2 links to each other with the anode of output voltage V o, and the negative terminal of direct voltage source Vi links to each other with the negative terminal of output voltage V o and the anode of diode D; Said auto-excitation type Zeta converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3; Accessory power supply U1 is used to provide drive circuit U2 and the required DC power supply voltage of hysteresis comparator U3 work, and DC input voitage Vi is boosted or the conversion process of step-down; The input of drive circuit U2 is connected with the output of hysteresis comparator U3, and the output of drive circuit U2 links to each other with the gate pole of N type MOSFET M1, and drive circuit U2 is that turning on and off of N type MOSFETM1 provides driving; The input of hysteresis comparator U3 links to each other with an end of capacitor C 1, resistance R 1, resistance R 2 and resistance R 3; The other end of capacitor C 1 and resistance R 3 links to each other with the negative terminal of direct voltage source Vi; The other end of resistance R 1 links to each other with the negative electrode of diode D1; The other end of resistance R 2 links to each other with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 links to each other with the source electrode of N type MOSFET M1.
Said auto-excitation type Zeta converter based on MOSFET also comprises the overcurrent protection branch road; Said overcurrent protection branch road comprises resistance R 6, capacitor C 2, NPN type BJT Q2 and positive-negative-positive BJT Q1; One end of resistance R 6 links to each other with the contact of inductance L 1 with resistance R 5; The other end of resistance R 6 links to each other with an end of capacitor C 2 and the base stage of NPN type BJT Q2; The other end of capacitor C 2 links to each other with the emitter of NPN type BJT Q2 and the negative terminal of direct voltage source Vi; The collector electrode of NPN type BJT Q2 links to each other with the base stage of positive-negative-positive BJT Q1, and the emitter of positive-negative-positive BJT Q1 links to each other with the source electrode of N type MOSFET M1, and the collector electrode of positive-negative-positive BJT Q1 links to each other with the input of hysteresis comparator U3.
As preferred a kind of scheme: said auto-excitation type Zeta converter based on MOSFET also comprises the Voltage Feedback branch road; Said Voltage Feedback branch road comprises resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1; Resistance R 7 is formed parallel branch with capacitor C 3; One end of said parallel branch links to each other with the anode of VD Vo; The other end of said parallel branch links to each other with an end of resistance R 8 and the base stage of NPN type BJT Q3, and the emitter of NPN type BJT Q3 links to each other with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q3 links to each other with the base stage of positive-negative-positive BJT Q1 through resistance R 4.
Among the present invention, overcurrent protection branch road and Voltage Feedback branch road can shared positive-negative-positive BJTQ1.
As preferred another kind of scheme: said auto-excitation type Zeta converter based on MOSFET also comprises the current feedback branch road; Said current feedback branch road comprises detection resistance R 9, voltage amplifier U4, resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1; Detect resistance R 9 and form series arm with load Ro; Said series arm is parallelly connected with output capacitance Co; An end that detects resistance R 9 links to each other with the negative terminal of direct voltage source Vi, and the other end that detects resistance R 9 links to each other with the end of load Ro and the input of voltage amplifier U4, and resistance R 7 is formed parallel branch with capacitor C 3; One end of said parallel branch links to each other with the output of voltage amplifier U4; The other end of said parallel branch links to each other with an end of resistance R 8 and the base stage of NPN type BJT Q3, and the emitter of NPN type BJT Q3 links to each other with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q3 links to each other with the base stage of positive-negative-positive BJT Q1 through resistance R 4.
Among the present invention, overcurrent protection branch road and current feedback branch road can shared positive-negative-positive BJTQ1.
Technical conceive of the present invention is: the basic self-excitation element circuit of single MOSFET is applied in the Zeta converter, makes it to become new auto-excitation type DC-DC converter (like Fig. 2, shown in 3).The basic self-excitation element circuit of single MOSFET is made up of N type MOSFET M1, diode D1, diode D2, resistance R 1, resistance R 2, resistance R 3, capacitor C 1, hysteresis comparator U3 and drive circuit U2.Its characteristic is following: M1 is the switching device in the Zeta converter major loop; The gate pole of M1 links to each other with the output of drive circuit U2; The source electrode of M1 links to each other with the anode of diode D1 and the negative electrode of diode D2; The negative electrode of D1 links to each other with an end of resistance R 1, and the anode of D2 links to each other with an end of resistance R 2, and the other end of resistance R 1 and resistance R 2 all links to each other with the input of hysteresis comparator U3, an end of capacitor C 1 and an end of resistance R 3; The other end of capacitor C 1 and resistance R 3 is connected to the negative terminal of direct voltage source Vi, and the output of hysteresis comparator U3 links to each other with the input of drive circuit U2.
For obtaining stable VD; Between the port of the output of Zeta converter major loop and the basic self-excitation element circuit of single MOSFET, can increase a Voltage Feedback branch road, can form (like Fig. 2) by positive-negative-positive BJT Q1, NPN type BJT Q3, resistance R 4, resistance R 7, resistance R 8 and capacitor C 3 etc.For obtaining stable average anode current; Between the port of the output of Zeta converter major loop and the basic self-excitation element circuit of single MOSFET, can increase a current feedback branch road, can form (like Fig. 3) by positive-negative-positive BJT Q1, NPN type BJT Q3, resistance R 4, resistance R 7, resistance R 8, resistance R 9, capacitor C 3 and voltage amplifier U4 etc.For preventing the L1 overcurrent; Between the port of the output of Zeta converter major loop and the basic self-excitation element circuit of single MOSFET, can increase an overcurrent protection branch road, can form (like Fig. 2 and Fig. 3) by resistance R 5, resistance R 6, capacitor C 2, NPN type BJT Q2, positive-negative-positive BJT Q1 etc.
Beneficial effect of the present invention mainly shows: the present invention proposes to have based on the auto-excitation type Zeta converter of MOSFET the voltage transformation function of buck; Circuit structure is simple, efficient is high, is fit to middle low power (more than the tens of watts of levels) switch voltage-stabilizing or application such as stabilized current power supply, high-brightness LED drive circuit.
Description of drawings
Fig. 1 is existing auto-excitation type Zeta converter circuit figure based on BJT.
Fig. 2 is based on auto-excitation type Zeta converter embodiment 1 circuit diagram of MOSFET.
Fig. 3 is based on auto-excitation type Zeta converter embodiment 2 circuit diagrams of MOSFET.
The input-output voltage characteristic figure of hysteresis comparator U3 among the auto-excitation type Zeta converter embodiment 1 that Fig. 4 is based on MOSFET and the embodiment 2.
Fig. 5 is based on the ideal waveform figure of auto-excitation type Zeta converter embodiment 1 under the inductive current continuous operation mode of MOSFET.
Fig. 6 is based on the ideal waveform figure of auto-excitation type Zeta converter embodiment 2 under the inductive current continuous operation mode of MOSFET.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
Embodiment 1
With reference to Fig. 2, Fig. 4 and Fig. 5; A kind of auto-excitation type Zeta converter based on MOSFET; Comprise the Zeta converter major loop of being made up of input capacitance Ci, N type MOSFET M1, inductance L 1, capacitor C, diode D, inductance L 2 and capacitor C o, input capacitance Ci is parallelly connected with direct voltage source Vi, and output capacitance Co voltage is VD Vo; Load Ro is parallelly connected with output capacitance Co; The anode of direct voltage source Vi links to each other with the drain electrode of N type MOSFET M1, and the source electrode of N type MOSFET M1 links to each other with an end of inductance L 1 and an end of capacitor C, and the other end of inductance L 1 links to each other with an end of resistance R 5; The other end of resistance R 5 links to each other with the negative terminal of direct voltage source Vi; The other end of capacitor C links to each other with the negative electrode of diode D and an end of inductance L 2, and the other end of inductance L 2 links to each other with the anode of output voltage V o, and the negative terminal of direct voltage source Vi links to each other with the negative terminal of output voltage V o and the anode of diode D; Said auto-excitation type Zeta converter based on MOSFET also comprises accessory power supply U1, drive circuit U2 and hysteresis comparator U3; Accessory power supply U1 is used to provide drive circuit U2 and the required various DC power supply voltages of hysteresis comparator U3 work; Can boost or the conversion process of step-down to DC input voitage Vi according to actual needs; The input of drive circuit U2 is connected with the output of hysteresis comparator U3; The output of drive circuit U2 links to each other with the gate pole of N type MOSFET M1, and drive circuit U2 is that turning on and off of N type MOSFET M1 (being main switch) provides necessary driving.The input of hysteresis comparator U3 links to each other with an end of capacitor C 1, resistance R 1, resistance R 2 and resistance R 3; The other end of capacitor C 1 and resistance R 3 links to each other with the negative terminal of direct voltage source Vi; The other end of resistance R 1 links to each other with the negative electrode of diode D1; The other end of resistance R 2 links to each other with the anode of diode D2, and the negative electrode of the anode of diode D1 and diode D2 links to each other with the source electrode of N type MOSFET M1.
Shown in Figure 2 is auto-excitation type Cuk converter embodiment 1 based on MOSFET; Adopted the overcurrent protection branch road; Said overcurrent protection branch road comprises resistance R 6, capacitor C 2, NPN type BJTQ2 and positive-negative-positive BJT Q1; One end of resistance R 6 links to each other with the contact of inductance L 1 with resistance R 5; The other end of resistance R 6 links to each other with an end of capacitor C 2 and the base stage of NPN type BJT Q2, and the other end of capacitor C 2 links to each other with the emitter of NPN type BJT Q2 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q2 links to each other with the base stage of positive-negative-positive BJT Q1; The emitter of positive-negative-positive BJT Q1 links to each other with the source electrode of N type MOSFET M1, and the collector electrode of positive-negative-positive BJTQ1 links to each other with the input of hysteresis comparator U3; Also adopted the Voltage Feedback branch road; Said Voltage Feedback branch road comprises resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1; Resistance R 7 is formed parallel branch with capacitor C 3; One end of said parallel branch links to each other with the anode of VD Vo; The other end of said parallel branch links to each other with an end of resistance R 8 and the base stage of NPN type BJT Q3, and the emitter of NPN type BJT Q3 links to each other with the other end of resistance R 8 and the negative terminal of direct voltage source Vi, and the collector electrode of NPN type BJT Q3 links to each other with the base stage of positive-negative-positive BJT Q1 through resistance R 4.
In the present embodiment, overcurrent protection branch road and Voltage Feedback branch road can shared positive-negative-positive BJTQ1.Certainly, also can only adopt overcurrent protection branch road or Voltage Feedback branch road.
The ideal waveform figure of auto-excitation type Zeta converter embodiment 1 under the inductive current continuous operation mode based on MOSFET shown in Figure 5.Its circuit working principle is specific as follows:
(1) the circuit electrifying startup stage: after circuit powered on, accessory power supply U1 started working, and converted DC input voitage Vi to drive circuit U2 and the required voltage of hysteresis comparator U3 work.Subsequently, drive circuit U2 and hysteresis comparator U3 also start working.Just having begun is t=t0, and the terminal voltage vc1 of capacitor C 1 is zero, and because of the lower limit reference voltage Vref 1 of vc1 less than U3, U3 output vp high level is through U2 level conversion output vgs1 high level, M1 conducting.After the M1 conducting, diode D ends, and forms the loop by Vi, Ci, M1, L1, R5; Form another loop by Vi, Ci, M1, C, L2, Co, Ro, inductance L 1 increases with L2 charging, inductive current iL1, iL2; The capacitor C reverse charging, output capacitance Co positive charge, voltage vs1 equals Vi.Simultaneously, C1 is through D1 and R1 charging, and voltage vc1 rises.The upper limit reference voltage Vref 2 that rises to U3 as vc1 is t=t1, U3 output vp low level, and through U2 level conversion output vgs1 low level, M1 turn-offs.M1 closes and has no progeny, and the D conducting forms the loop by C, L1, R5, D, forms another loop by L2, Co, Ro, D, capacitor C and Co positive charge, and inductance L 1 and L2 discharge, inductive current iL1 and iL2 reduce, and voltage vs1 equals-vc, and output voltage vo rises.C1 is through D2 and R2 discharge simultaneously, and voltage vc1 descends.The lower limit reference voltage Vref 1 that drops to U3 as vc1 is t=t2, U3 output vp high level, and through U2 level conversion output vgs1 high level, M1 is conducting once more, and circuit gets into next from flyback cycle.Go through several cycles, after the output voltage of circuit reached set point Vo, circuit had just been accomplished the electrifying startup process, got into the steady operation stage.
(2) the circuit steady operation stage: after the output voltage of circuit reached set point Vo, the Voltage Feedback branch road of circuit just began to work.When output voltage was higher than set point Vo, the Q3 conducting was shortened the ON time (being t4-t3) of M1 through the charging current that strengthens capacitor C 1, realizes the reduction of output voltage.When output voltage was lower than set point Vo, Q3 turn-offed, and the basic self-excitation element circuit of single MOSFET works alone, and the ON time of M1 recovers former state again, realized the lifting of output voltage.Thus, circuit can realize exporting voltage stabilizing.
Behind embodiment 1 circuit working, no matter be starting state or steady operation state, as long as overcurrent appears in L1, the overcurrent protection branch road will work.When R5, R6 and C2 detect the L1 overcurrent, Q2 and Q1 conducting immediately, moment is strengthened the charging current of capacitor C 1, treats that vc1 rises rapidly and the upper limit reference voltage Vref 2 back M1 that are higher than U3 will turn-off, and stops that electric current continues to increase among the L1.
Embodiment 2
With reference to Fig. 3, Fig. 4 and Fig. 6; Present embodiment also comprises the current feedback branch road; Said current feedback branch road comprises detection resistance R 9, voltage amplifier U4, resistance R 7, capacitor C 3, resistance R 8, NPN type BJT Q3, resistance R 4 and positive-negative-positive BJT Q1; Detect resistance R 9 and form series arm with load Ro, said series arm is parallelly connected with output capacitance Co, and an end that detects resistance R 9 links to each other with the negative terminal of direct voltage source Vi; The other end that detects resistance R 9 links to each other with the end of load Ro and the input of voltage amplifier U4; Resistance R 7 is formed parallel branch with capacitor C 3, and an end of said parallel branch links to each other with the output of voltage amplifier U4, and the other end of said parallel branch links to each other with an end of resistance R 8 and the base stage of NPN type BJT Q3; The emitter of NPN type BJT Q3 links to each other with the other end of resistance R 8 and the negative terminal of direct voltage source Vi; The collector electrode of NPN type BJT Q3 links to each other with the base stage of positive-negative-positive BJT Q1 through resistance R 4, and the emitter of positive-negative-positive BJT Q1 links to each other with the source electrode of N type MOSFET M1, and the collector electrode of positive-negative-positive BJT Q1 links to each other with the input of hysteresis comparator U3.
Among the present invention, overcurrent protection branch road and current feedback branch road can shared positive-negative-positive BJTQ1.Certainly, also can only adopt overcurrent protection branch road or current feedback branch road.
The circuit working principle of present embodiment is specific as follows:
(1) the circuit electrifying startup stage: identical with embodiment 1, go through several cycles, after the output current of circuit reached set point Io, circuit had just been accomplished the electrifying startup process, got into the steady operation stage.
(2) the circuit steady operation stage: after the output current of circuit reached set point Io, the current feedback branch road of circuit just began to work.When output current was higher than set point Io, the Q3 conducting was shortened the ON time (being t4-t3) of M1 through the charging current that strengthens capacitor C 1, realizes the reduction of output current.When output current was lower than set point Io, Q3 turn-offed, and the basic self-excitation element circuit of single MOSFET works alone, and the ON time of M1 recovers former state again, realized the lifting of output current.Thus, circuit can realize exporting current stabilization.
Other circuit structures of present embodiment are identical with embodiment 1.
The described content of this specification embodiment only is enumerating the way of realization of inventive concept; Should not being regarded as of protection scope of the present invention only limits to the concrete form that embodiment states, protection scope of the present invention also reach in those skilled in the art conceive according to the present invention the equivalent technologies means that can expect.

Claims (6)

1.一种基于MOSFET的自激式Zeta变换器,其特征在于:包括由输入电容Ci、N型MOSFET M1、电感L1、电容C、二极管D、电感L2和电容Co组成的Zeta变换器主回路,输入电容Ci与直流电压源Vi并联,输出电容Co两端电压为直流输出电压Vo,负载Ro与输出电容Co并联,直流电压源Vi的正端与N型MOSFET M1的漏极相连,N型MOSFET M1的源极与电感L1的一端以及电容C的一端相连,电感L1的另一端与电阻R5的一端相连,电阻R5的另一端与直流电压源Vi的负端相连,电容C的另一端与二极管D的阴极以及电感L2的一端相连,电感L2的另一端与输出电压Vo的正端相连,直流电压源Vi的负端与输出电压Vo的负端以及二极管D的阳极相连;1. A self-excited Zeta converter based on MOSFET is characterized in that: it comprises a Zeta converter main circuit composed of input capacitor Ci, N-type MOSFET M1, inductor L1, capacitor C, diode D, inductor L2 and capacitor Co , the input capacitor Ci is connected in parallel with the DC voltage source Vi, the voltage across the output capacitor Co is the DC output voltage Vo, the load Ro is connected in parallel with the output capacitor Co, the positive terminal of the DC voltage source Vi is connected to the drain of the N-type MOSFET M1, and the N-type The source of MOSFET M1 is connected to one end of inductor L1 and one end of capacitor C, the other end of inductor L1 is connected to one end of resistor R5, the other end of resistor R5 is connected to the negative end of DC voltage source Vi, and the other end of capacitor C is connected to The cathode of the diode D is connected to one end of the inductor L2, the other end of the inductor L2 is connected to the positive end of the output voltage Vo, and the negative end of the DC voltage source Vi is connected to the negative end of the output voltage Vo and the anode of the diode D; 所述基于MOSFET的自激式Zeta变换器还包括辅助电源U1、驱动电路U2和滞环比较器U3,辅助电源U1用于提供驱动电路U2和滞环比较器U3工作所需的直流电源电压,对直流输入电压Vi进行升压或降压的变换处理;驱动电路U2的输入端与滞环比较器U3的输出端连接,驱动电路U2的输出端与N型MOSFET M1的门极相连,驱动电路U2为N型MOSFET M1的开通和关断提供驱动;滞环比较器U3的输入端与电容C1、电阻R1、电阻R2和电阻R3的一端相连,电容C1和电阻R3的另一端与直流电压源Vi的负端相连,电阻R1的另一端与二极管D1的阴极相连,电阻R2的另一端与二极管D2的阳极相连,二极管D1的阳极和二极管D2的阴极与N型MOSFET M1的源极相连。The self-excited Zeta converter based on MOSFET also includes an auxiliary power supply U1, a drive circuit U2 and a hysteresis comparator U3, and the auxiliary power supply U1 is used to provide the DC supply voltage required for the work of the drive circuit U2 and the hysteresis comparator U3, Step-up or step-down conversion processing is performed on the DC input voltage Vi; the input terminal of the drive circuit U2 is connected to the output terminal of the hysteresis comparator U3, the output terminal of the drive circuit U2 is connected to the gate of the N-type MOSFET M1, and the drive circuit U2 provides drive for the turn-on and turn-off of N-type MOSFET M1; the input terminal of hysteresis comparator U3 is connected to one end of capacitor C1, resistor R1, resistor R2 and resistor R3, and the other end of capacitor C1 and resistor R3 is connected to a DC voltage source The negative end of Vi is connected, the other end of resistor R1 is connected to the cathode of diode D1, the other end of resistor R2 is connected to the anode of diode D2, the anode of diode D1 and the cathode of diode D2 are connected to the source of N-type MOSFET M1. 2.如权利要求1所述基于MOSFET的自激式Zeta变换器,其特征在于:所述基于MOSFET的自激式Zeta变换器还包括过流保护支路,所述过流保护支路包括电阻R6、电容C2、NPN型BJT Q2和PNP型BJT Q1,电阻R6的一端与电感L1和电阻R5的接点相连,电阻R6的另一端与电容C2的一端以及NPN型BJT Q2的基极相连,电容C2的另一端与NPN型BJT Q2的发射极以及直流电压源Vi的负端相连,NPN型BJT Q2的集电极与PNP型BJT Q1的基极相连,PNP型BJT Q1的发射极与N型MOSFET M1的源极相连,PNP型BJT Q1的集电极与滞环比较器U3的输入端相连。2. The self-excited Zeta converter based on MOSFET as claimed in claim 1 is characterized in that: the self-excited Zeta converter based on MOSFET also includes an overcurrent protection branch, and the overcurrent protection branch includes a resistor R6, capacitor C2, NPN type BJT Q2 and PNP type BJT Q1, one end of resistor R6 is connected to the junction of inductor L1 and resistor R5, the other end of resistor R6 is connected to one end of capacitor C2 and the base of NPN type BJT Q2, and the capacitor The other end of C2 is connected to the emitter of the NPN BJT Q2 and the negative terminal of the DC voltage source Vi, the collector of the NPN BJT Q2 is connected to the base of the PNP BJT Q1, and the emitter of the PNP BJT Q1 is connected to the N-type MOSFET The source of M1 is connected, and the collector of PNP type BJT Q1 is connected with the input terminal of hysteresis comparator U3. 3.如权利要求1所述基于MOSFET的自激式Zeta变换器,其特征在于:所述基于MOSFET的自激式Zeta变换器还包括电压反馈支路,所述电压反馈支路包括电阻R7、电容C3、电阻R8、NPN型BJT Q3、电阻R4和PNP型BJT Q1,电阻R7和电容C3组成并联支路,所述并联支路的一端与直流输出电压Vo的正端相连,所述并联支路的另一端与电阻R8的一端以及NPN型BJT Q3的基极相连,NPN型BJT Q3的发射极与电阻R8的另一端以及直流电压源Vi的负端相连,NPN型BJT Q3的集电极通过电阻R4与PNP型BJT Q1的基极相连,PNP型BJT Q1的发射极与N型MOSFET M1的源极相连,PNP型BJT Q1的集电极与滞环比较器U3的输入端相连。3. The self-excited Zeta converter based on MOSFET as claimed in claim 1 is characterized in that: the self-excited Zeta converter based on MOSFET also includes a voltage feedback branch, and the voltage feedback branch includes resistor R7, Capacitor C3, resistor R8, NPN type BJT Q3, resistor R4, PNP type BJT Q1, resistor R7 and capacitor C3 form a parallel branch, one end of the parallel branch is connected to the positive end of the DC output voltage Vo, and the parallel branch The other end of the circuit is connected to one end of the resistor R8 and the base of the NPN BJT Q3, the emitter of the NPN BJT Q3 is connected to the other end of the resistor R8 and the negative end of the DC voltage source Vi, and the collector of the NPN BJT Q3 passes through The resistor R4 is connected to the base of the PNP BJT Q1, the emitter of the PNP BJT Q1 is connected to the source of the N-type MOSFET M1, and the collector of the PNP BJT Q1 is connected to the input terminal of the hysteresis comparator U3. 4.如权利要求1所述基于MOSFET的自激式Zeta变换器,其特征在于:所述基于MOSFET的自激式Zeta变换器还包括电流反馈支路,所述电流反馈支路包括检测电阻R9、电压放大器U4、电阻R7、电容C3、电阻R8、NPN型BJT Q3、电阻R4和PNP型BJT Q1,检测电阻R9与负载Ro组成串联支路,所述串联支路与输出电容Co并联,检测电阻R9的一端与直流电压源Vi的负端相连,检测电阻R9的另一端与负载Ro的一端以及电压放大器U4的输入端相连,电阻R7和电容C3组成并联支路,所述并联支路的一端与电压放大器U4的输出端相连,所述并联支路的另一端与电阻R8的一端以及NPN型BJT Q3的基极相连,NPN型BJT Q3的发射极与电阻R8的另一端以及直流电压源Vi的负端相连,NPN型BJT Q3的集电极通过电阻R4与PNP型BJT Q1的基极相连,PNP型BJT Q1的发射极与N型MOSFET M1的源极相连,PNP型BJT Q1的集电极与滞环比较器U3的输入端相连。4. The self-excited Zeta converter based on MOSFET as claimed in claim 1, characterized in that: the self-excited Zeta converter based on MOSFET also includes a current feedback branch, and the current feedback branch includes a detection resistor R9 , voltage amplifier U4, resistor R7, capacitor C3, resistor R8, NPN type BJT Q3, resistor R4 and PNP type BJT Q1, the detection resistor R9 and the load Ro form a series branch, and the series branch is connected in parallel with the output capacitor Co to detect One end of the resistor R9 is connected to the negative end of the DC voltage source Vi, the other end of the detection resistor R9 is connected to one end of the load Ro and the input end of the voltage amplifier U4, the resistor R7 and the capacitor C3 form a parallel branch, and the parallel branch One end is connected to the output end of the voltage amplifier U4, the other end of the parallel branch is connected to one end of the resistor R8 and the base of the NPN BJT Q3, and the emitter of the NPN BJT Q3 is connected to the other end of the resistor R8 and the DC voltage source The negative terminal of Vi is connected, the collector of NPN BJT Q3 is connected to the base of PNP BJT Q1 through resistor R4, the emitter of PNP BJT Q1 is connected to the source of N-type MOSFET M1, and the collector of PNP BJT Q1 It is connected with the input end of hysteresis comparator U3. 5.如权利要求2所述基于MOSFET的自激式Zeta变换器,其特征在于:所述基于MOSFET的自激式Zeta变换器还包括电压反馈支路,所述电压反馈支路包括电阻R7、电容C3、电阻R8、NPN型BJT Q3和电阻R4,电阻R7和电容C3组成并联支路,所述并联支路的一端与直流输出电压Vo的正端相连,所述并联支路的另一端与电阻R8的一端以及NPN型BJT Q3的基极相连,NPN型BJT Q3的发射极与电阻R8的另一端以及直流电压源Vi的负端相连,NPN型BJT Q3的集电极通过电阻R4与PNP型BJT Q1的基极相连。5. The self-excited Zeta converter based on MOSFET as claimed in claim 2 is characterized in that: the self-excited Zeta converter based on MOSFET also includes a voltage feedback branch, and the voltage feedback branch includes resistor R7, Capacitor C3, resistor R8, NPN type BJT Q3 and resistor R4, resistor R7 and capacitor C3 form a parallel branch, one end of the parallel branch is connected to the positive end of the DC output voltage Vo, and the other end of the parallel branch is connected to One end of the resistor R8 is connected to the base of the NPN type BJT Q3, the emitter of the NPN type BJT Q3 is connected to the other end of the resistor R8 and the negative end of the DC voltage source Vi, and the collector of the NPN type BJT Q3 is connected to the PNP type via the resistor R4. The base of BJT Q1 is connected. 6.如权利要求2所述基于MOSFET的自激式Zeta变换器,其特征在于:所述基于MOSFET的自激式Zeta变换器还包括电流反馈支路,所述电流反馈支路包括检测电阻R9、电压放大器U4、电阻R7、电容C3、电阻R8、NPN型BJT Q3和电阻R4,检测电阻R9与负载Ro组成串联支路,所述串联支路与输出电容Co并联,检测电阻R9的一端与直流电压源Vi的负端相连,检测电阻R9的另一端与负载Ro的一端以及电压放大器U4的输入端相连,电阻R7和电容C3组成并联支路,所述并联支路的一端与电压放大器U4的输出端相连,所述并联支路的另一端与电阻R8的一端以及NPN型BJT Q3的基极相连,NPN型BJT Q3的发射极与电阻R8的另一端以及直流电压源Vi的负端相连,NPN型BJT Q3的集电极通过电阻R4与PNP型BJT Q1的基极相连。6. The self-excited Zeta converter based on MOSFET as claimed in claim 2 is characterized in that: the self-excited Zeta converter based on MOSFET also includes a current feedback branch, and the current feedback branch includes a detection resistor R9 , voltage amplifier U4, resistor R7, capacitor C3, resistor R8, NPN type BJT Q3 and resistor R4, detection resistor R9 and load Ro form a series branch, the series branch is connected in parallel with the output capacitor Co, one end of the detection resistor R9 is connected to The negative end of the DC voltage source Vi is connected, the other end of the detection resistor R9 is connected to one end of the load Ro and the input end of the voltage amplifier U4, the resistor R7 and the capacitor C3 form a parallel branch, and one end of the parallel branch is connected to the voltage amplifier U4 The other end of the parallel branch is connected to one end of the resistor R8 and the base of the NPN BJT Q3, and the emitter of the NPN BJT Q3 is connected to the other end of the resistor R8 and the negative end of the DC voltage source Vi , the collector of the NPN type BJT Q3 is connected to the base of the PNP type BJT Q1 through the resistor R4.
CN201110374592.XA 2011-11-22 2011-11-22 MOSFET-based auto-excitation type Zeta converter Active CN102510217B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110374592.XA CN102510217B (en) 2011-11-22 2011-11-22 MOSFET-based auto-excitation type Zeta converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110374592.XA CN102510217B (en) 2011-11-22 2011-11-22 MOSFET-based auto-excitation type Zeta converter

Publications (2)

Publication Number Publication Date
CN102510217A true CN102510217A (en) 2012-06-20
CN102510217B CN102510217B (en) 2014-06-11

Family

ID=46222275

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110374592.XA Active CN102510217B (en) 2011-11-22 2011-11-22 MOSFET-based auto-excitation type Zeta converter

Country Status (1)

Country Link
CN (1) CN102510217B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103986325A (en) * 2014-06-06 2014-08-13 哈尔滨工业大学 Dual Bootstrap Three-Level Zeta Converter
CN110739850A (en) * 2019-09-24 2020-01-31 浙江日风电气股份有限公司 PNP BJT Combination Capacitor Charge and Discharge Controller with Wide Operating Voltage Range

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0993911A (en) * 1995-09-28 1997-04-04 Nec Kansai Ltd Dc-dc converter power source
JPH09322563A (en) * 1996-05-24 1997-12-12 Matsushita Electric Ind Co Ltd High voltage generator
CN101877533A (en) * 2010-06-28 2010-11-03 浙江工业大学 Bipolar Transistor Type Self-Excited Zeta Converter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0993911A (en) * 1995-09-28 1997-04-04 Nec Kansai Ltd Dc-dc converter power source
JPH09322563A (en) * 1996-05-24 1997-12-12 Matsushita Electric Ind Co Ltd High voltage generator
CN101877533A (en) * 2010-06-28 2010-11-03 浙江工业大学 Bipolar Transistor Type Self-Excited Zeta Converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103986325A (en) * 2014-06-06 2014-08-13 哈尔滨工业大学 Dual Bootstrap Three-Level Zeta Converter
CN103986325B (en) * 2014-06-06 2016-06-01 哈尔滨工业大学 Dual bootstrap three level Zeta umformer
CN110739850A (en) * 2019-09-24 2020-01-31 浙江日风电气股份有限公司 PNP BJT Combination Capacitor Charge and Discharge Controller with Wide Operating Voltage Range

Also Published As

Publication number Publication date
CN102510217B (en) 2014-06-11

Similar Documents

Publication Publication Date Title
CN101877532B (en) Bipolar transistor auto-excitation type Buck convertor
US20150097507A1 (en) Motor driving apparatus
CN102403895B (en) Self-excitation Sepic converter based on MOSFET
CN101877535B (en) Bipolar transistor self-exciting Buck-Boost converter
CN101877534B (en) Bipolar transistor self-exciting Sepic converter
CN102820780B (en) Bipolar junction transistor (BJT) auto-excitation type Zeta convertor with low main switch tube drive loss
CN102403896A (en) Self excited Boost converter based on MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
CN102820784B (en) BJT (bipolar junction transistor)-type auto-excitation Buck converter with small main switching tube driving loss
CN202679243U (en) BJT type self-excited Buck converter with small main switch tube driving loss
CN102510216B (en) MOSFET-based auto-excitation type Cuk converter
CN101877533B (en) Bipolar transistor self-exciting Zeta converter
CN101877536B (en) Bipolar transistor self-exciting Cuk converter
CN102522890B (en) Auto-excitation type Buck-Boost converter based on MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
CN110535340B (en) A wide-input step-down circuit and device with variable structure
CN102522892B (en) Auto-excitation-type Buck converter based on metal oxide semiconductor field effect transistor (MOSFET)
CN104092370B (en) A kind of self-excited type Boost circuit
CN102684493B (en) BJT type self-excited Boost converter equipped with main switching tube with low drive loss
CN102510217A (en) MOSFET-based auto-excitation type Zeta converter
CN103441672B (en) A kind of self-excitation BUCK circuit based on auxiliary winding type sample circuit
CN201733223U (en) Bipolar transistor self-excitation type Buck converter
CN102769380B (en) BJT (Bipolar Junction Transistor) type auto-excitation Buck-Boost converter with little loss driven by main switching tube
CN202617003U (en) BJT type self-excited Boost converter with small driving loss of main switching tube
CN102710132B (en) Feedback type bipolar junction transistor (BJT) self-exciting Boost converter
CN102684487B (en) BJT type self-excited Sepic converter equipped with main switching tube with low drive loss
CN102723866B (en) BJT-typed self-exciting Cuk converter provided with main switching transistor having small driving loss

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201130

Address after: No.33 Hengyang South Road, Jinhu County, Huaian City, Jiangsu Province 211600

Patentee after: Jinhu agricultural and sideline products Marketing Association

Address before: Hangzhou City, Zhejiang province 310014 City Zhaohui District Six

Patentee before: ZHEJIANG University OF TECHNOLOGY