CN102400231A - Center shaft material-stopping hood structure in single crystal furnace thermal field - Google Patents
Center shaft material-stopping hood structure in single crystal furnace thermal field Download PDFInfo
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- CN102400231A CN102400231A CN2011103606081A CN201110360608A CN102400231A CN 102400231 A CN102400231 A CN 102400231A CN 2011103606081 A CN2011103606081 A CN 2011103606081A CN 201110360608 A CN201110360608 A CN 201110360608A CN 102400231 A CN102400231 A CN 102400231A
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- center shaft
- single crystal
- stopping
- thermal field
- crystal furnace
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Abstract
The invention discloses a center shaft material-stopping hood structure in a single crystal furnace thermal field, belonging to the field of smelting mechanical and electrical technologies and particularly relating to a center shaft material-stopping hold structure capable of stopping leaked liquid from leaking along a center shaft in the single crystal furnace thermal field. The center shaft material-stopping hood structure in the single crystal furnace thermal field contains a silicon solution and is composed of the center shaft, a center shaft material-stopping hood and a furnace bottom protecting tray; the center shaft material-stopping hood is rotationally arranged on the center shaft; and the lower end of the center shaft is connected with equipment, and the furnace bottom protecting tray is a graphite member and is arranged on equipment. The center shaft material-stopping hood structure in the single crystal furnace thermal field has the beneficial effects of preventing the silicon solution from leaking out along the center shaft during operation to damage equipment, reducing damages of the single crystal furnace, lowering the production cost and increasing operation efficiency.
Description
Technical field:
Thermal field of single crystal furnace axis material retaining hood structure belongs to the mechanical & electrical technology field that smelts; Be particularly related to the axis material retaining hood structure that thermal field of single crystal furnace stops that leakage is leaked along axis.
Background technology:
Single crystal growing furnace is that polysilicon is converted into the indispensable equipment in the silicon single crystal technological process, and silicon single crystal is the basic material in photovoltaic generation and the semicon industry.Silicon single crystal is as the critical support material of advanced information society, is one of most important monocrystal material in the world at present, and it is not only the major function material of development computingmachine and unicircuit, also is the major function material that photovoltaic generation utilizes sun power.Thermal field of single crystal furnace leaks the silicon liquid that comes out and flows on the equipment along axis in the silicon single-crystal pulling process, damage equipment, and existing thermal field of single crystal furnace does not adopt the axis material retaining hood, causes phenomenons such as SF is low, structure deteriorate easily.
The content of invention:
Thermal field of single crystal furnace axis material retaining hood structure goal of the invention of the present invention is: manufacture and design a kind of different with prior art, promptly stop leakage along axis leak dismantle again easy to use, the axis material retaining hood structure of being convenient to change.
Thermal field of single crystal furnace axis material retaining hood structure of the present invention is achieved in that siliceous liquid, is made up of axis, axis material retaining hood and furnace bottom protection plate; Axis material retaining hood spinning is on axis; The lower end of axis is connected with equipment, and the furnace bottom protection plate is a graphite piece, and it is installed on the equipment.
In the silicon single-crystal operation process, the silicon liquid that leakage is come out flows on the furnace bottom protection plate under the effect of axis material retaining hood, and silicon liquid can not flow on the equipment damage equipment along axis.
The beneficial effect of thermal field of single crystal furnace axis material retaining hood structure of the present invention is: silicon liquid spills damage equipment along axis when utilizing thermal field axis material retaining hood structure to prevent operation, reduces single crystal growing furnace and damages, and reduces production costs, and improves operating efficiency.
Description of drawings:
Accompanying drawing is a thermal field of single crystal furnace axis material retaining hood structural representation.
Among the figure: silicon liquid 1, axis 2, axis material retaining hood 3, furnace bottom protection plate 4.
Embodiment:
The siliceous liquid 1 of thermal field of single crystal furnace axis material retaining hood structure of the present invention is by axis 2, axis material retaining hood 3 and furnace bottom protection plate 4; Axis material retaining hood 3 spinnings are on axis 2; The lower end of axis 2 is connected with equipment, and furnace bottom protection plate 4 is graphite piece, and it is installed on the equipment.
Claims (2)
1. thermal field of single crystal furnace axis material retaining hood structure is characterized in that: siliceous liquid (1), form by axis (2), axis material retaining hood (3) and furnace bottom protection plate (4); Axis material retaining hood (3) is spun on the axis (2); The lower end of axis (2) is connected with equipment.
2. according to the said thermal field of single crystal furnace axis of claim 1 material retaining hood structure, it is characterized in that: furnace bottom protection plate (4) is a graphite piece, and it is installed on the equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103606081A CN102400231A (en) | 2011-11-15 | 2011-11-15 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103606081A CN102400231A (en) | 2011-11-15 | 2011-11-15 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102400231A true CN102400231A (en) | 2012-04-04 |
Family
ID=45882851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103606081A Pending CN102400231A (en) | 2011-11-15 | 2011-11-15 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102400231A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09221385A (en) * | 1996-02-13 | 1997-08-26 | Sumitomo Sitix Corp | Device for pulling up single crystal |
| JPH10182288A (en) * | 1996-12-26 | 1998-07-07 | Ibiden Co Ltd | Receiving tray made of carbon for apparatus for pulling silicon single crystal |
| US6605152B2 (en) * | 2000-03-03 | 2003-08-12 | Shin-Etsu Handotai Co., Ltd. | Catch pan for melt leakage in apparatus for pulling single crystal |
| US20040255847A1 (en) * | 2003-06-19 | 2004-12-23 | Memc Electronic Materials, Inc. | Fluid sealing system for a crystal puller |
| CN201351184Y (en) * | 2008-12-29 | 2009-11-25 | 嘉兴嘉晶电子有限公司 | Anti-burnout graphite unit for single-crystal furnace |
| WO2010027833A1 (en) * | 2008-08-27 | 2010-03-11 | Bp Corporation North America Inc. | System and method for liquid silicon containment |
| CN102220630A (en) * | 2011-06-03 | 2011-10-19 | 奥特斯维能源（太仓）有限公司 | Mono-crystal furnace capable of protecting against silicon leakage |
| CN202390584U (en) * | 2011-11-15 | 2012-08-22 | 宁夏日晶新能源装备股份有限公司 | Center shaft baffle cover structure used in single crystal furnace thermal field |
-
2011
- 2011-11-15 CN CN2011103606081A patent/CN102400231A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09221385A (en) * | 1996-02-13 | 1997-08-26 | Sumitomo Sitix Corp | Device for pulling up single crystal |
| JPH10182288A (en) * | 1996-12-26 | 1998-07-07 | Ibiden Co Ltd | Receiving tray made of carbon for apparatus for pulling silicon single crystal |
| US6605152B2 (en) * | 2000-03-03 | 2003-08-12 | Shin-Etsu Handotai Co., Ltd. | Catch pan for melt leakage in apparatus for pulling single crystal |
| US20040255847A1 (en) * | 2003-06-19 | 2004-12-23 | Memc Electronic Materials, Inc. | Fluid sealing system for a crystal puller |
| WO2010027833A1 (en) * | 2008-08-27 | 2010-03-11 | Bp Corporation North America Inc. | System and method for liquid silicon containment |
| CN201351184Y (en) * | 2008-12-29 | 2009-11-25 | 嘉兴嘉晶电子有限公司 | Anti-burnout graphite unit for single-crystal furnace |
| CN102220630A (en) * | 2011-06-03 | 2011-10-19 | 奥特斯维能源（太仓）有限公司 | Mono-crystal furnace capable of protecting against silicon leakage |
| CN202390584U (en) * | 2011-11-15 | 2012-08-22 | 宁夏日晶新能源装备股份有限公司 | Center shaft baffle cover structure used in single crystal furnace thermal field |
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| PB01 | Publication | ||
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120404 |