CN102220630A - Mono-crystal furnace capable of protecting against silicon leakage - Google Patents
Mono-crystal furnace capable of protecting against silicon leakage Download PDFInfo
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- CN102220630A CN102220630A CN 201110148230 CN201110148230A CN102220630A CN 102220630 A CN102220630 A CN 102220630A CN 201110148230 CN201110148230 CN 201110148230 CN 201110148230 A CN201110148230 A CN 201110148230A CN 102220630 A CN102220630 A CN 102220630A
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Abstract
The invention discloses a mono-crystal furnace capable of protecting against silicon leakage, which comprises a heat-insulating bottom plate, a crucible shaft, a heater, a silicon liquid diversion device and a heater protective cover, wherein the silicon liquid diversion device is arranged and fixed on the crucible shaft; and the heater protective cover completely covers the bottom of the heater and is attached to the leg of the heater tightly. In the mono-crystal furnace, due to the adoption of the silicon liquid diversion device, the heater protective cover and the heat-insulating bottom plate with bulges, leaked silicon liquid can be collected in the heat-insulating bottom plate to a maximum degree, the loss of silicon materials is reduced, and expensive parts such as the heater, a corrugated pipe and the like are protected against the destruction of the silicon liquid effectively to reduce the loss.
Description
Technical field
The present invention relates to the photovoltaic industry, be specially the single crystal growing furnace that a kind of single crystal growing can play protective effect when taking place to leak the silicon accident to inner graphite piece and body of heater.
Background technology
General single crystal growing furnace growing system mainly is made up of monocrystalline body of heater and thermal field system.The monocrystalline body of heater is the main growth apparatus of manufacture order crystal silicon, the hot system of czochralski crystal growing furnace, just so-called thermal field, be meant for the melted silicon material, and make single crystal growing keep the total system (as Fig. 1) carry out at a certain temperature, mainly comprise heat-insulation system (go up insulation cover 1, down insulation cover 2, go up heat-preservation cylinder 3, middle heat-preservation cylinder 4, heat-preservation cylinder 5, guide shell 12, insulation base plate 6 etc. down), heat-generating system (mainly containing graphite heater 8 etc.), support transmission system (crucible shaft 7, pallet 9, plumbago crucible 10, quartz crucible 11 etc.).
In single crystal growth process, tend to cause leaking the generation of silicon accident because of a variety of causes, generally speaking, leaking silicon accident major cause is that the quartz crucible that holds raw material breaks, silicon liquid mainly flows to as shown in Figure 3 when taking place to leak the silicon accident, silicon liquid is gushed out from the quartz crucible rent and is flow to pallet, crucible shaft along the gap of plumbago crucible, can be in crucible shaft flows into the crucible shaft corrugated tube or on insulation base plate and the well heater when leakage silicon amount is big.The insulation base plate of tradition thermal field is planar graphite-structure (as Fig. 5, shown in Figure 6), is incubated the base plate center and has three holes of running through to be respectively applied for the placement of crucible shaft sheath and electrode sheath along the medullary ray zygomorphy.Between hole and each sheath certain slit is arranged, when flowing on the insulation base plate, silicon liquid can flow into the bottom of insulation base plate along this slit, thereby enter at the bottom of the single crystal growing furnace, pyritous silicon liquid can burn out furnace bottom and cause the recirculated water between the furnace bottom interlayer to spray, water is gasification rapidly under the pyritous environment, quickens the oxidation damage of graphite thermal field and body of heater, even the accident of blasting, damage graphite member and furnace part, cause great loss to production.
Present traditional thermal field is just done some and is improved for the minimizing of leaking the silicon accident, and the generation that when leaking the generation of silicon accident, can only leave to lose, and the size of leakage silicon loss often is unable to estimate.
Generally speaking, silicon liquid is gushed out from rent and is flow on pallet and the crucible shaft along the slit of plumbago crucible, and this just need seek a kind of device of protecting behind the silicon of leaking to reduce the loss.
Summary of the invention
Goal of the invention: in order to solve the problems of the prior art, the invention provides a kind ofly after take place leaking the silicon accident, can farthest reduce the single crystal growing furnace that furnace binding and graphite thermal field vitals damage.
Technical scheme: to achieve these goals, of the present inventionly a kind ofly can leak the single crystal growing furnace that protects behind the silicon, it comprises: insulation base plate, crucible shaft and well heater also comprise: silicon liquid guiding device, heater protective cover; Described silicon liquid guiding device is mounted on the crucible shaft; Described heater protective cover covers the bottom of well heater fully, and is close to the well heater shank, directly splashes on this protecting jacket when the silicon drop falls, and has stopped silicon liquid and has directly contacted adhesion with well heater.
Among the present invention; described insulation base plate is provided with hole; be provided with step around hole and around the outer of insulation base plate to upper process; the design of step flows into furnace bottom to prevent silicon liquid along the gap of hole and sheath; graphite thermal field and body of heater at the bottom of the single crystal growing furnace have been protected; simultaneously the silicon liquid that spills is farthest dripped and be collected in the insulation base plate, prevented the loss of silicon material.
The liquid of silicon described in the present invention guiding device is horn-like and hydraucone graphite sleeve down.The design of horn-like graphite sleeve makes silicon liquid gush out from the quartz crucible rent can directly not flow to furnace bottom downwards when the gap of plumbago crucible flows to crucible shaft, and blocked by graphite sleeve, change flow direction, and mobile along the outer wall of graphite sleeve, drop onto at last on the insulation base plate of graphite sleeve below.
The liquid of silicon described in the present invention guiding device is provided with internal thread, described crucible shaft be provided with silicon liquid guiding device on the outside screw that is complementary of internal thread; Silicon liquid guiding device and crucible shaft are fixed together by internal and external threads.Perhaps punching makes it to run through on crucible shaft, and silicon liquid guiding device is overlapped into from the crucible shaft bottom, and the roundlet stub of making of two carbon carbon materials inserts respectively in two apertures to support silicon liquid guiding device then.The distance that requires the roundlet stub to insert is that the thickness of crucible shaft gets final product, and preventing to insert influences crucible shaft CARBURIZING FURNACE FOR STAINLESS FASTENER passing through from the crucible shaft internal space deeply.
Single crystal growing furnace of the present invention can knock out taking-up with silicon liquid guiding device, heater protective cover after the silicon accident takes place leaking, and protects big parts with widget, effectively reduces the loss after the silicon accident Lou.
Beneficial effect: the present invention compared with prior art has following advantage:
(1) the present invention is by silicon liquid guiding device, heater protective cover and the utilization that is provided with the insulation base plate of projection step, the silicon liquid that spills is farthest dripped be collected in the insulation base plate, reduced the loss of silicon material, the destruction of simultaneously having protected price expensive component such as well heater and corrugated tube not to be subjected to silicon liquid has effectively been reduced loss;
(2) single crystal growing furnace processing of the present invention is simple, easy and simple to handle.
Description of drawings
Fig. 1 is the structural representation of single crystal growing furnace in the prior art.
Fig. 2 is the structural representation of single crystal growing furnace of the present invention.
Fig. 3 leaks the silicon flow graph after leaking silicon in the prior art.
Fig. 4 leaks the silicon flow graph after leaking silicon among the present invention.
Fig. 5 is the vertical view of insulation base plate in the prior art.
Fig. 6 is the sectional view of insulation base plate in the prior art.
Fig. 7 is the vertical view of insulation base plate among the present invention.
Fig. 8 is the sectional view of insulation base plate among the present invention.
Embodiment
Below in conjunction with specific embodiment, further illustrate the present invention, should understand these embodiment only is used to the present invention is described and is not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims to the modification of the various equivalent form of values of the present invention and limit.
Embodiment
A kind of shown in 2 can be leaked the single crystal growing furnace that protects behind the silicon, and it comprises: insulation base plate 6, crucible shaft 7, well heater 8, silicon liquid guiding device 15, heater protective cover 14; Described insulation base plate 6 is provided with hole, is provided with the step (as Fig. 7, Fig. 8) to upper process around hole and around the outer of insulation base plate; Described silicon liquid guiding device 15 is horn-like and hydraucone graphite sleeve down; Described silicon liquid guiding device 15 is mounted on the crucible shaft 7; Described heater protective cover 14 covers the bottom of well heater 8 fully, and is close to well heater 8 shanks; Described silicon liquid guiding device 15 is provided with internal thread, described crucible shaft 7 be provided with silicon liquid guiding device 15 on the outside screw that is complementary of internal thread; Silicon liquid guiding device 15 and crucible shaft 7 are fixed together by internal and external threads.
Single crystal growing furnace described in the present embodiment is after leaking the generation of silicon accident; silicon liquid is gushed out from rent and is flow on pallet and the crucible shaft along the slit of plumbago crucible; flow on silicon liquid guiding device 15 and the heater protective cover along crucible shaft; flow on the insulation base plate by silicon liquid guiding device 15 and heater protective cover; owing to having projection around the eyelet on the insulation base plate; silicon liquid can not flow into the bottom of insulation base plate from the hole on the insulation base plate; thereby enter at the bottom of the single crystal growing furnace, protected graphite thermal field and body of heater (as shown in Figure 4).
The contrast experiment
1, selects two JRDL9020 thermal fields as the experiment thermal field, be called thermal field one and thermal field two.
2, thermal field one as shown in Figure 1, thermal field two is as described in the present embodiment.
3, when thermal field one and thermal field two generation leakage silicon accidents, compare leaking silicon state and damaed cordition.
Find by contrast, when taking place to leak the silicon accident:
Silicon liquid is gushed out from rent and is flow on pallet and the crucible shaft along the slit of plumbago crucible in the thermal field one, simultaneously in crucible shaft flows into the crucible shaft corrugated tube, there are a large amount of silicon liquid to splash on insulation base plate and the well heater, well heater bolt and well heater pin are sticked together, lose more serious;
Silicon liquid major part accumulates on the insulation bottom plate in the thermal field two, silicon liquid covering heater protective cover outer surface, graphite collar bottom do not have silicon liquid and gather, and no silicon liquid leaks to corrugated tube, after the graphite collar and heater protective cover carefully knocked out, well heater bolt and well heater junction were intact.
The loss contrast:
Thermal field one damaed cordition is 1 of a quartz crucible, plumbago crucible one cover, one on pallet, one of crucible shaft, one of corrugated tube, one of insulation bottom plate, one of well heater, two on well heater bolt, two at electrode, the about 20kg of silicon material loss.
Thermal field two damaed corditions are: one of quartz crucible, plumbago crucible one cover, one on pallet, one of crucible shaft, one of insulation bottom plate, one of the graphite collar, two on heater protective cover, the about 5kg of silicon material loss.
To sum up, the described single crystal growing furnace of present embodiment can reduce the loss behind the leakage silicon, effectively important thermal field components such as the well heater of conservation value costliness, corrugated tube effectively.
Claims (5)
1. one kind can leak the single crystal growing furnace that protects behind the silicon, and it comprises: insulation base plate (6), crucible shaft (7) and well heater (8), and it is characterized in that: it also comprises: silicon liquid guiding device (15) and heater protective cover (14); Described silicon liquid guiding device (15) is mounted on the crucible shaft (7); Described heater protective cover (14) covers the bottom of well heater (8) fully, and is close to well heater (8) shank.
2. according to claim 1ly a kind ofly can leak the single crystal growing furnace that protects behind the silicon, it is characterized in that: described insulation base plate (6) is provided with hole, is provided with the step to upper process around hole and around the outer of insulation base plate.
3. according to claim 1ly a kind ofly can leak the single crystal growing furnace that protects behind the silicon, it is characterized in that: described silicon liquid guiding device (15) is horn-like and hydraucone graphite sleeve down.
4. according to claim 1ly a kind ofly can leak the single crystal growing furnace that protects behind the silicon, it is characterized in that: described silicon liquid guiding device (15) is provided with internal thread, and described crucible shaft (7) is provided with silicon liquid guiding device (15) and goes up the outside screw that internal thread is complementary; Silicon liquid guiding device (15) and crucible shaft (7) are fixed together by internal and external threads.
5. according to claim 1ly a kind ofly can leak the single crystal growing furnace that protects behind the silicon, it is characterized in that: the mode of connection of described silicon liquid guiding device and crucible shaft is: punching makes it to run through on crucible shaft, silicon liquid guiding device is overlapped into from the crucible shaft bottom, and the roundlet stub of making of two carbon carbon materials inserts respectively in two apertures to support silicon liquid guiding device then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110148230A CN102220630B (en) | 2011-06-03 | 2011-06-03 | Mono-crystal furnace capable of protecting against silicon leakage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110148230A CN102220630B (en) | 2011-06-03 | 2011-06-03 | Mono-crystal furnace capable of protecting against silicon leakage |
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| CN102220630A true CN102220630A (en) | 2011-10-19 |
| CN102220630B CN102220630B (en) | 2012-10-03 |
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| CN201110148230A Expired - Fee Related CN102220630B (en) | 2011-06-03 | 2011-06-03 | Mono-crystal furnace capable of protecting against silicon leakage |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400231A (en) * | 2011-11-15 | 2012-04-04 | 宁夏日晶新能源装备股份有限公司 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
| CN102492982A (en) * | 2011-12-13 | 2012-06-13 | 上海九晶电子材料股份有限公司 | Guide protector for high-temperature melt leak of singe crystal furnace |
| CN102703979A (en) * | 2012-04-28 | 2012-10-03 | 浙江上城科技有限公司 | Self-adaptive sapphire crystallization furnace |
| CN104364427A (en) * | 2012-06-04 | 2015-02-18 | 信越半导体股份有限公司 | Device for production of single crystal |
| CN105043098A (en) * | 2015-07-09 | 2015-11-11 | 佛山市技新电气有限公司 | Electric melting furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101624187A (en) * | 2009-07-22 | 2010-01-13 | 管悦 | Polysilicon growth ingot furnace |
| CN202116687U (en) * | 2011-06-03 | 2012-01-18 | 奥特斯维能源（太仓）有限公司 | Single crystal furnace capable of being protected after silicon leakage |
-
2011
- 2011-06-03 CN CN201110148230A patent/CN102220630B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101624187A (en) * | 2009-07-22 | 2010-01-13 | 管悦 | Polysilicon growth ingot furnace |
| CN202116687U (en) * | 2011-06-03 | 2012-01-18 | 奥特斯维能源（太仓）有限公司 | Single crystal furnace capable of being protected after silicon leakage |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400231A (en) * | 2011-11-15 | 2012-04-04 | 宁夏日晶新能源装备股份有限公司 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
| CN102492982A (en) * | 2011-12-13 | 2012-06-13 | 上海九晶电子材料股份有限公司 | Guide protector for high-temperature melt leak of singe crystal furnace |
| CN102703979A (en) * | 2012-04-28 | 2012-10-03 | 浙江上城科技有限公司 | Self-adaptive sapphire crystallization furnace |
| CN102703979B (en) * | 2012-04-28 | 2015-04-22 | 浙江上城科技有限公司 | Self-adaptive sapphire crystallization furnace |
| CN104364427A (en) * | 2012-06-04 | 2015-02-18 | 信越半导体股份有限公司 | Device for production of single crystal |
| CN104364427B (en) * | 2012-06-04 | 2017-03-01 | 信越半导体股份有限公司 | Single-crystal manufacturing apparatus |
| US9708729B2 (en) | 2012-06-04 | 2017-07-18 | Shin-Etsu Chemical Co., Ltd. | Apparatus for manufacturing single crystal |
| DE112013002345B4 (en) | 2012-06-04 | 2023-02-02 | Shin-Etsu Handotai Co., Ltd. | Apparatus for making a single crystal |
| CN105043098A (en) * | 2015-07-09 | 2015-11-11 | 佛山市技新电气有限公司 | Electric melting furnace |
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| Publication number | Publication date |
|---|---|
| CN102220630B (en) | 2012-10-03 |
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