JPH09221385A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPH09221385A JPH09221385A JP2502496A JP2502496A JPH09221385A JP H09221385 A JPH09221385 A JP H09221385A JP 2502496 A JP2502496 A JP 2502496A JP 2502496 A JP2502496 A JP 2502496A JP H09221385 A JPH09221385 A JP H09221385A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- crucible
- receiving tray
- chamber
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば半導体材料
として使用されるシリコン単結晶を成長させる単結晶引
き上げ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal pulling apparatus for growing a silicon single crystal used as a semiconductor material, for example.
【0002】[0002]
【従来の技術】単結晶を成長させるには種々の方法があ
るが、その一つにチョクラルスキー法(以下、CZ法と
記す)がある。図4は従来のCZ法に用いられる単結晶
引き上げ装置の要部を模式的に示した断面図であり、図
中31は坩堝を示している。2. Description of the Related Art There are various methods for growing a single crystal, one of which is the Czochralski method (hereinafter referred to as the CZ method). FIG. 4 is a cross-sectional view schematically showing a main part of a single crystal pulling apparatus used in a conventional CZ method, and 31 in the figure shows a crucible.
【0003】この坩堝31は、有底円筒形状の石英製の
内層保持容器31aと、この内層保持容器31aの外側
に嵌合された同じく有底円筒形状の黒鉛製の外層保持容
器31bとから構成されており、坩堝31は図中の矢印
方向に所定の速度で回転する支持軸39に支持されてい
る。この坩堝31の外側には抵抗加熱式のヒータ32、
及びヒータ32の外側には坩堝31への熱移動を促進す
る保温筒42が同心円状に配置されており、坩堝31内
にはこのヒータ32により溶融させられた単結晶用原料
の溶融液33が充填されるようになっている。The crucible 31 comprises a bottomed cylindrical quartz inner layer holding container 31a and a bottomed cylindrical graphite outer layer holding container 31b fitted to the outside of the inner layer holding container 31a. The crucible 31 is supported by a support shaft 39 that rotates at a predetermined speed in the direction of the arrow in the figure. Outside the crucible 31, a resistance heating type heater 32,
A heat insulating cylinder 42 that promotes heat transfer to the crucible 31 is concentrically arranged outside the heater 32. Inside the crucible 31, a melt 33 of the single crystal raw material melted by the heater 32 is provided. It is supposed to be filled.
【0004】坩堝31の中心軸上には引き上げ棒あるい
はワイヤー等からなる引き上げ軸34が吊設されてお
り、この引き上げ軸34の先にシードチャック34aを
介して取り付けられた種結晶35を溶融液33の表面に
接触させ、引き上げ軸34を支持軸39と同一軸心で同
方向または逆方向に所定の速度で回転させながら引き上
げることにより、溶融液33を凝固させて単結晶36を
成長させるようになっている。A pulling shaft 34 made of a pulling rod or a wire is hung on the central axis of the crucible 31, and a seed crystal 35 attached to the tip of the pulling shaft 34 via a seed chuck 34a is melted. 33 is brought into contact with the surface of 33, and the pulling shaft 34 is pulled while rotating the pulling shaft 34 in the same axis as the supporting shaft 39 in the same direction or in the opposite direction at a predetermined speed, thereby solidifying the melt 33 and growing the single crystal 36. It has become.
【0005】[0005]
【発明が解決しようとする課題】上記した単結晶引き上
げ装置3における、石英製の内層保持容器31a及び黒
鉛製の外層保持容器31bは高い耐熱性を有しているも
のの、比較的脆く、耐衝撃性に乏しい。よってチャージ
時に多結晶原料を坩堝31内に投入すると、その衝撃に
よって坩堝31に亀裂が生じる場合があり、この場合に
は高温の溶融原料(溶融液)33が前記亀裂部分から坩
堝31外へ流出する虞がある。また、多結晶原料投入時
に、坩堝31内の溶融原料33が坩堝31の周囲に飛散
することも知られている。さらに、単結晶36の引き上
げ途中において単結晶36が落下した場合は、坩堝31
が破壊されて溶融原料33の全量が流出してしまうこと
もある。The inner layer holding container 31a made of quartz and the outer layer holding container 31b made of graphite in the single crystal pulling apparatus 3 described above have high heat resistance, but are relatively fragile and shock resistant. Poor sex. Therefore, if a polycrystalline raw material is charged into the crucible 31 during charging, the impact may cause a crack in the crucible 31. In this case, the high-temperature molten raw material (melt liquid) 33 flows out of the crucible 31 from the cracked portion. There is a risk of It is also known that the molten raw material 33 in the crucible 31 is scattered around the crucible 31 when the polycrystalline raw material is charged. Further, if the single crystal 36 falls during the pulling of the single crystal 36, the crucible 31
May be destroyed and the entire amount of the molten raw material 33 may flow out.
【0006】このように高温の溶融原料33が坩堝31
外へ流出、又は飛散すると、その溶融原料33は坩堝外
周壁31cからチャンバ下部(図示せず)に至って、チ
ャンバ底部、ヒータ通電用電極(いずれも図示せず)、
支持軸39等の金属部を浸食し、さらに坩堝31の駆動
装置や冷却水配管(以下、これらを併せて下部機構と記
す)を浸食する。特に高温のシリコンは金属に対する浸
食作用が激しいため、前記冷却水配管の金属部が浸食さ
れると冷却水が蒸発してチャンバ内が高圧の蒸気で満た
され、水蒸気爆発を起こすという危険性もある。As described above, the high temperature molten raw material 33 is the crucible 31.
When the molten raw material 33 flows out or scatters outside, the molten raw material 33 reaches the chamber lower portion (not shown) from the crucible outer peripheral wall 31c, the chamber bottom portion, heater energizing electrode (neither is shown),
The metal portion such as the support shaft 39 is eroded, and further, the drive device of the crucible 31 and the cooling water pipe (hereinafter collectively referred to as a lower mechanism) are eroded. In particular, high-temperature silicon has a strong erosion effect on metals, so if the metal part of the cooling water pipe is eroded, the cooling water evaporates and the chamber is filled with high-pressure steam, which may cause a steam explosion. .
【0007】これに対し特開平2−225393号公報
においては、湯漏れ防止構造が採られた単結晶引き上げ
装置が提案されている。しかしながら前記湯漏れ防止構
造においては、湯漏れ防止のための部材間から溶融原料
がなお漏れる虞があり、また、その内容積が全溶融原料
の容積よりも小さいために前記溶融原料が床面へ溢れ出
す危険性があるといった課題があった。On the other hand, Japanese Unexamined Patent Publication No. 2-225393 proposes a single crystal pulling apparatus having a structure for preventing molten metal leakage. However, in the structure for preventing molten metal leakage, there is a possibility that the molten raw material may still leak between members for preventing molten metal leakage, and since the internal volume of the molten raw material is smaller than the volume of the total molten raw material, the molten raw material may reach the floor surface. There was a problem that there was a risk of overflowing.
【0008】また、特開平5−270967号公報にお
いては、前記溶融原料が流出した場合に全溶融原料を浸
透させ得る浸透部材が設けられた単結晶引き上げ装置が
提案されている。しかしながら、前記単結晶引き上げ装
置にあっては、前記浸透部材が吸収しきれずに溶融原料
が溢れ出すという危険性はないものの、流出した溶融原
料を吸収した浸透部材を保持する底板と被覆板との間か
らやはり溶融原料が漏れる危険性は残されていた。Further, Japanese Patent Laid-Open No. 5-270967 proposes a single crystal pulling apparatus provided with a permeation member capable of permeating all the molten raw material when the molten raw material flows out. However, in the single crystal pulling apparatus, although there is no risk of the molten raw material overflowing without being absorbed by the permeating member, the bottom plate and the cover plate for holding the permeating member absorbing the melted raw material that has flowed out There was still a risk that the molten raw material would leak from the gap.
【0009】本発明は上記課題に鑑みなされたものであ
って、溶融原料が坩堝外へ流出した場合であっても、該
流出した溶融原料が坩堝下部機構に達することを確実に
防止し、冷却水の蒸発による水蒸気爆発や、流出した溶
融原料が床面に溢れ出して作業員に危険を及ぼすこと等
を確実に防止することができる単結晶引き上げ装置を提
供することを目的としている。The present invention has been made in view of the above-mentioned problems, and even when the molten raw material flows out of the crucible, the molten raw material that has flowed out is surely prevented from reaching the crucible lower mechanism, and cooling is performed. It is an object of the present invention to provide a single crystal pulling apparatus capable of reliably preventing a steam explosion due to water evaporation and a leaked molten raw material overflowing to the floor surface and causing a danger to workers.
【0010】[0010]
【課題を解決するための手段及びその効果】上記目的を
達成するために本発明に係る単結晶引き上げ装置は、チ
ャンバの底部に湯漏れ受皿が配設され、該湯漏れ受皿が
一体成形により形成されると共に、全溶融原料を収容し
得る内容積を有していることを特徴としている(1)。In order to achieve the above object, a single crystal pulling apparatus according to the present invention is provided with a molten metal leak receiving tray at the bottom of a chamber, and the molten metal leak receiving tray is formed by integral molding. In addition, it is characterized by having an internal volume capable of accommodating all the molten raw materials (1).
【0011】上記単結晶引き上げ装置(1)によれば、
溶融原料が坩堝外へ流出した場合であっても、前記湯漏
れ受皿によって、流出した前記溶融原料を収容すること
ができる。しかも前記湯漏れ受皿は一体成形により形成
されているため、収容された前記溶融原料が他部へ流れ
出す危険性はない。また、前記湯漏れ受皿は全溶融原料
を収容し得る内容積を有しているため、収容された前記
溶融原料が前記湯漏れ受皿から溢れ出す危険性はない。
よって、前記溶融原料が坩堝下部機構に達することを確
実に防止し、冷却水の蒸発による水蒸気爆発や、流出し
た溶融原料が床面に溢れ出して作業員に危険を及ぼすこ
と等を確実に防止することができる。According to the above single crystal pulling apparatus (1),
Even when the molten raw material flows out of the crucible, the molten metal leak tray can contain the molten raw material that has flowed out. Moreover, since the molten metal leak receiving tray is formed by integral molding, there is no risk that the contained molten raw material will flow out to other parts. Further, since the molten metal leak receiving tray has an internal volume capable of accommodating all the molten raw materials, there is no risk that the stored molten raw material overflows from the molten metal leak receiving tray.
Therefore, it is possible to reliably prevent the molten raw material from reaching the crucible lower mechanism, and to prevent a steam explosion due to the evaporation of cooling water and the overflowed molten raw material from overflowing to the floor and causing a danger to workers. can do.
【0012】また、本発明に係る単結晶引き上げ装置
は、チャンバの底部に配設された湯漏れ受皿の内表面が
窒化ボロンで被覆されていることを特徴としている
(2)。Further, the apparatus for pulling a single crystal according to the present invention is characterized in that the inner surface of the molten metal leak pan provided at the bottom of the chamber is coated with boron nitride (2).
【0013】上記単結晶引き上げ装置(2)によれば、
前記湯漏れ受皿の内表面が窒化ボロンで被覆されてお
り、窒化ボロンは溶融シリコンとの反応性に乏しく、且
つ濡れ性に乏しいため、溶融シリコンが凝固した時に発
生する応力を容易に逃がすことができる。従って、前記
湯漏れ受皿の耐久性を高めることができる。According to the above single crystal pulling apparatus (2),
The inner surface of the molten metal leak receiving tray is coated with boron nitride, and since boron nitride has poor reactivity with molten silicon and poor wettability, stress generated when the molten silicon solidifies can be easily released. it can. Therefore, the durability of the hot water leak receiving tray can be improved.
【0014】[0014]
【発明の実施の形態】以下、本発明に係る単結晶引き上
げ装置の実施の形態を図面に基づいて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a single crystal pulling apparatus according to the present invention will be described below with reference to the drawings.
【0015】<実施の形態1>図1(a)は本発明の実
施の形態に係る単結晶引き上げ装置を示した模式的断面
図であり、(b)は要部の模式的部分平面図である。ま
た、図2(a)、(b)は実施の形態における湯漏れ受
皿を示した模式的斜視図である。なお、従来例と同一の
機能を有する構成部品には同一の符号を付してある。<Embodiment 1> FIG. 1A is a schematic sectional view showing a single crystal pulling apparatus according to an embodiment of the present invention, and FIG. 1B is a schematic partial plan view of an essential part. is there. 2 (a) and 2 (b) are schematic perspective views showing the hot water leak receiving tray in the embodiment. Note that components having the same functions as those of the conventional example are denoted by the same reference numerals.
【0016】図中13はチャンバを示しており、チャン
バ13内には坩堝31が配置され、坩堝31は図中の矢
印方向に所定の速度で回転する支持軸39に支持されて
いる。支持軸39の下端部は坩堝31の駆動機構(図示
せず)に連結されており、支持軸39はチャンバ底部外
壁面13aに取り付けられた真空保持用のベローズ17
内を貫通している。坩堝31の外側にはヒータ32が、
ヒータ32の外側には保温筒42が同心円状に配置され
ていて、ヒータ32の下部には金属性のヒータ通電用電
極14が取り付けられている。また、坩堝31内にはこ
のヒータ32により溶融させられた溶融原料33が充填
されるようになっている。Reference numeral 13 in the drawing denotes a chamber, and a crucible 31 is arranged in the chamber 13, and the crucible 31 is supported by a support shaft 39 which rotates at a predetermined speed in the direction of the arrow in the drawing. The lower end of the support shaft 39 is connected to a drive mechanism (not shown) for the crucible 31, and the support shaft 39 is a bellows 17 for holding vacuum which is attached to the chamber bottom outer wall surface 13a.
Penetrates inside. A heater 32 is provided outside the crucible 31,
A heat retaining tube 42 is concentrically arranged outside the heater 32, and a metallic heater energizing electrode 14 is attached to the lower portion of the heater 32. Further, the crucible 31 is filled with the molten raw material 33 melted by the heater 32.
【0017】チャンバ13の下部には排ガス管15が配
設され、チャンバ13の周壁には冷却水配管(図示せ
ず)が形成されている。また、チャンバ13の底部内壁
面13bに当接して黒鉛等の炭素原料やステンレス等か
らなる湯漏れ受皿16が配設されている。湯漏れ受皿1
6は底部16aと側部16bとが一体成形されることに
より形成されており、底部16aはチャンバ13の底部
内壁面13bの略全面を密着して覆っており、側部16
bは支持軸39の所定外周部やヒータ通電用電極14の
所定外周部等を密着して覆っている。また、底部16a
と底部内壁面13b、側部16bと前記所定外周部との
前記密着による気密性は、湯漏れ受皿16の設計精度及
び圧入精度を良くすることによって確保され得る他、シ
ールド部材等の併用により確保されていてもよい。支持
軸39やヒータ通電用電極14等を覆う側部16bの高
さは各箇所において同レベルであり、底部16aと側部
16bとから得られる湯漏れ受皿16の内容積は全溶融
原料33の容積以上に設定されている。An exhaust gas pipe 15 is arranged below the chamber 13, and a cooling water pipe (not shown) is formed on the peripheral wall of the chamber 13. A hot water leak receiving tray 16 made of a carbon material such as graphite or stainless steel is provided in contact with the inner wall surface 13b of the bottom of the chamber 13. Hot water leak saucer 1
6 is formed by integrally molding a bottom portion 16a and a side portion 16b, and the bottom portion 16a closely adheres to and covers substantially the entire bottom inner wall surface 13b of the chamber 13, and the side portion 16a.
Reference numeral b closely covers a predetermined outer peripheral portion of the support shaft 39, a predetermined outer peripheral portion of the heater energizing electrode 14, and the like. Also, the bottom portion 16a
The airtightness due to the close contact between the bottom inner wall surface 13b, the side portion 16b and the predetermined outer peripheral portion can be ensured by improving the design accuracy and press-fitting accuracy of the hot water leak receiving tray 16, and also by using a shield member or the like. It may have been done. The height of the side portion 16b covering the support shaft 39, the heater energizing electrode 14 and the like is at the same level at each location, and the internal volume of the molten metal leak tray 16 obtained from the bottom portion 16a and the side portion 16b is equal to that of the total molten raw material 33. It is set to the volume or more.
【0018】湯漏れ受皿16が例えば黒鉛製である場合
はよいが、例えばステンレス製である場合は、ステンレ
スが溶融シリコンによって比較的浸食され易いことか
ら、浸食を受けた場合にある程度の時間は破壊されるこ
とがないよう、所定の厚さを有した湯漏れ受皿16にし
ておくことが望ましい。It is preferable that the hot water leak receiving tray 16 is made of, for example, graphite. However, if the hot water leak receiving tray 16 is made of, for example, stainless steel, stainless steel is relatively easily eroded by molten silicon. It is desirable that the hot water leak receiving tray 16 has a predetermined thickness so as not to be damaged.
【0019】また湯漏れ受皿16は図2(a)に示すよ
うに底部16aが平坦であってもよいし、また、図2
(b)に示すように底部16aが曲面のお椀型であって
もよい。底部16aが曲面のお椀型である場合には、溶
融シリコンが凝固した時に発生する応力に対する強度を
向上させることができる。The bottom 16a of the hot water leak receiving tray 16 may be flat as shown in FIG.
As shown in (b), the bottom portion 16a may have a curved bowl shape. When the bottom portion 16a has a curved bowl shape, the strength against the stress generated when the molten silicon is solidified can be improved.
【0020】また、上記以外の例として、湯漏れ受皿1
6の内表面に窒化ボロン(図示せず)を被覆することも
望ましい。この場合の被覆手段としては、コーディング
が好ましいが、技術的に困難な場合は前記窒化ボロンの
タイルを貼り合わせることにより内表面を被覆してもよ
い。湯漏れ受皿16の内表面を窒化ボロンで被覆した場
合には、窒化ボロンが溶融シリコンとの反応性に乏し
く、且つ濡れ性に乏しいため、溶融シリコンが凝固した
時に発生する応力を容易に逃がすことができる。従っ
て、湯漏れ受皿16の耐久性を高めることができる。As an example other than the above, the hot water leak receiving tray 1
It is also desirable to coat the inner surface of 6 with boron nitride (not shown). In this case, coating is preferable as the coating means, but if technically difficult, the boron nitride tiles may be laminated to coat the inner surface. When the inner surface of the hot water leak receiving tray 16 is coated with boron nitride, the boron nitride has poor reactivity with molten silicon and poor wettability, so that the stress generated when the molten silicon solidifies can be easily released. You can Therefore, the durability of the hot water leak receiving tray 16 can be enhanced.
【0021】このように構成された単結晶引き上げ装置
1においては、坩堝31内に投入されたシリコン等の多
結晶原料がヒータ32により溶融されて溶融原料33が
形成される。この溶融原料33に上方から吊下げた種結
晶35(図3)を浸漬し、引き上げ軸34(図3)及び
坩堝31を回転させながら所定の速度で引き上げること
により所定の単結晶36(図3)を成長させる。In the single crystal pulling apparatus 1 configured as described above, the polycrystalline raw material such as silicon charged in the crucible 31 is melted by the heater 32 to form the molten raw material 33. A seed crystal 35 (FIG. 3) hung from above is immersed in the molten raw material 33, and a predetermined single crystal 36 (FIG. 3) is obtained by rotating the pulling shaft 34 (FIG. 3) and the crucible 31 at a predetermined speed. ) Grow.
【0022】上記単結晶引き上げ装置1において、例え
ば坩堝31に多結晶原料を投入した時に原料投入の衝撃
に起因して坩堝31に亀裂が生じると、この亀裂から溶
融原料33が坩堝31外部へ流出し、流出した溶融原料
33は坩堝31の外周壁31cに沿って下方へ流れ、チ
ャンバ13の底部に落下することになる。ここで、実施
の形態1に係る単結晶引き上げ装置1によれば、チャン
バ底部内壁面13bに当接して湯漏れ受皿16が配設さ
れているため、湯漏れ受皿16によって、流出した溶融
原料33を収容することができる。しかも湯漏れ受皿1
6は底部16aと側部16bとが一体成形により形成さ
れているため、底部16aと側部16bとの間には隙間
が存在せず、収容された溶融原料33が他部へ流れ出す
危険性はない。また、湯漏れ受皿16は溶融原料33の
全量を収容し得る内容積を有しているため、収容された
溶融原料33が湯漏れ受皿16から溢れ出す危険性はな
い。よって、溶融原料33が坩堝31の下部機構に達す
ることを確実に防止し、冷却水の蒸発による水蒸気爆発
や、流出した溶融原料が床面から溢れ出して作業員に危
険を及ぼすこと等を確実に防止することができる。In the above-mentioned single crystal pulling apparatus 1, for example, when a polycrystalline raw material is charged into the crucible 31 and a crack is generated in the crucible 31 due to the impact of charging the raw material, the molten raw material 33 flows out of the crucible 31 from the crack. Then, the melted raw material 33 that has flowed out flows downward along the outer peripheral wall 31c of the crucible 31 and falls to the bottom of the chamber 13. Here, according to the single crystal pulling apparatus 1 according to the first embodiment, the molten metal leak receiving tray 16 is disposed so as to be in contact with the chamber bottom inner wall surface 13b. Can be accommodated. Moreover, hot water leak saucer 1
6 has a bottom portion 16a and a side portion 16b integrally formed, there is no gap between the bottom portion 16a and the side portion 16b, and there is no risk that the stored molten raw material 33 will flow out to other portions. Absent. Further, since the molten metal leak receiving tray 16 has an internal volume capable of accommodating the entire amount of the molten raw material 33, there is no risk that the stored molten raw material 33 overflows from the molten metal leak receiving tray 16. Therefore, it is possible to reliably prevent the molten raw material 33 from reaching the lower mechanism of the crucible 31, and to ensure that the steam explosion due to the evaporation of the cooling water and the leaked molten raw material overflow from the floor and pose a danger to the worker. Can be prevented.
【0023】実施の形態1に係る単結晶引き上げ装置1
においては湯漏れ受皿16が圧入によりチャンバ底部内
壁面13b内に配設されている場合について示したが、
何らこれに限定されるものでなく、別の実施の形態にお
いては、湯漏れ受皿16が例えばチャンバ13の底部側
壁においてボルト等により固定される構造となっていて
もよい。Single crystal pulling apparatus 1 according to the first embodiment
In the above, the case where the hot water leak receiving tray 16 is disposed inside the chamber bottom inner wall surface 13b by press fitting has been described.
The present invention is not limited to this, and in another embodiment, the hot water leak receiving tray 16 may be fixed to the bottom side wall of the chamber 13 by a bolt or the like.
【0024】また、実施の形態1に係る単結晶引き上げ
装置においては、湯漏れ受皿16がチャンバ底部内壁面
13bに当接して配設されている場合について示した
が、何らこれに限定されるものでなく、下記の実施の形
態2に示すように、それ自体がチャンバ13の底部を構
成していてもよい。Further, in the single crystal pulling apparatus according to the first embodiment, the case where the molten metal leak receiving tray 16 is arranged in contact with the chamber bottom inner wall surface 13b has been described, but the invention is not limited to this. Instead, as shown in the second embodiment below, it may itself form the bottom of the chamber 13.
【0025】<実施の形態2>図3は実施の形態2に係
る単結晶引き上げ装置2を示した模式的断面図である。
なお、実施の形態1に係る単結晶引き上げ装置と同一の
機能を有する構成部品には同一の符号を付してある。<Second Embodiment> FIG. 3 is a schematic sectional view showing a single crystal pulling apparatus 2 according to a second embodiment.
The components having the same functions as those of the single crystal pulling apparatus according to the first embodiment are designated by the same reference numerals.
【0026】図中23はチャンバを示しており、チャン
バ23は無底略円筒形状をしている。チャンバ23の下
方には湯漏れ受皿26が配設されており、湯漏れ受皿2
6はそれによってチャンバ23の底部の機能を果たして
おり、チャンバ23と同等の直径及び十分な強度を有す
る構造となっている。チャンバ23と湯漏れ受皿26と
の各連結部(図示せず)はシールド部材等によって確実
にシールドされている。湯漏れ受皿26は湯漏れ受皿1
6(図1)の場合と同様に底部26aと側部26bとが
一体成形により形成されたものであり、全溶融原料33
を収容し得る内容積を有している。Reference numeral 23 in the drawing denotes a chamber, which has a substantially cylindrical shape without a bottom. A hot water leak receiving tray 26 is disposed below the chamber 23.
6 thereby fulfills the function of the bottom of the chamber 23, and has a structure having the same diameter and sufficient strength as the chamber 23. Each connecting portion (not shown) between the chamber 23 and the hot water leak receiving tray 26 is reliably shielded by a shield member or the like. The hot water leak receiving tray 26 is the hot water leak receiving tray 1
Similar to the case of FIG. 6 (FIG. 1), the bottom portion 26a and the side portion 26b are integrally formed, and the total molten raw material 33
Has an internal volume capable of accommodating
【0027】[0027]
<実施例>実施例では、図1に示した単結晶引き上げ装
置を以下に示す条件により製造した。<Example> In the example, the single crystal pulling apparatus shown in FIG. 1 was manufactured under the following conditions.
【0028】湯漏れ受皿16の材質:黒鉛 湯漏れ受皿16の内容積:35000cm3 湯漏れ受皿16の配設方法:圧入による 溶融原料33の容積:32200cm3 上記実施例に係る単結晶成長装置1を用いて単結晶36
の引き上げを行ったところ、192回の引き上げのうち
坩堝31の破損事故(キレツの発生を含む)が発生した
のは4件であった。しかしながら前記4回の破損事故に
よって被害を受けた作業員数は零であり、坩堝31の下
部機構には一度も被害が及ばず、水蒸気爆発が発生する
こともなかった。Material of hot water leak receiving tray 16: graphite Internal volume of hot water leak receiving tray 16: 35000 cm 3 Arrangement method of hot water leak receiving tray 16: Volume of molten raw material 33 by press-fitting: 32200 cm 3 Single crystal growth apparatus 1 according to the above embodiment Using single crystal 36
As a result of the 192 times of pulling up, the crucible 31 was damaged in four cases (including the occurrence of a crack) in 4 cases. However, the number of workers damaged by the four damage accidents was zero, the lower mechanism of the crucible 31 was never damaged, and no steam explosion occurred.
【図1】(a)は本発明の実施の形態に係る単結晶引き
上げ装置を示した模式的断面図であり、(b)は要部の
模式的部分平面図である。1A is a schematic cross-sectional view showing a single crystal pulling apparatus according to an embodiment of the present invention, and FIG. 1B is a schematic partial plan view of a main part.
【図2】(a)、(b)は実施の形態における湯漏れ受
皿を示した模式的斜視図である。2 (a) and 2 (b) are schematic perspective views showing a molten metal leak tray in the embodiment.
【図3】別の実施の形態に係る単結晶引き上げ装置を示
した模式的断面図である。FIG. 3 is a schematic cross-sectional view showing a single crystal pulling apparatus according to another embodiment.
【図4】CZ法で使用される単結晶引き上げ装置を示し
た模式的断面図である。FIG. 4 is a schematic cross-sectional view showing a single crystal pulling apparatus used in the CZ method.
1、2、3 単結晶引き上げ装置 16、26 湯漏れ受皿 33 溶融原料 1, 2, 3 Single crystal pulling device 16, 26 Hot water leak receiving tray 33 Molten raw material
Claims (2)
れ、該湯漏れ受皿が一体成形により形成されると共に、
全溶融原料を収容し得る内容積を有していることを特徴
とする単結晶引き上げ装置。1. A hot water leak receiving tray is provided at the bottom of the chamber, and the hot water leak receiving tray is formed by integral molding.
A single crystal pulling apparatus having an internal volume capable of accommodating all molten raw materials.
窒化ボロンで被覆されていることを特徴とする単結晶引
き上げ装置。2. A single crystal pulling apparatus, wherein the inner surface of the molten metal leak receiving tray according to claim 1 is coated with boron nitride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2502496A JP2937104B2 (en) | 1996-02-13 | 1996-02-13 | Single crystal pulling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2502496A JP2937104B2 (en) | 1996-02-13 | 1996-02-13 | Single crystal pulling device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09221385A true JPH09221385A (en) | 1997-08-26 |
JP2937104B2 JP2937104B2 (en) | 1999-08-23 |
Family
ID=12154354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2502496A Expired - Fee Related JP2937104B2 (en) | 1996-02-13 | 1996-02-13 | Single crystal pulling device |
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JP (1) | JP2937104B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1191130A1 (en) * | 2000-03-03 | 2002-03-27 | Shin-Etsu Handotai Co., Ltd | Saucer for escaped melt in apparatus for pulling up single crystal |
CN101899703A (en) * | 2010-08-06 | 2010-12-01 | 浙江碧晶科技有限公司 | Crucible for growing crystalline silicon ingot and extracting silicon raw material of crystalline silicon ingot and preparation method and application thereof |
JP2011032138A (en) * | 2009-08-04 | 2011-02-17 | Yukichi Horioka | Method for detecting leakage |
JP2011126783A (en) * | 2011-03-30 | 2011-06-30 | Yukichi Horioka | Method for detecting leakage |
CN102400231A (en) * | 2011-11-15 | 2012-04-04 | 宁夏日晶新能源装备股份有限公司 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
KR101252923B1 (en) * | 2010-10-18 | 2013-04-09 | 주식회사 엘지실트론 | Lower Insulating System of Chamber and Single Crystal Grower including the same |
-
1996
- 1996-02-13 JP JP2502496A patent/JP2937104B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1191130A1 (en) * | 2000-03-03 | 2002-03-27 | Shin-Etsu Handotai Co., Ltd | Saucer for escaped melt in apparatus for pulling up single crystal |
US6605152B2 (en) | 2000-03-03 | 2003-08-12 | Shin-Etsu Handotai Co., Ltd. | Catch pan for melt leakage in apparatus for pulling single crystal |
EP1191130A4 (en) * | 2000-03-03 | 2008-02-27 | Shinetsu Handotai Kk | Saucer for escaped melt in apparatus for pulling up single crystal |
JP2011032138A (en) * | 2009-08-04 | 2011-02-17 | Yukichi Horioka | Method for detecting leakage |
CN101899703A (en) * | 2010-08-06 | 2010-12-01 | 浙江碧晶科技有限公司 | Crucible for growing crystalline silicon ingot and extracting silicon raw material of crystalline silicon ingot and preparation method and application thereof |
KR101252923B1 (en) * | 2010-10-18 | 2013-04-09 | 주식회사 엘지실트론 | Lower Insulating System of Chamber and Single Crystal Grower including the same |
JP2011126783A (en) * | 2011-03-30 | 2011-06-30 | Yukichi Horioka | Method for detecting leakage |
CN102400231A (en) * | 2011-11-15 | 2012-04-04 | 宁夏日晶新能源装备股份有限公司 | Center shaft material-stopping hood structure in single crystal furnace thermal field |
Also Published As
Publication number | Publication date |
---|---|
JP2937104B2 (en) | 1999-08-23 |
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