CN102400225A - Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof - Google Patents
Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof Download PDFInfo
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- CN102400225A CN102400225A CN2010102839662A CN201010283966A CN102400225A CN 102400225 A CN102400225 A CN 102400225A CN 2010102839662 A CN2010102839662 A CN 2010102839662A CN 201010283966 A CN201010283966 A CN 201010283966A CN 102400225 A CN102400225 A CN 102400225A
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- solar cell
- woolen
- making liquid
- silicon solar
- monocrystaline silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a texture etching solution of a monocrystaline silicon solar cell, a preparation method, and an application thereof. Raw materials of the texture etching solution comprise the following components, by weight, 1-3% of tetramethylammonium hydroxide, 7-9% of isopropyl alcohol and 88-92% of deionized water. The preparation method comprises: adding the deionized water to a texture etching groove, then adding the tetramethylammonium hydroxide and the isopropyl alcohol, controlling a temperature to 75-85 DEG C, completely and uniformly stirring to obtain the texture etching solution, which is applicable for treatment of silicon wafers. Compared to the prior art, with the present invention, the texture etching solution has a good anisotropic etching characteristic and high etching rate, the etching surface has good homogeneity, the etching solution does not contain free-alkali metal ions, has advantages of no toxicity and easy operation and control, and can provide compatibility with the microelectronic technology.
Description
Technical field
The present invention relates to the photovoltaic technology field, especially relate to a kind of Woolen-making liquid of monocrystaline silicon solar cell.
Background technology
Solar cell has obtained using widely as a kind of new and renewable sources of energy; Wherein the development of monocrystalline silicon battery is relatively ripe; But pursue higher efficiency of conversion and be still scientific research personnel's target, the texture of utilizing anisotropic etchant to change silicon chip surface is an effective and low approach of cost.At present; The corrosive fluid that in monocrystaline silicon solar cell industry, uses mainly comprises: highly basic (NaOH, KOH), additive (Virahol, water glass, ethanol etc.); This method is utilized the principle of the anisotropic etch of silicon; Form similar pyramidal structure on the monocrystaline silicon solar cell surface, effectively reduce the reflectivity of battery, thereby improve the transformation efficiency of solar cell sunshine.But equally also have many problems, such as: making herbs into wool overlong time, pyramid is oversize and inadequately evenly, the influence of alkalimetal ion etc.
Summary of the invention
The object of the invention is exactly the Woolen-making liquid that the monocrystaline silicon solar cell that a kind of treatment effect is good, the making herbs into wool time lacks is provided for the defective that overcomes above-mentioned prior art existence.
The object of the invention can be realized through following technical scheme:
A kind of Woolen-making liquid of monocrystaline silicon solar cell is characterized in that, the raw material of this Woolen-making liquid comprises following component and weight percent content:
Virahol 7～9;
Deionized water 88～92.
The preferred 2wt% of the content of described TMAH, the preferred 8wt% of the content of Virahol, the preferred 90wt% of the content of deionized water.
A kind of preparation method of Woolen-making liquid of monocrystaline silicon solar cell is characterized in that, this method may further comprise the steps:
(1) get the raw materials ready according to following component and weight percent content:
Virahol 7～9,
Deionized water 88～92;
(2) earlier deionized water is joined in the texturing slot, add TMAH and Virahol again, controlled temperature is 75～85 ℃, stirs again, promptly obtains the Woolen-making liquid of monocrystaline silicon solar cell.
A kind of application of Woolen-making liquid of monocrystaline silicon solar cell is characterized in that, places Woolen-making liquid to corrode the 30～35min of place the silicon chip after surface cleaning, gets final product with the silicon chip after the washed with de-ionized water corrosion then.
The temperature of described corrosion treatment is 78～82 ℃.
Compared with prior art; The present invention overcomes the deficiencies such as influence of making herbs into wool time length that existing anisotropy making herbs into wool exists, corrosion surface lack of homogeneity, alkalimetal ion; The Wool-making agent and the etching method thereof of the surface alkali making herbs into wool of a kind of monocrystaline silicon solar cell are provided, have comprised following advantage:
(1) effect of making herbs into wool has obtained tangible improvement, has good anisotropic etch characteristic, and erosion rate is high, the corrosion surface good uniformity;
(2) shortened the making herbs into wool time, shortened to about present 30min by the 40min of traditional solution, the day output of every production line has obtained significantly improving like this;
(3) the alkali-free metals ion is nontoxic, the advantage that is prone to control, and can be compatible with microelectronics;
(4) advantage of short-circuit current Isc has been verified the good anti-reflective effect of TMAH matte, and the absorption of incident light rate improves, and produces more electron-hole pair, thereby improves short-circuit current; The main process of decision open circuit voltage Voc is compound in the semi-conductor, comprises in surface recombination and the body compoundly, and recombination rate is low more; Voc is high more, and simultaneously, the minimizing that alkalimetal ion pollutes also makes the inner electric leakage in p-n junction interface reduce; Increased shunting resistance Rsh, the difference of two kinds of matte series resistance Rs is not obvious, explains that the TMAH matte equally can be good with contacting of metal electrode; TMAH matte positive surface charge concentration is less than with NaOH matte positive surface charge concentration, explains that this corrosion system is more suitable for the back electrode solar cell, in addition; This solution system has been avoided the pollution of alkalimetal ion, makes the passivation effect of SiNx:H more obvious.The peak power Pm of TMAH matte solar cell reaches 2.37W, and efficiency eta reaches 16.03%.
Description of drawings
After Fig. 1 is common making herbs into wool corrosive fluid corrosion of silicon 30min, the AFM figure that obtains;
After Fig. 2 is common making herbs into wool corrosive fluid corrosion of silicon 30min, the SEM photo that obtains;
Behind the Woolen-making liquid corrosion of silicon 30min that Fig. 3 obtains for embodiment 1, the AFM figure that obtains;
Behind the Woolen-making liquid corrosion of silicon 30min that Fig. 4 obtains for embodiment 1, the SEM photo that obtains.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is elaborated.
The TMAH (TMAH) of 10g, the Virahol (IPA) of 40g and the deionized water of 450g are added texturing slot, and fully stir, process Woolen-making liquid.
Select 50 * 50mm for use
2,<100>Crystal orientation p type CZ monocrystalline silicon piece, thick about 200 μ m, resistivity is 2-3 Ω cm, minority carrier life time 1.65 μ s.Woolen-making liquid is put into through the silicon chip of washed with de-ionized water in the surface corrode, corrosion temperature is at 80 ± 2 ℃, and etching time is 30min, and the silicon chip after will corroding at last cleans with deionized water.AFM figure that obtains and SEM photo such as Fig. 3 and Fig. 4 are visible, form pyramid structure at silicon chip surface, and size is even, and fraction of coverage is very high.
Utilize common making herbs into wool corrosive fluid (the NaOH solution of 1.3wt%, the C of 10wt%
2H
5The H of OH, 88.7wt%
2O) silicon chip is handled, the control treatment temp is 83 ± 2 ℃, and the AFM figure and the SEM photo that obtain are as depicted in figs. 1 and 2.
The Woolen-making liquid that utilizes present embodiment to obtain is handled the silicon wafer to manufacture solar cell that obtains, and its performance is as shown in table 1.
Table 1
| Isc/A | Voc/mV | Rsh/Ω | Rs/Ω | Pm/W | FF | η/％ | |
| TMAH | 5.117 | 615.3 | 7.415 | 0.0106 | 2.370 | 0.7528 | 16.03 |
| NaOH | 5.049 | 610.7 | 7.220 | 0.0105 | 2.283 | 0.7403 | 15.67 |
A kind of preparation method of Woolen-making liquid of monocrystaline silicon solar cell, this method may further comprise the steps:
Get the raw materials ready according to following component and content: TMAH 5g, Virahol 45g, deionized water 450g; Earlier deionized water is joined in the texturing slot; Add TMAH and Virahol again; Controlled temperature is 80 ℃, stirs again, promptly obtains the Woolen-making liquid of monocrystaline silicon solar cell.
The silicon chip of surface after washed with de-ionized water placed Woolen-making liquid, and the control treatment temp is 80 ℃ and carries out corrosion treatment 30min, gets final product with the silicon chip after the washed with de-ionized water corrosion then.
A kind of preparation method of Woolen-making liquid of monocrystaline silicon solar cell, this method may further comprise the steps:
Get the raw materials ready according to following component and content: TMAH 10g, Virahol 45g, deionized water 445g; Earlier deionized water is joined in the texturing slot; Add TMAH and Virahol again; Controlled temperature is 80 ℃, stirs again, promptly obtains the Woolen-making liquid of monocrystaline silicon solar cell.
The silicon chip of surface after washed with de-ionized water placed Woolen-making liquid, and the control treatment temp is 78 ℃ and carries out corrosion treatment 35min, gets final product with the silicon chip after the washed with de-ionized water corrosion then.
A kind of preparation method of Woolen-making liquid of monocrystaline silicon solar cell, this method may further comprise the steps:
Get the raw materials ready according to following component and content: TMAH 15g, Virahol 35g, deionized water 450g; Earlier deionized water is joined in the texturing slot; Add TMAH and Virahol again; Controlled temperature is 85 ℃, stirs again, promptly obtains the Woolen-making liquid of monocrystaline silicon solar cell.
The silicon chip of surface after washed with de-ionized water placed Woolen-making liquid, and the control treatment temp is 82 ℃ and carries out corrosion treatment 30min, gets final product with the silicon chip after the washed with de-ionized water corrosion then.
Specifically described the application example of technical scheme of the present invention above, it only provides as an example, is not regarded as application limitations of the present invention.All operational conditions be equal to replacement, all drop within protection scope of the present invention.
Claims (5)
1. the Woolen-making liquid of a monocrystaline silicon solar cell is characterized in that, the raw material of this Woolen-making liquid comprises following component and weight percent content:
TMAH 1～3;
Virahol 7～9;
Deionized water 88～92.
2. the Woolen-making liquid of a kind of monocrystaline silicon solar cell according to claim 1 is characterized in that, the preferred 2wt% of the content of described TMAH, the preferred 8wt% of the content of Virahol, the preferred 90wt% of the content of deionized water.
3. the preparation method of the Woolen-making liquid of a monocrystaline silicon solar cell as claimed in claim 1 is characterized in that, this method may further comprise the steps:
(1) get the raw materials ready according to following component and weight percent content:
TMAH 1～3,
Virahol 7～9,
Deionized water 88～92;
(2) earlier deionized water is joined in the texturing slot, add TMAH and Virahol again, controlled temperature is 75～85 ℃, stirs again, promptly obtains the Woolen-making liquid of monocrystaline silicon solar cell.
4. the application of the Woolen-making liquid of a monocrystaline silicon solar cell as claimed in claim 1 is characterized in that, places Woolen-making liquid to carry out corrosion treatment 30～35min the silicon chip after surface cleaning, gets final product with the silicon chip after the washed with de-ionized water corrosion then.
5. the application of the Woolen-making liquid of a kind of monocrystaline silicon solar cell according to claim 4 is characterized in that, the temperature of described corrosion treatment is 78～82 ℃.
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| CN2010102839662A CN102400225A (en) | 2010-09-16 | 2010-09-16 | Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN107400926A (en) * | 2017-08-14 | 2017-11-28 | 通威太阳能（安徽）有限公司 | A kind of battery slice etching corrosive liquid and its preparation technology |
| CN110707163A (en) * | 2019-09-20 | 2020-01-17 | 浙江师范大学 | Method for texturing on surface of single crystal silicon by using tetramethylguanidine organic alkali |
| CN113284978A (en) * | 2021-04-20 | 2021-08-20 | 山西潞安太阳能科技有限责任公司 | Wet-process texturing process suitable for P-type and N-type solar cells |
Citations (2)
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| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| WO2010023318A1 (en) * | 2008-09-01 | 2010-03-04 | Université De Neuchâtel | Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device |
-
2010
- 2010-09-16 CN CN2010102839662A patent/CN102400225A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
| WO2010023318A1 (en) * | 2008-09-01 | 2010-03-04 | Université De Neuchâtel | Method for limiting epitaxial growth in a photoelectric device with heterojunctions, and photoelectric device |
Non-Patent Citations (1)
| Title |
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| 张建辉等: "TMAH腐蚀液制作硅微结构的研究", 《传感技术学报》, vol. 19, 30 June 2006 (2006-06-30), pages 593 - 596 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN107400926A (en) * | 2017-08-14 | 2017-11-28 | 通威太阳能（安徽）有限公司 | A kind of battery slice etching corrosive liquid and its preparation technology |
| CN110707163A (en) * | 2019-09-20 | 2020-01-17 | 浙江师范大学 | Method for texturing on surface of single crystal silicon by using tetramethylguanidine organic alkali |
| CN113284978A (en) * | 2021-04-20 | 2021-08-20 | 山西潞安太阳能科技有限责任公司 | Wet-process texturing process suitable for P-type and N-type solar cells |
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Application publication date: 20120404 |