CN113284978A - Wet-process texturing process suitable for P-type and N-type solar cells - Google Patents
Wet-process texturing process suitable for P-type and N-type solar cells Download PDFInfo
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- CN113284978A CN113284978A CN202110422777.7A CN202110422777A CN113284978A CN 113284978 A CN113284978 A CN 113284978A CN 202110422777 A CN202110422777 A CN 202110422777A CN 113284978 A CN113284978 A CN 113284978A
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- China
- Prior art keywords
- cleaning
- type
- texturing
- pure water
- water
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- 238000000034 method Methods 0.000 title claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 28
- 210000002268 wool Anatomy 0.000 claims abstract description 13
- 239000000654 additive Substances 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000011259 mixed solution Substances 0.000 claims description 13
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- 239000003973 paint Substances 0.000 claims description 4
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 3
- CYDQOEWLBCCFJZ-UHFFFAOYSA-N 4-(4-fluorophenyl)oxane-4-carboxylic acid Chemical compound C=1C=C(F)C=CC=1C1(C(=O)O)CCOCC1 CYDQOEWLBCCFJZ-UHFFFAOYSA-N 0.000 claims description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- HLCFGWHYROZGBI-JJKGCWMISA-M Potassium gluconate Chemical compound [K+].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O HLCFGWHYROZGBI-JJKGCWMISA-M 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- 229960001031 glucose Drugs 0.000 claims description 3
- 235000001727 glucose Nutrition 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 239000004224 potassium gluconate Substances 0.000 claims description 3
- 235000013926 potassium gluconate Nutrition 0.000 claims description 3
- 229960003189 potassium gluconate Drugs 0.000 claims description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 239000000176 sodium gluconate Substances 0.000 claims description 3
- 235000012207 sodium gluconate Nutrition 0.000 claims description 3
- 229940005574 sodium gluconate Drugs 0.000 claims description 3
- 239000001540 sodium lactate Substances 0.000 claims description 3
- 235000011088 sodium lactate Nutrition 0.000 claims description 3
- 229940005581 sodium lactate Drugs 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 5
- -1 TMAH ions Chemical class 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910052700 potassium Inorganic materials 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The wet-process texturing process for the P-type and N-type solar cells comprises the following process steps of pre-cleaning, pure water cleaning, texturing, pure water cleaning, post-cleaning, pure water cleaning, acid cleaning, pure water cleaning, hot water slow lifting and drying, wherein 6% of tetramethylammonium hydroxide (TMAH), 1% of texturing additive and 93% of pure water in volume ratio are adopted as a texturing solution during texturing, the texturing temperature is 80 ℃, and the texturing time is 600 s. Ions in TMAH can carry out the wool making reaction like Na and K ions, and are also attached to a complete crystal surface, and the intervention of OH & lt- & gt and water molecules in the wool making reaction is slowed down due to the larger atomic radius of the TMAH ions, so that the stable running of the wool making reaction is facilitated.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
Solar energy is a clean renewable energy source, and is beginning to be noticed and researched by people. With the increasing problems of global energy shortage, environmental pollution and the like, solar photovoltaic power generation becomes a key development industry of various countries due to the characteristics of cleanness, high efficiency, safety, convenience and the like. In recent years, development and competition of the photovoltaic industry are free from advantages of high reliability and the like of monocrystalline silicon, and large-scale diversified production is realized. With the continual updating and iteration of technologies, high conversion efficiency is a pursuit goal of various large companies.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to provide a new texturing process to further improve the efficiency of the solar cell.
The technical scheme adopted by the invention is as follows: the wet-process texturing process for the P-type and N-type solar cells comprises the following process steps of pre-cleaning, pure water cleaning, texturing, pure water cleaning, post-cleaning, pure water cleaning, acid cleaning, pure water cleaning, hot water slow lifting and drying, wherein 6% of tetramethyl ammonium hydroxide TMAH, 1% of texturing additives and 93% of pure water in volume ratio are used as a texturing solution during texturing, the texturing temperature is 80 ℃, and the texturing time is 600 s.
Post-cleaning with KOH + H2O2Cleaning with mixed solution containing KOH 1-3 wt% and H2O2The mass percentage content of the water-based paint is 1.5-3%, and the balance is water.
The acid cleaning is carried out by using a mixed solution of HCl and HF, wherein the mixed solution comprises 3-5% of HCl by mass, 2-4% of HF by mass and the balance of water.
When hot water is used for slow pulling, the temperature is 60-65 ℃.
The down additive comprises, by mass, 0.1-3% of glucose, sodium gluconate or potassium gluconate, 100 ppb-8000 ppb of polyoxyethylene ether, 0.001-2% of sodium lactate or sodium citrate, 0.001-2% of propylene glycol, 0.01-6% of sodium silicate, 0.001-2% of sodium carbonate or sodium bicarbonate and the balance of water.
The beneficial effects adopted by the invention are as follows: compared with NaOH texturing, the pyramid texturing by TMAH is softer in appearance, ions in the TMAH are easily removed by cleaning, Na + pollution in the NaOH texturing process is avoided, and deep energy level composite centers on the surface of crystalline silicon are reduced. In addition, ions in TMAH can carry out the wool making reaction like Na and K ions, and are also attached to a complete crystal surface, and the intervention of OH & lt- & gt and water molecules in the wool making reaction is slowed down due to the larger atomic radius of the TMAH ions, so that the stable progress of the wool making reaction is facilitated.
Detailed Description
Pre-cleaning: cleaning with mixed solution of KOH + H2O2 to remove the surface dirt of the silicon wafer, wherein the content of KOH is 3-10% by mass, and H2O2The mass percentage content of the water-based paint is 4-8%, and the balance is water.
Cleaning with pure water: and removing the residual mixed solution on the surface of the silicon wafer.
TMAH (tetramethylammonium hydroxide) texturing: TMAH with the volume ratio of 6 percent, texturing additive with the volume ratio of 1 percent and pure water with the volume ratio of 93 percent, keeping the texturing temperature at 80 ℃ and the texturing time at 600 s; additive for making wool: 0.1 to 3 percent of glucose, sodium gluconate or potassium gluconate, 100ppb to 8000ppb of polyoxyethylene ether, 0.001 to 2 percent of sodium lactate or sodium citrate, 0.001 to 2 percent of propylene glycol, 0.01 to 6 percent of sodium silicate, 0.001 to 2 percent of sodium carbonate or sodium bicarbonate and the balance of water.
Cleaning with pure water: and removing the residual mixed solution on the surface of the silicon wafer.
Post-cleaning: cleaning the KOH + H2O2 mixed solution to remove organic matters and side reactants such as residual additives, wherein the mass percentage of KOH is 2 percent, and H is2O2The mass percentage content of the water-based paint is 1.5-3%, and the balance is water.
Cleaning with pure water: and removing the residual mixed solution on the surface of the silicon wafer.
Acid washing: cleaning the silicon wafer by using the mixed solution of Hcl and HF, and removing an oxide layer and metal ions on the surface of the silicon wafer, wherein the mass percent of Hcl is 3-5%, the mass percent of HF is 2-4%, and the balance is water.
Cleaning with pure water: and removing the residual mixed solution on the surface of the silicon wafer.
Slowly pulling hot water: the surface of the silicon wafer is cleaned by the tension of water with the temperature of 64 ℃, and the surface temperature of the silicon wafer is improved.
Drying: drying at 90 deg.C to dry the surface of the silicon wafer without pure water and water vapor residue.
Claims (5)
1. A wet-process texturing process suitable for P-type and N-type solar cells is characterized by comprising the following steps: the method comprises the following process steps of pre-cleaning, pure water cleaning, wool making, pure water cleaning, post-cleaning, pure water cleaning, acid cleaning, pure water cleaning, hot water slow lifting and drying, wherein 6% of tetramethyl ammonium hydroxide TMAH, 1% of wool making additive and 93% of pure water in volume ratio are adopted as a wool making solution during wool making, the wool making temperature is 80 ℃, and the wool making time is 600 s.
2. The wet etching process for the P-type and N-type solar cells according to claim 1, wherein: post-cleaning with KOH + H2O2Cleaning with mixed solution containing KOH 1-3 wt% and H2O2The mass percentage content of the water-based paint is 1.5-3%, and the balance is water.
3. The wet etching process for the P-type and N-type solar cells according to claim 1, wherein: the acid cleaning is carried out by using a mixed solution of HCl and HF, wherein the mixed solution comprises 3-5% of HCl by mass, 2-4% of HF by mass and the balance of water.
4. The wet etching process for the P-type and N-type solar cells according to claim 1, wherein: when hot water is used for slow pulling, the temperature is 60-65 ℃.
5. The wet etching process for the P-type and N-type solar cells according to claim 1, wherein: the down additive comprises, by mass, 0.1-3% of glucose, sodium gluconate or potassium gluconate, 100 ppb-8000 ppb of polyoxyethylene ether, 0.001-2% of sodium lactate or sodium citrate, 0.001-2% of propylene glycol, 0.01-6% of sodium silicate, 0.001-2% of sodium carbonate or sodium bicarbonate and the balance of water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110422777.7A CN113284978A (en) | 2021-04-20 | 2021-04-20 | Wet-process texturing process suitable for P-type and N-type solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110422777.7A CN113284978A (en) | 2021-04-20 | 2021-04-20 | Wet-process texturing process suitable for P-type and N-type solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113284978A true CN113284978A (en) | 2021-08-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110422777.7A Pending CN113284978A (en) | 2021-04-20 | 2021-04-20 | Wet-process texturing process suitable for P-type and N-type solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113284978A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400225A (en) * | 2010-09-16 | 2012-04-04 | 上海神舟新能源发展有限公司 | Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof |
| CN102732886A (en) * | 2011-04-01 | 2012-10-17 | 李康 | Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method |
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN112458540A (en) * | 2020-10-27 | 2021-03-09 | 山西潞安太阳能科技有限责任公司 | Solar single crystal texturing process |
-
2021
- 2021-04-20 CN CN202110422777.7A patent/CN113284978A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400225A (en) * | 2010-09-16 | 2012-04-04 | 上海神舟新能源发展有限公司 | Texture etching solution of monocrystaline silicon solar cell, preparation method, and application thereof |
| CN102732886A (en) * | 2011-04-01 | 2012-10-17 | 李康 | Matte manufacturing solution of solar energy single crystal silicon wafers and its preparation method |
| CN104201247A (en) * | 2014-09-11 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer texturing process |
| CN112458540A (en) * | 2020-10-27 | 2021-03-09 | 山西潞安太阳能科技有限责任公司 | Solar single crystal texturing process |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210820 |
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