CN102400138B - 镀膜件及其制作方法 - Google Patents
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Abstract
本发明涉及一种镀膜件及其制作方法。一种镀膜件，包括一基材、一催化层、一结合层和一疏水层，该催化层为一Sn膜层，该结合层为一含Ti、Sn、SnO2和TiO2膜层，该疏水层一为Si-N层。本发明还提供了一种通过磁控溅射来制作上述镀膜件的方法。通过本发明制作的镀膜件具有更稳定的疏水性能。
Description
技术领域
本发明涉及一种镀膜件及其制作方法，尤其涉及一种具有疏水性能的镀膜件及其制作方法。
背景技术
众所周知，固体表面对液体的润湿性是材料表面的一个重要性质。疏水表面一般是指水的接触角大于90°的表面，超疏水表面一般指水的接触角大于150°的表面。超疏水表面在工农业生产与日常生活中应用广泛，可用来防水、防污染、抗氧化等。
在工件表面涂装疏水薄膜是常用的表面处理方法，以此来实现工件表面疏水的功能。所述的疏水薄膜根据膜层组分的不同主要可分为无机疏水薄膜、有机聚合物疏水薄膜及无机/有机复合疏水薄膜。目前较为成熟的无机疏水薄膜多以化学方法制作，如溶胶-凝胶法、阳极氧化法、化学气相沉积(CVD)等。然而，上述的方法受环境因素影响较大，且所制得的疏水薄膜的疏水性能稳定性较差。
发明内容
有鉴于此，有必要提供一种具有稳定的疏水性能的镀膜件。
另外，还有必要提供一种制作上述镀膜件的方法。
一种镀膜件，包括一基材、一催化层、一结合层和一疏水层，所述催化层形成于基材上，所述结合层形成于催化层上，所述疏水层形成于结合层上，该催化层为一Sn膜层，该结合层为一含Ti、Sn、SnO2和TiO2的膜层，该疏水层为一Si-N膜层。
一种镀膜件的制作方法为：
提供一基材；在该基材表面磁控溅射一Sn膜层；在该Sn膜层上磁控溅射一Ti膜层；对形成有Sn膜和Ti膜层的基材在真空室中进行热氧化处理，使该二膜层中的部分Sn及部分Ti氧化生成SnO2和TiO2，形成一含Ti、Sn、SnO2和TiO2结合层；在该结合层上磁控溅射一疏水层，该疏水层为一Si-N膜层。
本发明镀膜件及其制作方法，通过对Sn膜层和Ti膜层的热氧化处理后，形成了一具有微米-纳米的乳突结构的结合层，可使得后续的疏水层牢固地结合于结合层的表面，使该疏水层的机械稳定性增强，达到更好的疏水效果。
附图说明
图1是本发明较佳实施例的镀膜件的剖视示意图。
图2是本发明较佳实施例的镀膜件的制作流程图。
主要元件符号说明
镀膜件 100
基材 10
催化层 11
结合层 13
疏水层 15
具体实施方式
请参阅图1，本发明一较佳实施例的镀膜件100，包括一基材10、一催化层11、一结合层13及一疏水层15。
该基材10可为不锈钢、铝等金属材料，也可为陶瓷、玻璃等非金属材料。
该催化层11为一Sn膜层。
该结合层13为一含Ti、Sn、SnO2和TiO2膜层。
该疏水层15为一Si-N膜层。
所述催化层11形成于基材10上，所述结合层13形成于催化层11上，所述疏水层15形成于结合层13上。
所述催化层11、结合层13和疏水层15，每一膜层的较佳厚度均在0.5μm～1.0μm之间。
本发明一较佳实施方式的镀膜件100的制作方法包括以下步骤：
提供一基材10。所述基材10的材质可为不锈钢、铝等金属材料，也可为陶瓷、玻璃等非金属材料。
对该基材10进行表面预处理。该表面预处理可包括常规的对基材10进行化学除油、除蜡、酸洗、超声波清洗及烘干等。
对经上述处理后的基材10的表面进行等离子体清洗，进一步去除基材10表面的油污，以改善基材10表面与后续涂层的结合力。
该等离子体清洗的具体操作及工艺参数可为：将基材10放入一磁控溅射镀膜机(图未示)的真空室内，将该真空室抽真空至6.0×10-5torr，通入流量为50～400sc cm(标准状态毫升/分钟)的氩气(纯度为99.999％)，对基材10施加-300～-600V的偏压，对基材10表面进行等离子体清洗，清洗时间为5～10min。
在完成等离子清洗后，开启一Sn靶的电源，将真空室设置到真空度为3～4×10-5torr，以氩气为工作气体，其流量设为300～500sccm，对Sn靶施加-100～-200V的偏压，在50～100的镀膜温度下于基材10的表面沉积一Sn膜层。沉积该Sn层的时间为5～10min。沉积完成后关闭Sn靶。
沉积所述Sn膜层后，开启一Ti靶的电源，将真空室设置到真空度为3～4×10-5torr，以氩气为工作气体，其流量设为300～500sccm，对Ti靶施加-150～-200V的偏压，在120～200的镀膜温度下于Sn膜层的表面沉积一Ti膜层，沉积时间为10～20min。沉积完成后关闭Ti靶。
将所述形成有Sn膜层及Ti膜层的基材10置于低氧的状态下，并以15-30℃/min的速度将其加热至400～700℃，保温40～90min，使该Sn膜层中的部分Sn及Ti膜层中的部分Ti发生氧化反应，以在未氧化的Sn膜层的表面形成一含Ti、Sn、SnO2和Ti O2的结合层13。该未氧化的Sn膜层形成所述催化层11。所述的低氧状态是指氧气的体积百分比含量低于真空腔体中气体的2％。
所述结合层13的形成原理为：由于Sn的熔点低于Ti膜层中的Ti，在所述的氧化反应过程中，催化层中的Sn可获得较大的生长能量驱动力，而优先于Ti膜层中的Ti被氧化形成类似于纳米针、纳米棒状的SnO2。随着氧化的进行，不断生长形成的纳米针、纳米棒状的SnO2优先沿着其纵向方向穿过所述Ti膜层，为该Ti膜层中的Ti的氧化提供了一个类似于生长模板的条件，使得Ti膜层中的部分Ti继而也发生氧化形成TiO2。
以上述方法形成的结合层13的表面具有微米-纳米的乳突结构，可使得后续的疏水层15牢固地结合于结合层13的表面，使该疏水层15的机械稳定性增强，达到更好的疏水效果。
在所述结合层13形成之后，开启一Si靶的电源，调整真空室的真空度为3～4×10-5torr，以氩气为工作气体，设置Ar的流量为300～500sccm，对Si靶施加-150～-200V的偏压，以氮气为反应性气体，设置N2的流量为100～200sccm，将真空室温度控制在150～200C，在结合层13的表面沉积一疏水层15，该疏水层15为一Si-N膜层，沉积该疏水层15的时间为20～40min。
应该指出，上述实施方式仅为本发明的较佳实施方式，本领域技术人员还可在本发明精神内做其它变化。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。
Claims (9)
1.一种镀膜件，包括一基材、一催化层、一结合层和一疏水层，所述催化层形成于基材上，所述结合层形成于催化层上，所述疏水层形成于结合层上，其特征在于：该催化层为一Sn膜层，该结合层为一含Ti、Sn、SnO2和TiO2的膜层，该疏水层为一Si-N膜层。
2.如权利要求1所述的镀膜件，其特征在于：所述催化层、结合层和疏水层的厚度范围均为0.5μm～1.0μm。
3.如权利要求1所述的镀膜件，其特征在于：所述基材为金属材料或为玻璃、塑料。
4.一种镀膜件的制作方法，其包括如下步骤：
提供一基材；
在该基材表面磁控溅射一Sn膜层；
在该Sn膜层上磁控溅射一Ti膜层；
对形成有Sn膜层和Ti膜层的基材在真空室中进行热氧化处理，使该二膜层中的部分Sn及部分Ti氧化生成SnO2和TiO2，形成一含Ti、Sn、SnO2和TiO2的结合层；
在该结合层上磁控溅射一疏水层，该疏水层为一Si-N膜层。
5.如权利要求4所述的镀膜件的制作方法，其特征在于：所述热氧化处理的条件为：以加热速度为15-30℃/min，加热至400～700℃，并保温40～90min。
6.如权利要求5所述的镀膜件的制作方法，其特征在于：所述热氧化处理的条件还包括将形成有Sn膜层和Ti膜层的基材置于低氧的状态下，所述低氧状态中氧气的体积百分比含量低于真空室中气体的2％。
7.如权利要求4所述的镀膜件的制作方法，其特征在于：溅射所述Sn膜层以Sn为靶材，对Sn靶施加-100～-200V的偏压，镀膜温度为50～100℃，以氩气为工作气体，其流量设为300～500sccm。
8.如权利要求4所述的镀膜件的制作方法，其特征在于：溅射所述Ti膜层以Ti为靶材，对Ti靶施加-150～-200V的偏压，真空室温度为120～200℃，以氩气为工作气体，其流量为300～500sccm。
9.如权利要求4所述的镀膜件的制作方法，其特征在于：溅射所述疏水层以Si为靶材，对Si靶施加-150～-200V的偏压，真空室温度为150～200℃，以氮气为反应性气体，氮气的流量为100～200sccm；以氩气为工作气体，其流量为300～500sccm。
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