CN102388439B - 多频调整的处理方法 - Google Patents

多频调整的处理方法 Download PDF

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Publication number
CN102388439B
CN102388439B CN201080015441.9A CN201080015441A CN102388439B CN 102388439 B CN102388439 B CN 102388439B CN 201080015441 A CN201080015441 A CN 201080015441A CN 102388439 B CN102388439 B CN 102388439B
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amplitude
plasma
plasma sheath
driving signal
interval
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Chinese (zh)
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CN102388439A (zh
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阿列克谢·马拉赫塔诺夫
艾利克·哈德森
拉金德尔·德辛德萨
安德鲁·拜勒
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201080015441.9A 2009-04-06 2010-04-06 多频调整的处理方法 Active CN102388439B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16698709P 2009-04-06 2009-04-06
US61/166,987 2009-04-06
US12/621,590 US8154209B2 (en) 2009-04-06 2009-11-19 Modulated multi-frequency processing method
US12/621,590 2009-11-19
PCT/US2010/030019 WO2010117969A2 (en) 2009-04-06 2010-04-06 Modulated multi-frequency processing method

Publications (2)

Publication Number Publication Date
CN102388439A CN102388439A (zh) 2012-03-21
CN102388439B true CN102388439B (zh) 2014-03-12

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CN201080015441.9A Active CN102388439B (zh) 2009-04-06 2010-04-06 多频调整的处理方法

Country Status (8)

Country Link
US (1) US8154209B2 (cg-RX-API-DMAC7.html)
EP (1) EP2417625A4 (cg-RX-API-DMAC7.html)
JP (1) JP5636038B2 (cg-RX-API-DMAC7.html)
KR (1) KR101690812B1 (cg-RX-API-DMAC7.html)
CN (1) CN102388439B (cg-RX-API-DMAC7.html)
SG (1) SG174501A1 (cg-RX-API-DMAC7.html)
TW (1) TWI517238B (cg-RX-API-DMAC7.html)
WO (1) WO2010117969A2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
JP2014072272A (ja) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd プラズマエッチング方法およびプラズマエッチング装置
FR3020718B1 (fr) * 2014-05-02 2016-06-03 Ecole Polytech Procede et systeme pour controler des flux d'ions dans un plasma rf.
JP6697372B2 (ja) * 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR102820269B1 (ko) * 2018-04-13 2025-06-12 도쿄엘렉트론가부시키가이샤 공정 플라즈마의 이온 에너지 분포를 제어하기 위한 장치 및 방법
US11217443B2 (en) 2018-11-30 2022-01-04 Applied Materials, Inc. Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates
US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6089181A (en) * 1996-07-23 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
US20070247073A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
JP2008235579A (ja) * 2007-03-20 2008-10-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法

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JPH10150025A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
KR100521120B1 (ko) * 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
JP2000269198A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
DE10326135B4 (de) * 2002-06-12 2014-12-24 Ulvac, Inc. Entladungsplasma-Bearbeitungsanlage
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20030015965A1 (en) * 2002-08-15 2003-01-23 Valery Godyak Inductively coupled plasma reactor
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
US6972524B1 (en) * 2004-03-24 2005-12-06 Lam Research Corporation Plasma processing system control
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6089181A (en) * 1996-07-23 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
US20070247073A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
JP2008235579A (ja) * 2007-03-20 2008-10-02 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US8154209B2 (en) 2012-04-10
WO2010117969A3 (en) 2011-01-13
KR101690812B1 (ko) 2016-12-28
KR20120009441A (ko) 2012-01-31
SG174501A1 (en) 2011-10-28
JP2012523134A (ja) 2012-09-27
EP2417625A4 (en) 2015-12-02
WO2010117969A2 (en) 2010-10-14
TW201126594A (en) 2011-08-01
JP5636038B2 (ja) 2014-12-03
EP2417625A2 (en) 2012-02-15
TWI517238B (zh) 2016-01-11
CN102388439A (zh) 2012-03-21
US20100253224A1 (en) 2010-10-07

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