CN102386340A - 影像显示系统 - Google Patents
影像显示系统 Download PDFInfo
- Publication number
- CN102386340A CN102386340A CN2011100737813A CN201110073781A CN102386340A CN 102386340 A CN102386340 A CN 102386340A CN 2011100737813 A CN2011100737813 A CN 2011100737813A CN 201110073781 A CN201110073781 A CN 201110073781A CN 102386340 A CN102386340 A CN 102386340A
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- Prior art keywords
- layer
- organic
- image display
- display system
- buffer layer
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- 239000000872 buffer Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011368 organic material Substances 0.000 claims description 17
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000005401 electroluminescence Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 6
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 6
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 5
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZVFJWYZMQAEBMO-UHFFFAOYSA-N 1h-benzo[h]quinolin-10-one Chemical compound C1=CNC2=C3C(=O)C=CC=C3C=CC2=C1 ZVFJWYZMQAEBMO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- UPSWHSOSMRAWEH-UHFFFAOYSA-N 2-n,3-n,4-n-tris(3-methylphenyl)-1-n,1-n,2-n,3-n,4-n-pentakis-phenylbenzene-1,2,3,4-tetramine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=C(N(C=3C=CC=CC=3)C=3C=C(C)C=CC=3)C(N(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 UPSWHSOSMRAWEH-UHFFFAOYSA-N 0.000 description 1
- YFCSASDLEBELEU-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene-11,12,15,16,17,18-hexacarbonitrile Chemical compound N#CC1=C(C#N)C(C#N)=C2C3=C(C#N)C(C#N)=NN=C3C3=NN=NN=C3C2=C1C#N YFCSASDLEBELEU-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37968310P | 2010-09-02 | 2010-09-02 | |
US61/379,683 | 2010-09-02 | ||
TW100105946 | 2011-02-23 | ||
TW100105946A TW201212717A (en) | 2010-09-02 | 2011-02-23 | System for displaying images |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102386340A true CN102386340A (zh) | 2012-03-21 |
Family
ID=45770044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011100737813A Pending CN102386340A (zh) | 2010-09-02 | 2011-03-25 | 影像显示系统 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120056208A1 (zh) |
CN (1) | CN102386340A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715358A (zh) * | 2012-10-09 | 2014-04-09 | 东莞万士达液晶显示器有限公司 | 有机发光二极管 |
CN104425739A (zh) * | 2013-09-09 | 2015-03-18 | 三星显示有限公司 | 有机发光显示装置 |
CN108987430A (zh) * | 2017-06-05 | 2018-12-11 | 京东方科技集团股份有限公司 | 一种有机电致发光二极管、阵列基板及制作方法 |
CN110323358A (zh) * | 2019-07-11 | 2019-10-11 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法和发光装置 |
TWI685995B (zh) * | 2013-09-09 | 2020-02-21 | 南韓商三星顯示器有限公司 | 有機發光顯示設備 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201414030A (zh) * | 2012-09-17 | 2014-04-01 | Wintek Corp | 有機發光二極體 |
US9368756B2 (en) * | 2012-10-12 | 2016-06-14 | Samsung Electronics Co., Ltd. | Organic electroluminescence device and method of manufacturing the same |
KR102081209B1 (ko) | 2013-03-26 | 2020-02-26 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법, 및 그 유기 발광 표시 장치의 제조에 사용되는 도너 기판 및 도너 기판 세트 |
CN107134536B (zh) * | 2017-05-10 | 2019-03-01 | 京东方科技集团股份有限公司 | 有机发光二极管及其制造方法、显示面板、显示装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1729726A (zh) * | 2002-12-25 | 2006-02-01 | 株式会社半导体能源研究所 | 发光装置及其制作方法 |
JP2006228573A (ja) * | 2005-02-17 | 2006-08-31 | Sanyo Electric Co Ltd | エレクトロルミネッセンス素子 |
US20060251922A1 (en) * | 2005-05-06 | 2006-11-09 | Eastman Kodak Company | OLED electron-injecting layer |
CN101030621A (zh) * | 2006-03-03 | 2007-09-05 | 株式会社半导体能源研究所 | 发光器件及电子设备 |
CN101055921A (zh) * | 2006-04-12 | 2007-10-17 | 统宝光电股份有限公司 | 有机电致发光元件及显示器和电子装置 |
CN101087013A (zh) * | 2006-06-07 | 2007-12-12 | 三星Sdi株式会社 | 有机发光器件 |
CN101521263A (zh) * | 2008-02-27 | 2009-09-02 | 富士电机控股株式会社 | 微谐振器色变换el元件和使用该元件的有机el显示器 |
CN101694868A (zh) * | 2009-09-29 | 2010-04-14 | 深圳丹邦投资集团有限公司 | 有机发光器件及其光抽取结构的制作方法 |
-
2011
- 2011-03-25 CN CN2011100737813A patent/CN102386340A/zh active Pending
- 2011-04-07 US US13/082,292 patent/US20120056208A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1729726A (zh) * | 2002-12-25 | 2006-02-01 | 株式会社半导体能源研究所 | 发光装置及其制作方法 |
JP2006228573A (ja) * | 2005-02-17 | 2006-08-31 | Sanyo Electric Co Ltd | エレクトロルミネッセンス素子 |
US20060251922A1 (en) * | 2005-05-06 | 2006-11-09 | Eastman Kodak Company | OLED electron-injecting layer |
CN101030621A (zh) * | 2006-03-03 | 2007-09-05 | 株式会社半导体能源研究所 | 发光器件及电子设备 |
CN101055921A (zh) * | 2006-04-12 | 2007-10-17 | 统宝光电股份有限公司 | 有机电致发光元件及显示器和电子装置 |
CN101087013A (zh) * | 2006-06-07 | 2007-12-12 | 三星Sdi株式会社 | 有机发光器件 |
CN101521263A (zh) * | 2008-02-27 | 2009-09-02 | 富士电机控股株式会社 | 微谐振器色变换el元件和使用该元件的有机el显示器 |
CN101694868A (zh) * | 2009-09-29 | 2010-04-14 | 深圳丹邦投资集团有限公司 | 有机发光器件及其光抽取结构的制作方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715358A (zh) * | 2012-10-09 | 2014-04-09 | 东莞万士达液晶显示器有限公司 | 有机发光二极管 |
CN104425739A (zh) * | 2013-09-09 | 2015-03-18 | 三星显示有限公司 | 有机发光显示装置 |
CN104425739B (zh) * | 2013-09-09 | 2018-12-21 | 三星显示有限公司 | 有机发光显示装置 |
TWI685995B (zh) * | 2013-09-09 | 2020-02-21 | 南韓商三星顯示器有限公司 | 有機發光顯示設備 |
CN108987430A (zh) * | 2017-06-05 | 2018-12-11 | 京东方科技集团股份有限公司 | 一种有机电致发光二极管、阵列基板及制作方法 |
CN108987430B (zh) * | 2017-06-05 | 2020-11-03 | 京东方科技集团股份有限公司 | 一种有机电致发光二极管、阵列基板及制作方法 |
US11114638B2 (en) | 2017-06-05 | 2021-09-07 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Light-emitting diode, array substrate, and method of making the same |
CN110323358A (zh) * | 2019-07-11 | 2019-10-11 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法和发光装置 |
WO2021004469A1 (zh) * | 2019-07-11 | 2021-01-14 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法和发光装置 |
Also Published As
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US20120056208A1 (en) | 2012-03-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 518109 Guangdong, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 4, building 1, building Applicant after: Qunkang Technology (Shenzhen) Co., Ltd. Co-applicant after: Chimei Optoelectronics Co., Ltd. Address before: Miaoli County, Taiwan, China Applicant before: Chimei Optoelectronics Co., Ltd. Co-applicant before: Qunkang Technology (Shenzhen) Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: QIMEI ELECTRONIC CO LTD TO: QUNKANG TECHNOLOGY (SHENZHEN) CO., LTD. |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120321 |