CN102386214A - 局部轻掺杂漏注入屏蔽的mosfet静电泄放保护结构 - Google Patents
局部轻掺杂漏注入屏蔽的mosfet静电泄放保护结构 Download PDFInfo
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- CN102386214A CN102386214A CN2010102701188A CN201010270118A CN102386214A CN 102386214 A CN102386214 A CN 102386214A CN 2010102701188 A CN2010102701188 A CN 2010102701188A CN 201010270118 A CN201010270118 A CN 201010270118A CN 102386214 A CN102386214 A CN 102386214A
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CN2010102701188A CN102386214A (zh) | 2010-08-31 | 2010-08-31 | 局部轻掺杂漏注入屏蔽的mosfet静电泄放保护结构 |
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CN2010102701188A CN102386214A (zh) | 2010-08-31 | 2010-08-31 | 局部轻掺杂漏注入屏蔽的mosfet静电泄放保护结构 |
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CN2010102701188A Pending CN102386214A (zh) | 2010-08-31 | 2010-08-31 | 局部轻掺杂漏注入屏蔽的mosfet静电泄放保护结构 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020076876A1 (en) * | 2000-12-15 | 2002-06-20 | Ming-Dou Ker | Method for manufacturing semiconductor devices having ESD protection |
CN1567561A (zh) * | 2003-06-20 | 2005-01-19 | 矽统科技股份有限公司 | 静电放电保护结构及其制程 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020076876A1 (en) * | 2000-12-15 | 2002-06-20 | Ming-Dou Ker | Method for manufacturing semiconductor devices having ESD protection |
CN1567561A (zh) * | 2003-06-20 | 2005-01-19 | 矽统科技股份有限公司 | 静电放电保护结构及其制程 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20120321 |