CN102385928A - 编程电压产生电路及其传输电路 - Google Patents
编程电压产生电路及其传输电路 Download PDFInfo
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- CN102385928A CN102385928A CN2011102574810A CN201110257481A CN102385928A CN 102385928 A CN102385928 A CN 102385928A CN 2011102574810 A CN2011102574810 A CN 2011102574810A CN 201110257481 A CN201110257481 A CN 201110257481A CN 102385928 A CN102385928 A CN 102385928A
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- switch
- program voltage
- pmos transistor
- pmos
- transmission circuit
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Priority Applications (1)
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CN2011102574810A CN102385928A (zh) | 2011-09-01 | 2011-09-01 | 编程电压产生电路及其传输电路 |
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CN2011102574810A CN102385928A (zh) | 2011-09-01 | 2011-09-01 | 编程电压产生电路及其传输电路 |
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CN102385928A true CN102385928A (zh) | 2012-03-21 |
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CN2011102574810A Pending CN102385928A (zh) | 2011-09-01 | 2011-09-01 | 编程电压产生电路及其传输电路 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081459A (en) * | 1997-06-30 | 2000-06-27 | Hyundai Electronics Industries Co., Ltd. | Cell plate voltage generator of a semiconductor memory device |
US20040239399A1 (en) * | 2003-05-30 | 2004-12-02 | Won Sam Kyu | High voltage transfer circuit |
US20070268774A1 (en) * | 2006-05-19 | 2007-11-22 | Jong-Hoon Lee | High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit |
CN101908365A (zh) * | 2010-07-30 | 2010-12-08 | 上海宏力半导体制造有限公司 | 电压产生电路以及存储器 |
US20110128799A1 (en) * | 2009-11-27 | 2011-06-02 | Hynix Semiconductor Inc. | Level shifting circuit and nonvolatile semiconductor memory apparatus using the same |
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2011
- 2011-09-01 CN CN2011102574810A patent/CN102385928A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081459A (en) * | 1997-06-30 | 2000-06-27 | Hyundai Electronics Industries Co., Ltd. | Cell plate voltage generator of a semiconductor memory device |
US20040239399A1 (en) * | 2003-05-30 | 2004-12-02 | Won Sam Kyu | High voltage transfer circuit |
US20070268774A1 (en) * | 2006-05-19 | 2007-11-22 | Jong-Hoon Lee | High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit |
US20110128799A1 (en) * | 2009-11-27 | 2011-06-02 | Hynix Semiconductor Inc. | Level shifting circuit and nonvolatile semiconductor memory apparatus using the same |
CN101908365A (zh) * | 2010-07-30 | 2010-12-08 | 上海宏力半导体制造有限公司 | 电压产生电路以及存储器 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120321 |