CN102385921B - For labeling method and the initial method of a nonvolatile memory array - Google Patents
For labeling method and the initial method of a nonvolatile memory array Download PDFInfo
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- CN102385921B CN102385921B CN201010272997.8A CN201010272997A CN102385921B CN 102385921 B CN102385921 B CN 102385921B CN 201010272997 A CN201010272997 A CN 201010272997A CN 102385921 B CN102385921 B CN 102385921B
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Abstract
The present invention proposes a kind of labeling method for a nonvolatile memory array and initial method, and this nonvolatile memory array comprises multiple storage unit, and each storage unit respectively comprises multiple byte.This labeling method comprises the following step: judge that the byte of respectively this storage unit can normally access; And write one is tagged to this storage unit.This initial method comprises the following steps: to read the mark of respectively this storage unit; Judge this marker character unification preset value; Recording mark meets in these storage unit to one identification tables of preset value; And these marks of cancellation.
Description
Technical field
The present invention relates to a kind of labeling method and initial method, particularly a kind of labeling method for a nonvolatile memory and initial method.
Background technology
Generally speaking, nonvolatile memory array (non-volatilememoryarray) is made up of multiple block (block), each block comprises multiple paging (page) respectively, and each paging comprises again multiple byte (byte) respectively.
Existing memory array is the unit write using paging as data, and is the unit of data erase with block.Namely refer to, each paging of a block can write data respectively, if but the data of a wherein paging will be wiped time, the data of other pagings of this block need be wiped free of together.Therefore, when a certain paging of block is for abnormal (cannot normally access), this block will be caused cannot to carry out data erase, this block also just should not be used, and to avoid the problem such as data read errors or disappearance.
After a usual memory array is listed in and has manufactured in manufacture end (such as a wafer factory), namely can utilize a proving installation to test or scan this memory array, when in discovery one block when part paging or byte exception, this block can be written into damage mark (badmark).After testing, if normal block ratio is higher than customer requirement, it is more than 90% that such as client is defined as normal blocks ratio for non-defective unit, and the normal blocks of this memory array is up to 95%, then manufacture end and just can be classified as non-defective unit, and by memory array shipment to application end (or other users end).This memory array then can be connected with a controller (or other firmwares) by application end.Controller can go to scan and read which block damage mark, and to judge which block should not use, this action is called initialization.
But " damaging mark to the block write of exception " at least has following disappearance:
1. existing detection mode is, if local paging or byte are damaged, will judge that overall block is as abnormal, and damage mark to its write.Being judged as exception due to block integral and being given up, also cannot be used making paging that in block, other can normally access or byte.Thus, memory array may be made cannot to meet the standard of non-defective unit; Even if memory array is finally still judged as meet standard, also by because give up other paging that can normally access or bytes, cause utilization rate on the low side.
2., when block is judged as extremely and need writes damage mark, may damage because of write the byte marked, be by chance the byte of exception, causes this write activity to lose efficacy.Therefore, when controller access first this be determined abnormal block time because cannot read damage mark, it is normal for judging this block on the contrary by accident.
If 3. store the problem of byte generation data degradation (dataloss) damaging mark, this damage is marked and disappears, so also can cause controller because read less than damage mark, and having judged this by accident, to be originally judged as abnormal block be normal.
4. hold rigorous not when testing if manufactured or have error, so that the byte of block some exception interior, but still being mistaken for and can normally accessing, so there is no be written into and damage mark.Controller also because of reading less than damage mark, and can employ and be mistaken for normal region afterwards.
5. may there is cross-talk (crosstalk) effect between byte, when damage mark write to be judged as in abnormal block time, also relatedly other bytes are affected, if this byte is by chance the mark position in advance of other blocks, then controller can be caused to judge this normal block by accident for abnormal.
In view of this, providing a kind of method improving the above-mentioned disappearance of at least one, is industry problem demanding prompt solution.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of labeling method for nonvolatile memory array and initial method, during to improve the byte access situation testing and mark this storage unit (or claiming data write unit), and issuable erroneous judgement.
Another object of the present invention is to provide a kind of labeling method for nonvolatile memory array and initial method, carry out judging and marking for each paging by detection unit is contracted to, therefore whole block can not be given up because of the damage of partial bytes, the memory module utilization rate that can promote.
Another object of the present invention is to provide a kind of labeling method for nonvolatile memory array and initial method, and it is for normal paging, writes different correspondence markings respectively.When controller carries out initialization to it, can obtain comparison result more accurately, the situation reducing erroneous judgement occurs.
For achieving the above object, present invention is disclosed a kind of labeling method for a nonvolatile memory, this nonvolatile memory array comprises multiple storage unit, respectively this storage unit comprises multiple byte, and this labeling method comprises the following steps: to judge that one of them these byte had of these storage unit are as can normally access; And write one is tagged to this storage unit.
Present invention further teaches a kind of initial method for a nonvolatile memory array, this nonvolatile memory array comprises multiple storage unit, respectively this storage unit comprises multiple byte, wherein, respectively this storage unit has a mark, it is judged as in response to these bytes in each this storage unit and normally can accesses and write, and this initial method comprises the following steps: to read this mark of respectively this storage unit; Judge this marker character unification preset value; Recording this mark meets in respectively this storage unit to one identification table of this preset value; And these marks of cancellation.
For making above-mentioned purpose, technical characteristic and advantage become apparent, be hereafter described with reference to the accompanying drawings with preferred embodiment.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the present invention for the labeling method of nonvolatile memory array.
Fig. 2 is the schematic diagram of nonvolatile memory array of the present invention.
Fig. 3 is the schematic diagram that this nonvolatile memory array and proving installation couple.
Fig. 4 is the schematic diagram after this nonvolatile memory array mark.
Fig. 5 is the process flow diagram of the present invention for the initial method of nonvolatile memory array.
Fig. 6 is the schematic diagram that this nonvolatile memory array and a controller couple.
Fig. 7 is the method flow diagram of the present invention for another preferred embodiment of the initial method of nonvolatile memory array.
Reference numeral explanation
1 nonvolatile memory
11 blocks
111,111A, 111B storage unit
2 proving installations
21 question blanks
3 controllers
31 identify table
Embodiment
Referring to shown in Fig. 1, is the preferred embodiment of the labeling method for a nonvolatile memory array of the present invention.Wherein, the volatile memory array that this labeling method is applied comprises multiple storage unit (or claiming data write unit), and each storage unit comprises multiple byte (byte).
Incorporated by reference to consulting shown in Fig. 2, illustrate for a nonvolatile memory array 1.This nonvolatile memory array 1 contains multiple storage unit 111, and each storage unit 111 comprises multiple byte.For example, each storage unit 111 of the present embodiment can be a paging (page), and each paging comprises 4224 bytes, and 128 paging (P
1~ P
128) capable of being combined be defined as a block (block) 11, and 4096 block (B
1~ B
4096) then form this nonvolatile memory array 1 further.In other words, this nonvolatile memory array 1 comprises 4096x128=524288 storage unit 111 (paging) altogether.
Incorporated by reference to consulting shown in Fig. 3, this nonvolatile memory array 1 can couple with a proving installation 2, and each step of this labeling method can be realized by this proving installation 2, but is not limited thereto.Each step will explain as follows:
First execution step S101, tests this nonvolatile memory array 1, and judges these storage unit 111 one of them, and whether its these bytes had can normally access.In detail, data first write in these bytes of this storage unit 111, read these data more afterwards, if the data content of this reading does not change or disappears, then these bytes of this storage unit 111 can be judged as normally accessing.In other words, data cannot write or after data write, content can change or disappear, and can judge that these bytes of this storage unit 111 cannot normally access.
If when step S101 is judged as normally accessing, then perform step S103, write one is tagged to this storage unit 111.In detail, a preset value (or claiming preset content) is write in the part or all of byte of this storage unit 111.
If when step S101 is judged as normally accessing, or when step S103 executes, then performs step S105, judge whether to still have other storage unit 111 not perform step S101; If any, just for judgement and the write step of other storage unit 111 repeated execution of steps S101 and step S103, until all storage unit 111 complete all; As no, represent whole storage unit 111 all executed cross step S101 and step S103, this labeling method can complete.
This proving installation 2 according to above test result, can be added up the quantity of the storage unit 111 that can normally use, and then calculates the In-commission Rate of this nonvolatile memory array 1, assess it and whether can meet standard.In addition, also can produce or export a question blank 21, this question blank 21 can record the address of tool these storage unit 111 markd, and these mark the information such as the corresponding preset values of institute.
It is worth mentioning that, the preset value of these marks in all storage unit 111, can be mutually the same, also can be distinguishable from one another.In preferred embodiment of the present invention, these marks are distinguishable from one another in response to the difference of storage unit 111, and easily say it, in step s 103, different storage unit 111 can be written into the mark of different preset value.Mark distinguishable from one another can corresponding to the address of storage unit 111, for example, the mark preset value of the 100th storage unit of the 1st block 11 can be 0001100, the mark preset value of the 15th storage unit of the 3rd block can be 0003015, thus, each storage unit 111 all has the mark of a uniqueness, if desired follow-up inspection, then can ask the storage unit reading certain address, and whether its reading data of comparison are consistent with address.Or, the preset value of mark also can corresponding to the serial number of storage unit 111, so the mark preset value of the 100th of the 1st block the storage unit can be 000100, the mark preset value of the 15th storage unit 111 of the 3rd block 11 can be 000271, by that analogy.Should be noted that, the method for above distinguishing mark is only illustration, and those skilled in the art should use other mark modes easily, and this is not restricted.
Refer to shown in Fig. 4, after implementing aforesaid labeling method, in this nonvolatile memory array 1, judge that the storage unit 111 that can normally access will have mark, and judge that the storage unit 111 that can not normally access will not have mark.For convenience of explanation afterwards, the storage unit 111 that these can normally access is numbered 111A in addition, and the storage unit 111 that these can not normally access is numbered 111B in addition.
Then the initial method for a nonvolatile memory array of the present invention can be implemented with markd nonvolatile memory array 1, to recheck band these storage unit 111A markd, confirm whether these storage unit 111A have the existing described disappearance such as data degradation, crosstalk effect, access status misjudgment.
Refer to shown in Fig. 5, be used for the preferred embodiment of the initial method of a nonvolatile memory array for the present invention.Wherein, the volatile memory array applied of initial method is for the nonvolatile memory array 1 shown in previous embodiment and Fig. 4.
Incorporated by reference to consulting Fig. 6, this nonvolatile memory array 1 can couple with a controller 3, and each step of this initial method can be performed by this controller 3, but is not limited thereto.In addition, this controller 3 can read the question blank 21 that this proving installation 2 produces, with information such as the preset values of the address and mark that obtain these storage unit 111A.Each step of this initial method will explain as follows:
First perform step S501, read the mark of this storage unit 111A.Then perform S503, judge that this marks whether to meet a preset value.Wherein, this preset value record can be stored in question blank 21 in advance, or is decided in its sole discretion by controller 3.In addition, each storage unit 111A can have common mark preset value, or has mark preset value unique and distinguishable from one another.
If the reading content of this mark does not meet corresponding preset value, represent that this storage unit 111A still has data degradation or data are difficult to the problems such as write, should not be used.In other words, this storage unit 111A is mistaken for normally to access, but reality is extremely, should not be used.It should be noted that, if this storage unit 111A reads less than any mark, expressive notation disappears, then this storage unit 111A also can be regarded as mark and not meet preset value.That is, only meet corresponding preset value in the reading content of mark, then represent that storage unit 111A should normally access, can be used.Above technological means is because technological means of the present invention marks for normal storage unit.
When the mark of storage unit 111A be judged meet preset value time, then then perform step S505, record in this storage unit 111A to identification table 31, namely the address of this storage unit 111A is recorded in this identification table 31.This identification table 31 can be arranged in controller 3, or is arranged in firmware that other and controller 3 couple.After step S505 terminates, then perform step S507, the mark of this storage unit 111A of cancellation, makes all data of this storage unit 111A be emptied.
When in step S503, the marker for judgment of storage unit 111A does not meet preset value, or when step S507 executes, step S509 then will judge whether that other storage unit 111A do not perform in addition; If any, then above-mentioned steps is repeated to it, to judge whether the reading content of the mark of other storage unit 111A meets the corresponding preset value of this storage unit 111A; As no, represent that whole storage unit 111A executeds is complete, this initial method can complete.
After this initial methods completes, the address information that multiple mark meets the storage unit 111A of preset value in this identification table 31, can be recorded.Be not recorded in storage unit in identification table 31 111 (comprising the storage unit 111A that unmarked storage unit 111B and mark do not meet preset value), can not be used by controller 3 (or other firmwares).
Referring to shown in Fig. 7, is the second preferred embodiment of the initial method for a nonvolatile memory array of the present invention.The initial method difference part of this second embodiment and the first embodiment is: increase by a step S511 more, and therefore other similar portion will it will not go into details.
When step S511 performs, the address of whole storage unit 111 (comprise unmarked storage unit 111B, storage unit 111A that storage unit 111A that mark meets preset value and mark do not meet preset value) will be defined again.Namely, be recorded in the normal memory cell 111A in identification table 31, redefinable block, the storage unit 111A that unmarked storage unit 111B and mark do not meet preset value be then rejected need not, or be defined within can not by the block 11 that uses.Easy speech it, all spendable blocks 11, the storage unit 111A meeting preset value by mark is defined to be formed.
So, the storage unit 111A that unmarked storage unit 111B and mark do not meet preset value can concentrate in a few block 11, reduces the number of non-serviceable block 11 by this.
In addition, it should be noted that, in the first or second embodiment of above-mentioned initial method, step S507 can make into perform after step S509, is once all eliminated by these marks.
Comprehensively above-mentioned, the labeling method for a nonvolatile memory array of the present invention and initial method have various features, are listed below:
1., using paging as the unit detected, compared to prior art using block as unit, utilization rate can be improved.
2. be judged as that the storage unit that can normally access can be written into mark more smoothly, and not easily have the problem of data degradation, therefore the present invention marks for the storage unit that can normally access, and the problem that existing mark is difficult to write and mark disappears can be enhanced.
3. time as got the wrong sow by the ear poor or not rigorous in labeling process, so that the storage unit of some abnormal (can not normally access) is judged as normal access.But the storage unit of exception is comparatively difficult to be written into mark, even if mark is written with, abnormal storage unit easily has the problem of data degradation, therefore marks evanescence or change.Afterwards during initialization, be mistaken for the abnormal memory cell that can normally access and can not be read mark, or read the mark not meeting preset value.So, the abnormal memory cell of erroneous judgement can be found, and is not used.
4., when the preset value of these marks is distinguishable from one another, the disappearance produced because of crosstalk effect can be improved.In detail, if when mark writes to the storage unit that can normally access, because crosstalk effect also writes to certain storage unit by mistake, but the write content due to mark is according to the preset value corresponding to the storage unit that can normally access, afterwards during initialization, even if this storage unit write has mark by mistake, can not meet the corresponding preset value of this storage unit by mistake write because of the reading content of mark yet, and do not used.
5. the composition of block is redefined according to identification table, non-serviceable storage unit is given up, and redefine block with spendable storage unit, so can improve the utilization rate (number of the block that can use is relative to the number of whole block) of nonvolatile memory.
The above embodiments are only used for exemplifying enforcement aspect of the present invention, and explain technical characteristic of the present invention, are not used for limiting protection category of the present invention.Those skilled in the art the arrangement of unlabored change or isotropism can all belong to the scope that the present invention advocates, protection scope of the present invention should be as the criterion with claim of the present invention.
Claims (5)
1. the initial method for a nonvolatile memory array, this nonvolatile memory array comprises multiple storage unit, respectively this storage unit comprises multiple byte, wherein, respectively this storage unit has a mark, it is judged as in response to these bytes in each this storage unit and normally can accesses and write, and this initial method comprises the following steps:
Read this mark of respectively this storage unit;
Judge this marker character unification preset value;
Recording this mark meets in respectively this storage unit to one identification table of this preset value; And
These marks of cancellation.
2. initial method as claimed in claim 1, wherein this nonvolatile memory array is connected to a controller.
3. initial method as claimed in claim 1, wherein this recording step is an address of recording respectively this storage unit.
4. initial method as claimed in claim 1, wherein these marks are distinguishable from one another.
5. initial method as claimed in claim 1, also comprises the following steps:
Wherein several definition of these storage unit be recorded in this identification table are formed at a block.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010272997.8A CN102385921B (en) | 2010-09-06 | 2010-09-06 | For labeling method and the initial method of a nonvolatile memory array |
| CN201510788405.0A CN105427885B (en) | 2010-09-06 | 2010-09-06 | Marking method for a non-volatile memory array |
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| CN201010272997.8A CN102385921B (en) | 2010-09-06 | 2010-09-06 | For labeling method and the initial method of a nonvolatile memory array |
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| CN201510788405.0A Division CN105427885B (en) | 2010-09-06 | 2010-09-06 | Marking method for a non-volatile memory array |
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| CN102385921B true CN102385921B (en) | 2015-12-16 |
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| CN201510788405.0A Active CN105427885B (en) | 2010-09-06 | 2010-09-06 | Marking method for a non-volatile memory array |
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| CN101770427A (en) * | 2009-01-07 | 2010-07-07 | 芯邦科技（深圳）有限公司 | Method and device for utilizing flash memory space |
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| CN101770427A (en) * | 2009-01-07 | 2010-07-07 | 芯邦科技（深圳）有限公司 | Method and device for utilizing flash memory space |
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| CN105427885A (en) | 2016-03-23 |
| CN105427885B (en) | 2022-07-26 |
| CN102385921A (en) | 2012-03-21 |
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