CN102376772A - Vertical diode and processing method thereof - Google Patents
Vertical diode and processing method thereof Download PDFInfo
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- CN102376772A CN102376772A CN2010102481703A CN201010248170A CN102376772A CN 102376772 A CN102376772 A CN 102376772A CN 2010102481703 A CN2010102481703 A CN 2010102481703A CN 201010248170 A CN201010248170 A CN 201010248170A CN 102376772 A CN102376772 A CN 102376772A
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CN2010102481703A CN102376772A (en) | 2010-08-05 | 2010-08-05 | Vertical diode and processing method thereof |
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CN2010102481703A CN102376772A (en) | 2010-08-05 | 2010-08-05 | Vertical diode and processing method thereof |
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CN102376772A true CN102376772A (en) | 2012-03-14 |
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CN2010102481703A Pending CN102376772A (en) | 2010-08-05 | 2010-08-05 | Vertical diode and processing method thereof |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885542A (en) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same |
US20080210922A1 (en) * | 2006-12-19 | 2008-09-04 | Samsung Electronics Co., Ltd | Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same |
CN101465383A (en) * | 2008-12-30 | 2009-06-24 | 中国科学院上海微系统与信息技术研究所 | Schottky diode and manufacturing method thereof, method for manufacturing electric resistance transition memory |
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2010
- 2010-08-05 CN CN2010102481703A patent/CN102376772A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885542A (en) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same |
US20080210922A1 (en) * | 2006-12-19 | 2008-09-04 | Samsung Electronics Co., Ltd | Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same |
CN101465383A (en) * | 2008-12-30 | 2009-06-24 | 中国科学院上海微系统与信息技术研究所 | Schottky diode and manufacturing method thereof, method for manufacturing electric resistance transition memory |
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Legal Events
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C06 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121119 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121119 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C12 | Rejection of a patent application after its publication | ||
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Application publication date: 20120314 |