CN102376772A - Vertical diode and processing method thereof - Google Patents
Vertical diode and processing method thereof Download PDFInfo
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- CN102376772A CN102376772A CN2010102481703A CN201010248170A CN102376772A CN 102376772 A CN102376772 A CN 102376772A CN 2010102481703 A CN2010102481703 A CN 2010102481703A CN 201010248170 A CN201010248170 A CN 201010248170A CN 102376772 A CN102376772 A CN 102376772A
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Abstract
The invention provides a vertical diode, which comprises a n-type silicon substrate, a silicon oxide groove, and an n-type silicon carbide layer, a p-type polycrystalline silicon layer and a phase change material layer which are arranged in the silicon oxide groove from bottom to top. The invention also provides a processing method of the vertical diode. The processing method sequentially comprises the following steps of: forming the n-type silicon substrate; forming the silicon oxide layer on the n-type silicon substrate and etching the silicon oxide groove in the silicon oxide layer; depositing the n-type silicon carbide layer on the n-type silicon substrate in the silicon oxide groove; depositing the p-type polycrystalline silicon layer on the n-type silicon carbide layer; and depositing the phase change material layer on the p-type polycrystalline silicon layer. In the vertical diode, the n-type silicon substrate, the n-type silicon carbide layer, the p-type polycrystalline silicon layer and the phase change material layer form the vertical diode with better leakage current and current efficiency performance. The processing method of the vertical diode is suitable for processing and manufacturing the vertical diode.
Description
Technical field
The present invention relates to the ic manufacturing technology field, be specifically related to a kind of vertical diode with and processing method.
Background technology
Vertical diode (vertical diode) often is used among dynamic randon access device DRAM, non-volatile magnetic RAM MRAM, resistance nonvolatile memory RRAM and the phase transformation nonvolatile memory PCRAM as high density memory cells.The structure of vertical diode is as shown in Figure 1: in the silica groove in the silicon oxide layer 102 above n type silicon substrate 101, form n type deposition silicon layer 103 from the bottom to top respectively, p type deposition silicon layer 104 and GST layer 105.GST in the GST layer 105 wherein is meant germanium-antimony-tellurium material (GexSbyTez).
Above-mentioned vertical diode structure of the prior art can not satisfy the requirement for high density storage and low energy consumption that improves day by day.Specifically, along with constantly reducing of physical dimension, people for the leakage current of vertical diode reduce and the requirement of the increase of current efficiency is all improving constantly.
Summary of the invention
In view of this, main purpose of the present invention is to the leakage current of vertical diode of the prior art and the technical problem that current efficiency can not satisfy the further needs of memory cell, and a kind of new-type vertical diode is provided.
And then, a kind of processing method of vertical secondary of the present invention is proposed.
For achieving the above object, technical scheme provided by the invention is following:
A kind of vertical diode comprises:
N type silicon substrate;
Silica groove, said silica groove be arranged in the silicon oxide layer of said n type silicon substrate top, vertically run through said silicon oxide layer; And
In said silica groove, be provided with from the bottom to top:
N type silicon carbide layer;
P type polysilicon layer;
Phase-change material layers.
Preferably, the phase-change material in the said phase-change material layers is GST.
Preferably, may further comprise the steps:
Mold n type silicon substrate, on this n type silicon substrate, mold silicon oxide layer, and in this silicon oxide layer, etch the silica groove, this silica groove vertically runs through said silicon oxide layer;
Deposit goes out n type silicon carbide layer on the n type silicon substrate in said silica groove;
Deposit goes out p type polysilicon layer on said n type silicon carbide layer;
Deposit goes out phase-change material layers on said p type polysilicon layer.
Preferably, the phase-change material that adopts during said sediment phase change material layer is GST.
Preferably, step deposit on the said n type silicon carbide layer go out p type polysilicon layer and on said p type polysilicon layer deposit go out between phase-change material layers two steps and also be provided with, deposit is gone out the step that p type polysilicon layer heats.
Vertical diode of the present invention has following beneficial effect:
Vertical diode of the present invention utilizes n type silicon substrate, n type silicon carbide layer, p type polysilicon layer and phase-change material to constitute leakage current and the better vertical diode of current efficiency performance.The processing method of vertical diode of the present invention is suitable for the processing and the manufacturing of above-mentioned vertical diode.
Description of drawings
Fig. 1 is the vertical cross-section structural representation of vertical diode of the prior art;
Fig. 2 is the vertical cross-section structural representation of a kind of embodiment of vertical diode of the present invention;
Fig. 3 a-3e is the work flow sketch map of the vertical diode of embodiment shown in Figure 2;
Fig. 4 a-4c be embodiment shown in Figure 2 vertical diode in the course of the work can be with principle schematic, wherein Fig. 4 a is the energy band diagram during making alive not, the energy band diagram when Fig. 4 b is positive pressurization, Fig. 4 c are the energy band diagrams of reverse pressurization;
Reference numeral among the figure is expressed as:
101,201,301-n type silicon substrate; 102,202, the 302-silicon oxide layer; 203,303-n type silicon carbide layer; 204,304-p type polysilicon layer; 105,205, the 305-GST layer; 103-n type deposition silicon layer; 104-p type deposition silicon layer.
Embodiment
The invention provides a kind of vertical diode, comprising: n type silicon substrate; Silica groove, said silica groove are arranged in the silicon oxide layer of said n type silicon substrate top, vertically run through said silicon oxide layer; In said silica groove, be provided with from the bottom to top: n type silicon carbide layer, p type polysilicon layer and phase-change material layers.
The present invention also provides a kind of processing method of said vertical diode, may further comprise the steps in order:
(a), mold n type silicon substrate, on this n type silicon substrate, mold silicon oxide layer, and in this silicon oxide layer, etch the silica groove, this silica groove vertically runs through said silicon oxide layer;
(b), deposit goes out n type silicon carbide layer on the n type silicon substrate in the silica groove;
(c), deposit goes out p type polysilicon layer on the n type silicon carbide layer that in step (b), obtains;
(d), deposit goes out phase-change material layers on the p type polysilicon layer that in step (c), obtains.
Vertical diode of the present invention utilizes n type silicon substrate, n type silicon carbide layer, p type polysilicon layer and phase-change material to constitute leakage current and the better vertical diode of current efficiency performance.The processing method of vertical diode of the present invention is suitable for the processing and the manufacturing of above-mentioned vertical diode.
For make the object of the invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Embodiment 1
As shown in Figure 2, a kind of vertical diode of present embodiment comprises: n type silicon substrate 201; Be arranged in the silica groove of said n type silicon substrate 201 top silicon oxide layers 202.The vertical diode of present embodiment also comprises: be arranged in the said silica groove, be provided with from the bottom to top: n type silicon carbide layer 203, p type polysilicon layer 204 and phase-change material layers GST layer 205.
The operation principle of diode is according to shown in Fig. 4 a-4c: when there is forward voltage bias in the external world; But the effect of disappearing mutually of external electrical field and built-in field makes the dissufion current increase of charge carrier cause forward current; Shown in Fig. 4 b, electronics e has been flowed to the left side of figure by the right side of figure.
When there is the reverse voltage biasing in the external world; External electrical field and built-in field are further strengthened; Be formed on the reverse saturation current that has nothing to do with the reverse bias voltage value in certain reverse voltage range, promptly shown in Fig. 4 c, electronics can't be by the left side of figure right side flow graph in certain reverse voltage range.
Vertical diode of the present invention utilizes n type silicon substrate, n type silicon carbide layer, p type polysilicon layer and phase-change material to constitute leakage current and the better vertical diode of current efficiency performance.
Fig. 3 a-3e has shown the processing process of above-mentioned vertical diode shown in Figure 2, and it specifically may further comprise the steps:
(1), mold n type silicon substrate 301, above this n type silicon substrate, mold silicon oxide layer 302, and in said silicon oxide layer 302, etch the silica groove, this silica groove vertically runs through said silicon oxide layer 302, referring to Fig. 3 a and Fig. 3 b;
(2), deposit goes out n type silicon carbide layer 303 on the n type silicon substrate 301 in the silica groove, referring to Fig. 3 c;
(3), deposit goes out p type polysilicon layer 304 on the n type silicon carbide layer that in step (2), obtains, referring to Fig. 3 d;
At this moment, can also go out p type polysilicon layer to deposit and heat, so that this illuvium is more firm.
(4), deposit goes out phase-change material layers GST layer 305 on the p type polysilicon layer that in step (3), obtains, referring to Fig. 3 e.
The processing method of vertical diode of the present invention is suitable for the processing and the manufacturing of above-mentioned vertical diode.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (5)
1. a vertical diode is characterized in that, comprising:
N type silicon substrate;
Silica groove, said silica groove be arranged in the silicon oxide layer of said n type silicon substrate top, vertically run through said silicon oxide layer; And
In said silica groove, be provided with from the bottom to top:
N type silicon carbide layer;
P type polysilicon layer;
Phase-change material layers.
2. vertical diode according to claim 1 is characterized in that, the phase-change material in the said phase-change material layers is GST.
3. the processing method of the said vertical diode of claim 1 is characterized in that, may further comprise the steps:
Mold n type silicon substrate, on this n type silicon substrate, mold silicon oxide layer, and in this silicon oxide layer, etch the silica groove, this silica groove vertically runs through said silicon oxide layer;
Deposit goes out n type silicon carbide layer on the n type silicon substrate in said silica groove;
Deposit goes out p type polysilicon layer on said n type silicon carbide layer;
Deposit goes out phase-change material layers on said p type polysilicon layer.
4. processing method according to claim 3 is characterized in that, the phase-change material that adopts during said sediment phase change material layer is GST.
5. processing method according to claim 3; It is characterized in that; Step deposit on the said n type silicon carbide layer go out p type polysilicon layer and on said p type polysilicon layer deposit go out between phase-change material layers two steps and also be provided with, deposit is gone out the step that p type polysilicon layer heats.
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| CN2010102481703A CN102376772A (en) | 2010-08-05 | 2010-08-05 | Vertical diode and processing method thereof |
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| CN2010102481703A CN102376772A (en) | 2010-08-05 | 2010-08-05 | Vertical diode and processing method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885542A (en) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same |
| US20080210922A1 (en) * | 2006-12-19 | 2008-09-04 | Samsung Electronics Co., Ltd | Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same |
| CN101465383A (en) * | 2008-12-30 | 2009-06-24 | 中国科学院上海微系统与信息技术研究所 | Schottky diode and manufacturing method thereof, method for manufacturing electric resistance transition memory |
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2010
- 2010-08-05 CN CN2010102481703A patent/CN102376772A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885542A (en) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same |
| US20080210922A1 (en) * | 2006-12-19 | 2008-09-04 | Samsung Electronics Co., Ltd | Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same |
| CN101465383A (en) * | 2008-12-30 | 2009-06-24 | 中国科学院上海微系统与信息技术研究所 | Schottky diode and manufacturing method thereof, method for manufacturing electric resistance transition memory |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121119 |
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Effective date of registration: 20121119 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120314 |