CN102361015B - A kind of deep hole morphology monitoring method being applied to dual damascene process - Google Patents
A kind of deep hole morphology monitoring method being applied to dual damascene process Download PDFInfo
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- CN102361015B CN102361015B CN201110321377.3A CN201110321377A CN102361015B CN 102361015 B CN102361015 B CN 102361015B CN 201110321377 A CN201110321377 A CN 201110321377A CN 102361015 B CN102361015 B CN 102361015B
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Abstract
The invention provides a kind of deep hole morphology monitoring method being applied to dual damascene process, wherein, described dual damascene process comprises: etachable material layer forms deep hole; Form BARC layer, to cover described deep hole and material layer; Erosion is anti-carved to described BARC layer, to remove the BARC layer outside described deep hole; Described deep hole morphology monitoring method comprises: the diameter at monitoring deep hole top; And monitoring anti-carves the used time of etching technique to described BARC layer.By monitoring the diameter at deep hole top; And monitoring carries out deep hole morphology monitoring to the used time that described BARC layer anti-carves etching technique, thus with the pattern generation deviation of Timeliness coverage deep hole, improve the reliability of deep hole morphology monitoring.In addition, deep hole morphology monitoring method provided by the invention, does not increase any technique in existing dual damascene process, thus can be advantageously applied to existing dual damascene process.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of deep hole morphology monitoring method being applied to dual damascene process.
Background technology
Since integrated circuit comes out, circuit is integrated huge development, and all devices all can be integrated on one piece of silicon substrate, thus integrated circuit is had can interconnect many devices, with low cost, reliability high.Along with further developing of integrated circuit technique, device size is more and more less, and the width of interconnecting line also reduces thereupon, and the consequence caused is that the time of delay of interconnecting line is more and more longer.In integrated circuit last part technology, the important method reducing interconnecting line time of delay uses copper to replace aluminium as interconnection material exactly.Special nature due to copper: the temperature of copper compound volatilization, higher than the serviceability temperature of semiconductor production, causes copper can not realize Wiring technique by dry etching as aluminium.Had an optimistic view of by people at present and the technical scheme be generally used is so-called dual damascene process, this technique is also that copper back segment interconnects the basis be applied.
Utilize dual damascene process to form the interconnection of copper back segment, by dielectric layer deposited, copper-connection lead-in wire is kept apart mutually.Concrete, by opening contact hole selectable on dielectric layer and follow-up method of filling out copper forms copper-connection goes between.Industry is defined as deep hole the contact hole that the ratio of the degree of depth and width (diameter at usual finger-hole top) and depth-to-width ratio are greater than 3 usually, and deep hole is generally realized by the way of dry etching.Inspection item after current deep hole etching is generally only the diameter of monitoring holes, simultaneously can only monitor the diameter at deep hole top (i.e. deep hole expose one end) because the reason of hole depth usually cannot monitor the diameter of deep hole bottom (one end that namely deep hole is hiding), thus whether the pattern that just effectively cannot monitor deep hole has exception, namely differ from the standard pattern meeting technological requirement.
Please refer to Fig. 1, the generalized section of its to be the pattern of deep hole be standard pattern.As shown in Figure 1, such as, standard pattern is cylindrical, and deep hole A is standard pattern, and its top diameter is 0.14 micron, and its base diameter is also 0.14 micron.Please refer to Fig. 2, the generalized section of its to be the pattern of deep hole be a kind of deviation pattern.As shown in Figure 2, the pattern of deep hole B is wide at the top and narrow at the bottom, and its top diameter is similarly 0.14 micron, but its base diameter is not 0.14 micron, but is less than 0.14 micron.Please refer to Fig. 3, the generalized section of its to be the pattern of deep hole be another kind of deviation pattern.As shown in Figure 3, the pattern of deep hole C is up-narrow and down-wide, and its top diameter is similarly 0.14 micron, but its base diameter is not 0.14 micron, but is greater than 0.14 micron.Integrated comparative Fig. 1,2,3 can find out, when required deep hole morphology is standard pattern as shown in Figure 1, and because of various reasons (as equipment, technique or method of operation etc.) when obtaining as shown in Figure 2,3 deviation pattern, with the monitoring method that current deep hole etching is conventional: only monitoring deep hole top diameter, cannot this problem of Timeliness coverage deep hole morphology generation deviation, certainly also just cannot take the precautionary measures effectively.Thus the baneful influence that brings of this deep hole morphology deviation only just can be found in even more late electric performance test at 5 to 10 days, and this just may cause a large amount of properties of product deviations even to need to scrap.Therefore, more reliable, effective deep hole morphology monitoring method is needed to solve this problem.
Summary of the invention
The object of the present invention is to provide a kind of deep hole morphology monitoring method being applied to dual damascene process, can not the problem of pattern generation deviation of Timeliness coverage deep hole to solve existing deep hole morphology detection method.
For solving the problems of the technologies described above, the invention provides a kind of deep hole morphology monitoring method being applied to dual damascene process, wherein, described dual damascene process comprises: etachable material layer forms deep hole; Form BARC layer, and the material controlling to be formed BARC layer is a determined amounts, described BARC layer covers described deep hole and material layer; Erosion is anti-carved to described BARC layer, to remove the BARC layer outside described deep hole; Described deep hole morphology monitoring method comprises: the diameter at monitoring deep hole top; And monitoring anti-carves the used time of etching technique to described BARC layer.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, after etachable material layer forms the step of deep hole, perform the step of the diameter at monitoring deep hole top.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, if the used time anti-carving etching technique to described BARC layer is the standard used time, then described deep hole is standard pattern.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, if be greater than or less than the standard used time to the used time that described BARC layer anti-carves etching technique, then described deep hole is deviation pattern.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, adopt the mode of looking for etching terminal, to control the etch period described BARC layer being anti-carved to erosion.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, the used time of monitoring described BARC layer anti-carves etching technique comprises: the used time of looking for etching terminal described in monitoring.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, described material layer comprises near the quilting material of BARC layer and the primer away from BARC layer.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, if described quilting material is silicon oxide compound, then adopt the signal power change of monitoring to the wavelength of carbon oxygen signal sensitivity to look for etching terminal.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, described silicon oxide compound comprises: TEOS and/or FSG.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, the described wavelength to carbon oxygen signal sensitivity comprises: length is the wavelength of 4835 dusts.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, if described quilting material is silicon-nitrogen compound, then adopt the signal power change of monitoring to the wavelength of carbon nitrogen signal sensitivity to look for etching terminal.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, described silicon-nitrogen compound comprises: SiON and/or SiN.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, the described wavelength to carbon nitrogen signal sensitivity comprises: length is the wavelength of 3865 dusts.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, the depth-to-width ratio of described deep hole is greater than 3.
Optionally, be applied in the deep hole morphology monitoring method of dual damascene process described, the organic antireflecting film of the material of described BARC layer to be carbon atom be main body.
A kind ofly be applied in the deep hole morphology monitoring method of dual damascene process provided by the invention, by monitoring the diameter at deep hole top; And monitoring carries out deep hole morphology monitoring to the used time that described BARC layer anti-carves etching technique, thus with the pattern generation deviation of Timeliness coverage deep hole, improve the reliability of deep hole morphology monitoring.When finding the pattern generation deviation of deep hole, just can correct technique, thus the expansion of guarding against deviations, improve the reliability of production technology.In addition, deep hole morphology monitoring method provided by the invention, does not increase any technique in existing dual damascene process, thus can be advantageously applied to existing dual damascene process.
Accompanying drawing explanation
The generalized section of Fig. 1 to be the pattern of deep hole be standard pattern;
The generalized section of Fig. 2 to be the pattern of deep hole be a kind of deviation pattern;
The generalized section of Fig. 3 to be the pattern of deep hole be another kind of deviation pattern;
Fig. 4 is when the pattern of deep hole is for standard pattern shown in Fig. 1, forms the generalized section of BARC layer process in dual damascene process;
Fig. 5 is when the pattern of deep hole is for a kind of deviation pattern shown in Fig. 2, forms the generalized section of BARC layer process in dual damascene process;
Fig. 6 is when the pattern of deep hole is for another kind of deviation pattern shown in Fig. 3, forms the generalized section of BARC layer process in dual damascene process;
Fig. 7 carries out to the BARC layer shown in Fig. 4 the generalized section that formed after BARC layer anti-carves etching technique;
Fig. 8 carries out to the BARC layer shown in Fig. 5 the generalized section that formed after BARC layer anti-carves etching technique;
Fig. 9 carries out to the BARC layer shown in Fig. 6 the generalized section that formed after BARC layer anti-carves etching technique.
Embodiment
Below in conjunction with the drawings and specific embodiments, a kind of deep hole morphology monitoring method being applied to dual damascene process provided by the invention is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
When utilizing dual damascene process to form the interconnection of copper back segment, first comprise: etachable material layer forms deep hole.Described material layer can be sandwich construction, the hard mask layer that such as can comprise dielectric layer and be positioned on described dielectric layer.The pattern of described deep hole then as in background technology introduce, standard pattern likely desired by formation process, be assumed to be cylindrical in the present embodiment, also likely formed and do not meet the deviation pattern of technological requirement, often pattern wide at the top and narrow at the bottom as shown in Figure 2 or up-narrow and down-wide pattern as shown in Figure 3.
In dual damascene process, after etachable material layer forms deep hole technique, form BARC (BottomAnti-reflectionCoating) layer, the deep hole that described BARC layer covering previous step is formed and material layer.Specifically please refer to Fig. 4 to Fig. 6, wherein, Fig. 4 is when the pattern of deep hole is for standard pattern shown in Fig. 1, forms the generalized section of BARC layer process in dual damascene process; Fig. 5 is when the pattern of deep hole is for a kind of deviation pattern shown in Fig. 2, forms the generalized section of BARC layer process in dual damascene process; Fig. 6 is when the pattern of deep hole is for another kind of deviation pattern shown in Fig. 3, forms the generalized section of BARC layer process in dual damascene process.
Inventor finds, when the material controlling to be formed BARC layer is a determined amounts, then by the material of the BARC layer of this determined amounts, when the deep hole of different-shape, especially, when the pattern of deep hole as shown in Figure 1 to Figure 3, the thickness of the BARC layer of formation is by difference.Concrete, please refer to Fig. 4, when the pattern of deep hole is for standard pattern shown in Fig. 1, the BARC layer 20 formed comprises the Part I 21 filling up deep hole and the Part II 22 be positioned at outside deep hole, now, because deep hole is standard pattern, the thickness of the Part II 22 outside the deep hole obtained also will be standard thickness V1.
Please refer to Fig. 5, when the pattern of deep hole is for a kind of deviation pattern shown in Fig. 2, the BARC layer 20 ' formed comprises the Part I 21 ' filling up deep hole and the Part II 22 ' be positioned at outside deep hole, and the thickness of the Part II 22 ' outside the deep hole obtained is V2.Now, pattern due to deep hole is wide at the top and narrow at the bottom, namely relative to the deep hole of the standard pattern shown in Fig. 1, the volume in the whole hole of the deep hole of the deviation pattern shown in Fig. 2 will be less than the volume of the deep hole of the standard pattern shown in Fig. 1, namely the BARC material that the Part I 21 ' filling up deep hole (the deviation pattern shown in Fig. 2) spends is less than the BARC material that the Part I 21 that fills up deep hole (the standard pattern shown in Fig. 1) spends, thus it is thick by causing the Thickness Ratio being positioned at deep hole (the deviation pattern shown in Fig. 2) Part II 22 ' to be outward positioned at the thickness of deep hole (the standard pattern shown in Fig. 1) Part II 22 outward, namely thickness V2 is greater than standard thickness V1.
Please refer to Fig. 6, when the pattern of deep hole is for another kind of deviation pattern shown in Fig. 3, the BARC layer 20 formed " comprise the Part I 21 filling up deep hole " and the Part II 22 that is positioned at outside deep hole ", the Part II 22 outside the deep hole obtained " thickness be V3.Now, pattern due to deep hole is up-narrow and down-wide, namely relative to the deep hole of the standard pattern shown in Fig. 1, the volume in the whole hole of the deep hole of the deviation pattern shown in Fig. 3 will be greater than the volume of the deep hole of the standard pattern shown in Fig. 1, namely the Part I 21 of deep hole (the deviation pattern shown in Fig. 3) is filled up " the BARC material that spends is greater than the BARC material that the Part I 21 that fills up deep hole (the standard pattern shown in Fig. 1) spends, thus be positioned at cause in deep hole (the deviation pattern shown in Fig. 3) Part II 22 outward " Thickness Ratio to be positioned at the thickness of deep hole (the standard pattern shown in Fig. 1) Part II 22 outward thin, namely thickness V3 is less than standard thickness V1.
In dual damascene process, after formation BARC layer process, need to anti-carve erosion to described BARC layer, to remove the BARC layer outside deep hole.Specifically please refer to Fig. 7 to Fig. 9, wherein, Fig. 7 carries out to the BARC layer shown in Fig. 4 the generalized section that formed after BARC layer anti-carves etching technique; Fig. 8 carries out to the BARC layer shown in Fig. 5 the generalized section that formed after BARC layer anti-carves etching technique; Fig. 9 carries out to the BARC layer shown in Fig. 6 the generalized section that formed after BARC layer anti-carves etching technique.After etching technique being anti-carved to BARC layer by this step, the Part II 22 outside the deep hole shown in Fig. 4 will be removed; Or the Part II 22 ' outside the deep hole shown in Fig. 5; Or the Part II 22 outside the deep hole shown in Fig. 6 ".From the content described above, when in the face of Fig. 4 to Fig. 6 different BARC layer, especially, when different thickness V1, V2 and V3, carry out BARC layer in this step and anti-carve used time needed for erosion by difference.
Given this, inventor proposes a kind of deep hole morphology monitoring method being applied to dual damascene process, and wherein, described dual damascene process comprises: etachable material layer forms deep hole; Form BARC layer, to cover described deep hole and material layer; Erosion is anti-carved to described BARC layer, to remove the BARC layer outside described deep hole; Described deep hole morphology monitoring method comprises: the diameter at monitoring deep hole top; And monitoring anti-carves the used time of etching technique to described BARC layer.Namely monitor except the diameter at deep hole top after forming the step of deep hole at etachable material layer, also the used time that BARC layer anti-carves etching technique is monitored.According to the content described, anti-carve the used time of etching technique according to the BARC layer monitored above, the pattern of deep hole can be judged further, be the deviation pattern that the standard pattern meeting technological requirement does not still meet technological requirement.Thus can the pattern generation deviation of Timeliness coverage deep hole, improve the reliability of deep hole morphology monitoring.Certainly, in other embodiments of the invention, also the thickness that BARC layer is positioned at the Part II outside deep hole can directly be monitored.
In the present embodiment, concrete, if the used time described BARC layer being anti-carved to etching technique is that the standard used time, (the described standard used time was for during for standard thickness V1, carry out BARC layer and anti-carve the etching technique time used, this process time is known a, standard time, namely for the standard pattern of setting, by calculating or available known, the standard time such as experiment.), then described deep hole is standard pattern; If be greater than or less than the standard used time to the used time that described BARC layer anti-carves etching technique, then described deep hole is deviation pattern.Especially, if be greater than standard with constantly to the used time that described BARC layer anti-carves etching technique, shown deep hole is deviation pattern as shown in Figure 2; If be less than standard with constantly to the used time that described BARC layer anti-carves etching technique, shown deep hole is deviation pattern as shown in Figure 3.
Further, adopt the mode of looking for etching terminal, to control the etch period described BARC layer being anti-carved to erosion, and the monitoring that described BARC layer anti-carves the used time of etching technique is comprised: the used time of looking for etching terminal described in monitoring.If the quilting material (hard mask layer 11 as shown in Figures 4 to 6) of described material layer (material layer 10 as shown in Figures 4 to 6) is silicon oxide compound, then the signal power change of monitoring to the wavelength of carbon oxygen signal sensitivity is adopted to look for etching terminal.Described silicon oxide compound comprises: TEOS and/or FSG; The described wavelength to carbon oxygen signal sensitivity comprises: length is the wavelength of 4835 dusts.If the quilting material (hard mask layer 11 as shown in Figures 4 to 6) of described material layer (material layer 10 as shown in Figures 4 to 6) is silicon-nitrogen compound, then the signal power change of monitoring to the wavelength of carbon nitrogen signal sensitivity is adopted to look for etching terminal.Described silicon-nitrogen compound comprises: SiON and/or SiN; The described wavelength to carbon nitrogen signal sensitivity comprises: length is the wavelength of 3865 dusts.Concrete, by the change of supervisory wavelength signal power to determine etching terminal, and etching starts to be the used time of looking for etching terminal to the used time that this wavelength signals power changes.
Look for the mode of etching terminal to control to anti-carve described BARC layer the etch period of erosion owing to adopting, according to thickness V1, the difference of V2 and V3, the time finding etching terminal to spend is also by difference, in the present embodiment, the time finding the etching terminal of the BRAC layer shown in Fig. 5 to spend will be the shortest, be one than the standard used time (the described standard used time for for standard thickness V1 time, carry out BARC layer and anti-carve the etching technique time used, this process time is one known, standard time, namely for the standard pattern of setting, by calculate or experiment etc. available one known, standard time.) short time; Then being the time finding the etching terminal of the BARC layer shown in Fig. 4 to spend, is the time equal with the standard used time; Being finally the time that the etching terminal of the BARC layer shown in Fig. 6 spends, is one than time of standard duration.
In the present embodiment, the depth-to-width ratio of described deep hole is greater than 3, the organic antireflecting film of the material of described BARC layer to be carbon atom be main body.
A kind ofly be applied in the deep hole morphology monitoring method of dual damascene process provided by the invention, by monitoring the diameter at deep hole top; And monitoring carries out deep hole morphology monitoring to the used time that described BARC layer anti-carves etching technique, thus with the pattern generation deviation of Timeliness coverage deep hole, improve the reliability of deep hole morphology monitoring.When finding the pattern generation deviation of deep hole, just can correct technique, thus the expansion of guarding against deviations, improve the reliability of production technology.In addition, deep hole morphology monitoring method provided by the invention, does not increase any technique in existing dual damascene process, thus can be advantageously applied to existing dual damascene process.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (15)
1. be applied to a deep hole morphology monitoring method for dual damascene process, wherein, described dual damascene process comprises:
Etachable material layer forms deep hole;
Form BARC layer, and the material controlling to be formed BARC layer is a determined amounts, described BARC layer covers described deep hole and material layer;
Erosion is anti-carved to described BARC layer, to remove the BARC layer outside described deep hole;
It is characterized in that, described deep hole morphology monitoring method comprises:
The diameter at monitoring deep hole top; And
Monitoring anti-carves the used time of etching technique to described BARC layer.
2. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 1, it is characterized in that, after etachable material layer forms the step of deep hole, perform the step of the diameter at monitoring deep hole top.
3. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 1, it is characterized in that, if the used time anti-carving etching technique to described BARC layer is the standard used time, then described deep hole is standard pattern.
4. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 1, it is characterized in that, if be greater than or less than the standard used time to the used time that described BARC layer anti-carves etching technique, then described deep hole is deviation pattern.
5. the deep hole morphology monitoring method being applied to dual damascene process as described in any one in claims 1 to 3, is characterized in that, adopts the mode of looking for etching terminal, to control the etch period described BARC layer being anti-carved to erosion.
6. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 5, it is characterized in that, the used time of monitoring described BARC layer anti-carves etching technique comprises:
The used time of etching terminal is looked for described in monitoring.
7. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 6, it is characterized in that, described material layer comprises near the quilting material of BARC layer and the primer away from BARC layer.
8. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 7, it is characterized in that, if described quilting material is silicon oxide compound, then adopt the signal power change of monitoring to the wavelength of carbon oxygen signal sensitivity to look for etching terminal.
9. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 8, it is characterized in that, described silicon oxide compound comprises: TEOS and/or FSG.
10. be applied to the deep hole morphology monitoring method of dual damascene process as claimed in claim 8, it is characterized in that, the described wavelength to carbon oxygen signal sensitivity comprises: length is the wavelength of 4835 dusts.
11. deep hole morphology monitoring methods being applied to dual damascene process as claimed in claim 7, is characterized in that, if described quilting material is silicon-nitrogen compound, then adopt the signal power change of monitoring to the wavelength of carbon nitrogen signal sensitivity to look for etching terminal.
12. deep hole morphology monitoring methods being applied to dual damascene process as claimed in claim 11, it is characterized in that, described silicon-nitrogen compound comprises: SiON and/or SiN.
13. deep hole morphology monitoring methods being applied to dual damascene process as claimed in claim 11, it is characterized in that, the described wavelength to carbon nitrogen signal sensitivity comprises: length is the wavelength of 3865 dusts.
14. deep hole morphology monitoring methods being applied to dual damascene process as described in any one in claims 1 to 3, it is characterized in that, the depth-to-width ratio of described deep hole is greater than 3.
15. deep hole morphology monitoring methods being applied to dual damascene process as described in any one in claims 1 to 3, is characterized in that, the organic antireflecting film of the material of described BARC layer to be carbon atom be main body.
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| CN104944366A (en) * | 2014-03-26 | 2015-09-30 | 中国科学院微电子研究所 | Monitoring method for silicon deep hole process |
| CN107316821B (en) * | 2016-04-27 | 2021-03-12 | 中芯国际集成电路制造(上海)有限公司 | Depth stability detection method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455416B1 (en) * | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
| KR20060076067A (en) * | 2004-12-29 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Detection method for not open state of contact hole and device for the same |
| CN101233609A (en) * | 2005-05-02 | 2008-07-30 | 株式会社拓普康 | Method for manufacturing semiconductor device |
| CN101546720A (en) * | 2009-04-09 | 2009-09-30 | 上海集成电路研发中心有限公司 | Method for detecting residue of photoresist in orifice and corresponding method for measuring strip width of orifice |
| CN101958275A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Contact hole forming method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4011832B2 (en) * | 2000-06-30 | 2007-11-21 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455416B1 (en) * | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
| KR20060076067A (en) * | 2004-12-29 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Detection method for not open state of contact hole and device for the same |
| CN101233609A (en) * | 2005-05-02 | 2008-07-30 | 株式会社拓普康 | Method for manufacturing semiconductor device |
| CN101546720A (en) * | 2009-04-09 | 2009-09-30 | 上海集成电路研发中心有限公司 | Method for detecting residue of photoresist in orifice and corresponding method for measuring strip width of orifice |
| CN101958275A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Contact hole forming method |
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