CN102361015A - Deep hole morphology monitoring method applied in dual damascene process - Google Patents
Deep hole morphology monitoring method applied in dual damascene process Download PDFInfo
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- CN102361015A CN102361015A CN2011103213773A CN201110321377A CN102361015A CN 102361015 A CN102361015 A CN 102361015A CN 2011103213773 A CN2011103213773 A CN 2011103213773A CN 201110321377 A CN201110321377 A CN 201110321377A CN 102361015 A CN102361015 A CN 102361015A
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Abstract
The invention provides a deep hole morphology monitoring method applied in a dual damascene process. In the invention, the dual damascene process comprises the following steps of: etching a material layer to form a deep hole, forming a BARC (bottom antireflective coating) layer to cover the deep hole and the material layer, and carrying out reverse etching on the BARC layer to remove the BARC layer outside the deep hole; and the deep hole morphology monitoring method comprises the following steps of: monitoring the diameter of the deep hole top, and monitoring the time for reverse etching process of the BARC layer. The method has the advantages that: the deep hole morphology monitoring is achieved by monitoring the diameter of the deep hole top and monitoring the time for reverse etching process of the BARC layer, thereby the morphology deviation of the deep hole can be found in time and the reliability of the deep hole morphology monitoring is improved; furthermore, according to the deep hole morphology monitoring method provided by the invention, any process is not increased compared with the traditional dual damascene process, thereby the deep hole morphology monitoring method can be applied to the traditional dual damascene process.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of deep hole pattern monitoring method that is applied to dual damascene process.
Background technology
Since integrated circuit came out, circuit is integrated to have had huge development, and all devices all can be integrated on the silicon substrate, thereby made integrated circuit have can to interconnect characteristics such as many devices, with low cost, reliability height.Along with further developing of integrated circuit technique, device size is more and more littler, and the width of interconnecting line also reduces thereupon, and the consequence that causes is that the time of delay of interconnecting line is more and more longer.In integrated circuit last part technology, an important method that reduces interconnecting line time of delay just is to use copper to replace aluminium as interconnection material.Because the special nature of copper: the temperature of copper compound volatilization is higher than the serviceability temperature of semiconductor production, causes copper not realize Wiring technique through dry etching as aluminium.Technical scheme good by people at present and that quilt generally adopts is so-called dual damascene process, and this technology also is the basis that the interconnection of copper back segment is applied.
Utilize dual damascene process to form the interconnection of copper back segment, keep apart the copper-connection lead-in wire mutually through dielectric layer deposited.Concrete, form the copper-connection lead-in wire through selectable opening contact hole and follow-up method of filling out copper on dielectric layer.Usually to be the ratio of the degree of depth and width (diameter at finger-hole top usually) depth-to-width ratio be defined as deep hole greater than 3 contact hole to industry, and deep hole generally is that the way through dry etching realizes.Inspection item after the deep hole etching generally is merely the diameter of monitoring holes at present; Because can't monitoring the diameter of deep hole bottom (being the end that deep hole is hidden) usually, the reason of hole depth can only monitor the diameter of deep hole top (being the end that deep hole exposes) simultaneously; Thereby whether the pattern that just can't monitor deep hole effectively has unusually, promptly differs from the standard pattern of according with process requirements.
Please refer to Fig. 1, its for the pattern of deep hole be the generalized section of standard pattern.As shown in Figure 1, for example, the standard pattern is the cylinder bodily form, and deep hole A is the standard pattern, and its top diameter is 0.14 micron, and its base diameter also is 0.14 micron.Please refer to Fig. 2, its for the pattern of deep hole be a kind of generalized section of deviation pattern.
As shown in Figure 2, the pattern of deep hole B is wide at the top and narrow at the bottom, and its top diameter is similarly 0.14 micron, but its base diameter is not to be 0.14 micron, but less than 0.14 micron.Please refer to Fig. 3, its for the pattern of deep hole be the generalized section of another kind of deviation pattern.As shown in Figure 3, the pattern of deep hole C is up-narrow and down-wide, and its top diameter is similarly 0.14 micron, but its base diameter is not to be 0.14 micron, but greater than 0.14 micron.Comprehensive comparison diagram 1,2,3 can be found out; When required deep hole pattern is a standard pattern as shown in Figure 1; And when (like equipment, technology or method of operation or the like) obtains like Fig. 2, deviation pattern shown in 3 because of various reasons, with present deep hole etching monitoring method commonly used: only monitor the deep hole top diameter; This problem of deep hole pattern generation deviation can't be in time found, also just the precautionary measures effectively can't be taked certainly.Thereby, the baneful influence that this deep hole pattern deviation is brought only 5 to 10 days in addition more the evening electric performance test in just can come to light, this just possibly cause a large amount of properties of product deviations even need scrap.Therefore, need more reliable, effective deep hole pattern monitoring method to solve this problem.
Summary of the invention
The object of the present invention is to provide a kind of deep hole pattern monitoring method that is applied to dual damascene process, can not in time find the problem of the pattern generation deviation of deep hole to solve existing deep hole pattern detection method.
For solving the problems of the technologies described above, the present invention provides a kind of deep hole pattern monitoring method that is applied to dual damascene process, and wherein, said dual damascene process comprises: the etching material layer forms deep hole; Form the BARC layer, to cover said deep hole and material layer; Said BARC layer is anti-carved erosion, to remove the outer BARC layer of said deep hole; Said deep hole pattern monitoring method comprises: the diameter at monitoring deep hole top; And monitoring anti-carves the time spent of etching technique to said BARC layer.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, after the etching material layer forms the step of deep hole, carry out the step of the diameter at monitoring deep hole top.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, if the time spent that said BARC layer is anti-carved etching technique is the standard time spent, then said deep hole is the standard pattern.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, if the time spent that said BARC layer is anti-carved etching technique is greater than or less than the standard time spent, then said deep hole is the deviation pattern.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, adopt the mode of looking for etching terminal, said BARC layer is anti-carved the etch period of erosion with control.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, the time spent that monitoring anti-carves etching technique to said BARC layer comprises: monitor the said time spent of looking for etching terminal.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, said material layer comprises near the quilting material of BARC layer and away from the primer of BARC layer.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process,, then adopt monitoring that strong and weak variation of the signal of the responsive wavelength of carbon oxygen signal looked for etching terminal if said quilting material is a silicon oxide compound.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, said silicon oxide compound comprises: TEOS and/or FSG.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, said the responsive wavelength of carbon oxygen signal is comprised: length is the wavelength of 4835 dusts.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process,, then adopt monitoring that strong and weak variation of the signal of the responsive wavelength of carbon nitrogen signal looked for etching terminal if said quilting material is a silicon-nitrogen compound.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, said silicon-nitrogen compound comprises: SiON and/or SiN.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, said the responsive wavelength of carbon nitrogen signal is comprised: length is the wavelength of 3865 dusts.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, the depth-to-width ratio of said deep hole is greater than 3.
Optional, in the described deep hole pattern monitoring method that is applied to dual damascene process, the material of said BARC layer is that carbon atom is the organic antireflecting film of main body.
In a kind of deep hole pattern monitoring method that is applied to dual damascene process provided by the invention, through the diameter at monitoring deep hole top; And the time spent that monitoring anti-carves etching technique to said BARC layer carry out the monitoring of deep hole pattern, thereby with the pattern generation deviation of timely discovery deep hole, improve the reliability of deep hole pattern monitoring.When finding the pattern generation deviation of deep hole, just can proofread and correct, thereby the expansion of guarding against deviations has improved the reliability of production technology technology.In addition, deep hole pattern monitoring method provided by the invention does not increase any technology, thereby can be advantageously applied to existing dual damascene process in existing dual damascene process.
Description of drawings
Fig. 1 is that the pattern of deep hole is the generalized section of standard pattern;
Fig. 2 is that the pattern of deep hole is a kind of generalized section of deviation pattern;
Fig. 3 is that the pattern of deep hole is the generalized section of another kind of deviation pattern;
Fig. 4 is the pattern when deep hole when being standard pattern shown in Figure 1, forms the generalized section of BARC layer process in the dual damascene process;
Fig. 5 is the pattern when deep hole when being shown in Figure 2 a kind of deviation pattern, forms the generalized section of BARC layer process in the dual damascene process;
Fig. 6 is the pattern when deep hole when being shown in Figure 3 another kind of deviation pattern, forms the generalized section of BARC layer process in the dual damascene process;
Fig. 7 carries out the BARC layer to BARC layer shown in Figure 4 to anti-carve formed generalized section behind the etching technique;
Fig. 8 carries out the BARC layer to BARC layer shown in Figure 5 to anti-carve formed generalized section behind the etching technique;
Fig. 9 carries out the BARC layer to BARC layer shown in Figure 6 to anti-carve formed generalized section behind the etching technique.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment a kind of deep hole pattern monitoring method that is applied to dual damascene process provided by the invention is done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
When utilizing dual damascene process to form the interconnection of copper back segment, at first comprise: the etching material layer forms deep hole.Said material layer can be a sandwich construction, for example can comprise dielectric layer and be positioned at the hard mask layer on the said dielectric layer.The pattern of said deep hole is then as being introduced in the background technology; Might form the desirable standard pattern of technology; Be assumed to be the cylinder bodily form in the present embodiment; Also might form the deviation pattern that does not meet technological requirement, pattern wide at the top and narrow at the bottom often as shown in Figure 2 or up-narrow and down-wide pattern as shown in Figure 3.
In dual damascene process, after the etching material layer forms deep hole technology, form BARC (Bottom Anti-reflection Coating) layer, said BARC layer covers formed deep hole of last step and material layer.Specifically please refer to Fig. 4 to Fig. 6, wherein, Fig. 4 is the pattern when deep hole when being standard pattern shown in Figure 1, forms the generalized section of BARC layer process in the dual damascene process; Fig. 5 is the pattern when deep hole when being shown in Figure 2 a kind of deviation pattern, forms the generalized section of BARC layer process in the dual damascene process; Fig. 6 is the pattern when deep hole when being shown in Figure 3 another kind of deviation pattern, forms the generalized section of BARC layer process in the dual damascene process.
Inventor's discovery when the material of controlling formation BARC layer is a definite amount, is then passed through the material of this definite BARC layer of measuring; When facing the deep hole of different-shape; Especially, in the face of as during the pattern of Fig. 1 deep hole extremely shown in Figure 3, the thickness of the BARC layer of formation is with difference.Concrete; Please refer to Fig. 4; When the pattern of deep hole was standard pattern shown in Figure 1, formed BARC layer 20 comprised the first 21 of filling up deep hole and is positioned at the outer second portion 22 of deep hole, at this moment; Because deep hole is the standard pattern, the thickness of the second portion 22 that resulting deep hole is outer also will be standard thickness V1.
Please refer to Fig. 5, when the pattern of deep hole was shown in Figure 2 a kind of deviation pattern, formed BARC layer 20 ' comprised the first 21 ' of filling up deep hole and is positioned at the outer second portion 22 ' of deep hole that the thickness of the second portion 22 ' that resulting deep hole is outer is V2.At this moment; Because the pattern of deep hole is wide at the top and narrow at the bottom; Promptly with respect to the deep hole of standard pattern shown in Figure 1; The volume in the whole hole of the deep hole of deviation pattern shown in Figure 2 will be less than the volume of the deep hole of standard pattern shown in Figure 1; Promptly fill up the BARC material that BARC material that the first 21 ' of deep hole (deviation pattern shown in Figure 2) spends spends less than the first 21 of filling up deep hole (standard pattern shown in Figure 1), thereby the thickness ratio that will cause being positioned at the outer second portion 22 ' of deep hole (deviation pattern shown in Figure 2) is positioned at the thicker of the outer second portion 22 of deep hole (standard pattern shown in Figure 1), i.e. thickness V2 overgauge thickness V1.
Please refer to Fig. 6; When the pattern of deep hole is shown in Figure 3 another kind of deviation pattern; Formed BARC layer 20 " comprise the first 21 of filling up deep hole " and be positioned at the outer second portion 22 of deep hole ", the second portion 22 that resulting deep hole is outer " thickness be V3.At this moment; Because the pattern of deep hole is up-narrow and down-wide; Promptly with respect to the deep hole of standard pattern shown in Figure 1; The volume in the whole hole of the deep hole of deviation pattern shown in Figure 3 will be greater than the volume of the deep hole of standard pattern shown in Figure 1; Promptly fill up the first 21 of deep hole (deviation pattern shown in Figure 3) " the BARC material that spends greater than the first 21 of filling up deep hole (standard pattern shown in Figure 1) of the BARC material that spends, thereby will cause being positioned at the outer second portion 22 of deep hole (deviation pattern shown in Figure 3) " the thickness ratio be positioned at the thin thickness of the outer second portion 22 of deep hole (standard pattern shown in Figure 1), promptly thickness V3 is less than standard thickness V1.
In dual damascene process, after forming the BARC layer process, need anti-carve erosion, to remove the outer BARC layer of deep hole to said BARC layer.Specifically please refer to Fig. 7 to Fig. 9, wherein, Fig. 7 carries out the BARC layer to BARC layer shown in Figure 4 to anti-carve formed generalized section behind the etching technique; Fig. 8 carries out the BARC layer to BARC layer shown in Figure 5 to anti-carve formed generalized section behind the etching technique; Fig. 9 carries out the BARC layer to BARC layer shown in Figure 6 to anti-carve formed generalized section behind the etching technique.After through this step the BARC layer being anti-carved etching technique, with removing the outer second portion 22 of deep hole shown in Figure 4; The second portion 22 ' that deep hole perhaps shown in Figure 5 is outer; The second portion 22 that deep hole perhaps shown in Figure 6 is outer ".Content by preceding text are recorded and narrated can know, and is special when in the face of the different BARC layer of Fig. 4 to Fig. 6, when different thickness V1, V2 and V3, in this step, carries out the BARC layer and anti-carves the required time spent of erosion with difference.
Given this, the inventor proposes a kind of deep hole pattern monitoring method that is applied to dual damascene process, and wherein, said dual damascene process comprises: the etching material layer forms deep hole; Form the BARC layer, to cover said deep hole and material layer; Said BARC layer is anti-carved erosion, to remove the outer BARC layer of said deep hole; Said deep hole pattern monitoring method comprises: the diameter at monitoring deep hole top; And monitoring anti-carves the time spent of etching technique to said BARC layer.Promptly after the step that forms deep hole at the etching material layer, monitor the diameter at deep hole top, the time spent that also the BARC layer is anti-carved etching technique monitors.Content according to preceding text are recorded and narrated can know, anti-carves time spent of etching technique according to the BARC layer that monitors, and can further judge the pattern of deep hole, and the standard pattern that is according with process requirements does not still meet the deviation pattern of technological requirement.Thereby can in time find the pattern generation deviation of deep hole, improve the reliability of deep hole pattern monitoring.Certainly, in other embodiments of the invention, also can directly monitor the thickness that the BARC layer is positioned at the outer second portion of deep hole.
In the present embodiment; Concrete; If the time spent that said BARC layer is anti-carved etching technique is that the standard time spent, (the said standard time spent carried out the BARC layer to anti-carve the used time of etching technique for to standard thickness V1 the time, and this process time is known a, standard time; Promptly to the standard pattern of setting, through calculate or experiment etc. available is known, the standard time.), then said deep hole is the standard pattern; If the time spent that said BARC layer is anti-carved etching technique is greater than or less than the standard time spent, then said deep hole is the deviation pattern.Especially, if the time spent overgauge that said BARC layer is anti-carved etching technique is with constantly, shown in deep hole be deviation pattern as shown in Figure 2; If the time spent that said BARC layer is anti-carved etching technique less than standard with constantly, shown in deep hole be deviation pattern as shown in Figure 3.
Further, adopt the mode look for etching terminal, with control said BARC layer is anti-carved the etch period of erosion, and the monitoring that said BARC layer is anti-carved the time spent of etching technique comprises: monitor the said time spent of looking for etching terminal.If the quilting material of (like Fig. 4 to material layer 10 shown in Figure 6) said material layer (like Fig. 4 to hard mask layer 11 shown in Figure 6) be a silicon oxide compound, then adopt monitoring to the signal of the responsive wavelength of carbon oxygen signal strong and weak variation look for etching terminal.Said silicon oxide compound comprises: TEOS and/or FSG; Said wavelength to carbon oxygen signal sensitivity comprises: length is the wavelength of 4835 dusts.If the quilting material of (like Fig. 4 to material layer 10 shown in Figure 6) said material layer (like Fig. 4 to hard mask layer 11 shown in Figure 6) be a silicon-nitrogen compound, then adopt monitoring to the signal of the responsive wavelength of carbon nitrogen signal strong and weak variation look for etching terminal.Said silicon-nitrogen compound comprises: SiON and/or SiN; Said wavelength to carbon nitrogen signal sensitivity comprises: length is the wavelength of 3865 dusts.Concrete, confirming etching terminal, and etching begins to be the time spent of looking for etching terminal to the time spent that this wavelength signals power changes through the strong and weak variation of supervisory wavelength signal.
Owing to adopt the mode of looking for etching terminal said BARC layer to be anti-carved the etch period of erosion with control; According to the difference of thickness V1, V2 and V3, find time that etching terminal spends also with difference, in the present embodiment; Find the time that etching terminal spent of BRAC layer shown in Figure 5 will be the shortest; Be one than the standard time spent (the said standard time spent carries out the BARC layer to anti-carve the used time of etching technique for when the standard thickness V1, and this process time is known a, standard time; Promptly to the standard pattern of setting, through calculate or experiment etc. available is known, the standard time.) the short time; Then being the time that etching terminal spent of finding BARC layer shown in Figure 4, is time of equating with the standard time spent; Being the time that etching terminal spent of BARC layer shown in Figure 6 at last, is one than the time of standard with duration.
In the present embodiment, the depth-to-width ratio of said deep hole is greater than 3, and the material of said BARC layer is that carbon atom is the organic antireflecting film of main body.
In a kind of deep hole pattern monitoring method that is applied to dual damascene process provided by the invention, through the diameter at monitoring deep hole top; And the time spent that monitoring anti-carves etching technique to said BARC layer carry out the monitoring of deep hole pattern, thereby with the pattern generation deviation of timely discovery deep hole, improve the reliability of deep hole pattern monitoring.When finding the pattern generation deviation of deep hole, just can proofread and correct, thereby the expansion of guarding against deviations has improved the reliability of production technology technology.In addition, deep hole pattern monitoring method provided by the invention does not increase any technology, thereby can be advantageously applied to existing dual damascene process in existing dual damascene process.
Foregoing description only is the description to preferred embodiment of the present invention, is not any qualification to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection range of claims.
Claims (15)
1. deep hole pattern monitoring method that is applied to dual damascene process, wherein, said dual damascene process comprises:
The etching material layer forms deep hole;
Form the BARC layer, to cover said deep hole and material layer;
Said BARC layer is anti-carved erosion, to remove the outer BARC layer of said deep hole;
It is characterized in that said deep hole pattern monitoring method comprises:
The diameter at monitoring deep hole top; And
Monitoring anti-carves the time spent of etching technique to said BARC layer.
2. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 1 is characterized in that, after the etching material layer forms the step of deep hole, carries out the step of the diameter at monitoring deep hole top.
3. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 1 is characterized in that, if the time spent that said BARC layer is anti-carved etching technique is the standard time spent, then said deep hole is the standard pattern.
4. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 1 is characterized in that, if the time spent that said BARC layer is anti-carved etching technique is greater than or less than the standard time spent, then said deep hole is the deviation pattern.
5. like each the described deep hole pattern monitoring method that is applied to dual damascene process in the claim 1 to 3, it is characterized in that, adopt the mode of looking for etching terminal, said BARC layer is anti-carved the etch period of erosion with control.
6. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 5 is characterized in that, the time spent that monitoring anti-carves etching technique to said BARC layer comprises:
Monitor the said time spent of looking for etching terminal.
7. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 6 is characterized in that, said material layer comprises that the quilting material near the BARC layer reaches the primer away from the BARC layer.
8. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 7 is characterized in that, if said quilting material is a silicon oxide compound, then adopts monitoring that strong and weak variation of the signal of the responsive wavelength of carbon oxygen signal looked for etching terminal.
9. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 8 is characterized in that said silicon oxide compound comprises: TEOS and/or FSG.
10. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 8 is characterized in that, said wavelength to carbon oxygen signal sensitivity comprises: length is the wavelength of 4835 dusts.
11. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 7 is characterized in that, if said quilting material is a silicon-nitrogen compound, then adopts monitoring that strong and weak variation of the signal of the responsive wavelength of carbon nitrogen signal looked for etching terminal.
12. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 11 is characterized in that said silicon-nitrogen compound comprises: SiON and/or SiN.
13. the deep hole pattern monitoring method that is applied to dual damascene process as claimed in claim 11 is characterized in that, said wavelength to carbon nitrogen signal sensitivity comprises: length is the wavelength of 3865 dusts.
14. each the described deep hole pattern monitoring method that is applied to dual damascene process as in the claim 1 to 3 is characterized in that the depth-to-width ratio of said deep hole is greater than 3.
15. each the described deep hole pattern monitoring method that is applied to dual damascene process as in the claim 1 to 3 is characterized in that the material of said BARC layer is that carbon atom is the organic antireflecting film of main body.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104944366A (en) * | 2014-03-26 | 2015-09-30 | 中国科学院微电子研究所 | Monitoring method of silicon deep hole process |
| CN107316821A (en) * | 2016-04-27 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of depth Detection of Stability method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016136A (en) * | 2000-06-30 | 2002-01-18 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
| US6455416B1 (en) * | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
| KR20060076067A (en) * | 2004-12-29 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Detection method for not open state of contact hole and device for the same |
| CN101233609A (en) * | 2005-05-02 | 2008-07-30 | 株式会社拓普康 | Method for manufacturing semiconductor device |
| CN101546720A (en) * | 2009-04-09 | 2009-09-30 | 上海集成电路研发中心有限公司 | Method for detecting residue of photoresist in orifice and corresponding method for measuring strip width of orifice |
| CN101958275A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Contact hole forming method |
-
2011
- 2011-10-20 CN CN201110321377.3A patent/CN102361015B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016136A (en) * | 2000-06-30 | 2002-01-18 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
| US6455416B1 (en) * | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
| KR20060076067A (en) * | 2004-12-29 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Detection method for not open state of contact hole and device for the same |
| CN101233609A (en) * | 2005-05-02 | 2008-07-30 | 株式会社拓普康 | Method for manufacturing semiconductor device |
| CN101546720A (en) * | 2009-04-09 | 2009-09-30 | 上海集成电路研发中心有限公司 | Method for detecting residue of photoresist in orifice and corresponding method for measuring strip width of orifice |
| CN101958275A (en) * | 2009-07-16 | 2011-01-26 | 中芯国际集成电路制造(上海)有限公司 | Contact hole forming method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104944366A (en) * | 2014-03-26 | 2015-09-30 | 中国科学院微电子研究所 | Monitoring method of silicon deep hole process |
| CN107316821A (en) * | 2016-04-27 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of depth Detection of Stability method |
| CN107316821B (en) * | 2016-04-27 | 2021-03-12 | 中芯国际集成电路制造(上海)有限公司 | Depth stability detection method |
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| CN102361015B (en) | 2016-01-06 |
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