CN102345165A - Device for reducing warping degree of polycrystalline silicon slice - Google Patents
Device for reducing warping degree of polycrystalline silicon slice Download PDFInfo
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- CN102345165A CN102345165A CN2011102318087A CN201110231808A CN102345165A CN 102345165 A CN102345165 A CN 102345165A CN 2011102318087 A CN2011102318087 A CN 2011102318087A CN 201110231808 A CN201110231808 A CN 201110231808A CN 102345165 A CN102345165 A CN 102345165A
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- boiler tube
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Abstract
The invention discloses a device for reducing the warping degree of a polycrystalline silicon slice, which comprises a reaction furnace tube and is characterized in that the bottom of the reaction furnace tube is provided with a dispersion tube, both ends of the dispersion tube are provided with inlets, a plurality of through holes are arranged in the tube wall of the dispersion tube, and the dispersion tube is communicated with the reaction furnace tube through the through holes. Through selecting the proper device, the minimum warp increase quantity can reach 5.35 after a polycrystalline thin film grows on the silicon slice surface, and in addition, the uniformity of the silicon slice can also reach the use requirement.
Description
Technical field
The present invention relates to a kind of device that reduces the polysilicon chip angularity.
Background technology
Be illustrated in figure 1 as polysilicon membrane growing apparatus in the prior art, it comprises reaction boiler tube 1, and reaction boiler tube 1 is respectively arranged with electric heater 12 up and down.Reaction boiler tube 1 inner bottom part is provided with inlet pipe 2.Inlet pipe 2 one ends are provided with import 21.Inlet pipe 2 tube walls are provided with equally distributed through hole (not shown).Part reactant gases passes through hole and gets in the reaction boiler tube 1 from import 21 after inlet pipe 2 transverse flow.End away from the import 21 of inlet pipe 2 in the reaction boiler tube 1 is provided with fire door inlet pipe 3.The upper end of fire door inlet pipe 3 is provided with import 31.The tube wall of fire door inlet pipe 3 is provided with the through hole (not shown).Another part reactant gases gets into from import 31 and passes in the through hole entering reaction boiler tube 1 after fire door inlet pipe 3 vertically flows.Reaction boiler tube 1 is provided with extraction pipe 11 near an end of the import 21 of inlet pipe 2.The gas that the vacuum extractor (not shown) is extracted out in the reaction boiler tube 1 through extraction pipe 11 is to increase the flowability of the reactant gases in the reaction boiler tube 1.One of this growth polycrystalline device shortcoming is the reactant gases skewness, and the polycrystal film that causes growing is in uneven thickness, and is prone to cause the silicon warp degree behind the growth polycrystalline to exceed the standard of service requirements.The preceding silicon chip WARP mean value of polycrystal film of not growing is generally about 10.In some Application Areas, need WARP≤37.Utilize apparatus and method of the prior art, through after the polycrystalline technology, the WARP increasing amount is average 27.47, can't reach service requirements, and the excessive fraction defective that causes of amplification rises.Behind silicon chip surface growth polycrystalline, angularity all can increase.Can't satisfy service requirements when increasing degree is excessive.
Each parameter value of polycrystalline growth technology also can exert an influence to the angularity increasing degree, and seeking a kind of working method and device that reduces the polysilicon chip angularity is important techniques problem in this area to solve angularity excessive.
Summary of the invention
The objective of the invention is to spend greatly, can reduce the device of polysilicon chip angularity in order to overcome deficiency of the prior art, provide the silicon warp that prevents to grow behind the polycrystalline.
For realizing above purpose, the present invention realizes through following technical scheme:
Reduce the device of polysilicon chip angularity, comprise reaction boiler tube, it is characterized in that, said reaction boiler tube bottom is provided with the disperse pipe, and disperse pipe two ends are provided with import; The disperse tube wall is provided with a plurality of through holes; The disperse pipe is communicated with reaction boiler tube through through hole.
Preferably, the via densities that is positioned at 0.3 times of pipe range scope in the middle of the disperse pipe of reaction boiler tube is 5-15 times of the via densities of other parts.
Described 0.3 times of pipe range is meant that the disperse pipe mid point that is positioned at reaction boiler tube certainly extends 0.15 times length respectively to two ends.
Preferably, the through hole that is positioned on the disperse pipe of reaction boiler tube is the centrosymmetry setting with the disperse pipe mid point that is positioned at reaction boiler tube.
Near more from import, then pressure is big more, and pressure is big more, and then flow velocity is fast more.And disperse pipe middle part is from source of the gas place farthest, and therefore at local sparse the be provided with through hole of disperse pipe near import, and the intensive through hole that is provided with in middle part can help the pressure in the reaction tubes even.
The present invention is through selecting suitable device, and behind silicon chip surface growth polycrystal film, the I of WARP increasing amount reaches 5.35.And the homogeneity of silicon chip also can reach service requirements.
Description of drawings
The apparatus structure synoptic diagram at silicon chip surface preparing polysilicon film of Fig. 1 for using in the prior art.
The apparatus structure synoptic diagram at silicon chip surface preparing polysilicon film of Fig. 2 for using among the present invention.
Fig. 3 is the disperse tubular construction synoptic diagram that is positioned at reaction boiler tube among the present invention.
Warp value and the corresponding graphic representation of homogeneity that Fig. 4 produces silicon chip for the device that uses among the present invention with temperature.
Embodiment
Below in conjunction with accompanying drawing the present invention is carried out detailed description:
As shown in Figure 2, can reduce the device of polysilicon chip angularity, it comprises reaction boiler tube 1, and reaction boiler tube is provided with well heater 12 up and down, is used to reaction boiler tube 1 heating.Reaction boiler tube 1 inner bottom part is provided with disperse pipe 4.Disperse pipe 4 two ends are respectively arranged with first import 41 and second import 42.As shown in Figure 3, to be positioned at the length L of reaction boiler tube be 2300mm to the disperse pipe.Disperse pipe 4 tube walls are provided with through hole 43.To 0.35L, promptly be respectively arranged with a through hole from two ends that disperse pipe 4 is positioned at reaction boiler tube 1 in the 805mm scope, residue 0.3L is provided with 12 through holes in the 690mm scope.
During use, reactant gases gets in the disperse pipe 4 from first import 41 and second import 42 respectively, in disperse pipe 4, passes through hole 43 after the transverse flow and gets in the reaction boiler tube 1.Reaction boiler tube 1 is provided with extraction pipe 11.The gas that the vacuum extractor (not shown) is extracted out in the reaction boiler tube 1 through extraction pipe 11 is to increase the flowability of the reactant gases in the reaction boiler tube 1.
Use said apparatus device of the prior art respectively, the angularity numerical value of the polysilicon chip of under identical processing parameter condition, producing is as shown in the table:
Use the device among the present invention; Furnace pressure 220mtorr; Gas flow 75ml/min from first import, 41 entering; From the gas flow 75ml/min that second import 42 gets into, the WARP value of the polysilicon chip of under the situation of differing temps, producing and the corresponding relation curve of homogeneity and temperature are as shown in Figure 4.As can be seen from Figure 4, in 630 ℃～680 ℃, the polysilicon chip WARP increased value of production is 26.39 to the maximum, and homogeneity is 10.2 to the maximum, and the performance of this two aspect all can satisfy service requirements.
The comparative example 1
Use device shown in Figure 1,680 ℃ of the temperature in the reaction boiler tube, furnace pressure 180mtorr is from the gas flow 200ml/min of inlet pipe 2 entering, from the gas flow 50ml/min of fire door inlet pipe 3 entering.
Use device shown in Figure 2,670 ℃ of the temperature in the reaction boiler tube, furnace pressure 220mtorr is from the gas flow 75ml/min of inlet pipe 4 first imports 41 entering, from the gas flow 75ml/min of second import, 42 entering.
Comparative example 1 contrasts with the silicon chip performance test data that embodiment 10 produces
Through hole on the disperse pipe 4 among the present invention, middle 0.3L scope inner via hole number can also be 5 times, 10 times, 11 times and 14 times of two ends 0.35L scope inner via hole numbers.
Embodiment among the present invention only is used for that the present invention will be described, does not constitute the restriction to the claim scope, and other substituting of being equal in fact that those skilled in that art can expect are all in protection domain of the present invention.
Claims (3)
1. reduce the device of polysilicon chip angularity, comprise reaction boiler tube, it is characterized in that, said reaction boiler tube bottom is provided with the disperse pipe, and disperse pipe two ends are provided with import; The disperse tube wall is provided with a plurality of through holes; The disperse pipe is communicated with reaction boiler tube through through hole.
2. the device of reduction polysilicon chip angularity according to claim 1 is characterized in that, the via densities that is positioned at 0.3 times of pipe range scope in the middle of the disperse pipe of reaction boiler tube is 5-15 times of the via densities of other parts.
3. the device of reduction polysilicon chip angularity according to claim 2 is characterized in that, the through hole that is positioned on the disperse pipe of reaction boiler tube is the centrosymmetry setting with the disperse pipe mid point that is positioned at reaction boiler tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110231808.7A CN102345165B (en) | 2011-08-14 | 2011-08-14 | Device for reducing warping degree of polycrystalline silicon slice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110231808.7A CN102345165B (en) | 2011-08-14 | 2011-08-14 | Device for reducing warping degree of polycrystalline silicon slice |
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| Publication Number | Publication Date |
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| CN102345165A true CN102345165A (en) | 2012-02-08 |
| CN102345165B CN102345165B (en) | 2014-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110231808.7A Active CN102345165B (en) | 2011-08-14 | 2011-08-14 | Device for reducing warping degree of polycrystalline silicon slice |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
| CN201232028Y (en) * | 2008-04-20 | 2009-05-06 | 徐州东南多晶硅材料研发有限公司 | Polycrystalline silicon reducing furnace with adjustable air inlet pipe nozzle |
| CN101572228A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Methods for forming polysilicon thin film and gate |
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2011
- 2011-08-14 CN CN201110231808.7A patent/CN102345165B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
| CN201232028Y (en) * | 2008-04-20 | 2009-05-06 | 徐州东南多晶硅材料研发有限公司 | Polycrystalline silicon reducing furnace with adjustable air inlet pipe nozzle |
| CN101572228A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Methods for forming polysilicon thin film and gate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
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| CN102345165B (en) | 2014-03-19 |
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Address after: 201617 no.558, changta Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai crystal silicon material Co., Ltd Address before: 201617 No. 500 South noble Road, Shanghai, Songjiang District Patentee before: Shanghai Hejing Silicon Material Co., Ltd. |