CN102324447A - Method and device for preparing polycrystalline silicon solar cell texture - Google Patents
Method and device for preparing polycrystalline silicon solar cell texture Download PDFInfo
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- CN102324447A CN102324447A CN201110277861A CN201110277861A CN102324447A CN 102324447 A CN102324447 A CN 102324447A CN 201110277861 A CN201110277861 A CN 201110277861A CN 201110277861 A CN201110277861 A CN 201110277861A CN 102324447 A CN102324447 A CN 102324447A
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Abstract
The invention relates to a method and device for preparing a polycrystalline silicon solar cell texture. The method comprises the following steps of: compositely machining a polycrystalline silicon wafer by using laser and electrochemistry; forming an array light trapping structure on the machined surface of the polycrystalline silicon wafer; meanwhile, generating electrochemical corrosion to the surface of the polycrystalline silicon wafer by using electrolyte; and carrying out smooth finishing on the machined surface. The device for realizing the method comprises a laser 5 and an electrolysis mechanism 15 as well as a power supply 1 and a workbench 11, wherein the electrolysis mechanism 15 mainly comprises an electrolytic cell base 13, an electrolytic cell cover plate 4, a cathode 8, an anode 12, a workpiece mounting fixture 14, a sealing ring 10 and an optical protective mirror; the polycrystalline silicon wafer is placed in the electrolytic cell and the electrolytic cell is divided into two chambers so that the electrolytic cell is an unique current channel during electrolysis. The invention provides a novel highly efficient texture machining method of the polycrystalline silicon solar cell; and the product has the advantages of high repeatability, good height to width aspect ratio performance and important effect on increasing the photoelectric conversion efficiency; and the reflection reducing effect which is superior to the reflection reducing effect of the texture prepared through pure chemical corrosion can be obtained.
Description
Technical field
The present invention relates to a kind of manufacture method of polycrystalline silicon solar battery suede, relate in particular to a kind of laser and compound etching method of electrochemistry of utilizing, relate to the special-purpose processing unit (plant) of this method simultaneously.
Background technology
Solar energy is human topmost regenerative resource, and the solar cell that utilizes photovoltaic effect (Photovoltaic Effect) to process is a kind of device that can sunlight directly be changed into electric energy.That photovoltaic generation has is safe and reliable, noiseless, zero disposal of pollutants, restriction less, advantages such as low, the easy maintenance of failure rate.Silica-base material is raw material of making solar cell; Difference according to material therefor; Solar cell can be divided into single crystal silicon solar cell, polycrystalline silicon solar cell, polysilicon thin-film solar battery etc., wherein, polycrystalline silicon solar cell at the application proportion of global photovoltaic product about 45%.The cost of polycrystalline silicon solar cell is relatively low, but efficient is high less than single crystal silicon solar cell generally, the gap that dwindle both, and reducing polysilicon surface is valid approach to reflection of light.The matte technology is the main method that preparation has the silicon face that reduces the light reflection function, forms matte through surperficial texture at silicon chip surface, can produce repeatedly reflection to light wave on the surface, and the light of different wave length is all had antireflective effect preferably.
For the polycrystalline silicon solar cell that accounts for main flow at present, not surface treated reflectivity generally surpasses 30%.Traditional polycrystalline silicon suede technology is to utilize acidic chemical solution that polysilicon surface is carried out isotropic etch to realize the matte preparation; The polycrystalline silicon suede light trapping structure of processing is generally pateriform; And skewness; Aspect ratio is inconsistent, and is limited to the antireflective effect of light wave, can only reflectivity be reduced to about 20%.
Along with the development of laser processing technology, laser is used widely in micro processing field.Laser Micro-Machining can process light trapping micro-structural regularly arranged, good reproducibility at polysilicon surface, thereby realizes matte effect preferably.But the recast layer that laser ablation can cause the deposition again of thermal stress, mechanical damage and the processing district material splash of polycrystalline silicon solar cell base material to form has influenced crudy and result of use.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned prior art, a kind of producing device that has the production method for polycrystalline silicon solar cell texture surface of high duplication, good depth-width ratio and realize this method is provided.
Above-mentioned goal of the invention is realized by following technical scheme:
The inventive method is: polysilicon chip is placed electrolysis tank; And the unique current channel when making polysilicon chip be electrolysis; With focussed laser beam the polysilicon chip surface is scanned, electrolysis tank begins electrolysis simultaneously, and the scanning of laser beam makes the polysilicon chip surface form array light trapping structure; Electrolyte produces electrochemical corrosion, polishing finished surface to the polysilicon chip surface.
The further design of foregoing invention method is that said laser beam is pulse or the continuous laser of wavelength at 193 ~ 1064nm, and pulse energy is that 50 ~ 200mJ or continuous laser average power are 5 ~ 100W.
The further design of foregoing invention method is that said electrolyte is alkaline solution, and its pH value is 9～10, and concentration is 20% ~ 30%.
Apparatus of the present invention comprise laser 5, electrolysis mechanism 15 and workbench 11; It is characterized in that; Said electrolysis mechanism 15 mainly is made up of electrolysis tank base 13, electrolysis tank cover plate 4, negative electrode 8, anode 12, negative electrode joint chair 3, anode joint chair 2, workpiece sectional fixture 14, sealing ring 10 and optical protection mirror 7, and electrolysis tank base 13 is connected on the workbench 11; The open upper end of electrolysis tank cover plate 4 capping electrolysis tank bases 13, negative electrode joint chair 3 is separately fixed on the electrolysis tank cover plate 4 with anode joint chair 2, and negative electrode 8, anode 12 are connected with negative electrode joint chair 3, anode joint chair 2 respectively; Be used for the workpiece sectional fixture 14 of joining work pieces upper and lower side and the electrolysis tank base 13 that sealing ring 10 is connected to electrolysis tank cover plate 4 inboards and correspondence position; Make workpiece that electrolysis tank is separated two Room that the grooving electrolyte inside can not circulate mutually; Said negative electrode 8 respectively places a Room with anode 12, and the back side of workpiece and to be processed are arranged at anode (12) and chamber, negative electrode 8 place respectively; Optical protection mirror 7 is fixed on electrolysis tank base 13 1 sides, and laser 5 places the position of crystal silicon sheet electrolysis tank base 13 outsides corresponding to optical protection mirror 7, and condenser lens 6 places on the position between optical protection mirror 7 and the laser 5.
The further design of foregoing invention device is that said electrolysis tank cover plate 4 is connected the open upper end of said electrolysis tank base 13 hermetically, thereby forms the electrolysis tank of sealing.
The further design of foregoing invention device is, on the position of electrolysis tank cover plate 4 corresponding to said two Room, respectively is provided with a through hole that is used to inject electrolyte feed liquor and gas discharge.
The further design of foregoing invention device is that said negative electrode, anode are processed with platinized platinum.
The further design of foregoing invention device is, said negative electrode 8, anode 12 are connected to form the external power supply circuit through lead with the corresponding utmost point of power supply respectively, are connected with voltmeter and ammeter in this circuit.
The inventive method is that compound use is processed in laser processing and electrochemistry; The effect of main removal material is played in laser processing, pulse laser beam or continuous laser beam is focused on the finished surface that is installed in the polysilicon chip in the electrolysis tank line scanning of going forward side by side; Process the array light trapping structure that has high duplication, is fit to depth-width ratio; The effect of assist removal material is played in the chemical process of electricity consumption simultaneously, the sputter thing of online removal finished surface, thus realize high-quality and efficient polysilicon chip matte processing.
Apparatus of the present invention, through moving of workbench, can be with the optical protection mirror of laser beam through electrolysis tank one side, focussing force is realized laser scanning manufacturing in workpiece machining surface; Workpiece is fixed between electrolysis tank cover plate and the electrolysis tank base in the electrolysis mechanism; Electrolysis tank is divided into two; Workpiece becomes current path unique in the electrolysis tank, and the back side one side of workpiece is to connect the anode of the platinized platinum of positive source as electrochemistry processing, and to be processed one side of workpiece is to connect the negative electrode of the platinized platinum of power cathode as electrochemistry processing; Connect in negative and positive under the condition of energized, realize that electrolyte is to be processed electrochemical corrosion of workpiece.Laser action and electrochemical action are carried out compound, in polysilicon chip Surface Machining array light trapping structure, obtain good matte effect.Thus, the present invention produces following beneficial effect:
1) method of the present invention be laser action and electrochemical action are carried out compound, the preparation polycrystalline silicon solar battery suede.
It is main that Compound Machining mechanism is removed material with the photo-thermal effect of laser, and electrochemical corrosion act as the auxilliary polishing finished surface that is mainly used in;
Different with laser processing in the air, laser will produce bigger mechanics effect through electrolyte restraint layer processing work, help improving material removing rate; The temperature gradient that laser focusing forms makes the electrochemical corrosion effect of processing district more concentrated effectively; Laser is effectively removed the passivating film that electrochemical reaction generates to the thermodynamic activity of surface of the work, improves the efficient of electrochemical corrosion.
2) device of the present invention guaranteed laser action and electrochemical action can composite action in the polycrystalline silicon solar cell surface, both improved the matte preparation efficiency, improve the matte effect again.
3) apparatus structure of the present invention is simple, is easy to install, overhaul.
Description of drawings
Accompanying drawing is the structural representation of the compound preparation polycrystalline silicon solar battery suede of laser electrochemistry of the present invention device.
Label title among the figure: 1, power supply, 2, the anode joint chair, 3, the negative electrode joint chair, 4, the electrolysis tank cover plate, 4a, through hole; 5, laser, 6, condenser lens, 7, the optical protection mirror, 8, negative electrode; 9, polysilicon chip (workpiece), 10, sealing ring, 11, workbench, 12, anode; 13, electrolysis tank base, 14, the workpiece sectional fixture, 15, electrolysis mechanism, 16 ammeters, 17, voltmeter.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further explain.
Embodiment about the compound preparation polycrystalline silicon solar battery suede of laser electrochemistry device
Embodiment about the compound preparation polycrystalline silicon solar battery suede of laser electrochemistry method
Following embodiment is the matte preparation of carrying out polysilicon chip with the said device of the foregoing description.
The preparation of following step is carried out in the matte preparation of the polysilicon chip of present embodiment:
1) device assembling: adopting a wavelength is the 193nm excimer laser, and the laser beam that sends is a pulse laser, and the light beam transverse mode is a low step mode, and the decomposition voltage that power supply provides is 5 ~ 8V; And be the corresponding position that 300 microns polysilicon chip is connected to electrolysis tank base 13 with thickness.
2) inject electrolyte: two feed liquor air vent holes through electrolysis tank cover plate 4 slowly inject KOH electrolyte respectively to said two Room; The pH value of this electrolyte is 9; Concentration is 20%, and liquid level is lower than the lower end of workpiece sectional fixture 14, anode joint chair 2, negative electrode joint chair 3 a little more than workpiece district to be processed;
3) light path detects: confirm that light path is smooth and easy, condenser lens 6, optical protection mirror 7 positions be normal;
4) laser focusing: the position of adjustment workbench 11 makes the laser focusing point focusing on the polysilicon chip work surface;
5) laser parameter is set: it is 2 ~ 4KHz that laser pulse frequency is set, and single pulse energy is 50 ~ 200mJ;
Preparation finishes the back and starts adjustment laser 5, and whole laser 5 sends work laser, and power-on 1 is carried out the compound preparation matte processing of laser electrochemistry to workpiece simultaneously.The speed of the translational speed control laser scanning through regulating workbench, moving speed of table is set at 200 ~ 600mm/s; Obtain the size of Faradaic current through the reading of ammeter 16; Through regulating the Faradaic current of the electric power output voltage control course of processing.
After the preparation process was accomplished, the face pattern of polysilicon chip machined surface was an array solid matter bowl configurations.
The preparation of following step is carried out in the matte preparation of the polysilicon chip of present embodiment:
1) device assembling: adopting a wavelength is the 532nm semiconductor laser, and the laser beam that sends is a continuous laser, and the light beam transverse mode is a low step mode, and the decomposition voltage that power supply provides is 2 ~ 5V; And be the corresponding position that 250 microns polysilicon chip is connected to electrolysis tank base 13 with thickness.
2) inject electrolyte: two feed liquor air vent holes through electrolysis tank cover plate 4 slowly inject KOH electrolyte respectively to said two Room; The pH value of this electrolyte is 9.5; Concentration is 25%, and liquid level is lower than the lower end of workpiece sectional fixture 14, anode joint chair 2, negative electrode joint chair 3 a little more than workpiece district to be processed;
3) light path detects: confirm that light path is smooth and easy, condenser lens 6, optical protection mirror 7 positions be normal;
4) laser focusing: the position of adjustment workbench 11 makes the laser focusing point focusing on the polysilicon chip work surface;
5) laser parameter is set: it is 5-100W that average laser power is set;
Preparation finishes the back and starts adjustment laser 5, and whole laser 5 sends work laser, and power-on 1 is carried out the compound preparation matte processing of laser electrochemistry to workpiece simultaneously.The speed of the translational speed control laser scanning through regulating workbench, moving speed of table is set at 20 ~ 60mm/s; Obtain the size of Faradaic current through the reading of ammeter 16; Through regulating the Faradaic current of the electric power output voltage control course of processing.
After the preparation process was accomplished, the face pattern of polysilicon chip machined surface was an array solid matter groove structure.
The preparation of following step is carried out in the matte preparation of the polysilicon chip of present embodiment:
1) device assembling: adopt the Nd:YAG laser of a wavelength 1064nm, the light beam transverse mode is a low step mode, and the decomposition voltage that power supply provides is 5 ~ 8V; And be the corresponding position that 300 microns polysilicon chip is connected to electrolysis tank base 13 with thickness.
2) inject electrolyte: two feed liquor air vent holes through electrolysis tank cover plate 4 slowly inject NaOH electrolyte respectively to said two Room; The pH value of this electrolyte is 10; Concentration is 30%, and liquid level is lower than the lower end of workpiece sectional fixture 14, anode joint chair 2, negative electrode joint chair 3 a little more than workpiece district to be processed;
3) light path detects: confirm that light path is smooth and easy, condenser lens 6, optical protection mirror 7 positions be normal;
4) laser focusing: the position of adjustment workbench 11 makes the laser focusing point focusing on the polysilicon chip work surface;
5) laser parameter is set: it is 1 ~ 3KHz that laser pulse frequency is set, and single pulse energy is 50 ~ 200mJ;
6) start adjustment laser 5 and send work laser, power-on 1 is carried out the compound preparation matte processing of laser electrochemistry to workpiece simultaneously.The speed of the translational speed control laser scanning through regulating workbench, moving speed of table is set at 200 ~ 600mm/s; Obtain the size of Faradaic current through the reading of ammeter 16; Through regulating the Faradaic current of the electric power output voltage control course of processing.
After the preparation process was accomplished, the face pattern of polysilicon chip machined surface was an array solid matter bowl configurations.
?
In above-mentioned two embodiment that realize the inventive method; The laser 5 of apparatus of the present invention focuses on the machined surface of polysilicon chip 9 through condenser lens 6 and through optical protection mirror 7; Workbench 11 carries out spatial movement, so that laser beam focuses on the machined surface of polysilicon chip and scans regularly.While cathode and anode energized, electric current flow to the power-electrode by electrolyte, negative electrode 8 and the lead that electrolyte, polysilicon chip 9, the negative electrode of power supply positive electrode through lead, anode 12, chamber, anode place belongs to the chamber.The scanning of laser beam makes the polysilicon chip surface form array light trapping structure, and electrolyte produces electrochemical corrosion to the polysilicon chip surface, the polishing finished surface, and laser and electrolysis obtain good matte effect simultaneously to the effect of polysilicon chip machined surface.
Claims (10)
1. a method for preparing polycrystalline silicon solar battery suede is characterized in that, polysilicon chip is placed electrolysis tank; And the unique current channel when making polysilicon chip be electrolysis; With focussed laser beam the polysilicon chip surface is scanned, carried out electrolysis simultaneously, the scanning of laser beam makes the polysilicon chip surface form array light trapping structure; Electrolyte produces electrochemical corrosion, polishing finished surface to the polysilicon chip surface.
2. a kind of method for preparing polycrystalline silicon solar battery suede according to claim 1 is characterized in that, said laser beam is pulse or the continuous laser of wavelength at 193 ~ 1064nm, and pulse energy is that 50 ~ 200mJ or continuous laser average power are 5 ~ 100W.
3. a kind of method for preparing polycrystalline silicon solar battery suede according to claim 1 is characterized in that said electrolyte is alkaline solution, and its pH value is 9～10, and concentration is 20% ~ 30%.
4. a kind of a kind of device for preparing polycrystalline silicon solar battery suede of device for preparing polycrystalline silicon solar battery suede of device for preparing polycrystalline silicon solar battery suede; Comprise laser (5), electrolysis mechanism (15) and workbench (11); It is characterized in that; Said electrolysis mechanism (15) mainly is made up of electrolysis tank base (13), electrolysis tank cover plate (4), negative electrode (8), anode (12), negative electrode joint chair (3), anode joint chair (2), workpiece sectional fixture (14), sealing ring (10) and optical protection mirror (7), and electrolysis tank base (13) is connected on the workbench (11); The open upper end of electrolysis tank cover plate (4) capping electrolysis tank base (13); Negative electrode joint chair (3) and anode joint chair (2) are separately fixed on the electrolysis tank cover plate (4), and negative electrode (8), anode (12) are connected with negative electrode joint chair (3), anode joint chair (2) respectively; Be used for the workpiece sectional fixture (14) of joining work pieces upper and lower side and the electrolysis tank base (13) that sealing ring (10) is connected to electrolysis tank cover plate (4) inboard and correspondence position; Make workpiece that electrolysis tank is separated two Room that the grooving electrolyte inside can not circulate mutually; Said negative electrode (8) and anode (12) respectively place a Room, and the back side of workpiece and to be processed are arranged at anode (12) and chamber, negative electrode (8) place respectively; Optical protection mirror (7) is fixed on electrolysis tank base (13) one sides; Laser (5) places the position of electrolysis tank base (13) outside corresponding to optical protection mirror (7), and condenser lens (6) places on the position between optical protection mirror (7) and the laser (5).
5. a kind of device for preparing polycrystalline silicon solar battery suede according to claim 4 is characterized in that said workpiece is a polysilicon chip.
6. a kind of device for preparing polycrystalline silicon solar battery suede according to claim 4 is characterized in that said workbench (11) can be done spatial movement.
7. a kind of device for preparing polycrystalline silicon solar battery suede according to claim 4 is characterized in that said electrolysis tank cover plate (4) is connected the open upper end of said electrolysis tank base (13) hermetically, thereby forms the electrolysis tank of sealing.
8. according to claim 4 or 7 described a kind of devices that prepare polycrystalline silicon solar battery suede, it is characterized in that, on the position of electrolysis tank cover plate (4) corresponding to said two Room, respectively be provided with one and be used to inject electrolyte and the through hole of discharging gas.
9. a kind of device for preparing polycrystalline silicon solar battery suede according to claim 4 is characterized in that, said negative electrode (8), anode (12) are processed with platinized platinum.
10. according to claim 4 or 9 described a kind of devices that prepare polycrystalline silicon solar battery suede; It is characterized in that; Said negative electrode (8), anode (12) connect with the corresponding utmost point of power supply through lead respectively, form the external power supply circuit, are connected with voltmeter and ammeter in this circuit.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709163A (en) * | 2012-05-24 | 2012-10-03 | 中山大学 | Wool preparing process by crystalline silicon based on laser interference induced reaction |
| CN103395740A (en) * | 2013-08-02 | 2013-11-20 | 合肥工业大学 | Method for selectively preparing porous silicon based on silicon on insulator |
| CN104952947A (en) * | 2015-05-14 | 2015-09-30 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
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| CN1547079A (en) * | 2003-12-12 | 2004-11-17 | 华中科技大学 | Quasi-molecule laser electrochemical microstructure manufacturing method and equipment |
| CN1919514A (en) * | 2006-09-18 | 2007-02-28 | 南京航空航天大学 | Spraying liquid bunch electrolysis-laser composite processing method and apparatus thereof |
| CN101404307A (en) * | 2008-10-29 | 2009-04-08 | 中山大学 | Production method for polycrystalline silicon solar cell texture surface |
| CN101817108A (en) * | 2010-03-24 | 2010-09-01 | 江苏大学 | Method and device for realizing photoelectrochemical micro-etch processing of masked electrode |
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- 2011-09-19 CN CN2011102778610A patent/CN102324447B/en not_active Expired - Fee Related
Patent Citations (5)
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| JPS61260641A (en) * | 1985-05-15 | 1986-11-18 | Hitachi Ltd | Formation of diffraction lattice |
| CN1547079A (en) * | 2003-12-12 | 2004-11-17 | 华中科技大学 | Quasi-molecule laser electrochemical microstructure manufacturing method and equipment |
| CN1919514A (en) * | 2006-09-18 | 2007-02-28 | 南京航空航天大学 | Spraying liquid bunch electrolysis-laser composite processing method and apparatus thereof |
| CN101404307A (en) * | 2008-10-29 | 2009-04-08 | 中山大学 | Production method for polycrystalline silicon solar cell texture surface |
| CN101817108A (en) * | 2010-03-24 | 2010-09-01 | 江苏大学 | Method and device for realizing photoelectrochemical micro-etch processing of masked electrode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102709163A (en) * | 2012-05-24 | 2012-10-03 | 中山大学 | Wool preparing process by crystalline silicon based on laser interference induced reaction |
| CN102709163B (en) * | 2012-05-24 | 2016-02-24 | 中山大学 | A kind of crystalline silicon etching technique based on laser interference induced reaction |
| CN103395740A (en) * | 2013-08-02 | 2013-11-20 | 合肥工业大学 | Method for selectively preparing porous silicon based on silicon on insulator |
| CN104952947A (en) * | 2015-05-14 | 2015-09-30 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
| CN104952947B (en) * | 2015-05-14 | 2017-04-12 | 陕西师范大学 | Current-aided aluminum-doped zinc oxide film chemical texturing method |
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