CN102263179A - Light-emitting diode and backlight module and liquid crystal display device - Google Patents
Light-emitting diode and backlight module and liquid crystal display device Download PDFInfo
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- CN102263179A CN102263179A CN2010101948234A CN201010194823A CN102263179A CN 102263179 A CN102263179 A CN 102263179A CN 2010101948234 A CN2010101948234 A CN 2010101948234A CN 201010194823 A CN201010194823 A CN 201010194823A CN 102263179 A CN102263179 A CN 102263179A
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Abstract
The invention discloses a light-emitting diode, a backlight module and a liquid crystal display device. The liquid crystal display device comprises the backlight module and a liquid crystal display panel. The backlight module comprises an optical plate and a plurality of light-emitting diodes. Each light-emitting diode comprises a semiconductor layer, a first electrode and a second electrode. The semiconductor layer comprises a first type doped semiconductor layer, a luminous layer and a second type doped semiconductor layer, wherein the luminous layer is arranged between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is electrically connected with the first type doped semiconductor layer; and the second electrode is electrically connected with the second type doped semiconductor layer and is an optical grating which is suitable for enabling lights with first polarization directions to pass through and is also suitable for reflecting lights with second polarization directions, wherein the first polarization direction is vertical to the second polarization direction.
Description
Technical field
The present invention relates to a kind of light-emitting diode, backlight module and liquid crystal indicator, and particularly relate to light-emitting diode, backlight module and liquid crystal indicator that a kind of electrode is a grating.
Background technology
Along with the progress of modern semiconductors science and technology, light-emitting diode is used in a large number, to provide electronic installation required light source, for example: traffic sign, large-scale billboard, scanner, liquid crystal indicator etc.
General common light-emitting diode belongs to a kind of semiconductor element, and its material typically uses III-V family element such as gallium phosphide (GaP), GaAs (GaAs) etc.The principle of luminosity of light-emitting diode is to convert electrical energy into light, just above-mentioned compound semiconductor is applied electric current, by the combination in electronics, hole the kenel of energy with light is discharged, and then reaches luminous effect.Because light-emitting diode has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), reliability height, be fit to advantages such as volume production, therefore have to replace the traditional fluorescent lamp and the trend of incandescent lamp bulb with light-emitting diode.
Yet, when light-emitting diode is applied to need in the optical system of polarization light source (for example liquid crystal indicator), then must in optical system, add the polarization conversion member, make the light source that light-emitting diode produced produce light by the polarization conversion member with particular polarization direction.Fig. 1 is the schematic diagram of known a kind of liquid crystal indicator.Liquid crystal indicator 100 comprises backlight module 110, a plurality of polarizer 120 and display panels 130.The light that backlight module 110 is produced does not have special polarization state, but comprises the light that the P polarization combines with S polarization institute, therefore need be with polarizer 120 to obtain the light source that polarizes.
But, polarizer 120 not only makes the cost of whole liquid crystal indicator 100 increase, and the time through polarization conversion, the luminous energy of polarised direction parallel polarization sheet 120 penetrating shafts penetrates polarizer 120, the light of the penetrating shaft of polarised direction vertical polarization sheet 120 then can be polarized sheet 120 and absorb, and blocks most light so only have the light of part by polarizer 120.Therefore, make that the light source utilance of backlight module 110 is on the low side, also thereby cause the energy use efficiency of liquid crystal indicator 100 not high.
Summary of the invention
The invention provides a kind of light-emitting diode, have the light source of single polarization direction in order to generation.
The present invention provides a kind of backlight module in addition, in order to the light source of single polarization to be provided.
The present invention provides a kind of liquid crystal indicator again, has preferred light utilization efficiency.
The present invention proposes a kind of light-emitting diode, comprises semiconductor layer, first electrode and second electrode.Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.First electrode is electrically connected at the first type doping semiconductor layer, and second electrode is electrically connected at the second type doping semiconductor layer.Second electrode is a grating, is suitable for allowing the light with first polarization direction pass through, and is suitable for reflecting the light with second polarization direction.Wherein, first polarization direction is perpendicular to second polarization direction.
In an embodiment of the present invention, light-emitting diode also comprises substrate.The first type doping semiconductor layer is positioned on the substrate, and luminescent layer is positioned on the subregion of the first type doping semiconductor layer, and the second type doping semiconductor layer is positioned on the luminescent layer.First electrode is positioned at the first type doping semiconductor layer and does not dispose on the zone of luminescent layer, and second electrode is positioned on the second type doping semiconductor layer.In addition, the material of above-mentioned substrate for example comprises sapphire.In addition, above-mentioned substrate for example has the surface coarsening structure.
In an embodiment of the present invention, above-mentioned luminescent layer has the surface coarsening structure.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises InGaN (InGaN), and being suitable for sending wavelength is that (grating space of this second electrode is less than 390 nanometers at this moment for nanometer, ruddiness nm) for 625～630 nanometers.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530～535 nanometers, and the grating space of this second electrode is less than 290 nanometers at this moment.
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises gallium nitride (GaN), is suitable for sending the blue light that wavelength is 450～470 nanometers, and the grating space of this second electrode is less than 255 nanometers at this moment.
In an embodiment of the present invention, above-mentioned first electrode and the material of second electrode comprise metal.
In an embodiment of the present invention, light-emitting diode comprises that also encapsulation indicates, in order to show first polarization direction or second polarization direction.
The present invention proposes a kind of backlight module in addition, comprises optical sheet and a plurality of above-mentioned light-emitting diode.Optical sheet has incidence surface and exiting surface, and these light-emitting diodes are configured in by the incidence surface.
In the backlight module of embodiments of the invention, above-mentioned optical sheet is a light guide plate, and incidence surface is adjacent to exiting surface.
In the backlight module of embodiments of the invention, above-mentioned optical sheet is a diffuser plate, and incidence surface is relative with exiting surface.
The present invention provides a kind of liquid crystal indicator again, comprises above-mentioned backlight module and display panels.Display panels is disposed on the exiting surface.
In the liquid crystal indicator of embodiments of the invention, also comprise first polarizer, be configured on the display panels, and away from backlight module.
In the liquid crystal indicator of embodiments of the invention, also comprise second polarizer, be configured between this display panels and this backlight module.
It is the light-emitting diode of grating that the present invention adopts electrode, therefore can make light-emitting diode produce the light source with single polarization direction, and this light-emitting diode can be applicable to backlight module by the characteristic of grating.By in liquid crystal indicator, using this backlight module, significantly improve the service efficiency of light source.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the schematic diagram of known a kind of liquid crystal indicator.
Fig. 2 A is the light-emitting diode structure schematic diagram of the embodiment of the invention.
Fig. 2 B is the schematic diagram of light-emitting diode when luminous of Fig. 2 A.
Fig. 3 A is the schematic diagram of the backlight module of embodiments of the invention.
Fig. 3 B is the partial top view of the backlight module of Fig. 3 A.
Fig. 3 C is the profile of the backlight module of another embodiment of the present invention.
Fig. 4 is the schematic diagram of the liquid crystal indicator of embodiments of the invention.
Description of reference numerals
100: liquid crystal indicator
110: backlight module
120: polarizer
130: display panels
200: light-emitting diode
210: substrate
220: semiconductor layer
222: the first type doping semiconductor layers
224: luminescent layer
226: the second type doping semiconductor layers
230: the first electrodes
240: the second electrodes
250: lead
260: encapsulation indicates
300,300 ': backlight module
310,310 ': optical sheet
312,312 ': incidence surface
314,314 ': exiting surface
320: framework 400: liquid crystal indicator
410: display panels
420: the first polarizers
430: the second polarizers
440: housing
L: light
Lp: light with first polarization direction
Ls: light with second polarization direction
P: first polarization direction
Re: luminous again
Rs, Rs ': scattered light
S: second polarization direction
T: grating space
Embodiment
Fig. 2 A is the light-emitting diode structure schematic diagram of the embodiment of the invention.Please refer to Fig. 2 A, light-emitting diode 200 comprises substrate 210, semiconductor layer 220, first electrode 230 and second electrode 240.Substrate 210 materials can be sapphire, carborundum, silicon, GaAs or aluminium nitride, and the present invention does not do qualification to it.
Traditional light-emitting diode is to avoid metal to cover the light that light-emitting diode sends, and meaning is and is lifted out light quantity, adopt so can't use common metal transparency electrode (tin indium oxide, Indium Tin Oxide, ITO); Yet the resistance of transparency electrode is excessive, so need with bigger driven light-emitting diode.Make the temperature of light-emitting diode rise thus, its luminosity then can descend because of the temperature of light-emitting diode rises then again, and the energy of part is with the form loss of heat energy.
The present invention is because of being patterned as raster-like with second electrode 240, so second electrode 240 can use common metal, make that the light that light-emitting diode 200 sent can not covered by metal by second electrode, 240 bright dippings of raster-like, therefore can select metal opaque but that resistance is lower to use as second electrode 240, light-emitting diode 200 can be with less driven thus, temperature when reducing light-emitting diode 200 operations, and further promote the luminosity of light-emitting diode 200.
Explanation further again, in the present embodiment, light-emitting diode 200 also comprises the lead 250 that is connected in first electrode 230 and second electrode 240.Apply a voltage to first electrode 230 and second electrode 240 via lead 250, to drive the first type doping semiconductor layer 222 and the second type doping semiconductor layer 226 produces electronics and hole respectively.Simultaneously, luminous by electronics with moving and in luminescent layer 224, combining of hole.Fig. 2 B is the schematic diagram of light-emitting diode when luminous of Fig. 2 A.Please refer to Fig. 2 B, the light L that luminescent layer 224 is sent does not have single polarization direction, but can be divided into the first polarization direction P (for example P polarized light) and the second polarization direction S (for example S polarized light), and wherein the first polarization direction P perpendicular to the second polarization direction S.
The effect of second electrode 240 that presents by the form with grating makes the light Lp that has the first polarization direction P among the light L pass through, and the light Ls that has the second polarization direction S among the light L then is reflected.In the present embodiment, when the light Ls with second polarization direction S runs into luminescent layer 224 behind optical grating reflection, just can produce scattered light Rs.The polarization direction of this scattered light Rs no longer is same as light Ls originally, but have the first polarization direction P and the second polarization direction S simultaneously, when therefore light Rs incides grating, have the then penetrable grating of part light of the first polarization direction P among the light Rs, promote the light emission rate of polarized light.In addition, can be on luminescent layer 224 design surface alligatoring structure (not illustrating) to add the efficient of strong scattering.Because the material of grating is a metal, so it is bigger to satisfy the incidence angle angular range of polarization beam split.
Moreover the light Ls that reflexes to luminescent layer 224 from second electrode 240 also can be absorbed by luminescent layer 224, and sends the luminous again Re that has the first polarization direction P and the second polarization direction S simultaneously again.
On the other hand, light Ls also can penetrate luminescent layer 224 and be incident to the first type doping semiconductor layer 222 or substrate 210.When running into the first type doping semiconductor layer 222 or substrate 210, light Ls can produce scattered light Rs ', and the polarization direction of scattered light Rs ' no longer is same as light Ls originally, but have the first polarization direction P and the second polarization direction S simultaneously, light Rs ' is upward through luminescent layer 224 and is incident to grating, have the then penetrable grating of part light of the first polarization direction P this moment among the light Rs ', promote the light emission rate of polarized light.In addition, can on the first type doping semiconductor layer 222 or substrate 210, design and surface coarsening structure (not illustrating) is arranged to strengthen dispersion effect.
In the present embodiment, because second electrode 240 be grating, therefore can set its grating space T and adjust the exponent number of diffraction bright dipping, bright dipping is concentrated to be the forward bright dipping on 0 rank or to be controlled in the scope of needed rising angle to make on demand.For example: when semiconductor layer 220 materials are InGaN (InGaN), then being fit to send wavelength is that (this moment, grating space T needed less than 390 nanometers 625～630 nanometers for nanometer, ruddiness nm); When semiconductor layer 220 materials are InGaN (InGaN), then be fit to send the green glow that wavelength is 530～535 nanometers, this moment, grating space T needed less than 290 nanometers; When semiconductor layer 220 materials are gallium nitride (GaN), then be fit to send the blue light that wavelength is 450～470 nanometers, this moment, grating space T needed less than 255 nanometers.In this way, can adjust light by second electrode 240 based on 0 rank diffraction light.
Fig. 3 A is the schematic diagram of the backlight module of embodiments of the invention, and Fig. 3 B is the partial top view of the backlight module of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B, backlight module 300 comprises optical sheet 310 and a plurality of light-emitting diode 200 shown in Fig. 2 A.Optionally, the backlight module 300 of present embodiment also comprises framework 320.Optical sheet 310 has incidence surface 312 and exiting surface 314, and it is other that these light-emitting diodes 200 then are configured in incidence surface 312.
In the present embodiment, backlight module 300 is a direct type backlight module, on light-emitting diode 200 Configuration Frameworks 320 and be positioned at the below of optical sheet 310.Optical sheet 310 is a diffuser plate, and its incidence surface 312 is relative with exiting surface 314, the forward light source that is provided in order to homogenizing light-emitting diode 200.
Fig. 3 C is the profile of the backlight module of another embodiment of the present invention.Please refer to Fig. 3 C, the backlight module 300 ' of present embodiment is the lateral incident type backlight module, comprises optical sheet 310 ', a plurality of light-emitting diode 200 shown in Fig. 2 A.Optionally, the backlight module 300 of present embodiment also comprises framework 320.Optical sheet 310 ' is a light guide plate, has incidence surface 312 ' and exiting surface 314 ', and incidence surface 312 ' is adjacent with exiting surface 314 ', and it is other that light-emitting diode 200 then is configured in incidence surface 312 ', so that the light source of side incident to be provided.
Refer again to Fig. 3 B, light-emitting diode 200 comprises that also encapsulation indicates 260, in order to polarization direction that shows the light that light-emitting diode 200 is provided or the vertical direction that shows the polarization direction of the light that light-emitting diode 200 is provided, adjusted all light-emitting diodes 200 in order to subsequent technique and make the polarization direction energy of its light that provides consistent.When light-emitting diode 200 uses as the backlight of display, display can omit down polarizer and only get final product with upper polarizer, and make this encapsulation sign 260 consistent or vertical with the penetrating shaft direction of the upper polarizer of display, promptly the polarization luminous energy that sent of all light-emitting diodes 200 is consistent or vertical with the direction of the penetrating shaft of upper polarizer for meaning, lifting light source service efficiency.Certainly display also can not omit down polarizer, and the polarization luminous energy that all light-emitting diodes 200 are sent is consistent or vertical with the direction of the penetrating shaft of upper polarizer, to promote the contrast of display.In the present embodiment, backlight module 300 can provide the light source of single polarization direction because of adopting light-emitting diode 200.In addition, by adjusting the dimensions of light-emitting diode 200, the light direction of may command light-emitting diode 200 and make the light direction of the light source that backlight module 300 provided more concentrated also is to improve light extraction efficiency.
Fig. 4 is the schematic diagram of the liquid crystal indicator of embodiments of the invention.Please refer to Fig. 4, liquid crystal indicator 400 comprises backlight module 300 ' and display panels 410.In the present embodiment, liquid crystal indicator 400 applied backlight modules 300 ' are the lateral incident type backlight module, and display panels 410 is configured on the exiting surface 314 ' of backlight module 300 '.
In the present embodiment, liquid crystal indicator 400 also comprises first polarizer 420 and housing 440, wherein first polarizer 420 is configured on the display panels 410 and away from backlight module 300 ', and by housing 440 backlight module 300 ', display panels 410 and first polarizer 420 is fixed assembling.When backlight module 300 ' is applied to liquid crystal indicator 400, owing to the raising of backlight module 300 ' light extraction efficiency makes liquid crystal indicator 400 can have good display effect.
In the present embodiment, liquid crystal indicator 400 also comprises second polarizer 430, is configured between display panels 410 and the backlight module 300 ', has single polarization direction in order to guarantee the light that is passed to display panels 410.
In sum, light-emitting diode utilization of the present invention is optical grating construction with electrode design, scatters effect except promoting electric current, also can produce the light source with single polarization direction by the effect of grating.In addition, also can cooperate the light of different wave length and adjust grating space, concentrate light direction or suitably limit rising angle with the exponent number of control diffraction bright dipping.
In addition, the light that electrode reflected that is designed to raster mode all can destroyed its polarization direction originally when running into luminescent layer or substrate, have the scattered light of two kinds of polarization directions and produce again, thereby can allow and have wherein that a kind of light penetration of polarization direction is designed to the electrode of raster mode and is utilized.In addition, luminescent layer absorbs by behind the light that electrode reflected, and also can produce the light with two kinds of polarization directions again.By above-mentioned mechanism, thoroughly be utilized by to be allowed the light that light-emitting diode produced.
Therefore, no matter be to use light-emitting diode of the present invention in backlight module, or assemble this backlight module in liquid crystal indicator, the rate that is utilized of the light that backlight module provided that all can be improved, and then the display quality of lifting liquid crystal indicator because of the above-mentioned effect of light-emitting diode.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those of ordinary skill in the technical field under any; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (36)
1. light-emitting diode comprises:
Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer;
First electrode is electrically connected at this first type doping semiconductor layer; And
Second electrode, be electrically connected at this second type doping semiconductor layer, and this second electrode is grating, is suitable for allowing light pass through with first polarization direction, and be suitable for reflecting the light with second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction.
2. light-emitting diode as claimed in claim 1, also comprise substrate, wherein this first type doping semiconductor layer is positioned on this substrate, this luminescent layer is positioned on the subregion of this first type doping semiconductor layer, this second type doping semiconductor layer is positioned on this luminescent layer, this first electrode is positioned at this first type doping semiconductor layer and does not dispose on the zone of this luminescent layer, and this second electrode is positioned on this second type doping semiconductor layer.
3. light-emitting diode as claimed in claim 2, wherein the material of this substrate comprises sapphire.
4. light-emitting diode as claimed in claim 2, wherein this substrate has the surface coarsening structure.
5. light-emitting diode as claimed in claim 1, wherein this luminescent layer has the surface coarsening structure.
6. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625～630 nanometers, the grating space of this second electrode is less than 390 nanometers at this moment.
7. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530～535 nanometers, the grating space of this second electrode is less than 290 nanometers at this moment.
8. light-emitting diode as claimed in claim 1, wherein the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450～470 nanometers, the grating space of this second electrode is less than 255 nanometers at this moment.
9. light-emitting diode as claimed in claim 1, wherein the material of this first electrode and this second electrode comprises metal.
10. light-emitting diode as claimed in claim 1 comprises that also encapsulation indicates, in order to show this first polarization direction or this second polarization direction.
11. a backlight module comprises:
Optical sheet has incidence surface and exiting surface; And
A plurality of light-emitting diodes are configured in by this incidence surface, and respectively this light-emitting diode comprises:
Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer;
First electrode is electrically connected at this first type doping semiconductor layer; And
Second electrode, be electrically connected at this second type doping semiconductor layer, and this second electrode is grating, is suitable for allowing light pass through with first polarization direction, and be suitable for reflecting the light with second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction.
12. backlight module as claimed in claim 11, wherein this optical sheet is a light guide plate, and this incidence surface is adjacent to this exiting surface.
13. backlight module as claimed in claim 11, wherein this optical sheet is a diffuser plate, and this incidence surface is relative with this exiting surface.
14. backlight module as claimed in claim 11, wherein respectively this light-emitting diode also comprises substrate, respectively this first type doping semiconductor layer is positioned at respectively on this substrate, respectively this luminescent layer is positioned on the subregion of this first type doping semiconductor layer respectively, respectively this second type doping semiconductor layer is positioned at respectively on this luminescent layer, respectively this first electrode is positioned on the zone that this first type doping semiconductor layer respectively do not dispose this luminescent layer respectively, and respectively this second electrode is positioned at respectively on this second type doping semiconductor layer.
15. backlight module as claimed in claim 14, wherein the material of these a plurality of substrates comprises sapphire.
16. backlight module as claimed in claim 14, wherein respectively this substrate has the surface coarsening structure.
17. backlight module as claimed in claim 11, wherein respectively this luminescent layer has the surface coarsening structure.
18. backlight module as claimed in claim 11, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625～630 nanometers, and the grating space of this second electrode is less than 390 nanometers at this moment.
19. backlight module as claimed in claim 11, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530～535 nanometers, and the grating space of this second electrode is less than 290 nanometers at this moment.
20. backlight module as claimed in claim 11, wherein respectively the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450～470 nanometers, and the grating space of this second electrode is less than 255 nanometers at this moment.
21. backlight module as claimed in claim 11, wherein these a plurality of first electrodes comprise metal with the material of these a plurality of second electrodes.
22. backlight module as claimed in claim 11, wherein respectively this light-emitting diode comprises that also encapsulation indicates, in order to show this first polarization direction or this second polarization direction.
23. a liquid crystal indicator comprises:
Backlight module comprises:
Optical sheet has incidence surface and exiting surface; And
A plurality of light-emitting diodes are configured in by this incidence surface, and respectively this light-emitting diode comprises:
Semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer;
First electrode is electrically connected at this first type doping semiconductor layer; And
Second electrode, be electrically connected at this second type doping semiconductor layer, and this second electrode is grating, is suitable for allowing light pass through with first polarization direction, and be suitable for reflecting the light with second polarization direction, wherein this first polarization direction is perpendicular to this second polarization direction; And display panels, be configured on this exiting surface.
24. liquid crystal indicator as claimed in claim 23, wherein this optical sheet is a light guide plate, and this incidence surface is adjacent to this exiting surface.
25. liquid crystal indicator as claimed in claim 23, wherein this optical sheet is a diffuser plate, and this incidence surface is relative with this exiting surface.
26. liquid crystal indicator as claimed in claim 23, wherein respectively this light-emitting diode also comprises substrate, respectively this first type doping semiconductor layer is positioned on this substrate, respectively this luminescent layer is positioned on the subregion of this first type doping semiconductor layer respectively, respectively this second type doping semiconductor layer is positioned at respectively on this luminescent layer, respectively this first electrode is positioned on the zone that this first type doping semiconductor layer respectively do not dispose this luminescent layer respectively, and respectively this second electrode is positioned at respectively on this second type doping semiconductor layer.
27. liquid crystal indicator as claimed in claim 26, wherein the material of these a plurality of substrates comprises sapphire.
28. liquid crystal indicator as claimed in claim 26, wherein respectively this substrate has the surface coarsening structure.
29. liquid crystal indicator as claimed in claim 23, wherein respectively this luminescent layer has the surface coarsening structure.
30. liquid crystal indicator as claimed in claim 23, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the ruddiness that wavelength is 625～630 nanometers, and the grating space of this second electrode is less than 390 nanometers at this moment.
31. liquid crystal indicator as claimed in claim 23, wherein respectively the material of this semiconductor layer comprises InGaN, is suitable for sending the green glow that wavelength is 530～535 nanometers, and the grating space of this second electrode is less than 290 nanometers at this moment.
32. liquid crystal indicator as claimed in claim 23, wherein respectively the material of this semiconductor layer comprises gallium nitride, is suitable for sending the blue light that wavelength is 450～470 nanometers, and the grating space of this second electrode is less than 255 nanometers at this moment.
33. liquid crystal indicator as claimed in claim 23, wherein these a plurality of first electrodes comprise metal with the material of these a plurality of second electrodes.
34. liquid crystal indicator as claimed in claim 23, wherein respectively this light-emitting diode comprises that also encapsulation indicates, in order to show this first polarization direction or this second polarization direction.
35. liquid crystal indicator as claimed in claim 23 also comprises first polarizer, is configured on this display panels, and away from this backlight module.
36. liquid crystal indicator as claimed in claim 35 also comprises second polarizer, is configured between this display panels and this backlight module.
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| CN106842601B (en) * | 2017-03-06 | 2019-12-24 | 京东方科技集团股份有限公司 | Three-dimensional display system and method |
| US11134237B2 (en) | 2017-03-06 | 2021-09-28 | Boe Technology Group Co., Ltd. | Three-dimensional display system and method |
| CN107544180A (en) * | 2017-09-26 | 2018-01-05 | 京东方科技集团股份有限公司 | Light emitting diode, backlight module and liquid crystal display device |
| US10566505B2 (en) | 2017-09-26 | 2020-02-18 | Boe Technology Group Co., Ltd. | Light-emitting diode, backlight module, and liquid crystal display device |
| WO2020062417A1 (en) * | 2018-09-27 | 2020-04-02 | 武汉华星光电技术有限公司 | Flip chip, planar light source and display apparatus using planar light source |
| US12021176B2 (en) | 2018-09-27 | 2024-06-25 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Flip chip, surface light source, and display device using surface light source thereof |
| CN112882287A (en) * | 2021-01-15 | 2021-06-01 | 北海惠科光电技术有限公司 | Backlight module and display device |
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| CN102263179B (en) | 2016-01-20 |
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