CN102130051A

CN102130051A - Light-emitting diode and manufacturing method thereof

Info

Publication number: CN102130051A
Application number: CN2010100046948A
Authority: CN
Inventors: 徐宸科; 余学志; 苏文正; 欧震
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2010-01-20
Filing date: 2010-01-20
Publication date: 2011-07-20

Abstract

The invention discloses a light-emitting diode and a manufacturing method thereof. The method at least comprises the following steps of: providing a substrate; forming a plurality of luminescent laminated layers on the substrate; and forming a plurality of inner scattering centers inside the substrate by using laser.

Description

Light-emitting diode and manufacture method thereof

Technical field

The present invention relates to a kind of light-emitting component, particularly relate to a kind of light-emitting component and manufacture method thereof that has the scattering-in center about substrate.

Background technology

Light-emitting diode (light-emitting diode, LED) principle of luminosity is the energy difference that utilizes electronics to move between n N-type semiconductor N and p N-type semiconductor N, form with light discharges energy, such principle of luminosity is different from the principle of luminosity of incandescent lamp heating, so light-emitting diode is called as cold light source.In addition, light-emitting diode has advantages such as high-durability, the life-span is long, light and handy, power consumption is low, therefore illumination market is now placed high hopes for light-emitting diode, it is considered as the illuminations of a new generation, replace conventional light source gradually, and be applied to various fields, as traffic sign, backlight module, street lighting, Medical Devices etc.

Fig. 1 is known light emitting element structure schematic diagram, as shown in Figure 1, known light-emitting component 100, include transparency carrier 10, be positioned at semiconductor laminated 12 on the transparency carrier 10, and at least one electrode 14 is positioned on above-mentioned semiconductor laminated 12, wherein above-mentioned semiconductor laminated 12 from top to bottom comprise first conductive-type semiconductor layer 120, active layer 122 at least, and second conductive-type semiconductor layer 124.

In addition, above-mentioned light-emitting component 100 can also be connected with other elements combination further to form light-emitting device (light-emitting apparatus).Fig. 2 is known luminous device structure schematic diagram, and as shown in Figure 2, light-emitting device 200 comprises the inferior carrier (sub-mount) 20 with at least one circuit 202; At least one scolder (solder) 22 is positioned on above-mentioned carrier 20, is fixed in above-mentioned light-emitting component 100 bondings on time carrier 20 and the substrate 10 of light-emitting component 100 is electrically connected with circuit 202 formation on time carrier 20 by this scolder 22; And electric connection structure 24 is with the electrode 14 of electric connection light-emitting component 100 and the circuit 202 on time carrier 20; Wherein, above-mentioned inferior carrier 20 can be that lead frame (leadframe) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for light-emitting device 200 and improve its radiating effect.

Yet, as shown in Figure 1, in known light-emitting component 100, because the surface of transparency carrier 10 is a flat surface, and the refractive index of transparency carrier 10 is different with the refractive index of external environment condition, so the light A that sent of active layer 122 forms total reflection (TotalInternal Reflection when entering external environment condition by substrate easily, TIR), reduce the light extraction efficient of light-emitting component 100.

Summary of the invention

The object of the present invention is to provide light-emitting diode and manufacture method thereof, to address the above problem.

The object of the present invention is achieved like this, and a kind of method of manufacturing luminescent device promptly is provided, and its step comprises at least: substrate is provided, forms a plurality of luminous being stacked on the substrate, and form a plurality of scattering-ins center with laser in substrate inside.

Description of drawings

Fig. 1 is known light emitting element structure schematic diagram.

Fig. 2 is known luminous device structure schematic diagram.

Fig. 3 A to Fig. 3 J is a manufacturing process structural representation of the present invention.

Description of reference numerals

100: light-emitting component 10: transparency carrier

12: semiconductor laminated 14: electrode

Conductive-type semiconductor layer 122 in 120: the first: active layer

Conductive-type semiconductor layer 200 in 124: the second: light-emitting device

20: inferior carrier 202: circuit

22: scolder 24: electric connection structure

30: substrate 302: first surface

304: second surface 32: luminous lamination

Conductive-type semiconductor layer 312 in 310: the first: active layer

Conductive-type semiconductor layer 36 in 314: the second: the scattering-in center

300: light-emitting component 361: laser

38: oxidic, transparent, conductive layers 40: electrode

Embodiment

The present invention discloses a kind of light-emitting component and manufacture method thereof, and is more detailed and complete in order to make narration of the present invention, please refer to the accompanying drawing of following description and cooperation Fig. 3 A to Fig. 3 J.

Fig. 3 A to Fig. 3 J is a manufacturing process structural representation of the present invention, as shown in Figure 3A, provides substrate 30, and wherein substrate 30 comprises first surface 302 and second surface 304, and wherein first surface 302 is relative with second surface 304; Then, shown in Fig. 3 B, form a plurality of semiconductor epitaxial layers 31 on the first surface 302 of this substrate 30, wherein semiconductor epitaxial layers 31 from bottom to top comprises first conductive-type semiconductor layer 310, active layer 312 at least, and second conductive-type semiconductor layer 314.

Subsequently, shown in Fig. 3 C, utilize the above-mentioned semiconductor epitaxial layers 31 of photoengraving lithography etching, with exposed part substrate 30 and make semiconductor epitaxial layers 31 form the luminous lamination 32 of a plurality of shape structures, wherein first conductive-type semiconductor layer 310 of each luminous lamination 32 equal exposed part.

Subsequently, shown in Fig. 3 D, can form at least one electrode 40 on luminous lamination 32.In an embodiment, also can between luminous lamination 32 and electrode, optionally form oxidic, transparent, conductive layers 38 (Transparent Conductive Oxide, TCO).

Subsequently, shown in Fig. 3 E-Fig. 3 F, with laser energy 0.05～0.35W, speed 100～600mm/sec and focal length are the second surface 304 apart from the laser beam irradiation substrate 30 of substrate 10-20 μ m, to form the inner alligatoring structure of a plurality of substrates as scattering-in center 36 (scattering center), its length is about 1～25 μ m, width is about 2～5 μ m, shape can be round point shape, cuboid or other figures, and any end at wherein above-mentioned scattering-in center 36 upper and lower surface of contact substrate 30 not.When reverberation is got to above-mentioned scattering-in center 36, can produce scattering and increase lighting angle, reduce the absorption of 40 pairs of light of electrode, to increase light output.In an embodiment, this laser beam can be infrared laser, for example can be Nd-YAG laser, Nd-YVO ₄Laser, Nd-YLF laser or titanium sapphire laser (titanium laser).Shown in Fig. 3 F, 3G, above-mentioned scattering-in center 36 can the rule or arbitrarily be distributed in the substrate, comprise electrode 40 belows.In an embodiment, with above-mentioned manufacture method, but shown in Fig. 3 H also contact substrate sidewall of the part-structure at above-mentioned scattering-in center 36.

At last, for another example shown in Fig. 3 I, at the second surface 304 of substrate 30 with laser 361 splittings.For another example shown in Fig. 3 J, to form a plurality of light-emitting components 300.

In an embodiment, also can be behind the luminous lamination 32 that forms a plurality of shape structures, elder generation is with the second surface 304 of laser beam irradiation substrate 30, to form the inner alligatoring structure of a plurality of substrates, on luminous lamination 32, form electrode 40 afterwards again as scattering-in center 36 (scattering center).

In an embodiment, in substrate, the having the scattering-in center 36 of light-emitting component 300, four sidewalls of substrate can be all essence out-of-flatness surface.In another preferred embodiment, light-emitting component 300 can be all essence out-of-flatness surface except four sidewalls of substrate, and first surface 302 also can be essence out-of-flatness surface.

The material of above-mentioned substrate 30 can be sapphire (Sapphire), zinc oxide transparency carriers such as (ZnO), then adopts sapphire substrate in the present embodiment; And luminous lamination 32 from bottom to top comprises first conductive-type semiconductor layer 310, active layer 312 and second conductive-type semiconductor layer 314, the material that its material comprises one or more is selected from the group that gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) are constituted, such as gallium nitride (GaN) series material or AlGaInP (AlGaInP) series material etc.

In addition, the material of oxidic, transparent, conductive layers 38 is selected from the material that comprises one or more and is selected from the group that tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), antimony oxide zinc (AZO) and zinc oxide (ZnO) are constituted.

Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose under making the invention technology in the field those of ordinary skill can understand content of the present invention and implement according to this, when can not with qualification claim of the present invention, promptly equivalent variations or the modification of doing according to disclosed spirit generally must be encompassed in the claim of the present invention.

Claims

1. method of manufacturing luminescent device, its step comprises at least:

Substrate is provided;

Form at least one luminous being stacked on this substrate;

Form a plurality of scattering-ins center with laser in this substrate inside; And

Form at least one electrode on this luminous lamination, wherein this electrode below has to the described scattering-in of small part center.

2. method of manufacturing luminescent device, its step comprises at least:

Substrate is provided;

Form at least one luminous being stacked on this substrate; And

In the inner a plurality of scattering-ins center that forms of this substrate, wherein the material of this luminous lamination material that comprises one or more is selected from the group that gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) are constituted with laser.

3. method of manufacturing luminescent device as claimed in claim 1 or 2, wherein this laser can be infrared laser.

4. method of manufacturing luminescent device as claimed in claim 3, wherein this infrared laser can be Nd-YAG laser, Nd-YVO ₄Laser, Nd-YLF laser or titanium sapphire laser, and wherein this laser energy can be 0.05～0.35W, and speed can be 100～600 mm/sec.

5. method of manufacturing luminescent device as claimed in claim 1 or 2 wherein forms the step of this luminous lamination, comprises at least:

Form first conductive-type semiconductor layer on this substrate;

Form active layer on this first conductive-type semiconductor layer;

Form second conductive-type semiconductor layer on this active layer;

Utilize this first conductive-type semiconductor layer of photoengraving lithography etching, this active layer and this second conductive-type semiconductor layer, to form the luminous lamination of at least one shape structure.

6. method of manufacturing luminescent device as claimed in claim 1 or 2, the length at wherein said scattering-in center are about 1～25 μ m or width is about 2～5 μ m.

7. method of manufacturing luminescent device as claimed in claim 1 or 2, the shape at wherein said scattering-in center can be round point shape, cuboid or other figures.

8. method of manufacturing luminescent device as claimed in claim 1 or 2, wherein said scattering-in center can be arbitrarily or regular distribution in substrate inside or the contact substrate sidewall.

9. light-emitting component comprises at least:

Substrate, wherein this substrate inside comprises a plurality of scattering-ins center;

At least one luminous lamination is formed on this substrate; And

At least one electrode is formed on this luminous lamination, and wherein this a plurality of scattering-ins center to small part is positioned under this electrode.

10. light-emitting component comprises at least:

Substrate, wherein this substrate inside comprises a plurality of scattering-ins center; And

At least one luminous lamination is formed on this substrate, and wherein the material of this luminous lamination material that comprises one or more is selected from gallium, aluminium, indium, arsenic, phosphorus, nitrogen and group that silicon constitutes.

11. as claim 9 or 10 described light-emitting components, the length at wherein said scattering-in center is about 1～25 μ m or width is about 2～5 μ m.

12. as claim 9 or 10 described light-emitting components, the shape at wherein said scattering-in center can be round point shape, cuboid or other figures.

13. as claim 9 or 10 described light-emitting components, wherein said scattering-in center can be arbitrarily or regular distribution in substrate inside or the contact substrate sidewall.

14. as claim 9 or 10 described light-emitting components, wherein this luminous lamination comprises at least:

First conductive-type semiconductor layer is positioned on this substrate;

Active layer is positioned on this first conductive-type semiconductor layer of part; And

Second conductive-type semiconductor layer is positioned on this active layer.

15. as claim 9 or 10 described light-emitting components, wherein this substrate surface can be essence out-of-flatness surface.