CN101859840A - Light-emitting diode (LED) structure - Google Patents
Light-emitting diode (LED) structure Download PDFInfo
- Publication number
- CN101859840A CN101859840A CN200910131546A CN200910131546A CN101859840A CN 101859840 A CN101859840 A CN 101859840A CN 200910131546 A CN200910131546 A CN 200910131546A CN 200910131546 A CN200910131546 A CN 200910131546A CN 101859840 A CN101859840 A CN 101859840A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- semiconductor layer
- photonic crystal
- light emitting
- type doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a light-emitting diode (LED) structure which comprises a substrate, a first doped semiconductor layer, a first electrode, a light-emitting layer, a second doped semiconductor layer and a second electrode, wherein the substrate is provided with a surface and a plurality of cylindrical photon crystals positioned on the surface; the first doped semiconductor layer is arranged on the substrate to cover the photon crystals; the light-emitting layer, the second doped semiconductor layer and the second electrode are sequentially arranged on part of the first doped semiconductor layer; and the first electrode is arranged on part of the first doped semiconductor layer on which the light-emitting layer is not covered. Because the substrate provided with the photon crystals can improve the epitaxial quality of the first doped semiconductor layer and increase the light energy of the forward ejected LED structure, the light-emitting efficiency of the LED structure can be effectively improved.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of light emitting diode construction.
Background technology
Because embracing, light-emitting diode and conventional lights relatively have absolute advantage, for example volume is little, life-span is long, low-voltage/current drives, be difficult for breaking, there is not significant heat problem when luminous, do not contain mercury (not having pollution problem), the good characteristics such as (power savings) of luminous efficiency, and the luminous efficiency of light-emitting diode improved constantly in recent years, therefore oneself replaces fluorescent lamp and white heat bulb to light-emitting diode gradually in some field, for example needs the scanner lamp source of reaction at a high speed, the Dashboard illumination of Backlight For Liquid Crystal Display Panels or front light-source automobile, traffic lights and general lighting device etc.
And because nitrogenous III-V compounds of group is the material of broadband energy gap, its emission wavelength can be contained to ruddiness from ultraviolet light always, can say so and almost contain the wave band of whole visible light.Therefore, utilize the compound semiconductor of nitrogen gallium, oneself is widely used in the various light emitting modules as the light-emitting diode of gallium nitride (GaN), aluminium gallium nitride alloy (GaAlN), InGaN (GaInN) etc.
Fig. 1 is the generalized section of known light emitting diode construction.Please refer to Fig. 1, light emitting diode construction 100 is made of substrate 110, n type doping semiconductor layer 120, electrode 122, luminescent layer 130, p type doping semiconductor layer 140, ohmic contact layer 150 and electrode 142.Wherein, n type doping semiconductor layer 120, luminescent layer 130, p type doping semiconductor layer 140, ohmic contact layer 150 and electrode 142 are to be set in turn on the substrate 110, and luminescent layer 130 only covers the n type doping semiconductor layer 120 of part, and electrode 122 promptly is arranged on not on the n type doping semiconductor layer 120 that is covered by luminescent layer 130.
Please continue with reference to Fig. 1, the electronics that is provided when n type doping semiconductor layer 120 combines in luminescent layer 130 with the hole that p type doping semiconductor layer 140 is provided again, and thereby produce after the light 102, part light 102 can penetrate ohmic contact layer 150 and substrate 110, and the upper and lower of past light emitting diode construction 100 penetrates respectively.In addition, 102 of light of another part can be by substrate 110 surfaces or electrode 142 boundary reflection with p type doping semiconductor layer 140, and between n type doping semiconductor layer 120 to p type doping semiconductor layers 140 lateral transport.At this moment, the energy that light 102 has part is absorbed by n type doping semiconductor layer 120, p type doping semiconductor layer 140, electrode 122 or electrode 142, causes the external quantum efficiency of light emitting diode construction 100 to reduce.
For addressing the above problem, Japanese patent laid-open 11-274568 communique is by technologies such as mechanical lapping and etchings, the substrate surface of alligatoring light emitting diode construction at random is scattered so that desire to inject the light of substrate, and then improves the external quantum efficiency of light emitting diode construction.
Yet at random the alligatoring substrate surface in fact also can't improve the external quantum efficiency of light emitting diode construction effectively.On the one hand be because when the recess patterns on the substrate surface or raised design are excessive, will cause the crystallinity of the n type doping semiconductor layer of on this surface, growing to reduce, thereby reduce the internal quantum of this light emitting diode construction, cause external quantum efficiency to improve.Then be because at random the alligatoring substrate surface will cause that the light energy of lateral transport is easier to be absorbed by this coarse surface on the other hand, cause penetrating the light attenuation of light emitting diode construction, thereby can't reach enough external quantum efficiencies.
Summary of the invention
The technical problem to be solved in the present invention has provided a kind of light emitting diode construction, and it can improve epitaxial quality, can also reduce the light that transmits along substrate surface, increases the luminous efficiency of light emitting diode construction.
For solving the problems of the technologies described above, technical scheme of the present invention comprises: substrate has surperficial and a plurality of described lip-deep cylindric photonic crystals that are positioned at; The first type doping semiconductor layer is arranged on the described substrate to cover above-mentioned photonic crystal; Luminescent layer is arranged on the described first type doping semiconductor layer of part; The second type doping semiconductor layer is arranged on the described luminescent layer; First electrode is arranged on the described first type doping semiconductor layer of the part that is not coated with described luminescent layer; Second electrode is arranged on the described second type doping semiconductor layer.
Beneficial effect of the present invention is: form photonic crystal on the substrate surface of light emitting diode construction, to improve the epitaxial quality of the first type doping semiconductor layer, increase the internal quantum of light emitting diode construction.In addition, photonic crystal of the present invention can also increase the light energy that forward penetrates light emitting diode construction, to improve the external quantum efficiency of light emitting diode construction.Therefore, light emitting diode construction of the present invention has good illumination efficiency.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is the generalized section of known light emitting diode construction.
Fig. 2 is the generalized section of light emitting diode construction of the present invention.
Fig. 3 A to Fig. 3 K is respectively the arrangement form schematic top plan view of photonic crystal in each embodiment of Fig. 2.
Description of reference numerals among the figure:
100,200 is light emitting diode construction, and 102 is light, and 110,210 is substrate,
120 is n type doping semiconductor layer, and 122,142,222,242 is electrode,
130,230 is luminescent layer, and 140 is the type doping semiconductor layer,
150,250 is ohmic contact layer, and 202 is the surface,
204,204a, 204b are photonic crystal, and 220 is the first type doping semiconductor layer,
240 is the second type doping semiconductor layer.
Embodiment
Fig. 2 is the generalized section of light emitting diode construction of the present invention.Please refer to Fig. 2, light emitting diode construction 200 is made of with electrode 242 substrate 210, the first type doping semiconductor layer 220, electrode 222, luminescent layer 230, the second type doping semiconductor layer 240.Wherein, the material of substrate 210 for example is silicon, sapphire, carborundum or spinelle, and substrate 210 has surface 202 and a plurality of cylindric photonic crystal (photonic crystal) 204 that is positioned on the surface 202.
From the above, photonic crystal 204 for example is raised design or groove, and the method that forms these photonic crystals 204 for example is that substrate 210 is carried out photoetching and etch process, forms columned raised design or groove on its surface 202.Specifically, photonic crystal 204 is periodically to be arranged on the surface 202 of substrate 210, and the spacing (pitch) of two adjacent photonic crystals for example is between 0.5 micron to 10 microns.
In addition, the diameter of photonic crystal 204 for example is between 0.25 micron to 5 microns.And these photonic crystals are between 0.2 micron to 3 microns in the size on the direction on the surface of vertical substrate.In other words, the height that is the photonic crystal of raised design for example is between 0.2 micron to 3 microns, and the degree of depth that is the photonic crystal of groove also for example is between 0.2 micron to 3 microns.
Please continue with reference to Fig. 2, the first type doping semiconductor layer 220 is to be arranged on the substrate 210, to cover these photonic crystals 204.Specifically, the first type doping semiconductor layer 220 is formed on the boss on surface 202 of substrate 210, and does not insert in the groove.What deserves to be mentioned is, in the technology that forms the first type doping semiconductor layer 220, these periodically are arranged in the crystal defect that photonic crystal 204 on the surface 202 of substrate 210 can suppress the locality of the first type doping semiconductor layer 220, and improve its epitaxial quality and arrange, and then improve the internal quantum of light emitting diode construction 200 to reduce difference.
Please referring again to Fig. 2, luminescent layer 230, the second type doping semiconductor layer 240 are to be set in turn on the first type doping semiconductor layer 220 of part with electrode 242, and electrode 222 then is to be arranged at not on the part first type doping semiconductor layer 220 that is covered by luminescent layer 230.In the present embodiment, the first type doping semiconductor layer 220 for example is a n type doping semiconductor layer, and the second type doping semiconductor layer 240 for example is a p type doping semiconductor layer.Certainly, in other embodiments, the first type doping semiconductor layer 220 also can be a p type doping semiconductor layer, and this moment, 240 of the second type doping semiconductor layers were n type doping semiconductor layer.In addition, luminescent layer 230 for example is Multiple Quantum Well (multi-quantum Well) layer.
And the first type doping semiconductor layer 220, luminescent layer 230 and the second type doping semiconductor layer 240 are made of the III-V group iii v compound semiconductor material.With present embodiment, the material of the first type doping semiconductor layer 220, luminescent layer 230 and the second type doping semiconductor layer 240 for example is gallium nitride, gallium phosphide or gallium arsenide-phosphide.
In addition, present embodiment also is provided with ohmic contact layer 250 between the electrode 242 and the second type doping semiconductor layer 240, in order to improve the conduction uniformity of electric current at the first type doping semiconductor layer 220, luminescent layer 230 and the second type doping semiconductor layer 240.In the present embodiment, ohmic contact layer 250 for example is a p type ohmic contact layer.
These periodically are arranged in photonic crystal 204 on the surface 202 of substrate 210 except the epitaxial quality that can improve the first type doping semiconductor layer 220, the light of lateral transport between the first type doping semiconductor layer 220 and the second type doping semiconductor layer 220 can also be led and be forward light, so that its forward penetrates light emitting diode construction 200, and then improve the external quantum efficiency of light emitting diode construction 200.It should be noted that photonic crystal 204 of the present invention has multiple periodic arrangement form, hereinafter will illustrate the arrangement form of these photonic crystals 204.
Fig. 3 A to Fig. 3 K is respectively the arrangement form schematic top plan view of photonic crystal in each embodiment of Fig. 2.Please refer to Fig. 3 A, in first embodiment, photonic crystal 204 for example is the matrix that is arranged in m * n.Wherein, m and n are positive integer.Specifically, the diameter of these photonic crystals 204 can be the same or different.With the photonic crystal 204 of m * n matrix, the photonic crystal 204 of odd column can be to have different diameters with the photonic crystal 204 of even column, shown in Fig. 3 B.In addition, shown in Fig. 3 C, be positioned at m * n matrix (p, the photonic crystal of q) locating 204 also can be be positioned at (p+1, q) and (p, the photonic crystal of q+1) locating has different diameters.Wherein p, q are positive integer, and 1≤p≤m-1, and 1≤q≤n-1.
Except the arrangement mode of matrix form, photonic crystal 204 also can be arranged in the form that even column and odd column do not line up on line direction.For instance, shown in Fig. 3 D, the photonic crystal 204 of each odd column is alignment mutually on line direction, and the photonic crystal 204 of even column then is the interval (space) that corresponds in the odd column 204 of two adjacent photonic crystals respectively.Certainly, the photonic crystal 204 of even column also can be to have different diameters with the photonic crystal 204 of odd column, shown in Fig. 3 E.
In Fig. 3 A to Fig. 3 E, the arrangement pitches (pitch) of the photonic crystal 204 of even column is identical with the arrangement pitches of the photonic crystal 204 of odd column, but in other embodiments, the photonic crystal 204 of even column also can have different arrangement pitches with the photonic crystal 204 of odd column.Shown in Fig. 3 F and Fig. 3 G, the arrangement pitches of the photonic crystal 204 of even column for example is the twice of the photonic crystal of odd column, and the photonic crystal 204 of even column for example is the interval that corresponds in the odd column 204 of two adjacent photonic crystals respectively.It should be noted that so-called spacing is meant the distance of center circle of two adjacent photonic crystals 204 in each row, then is meant the distance that two adjacent photonic crystals 204 are separated by at interval herein.
In more detail, among Fig. 3 F except the photonic crystal 204 of odd column on the line direction mutually the alignment, the photonic crystal 204 of even column also is alignment mutually on line direction.In addition, the photonic crystal 204 of each odd column is alignment mutually on line direction among Fig. 3 G, and the photonic crystal 204 of the even column of k row then is the interval corresponding to 204 of photonic crystals adjacent in odd column and the k+1 row even column.More particularly, other embodiments of the invention can also form the less photonic crystal 204a of diameter in 204 of adjacent photonic crystals, as Fig. 3 H and shown in Figure 31 respectively in the even column of Fig. 3 F and Fig. 3 G.
In addition, photonic crystal 204 of the present invention can also be to be arranged on the surface of substrate with honey comb like arrangement form, shown in Fig. 3 J.And in another embodiment, these photonic crystals 204 also can be that a part is arranged in honeycomb, and the photonic crystal 204b of another part then is arranged in honey comb like photonic crystal 204a by these and centers on, shown in Fig. 3 K.Wherein, the diameter of photonic crystal 204a for example is the diameter greater than photonic crystal 204b.
Need to prove that at this only in order to illustrate that photonic crystal 204 of the present invention can be to have periodic arrangement form and be arranged on the surface 202 of substrate 210 with any, it is not in order to limit the arrangement mode of photonic crystal 204 of the present invention to Fig. 3 A to Fig. 3 K.
Below will list the luminous power experimental data that light emitting diode construction of the present invention has the photonic crystal of Fig. 3 A to Fig. 3 K, understand light emitting diode construction of the present invention and the difference of known light emitting diode construction on luminous efficiency so that the person of ordinary skill in the field more can know with table 1 and table 2.Wherein, table 1 is that the light-emitting diode bare chip (bare chip) with live width 465nm of the present invention is done test, and table 2 item is to do test again after light-emitting diode of the present invention is encapsulated, and the measuring current of input is 20 milliamperes.In addition, the luminous power in table 1 and the table 2 all is that the light emitting diode construction with known Fig. 1 is the relative value of benchmark.
Table 1
Table 2
Can know by table 1 and table 2 and to learn that light emitting diode construction of the present invention and by contrast known has preferable luminous efficiency.
In sum, light emitting diode construction of the present invention is the cylindric photonic crystal that is formed with periodic arrangement on substrate surface, and makes substrate surface have periodic refractive index.Therefore, when light that luminescent layer sent is passed to substrate surface, can above or below substrate, be penetrated by these photonic crystal institute diffraction (diffraction), with the light energy of minimizing light lateral transport time institute loss between the first type doping semiconductor layer and the second type doping semiconductor layer, and then the external quantum efficiency of raising light-emitting diode.
In addition, the photonic crystal on substrate surface can also suppress the local-crystalized defective of the first type doping semiconductor layer formed thereon, and improves epitaxial quality reducing difference row, and then improves the internal quantum of light-emitting diode.Hence one can see that, and light emitting diode construction of the present invention has good illumination efficiency.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (20)
1. a light emitting diode construction is characterized in that, comprising:
Substrate has surperficial and a plurality of described lip-deep cylindric photonic crystals that are positioned at;
The first type doping semiconductor layer is arranged on the described substrate to cover above-mentioned photonic crystal;
Luminescent layer is arranged on the described first type doping semiconductor layer of part;
The second type doping semiconductor layer is arranged on the described luminescent layer;
First electrode is arranged on the described first type doping semiconductor layer of the part that is not coated with described luminescent layer;
And
Second electrode is arranged on the described second type doping semiconductor layer.
2. light emitting diode construction as claimed in claim 1 is characterized in that, also comprises ohmic contact layer, is arranged between described second type doping semiconductor layer and described second electrode.
3. light emitting diode construction as claimed in claim 1 is characterized in that, the diameter difference of above-mentioned photonic crystal.
4. light emitting diode construction as claimed in claim 1 is characterized in that the diameter of above-mentioned photonic crystal is identical.
5. light emitting diode construction as claimed in claim 1 is characterized in that, above-mentioned photonic crystal comprises at least a in raised design and the groove.
6. light emitting diode construction as claimed in claim 1 is characterized in that, above-mentioned photonic crystal is the matrix that is arranged in m * n on the described surface of described substrate, and m, n are all positive integer.
7. light emitting diode construction as claimed in claim 1, it is characterized in that, above-mentioned photonic crystal is to be arranged in multiple row odd column and multiple row even column, and the above-mentioned photonic crystal of each described even column is corresponding to the interval between above-mentioned photonic crystal adjacent in the above-mentioned odd column.
8. light emitting diode construction as claimed in claim 7 is characterized in that, the arrangement pitches of the above-mentioned photonic crystal of above-mentioned odd column is different with the arrangement pitches of the above-mentioned photonic crystal of above-mentioned even column.
9. light emitting diode construction as claimed in claim 8, the above-mentioned photonic crystal that it is characterized in that above-mentioned odd column is to be aligned in each other, and the above-mentioned photonic crystal of k row even column is corresponding to the interval between above-mentioned photonic crystal adjacent in above-mentioned odd column and the k+1 row even column, and wherein k is a positive integer.
10. light emitting diode construction as claimed in claim 1 is characterized in that, above-mentioned photonic crystal is to be arranged in honeycomb on the described surface of described substrate.
11. light emitting diode construction as claimed in claim 1 is characterized in that, a part of above-mentioned photonic crystal is to be arranged in honeycomb on the described surface of described substrate, and around the above-mentioned photonic crystal of another part.
12. light emitting diode construction as claimed in claim 11 is characterized in that, the diameter that is arranged in honey comb like above-mentioned photonic crystal is the diameter greater than all the other above-mentioned photonic crystals.
13. light emitting diode construction as claimed in claim 1 is characterized in that, described substrate comprises sapphire, carborundum, spinelle or silicon substrate.
14. light emitting diode construction as claimed in claim 1 is characterized in that, above-mentioned photonic crystal is between 0.2 micron to 3 microns in the size on the direction on the described surface of vertical described substrate.
15. light emitting diode construction as claimed in claim 1 is characterized in that, the diameter of above-mentioned photonic crystal is between 0.25 micron to 5 microns.
16. light emitting diode construction as claimed in claim 1 is characterized in that, the spacing of adjacent above-mentioned photonic crystal is between 0.5 micron to 10 microns.
17. light emitting diode construction as claimed in claim 1 is characterized in that, the material of the described first type doping semiconductor layer, described luminescent layer and the described second type doping semiconductor layer comprises the III-V group iii v compound semiconductor material.
18. light emitting diode construction as claimed in claim 17 is characterized in that, described III-V group iii v compound semiconductor material comprises gallium nitride, gallium phosphide or gallium arsenide phosphide.
19. light emitting diode construction as claimed in claim 1 is characterized in that, the described first type doping semiconductor layer is a n type doping semiconductor layer, and the described second type doping semiconductor layer is a p type doping semiconductor layer.
20. light emitting diode construction as claimed in claim 1 is characterized in that, the described first type doping semiconductor layer is a p type doping semiconductor layer, and the described second type doping semiconductor layer is a n type doping semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910131546A CN101859840A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910131546A CN101859840A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101859840A true CN101859840A (en) | 2010-10-13 |
Family
ID=42945603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910131546A Pending CN101859840A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101859840A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009139A (en) * | 2014-06-11 | 2014-08-27 | 海迪科（南通）光电科技有限公司 | Regional photonic crystal light emitting diode device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200705706A (en) * | 2005-07-25 | 2007-02-01 | Formosa Epitaxy Inc | Light emitting diode structure |
-
2009
- 2009-04-07 CN CN200910131546A patent/CN101859840A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200705706A (en) * | 2005-07-25 | 2007-02-01 | Formosa Epitaxy Inc | Light emitting diode structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009139A (en) * | 2014-06-11 | 2014-08-27 | 海迪科（南通）光电科技有限公司 | Regional photonic crystal light emitting diode device |
| CN104009139B (en) * | 2014-06-11 | 2016-08-24 | 海迪科（南通）光电科技有限公司 | Region photonic crystal light-emitting diode device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI253771B (en) | Light emitting diode structure | |
| KR102221602B1 (en) | Light emitting module, backlight unit including the module, and the display apparatus including the unit | |
| KR101683898B1 (en) | A light emitting device | |
| US11335833B2 (en) | Light-emitting diodes, light-emitting diode arrays and related devices | |
| JP5276680B2 (en) | Light emitting device package, lighting system | |
| KR101081169B1 (en) | Light emitting device and method for fabricating the same, light emitting device package, lighting system | |
| US7462868B2 (en) | Light emitting diode chip with double close-loop electrode design | |
| CN1905219A (en) | LED structure | |
| US20100078625A1 (en) | Opto-electronic device | |
| KR20150138605A (en) | Light emitting device module | |
| US20120126242A1 (en) | Light emitting device and lighting apparatus | |
| US8008685B2 (en) | Light emitting device, method of manufacturing light emitting device, light emitting device package, and lighting system | |
| US20120223347A1 (en) | Light emitting device and lighting apparatus | |
| KR101011757B1 (en) | Light emitting device, method for fabricating the light emitting device and light emitting device package | |
| US8648348B2 (en) | Light emitting device, light emitting device package, and lighting system | |
| US20100264431A1 (en) | Yellow light emitting diode and light emitting device having the same | |
| KR102474695B1 (en) | Light emitting device | |
| EP2381492B1 (en) | Light emitting device with resonant thickness of one semiconductor layer | |
| KR20120132979A (en) | Light emitting device | |
| CN101859840A (en) | Light-emitting diode (LED) structure | |
| US7888152B2 (en) | Method of forming laterally distributed LEDs | |
| KR100936058B1 (en) | Gallium nitride light emitting diode and method for manufacturing the same | |
| KR101360882B1 (en) | Nitride semiconductor device and method of manufacturing the same | |
| TWI473294B (en) | Light-emitting apparatus | |
| KR20120045541A (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU CANYANG OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: CANYANG INVESTMENT CO., LTD. Effective date: 20131024 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HONG KONG, CHINA TO: 225101 YANGZHOU, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20131024 Address after: 225101, No. 9, Zhuanghe branch, Yangzhou Economic Development Zone, Jiangsu Applicant after: JIANGSU CANYANG OPTOELECTRONICS CO., LTD. Address before: Room 2701, Jin Zhonghui center, 28 Queen's Road East, Wan Chai, Hongkong, China Applicant before: Canyang Investment Co., Ltd. |
|
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101013 |
|
| WD01 | Invention patent application deemed withdrawn after publication |