CN103557445A - Side-emission semiconductor light-emitting device, backlight module and area light source - Google Patents
Side-emission semiconductor light-emitting device, backlight module and area light source Download PDFInfo
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Abstract
The invention discloses a side-emission semiconductor light-emitting device, a backlight module and an area light source. The side-emission semiconductor light-emitting device comprises at least one semiconductor light-emitting element at least provided with a light-emitting layer which is parallel to a light guide element. Each light-emitting element further comprises a guide reflecting structure; the guide reflecting structure allows light from the light-emitting layer to emerge only from an emergent face of the light-emitting element; the emergent face forms on one side of the light-emitting element and corresponds to an incident face of the light guide element; light-emitting layers at least form in a plane between the top and bottom ends of the light guide elements; the incident faces form on one sides of the light guide elements. Preferably, each light-emitting element further comprises a waveguide structure and an antireflection and/or permeability-increasing structure. The side-emission semiconductor light-emitting device has the advantages of high optical coupling efficiency, small size, power saving and the like, has low radiating requirements, and is suitable for wide application in various backlight modules and area light sources.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device, specially refer to a kind of side transmitting light emitting semiconductor device and backlight module.
Background technology
At present when assembling surface light-emitting device, normally semiconductor light-emitting elements and light-guide device, diffuser plate etc. are formed to backlight module, by will be by semiconductor light-emitting elements, as the light input light-guide device of the transmitting such as LED, LD (as, LGP) in, through light diffusing sheet or prism plate, spread again, reach face illumination effect.Consulting shown in Fig. 1 is a kind of typical backlight module, if thousand semiconductor light-emitting elements systems in this backlight module be arranged in the corresponding region of LGP incidence surface (normally its side) in, and receive by the front of each light-emitting component or the light of back side outgoing with this incidence surface, wherein, light-emitting component and LGP coupling efficiency are comparatively low.And for the power output and the consideration that increases the aspects such as efficiency of energy utilization that increase semiconductor light-emitting elements, industry has more and more been tended to development and utilized powerful large area light emitting element, its size has surpassed lmm.Meanwhile, in order to make surface light-emitting device more frivolous, must reduce as far as possible the thickness of the assemblies such as LGP, particularly be less than lmm.Like this, if still adopt aforementioned structure design that large area light emitting device and frivolous assembling light guiding plate are formed to backlight module, the light of luminescent device transmitting will have a big chunk to scatter outside LGP, and cannot efficiently be imported LGP.
Summary of the invention
Being of taxi syllabus of the present invention provides a kind of side transmitting light emitting semiconductor device, and it is by the structure of the position of semiconductor light-emitting elements and light-guide device and semiconductor light-emitting elements is adjusted, thereby overcomes deficiency of the prior art.
Another object of the present invention is to provide a kind of backlight module.
Another object of the present invention is to provide a kind of illuminating source.
For achieving the above object, the present invention has adopted following technical scheme:
A transmitting light emitting semiconductor device, comprises at least one semiconductor light-emitting elements, and described light-emitting component at least has luminescent layer, and described luminescent layer and a light-guide device be arranged in parallel, it is characterized in that, described light-emitting component also comprises:
With so that the light that described luminescent layer produces only from the guidance quality catoptric arrangement of the exiting surface outgoing of light-emitting component, described exiting surface is distributed on a side of light-emitting component;
The setting corresponding to the incidence surface of described light-guide device of the exiting surface of described light-emitting component, and at least described luminescent layer is distributed in the plane between described light-guide device top and bottom ends face, and described incidence surface is distributed on a side of light-guide device.
As one of comparatively preferred embodiment, described guidance quality catoptric arrangement is covered in described light-emitting component surface.
As one of comparatively preferred embodiment, described semiconductor light-emitting elements also comprises the first semiconductor layer and the second semiconductor layer that is separately positioned on described luminescent layer upper and lower, and this first semiconductor layer and the second semiconductor layer are combined to form two PN heterojunction;
And, for the light producing for described luminescent layer, form the refractive index of material of described the first semiconductor layer and the second semiconductor layer lower than the refractive index that forms the material of described luminescent layer.
As one of comparatively preferred concrete application scheme, for the light producing for described luminescent layer, the refractive index that forms the material of described the first semiconductor layer and the second semiconductor layer is respectively 1.5-2.2 and 2.5-3.5 with the refractive index that forms the material of described luminescent layer.
As one of comparatively preferred embodiment, the exiting surface of described light-emitting component also has anti-reflection and/or anti-reflection structure.
Described semiconductor light-emitting elements also can comprise substrate.
Described light-guide device comprises LGP or prism plate.
, comprise LGP and aforesaid any side transmitting light emitting semiconductor device.
An illuminating source, comprises aforesaid backlight module.
Further, described illuminating source also comprises diffuser plate or the prism plate coordinating with aforementioned LGP.
Compared with prior art, advantage of the present invention is at least: by the structure to semiconductor light-emitting elements, adjust, be included in guidance quality catoptric arrangement and waveguiding structure are set in semiconductor light-emitting elements, thereby formed novel side transmitting light emitting semiconductor device, utilize this kind of side transmitting light emitting semiconductor device to coordinate with LGP, can effectively promote both coupling efficiencies, also can promote light extraction efficiency and the efficiency of energy utilization of semiconductor light-emitting elements simultaneously, volume is little, power saving, to heat radiation, require low, preferably, by anti-reflection and/or anti-reflection structure are set on the exiting surface of semiconductor light-emitting elements, also can further promote its light emission rate.The present invention is suitable for extensive use in all kinds of backlight modules, face illuminating source.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing backlight module, in figure: 01-semiconductor light-emitting elements, 011-PN knot, 012-active layer, 02-LGP.
Fig. 2 is the comparatively stereogram of semiconductor light-emitting elements in preferred embodiment of the present invention one;
Fig. 3 is the cutaway view of semiconductor light-emitting elements shown in Fig. 2;
Fig. 4 is the comparatively working state schematic representation of side transmitting light emitting semiconductor device in preferred embodiment of the present invention one;
In figure: 1-InGaN/GaN SQW, 2-p-AlGaN layer, 3-n-AlGaN layer, 4-n-GaN layer, 5-top electrode, 6-LGP.
The specific embodiment
As previously mentioned, in the devices such as existing backlight module, the elements such as semiconductor light-emitting elements and LGP normally adopt mode shown in Fig. 1 to arrange.If do not consider the low inferior problem of the intrinsic light extraction efficiency of conventional semiconductors light-emitting component, this type of arrangement for the less semiconductor light-emitting elements of size (lmm following) and the LGP (more than 3mm) with larger thickness be have necessarily adaptive.But, for the high power semi-conductor light-emitting component occurring in recent years (as, the LED chip of size more than lmm) and the more and more less LGP (thickness is generally more than lmm) of thickness, aforesaid traditional arrangement mode will inevitably cause occurring light-emitting component cannot with the problem of LGP efficient coupling, reason is, in general, if employing arrangement, the angle of scattering of semiconductor light-emitting elements is generally more than 130 °, this just makes in light that light-emitting component launches, almost major part cannot enter LGP, but insignificant dissipation.
In view of this, this case inventor, through studying for a long period of time and putting into practice, has proposed technical scheme of the present invention, illustrates as follows.
As an importance of the present invention, this case inventor has proposed the design of limit transmitting, , semiconductor light-emitting elements is parallel with light-guide device according to the luminescent layer of light-emitting component (also can be described as " active layer ") with light-guide device, and at least luminescent layer is distributed in light-guide device top, the layout of the plane between bottom face, and using a side of light-emitting component as exiting surface, and using a side of light-guide device as the incidence surface matching with aforementioned exiting surface, adopt simultaneously guidance quality catoptric arrangement is set in light-emitting component, make light that described luminescent layer produces only from the exiting surface outgoing of light-emitting component, and enter light-guide device, realize described side ballistic device.
Adopt previous designs, can make light-emitting component there is less exiting surface and (take existing LED chip as example, its light emitting layer thickness is generally in 7 μ m left and right, if there is substrate, its thickness is also only in 80-100 μ m left and right), when the incidence surface with this exiting surface and light-guide device (generally speaking, the thickness of LGP is in lmm left and right) coordinates, to make the light by light-emitting component outgoing almost all enter light-guide device, and be unlikely to insignificant loss outside LGP.
Obvious, for traditional semiconductor light-emitting elements, it also can adopt this kind of the present invention " side transmitting " scheme, and produces the effect that is far superior to existing design.
It should be noted that, in the present invention, aforesaid semiconductor light-emitting elements can be selected from LED chip, LD chip etc., but be not limited to this, those skilled in the art are according to the needs of practical application, also can expect easily and select other semiconductor light-emitting elements of commonly seeing, it can comprise the various conventional parts such as active layer, PN junction and substrate, electrode.
Aforesaid guidance quality catoptric arrangement, it can adopt the known all kinds of modes of industry to realize, and for example, can by the remaining surface except exiting surface at semiconductor light-emitting elements, be sticked, be deposited or process reflectance coating, reflecting layer of having selected micro-structural etc.And selected micro-structural described herein, it can include but not limited to cause micro-mirror structure that light arranges towards the rule of specific direction reflection etc., its form also can be selected from but be not limited to have the projection of selected form and/or depressed part etc.
In the scheme that can selectively implement at some, aforementioned guidance quality catoptric arrangement also can be formed at luminescent layer and all the other semiconductor layers that form two PN heterojunction, as the interface of first, second semiconductor layer.
As another importance of the present invention, this case inventor has also adopted waveguiding structure, to further promoting the luminous efficiency of semiconductor light-emitting elements, this waveguiding structure is preferably by following design forming, that is: for the light producing for described luminescent layer, in order to the refractive index of material that forms described the first semiconductor layer and the second semiconductor layer lower than in order to form the refractive index of the material of described luminescent layer.Utilize this design, the light can luminescent layer producing reflects in the interface of luminescent layer and first, second semiconductor layer and reenters luminescent layer, and then light is retained in luminescent layer as far as possible, reduce to be absorbed the meaningless loss causing after entering first, second semiconductor layer.
As one of comparatively preferred concrete application scheme, for the light producing for described luminescent layer, the refractive index that forms the material of described the first semiconductor layer and the second semiconductor layer is respectively 1.5-2.2 and 2.5-3.5 with the refractive index that forms the material of described luminescent layer.
As another importance of the present invention, this case inventor is also provided with anti-reflection and/or anti-reflection structure at the exiting surface of light-emitting component, this anti-reflection and/or anti-reflection structure can realize by anti-reflection film being set at exiting surface or being processed to form the modes such as anti-reflection structure, and about the material of this type of anti-reflection film or anti-reflection structure, form etc., it belongs to, and those skilled in the art can select easily in conjunction with the demand of its general knowledge and practical application, repeat no more herein.
Below in conjunction with a preferred embodiment, technical scheme of the present invention is further described.
Consult Fig. 2, if the related side transmitting light emitting semiconductor device of the present embodiment comprises thousand semiconductor light-emitting elements, wherein each light-emitting component at least has luminescent layer, and described luminescent layer and a LGP be arranged in parallel, and each light-emitting component also comprises:
With so that the light that described luminescent layer produces only from the guidance quality catoptric arrangement of the exiting surface outgoing of light-emitting component, described exiting surface is distributed on a side of light-emitting component;
Wherein, the setting corresponding to the incidence surface of this LGP of the exiting surface of each light-emitting component, and each luminescent layer is distributed in the plane between this LGP top and bottom ends face, and described incidence surface is distributed on a side of light-guide device.
Further, every semiconductor light emitting component also comprises the first semiconductor layer and the second semiconductor layer that is separately positioned on luminescent layer upper and lower, and this first semiconductor layer and the second semiconductor layer are combined to form two PN heterojunction;
And, for the light that luminescent layer produces, form the refractive index of material of described the first semiconductor layer and the second semiconductor layer lower than the refractive index that forms the material of described luminescent layer.
More specifically, consult Fig. 3, this aforesaid semiconductor light-emitting component can comprise the two PN heterojunction that mainly formed by p-AlGaN layer 2, multiple quantum well layer and n-AlGaN layer 3 and the active layer mainly being formed by InGaN/GaN SQW 1.
In addition, this luminescent device also can comprise conventional assemblies such as top electrode 5, hearth electrode, postscript, and between top, hearth electrode and aforesaid p-AlGaN layer and/or n-AlGaN layer, also can distribute n-InGaN layer 4 or p-InGaN layer, etc.
Wherein, for the light of active layer generation, the refractive index of active layer is about 3.5 left and right, and the refractive index of p-AlGaN layer, n-AlGaN layer is in 1.5-2.5 left and right.
Aforementioned guidance quality catoptric arrangement can comprise rete being covered on described light-emitting component surface etc., and it can form by micro fabrications such as existing metal evaporation, physics or chemical deposition, photoetching, corrosion.
As one of comparatively preferred embodiment, at the exiting surface of each light-emitting component, be also provided with anti-reflection and/or anti-reflection structure.
Consult Fig. 4, by previous designs, the light being produced by luminescent layer can be constrained in active layer as much as possible, then all exiting surface outgoing from light-emitting component of directive property, and then to be close to 100% efficiency incident LGP 6, realize efficient coupling between the two, promote efficiency of energy utilization, meet and make backlight module miniaturization and the lightening requirement of face illuminating source.
In general, edge-emission semiconductor luminescent device of the present invention has the advantages such as coupling efficiency is high, volume is little, power saving, and requires lowly to heat radiation, is suitable for extensive use in all kinds of backlight modules, face illuminating source.
More than explanation, and the embodiment shown on drawing, can not resolve the design philosophy surely of the present invention that is limited.In technical field of the present invention, holding the identical the knowledgeable of knowing can be by technical thought of the present invention with various form improvement change, and such improvement and change are interpreted as belonging in protection scope of the present invention.
Claims (9)
1. a side transmitting light emitting semiconductor device, comprises at least one semiconductor light-emitting elements, and described light-emitting component at least has luminescent layer, and described luminescent layer and a light-guide device be arranged in parallel, it is characterized in that, described light-emitting component also comprises:
With so that the light that described luminescent layer produces only from the guidance quality catoptric arrangement of the exiting surface outgoing of light-emitting component, described exiting surface is distributed on a side of light-emitting component;
The setting corresponding to the incidence surface of described light-guide device of the exiting surface of described light-emitting component, and at least described luminescent layer is distributed in the plane between described light-guide device top and bottom ends face, and described incidence surface is distributed on a side of light-guide device.
2. side according to claim 1 is launched light emitting semiconductor device; it is characterized in that; described semiconductor light-emitting elements also comprises the first semiconductor layer and the second semiconductor layer that is separately positioned on described luminescent layer upper and lower, and this first semiconductor layer and the second semiconductor layer are combined to form two PN heterojunction;
And, for the light producing for described luminescent layer, form the refractive index of material of described the first semiconductor layer and the second semiconductor layer lower than the refractive index that forms the material of described luminescent layer.
3. side according to claim 2 is launched light emitting semiconductor device, it is characterized in that, for the light producing for described luminescent layer, the refractive index that forms the material of described the first semiconductor layer and the second semiconductor layer is respectively 1.5-2.2 and 2.5-3.5 with the refractive index that forms the material of described luminescent layer.
4. according to the side transmitting light emitting semiconductor device described in any one in claim 1-3, it is characterized in that, the exiting surface of described light-emitting component also has anti-reflection and/or anti-reflection structure.
5. according to the side transmitting light emitting semiconductor device described in any one in claim 1-3, it is characterized in that, described semiconductor light-emitting elements also comprises substrate.
6. according to the side transmitting light emitting semiconductor device described in any one in claim 1-3, it is characterized in that, described light-guide device comprises LGP.
7. a backlight module, comprises LGP, it is characterized in that, it also comprises the transmitting of the side described in any one light emitting semiconductor device in claim 1-6.
8. a face illuminating source, is characterized in that, comprises backlight module claimed in claim 7.
9. according to claim 8 illuminating source, is characterized in that, it also comprises diffuser plate or the prism plate coordinating with described LGP.
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| CN111022967A (en) * | 2019-11-25 | 2020-04-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Regional light source dodging structure applied to fluorescence imaging system and fluorescence imaging system |
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Application publication date: 20140205 |