CN102244184A - Package structure of GaN-based blue and green light polarization light-emitting diode - Google Patents
Package structure of GaN-based blue and green light polarization light-emitting diode Download PDFInfo
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- CN102244184A CN102244184A CN2011101988946A CN201110198894A CN102244184A CN 102244184 A CN102244184 A CN 102244184A CN 2011101988946 A CN2011101988946 A CN 2011101988946A CN 201110198894 A CN201110198894 A CN 201110198894A CN 102244184 A CN102244184 A CN 102244184A
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Abstract
The invention discloses a package structure of a GaN-based blue and green light polarization light-emitting diode. The structure comprises one or a plurality of LED (light emitting diode) chips which are installed on a substrate; a polarization film is placed at the light emitting side of each chip; a depolarizer is installed between the substrate and the bottom part of each chip; after the light emitted by the LED passes through the polarization film, only the light at one polarization state of polarization states s and p transmits through the polarization film, the light at the other polarization state enters the LED chips again after being reflected, most of light reaches the bottom end of the LED, is depolarized after passing through the depolarizer, then reaches the surface polarization film again after being reflected by the substrate material at the bottom part, and is emitted out partially again; simultaneously, the reflected light reaches the depolarizer at the bottom again, and the light is reused in the same manner. By the adoption of the LED package structure, not only can the light emitting in polarization states be realized, but also the reflection light is reused, the light emitting efficiency of the LED is improved, and the dual aims of improving LED light emitting efficiency and realizing polarization light emitting are reached.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED), particularly a kind of GaN base is blue, the encapsulating structure of green glow polarized light diode.
Background technology
Light-emitting diode (LED) is a kind of when being electrically biased on direction with the luminous semi-conductor light source device of the mode of being excited.Current, along with the extensive use of semiconductor LED in fields such as illumination, demonstrations, the regulation and control that LED gone out light characteristic have huge research and using value, the polarization light extracting LED is one of them direction with broad prospect of application, and following may have great demand in opto-electronic device, novel light demonstration field.
For example, show the field at liquid crystal flat-panel, LCD has become the mainstream technology that shows industry.Typical LCD structure comprises upper polarizer, colored filter, liquid crystal layer, tft array substrate, following polarizer and module backlight from top to bottom successively.LCD inside is that the light that backlight is launched is made its " polarization " by polaroid, converts the image of being seen again to.Light source is launched liquid crystal output to the last from light, the utilization of light is successively decreased in proportion, supposes that it loses 40% in light guide plate, by polaroid loss 36% down, by liquid crystal cell loss 18% and surface reflection loss 1%, the final utilance of LED demonstration is less than 5% thus.But if LED itself is exactly a polarized luminescence, then the labyrinth of following LCD just can partly be simplified, and that is brought will be not only facility in the use, and device is simplified volume and the material that brings expended also and can save greatly.On the other hand, as noted earlier, in order to obtain polarised light, the light polarization that traditional method is to use the polarizer of external that LED is sent, there is the light more than 50% just directly to be filtered and can not get utilizing again like this, thereby makes the light utilization ratio of LED further to improve to a great extent.
Before the present invention made, Chinese invention patent (CN1547056) " Shoot type polarized luminescence pipe and polarized luminescence array thereof " had proposed a kind of Shoot type polarized luminescence pipe, was polarizer to be installed in the luminous tube front also be encapsulated in the housing with printing opacity glue.Chinese invention patent (CN101088175) " LED of polarization " adopt the light-emitting area of LED tube core or near medium is set, and make a kind of preferential transmission of light of polarization state by this medium, and settle polarization conversion layer simultaneously, comprise wave plate, be used to change the direction of vibration of polarised light of being reflected, promptly p light and s light are changed mutually.The technical scheme of foregoing invention has related to the polarized light of light-emitting diodes, but the light extraction efficiency that how to improve LED behind the realization polarized light is not simultaneously related to.
Chinese invention patent (CN101807653A) " a kind of polarized luminescence diode package structure and bright dipping method " discloses a kind of encapsulating structure of polarized luminescence diode, settles wavelength selectivity film, yellow fluorescent powder and polarizing coating on the light-emitting area of led chip successively.This structure is to design at white light LEDs, described wavelength selectivity film is used for blue light 85～100% transmissions, to gold-tinted 85～100% reflections, described yellow fluorescent powder is used for blue-light excited gold-tinted that LED is sent, be mixed into the white light outgoing, reverberation can be shaken by the particle scattered portion depolarization in the fluorescent material simultaneously.This technology is at the white light LEDs design, does not relate to indigo plant, green light LED.
Summary of the invention
The encapsulating structure that the purpose of this invention is to provide a kind of LED makes encapsulated LED itself send polarised light, and reverberation can be recycled, thereby improves the luminous efficiency of LED.
The technical solution adopted in the present invention provides the encapsulating structure of a kind of GaN base indigo plant, green glow polarized light diode, comprises one or many of basic indigo plant of the GaN that is placed on the substrate or green light LED chip, and encapsulating housing; Upper surface at the exiting surface of described led chip is provided with polarizing coating; Settle between substrate and led chip bottom and move back polarizer, overall package is in enclosure interior.
The described polarizer that moves back comprises adopting to have the birefringent material of gradient phase difference, or has the shake liquid crystal material of effect of depolarization; Described polarizing coating is wire grating structure or multilayer dielectricity membrane structure.
The purpose that adopts technique scheme is for the light extraction efficiency that improves LED simultaneously and realizes polarized light, the principle of luminosity and the process of its led chip are: indigo plant that led chip sends or green glow go out to inject polarizing coating from exiting surface, because the luminous of LED is the natural daylight that does not have polarization state substantially, for polarizing coating, the light of s and two polarization states of p has only one of them polarization state to go out by the polarizing coating transmission, the light of another polarization state then is polarized the film reflection, and enter led chip once more, most of light finally can arrive the LED bottom end, the polarizer realization depolarization of moving back of being settled by the bottom is shaken like this, and by after the reflection of LED bottom substrate material, arrive surperficial polarizing coating once more, and have the part light can outgoing once more.The light that is reflected back toward simultaneously circulation again arrives the bottom and moves back polarizer, is recycled after depolarization is shaken, so circulation.Like this, this LED encapsulating structure not only can be realized the polarization state bright dipping, and reverberation also is recycled simultaneously, can improve the light extraction efficiency of LED greatly, reaches the double goal that improves the LED light extraction efficiency and realize polarized light.
In the technique scheme, the polarizing coating of described metal nano wiregrating structure or multilayer dielectricity membrane structure makes the light outgoing of wherein a kind of polarization state of s polarization state or p polarization state, and the light of another kind of polarization state is reflected.
Described employing have the gradient phasic difference birefringent material move back polarizer, can be bilingual stone, quartz, Iceland spar etc., its principle is: after polarised light is by the birefringent material with certain gradient phasic difference, light beam is superposeed at a tiny area internal interference, thereby change its order state, outgoing polarisation of light degree is descended, realize depolarization.
Described employing have depolarization shake effect liquid crystal material move back polarizer, can be to lising liquid crystal, smectic liquid crystal and cholesteric liquid crystal.Its principle is to add a certain proportion of organic dielectric in liquid crystal material, when passing through the alternating current of certain frequency, rising along with voltage, liquid crystal can form the turbulent flow of the strong scattering process of light or stir, be called the dynamic scattering phenomenon, by this dynamic scattering, lost the characteristic of polarised light to a great extent by the light of liquid crystal.
The present invention's advantage compared with prior art is:
1, the employing of polarizing coating makes LED itself can send polarised light in the LED encapsulating structure, thereby can simplify the inclined to one side parts setting that rises in traditional LCD backlight source apparatus greatly, has both improved the utilance of light, has simplified the structure of device again.
2, install in led chip bottom and move back polarizer, be used for outgoing again after being polarized light depolarization that film reflects and shaking is made that like this reverberation is recycled, improve the light extraction efficiency of LED.
Description of drawings
Fig. 1 is that the GaN base of the embodiment of the invention one is blue, the schematic diagram of the encapsulating structure of green glow polarized light diode;
Fig. 2 is the encapsulating structure schematic diagram of embodiment two.
Wherein: 1, polarizing coating; 2, led chip; 3, electrode; 4, move back polarizer; 5, substrate.
Embodiment
Below in conjunction with drawings and Examples the present invention is further elaborated.
Embodiment one
Referring to accompanying drawing 1, it is that a kind of GaN base that provides of present embodiment is blue, the encapsulating structure of green glow polarized light diode; In the present embodiment, led chip 2 is conventional III-V group-III nitride semiconductor blue light or green glow chip, its luminous wave band is positioned at blue light or green range, and its structure is the conventional structure (comprising substrate layer, resilient coating, n type doped layer, quantum well and p type doped layer) of present led chip.The arrangement mode of electrode 3 reaches with being connected of led chip and adopts routine techniques.A kind of GaN base encapsulating structure blue, green glow polarized light diode that embodiment provides comprises: the upper surface of led chip 2 exiting surfaces is provided with polarizing coating 1, the led chip light-emitting area forms optics with the polarizing coating lower surface and contacts, and polarizing coating adopts the multilayer dielectricity membrane structure; Settle between substrate 5 and led chip bottom and move back polarizer 4, the upper surface that moves back polarizer forms optics with the led chip lower surface and contact, moves back polarizer and is employing and have the shake liquid crystal depolarizer of effect of depolarization; Liquid crystal depolarizer for as to list, smectic phase and cholesteric liquid crystal depolarizer; Led chip is conventional III-V group-III nitride semiconductor blue light or green glow chip, and its luminous wave band is positioned at blue light or green range.
The principle of liquid crystal depolarization is to add a certain proportion of organic dielectric in liquid crystal material, when passing through the alternating current of certain frequency, by electrode 3, rising along with voltage, liquid crystal can form the turbulent flow of the strong scattering process of light or stir, be called the dynamic scattering phenomenon,, lost the characteristic of polarised light to a great extent by the light of liquid crystal by this dynamic scattering.
Principle of the present invention is: the light of the exiting surface outgoing of led chip is by behind the polarizing coating, the light of s and two polarization states of p has only one of them polarization state to go out by the polarizing coating transmission, the light of another polarization state enters led chip after then being polarized the film reflection once more, in each repeatedly reflection at the interface of LED, and there is most of light to arrive the LED bottom end, through after moving back polarizer, this part light is shaken by depolarization, and by after the reflection of bottom substrate material, arrive surperficial polarizing coating once more, and have the part light can outgoing once more.The light that is reflected back toward simultaneously circulation again arrives the bottom and moves back polarizer, is recycled after depolarization is shaken, so circulation.Move back the use of polarizer like this by chip bottom, reverberation can be shaken by depolarization repeatedly and be recycling, improves the light extraction efficiency of LED, realizes the polarized light of led chip itself simultaneously.
Embodiment two
Referring to Fig. 2, it is blue for a kind of GaN base that present embodiment provides, the schematic diagram of the encapsulating structure of green glow polarized light diode; In the present embodiment, led chip 2 is conventional III-V group-III nitride semiconductor blue light or green glow chip, its luminous wave band is positioned at blue light or green range, and its structure is the conventional structure (comprising substrate layer, resilient coating, n type doped layer, quantum well and p type doped layer) of present led chip.The arrangement mode of electrode reaches with being connected of led chip and adopts routine techniques.Led chip 2 can be one, also can be many and be encapsulated in side by side in the same housing that the upper surface of its exiting surface is provided with polarizing coating 1, the led chip light-emitting area forms optics with the polarizing coating lower surface and contacts, polarizing coating adopts common metal nanometer grating structure, also can adopt multilayer dielectric film; Settle between substrate and led chip bottom and move back polarizer 4, the upper surface that moves back polarizer forms optics with the led chip lower surface and contacts, and moves back polarizer for adopting the birefringent material with gradient phase difference; The depolarizer of birefringent material can be that the calcite wedge moves back polarizer, quartzy gyrotropi crystal wedge depolarizer and diadactic structure depolarizer thereof etc.
The course of work of the concrete polarized light of above structure is: the light of LED surface outgoing is by behind the polarizing coating, the light of s and two polarization states of p has only one of them polarization state to go out by the polarizing coating transmission, the light of another polarization state enters led chip after then being polarized the film reflection once more, in each repeatedly reflection at the interface of LED, and there is most of light to arrive the LED bottom end, through after moving back polarizer, this part light is shaken by depolarization, and by after the reflection of bottom substrate material, arrive surperficial polarizing coating once more, and have the part light can outgoing once more.The light that is reflected back toward simultaneously circulation again arrives the bottom and moves back polarizer, is recycled after depolarization is shaken, so circulation.Move back the use of polarizer like this by chip bottom, reverberation can be shaken by depolarization repeatedly and be recycling, improves the light extraction efficiency of LED, realizes the polarized light of led chip itself simultaneously.
Claims (4)
1. the encapsulating structure of blue, the green glow polarized light diode of GaN base comprises one or many GaN base indigo plant or green light LED chip that is placed on the substrate, and encapsulating housing; It is characterized in that: the upper surface at the exiting surface of described led chip (2) is provided with polarizing coating (1); Settle between substrate (5) and led chip bottom and move back polarizer (4), overall package is in enclosure interior; Described polarizing coating is wire grating structure or multilayer dielectricity membrane structure, and to the s or the p light of indigo plant or green light band, wherein a kind of polarization state is that selectivity is passed through, and another kind of polarization state is total reflection.
2. a kind of GaN base according to claim 1 is blue, the encapsulating structure of green glow polarized light diode, it is characterized in that: the described polarizer that moves back comprises adopting to have the birefringent material of gradient phase difference, or has the shake liquid crystal material of effect of depolarization.
3. a kind of GaN base according to claim 2 is blue, the encapsulating structure of green glow polarized light diode, and it is characterized in that: the described polarizer birefringent material that moves back is bilingual stone, quartz or Iceland spar.
4. a kind of GaN base according to claim 2 is blue, the encapsulating structure of green glow polarized light diode, and it is characterized in that: the described polarizer liquid crystal material that moves back is to lising liquid crystal, smectic liquid crystal or cholesteric liquid crystal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101988946A CN102244184A (en) | 2011-07-15 | 2011-07-15 | Package structure of GaN-based blue and green light polarization light-emitting diode |
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| CN2011101988946A CN102244184A (en) | 2011-07-15 | 2011-07-15 | Package structure of GaN-based blue and green light polarization light-emitting diode |
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| CN102244184A true CN102244184A (en) | 2011-11-16 |
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| CN2011101988946A Pending CN102244184A (en) | 2011-07-15 | 2011-07-15 | Package structure of GaN-based blue and green light polarization light-emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993039A (en) * | 2015-05-29 | 2015-10-21 | 西安交通大学 | LED structure of efficient linearly polarized light |
| WO2020062417A1 (en) * | 2018-09-27 | 2020-04-02 | 武汉华星光电技术有限公司 | Flip chip, planar light source and display apparatus using planar light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088175A (en) * | 2004-10-29 | 2007-12-12 | 3M创新有限公司 | Polarized LED |
| CN101807653A (en) * | 2010-02-04 | 2010-08-18 | 苏州纳科显示技术有限公司 | Polarized light-emitting diode packaging structure and light-emitting method thereof |
-
2011
- 2011-07-15 CN CN2011101988946A patent/CN102244184A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088175A (en) * | 2004-10-29 | 2007-12-12 | 3M创新有限公司 | Polarized LED |
| CN101807653A (en) * | 2010-02-04 | 2010-08-18 | 苏州纳科显示技术有限公司 | Polarized light-emitting diode packaging structure and light-emitting method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 彭捍东等: "液晶退偏效应的研究", 《曲阜师范大学学报》, vol. 31, no. 2, 30 April 2005 (2005-04-30), pages 70 - 72 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993039A (en) * | 2015-05-29 | 2015-10-21 | 西安交通大学 | LED structure of efficient linearly polarized light |
| CN104993039B (en) * | 2015-05-29 | 2017-12-08 | 西安交通大学 | A kind of LED structure of efficiently linearly polarized light |
| WO2020062417A1 (en) * | 2018-09-27 | 2020-04-02 | 武汉华星光电技术有限公司 | Flip chip, planar light source and display apparatus using planar light source |
| US12021176B2 (en) | 2018-09-27 | 2024-06-25 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Flip chip, surface light source, and display device using surface light source thereof |
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Application publication date: 20111116 |