CN102243502B - Temperature control system and method for performing single event effect test under same - Google Patents
Temperature control system and method for performing single event effect test under same Download PDFInfo
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- CN102243502B CN102243502B CN 201110069305 CN201110069305A CN102243502B CN 102243502 B CN102243502 B CN 102243502B CN 201110069305 CN201110069305 CN 201110069305 CN 201110069305 A CN201110069305 A CN 201110069305A CN 102243502 B CN102243502 B CN 102243502B
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Abstract
The invention relates to a method for performing a single event effect test under the same. The temperature control system comprises a remote control computer, a temperature controller, a heating plate, an infrared probe and a high-temperature conducting wire, wherein the temperature controller is respectively connected with the infrared probe and the heating plate through the high-temperature conducting wire and is connected with the remote control computer, the remote control computer sends a temperature control instruction to the temperature controller, the temperature controller controls the heating of the heating plate according to the temperature control instruction, the infrared probe acquires the heating temperature value of the heating plate and feeds the heating temperature value back to the temperature controller, and the temperature controller modifies and regulates the heating temperature of the heating plate according to the fed-back heating temperature value so as to ensure that the heating temperature is identical to a preset temperature value. The temperature control system can be used for remote automatic calibration, has the advantages of accuracy and stability for measurement, strong anti-jamming capability, high reliability, self-protection capability and strong compatibility, and can meet the requirements of the single event effect test under different temperatures.
Description
Technical field
The present invention relates to microelectronic component anti-single particle ability test verification technique field, particularly relate to a kind of method of under temperature control system, carrying out the single particle effect test.
Background technology
Fast development along with semiconductor technology, spacecraft improves constantly with the integrated level of microelectronic component, spacecraft adopts large scale integrated circuit gradually more, because characteristic dimension and the operating voltage of device are more and more littler, correspondingly, critical charge is also more and more littler, and the effect of single particle effect is also more and more obvious.Found in the last few years that single particle effect was more remarkable, its damage mode is increasingly sophisticatedization also.
Single particle effect is that spacecraft takes place in orbit the time, but a large amount of verification experimental verification work is to carry out on ground, and especially the foundation that can assess of the microelectronic component resistance of spacecraft design is the ground simulation test result.The ground simulation experiment can not be true to nature fully, and simulated conditions should reflect the essence of objective phenomenon as much as possible.The result of simulated experiment and value depend on the equivalence of ground simulation condition and space full-scale condition, and this comprises time equivalence, energy equivalence and temperature equivalence etc.
Spacecraft can reach in very short time on accelerator at the flux that the space accumulates for a long time, and the equivalent relation between this long flux and the short time high flux is the time equivalence; The energy of the particle that the ground accelerator provides and the high energy of cosmic rays are partly much lower, it can only be the high energy part with more low-energy particle beams simulation cosmic rays, although they can have identical LET value (having particle to cause the LET threshold value of single-particle inversion), but action effect is incomplete same, and the equivalent relation between this different-energy is the energy equivalence; The temperature of space environment also is complicated and changeable, and range of temperature is bigger, and the equivalent relation between ground simulation environment temperature and the space environment temperature is the temperature equivalence.
These equivalences depend on the heightened awareness to the single particle effect physical process, depend on understanding in depth device architecture.Could set up better on this basis that ground simulation obtains the true error rate of data and space between relation.Theoretical work and verification experimental verification work all are absolutely necessary on each link.
The present domestic setting that this important function for of research is based on the single particle effect test vector of device model or particular electrical circuit more of carrying out;
(2) under radiation environment, read by the data S of irradiation chip internal
I+1, and with the described data S that reads
I+1Carry out buffer memory;
(3) with described initial graphic code S
iWith the described data S that reads
I+1Compare, comparison procedure is as follows:
A, with the initial graphic code S in i unit, same address
iNegate, and with radiation environment under read the data S of chip internal
I+1With, obtain corresponding one group of new sequence T
i, establishing j is the relativity shift address, inside of sequence, then:
(i, value j) is 1, then array T as if T
iIn the data of j position 0 to 1 upset has taken place;
(i, value j) is 0, then array T as if T
iIn the data of j position 0 to 1 upset does not take place;
B, with the initial graphic code S in i unit, same address
iWith the data S that reads chip internal under the radiation environment
I+1Non-with, obtain corresponding one group of new sequence J
i, establishing k is J
iThe relativity shift address of sequence inside, then:
(i, value k) is 1, then array J as if J
iIn the data of k position 1 to 0 upset has taken place;
(i, value k) is 0, then array J as if J
iIn the data of k position 1 to 0 upset does not take place;
C, statistics T (i, j) (i, k) sum are total single-particle inversion number of times with J;
(4) replacement test patterns is got back to step (1).
The present invention compared with prior art has following advantage:
(1) temperature control system of the present invention adopts the unitized construction of temperature controller, remote control computer, infrared probe, heating plate and high temperature wire, realize the single particle effect ground simulation test under the different temperatures first, better adapted to the needs of China's single particle experiment terminal development;
(2) temperature controller in the temperature control system of the present invention adopts the modular design of controller, driving circuit and Temperature Treatment and correction module, by major minor loop series connection control, finished the self calibration of temperature, strengthened the use dirigibility of system, integrated figure adjustment module can be proofreaied and correct in real time according to the real data that high-temperature probe collects, and can be shown to digital display end in real time, eliminate temperature float with the time float the measuring error that causes, make measure precise and stable, antijamming capability strong, the response fast, dynamic deviation is little;
The experimental study of effect and temperature relation provides reliable aid, and also the research for China's radiation hardening designing technique and radiation hardening technology provides theoretical validation approach preferably.
Description of drawings
Fig. 1 is the structure principle chart of temperature control system of the present invention;
Fig. 2 is temperature controller structure principle chart in the temperature control system of the present invention;
Embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments:
Be illustrated in figure 1 as the structure principle chart of temperature control system of the present invention, temperature control system comprises remote control computer (host computer), temperature controller, heating plate, infrared probe and high temperature wire as seen from the figure, irradiation control panel (slave computer) is installed in the vacuum irradiation target chamber in addition, and vacuum irradiation target chamber outside is provided with programmable power supply.
Temperature controller is connected with heating plate with infrared probe respectively by high temperature wire, connects the high temperature wire of temperature controller and the high temperature wire that is connected heating plate, infrared probe by being arranged on the connection of the 92 core flanges realization vacuum irradiation target chamber inner and outer system on the vacuum irradiation target chamber wall.Temperature controller is connected by the R232 serial ports with remote control computer.
The temperature of heating plate is controlled variable, built-in high temperature heater coil, and the high temperature heating plate is connected to AC power by needle probes, to realize the electrically heated function of heating chip.System can provide the heating plate of different geometrical size, to satisfy the needs of different packaged integrated circuits high temperature single particle effect tests.Heating plate is subjected to the irradiation chip back by what heat conductive silica gel was bonded in vacuum irradiation target chamber inside among the present invention, is subjected to the irradiation chip to carry out remote power feeding by the programmable power supply that is arranged on vacuum irradiation target chamber outside.The shape of heating plate by the design different size makes total system can test the circuit of different packing forms, and is compatible strong.
Infrared probe is arranged on the support of vacuum irradiation target chamber inside, the probe that the infrared probe of high precision and short and small sensitivity and probe bracket can make is in-plant near the chip back, can detect the actual temperature that is subjected to the irradiation chip body accurately, and detecting temperature is fed back to temperature controller.
The irradiation control panel comprises programmable logic device (PLD), storer, RS-232 serial port communicating protocol chip, by irradiation device etc.; Programmable logic device (PLD) is interior except the map unit module that comprises corresponding hardware, also comprise: deposit the space, to satisfy data acquisition and the comparing function to extensive integrated high-speed circuit, data contrast algorithm is closed in the front and back of adopting in the system can accurately locate the position of generation single-particle inversion and the data before and after the upset.
Power board can be realized the automatic switchover to multiple power supplies, to satisfy the independent time sharing power supply of a plurality of chips; The irradiation test plate is finished the hard compatibility to dissimilar circuit.
The concrete grammar that carries out the single-particle inversion test under temperature control system control of the present invention is as follows:
(1) i=0 reads the initial graphic code S in i address
iWith the data S that under radiation environment, reads chip internal
I+1The phase XOR is designated as T
i
(2) with S
iNegate and S
I+1With, be designated as T
i
(3) statistics T
iIn 1 position j, deposit in two-dimensional array A (i, j)
(4) with S
I+1Negate and S
iWith; The result is designated as J
i
(5) statistics J
iIn 1 position k, deposit in two-dimensional array B (i, k)
(6)i+1
(7) turn back to (1), continue to carry out, when the value of i equals chain length, carry out the comparison of reading of next round.
Annotate: the i=element address,
Offset address in the j=unit,
A (i, the j) array of record 0 to 1 upset,
B (i, the k) array of record 1 to 0 upset,
By this method can accurate in locating generation single-particle inversion the address and the information of upset type.
The above; only be the embodiment of the best of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
The content that is not described in detail in the instructions of the present invention belongs to this area professional and technical personnel's known technology.
Claims (4)
1. one kind is carried out the method that single particle effect is tested under temperature control system, and it is characterized in that: described temperature control system comprises remote control computer, temperature controller, heating plate, infrared probe and high temperature wire, and the specific implementation method is as follows:
(1) heating plate is bonded in the chip back of vacuum irradiation target chamber inside by heat conductive silica gel, chip and heating plate together are placed on the support of vacuum irradiation target chamber inside, and heating plate, infrared probe be connected by the outer temperature controller of high temperature wire and vacuum irradiation target chamber, simultaneously the programmable power supply of chip with vacuum irradiation target chamber outside is connected, remote control computer is connected with temperature controller and programmable power supply;
(2) remote control computer sends to temperature controller with temperature control instruction, temperature controller heats heating plate according to the temperature preset value in the temperature control instruction, and from the heating-up temperature value of heating plate collection the heating-up temperature of heating plate is revised adjusting according to infrared probe, make described heating-up temperature identical with temperature preset value in the remote control computer temperature control instruction, finish the heating to chip;
(3) open programmable power supply, utilize remote control computer that the chip of vacuum irradiation target chamber inside is powered;
(4) under the stationary temperature preset value, finish the single particle effect test in vacuum irradiation target chamber inside.
2. a kind of method of carrying out single particle effect test under temperature control system according to claim 1, it is characterized in that: the single particle effect test comprises single-particle inversion test, single event latch-up test and single-particle function abort in the described step (4).
3. a kind of method of under temperature control system, carrying out single particle effect test according to claim 2, it is characterized in that: the concrete decision process of described single-particle inversion test is as follows:
(1) at first with initial graphic code S
iBe written to by the irradiation chip, finish by the setting of the initial testing vector of irradiation chip;
(2) under radiation environment, read by the data S of irradiation chip internal
I+1, and with the described data S that reads
I+1Carry out buffer memory;
(3) with described initial graphic code S
iWith the described data S that reads
I+1Compare, comparison procedure is as follows:
A, with the initial graphic code S in i unit, same address
iNegate, and with radiation environment under read the data S of chip internal
I+1With, obtain corresponding one group of new sequence T
i, establishing j is the relativity shift address, inside of sequence, then:
(i, value j) is 1, then array T as if T
iIn the data of j position 0 to 1 upset has taken place;
(i, value j) is 0, then array T as if T
iIn the data of j position 0 to 1 upset does not take place;
B, with the initial graphic code S in i unit, same address
iWith the data S that reads chip internal under the radiation environment
I+1Non-with, obtain corresponding one group of new sequence J
i, establishing k is J
iThe relativity shift address of sequence inside, then:
(i, value k) is 1, then array J as if J
iIn the data of k position 1 to 0 upset has taken place;
(i, value k) is 0, then array J as if J
iIn the data of k position 1 to 0 upset does not take place;
C, statistics T (i, j) (i, k) sum are total single-particle inversion number of times with J;
(4) replacement test patterns is got back to step (1).
4. a kind of method of carrying out single particle effect test under temperature control system according to claim 1 is characterized in that: connect the high temperature wire of temperature controller and the high temperature wire that is connected heating plate, infrared probe in the described step (1) by being arranged on the connection of the 92 core flanges realization vacuum irradiation target chamber inner and outer system on the vacuum irradiation target chamber sidewall.
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|---|---|---|---|
| CN 201110069305 CN102243502B (en) | 2011-03-22 | 2011-03-22 | Temperature control system and method for performing single event effect test under same |
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|---|---|---|---|
| CN 201110069305 CN102243502B (en) | 2011-03-22 | 2011-03-22 | Temperature control system and method for performing single event effect test under same |
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| CN102243502A CN102243502A (en) | 2011-11-16 |
| CN102243502B true CN102243502B (en) | 2013-10-02 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495355B (en) * | 2011-12-31 | 2014-01-29 | 中国科学院微电子研究所 | Laser pulse single event effect simulation system |
| CN103019177A (en) * | 2012-11-16 | 2013-04-03 | 中国航天科技集团公司第五研究院第五一〇研究所 | Single event effect monitoring system of space general-purpose memory |
| CN103021469A (en) * | 2012-11-30 | 2013-04-03 | 北京时代民芯科技有限公司 | Universal single event effect detecting method of memory circuit |
| CN105093020B (en) * | 2015-08-07 | 2018-08-07 | 中国空间技术研究院 | A kind of SiP device anti-single particle effect capability appraisal procedure |
| CN107204211A (en) * | 2016-03-18 | 2017-09-26 | 国核（北京）科学技术研究院有限公司 | The Elevated temperature irradiation target chamber of temperature-controllable |
| CN106325348B (en) * | 2016-08-29 | 2017-10-03 | 中国科学院长春光学精密机械与物理研究所 | Multi-mode electrically operated control method |
| CN110531244B (en) * | 2019-08-01 | 2021-10-01 | 西北核技术研究院 | Method for testing evolution process of single-particle soft errors of digital circuit |
| CN110879623B (en) * | 2019-11-06 | 2021-04-13 | 中国空间技术研究院 | Single-particle test temperature control device with correction function and temperature control method |
| CN111915871A (en) * | 2020-08-05 | 2020-11-10 | 深圳市信锐网科技术有限公司 | Equipment control system, method and computer readable storage medium |
| CN113091920A (en) * | 2021-04-14 | 2021-07-09 | 承德石油高等专科学校 | Infrared electronic simulation target system and control method thereof |
| CN113760007B (en) * | 2021-11-05 | 2022-04-12 | 上海钜成锐讯科技有限公司 | PID temperature control method, PID temperature control system and wavelength selection switch |
| CN114987897A (en) * | 2022-05-23 | 2022-09-02 | 上海发电设备成套设计研究院有限责任公司 | Heat preservation device for nuclear power equipment irradiation aging test and application thereof |
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| US6396058B1 (en) * | 1999-06-24 | 2002-05-28 | The United States Of America As Represented By The Secretary Of The Army | Single particle caloric absorption spectrometer |
| CN101694506A (en) * | 2009-10-19 | 2010-04-14 | 中国空间技术研究院 | Device and method for controlling heating temperature of movable type single-particle testing device |
| CN101963817A (en) * | 2009-07-21 | 2011-02-02 | 神讯电脑(昆山)有限公司 | Constant-temperature heating system |
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- 2011-03-22 CN CN 201110069305 patent/CN102243502B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396058B1 (en) * | 1999-06-24 | 2002-05-28 | The United States Of America As Represented By The Secretary Of The Army | Single particle caloric absorption spectrometer |
| CN101963817A (en) * | 2009-07-21 | 2011-02-02 | 神讯电脑(昆山)有限公司 | Constant-temperature heating system |
| CN101694506A (en) * | 2009-10-19 | 2010-04-14 | 中国空间技术研究院 | Device and method for controlling heating temperature of movable type single-particle testing device |
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