CN102234837B - Closed cooling system of gas cooled polysilicon ingot furnace - Google Patents
Closed cooling system of gas cooled polysilicon ingot furnace Download PDFInfo
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Abstract
The invention relates to the manufacture technical field of polysilicon ingot furnaces, and aims to provide a closed cooling system of a gas cooled polysilicon ingot furnace. The system comprises a heat exchange platform positioned on a supporting column and used for placing a crucible, wherein a cooling gas channel is arranged in the heat exchange platform; a gas inlet and a gas outlet at two ends of the cooling gas channel are respectively connected with a cooling gas inlet pipeline and a cooling gas outlet pipeline; and the heat exchange platform, the cooling gas inlet pipeline, the cooling gas outlet pipeline, a cooling gas power pump group and a cooler form a closed circulation loop of the cooling gas. Compared with the cooling method of radiation cooling and water cooling, the system related by the invention has strong gas cooling control capacity and high industrial controllability; the gas is fed into the heat exchange platform evenly, so that the whole temperature of the heat exchange platform is even, which is in favor of even nucleation of a silicon melt at the bottom of the crucible; and the reducing speed of the temperature at the bottom of the crucible can be precisely controlled during the crystal growth.
Description
Technical field
The present invention relates to the manufacturing technology field of polycrystalline silicon ingot or purifying furnace, be specifically related to a kind of closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace, be applicable to and make the high-quality polycrystal silicon ingot of big crystal grain.
Background technology
Polycrystalline silicon ingot or purifying furnace is the main production equipments of polysilicon in the present photovoltaic industry, and its function is that polysilicon is become the polycrystal silicon ingot that certain crystal growth direction is arranged after setting the fusing of technology process, crystallographic orientation, annealing, cooling several stages.The required environment of polycrystalline silicon ingot casting process is polycrystalline ingot furnace thermal field.By power distribution, the position of lagging material, the thickness distribution of well heater in the rational design thermal field, can change the crystal growth direction of final polycrystal silicon ingot.The principle of work of this equipment is as shown in Figure 1: during work, the silicon material that at first will put into crucible carries out heat fused, open the Thermal insulation cage of bottom then, make the heat exchange platform (also claiming heat conductor) of crucible bottom can externally carry out heat loss through radiation, make the crucible bottom temperature descend, the silicon material of fusing upwards carries out directional freeze from the bottom.In the polycrystalline silicon growth process, the control of the temperature of crucible bottom is determined by heat loss through radiation.Main passing through regulated the power of well heater and the aperture of bottom Thermal insulation cage, lowers the temperature by the mode of heat exchange platform heat loss through radiation, controls the silicon ingot speed of growth.
Be the thermal field one-piece construction sectional view that Chinese invention patent " follow-up heat insulation ring thermal field structure that is used for vertical oriented growth of polysilicon " (number of patent application 201010108876.X) is disclosed among Fig. 2, used same temperature control mode.Though this technological operation is simple, since inconsistent around the Thermal insulation cage of bottom to the path of circular bottom of furnace body heat radiation, make heat exchange platform temperature high in the middle of low all around, skewness; Increase crystal vertical direction heat conduction efficiency along with the silicon ingot height reduces simultaneously, causes crystalline growth velocity progressively to slow down, and the speed of growth of its silicon ingot is difficult to accurately control by the mode of radiation cooling more; Simultaneously, restricted because of radiating rate, influence factor is many, the temperature of heat exchange platform can't accurately control and temperature distributing disproportionation even, cause silicon melt at a large amount of forming core of crucible bottom, and crystal grain quantity too much hinders it and is grown to serve as big crystal grain.Because crystal grain is many, so exists the crystal boundary that has absorbed impurity and dislocation in a large number on the silicon chip, in the silicon forbidden band, introduce deep energy level, become effective deathnium of photoproduction minority carrier, reduce the photoelectric transformation efficiency of battery.
The water-cooled technology of employing is also arranged, but because of the temperature of crucible bottom and heat exchange platform generally has more than 1000 ℃, as the water cooling mode that is adopted on the general industry, it is unpractical feeding water coolant in the heat exchange platform.Therefore, existing water-cooling pattern all is the copper pipe (as shown in Figure 3) of logical water coolant in being provided with below the heat exchange platform.Because this scheme is actually by water coolant the heat exchange platform is carried out heat exchange, by the heat exchange platform crucible bottom is carried out heat exchange again, its heat exchange mode efficient is very low.Because water temperature can not be too high, can not stop again supplying water, and have the fixed minimum power consumption in addition, the water-cooling project consumed power is big, therefore is difficult to temperature is precisely controlled, and adopts few during the historical facts or anecdotes border produces.
Chinese invention patent " gas quench system and the method that are used for the polycrystalline ingot furnace " (number of patent application 201110040032.0) has disclosed a kind of gas quench system and method (as shown in Figure 4) that is used for the polycrystalline ingot furnace, the below that is the heat exchange platform (being called as heat conductor in the document) of thermal field in ingot furnace is provided with the graphite body that inside has gas channel, and the heat of crucible bottom is passed to graphite body through heat exchange platform (heat conductor).This technology enters from the inlet mouth of gas channel by making rare gas element, and gas stream is through graphite body inside and take away heat, discharges to realize heat radiation from the air outlet of gas channel then.Compare with the radiating mode among Fig. 1,2, this technology is the gas quench system that increases an active heat removal in the thermal field bottom, and by regulating the gas flow control active heat removal amplitude in the access equipment, control crystal below rate of heat release that can be is initiatively effectively controlled crystalline growth velocity.And compare with the radiating mode among Fig. 3, because rare gas element does not have the restriction of temperature, and do not need absolute isolating seal, therefore at noncrystal growth phases such as fusings, can close cooling gas, cut down the consumption of energy, and the flow of adjustments of gas significantly in long brilliant process, the inlet gas temperature is about 25 degree, outlet can be in 11000 degree arbitrary temp unaffected, so its heat radiation amplitude is big, security is high; And the water cooling scheme of Fig. 3 in any stage, must be kept necessary discharge, and will satisfy the requirement that the cooling leaving water temperature(LWT) must not surpass 50 degree, and energy consumption is big, little, the low precision of heat radiation amplitude adjusted scope, and poor stability.
But identical with water cooling mode among Fig. 3 is that the gas cooling technology among Fig. 4 still fails to break away from the constraint of the intrinsic thoughtcast of former technology.The latter still is placed on center of gravity by the heat exchange device temperature of heat exchange platform is controlled, by the temperature variation and then indirect the realization the crucible bottom temperature controlling of heat exchange platform.Owing to have too much indirect factor between controlled target and the controlled member, cause control mode still to have problems such as non-linear, large time delay, tight coupling, as use its control effect of traditional PID still undesirable, very strong to operator's dependency, working strength is big, inefficiency.
To sum up, increasing the casting polycrystalline silicon grain-size, reduce crystal boundary density and then improve the silion cell photoelectric transformation efficiency, is the target that present international photovoltaic circle is seek assiduously.Though came out existing nearly 10 years so far from polycrystalline silicon ingot or purifying furnace, what generally adopt is the control techniques that above-mentioned mobile heat-insulation cage carries out radiation cooling all the time, its technological improvement fails to make a breakthrough always.Therefore, searching can be controlled heat dissipation capacity in the polycrystalline silicon growth process more accurately, to improve the polysilicon product quality, becomes the industry problem demanding prompt solution.
Summary of the invention
The technical problem to be solved in the present invention is, overcomes deficiency of the prior art, and a kind of closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace is provided.Be the technical solution problem, solution of the present invention is:
A kind of closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace is provided, comprise that being positioned at being used on the pillar stiffener places the heat exchange platform of crucible, described heat exchange platform inside is provided with the cold gas passage, and the gas inlet at cold gas passage two ends is connected cold gas admission passage and cold gas outlet pipe respectively with pneumatic outlet; Heat exchange platform, cold gas admission passage, cold gas outlet pipe, cold gas power-driven pump group, water cooler constitute a cold gas closed cycle loop.
As improvement, described heat exchange platform has intermediate mass and two side end caps that fit tightly; Wherein, intermediate mass possesses the cold gas passage that some levels run through, and is provided with the passage that is connected cold gas passage termination between intermediate mass and each side end cap; Described gas inlet or pneumatic outlet are located on the side end cap, and communicate with the aforementioned passage that is connected cold gas passage termination.
As improvement, described heat exchange platform has double-layer structure at least downwards, and described cold gas passage is realized in following any one mode:
(1) the equal etching in the top of the bottom of the superiors and the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage;
(2) bottom etching of the superiors is fluted, and the top of the second layer is a plane, and this double-layer structure splicing makes groove become described cold gas passage;
(3) bottom of the superiors is a plane, and the top etching of the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage.
As improvement, described cold gas passage partly is a cavity body that is used for gas buffer at the leading portion that joins with the gas inlet.
As improvement, described heat exchange platform has three-decker at least downwards, wherein:
Establish cushion chamber between (1) n layer and (n+1) layer, this cushion chamber is a cavity body, realizes by following any one mode:
The equal etching in top of the bottom of A, n layer and (n+1) layer is fluted, and this two-layer splicing merges groove becomes described cushion chamber;
The bottom etching of B, n layer is fluted, and the top of (n+1) layer is a plane, and this two-layer splicing makes groove become described cushion chamber;
The bottom of C, n layer is a plane, and the top etching of (n+1) layer is fluted, and this two-layer splicing rearward recess merges becomes described cushion chamber;
Etching has some through holes that vertically run through as the ventilation tubule on (2) the n layers, and the upper end of ventilation tubule is communicated with the cold gas passage, the lower end is communicated with cushion chamber;
(3) described ventilation tubule and cushion chamber delay the distortion as the leading portion part of cold gas passage, and are joined by cushion chamber and gas inlet;
Described n layer is any one deck except that the superiors and orlop.
As improvement, described cold gas passage possesses any one in the following structure:
(1) the cold gas passage is " S " or " returning " font fold back layout;
(2) the cold gas passage comprises the air inlet person in charge, some heat exchange tubules and the return-air person in charge; The air inlet person in charge and return-air are responsible for subtend and are arranged, link to each other by the heat exchange tubule between the two;
(3) the cold gas passage comprises some heat exchange tubules, and outlet links to each other with cold gas with the cold gas inlet respectively at the two ends of each heat exchange tubule;
(4) the cold gas passage comprises: air inlet is responsible for and coupled some air intake branches, return-air is responsible for and coupled some return-air arms, link to each other by some heat exchange tubules between the alternate layout of air intake branch, adjacent air intake branch and return-air arm with the return-air arm.
As improvement, the upper end of described ventilation tubule is communicated to the air inlet person in charge or air intake branch, and its tie point is distributed on the air inlet person in charge or the air intake branch.
As improvement, described ventilation tubule constitutes the hole array structure by described air intake branch separation.
As improvement, described cold gas passage outermost edge surrounds the size in zone and the bottom of shape and crucible adapts.
As improvement, the heat exchange platform that described heat exchange platform is a graphite material.
As improvement, described heat exchange platform is provided with the board temperature sensor, and the motor of board temperature sensor and cold gas power-driven pump group all is connected to central control system by signal wire.
As improvement, cold gas air inlet switch-valve is set in the described cold gas closed cycle loop, cold gas goes out exhaust switch valve, cold gas intake air temperature sensor, cold gas air outlet temperature transmitter, cold gas pressure transmitter and cooling draught quantity sensor, aforementioned each transmitter all is connected to central control system by signal wire.
As improvement, described heat exchange platform is a graphite heat exchange platform, and described cold gas admission passage and cold gas outlet pipe are the graphite pipeline in the part that is communicated with the place with the heat exchange platform, and water-cooling jacket is established in the outside of all the other pipelines.
As improvement, described water cooler is a water cooling heat exchanger; In the cooling water circulation loop of water cooler: be provided with discharge control valve, inflow temperature transmitter, intake pressure transmitter on the suction culvert, the CWR road is provided with return water temperature transmitter and water flow sensor, and aforementioned each transmitter all is connected to central control system by signal wire.
As improvement, there are the tonifying Qi loop of a band flowrate control valve or off-gas pump group that one is bled and vacuumizes to be connected to described cold gas closed cycle loop.
As improvement, there is a spare duct to connect cold gas closed cycle loop and furnace chamber, on this spare duct valve is set.
As improvement, fill argon gas or helium in the described cold gas closed cycle loop as cold gas.
Heat exchange platform among the present invention is to be applied in the closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace.In this closed cooling system, heat exchange platform, the cold gas admission passage that is communicated with the heat exchange platform and cold gas outlet pipe, cold gas power-driven pump group, water cooler constitute a cold gas closed cycle loop.
In the use of heat exchange platform, cooling gas (argon gas or helium) enters in the cushion chamber of gas buffer layer by pipeline to set flow, enters the intravital argon gas in this chamber by uniform distribution and form certain pressure.Argon gas in the cushion chamber is transported in the heat exchange layers by the ventilation tubule on the gas shunting layer, the cold gas passage of cooling gas in heat exchange layers discharged the heat exchange platform by pneumatic outlet after finishing heat exchanging process, and be transported to the furnace chamber outside through gas exhaust duct, have the inner-cooled graphite heat exchange system of layered structure thereby constitute.
The useful effect that the present invention has is:
With respect in the prior art by the passive cooling method of heat exchange platform heat loss through radiation, heat exchange platform of the present invention has been realized active heat removal because of the utilization of its residing gas refrigerating system.Form the closed gas circuit of controllable gas flow by utilizing heat exchange platform, gas cooler, pump group, frequency transformer etc., with flowing gas the heat exchange platform is directly cooled off, and regulate pump group motor speed by the Temperature Feedback on the heat exchange platform and come the controlled chilling gas flow, thereby realize accurate heat exchange platform temperature control.
With respect to radiation cooling and water-cooled method of cooling, strong, the industrial controllability height of gas refrigeration controllability, and, help the homogeneous nucleation of crucible bottom silicon melt because gas evenly enters the heat exchange platform and makes that heat exchange platform bulk temperature is even.
With respect to indirect type gas cooling mode, gas refrigeration technology among the present invention has been completely free of the constraint of the intrinsic thoughtcast of former technology, directly with the object of heat exchange platform as radiating control, and then realize the crucible bottom temperature controlling, farthest reduced the middle influence factor of control.Therefore, more possess stability, accuracy and validity comparatively speaking, after the sluggishness less, advantage such as easy to operate, reliable operation.
And, the cold gas passage of various ways can be adopted in heat exchange platform inside among the present invention, wherein, the layout that links to each other by some heat exchange tubules between the alternate layout of air intake branch, adjacent air intake branch and the return-air arm with the return-air arm, make the heat exchange platform possess the thin bilge construction of similar pinniform, cause best heat exchange effect and controllability.
Therefore, the application of the invention technology can accurately be controlled crucible bottom decrease of temperature speed in long brilliant process.Owing to do not need to open Thermal insulation cage, the heat exchange platform temperature of crucible bottom is even.Compare the traditional heat-dissipating method, particularly crucible and molten intravital isothermal surface levelness height in the Thermal insulation cage, and improved vertical direction thermograde.Therefore,, strengthen the crucible bottom heat exchange by cooling gas gas in the heat exchange platform, suitably reduce the crucible bottom temperature and make and grown up fast, suppress the growth of small crystal nucleus at crucible bottom advantage nucleus at the long brilliant initial stage; In long brilliant process, because bottom temp is even, the Thermal insulation cage sealing, symmetry is good, isothermal surface levelness height in the thermal field, megacryst nuclear energy enough keeps growing vertically upward; Because the gas cooling ability is strong, along with the increase of silicon ingot, continue to increase the cooling gas flow and accelerate thermal conduction, can control the whole growth speed of nucleus, and then improve the overall quality of silicon ingot.
Description of drawings
Polycrystalline silicon ingot or purifying furnace cooling control principle figure in Fig. 1 prior art;
Fig. 2 is a kind of specific embodiment of polycrystalline silicon ingot or purifying furnace cooling control in the prior art;
Fig. 3 is the another kind of specific embodiment of polycrystalline silicon ingot or purifying furnace cooling control in the prior art;
Fig. 4 is the another kind of specific embodiment of polycrystalline silicon ingot or purifying furnace cooling control in the prior art;
Polycrystalline silicon ingot or purifying furnace cooling control principle figure among Fig. 5 the present invention;
Fig. 6 has the bilayer structure heat exchange platform of hollow cooling airway passage
Fig. 7 is the three-decker heat exchange platform synoptic diagram with shunting layer;
Fig. 8 is the cold gas passage of serpentine;
Fig. 9 is the cold gas passage of " returning " font;
Figure 10 has the air inlet main line of subtend layout and the cold gas passage of return-air main line;
Figure 11 is the cold gas passage with the little tubular construction of heat exchange;
Figure 12 is heat exchange platform inlet pipe position profile figure among the embodiment
Figure 13 is for executing heat exchange platform muffler position profile figure in the example;
Figure 14 is a heat exchange layers synoptic diagram among the embodiment;
Figure 15 is the synoptic diagram (circular hole is the ventilation tubule of hole arranged in arrays) of gas shunting layer among the embodiment;
Figure 16 is the synoptic diagram of gas buffer layer among the embodiment;
Figure 17 is the schematic diagram of closed cooling system among the present invention;
Figure 18 is heater temperature and heat exchange platform temperature comparison diagram.
Reference numeral among the figure: 1 temperature control sensor, 2 furnace chambers, 3 heat-insulation cage bodies, 4 top heater, 5 crucibles, 6 sidepiece well heaters, 7 heat exchange platforms, 8 times thermal insulation layers, the 9 cold gas graphite pipeline of giving vent to anger, 10 water coolers, 11 cold gas air inlet graphite pipelines, 12 heat exchange platform temperature sensors, 13 furnace chamber pressure transmitters, 14 make-up valves, 15 cold gas air inlet switch-valves, 16 cold gas pressure transmitters, 17 cold gas air outlet temperature transmitters, 18 cold gas go out exhaust switch valve, 19 cooling draught quantity sensors, 20 cold gas intake air temperature sensor, 21 cold gas power-driven pump groups, 22 frequency transformers, 23 off-gas pump groups, 24 inflow temperature transmitters, 25 intake pressure transmitters, 26 cooling water flow meters, 27 return water temperature transmitters, 28 cooling-water flowing quantity sensors, 29 flowrate control valves, 30 copper pipes, 31 graphite blocks.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
The heat exchange platform that is used for the improvement structure of polycrystalline silicon ingot or purifying furnace is used for placing the polycrystalline silicon ingot or purifying furnace crucible and realizes heat exchange, uses graphite material usually.This heat exchange platform is provided with gas inlet and pneumatic outlet, and the inside of heat exchange platform is provided with the cold gas passage, and links to each other with pneumatic outlet with aforementioned gas inlet.
Usually, based on the reason of processing means, graphite material can't process the internal passages of change of shape under the situation of not cutting.Therefore, mode commonly used is that it is divided into laminate structure, slots according to the channel shape of design between two-layer, again with two stratiform structure amalgamations, to obtain the heat exchange platform product of shape, structural changes multiterminal.
As a kind of special case, this heat exchange platform is not that above lower leaf form realizes the processing of internal passages.This heat exchange platform has intermediate mass and two side end caps that fit tightly; Wherein, intermediate mass possesses the cold gas passage that some levels run through, and is provided with the passage that is connected cold gas passage termination between intermediate mass and each side end cap; Described gas inlet or pneumatic outlet are located on the side end cap, and communicate with the aforementioned passage that is connected cold gas passage termination.Such cold gas passage processing is the simplest, only needs punching to get final product, and cooling performance also has its limitation certainly, has the drawback of the good outlet cooling of inlet cooling difference.
Below in conjunction with accompanying drawing other embodiment of the present invention is introduced:
As the product of simplifying, the heat exchange platform can have double-layer structure (as shown in Figure 6) at least downwards, described cold gas passage is realized in following any one mode: the equal etching in top of the bottom of (1) the superiors and the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage; (2) bottom etching of the superiors is fluted, and the top of the second layer is a plane, and this double-layer structure splicing makes groove become described cold gas passage; (3) bottom of the superiors is a plane, and the top etching of the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage.These all are a kind of descriptions to cold gas passage processing mode.The cold gas passage can be deformed into the cavity body that is used for gas buffer, i.e. a cushion chamber in the leading portion part of joining with the gas inlet.
As the product that more becomes more meticulous, the heat exchange platform can have three-decker (as shown in Figure 7) downwards, and wherein: the 1st layer still is heat exchange layers, itself and between the 2nd layer the cold gas passage is set; Establish cushion chamber between the 2nd layer and the 3rd layer, this cushion chamber is a cavity body; The 2nd layer is the gas shunting layer, and etching has some through holes that vertically run through as the ventilation tubule on it, and the upper end of ventilation tubule is communicated with the cold gas passage, the lower end is communicated with cushion chamber; Herein, ventilation tubule and cushion chamber delay the distortion as the leading portion part of cold gas passage, and are joined by cushion chamber and gas inlet.
Certainly, can also be on this basis hierarchial design further, the gas shunting layer can be any one deck except that the superiors and orlop, but the cushion chamber respective design is between any two-layer below the gas shunting layer.
Among the present invention, provide the structure design of multiple cold gas passage, be exemplified below:
(1) the cold gas passage is " S " or " returning " font fold back layout (shown in Fig. 8,9);
(2) the cold gas passage comprises the air inlet person in charge, some heat exchange tubules and the return-air person in charge; The air inlet person in charge and return-air are responsible for subtend and are arranged, between the two by heat exchange tubule continuous (as shown in figure 10, its tie point is because of in following one deck structure, so can't show);
(3) the cold gas passage comprises some heat exchange tubules, and outlet links to each other with cold gas with the cold gas inlet respectively at the two ends of each heat exchange tubule;
(4) the cold gas passage comprises: air inlet is responsible for and coupled some air intake branches, return-air is responsible for and coupled some return-air arms, the alternate layout of air intake branch with the return-air arm, link to each other (as shown in figure 11 by some heat exchange tubules between adjacent air intake branch and the return-air arm, its tie point is because of in following one deck structure, so can't show).
The upper end of described ventilation tubule is communicated to the air inlet person in charge or air intake branch, and its tie point can be distributed on the air inlet person in charge or the air intake branch.Even the ventilation tubule constitutes hole array structure (as shown in figure 15) by described air intake branch separation.These measures can correspondingly improve the heat exchange effect.
Among the present invention, the size that cold gas passage outermost edge can be surrounded the zone becomes with shaped design and the bottom of crucible adapts, and can avoid energy dissipation like this.
Specific embodiments of the invention are shown in Figure 12 to 16.
Heat exchange platform among this embodiment is divided into three layers, and from top to bottom, the 1st layer is heat exchange layers, and the 2nd layer is the gas shunting layer, and orlop is the gas buffer layer.The top etching of gas buffer layer has a cushion chamber, establishes for its four jiaos to run through through hole as pneumatic outlet; The gas shunting layer plays the effect of accepting, and arranges some ventilation tubules that run through on it, and is the hole array structure by some air intake branches separations; Etching outlet passageway around the gas shunting layer bottom, and be communicated with the pneumatic outlet of gas buffer layer; The bottom etching of heat exchange layers has that air inlet is responsible for, coupled some air intake branches, and the some heat exchange tubules that are distributed in the air intake branch both sides; The heat exchange tubule is connected to the gas branch pipe that goes out that is etched in above the gas shunting layer, and go out gas branch pipe and be connected to the person in charge that gives vent to anger, and by running through the outlet passageway that through hole is connected to this layer bottom.Thus, constitute a gas communication passage, cooling gas passes through in this passage successively: gas inlet, surge chamber, ventilation tubule, the air inlet person in charge and air intake branch, heat exchange tubule, go out gas branch pipe and the person in charge that gives vent to anger, outlet passageway, pneumatic outlet.
Thus, cooling gas can be finished heat transfer process the most completely in heat exchange layers, realizes purpose of the present invention.
Concrete application method of the present invention is described below (as shown in figure 17):
In the gas refrigeration polycrystalline silicon ingot or purifying furnace among the present invention, place heat-insulation cage body 3, crucible 5 and heat exchange platform 7 in the furnace chamber 2 to place on the pillar stiffener, heat exchange platform 7 is provided with heat exchange platform temperature sensor 12, establish sidepiece well heater 6 and top heater 4 around the crucible 5, furnace chamber pressure transmitter 13 is housed on the furnace chamber 2.
Among the present invention, the mobilization dynamic of cooling gas is provided by cold gas power-driven pump group 21, and is provided with the motor speed of frequency transformer 22 controlled chilling aerodynamic force pump groups 21; Cooling draught quantity sensor 19 detects cooling gas flow, and the cooling gas flow can be regulated, and its span of control is 0～1000m
3/ h; Cold gas intake air temperature sensor 20 detects inlet air temperature, and cooling pressure transmitter 16 detects cooling system pressure, cold gas air outlet temperature transmitter 17 monitoring air outlet temperatures; The tonifying Qi loop of band flowrate control valve 29 is a cold gas closed cycle loop make-up gas, and off-gas pump group 23 is bled for cold gas closed cycle loop and vacuumized; Make-up valve 14 can connect furnace chamber 2 and loop, and water cooler 10 is realized heat exchange by water coolant and cooling gas, and cooling water flow is adjustable; The cooling water inlet pipe road is provided with cooling water flow meter 26, inflow temperature transmitter 24, intake pressure transmitter 25, and the CWR road is provided with return water temperature transmitter 27 and cooling-water flowing quantity sensor 28; The sensor all is passed to central control system by signal wire with signal, is required according to technology controlling and process by central control system.
The invention will be further described below in conjunction with the production of polysilicon flow process:
Polycrystalline silicon ingot or purifying furnace is a kind of silicon remelting device, to reach polysilicon that certain purity requires packs in the stove, enter by processing requirement vacuumize, heating, melting process, in these three operation processes, cold gas air inlet switch-valve 15 and cold gas go out exhaust switch valve 18 and are in closing condition, and cold gas closed cycle loop (closed cooling system) does not enter the internal recycle state;
Enter the long brilliant stage, provide signal, determine the pressure in the closed cooling system according to cold gas pressure transmitter 16, with this pressure and furnace chamber pressure ratio, the state in the decision tonifying Qi loop and the loop of bleeding.When pressure in the closed cooling system is consistent with furnace chamber pressure, cold gas air inlet switch-valve 15 and cold gas go out exhaust switch valve 18 and are in open mode, the motor of frequency transformer 22 controlled chilling aerodynamic force pump groups 21, and according to the predefined heat exchange platform of processing condition temperature to controlling.By this closed cooling system, can accurately control the crucible bottom temperature at the long brilliant initial stage, and then can guarantee the length crystal nucleation quality at brilliant initial stage, thereby the crystallization and freezing of silicon is controlled effectively, and then increase crystal grain, improve the crystal orientation, accelerate long brilliant efficient, cut down the consumption of energy, improve the silicon ingot quality.
Behind long brilliant the end, enter annealing and process for cooling.Control graphite heat exchange platform is to certain temperature, and the technology operation finishes, and goes out furnace operating, and a complete production cycle finishes.
Figure 18 is long brilliant stage heater temperature and heat exchange platform temperature comparison diagram, and as can be seen from the figure, this closed cooling system has been carried out effectively and accurate control temperature, thereby has verified the feasibility of this method;
By above contrast, the characteristics that can sum up the closed cooling system of the refrigeration polycrystalline silicon ingot or purifying furnace of giving vent to anger have:
(1) cooling gas flow, temperature can be controlled, thereby accurately control the crucible bottom temperature;
(2) the long brilliant initial stage is accurately controlled the crucible bottom temperature, guarantee bottom temp unity in the horizontal direction, and then can guarantee the length crystal nucleation quality at brilliant initial stage, thereby the crystallization and freezing of silicon is controlled effectively, and then increase crystal grain, improve the crystal orientation, accelerate long brilliant efficient, cut down the consumption of energy, improve the silicon ingot quality.
The concrete enforcement of more than enumerating is the explanation that the present invention is carried out; it is to be noted; implement more than only to be used for that the present invention is described further; do not represent protection scope of the present invention; nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Claims (2)
1. the closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace, comprise that being positioned at being used on the pillar stiffener places the graphite heat exchange platform of crucible, it is characterized in that, described heat exchange platform inside is provided with the cold gas passage, cold gas passage outermost edge surrounds the size in zone and the bottom of shape and crucible adapts, and the gas inlet at its two ends is connected cold gas admission passage and cold gas outlet pipe respectively with pneumatic outlet; Heat exchange platform, cold gas admission passage, cold gas outlet pipe, cold gas power-driven pump group, water cooler constitute a cold gas closed cycle loop; Fill argon gas or helium in the described cold gas closed cycle loop as cold gas; There are the tonifying Qi loop of a band flowrate control valve or off-gas pump group that one vacuumizes to be connected to described cold gas closed cycle loop; Cold gas admission passage and cold gas outlet pipe are the graphite pipeline in the part that is communicated with the place with the heat exchange platform, and water-cooling jacket is established in the outside of all the other pipelines; There is a spare duct to connect cold gas closed cycle loop and furnace chamber, on this spare duct valve is set; Described heat exchange platform is provided with the board temperature sensor, and the motor of board temperature sensor and cold gas power-driven pump group all is connected to central control system by signal wire; Cold gas air inlet switch-valve is set in the described cold gas closed cycle loop, cold gas goes out exhaust switch valve, cold gas intake air temperature sensor, cold gas air outlet temperature transmitter, cold gas pressure transmitter and cooling draught quantity sensor, aforementioned each transmitter all is connected to central control system by signal wire; Described water cooler is a water cooling heat exchanger, in the cooling water circulation loop of water cooler: be provided with discharge control valve, inflow temperature transmitter, intake pressure transmitter on the suction culvert, the CWR road is provided with return water temperature transmitter and water flow sensor, and aforementioned each transmitter all is connected to central control system by signal wire;
Described heat exchange platform has intermediate mass and two side end caps that fit tightly; Wherein, intermediate mass possesses the cold gas passage that some levels run through, and is provided with the passage that is connected cold gas passage termination between intermediate mass and each side end cap; Described gas inlet or pneumatic outlet are located on the side end cap, and communicate with the aforementioned passage that is connected cold gas passage termination;
Described cold gas passage possesses any one in the following structure:
(1) the cold gas passage is " S " or " returning " font fold back layout;
(2) the cold gas passage comprises the air inlet person in charge, some heat exchange tubules and the return-air person in charge; The air inlet person in charge and return-air are responsible for subtend and are arranged, link to each other by the heat exchange tubule between the two;
(3) the cold gas passage comprises some heat exchange tubules, and outlet links to each other with cold gas with the cold gas inlet respectively at the two ends of each heat exchange tubule;
(4) the cold gas passage comprises: air inlet is responsible for and coupled some air intake branches, return-air is responsible for and coupled some return-air arms, link to each other by some heat exchange tubules between the alternate layout of air intake branch, adjacent air intake branch and return-air arm with the return-air arm;
The structure of described heat exchange platform is any one among following two kinds:
A: the heat exchange platform has double-layer structure at least downwards; The cold gas passage partly is a cavity body that is used for gas buffer at the leading portion that joins with the gas inlet, and the cold gas passage is realized in following any one mode:
(1) the equal etching in the top of the bottom of the superiors and the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage;
(2) bottom etching of the superiors is fluted, and the top of the second layer is a plane, and this double-layer structure splicing makes groove become described cold gas passage;
(3) bottom of the superiors is a plane, and the top etching of the second layer is fluted, and this double-layer structure splicing merges groove becomes described cold gas passage; Perhaps,
B: the heat exchange platform has three-decker at least downwards, wherein:
Establish cushion chamber between (1) n layer and (n+1) layer, this cushion chamber is a cavity body, realizes by following any one mode:
The equal etching in top of the bottom of a, n layer and (n+1) layer is fluted, and this two-layer splicing merges groove becomes described cushion chamber;
The bottom etching of b, n layer is fluted, and the top of (n+1) layer is a plane, and this two-layer splicing makes groove become described cushion chamber;
The bottom of c, n layer is a plane, and the top etching of (n+1) layer is fluted, and this two-layer splicing rearward recess merges becomes described cushion chamber;
Etching has some through holes that vertically run through as the ventilation tubule on (2) the n layers, and the upper end of ventilation tubule is communicated with the cold gas passage, the lower end is communicated with cushion chamber;
(3) described ventilation tubule and cushion chamber be as the distortion of the leading portion of cold gas passage part, and joined by cushion chamber and gas inlet;
Described n layer is any one deck except that the superiors and orlop.
2. the closed cooling system of gas refrigeration polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that, described ventilation tubule constitutes the hole array structure by described air intake branch separation, and its upper end is communicated to the air inlet person in charge or air intake branch, and its tie point is distributed on the air inlet person in charge or the air intake branch.
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| CN 201110218517 CN102234837B (en) | 2011-08-01 | 2011-08-01 | Closed cooling system of gas cooled polysilicon ingot furnace |
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| CN 201110218517 CN102234837B (en) | 2011-08-01 | 2011-08-01 | Closed cooling system of gas cooled polysilicon ingot furnace |
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