KR100947836B1 - Apparatus for manufacturing silicon ingot - Google Patents

Abstract

PURPOSE: An apparatus for manufacturing a silicon ingot is provided to make the silicon ingot with high cultivation by controlling a temperature of a heating unit. CONSTITUTION: A crucible(120) is installed inside a chamber(110). A heating unit(130) heats the crucible. The crucible is loaded on a crucible mounting unit(140). A water cooling load group(151-153) is formed under the crucible mounting unit. The water cooling load group is separately installed from the center of the crucible mounting unit to the outside and is connected to water supply units.

Description

Silicon ingot manufacturing apparatus {Apparatus for manufacturing silicon ingot}

The present invention relates to a silicon ingot manufacturing apparatus, and more particularly, to a silicon ingot manufacturing apparatus having a <100> direction coagulation structure with good cultureability through the control of the individual water cooling rod to coagulate the silicon ingot solidification.

Recently, with the problem of global warming, the development of new and renewable energy is being actively conducted. Among them, the solar industry has grown at an annual average of more than 40% over the last five years due to the advantages of pollution-free, energy conservation, maintenance and high reliability.

Currently, polysilicon, which is a basic raw material for solar cells, cannot be supplied smoothly, showing a reverse pyramid type value chain. This is causing a rise in the price of polysilicon, a raw material, because supply is not smooth according to the demand of the solar module system using the solar cell.

As a result, efforts to secure smooth supply and demand of silicon raw materials have emerged as an issue in related industries. In order to secure smooth supply and demand of silicon raw materials, the presently used method is to purify a large amount of waste silicon generated in a semiconductor silicon wafer manufacturing process and grow it into a silicon ingot.

Important factors in the silicon ingot manufacturing process include melting temperature of silicon during melting, melting time, gas atmosphere, and reduced pressure.In the case of solidification, solidification rate (V) = cooling rate (R) / temperature gradient (G). One-way coagulation can be controlled. Typically, unidirectional solidification of polycrystalline silicon is a process of making a silicon ingot having a crystal orientation of <100> with good orientation after initial nucleation using a water-cooled rod.

Recently studied, an important parameter in solidification in the silicon ingot manufacturing process is to control the cooling temperature of the solidification interface of the silicon ingot. The unstable cooling temperature of the silicon ingot may cause the silicon ingot to gather inwardly, deviate to one side, grow unevenly in crystal size, and cause cracks in the silicon ingot.

On the other hand, among the existing silicon ingot manufacturing method there is a method (SRS method) to solidify the silicon ingot by the temperature difference to move the crucible down. This method has a problem that a defect is issued to a silicon ingot formed in the crucible according to the vibration of the shaft elevator. Thus, a method of growing a silicon ingot using a water-cooled rod has been proposed.

As a technique proposed to grow a silicon ingot using a water-cooled rod, Japanese Patent Application Laid-Open No. 11-310496 (name of the invention: a method and apparatus for producing silicon having a unidirectional solidification structure having good orientation, hereinafter referred to as “quoting invention” 1 ”).

In the cited invention 1, the heater part of the crystal growth furnace exists only in the upper part and the lower part, and during the solidification, the crucible is moved downward by the shaft elevator and the solidification method is used. In addition, argon (Ar) gas, which is an inert gas, is introduced into the water cooling rod as a refrigerant gas, and a refrigerant supply unit, a discharge port, and a preheating heater unit of an inert gas are used to move the refrigerant gas into the chamber. In this case, a method for manufacturing a silicon ingot and a device for supplying argon (Ar) gas used as a refrigerant from the water-cooling rod to the inside of the chamber to create an argon (Ar) gas atmosphere to reduce impurities in SiO and SiC are described. have.

However, in Cited Invention 1, argon (Ar) gas, which is used as a refrigerant gas as a water-cooled rod, must be continuously supplied during the operation of the crystal growth furnace. That is, since argon (Ar) gas is used as the cooling medium for 30 hours or more, there is a problem in that the manufacturing cost of silicon ingot becomes large.

The present invention has been proposed in the background as described above, and an object of the present invention is to produce a silicon ingot having a <100> direction coagulation structure with good cultureability by controlling the amount of cooling water when solidifying the molten silicon inside the crucible It is to provide a silicon ingot manufacturing apparatus.

It is an additional object of the present invention to provide a silicon ingot manufacturing apparatus capable of manufacturing a silicon ingot having a <100> direction coagulation structure with good cultureability through temperature control of a heating part for heating a crucible.

In order to achieve the above object, a silicon ingot manufacturing apparatus according to an aspect of the present invention includes a chamber, a crucible installed in the chamber, a heat generating part for generating a crucible, a crucible mounting part on which a crucible is mounted, and a crucible mounting part It includes at least two or more water-cooled rod group formed in, at least two or more water-cooled rod group is installed to be spaced apart from each other from the center of the crucible mounting portion and characterized in that different water supply pipe is connected.

Silicon ingot manufacturing apparatus according to an additional aspect of the present invention, the upper heating portion is installed on the top of the crucible, the first side heating portion installed on the upper side of the crucible side, the second side heat generation is installed in the middle portion of the crucible side And a third side heating part installed below the crucible side.

According to another aspect of the present invention, a silicon ingot manufacturing apparatus includes a first crucible mounting portion in which a crucible mounting portion supports a crucible, a second crucible mounting portion in which an insertion groove into which a water cooling rod is inserted is formed, and a second crucible mounting portion and a first crucible mounting portion. 1 includes a cooling plate installed between the crucible mounting portion.

Silicon ingot manufacturing apparatus according to another additional aspect of the present invention, the upper heat insulating plate to insulate the heat generated in the heat generating portion, the lower heat insulating plate provided between the crucible mounting portion and the water-cooled rod group, formed between the lower heat insulating plate and the upper heat insulating plate And a water-cooled rod heat insulating part for sealing and insulating the water-cooled rod group together with the side heat insulating material and the lower heat insulating plate.

According to another aspect of the present invention, a silicon ingot manufacturing apparatus includes a water cooling rod included in a water cooling rod group, the first and second cooling water inlets through which coolant is introduced from a water supply pipe, and the first and second cooling water inlets. And a cooling water discharge port configured to discharge the cooling water passing through the first and second cooling water path parts through which the cooling water flows, and to the outside. The first and second cooling water path parts may be formed at left and right sides of the cooling water discharge port, and may be implemented as one of a meander pattern and a loop antenna pattern.

Silicon ingot manufacturing apparatus according to another additional aspect of the present invention, the cooling water supply unit for supplying the cooling water to the water cooling rod group through the water supply pipe, the valve for opening and closing the water supply pipe, and the first heat sensing unit for detecting the heating temperature of the heat generating unit And a second heat sensing unit sensing a heating temperature of the crucible mounting unit and a valve controller controlling the opening and closing operation of the valve according to the heating temperature sensed by the first and second heat sensing units.

In the silicon ingot manufacturing apparatus according to the present invention having the configuration described above, at least two or more water-cooled rod groups are formed under the crucible mounting portion, so that the molten silicon ingot solidifies inside the crucible and is supplied to each of the water-cooled rod groups without moving the crucible. Through controlling the amount of cooling water, there is a useful effect of producing a silicon ingot having a <100> direction coagulation structure with good culture.

In addition, the silicon ingot manufacturing apparatus according to the present invention is implemented so that a plurality of heating parts installed on each side of the crucible upper and side, is formed, the <100> direction coagulation structure with good cultureability through temperature control of the heating part to heat the crucible There is a useful effect that can produce a silicon ingot with.

In addition, the silicon ingot manufacturing apparatus according to the present invention, the upper heat insulating plate, the lower heat insulating plate installed between the crucible mounting portion and the water-cooled rod group, the side heat insulating material formed between the lower heat insulating plate and the upper heat insulating plate, and the lower heat insulating plate group Implemented by including a water-cooled rod heat insulating to seal and insulate the heat, it can protect the water-cooled rod group when melting the silicon by applying heat to the crucible. In addition, even if the lower heat insulating plate is opened to solidify the molten silicon, the water cooling rod heat insulating part prevents the heat inside the chamber from being discharged to the outside, thereby controlling the amount of cooling water supplied to each of the water cooling rod groups. There is a useful effect of making silicone ingots with a solidified texture.

In addition, the silicon ingot manufacturing apparatus according to the present invention, the first and second cooling water inlet flows flowing from the first and second cooling water inlet is formed on the left and right with respect to the cooling water outlet, the meander pattern (meander) or By implementing one of the loop antenna patterns, there is a useful effect of minimizing the temperature deviation in the water-cooled rod when solidifying the molten silicon in the crucible.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily understand and reproduce the present invention.

1 is a schematic configuration diagram for explaining a silicon ingot manufacturing apparatus according to an embodiment of the present invention, Figures 2a, 2b is an embodiment showing a cross-sectional view of the water cooling rod of the silicon ingot manufacturing apparatus according to the present invention, Figure 3 Is an embodiment for explaining a structure for connecting a plurality of water cooling rods 130 in the silicon ingot manufacturing apparatus according to the present invention.

Referring first to Figure 1, as shown, the silicon ingot manufacturing apparatus according to the present embodiment is largely the chamber 110, the crucible 120, the heat generating unit 130, the crucible mounting portion 140 and It may be implemented, including the water-cooled rod group (151, 152, 153).

The chamber 110 is usually formed in a double structure having an internal space, and when the heating unit 130 is operated to heat the crucible 120, the double structure is used to cool the heat applied to the surface of the chamber 110. Cooling water is circulated in the inner space.

Crucible 120 is to receive the silicon raw material to be grown into a silicon ingot, the crucible 120 should be implemented with a material that can withstand the melting temperature of the melt. For example, in the present invention, the crucible 120 is preferably implemented by quartz.

The heat generating unit 130 heats the crucible 120 and is disposed in the chamber 110. For example, the heating unit 130 may be implemented as an electrode and a heating element made of graphite (graphite). According to a characteristic aspect of the present invention, the heating unit 130 may include an upper heating unit 131 installed on the top of the crucible 120, a first side heating unit 132 installed on an upper side of the crucible 120, and The second side heating part 133 is installed in the middle of the crucible 120 side, and the third side heating part 134 is installed at the bottom of the crucible 120 side. Thus, the silicon ingot manufacturing apparatus according to the present invention may form a silicon ingot by solidifying the molten silicon through temperature control.

The crucible mounting portion 140 is a crucible 120 is mounted, it is implemented in graphite (graphite), the surface is used that is coated with SiC. For example, the crucible mounting portion 140 includes a first crucible mounting portion 141 supporting the crucible 120, a second crucible mounting portion 142 having an insertion groove into which a water cooling rod is inserted, and a second crucible mounting portion 142. ) And the first crucible mounting portion 141 may be implemented to include a cooling plate 143. Here, the cooling plate 143 may be implemented with copper and tungsten alloy or copper and molybdenum alloy.

The individual water-cooled rods of the water-cooled rod groups 151, 152, and 153 are formed under the crucible mounting portion 140, and the material is made of copper (Cu), and the surface is coated with tungsten or hard chromium plating. The water-cooled rod is used to start the initial solidification of the melt by rapidly lowering the temperature of the bottom portion of the crucible 120 below the melting point of silicon.

Hereinafter, the structures of the water-cooled rod groups 151, 152, and 153 will be described in detail with reference to FIGS. 2A, 2B, and 3.

First, FIG. 2A illustrates the water cooling rod according to the first embodiment. As shown in FIG. First and second cooling water path parts 252a and 252b through which the cooling water inlets 251a and 251b, the cooling water flowing from the first and second cooling water inlets 251a and 251b flow, and the first and second cooling water path parts It is implemented to include a coolant outlet 253 for discharging the coolant passing through the (252a, 252b) to the outside, for example, the cooling water supply (reference numeral 413 in FIG. 1).

As shown in FIG. 2A, the shape of the water cooling rod has a '기둥' shape, and the pillars 257 and the first and second cooling water inlets 251a and 251b are formed on both sides of the cooling water outlet 253. The first and second cooling water path parts 252a and 252b are formed at the left and right sides of the cooling water discharge port 253 and are implemented as an upper body 258 having a meander pattern. As shown in FIG. 2A, the first and second cooling water path parts 252a and 252b have a long cooling water flow path, so that the temperature deviation in the water cooling rod can be minimized, and the crucible mounting part (see FIG. 1). Number 140) can increase the thermal efficiency of the cooling water.

FIG. 2B illustrates a water cooling rod according to the second embodiment. As illustrated, the individual water cooling rods of the water cooling rod groups 151, 152, and 153 may include first and second cooling water inlets through which cooling water is introduced from a water supply pipe. First and second cooling water path portions 262a and 262b through which 261a and 261b, cooling water flowing from the first and second cooling water inlets 261a and 261b flow, and the first and second cooling water path portions 262a. And a coolant outlet 263 for discharging the coolant that has passed through 262b to the outside, for example, to the coolant supply unit (413 of FIG. 1).

As shown in FIG. 2B, the shape of the water cooling rod has a '┳' shape, and first and second cooling water inlets 261a and 261b are formed at both sides of the cooling water discharge port 263, and the first and second cooling rods are formed. The coolant path parts 262a and 262b are implemented to have the same pattern on both sides of the coolant outlet 263. The first and second coolant inlets 261a and 261b and the coolant outlet 263 are formed in the ｚ direction, and the first and second coolant path parts 262a and 262b are formed in a loop antenna pattern on the x-y plane. As shown in FIG. 2B, the first and second cooling water path parts 262a and 262b have a long cooling water flow path, so that the temperature deviation in the water cooling rod can be minimized, and the crucible mounting part (see FIG. 1). Number 140) can increase the thermal efficiency of the cooling water.

As shown in FIG. 3, each of the water cooling rod groups 151, 152, and 153 is provided to be spaced apart from the center of the crucible mounting portion 40 to the outside. The water cooling rod group 151 receives the cooling water from the water supply pipe (reference numeral 211 of FIG. 1), and the water cooling rod group 152 receives the cooling water from the water supply tube (reference numeral 212 of FIG. 1), and the water cooling rod group ( 153 receives cooling water from a water supply pipe (reference numeral 213 of FIG. 1). Each of the water cooling rod groups 151, 152, and 153 may be supplied with cooling water having the same temperature, or may be supplied with cooling water having different temperatures. In addition, the water cooling rod groups 151, 152, and 153 may be supplied with different amounts of cooling water. Although each of the water-cooled rod groups 151, 152, and 153 is illustrated in FIG. 3 as being rectangular, the water-cooling rod groups 151, 152, and 153 may be implemented to have a circular shape from the center of the crucible mounting portion 40 to the outside.

Hereinafter, it will be described with reference to FIG. 1 again. As shown in FIG. 1, according to an additional aspect of the present invention, the silicon ingot manufacturing apparatus of the present invention supplies cooling water to the water cooling rod groups 151, 152, and 153 through water supply pipes 211, 212, and 213. Valves 171, 172, and 173 for opening and closing the cooling water supply units 411, 412, and 413, the water supply pipes 211, 212, and 213, and a first heat sensing unit 181a for sensing the heating temperature of the heat generator 130. , 181b, the second heat sensing unit 182 for sensing the heating temperature of the crucible mounting unit 140, and the valves 171, according to the heating temperature detected by the first and second heat sensing units 181a, 181b, and 182. It may further include a valve controller 414 for controlling the opening and closing operations of the 172, 173. Here, reference numeral 214 denotes a water supply pipe that provides the cooling water from the cooling water supply unit 413 to the inner space of the chamber 110.

The valves 171, 172, 173 may be implemented with, for example, a solenoid valve. Each cooling water supply unit 411, 412, 413 may have the same cooling water storage capacity or may be implemented differently. Here, the coolant supply unit 411, 412, 413 is connected to each of the plurality of water supply pipes (211, 212, 213), a plurality of coolant storage unit having a different cooling water storage capacity, and water introduced into the cooling water storage unit as an example. It includes a cooling device for cooling by using a refrigerant gas.

According to this aspect, the silicon ingot manufacturing apparatus according to the present invention solidifies the molten silicon by individually controlling the temperature and the amount of cooling water supplied to the water cooling rod groups 151, 152 and 153 by the valve controller 414. By controlling the cooling water temperature and the cooling water amount, a silicon ingot having a solidification structure in the <100> direction having good cultureability can be manufactured.

The apparatus for manufacturing a silicon ingot according to the present invention supports a crucible mounting part moving part (not shown) for moving the crucible mounting part 140 up and down, and supports the crucible mounting part 140 to a predetermined height from the chamber bottom surface 111. The apparatus may further include a crucible mounting part supporter 341 which opens and closes the chamber bottom surface 111 according to an operation of the mounting part moving part. Here, the crucible mounting unit moving unit is a device that can move the crucible mounting unit 140 up and down, for example, may be implemented as a control device for controlling the operation of the motor and the motor.

The silicon ingot manufacturing apparatus according to the present invention includes an upper heat insulating plate 191 for insulating heat generated from the heat generating part 130, and a lower heat insulating plate installed between the crucible mounting part 140 and the water cooling rod group 151, 152, and 153. 192, the side insulation 193 formed between the lower insulation plate 192 and the upper insulation plate 191, and the water cooling rod group 151, 152, and 153 together with the lower insulation plate 192. When the water cooling rod heat insulating part 194, the lower heat insulating plate moving part 192a for moving the lower heat insulating plate 192 in parallel with the crucible mounting part 140, and the water cooling rod groups 151, 152, and 153 are moved up and down. It may be implemented further comprising a water-cooled rod moving part (not shown). In FIG. 1, reference numeral 331 denotes a heat insulation board support, which supports the lower insulation board 192 and the side insulation board 193. Reference numeral 351 denotes a water cooling rod support, which supports the water cooling rod groups 151, 152, and 153.

Here, the lower insulation plate moving part 192a is a device for moving the lower insulation plate 192 when discharging the crucible 120 to the outside or moving the water cooling rod group 151, 152, 153 to the crucible mounting part 140. For example, it may be implemented as a control device for controlling the operation of the motor and the motor. The water-cooled rod moving unit is a device capable of moving the water-cooled rod groups 151, 152, and 153 up and down when solidifying the silicon melt stored in the crucible 120 in one direction. Can be implemented.

The silicon ingot manufacturing apparatus according to the present invention checks the melting state of the melt inside the upper heat insulating plate moving part 191a and the crucible 120 to move the upper heat insulating plate 191 in a direction parallel to the crucible mounting part 140. It may be implemented by further comprising a viewing window (196) for allowing a, and a temperature measuring device (197) for measuring the surface temperature of the melt inside the crucible (120) through the viewing window (196).

The upper insulation plate moving unit 191a is a device capable of moving the upper insulation plate 191 when checking the temperature of the silicon melt inside the crucible 120. For example, the upper insulation plate moving unit 191a may be implemented as a controller for controlling the operation of the motor and the motor. have. For example, the temperature measuring device 197 may be implemented as a pyrometer for measuring the surface temperature of the melt inside the crucible 120. A pyrometer is a device that measures the temperature of an object's surface based on the surface brightness of the melt from which the irradiated laser is reflected by the object.

The silicon ingot manufacturing apparatus according to the present invention may further include a vacuum pump 198 for maintaining the inside of the chamber 110 in a vacuum state. The vacuum pump 198 is a device for maintaining a constant degree of vacuum in the chamber 110, and may be implemented as, for example, a rotary pump and a booster pump.

The silicon ingot manufacturing apparatus according to the present invention may further include a silicon and gas inlet 199a and a gas outlet 199b. The silicon and gas inlet 199a is used to inject a purge gas to remove impurities contained in silicon and silicon into the crucible 120. The purification gas serves as a carrier for introducing silicon into the silicon and gas inlet 130. The gas outlet 199b discharges the gas generated by the reaction between the purified gas introduced into the crucible 120 and silicon to the outside.

4A and 4B illustrate an example for describing a process of growing a silicon ingot of the silicon ingot manufacturing apparatus of FIG. 1.

First, it will be described with reference to FIG. 4A. When the crucible 120 is prepared in the chamber 110, silicon and purified gas are introduced into the crucible 120 through the silicon and gas inlet 199a.

Thereafter, the heat generating unit 130 is driven so that the heat generating temperature is a silicon melting temperature, for example, 1420 ° C. or more. After driving the heat generating unit 130 for a predetermined time, the lower insulating plate moving unit 192a is driven to solidify the silicon melt in the crucible 120 to move the lower insulating plate 192. Thereafter, the water cooling rod groups 151, 152, and 153 are moved to the crucible mounting unit 140. At this time, even if the lower heat insulating plate 192 is opened, the water-cooled rod heat insulating part 194 prevents the heat inside the chamber 110 from being released to the outside.

When the water cooling rod groups 151, 152, and 153 are positioned in the crucible mounting unit 140, the valve controller 414 passes through the water supply pipes 211, 212, and 213 to the water cooling rod groups 151, 152, and 153. To supply. The valve controller 414 may include the first heat detection units 181a and 181b for detecting the heat generation temperature of the heat generating unit 130, the second heat detection unit 182 for detecting the heat generation temperature of the crucible mounting unit 140, and The first and second heat sensing units 181a, 181b, and 182 control the opening and closing operations of the valves 171, 172, and 173 according to the heating temperature sensed to control the amount of cooling water.

Hereinafter, a description will be given with reference to FIG. 4B. As described in FIG. 4A, when the silicon melt of the crucible 120 is solidified to form a silicon ingot, the crucible mounting unit moving part is driven to move the crucible mounting support 341 downward. Although not shown in the drawing, the crucible mounting unit moving part may be implemented as, for example, a motor and a control device for controlling the operation of the motor.

When the crucible mounting support 341 is moved downward, the crucible mounting portion 140, the water cooling rod group 151, 152, and 153, the water cooling rod heat insulating portion 194, and the bottom surface 111 of the chamber are also moved downward. do. The crucible 120 in which the silicon melt is completely solidified is transferred to another place, and a new crucible 120 is placed on the crucible mounting portion 140. Thereafter, when the new crucible 120 is moved into the chamber 110, the silicon and purifying gas are re-injected into the crucible 120, thereby again generating a silicon melt.

Thus far, the present specification has been described with reference to the embodiments shown in the drawings so that those skilled in the art to which the present invention pertains can easily understand and reproduce the present invention. Those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments of the present invention. Therefore, the true technical protection scope of the present invention should be defined only by the appended claims.

1 is a schematic configuration diagram for explaining a silicon ingot manufacturing apparatus according to an embodiment of the present invention,

Figure 2a, 2b is an embodiment showing a water-cooled rod cross-sectional view of the silicon ingot manufacturing apparatus according to the present invention,

Figure 3 is an embodiment for explaining a structure for connecting a plurality of water-cooled rod in the silicon ingot manufacturing apparatus according to the present invention,

4A and 4B illustrate an example for describing a process of growing a silicon ingot of the silicon ingot manufacturing apparatus of FIG. 1.

<Simple description of the main reference signs>

110: chamber 111: chamber bottom

120: crucible

130: heating unit

131: upper heating portion 132: first side heating portion

133: second side heating portion 134: third side heating portion

140: crucible mounting portion

141: first crucible mounting portion 142: second crucible mounting portion

143: cold plate

151, 152, 153: water-cooled rod group

171, 172, 173: valve

181a and 181b: first heat detection part 182: second heat detection part

191: upper insulation board 192: lower insulation board

191a: upper insulation plate moving part 192a: lower insulation plate moving part

193: side insulation 194: water-cooled rod insulation

196: sight glass 197: temperature measuring device

198: vacuum pump

199a: silicon and gas inlet 199b: gas outlet

211, 212, 213, 214: water supply pipe

251a, 261a: first coolant inlet 251b, 261b: second coolant inlet

252a and 262a: first coolant path part 252b and 262b: second coolant path part

253, 263: cooling water outlet

331: insulation plate support

341: crucible mounting support

351: water cooling rod support

411, 412, 413: cooling water supply

Claims (11)

In the silicon ingot manufacturing apparatus, chamber; A crucible installed in the chamber; A heating unit for generating the crucible; A crucible mounting portion on which the crucible is mounted; At least two or more water-cooled rod group formed below the crucible mounting portion, wherein the at least two or more water-cooled rod group, Silicon ingot manufacturing apparatus, characterized in that spaced apart from each other from the center of the crucible mounting portion, different water supply pipes are connected. The method of claim 1, wherein the heating portion: An upper heating part installed above the crucible; And A side heating part including a first side heating part installed on an upper side of the crucible side, a second side heating part installed on an intermediate part of the crucible side, and a third side heating part installed on a lower side of the crucible side; Silicon ingot manufacturing apparatus comprising a. The method of claim 1, wherein the crucible mounting portion: A first crucible mounting portion for supporting the crucible; A second crucible mounting portion in which an insertion groove into which the water cooling rod included in the water cooling rod group is inserted is formed; And A cooling plate installed between the second crucible mounting portion and the first crucible mounting portion; Silicon ingot manufacturing apparatus comprising a. The water cooling rod of claim 1, wherein the water cooling rod is included in: First and second cooling water inlets through which the coolant flows from the water supply pipe; First and second coolant path portions through which coolant flows from the first and second coolant inlets; And A cooling water discharge port configured to discharge the cooling water passing through the first and second cooling water path parts to the outside; Silicon ingot manufacturing apparatus comprising a. According to claim 1, wherein the silicon ingot manufacturing apparatus is: An upper heat insulating plate for insulating heat generated from the heat generating part; A lower heat insulating plate installed between the crucible mounting portion and the water cooling rod group; Side insulation formed between the lower insulation plate and the upper insulation plate; And A water-cooled rod heat insulating part for sealing and insulating the water-cooled rod group together with the lower heat insulating plate; Silicon ingot manufacturing apparatus further comprising a. The method of claim 5, wherein the silicon ingot manufacturing apparatus: A lower insulating plate moving part for moving the lower insulating plate in a direction parallel to the crucible mounting part; And A water cooling rod moving unit for moving the water cooling rod group up and down; Silicon ingot manufacturing apparatus further comprising a. The method of claim 5, wherein the silicon ingot manufacturing apparatus: An upper insulating plate moving part for moving the upper insulating plate in a direction parallel to the crucible mounting part; A see-through window for allowing a molten state of the melt inside the crucible to be checked from the outside; And A temperature measuring device for measuring the surface temperature of the melt inside the crucible through the see-through window; Silicon ingot manufacturing apparatus further comprising a. The apparatus of claim 1, wherein the silicon ingot manufacturing apparatus is: A crucible mounting part moving part for moving the crucible mounting part up and down; And A crucible mounting support for supporting the crucible mounting part at a predetermined height from the bottom surface of the chamber and opening and closing the bottom surface of the chamber according to the operation of the crucible mounting part moving part; Silicon ingot manufacturing apparatus further comprising a. According to claim 1, wherein the silicon ingot manufacturing apparatus is: A cooling water supply unit supplying cooling water to the water cooling rod group through a water supply pipe; A valve for opening and closing a water supply pipe connected between the cooling water supply unit and the water cooling rod group; A first heat sensing unit sensing a heating temperature of the heat generating unit; A second heat sensing unit sensing a heating temperature of the crucible mounting unit; And A valve controller controlling the opening / closing operation of the valve according to the heating temperature sensed by the first and second heat sensing units; Silicon ingot manufacturing apparatus further comprising a. According to claim 1, wherein the silicon ingot manufacturing apparatus is: A vacuum pump for maintaining the inside of the chamber in a vacuum state; Silicon ingot manufacturing apparatus further comprising a. According to claim 1, wherein the silicon ingot manufacturing apparatus is: A silicon and gas input unit into which a purge gas for removing silicon and impurities contained in the silicon is introduced into the crucible; And A gas outlet for discharging the gas generated by reacting the purified gas introduced into the crucible with silicon to the outside; Silicon ingot manufacturing apparatus further comprising a.

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