CN102666943A - Apparatus for manufacturing silicon ingots - Google Patents
Apparatus for manufacturing silicon ingots Download PDFInfo
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- CN102666943A CN102666943A CN2010800433667A CN201080043366A CN102666943A CN 102666943 A CN102666943 A CN 102666943A CN 2010800433667 A CN2010800433667 A CN 2010800433667A CN 201080043366 A CN201080043366 A CN 201080043366A CN 102666943 A CN102666943 A CN 102666943A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to an apparatus for manufacturing silicon ingots, comprising: a chamber; a crucible installed in the chamber; a heating unit for heating the crucible; a crucible-mounting unit on which the crucible is placed; and at least two or more water-cooling rod groups arranged below the crucible-mounting unit, wherein said at least two or more water-cooling rod groups are spaced apart from each other about the crucible mounting unit and connected to respective water supply pipes.
Description
Technical field
The present invention relates to a kind of preparation facilities of silicon ingot, in more detail, relate to a kind of through when silicon ingot solidifies, utilizing indivedual water-cooled bar controls freezing interface to have the preparation facilities of the silicon ingot of good < 100>the direction solidified structure of directional property.
Background technology
Along with the new line of the problem of nearest global warming, the exploitation of the new renewable energy resources is active to be carried out.Wherein, sunshine industry, the preservation of Energy resources nuisanceless because of it, no remuneration, safety advantages of higher demonstrated average annual growth more than 40% in nearest 5 years.
Current, owing to can't satisfactorily realize supply as the polysilicon of the basic raw material of solar cell, and demonstrate inverted pyramid type value chain.Supply falls short of demand owing to the sunshine component system that utilizes solar cell, causes rising as the price of raw-material polysilicon.
Thus, be devoted to always to guarantee that in related industries the supply and demand of silicon material is satisfactory.Supply and demand in order to ensure silicon material is smooth, and the scheme that is adopting at present is to make it grow into silicon ingot and use with a large amount of useless silicon that in the semiconductor wafers preparation section, produce are refining.
In the operation of preparation silicon ingot, when having fusion, important factor makes the temperature, fusion time, gas atmosphere, decompression state of silicon fusing etc., when solidifying, can control unidirectional solidification by setting rate (V)=speed of cooling (R)/thermograde (G).Usually, the unidirectional solidification of polysilicon be a kind of utilize the water-cooled bar in the early stage after the nucleation preparation have the process of silicon ingot of the crystallization direction of directional property good < 100 >.
According to nearest result of study, in the operation of preparation silicon ingot, important parameter is the freezing interface cooling temperature of control silicon ingot when solidifying.The reason that the instability of the freezing interface cooling temperature of silicon ingot also can become the phenomenon of the inside accumulative phenomenon of the crystal structure that causes silicon ingot, amesiality phenomenon, the inhomogeneous growth of crystallite size and produce the phenomenon of slight crack at silicon ingot.
Continuous relaxation cold excessively (SRS) method of solidifying according to temperature official post silicon ingot when in the preparation method of existing silicon ingot, existing crucible to move down on the other hand.Exist the silicon ingot that causes along with the vibration of elevator raise in crucible, forming to produce the problem of defective in this method, thus, put forward the method for utilizing the water-cooled bar that silicon ingot is grown up that shows.
The technology of proposition has Japanese publication openly flat 11-310496 number (denomination of invention: have the preparation method and the device of the silicon of the good unidirectional solidification tissue of directional property, below be called " documents 1 ") in order to utilize the water-cooled bar that silicon ingot is grown up.
What in documents 1, adopt is that the heating part of crystalline growth stove only is present in the upper and lower, the method for solidifying when crucible moves down because of elevator raise when solidifying.And, drop into argon (Ar) gas as rare gas element as refrigerant gas to the water-cooled bar, make refrigerant gas mobile refrigeration agent supply unit and preheating heating part of relief outlet and rare gas element in chamber.At this moment, stress newly to be used as argon (Ar) gas of refrigeration agent, build the impurity that argon (Ar) gas atmosphere reduces SiO, SiC and form to the internal feed of chamber from water-cooled bar one.
Yet, in documents 1, between the starting period of crystalline growth stove, need constantly to supply with argon (Ar) gas as refrigerant gas with the water-cooled bar.That is, owing to use argon (Ar) gas to reach more than 30 hours as the time of heat-eliminating medium, thereby the problem that exists the manufacturing cost of silicon ingot to uprise.
Summary of the invention
Technical problem
The present invention proposes under aforesaid background; The objective of the invention is to, a kind of preparation facilities that when the inner fused silicon of crucible solidifies, prepares the silicon ingot of the silicon ingot with good < 100>the direction solidified structure of directional property through the controlled chilling water yield is provided.
Attached purpose of the present invention is, a kind of preparation facilities that can prepare the silicon ingot of the silicon ingot with good < 100>the direction solidified structure of directional property through the temperature that control is used for the heating part of heating crucible is provided.
The means of dealing with problems
In order to reach aforesaid purpose, the preparation facilities of the silicon ingot of an embodiment of the present invention is characterized in that; Comprise: chamber, crucible, it is arranged in the chamber; The heating part, its heating crucible, crucible equipped section; It supplies crucible to place, and plural water-cooled bar group is formed at the below of crucible equipped section; Plural water-cooled bar group is arranged to isolate each other laterally from the center of crucible equipped section, and is connected with mutually different water-supply pipe.
The preparation facilities of the silicon ingot of additional embodiment of the present invention comprises: the heating part, top, and it is arranged at the top of crucible; The first side heat portion, it is arranged at the lateral top of crucible; The second side heat portion, it is arranged at the lateral pars intermedia of crucible; The 3rd side heat portion, it is arranged at the lateral bottom of crucible.
The preparation facilities of the silicon ingot of another additional embodiment of the present invention comprises: the first crucible equipped section, its crucible equipped section support crucible; The insertion groove that the second crucible equipped section, its formation are inserted the water-cooled bar; And cooling plate, it is arranged between the second crucible equipped section and the first crucible equipped section.
The preparation facilities of the silicon ingot of another additional embodiment of the present invention comprises: the upper thermal barrier plate, and it makes the thermal insulation in the heating part heating; The lower thermal barrier plate, it is arranged between crucible equipped section and the water-cooled bar group; The adiabatic material in side, it is formed between lower thermal barrier plate and the upper thermal barrier plate; And water-cooled bar insulation, itself and lower thermal barrier plate together make water-cooled bar group airtight and adiabatic.
The preparation facilities of the silicon ingot of another additional embodiment of the present invention; It is characterized in that; The water-cooled bar that is included in the water-cooled bar group comprises: first cooling-water flowing inlet, second cooling-water flowing inlet, and water coolant flow into first cooling-water flowing inlet, second cooling-water flowing inlet from water-supply pipe; The first water coolant path portion, the second water coolant path portion, the water coolant that flows into from first cooling-water flowing inlet, second cooling-water flowing inlet flows in the first water coolant path portion, the second water coolant path portion; And cooling water outlet, it makes via the water coolant of the first water coolant path portion, the second water coolant path portion and discharges to the outside.Here, the first water coolant path portion, the second water coolant path portion are that benchmark is formed at left and right and is embodied by any shape in tortuous (meander) shape (pattern) or the loop antenna shape (pattern) with the cooling water outlet.
The preparation facilities of the silicon ingot of another additional embodiment of the present invention comprises: the water coolant supply unit, and it supplies with water coolant for water-cooled bar group through water-supply pipe; Valve, it opens and closes water-supply pipe; The first thermal sensing portion, the Heating temperature of its sensing heating part; The second thermal sensing portion, the Heating temperature of its sensing crucible equipped section; And valve positioner, it comes the on-off action of by-pass valve control according to the Heating temperature that senses in the first thermal sensing portion, the second thermal sensing portion.
The effect of invention
Preparation facilities with silicon ingot of the present invention of aforesaid structure; Below the crucible equipped section, form plural water-cooled bar group; Thereby have following beneficial effect: when the inner fused silicon ingot of crucible solidifies, mobile crucible and prepare silicon ingot not with good < 100>the direction solidified structure of directional property through the cooling water inflow that supplies to each water-cooled bar group is controlled.
And; The preparation facilities of silicon ingot of the present invention; Be formed on a plurality of heating parts that top and the side each several part of crucible are provided with, thereby have following beneficial effect: can prepare silicon ingot through the temperature of the heating part of heating crucible is controlled with good < 100>the direction solidified structure of directional property.
And the preparation facilities of silicon ingot of the present invention comprises: the upper thermal barrier plate; The lower thermal barrier plate, it is arranged between crucible equipped section and the water-cooled bar group; The adiabatic material in side, it is formed between lower thermal barrier plate and the upper thermal barrier plate; Water-cooled bar insulation, itself and lower thermal barrier plate together make water-cooled bar group airtight and adiabatic, thereby the preparation facilities of silicon ingot of the present invention can be protected water-cooled bar group making through heating crucible under the silicon fused situation.And; Even open lower thermal barrier plate for fused silicon is solidified; Also since the heat of the inside of the isolated chamber of water-cooled bar insulation to outside drain, thereby have can be through controlling the beneficial effect for preparing the silicon ingot with good < 100>the direction solidified structure of directional property to the cooling water inflow that supplies to each water-cooled bar group.
And; In the preparation facilities of silicon ingot of the present invention; The first water coolant path portion, the second water coolant path portion that is used for making the flow of cooling water that flows into from first cooling-water flowing inlet, second cooling-water flowing inlet is that benchmark is formed at left and right and is revealed by tortuous (meander) shape or any bodies of loop antenna shape with the cooling water outlet, thereby the preparation facilities of silicon ingot of the present invention has when the inner fused silicon of crucible solidifies and can make the minimized beneficial effect of temperature deviation in the water-cooled bar.
Description of drawings
Fig. 1 is the brief configuration figure of preparation facilities that is used to explain the silicon ingot of one embodiment of the invention.
Fig. 2 and Fig. 3 are the embodiment of water-cooled bar sectional view of the preparation facilities of expression silicon ingot of the present invention.
Fig. 4 is used for explaining the embodiment that connects the structure of a plurality of water-cooled bars at the preparation facilities of silicon ingot of the present invention.
Fig. 5 and Fig. 6 are the embodiment that makes the process that silicon ingot grows up that is used for the silicon ingot preparation facilities of explanatory view 1.
Embodiment
Below, will the present invention be elaborated through preferred embodiment, so that the those of ordinary skill of technical field is understood also easily and can be realized under the present invention with reference to description of drawings.
Fig. 1 is the brief configuration figure of preparation facilities that is used to explain the silicon ingot of one embodiment of the invention; Fig. 2 and Fig. 3 are the embodiment of water-cooled bar sectional view of the preparation facilities of expression silicon ingot of the present invention, and Fig. 4 is used for explaining the embodiment that connects the structure of a plurality of water-cooled bars 130 at the preparation facilities of silicon ingot of the present invention.
At first, describe with reference to Fig. 1, as shown in the figure, the preparation facilities of the silicon ingot of present embodiment comprises chamber 110, crucible 120, heating part 130, crucible equipped section 140 and water-cooled bar group 151,152,153 substantially.
Crucible 120 is used to receive the silicon raw material that will grow into silicon ingot, and crucible 120 should be by can be anti-constituting in the material of the melt temperature of melts.As an example, in the present invention, crucible 120 is preferably by quartz and constitutes.
Crucible equipped section 140 is used to place crucible 120, uses the crucible equipped section 140 by graphite (graphite) constitutes and the surface applies with SiC.As an example, crucible equipped section 140 can comprise: the first crucible equipped section 141, its crucible equipped section 140 support crucibles 120; The insertion groove that the second crucible equipped section 142, its formation are inserted the water-cooled bar; Cooling plate 143, it is arranged between the second crucible equipped section 142 and the first crucible equipped section 141.Here, cooling plate 143 can be made up of the alloy of copper and tungsten or the alloy of copper and molybdenum.
Indivedual water-cooled rods of water-cooled bar group 151,152,153 are formed in the below of crucible equipped section 140, and material is made up of copper (Cu), and the surface applies with tungsten or hard chromium.The water-cooled bar is used for fusing point that temperature with the base section of crucible 120 sharply drops to silicon begins to carry out melts to get off initial stage and solidifies.
Below, will be elaborated to the structure of water-cooled bar group 151,152,153 with reference to Fig. 2, Fig. 3 and Fig. 4.
At first, shown in Fig. 2 is the water-cooled bar of first embodiment, as shown in the figure, and indivedual water-cooled bars of water-cooled bar group 151,152,153 comprise: first, second cooling- water flowing inlet 251a, 251b are used to make water coolant to flow into from water-supply pipe; First, second water coolant path 252a of portion, 252b; Be used to make the flow of cooling water that flows into from first, second cooling- water flowing inlet 251a, 251b; Cooling water outlet 253, be used to make via the water coolant of first, second water coolant path 252a of portion, 252b to the outside for example water coolant supply unit (Reference numeral 413 of Fig. 1) discharge.
As shown in Figure 2; The shape of water-cooled bar is
font; And constitute by post 257 and upper body 258; Wherein, With regard to post 257, be that benchmark forms first, second cooling- water flowing inlet 251a, 251b in both sides with cooling water outlet 253, with regard to upper body 258; With cooling water outlet 253 be benchmark about form first, second water coolant path 252a of portion, 252b, this upper body 258 has complications (meander) shape.As shown in Figure 2, first, second water coolant path 252a of portion, 252b lengthways form the flow of cooling water path, and the temperature deviation in the water-cooled bar is minimized, and then can improve the thermo-efficiency of water coolant for crucible equipped section (Reference numeral 140 of Fig. 1).
Shown in Fig. 3 is the water-cooled bar of second embodiment; As shown in the figure; Indivedual water-cooled bars of water-cooled bar group 151,152,153 comprise: first, second cooling-water flowing inlet 261a, 261b; Be used to make water coolant to flow into from water-supply pipe, first, second water coolant path 262a of portion, 262b are used to make the flow of cooling water that flows into from first, second cooling-water flowing inlet 261a, 261b; Cooling water outlet 263, be used to make via the water coolant of first, second water coolant path 262a of portion, 262b to the outside for example water coolant supply unit (Reference numeral 413 of Fig. 1) discharge.
As shown in Figure 3; The shape of water-cooled bar is
font and constitutes; With cooling water outlet 263 is that benchmark forms first, second cooling-water flowing inlet 261a, 261b in both sides, and first, second water coolant path 262a of portion, 262b are that benchmark is of similar shape (pattern) in both sides with cooling water outlet 263.First, second cooling-water flowing inlet 261a, 261b and cooling water outlet 263 form along the z direction, and first, second water coolant path 262a of portion, 262b are formed by loop antenna shape on the x-y plane.As shown in Figure 3, first, second water coolant path 262a of portion, 262b lengthways form the flow of cooling water path, and the temperature deviation in the water-cooled bar is minimized, and then can improve the thermo-efficiency of water coolant for crucible equipped section (Reference numeral 140 of Fig. 1).
As shown in Figure 4, each water-cooled bar group 151,152,153 is arranged to isolate each other laterally from the center of crucible equipped section 40.Water-cooled bar group 151 receives water coolant from water-supply pipe (Reference numeral 211 of Fig. 1), and water-cooled bar group 152 receives water coolant from water-supply pipe (Reference numeral 212 of Fig. 1), and water-cooled bar group 153 receives water coolant from water-supply pipe (Reference numeral 213 of Fig. 1).Each water-cooled bar group 151,152,153 can receive the water coolant of uniform temp, also can receive the water coolant of differing temps.And each water-cooled bar group 151,152,153 can receive mutually different cooling water inflow.Shown in Fig. 4 is that each water-cooled bar group 151,152,153 is configured to the orthogonal structure, but each water-cooled bar group 151,152,153 also can be rounded laterally from the center of crucible equipped section 40.
Below, will describe with reference to Fig. 1 once more.As shown in Figure 1, according to additional embodiment of the present invention, the preparation facilities of silicon ingot of the present invention also can comprise: water coolant supply unit 411,412,413, and supply with water coolant for water-cooled bar group 151,152,153 through water-supply pipe 211,212,213; Valve 171,172,173 opens and closes water-supply pipe 211,212,213; First 181a of thermal sensing portion, 181b, the Heating temperature of sensing heating part 130; The second thermal sensing portion 182, the Heating temperature of sensing crucible equipped section 140, valve positioner 414, it comes the on-off action of by-pass valve control 171,172,173 according to the Heating temperature that senses at the 181a of first, second thermal sensing portion, 181b, 182.Here, Reference numeral 214 is that internal space to chamber 110 provides the water-supply pipe from the water coolant of water coolant supply unit 413.
Valve 171,172,173 for example can be made up of electromagnetic valve.The water coolant storage volume of each water coolant supply unit 411,412,413 can be identical, also can be different.Here; Water coolant supply unit 411,412,413 is connected respectively with a plurality of water-supply pipes 211,212,213; And comprising a plurality of water coolant reservoir and the refrigerating unit that the water coolant storage volume is different, this refrigerating unit for example utilizes refrigerant gas that the water of putting into the water coolant reservoir is cooled off.
According to this embodiment; The preparation facilities of silicon ingot of the present invention; Come the temperature and the cooling water inflow of the water coolant of subtend water-cooled bar group 151,152,153 supplies to control individually by valve positioner 414, can prepare the silicon ingot of solidified structure through controlled chilling water temp and cooling water inflow when fused silicon is solidified with good < 100>direction of directional property.
The preparation facilities of silicon ingot of the present invention also can comprise: crucible equipped section moving part (not shown), and it moves up and down crucible equipped section 140; Crucible equipped section supporter 341, its from chamber bottom surface 111 with predetermined height support crucible equipped section 140, and along with the action of crucible equipped section moving part opens and closes cavity bottom face 111.Here, crucible equipped section moving part is the device that crucible equipped section 140 is moved up and down, and for example can be made up of the gear of motor with the action of control motor.
The preparation facilities of silicon ingot of the present invention also can comprise: upper thermal barrier plate 191, and it makes the thermal insulation of 130 heating in the heating part; Lower thermal barrier plate 192, it is arranged at crucible equipped section 140 and water-cooled bar group 151,152, between 153; The adiabatic material 193 in side, it is formed between lower thermal barrier plate 192 and the upper thermal barrier plate 191; Water-cooled bar insulation 194, itself and lower thermal barrier plate 192 together make water-cooled bar group 151,152,153 airtight and adiabatic; Lower thermal barrier plate moving part 192a, it makes lower thermal barrier plate 192 to moving with crucible equipped section 140 direction side by side; Water-cooled bar moving part (not shown), it moves up and down water-cooled bar group 151,152,153.Among Fig. 1, Reference numeral 331 is the heat-insulating shield support, and this heat-insulating shield support is used to support lower thermal barrier plate 192 and side heat-insulating shield 193.Reference numeral 351 is the water-cooled shaft bar, and this water-cooled shaft bar is used to support water-cooled bar group 151,152,153.
Here; Lower thermal barrier plate moving part 192a is discharging crucible 120 or is making water-cooled bar group 151,152,153 when move crucible equipped section 140, be used to the device that lower thermal barrier plate 192 is moved to the outside; As an example, lower thermal barrier plate moving part 192a can be made up of the gear of motor with the action of control motor.Water-cooled bar moving part is the device that when making the silicon melts unidirectional solidification that is stored in the crucible 120, water-cooled bar group 151,152,153 is moved up and down, and water-cooled bar moving part for example can be made up of the gear of motor with the action of control motor.
The preparation facilities of silicon ingot of the present invention also can comprise: upper thermal barrier plate moving part 191a, and it makes upper thermal barrier plate 191 to moving with crucible equipped section 140 direction side by side; Perspective window 196, it impels can confirm the molten state at the crucible 120 inner melts that exist from the outside; Temperature measuring apparatus 197, it is measured through 196 pairs of surface temperatures at the crucible 120 inner melts that exist of perspective window.
Upper thermal barrier plate moving part 191a is the device that when the temperature of the silicon melts of confirming crucible 120 inside, upper thermal barrier plate 191 is moved, and for example can be made up of the gear of motor with the action of control motor.As an example, temperature measuring apparatus 197 can be made up of the pyrometer (pyrometer) of the surface temperature that is used to be determined at the crucible 120 inner melts that exist.Pyrometer (pyrometer) is that the surface brightness of the melts that come out by reflection object with the laser that shone is the device of the temperature of fundamental measurement body surface.
The preparation facilities of silicon ingot of the present invention also can comprise vacuum pump 198, and this vacuum pump 198 makes chamber 110 inner sustain vacuum states.Vacuum pump 198 is that chamber 110 inner vacuum tightnesss are kept the constant device, as an example, can be made up of rotor pump and topping-up pump.
The preparation facilities of silicon ingot of the present invention also can comprise silicon and gas throw-in part 199a and gas discharge outlet 199b.Silicon and gas throw-in part 199a are used for to inner silicon and the Purge gas that is used to remove the impurity that silicon contains of dropping into of crucible 120.Purge gas plays the carrier function that makes silicon flow into silicon and gas throw-in part 130.Gas discharge outlet 199b discharges the gas that is reacted and generated by the Purge gas of putting into crucible 120 and silicon to the outside.
Fig. 5 and Fig. 6 are the embodiment that makes the process that silicon ingot grows up that is used for the silicon ingot preparation facilities of explanatory view 1.
At first, describe with reference to Fig. 5.After chamber 110 inside are ready to crucible 120, drop into silicon and Purge gas to crucible 120 inside through silicon and gas throw-in part 199a.
Afterwards, drive heating part 130 and make Heating temperature reach the silicon melt temperature, for example more than 1420 ℃.The heating part after the 130 driving scheduled times, is solidified in order to make the silicon melts in the crucible 120, lower thermal barrier plate 192 is moved and drive lower thermal barrier plate moving part 192a.Afterwards, water-cooled bar group 151,152,153 is moved to crucible equipped section 140.At this moment, though open lower thermal barrier plate 192, also can be by the inner heat of isolated chambers of water-cooled bar insulation 194 110 to outside drain.
If water-cooled bar group 151,152,153 is positioned at crucible equipped section 140,414 of valve positioners pass through water-supply pipe 211,212,213 and supply with water coolants to water-cooled bar group 151,152,153.Valve positioner 414 comes the on-off action of by-pass valve control 171,172,173 to come the controlled chilling water yield according to first 181a of thermal sensing portion, the 181b of the Heating temperature that is used for sensing heating part 130 and the second thermal sensing portion 182 and the Heating temperature that the 181a of first, second thermal sensing portion, 181b, 182 sense that are used for the Heating temperature of sensing crucible equipped section 140.
Below, will describe with reference to Fig. 6.Of Fig. 5, when the silicon melts of crucible 120 solidifies and when forming silicon ingot, drive crucible equipped section moving part crucible equipped section supporter 341 is moved to the bottom.Though not shown, crucible equipped section moving part for example can be made up of the gear of motor with the action of control motor.
When crucible equipped section supporter 341 moved down, crucible equipped section 140 also together moved down with the bottom surface 111 of water-cooled bar group 151,152,153 and water-cooled bar insulation 194 and chamber.The crucible 120 that the silicon melts solidifies is fully moved to other place, and new crucible 120 is positioned over crucible equipped section 140.Afterwards, if new crucible 120 moves to the inside of chamber 110, then again silicon and Purge gas are put into crucible 120, thereby generate the process of silicon melts again.
Hereto, through the embodiment shown in the accompanying drawing the present invention is specified in this specification sheets, so that the easy understanding of the those of ordinary skill of technical field also can realize the present invention under the present invention, but these are exemplary.The those of ordinary skill of technical field should be appreciated that and can realize various distortion and other embodiment that are equal to according to embodiments of the invention under the present invention.Thus, the present invention's technical scope of really requiring to protect should only be limited appending claims.
Claims (11)
1. the preparation facilities of a silicon ingot is characterized in that,
Comprise:
Chamber,
Crucible, it is arranged in the above-mentioned chamber,
The heating part, it heats above-mentioned crucible,
The crucible equipped section, it supplies above-mentioned crucible to place,
Plural water-cooled bar group is formed at the below of above-mentioned crucible equipped section;
Above-mentioned plural water-cooled bar group is arranged to isolate each other laterally from the center of above-mentioned crucible equipped section, and is connected with mutually different water-supply pipe.
2. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
Above-mentioned heating part comprises:
The heating part, top, it is arranged at the top of above-mentioned crucible; And
Side heat portion, it comprise the lateral top that is arranged at above-mentioned crucible the first side heat portion, be arranged at above-mentioned crucible lateral pars intermedia the second side heat portion and be arranged at the 3rd side heat portion of the lateral bottom of above-mentioned crucible.
3. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
Above-mentioned crucible equipped section comprises:
The first crucible equipped section, it supports above-mentioned crucible;
The second crucible equipped section, its formation make the insertion groove of the water-cooled bar insertion that is included in the above-mentioned water-cooled bar group; And
Cooling plate, it is arranged between the above-mentioned second crucible equipped section and the first crucible equipped section.
4. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
The water-cooled bar that is included in the above-mentioned water-cooled bar group comprises:
First cooling-water flowing inlet, second cooling-water flowing inlet, water coolant flow into said first cooling-water flowing inlet, second cooling-water flowing inlet from water-supply pipe;
The first water coolant path portion, the second water coolant path portion, the water coolant that flows into from above-mentioned first cooling-water flowing inlet, second cooling-water flowing inlet flows in the said first water coolant path portion, the second water coolant path portion; And
Cooling water outlet, it makes via the water coolant of the above-mentioned first water coolant path portion, the second water coolant path portion and discharges to the outside.
5. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
The upper thermal barrier plate, it makes the thermal insulation in the heating of above-mentioned heating part;
The lower thermal barrier plate, it is arranged between above-mentioned crucible equipped section and the water-cooled bar group;
The adiabatic material in side, it is formed between above-mentioned lower thermal barrier plate and the upper thermal barrier plate; And
Water-cooled bar insulation, itself and above-mentioned lower thermal barrier plate together make above-mentioned water-cooled bar group airtight and adiabatic.
6. the preparation facilities of silicon ingot according to claim 5 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
Lower thermal barrier plate moving part, it makes above-mentioned lower thermal barrier plate to moving with above-mentioned crucible equipped section direction side by side; And
Water-cooled bar moving part, it moves up and down above-mentioned water-cooled bar group.
7. the preparation facilities of silicon ingot according to claim 5 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
Upper thermal barrier plate moving part, it makes above-mentioned upper thermal barrier plate to moving with above-mentioned crucible equipped section direction side by side;
The perspective window, it impels can confirm the molten state at the melts of the inside of above-mentioned crucible existence from the outside; And
Temperature measuring apparatus, it is measured the surface temperature of the melts that exists in the inside of above-mentioned crucible through above-mentioned perspective window.
8. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
Crucible equipped section moving part, it moves up and down above-mentioned crucible equipped section; And
Crucible equipped section supporter, above-mentioned crucible equipped section is supported with predetermined height in its bottom surface from above-mentioned chamber, and opens and closes the bottom surface of above-mentioned chamber along with the action of above-mentioned crucible equipped section moving part.
9. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
The water coolant supply unit, it supplies with water coolant for above-mentioned water-cooled bar group through water-supply pipe;
Valve, it opens and closes the water-supply pipe that is connected between above-mentioned water coolant supply unit and the above-mentioned water-cooled bar group;
The first thermal sensing portion, the Heating temperature of its above-mentioned heating part of sensing;
The second thermal sensing portion, the Heating temperature of the above-mentioned crucible of its sensing equipped section; And
Valve positioner, it controls the on-off action of above-mentioned valve according to the Heating temperature that senses in the above-mentioned first thermal sensing portion, the second thermal sensing portion.
10. the preparation facilities of silicon ingot according to claim 1 is characterized in that, the preparation facilities of above-mentioned silicon ingot also comprises vacuum pump, and this vacuum pump makes the inner sustain vacuum state of above-mentioned chamber.
11. the preparation facilities of silicon ingot according to claim 1 is characterized in that,
The preparation facilities of above-mentioned silicon ingot also comprises:
Silicon and gas throw-in part: it drops into silicon and the Purge gas that is used for removing the impurity that above-mentioned silicon contains to inside of above-mentioned crucible; And
Gas discharge outlet, it makes by the Purge gas of putting into above-mentioned crucible and the silicon gas that generates that reacts and discharges to the outside.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0091632 | 2009-09-28 | ||
| KR1020090091632A KR100947836B1 (en) | 2009-09-28 | 2009-09-28 | Apparatus for manufacturing silicon ingot |
| PCT/KR2010/006473 WO2011037393A2 (en) | 2009-09-28 | 2010-09-20 | Apparatus for manufacturing silicon ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102666943A true CN102666943A (en) | 2012-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800433667A Pending CN102666943A (en) | 2009-09-28 | 2010-09-20 | Apparatus for manufacturing silicon ingots |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100947836B1 (en) |
| CN (1) | CN102666943A (en) |
| WO (1) | WO2011037393A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108505113A (en) * | 2018-05-24 | 2018-09-07 | 江阴东升新能源股份有限公司 | Silicon core side ingot ingot furnace directional air-guiding block |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2530187A1 (en) * | 2011-06-03 | 2012-12-05 | Evonik Solar Norge AS | Refining of silicon by directional solidification in an oxygen-containing atmosphere |
| KR20140057305A (en) * | 2011-08-01 | 2014-05-12 | 지티에이티 코포레이션 | Liquid-cooled heat exchanger |
| US20130239621A1 (en) * | 2011-09-14 | 2013-09-19 | MEMC Singapore, Pte. Ltd. (UEN200614797D) | Directional Solidification Furnace With Laterally Movable Insulation System |
| WO2013040219A1 (en) * | 2011-09-14 | 2013-03-21 | Memc Singapore Pte, Ltd. | Directional solidification furnace having movable heat exchangers |
| KR101292223B1 (en) | 2011-12-08 | 2013-08-02 | 주식회사 엘지실트론 | Silicon single crystal cooling cylinder and silicon single crystal growth apparatus including the same |
| KR101390804B1 (en) * | 2013-01-23 | 2014-05-02 | 주식회사 엘지실트론 | An apparatus for growing a single crystal ingot |
| KR101444589B1 (en) | 2013-03-29 | 2014-09-26 | 충남대학교산학협력단 | The high purity mother alloy manufacturing method from the metal scrap using the molten salt electrolytic refining method and integrated salt distillation ingot manufacturing device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166711A (en) * | 1986-12-26 | 1988-07-09 | Osaka Titanium Seizo Kk | Production of polycrystalline silicon ingot |
| US20040261691A1 (en) * | 2003-06-25 | 2004-12-30 | Kentaro Doguchi | Crystallization apparatus and method |
| US20070227189A1 (en) * | 2004-03-29 | 2007-10-04 | Kyocera Corporation | Silicon Casting Apparatus and Method of Producing Silicon Ingot |
| CN200968773Y (en) * | 2006-05-08 | 2007-10-31 | 上海普罗新能源有限公司 | Ingot furnace for preparing polycrystalline silicon |
| CN101089233A (en) * | 2006-06-13 | 2007-12-19 | 赵荣相 | Manufacturing equipment for polysilicon ingot |
| CN201151753Y (en) * | 2007-11-07 | 2008-11-19 | 常州华盛天龙机械有限公司 | Graphite heat conducting block |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19607098C2 (en) | 1996-02-24 | 1999-06-17 | Ald Vacuum Techn Gmbh | Method and device for the directional solidification of a silicon melt into a block in a bottomless metallic cold wall crucible |
| JPH10182137A (en) | 1996-12-26 | 1998-07-07 | Kawasaki Steel Corp | Solidifying purification of silicon for solar cell and apparatus therefor |
| KR100916843B1 (en) | 2009-01-13 | 2009-09-14 | 김영조 | Manufacturing high efficiency equipment for polysilicon ingot |
-
2009
- 2009-09-28 KR KR1020090091632A patent/KR100947836B1/en not_active IP Right Cessation
-
2010
- 2010-09-20 CN CN2010800433667A patent/CN102666943A/en active Pending
- 2010-09-20 WO PCT/KR2010/006473 patent/WO2011037393A2/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166711A (en) * | 1986-12-26 | 1988-07-09 | Osaka Titanium Seizo Kk | Production of polycrystalline silicon ingot |
| US20040261691A1 (en) * | 2003-06-25 | 2004-12-30 | Kentaro Doguchi | Crystallization apparatus and method |
| US20070227189A1 (en) * | 2004-03-29 | 2007-10-04 | Kyocera Corporation | Silicon Casting Apparatus and Method of Producing Silicon Ingot |
| CN200968773Y (en) * | 2006-05-08 | 2007-10-31 | 上海普罗新能源有限公司 | Ingot furnace for preparing polycrystalline silicon |
| CN101089233A (en) * | 2006-06-13 | 2007-12-19 | 赵荣相 | Manufacturing equipment for polysilicon ingot |
| CN201151753Y (en) * | 2007-11-07 | 2008-11-19 | 常州华盛天龙机械有限公司 | Graphite heat conducting block |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108505113A (en) * | 2018-05-24 | 2018-09-07 | 江阴东升新能源股份有限公司 | Silicon core side ingot ingot furnace directional air-guiding block |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100947836B1 (en) | 2010-03-18 |
| WO2011037393A3 (en) | 2011-09-15 |
| WO2011037393A2 (en) | 2011-03-31 |
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Application publication date: 20120912 |