WO2011037393A3 - Apparatus for manufacturing silicon ingots - Google Patents

Apparatus for manufacturing silicon ingots Download PDF

Info

Publication number
WO2011037393A3
WO2011037393A3 PCT/KR2010/006473 KR2010006473W WO2011037393A3 WO 2011037393 A3 WO2011037393 A3 WO 2011037393A3 KR 2010006473 W KR2010006473 W KR 2010006473W WO 2011037393 A3 WO2011037393 A3 WO 2011037393A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
manufacturing silicon
silicon ingots
mounting unit
chamber
Prior art date
Application number
PCT/KR2010/006473
Other languages
French (fr)
Korean (ko)
Other versions
WO2011037393A2 (en
Inventor
이근택
박성은
박종훈
Original Assignee
주식회사 세미머티리얼즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미머티리얼즈 filed Critical 주식회사 세미머티리얼즈
Priority to CN2010800433667A priority Critical patent/CN102666943A/en
Publication of WO2011037393A2 publication Critical patent/WO2011037393A2/en
Publication of WO2011037393A3 publication Critical patent/WO2011037393A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The present invention relates to an apparatus for manufacturing silicon ingots, comprising: a chamber; a crucible installed in the chamber; a heating unit for heating the crucible; a crucible-mounting unit on which the crucible is placed; and at least two or more water-cooling rod groups arranged below the crucible-mounting unit, wherein said at least two or more water-cooling rod groups are spaced apart from each other about the crucible mounting unit and connected to respective water supply pipes.
PCT/KR2010/006473 2009-09-28 2010-09-20 Apparatus for manufacturing silicon ingots WO2011037393A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800433667A CN102666943A (en) 2009-09-28 2010-09-20 Apparatus for manufacturing silicon ingots

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0091632 2009-09-28
KR1020090091632A KR100947836B1 (en) 2009-09-28 2009-09-28 Apparatus for manufacturing silicon ingot

Publications (2)

Publication Number Publication Date
WO2011037393A2 WO2011037393A2 (en) 2011-03-31
WO2011037393A3 true WO2011037393A3 (en) 2011-09-15

Family

ID=42183377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006473 WO2011037393A2 (en) 2009-09-28 2010-09-20 Apparatus for manufacturing silicon ingots

Country Status (3)

Country Link
KR (1) KR100947836B1 (en)
CN (1) CN102666943A (en)
WO (1) WO2011037393A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530187A1 (en) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Refining of silicon by directional solidification in an oxygen-containing atmosphere
EP2739771A4 (en) * 2011-08-01 2014-11-19 Gtat Corp Liquid-cooled heat exchanger
KR20140059803A (en) * 2011-09-14 2014-05-16 엠이엠씨 싱가포르 피티이. 엘티디. Directional solidification furnace having movable heat exchangers
US20130239621A1 (en) * 2011-09-14 2013-09-19 MEMC Singapore, Pte. Ltd. (UEN200614797D) Directional Solidification Furnace With Laterally Movable Insulation System
KR101292223B1 (en) 2011-12-08 2013-08-02 주식회사 엘지실트론 Silicon single crystal cooling cylinder and silicon single crystal growth apparatus including the same
KR101390804B1 (en) * 2013-01-23 2014-05-02 주식회사 엘지실트론 An apparatus for growing a single crystal ingot
KR101444589B1 (en) 2013-03-29 2014-09-26 충남대학교산학협력단 The high purity mother alloy manufacturing method from the metal scrap using the molten salt electrolytic refining method and integrated salt distillation ingot manufacturing device
CN108505113A (en) * 2018-05-24 2018-09-07 江阴东升新能源股份有限公司 Silicon core side ingot ingot furnace directional air-guiding block

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10182137A (en) * 1996-12-26 1998-07-07 Kawasaki Steel Corp Solidifying purification of silicon for solar cell and apparatus therefor
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
KR100916843B1 (en) * 2009-01-13 2009-09-14 김영조 Manufacturing high efficiency equipment for polysilicon ingot

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166711A (en) * 1986-12-26 1988-07-09 Osaka Titanium Seizo Kk Production of polycrystalline silicon ingot
JP2005015264A (en) * 2003-06-25 2005-01-20 Canon Inc Apparatus and method for manufacturing crystal
US7867334B2 (en) * 2004-03-29 2011-01-11 Kyocera Corporation Silicon casting apparatus and method of producing silicon ingot
CN200968773Y (en) * 2006-05-08 2007-10-31 上海普罗新能源有限公司 Ingot furnace for preparing polycrystalline silicon
KR100861412B1 (en) * 2006-06-13 2008-10-07 조영상 Manufacturing equipment for poly silicon ingot
CN201151753Y (en) * 2007-11-07 2008-11-19 常州华盛天龙机械有限公司 Graphite heat conduction block

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
JPH10182137A (en) * 1996-12-26 1998-07-07 Kawasaki Steel Corp Solidifying purification of silicon for solar cell and apparatus therefor
KR100916843B1 (en) * 2009-01-13 2009-09-14 김영조 Manufacturing high efficiency equipment for polysilicon ingot

Also Published As

Publication number Publication date
CN102666943A (en) 2012-09-12
KR100947836B1 (en) 2010-03-18
WO2011037393A2 (en) 2011-03-31

Similar Documents

Publication Publication Date Title
WO2011037393A3 (en) Apparatus for manufacturing silicon ingots
EP2212548A4 (en) Control system for extracting power from water flow
EP2518581A4 (en) Mass flow controller system
PL2153136T3 (en) Hot water supplying system
IL219376A0 (en) Thermal desalination process
IL216625A0 (en) Device for recovering heat from wastewater, thermal system including such a device, and method
GB2455743B (en) Cooling system expansion tank
AP2010005190A0 (en) Plant stem cell line derived from quiescent centerand method for isolating the same
AP2010005310A0 (en) Methods and compositions for the removal of impurities and water from the Bayer process.
IT1391290B1 (en) METHOD TO ELIMINATE BORON IMPURITIES IN METALLURGICAL SILICON.
ZA201003186B (en) Method for the production of calcium carbide on an industrial scale in an electric low-shaft furnace
FR2944520B1 (en) PROCESS AND INSTALLATION FOR THE PURIFICATION OF METALLURGICAL SILICON.
IL209310A0 (en) Apparatus for treating wastewater, particularly wastewater originating from a process for the production of photovoltaic cells
FR2943317B1 (en) METHOD FOR MANUFACTURING AIR INLET LAUNCHER FOR AN AIRCRAFT NACELLE
FR2902425B1 (en) PROCESS FOR PRODUCING PRIMARY DIAMINS
WO2011071247A3 (en) Heat exchanger having combustion chamber and combustion apparatus including same
GB0918126D0 (en) Water recirculation system for power plant backend gas temperature control
ZA201006208B (en) Method for purifying silicon for photovoltaic applications
WO2007096457A3 (en) Arrangement and method for cooling a solution
WO2011109846A3 (en) Space-saving purging system for pressure-closed pipe systems comprising central, location-dependent ventilation points
WO2013127832A3 (en) Fluidized bed reactor
GB2453170B (en) A refrigeration system which includes apparatus for heating water by using heat from the refrigeration system
WO2013080088A3 (en) Induction heating apparatus
WO2011043550A3 (en) Cooling control system and water-cooling rod for use in an apparatus for manufacturing silicon ingots
IL183462A0 (en) A system for controlling the temperature of the supplied fluid from a thermal solar absorber or thermal solar field

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080043366.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10819034

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1028/MUMNP/2012

Country of ref document: IN

122 Ep: pct application non-entry in european phase

Ref document number: 10819034

Country of ref document: EP

Kind code of ref document: A2