CN203049077U - Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace - Google Patents
Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace Download PDFInfo
- Publication number
- CN203049077U CN203049077U CN 201320038975 CN201320038975U CN203049077U CN 203049077 U CN203049077 U CN 203049077U CN 201320038975 CN201320038975 CN 201320038975 CN 201320038975 U CN201320038975 U CN 201320038975U CN 203049077 U CN203049077 U CN 203049077U
- Authority
- CN
- China
- Prior art keywords
- plate
- heat exchange
- radially
- distribution
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses a circumference radial-type heat exchange platform for a polycrystalline silicon ingot furnace. The circumference radial-type heat exchange platform for the polycrystalline silicon ingot furnace comprises a heat exchange plate, a radial distribution plate and a distribution base plate; the upper part of the radial distribution plate is fixedly connected with the heat exchange plate; the lower part of the radial distribution plate is fixedly connected with the distribution base plate; air ventilation grooves which are radially arranged from the center outward are formed on the lower part of the heat exchange plate; a plurality of distribution air holes which are through and are distributed in an array mode are formed on the radial distribution plate; the distribution air holes and the air ventilation grooves are communicated, and the cross section areas of the plurality of distribution air holes increase gradually in the radial direction of the radial distribution plate; the middle part of the distribution base plate is provided with an air inlet; a sealed confluence air channel is arranged between the heat exchange plate and the radial distribution plate; an air exhaust channel and a distribution chamber are arranged between the radial distribution plate and the distribution base plate; the distribution chamber is respectively communicated with the air inlet and the distribution air holes; and the air ventilation grooves are communicated with the air exhaust channel through the confluence air channel. According to the utility model, in heat exchange temperature reduction, temperature of the bottom of a crucible can be cooled down uniformly; the heat field of the heat exchange platform is optimized; and the crystal increasing quality of ingots in a crucible is improved.
Description
Technical field
The utility model relates to a kind of circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace, belongs to sun power industry polycrystalline silicon ingot or purifying furnace production unit field.
Background technology
At present, polycrystalline silicon ingot or purifying furnace is the main production equipments of polysilicon in the present photovoltaic industry, behind the several stages such as casting ingot process process heat fused, directional long crystal, annealing, cooling, becomes the polycrystal silicon ingot with certain crystal growth direction.The polycrystalline silicon ingot casting process environment is polycrystalline ingot furnace thermal field, in the polycrystalline silicon growth process, the temperature control of crucible bottom is determined by heat loss through radiation, the mode of heat loss through radiation mainly is two kinds at present: the one, by the power of adjusting well heater and the aperture of polycrystalline furnace stove inner bottom part heat-insulation cage, lower the temperature by the radiation of heat exchange platform, i.e. the radiation conduction mode; Another kind is to take away heat by regulating heater power and heat exchange platform internal ventilation, realizes heat radiation, and the heat-insulation cage sealing is not opened, i.e. the air cooling conduction mode.Because the position that arranges of well heater is end face and four sides that are distributed in the polycrystalline ingot casting, so the bottom temp distribution characteristics of polycrystalline ingot casting is: temperature is higher than the middle part all around.The air cooling conduction mode of polycrystalline furnace ingot casting radiating and cooling, be exactly a kind of gas quench system for the polycrystalline ingot furnace and method, the inside that is the graphite body heat exchange platform of thermal field in ingot furnace arranges gas flow, cold air enters, take away heat, gas circulation realizes heat exchange, thereby reaches the long brilliant purpose of radiating and cooling.Because the bottom temp distribution characteristics of polycrystalline ingot casting is low between senior middle school all around, uses conventional heat exchange platform, the temperature inhomogeneous cooling of crucible bottom is even, can't reach the optimization of long crystalloid amount.
Summary of the invention
Technical problem to be solved in the utility model is to overcome the deficiencies in the prior art, a kind of circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace is provided, when it is lowered the temperature in heat exchange, can make the temperature cooling of crucible bottom evenly, optimize the thermal field of heat exchange platform, improved the long crystalloid amount of ingot casting in the crucible.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace, comprise heat exchanger plate, radially spreader plate and the shunting substrate, radially fixedly connected with heat exchanger plate in the top of spreader plate, radially fixedly connected with the shunting substrate in the bottom of spreader plate, have the air channel of arranging to outside radial with the center in the bottom of heat exchanger plate, radially have a plurality of perforations on the spreader plate and shunting pore that be the array-like distribution, this shunting pore is communicated with air channel, and the cross-sectional area of a plurality of shunting pores is in the radially increase gradually in the radial direction of spreader plate, the middle part of shunting substrate is provided with air inlet port, heat exchanger plate and radially be provided with the air flue that confluxes of sealing between the spreader plate, radially be provided with outlet passageway and diffluence room between spreader plate and the shunting substrate, this diffluence room is communicated with air inlet port and shunting pore respectively, and air channel is communicated with outlet passageway by the air flue that confluxes.
Further, the described air flue that confluxes is made up of the following collecting tray of driving on heat exchanger plate collecting tray and open on spreader plate radially, and on collecting tray corresponding with following collecting tray.
Further, described outlet passageway is by opening on spreader plate outside radially production well and opening at the lower production well of shunting substrate outside and forms, last production well and lower production well connection.
Further, described heat exchanger plate, radially spreader plate and the shunting substrate make by graphite material.
After having adopted technique scheme, because the radially circumference distribution radially of the shunting pore of spreader plate, therefrom the cross-sectional area of the shunting pore of mind-set periphery is increasing, it is big by the even change around the middle mind-set to have formed cold air flow, thereby adapted to the low inhomogeneous feature of height and center around the bottom temp of polycrystalline ingot casting, optimized heat exchange platform thermal field, make the lowering temperature uniform unanimity of crucible bottom, the smooth supreme uneven phenomenon down of solid-liquid interface, increased the casting polycrystalline silicon grain-size, reduce crystal boundary density, and then improved the silion cell photoelectric conversion rate.
Description of drawings
Fig. 1 is the Facad structure figure of radially spreader plate of the present utility model;
Fig. 2 is the A-A sectional view of Fig. 1;
Fig. 3 is the upward view of Fig. 1;
Fig. 4 is the structure sectional view of heat exchanger plate;
Fig. 5 is the upward view of Fig. 4;
Fig. 6 is the A portion enlarged view of Fig. 5;
Fig. 7 is heat exchanger plate and the assembling explosive view of spreader plate radially;
Fig. 8 be radially spreader plate with the shunting substrate the assembling explosive view;
Fig. 9 is the structure sectional view of the circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace of the present utility model;
Figure 10 is the turnover gas layout sectional view of the heat exchange platform among the embodiment;
Figure 11 is the turnover gas layout sectional view of heat exchange platform in lower furnace body among the embodiment.
Embodiment
Content of the present utility model is easier to be expressly understood in order to make, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail below,
Shown in Fig. 1 ~ 9, a kind of circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace, comprise heat exchanger plate 10, radially spreader plate 20 and shunting substrate 30, radially fixedly connected with heat exchanger plate 10 in the top of spreader plate 20, radially fixedly connected with shunting substrate 30 in the bottom of spreader plate 20, have the air channel of arranging to outside radial with the center 11 in the bottom of heat exchanger plate 10, radially have a plurality of perforations on the spreader plate 20 and shunting pore 21 that be the array-like distribution, this shunting pore 21 is communicated with air channel 11, and the cross-sectional area of a plurality of shunting pores 21 is in the radially increase gradually in the radial direction of spreader plate 20, the middle part of shunting substrate 30 is provided with air inlet port 31, heat exchanger plate 10 and radially be provided with the air flue that confluxes of sealing between the spreader plate 20, radially be provided with outlet passageway and diffluence room 40 between spreader plate 20 and the shunting substrate 30, this diffluence room 40 is communicated with air inlet port 31 and shunting pore 21 respectively, and air channel 11 is communicated with outlet passageway by the air flue that confluxes.Heat exchanger plate 10 is connected and fixed with radially pasting mutually with set screw 41 between the spreader plate 20.Radially paste mutually with set screw 42 between spreader plate 20 and the shunting substrate 30 and be connected and fixed.
Shown in Fig. 1,5,6, the air flue that confluxes is made up of the following collecting tray 22 of driving on the heat exchanger plate 10 collecting tray 12 and open on spreader plate 20 radially, and on collecting tray 12 corresponding with following collecting tray 22.
As shown in figure 10, outlet passageway is by opening on spreader plate 20 outsides radially production well 23 and opening at the lower production well 32 of shunting substrate 30 outsides and forms, last production well 23 and lower production well 32 connections.
As shown in Figure 3, shunting pore 21 radially can arranged by following mode on the spreader plate 20: the quantity of middle shunting pore 21 is one, and cross-sectional area is expressed as Sa; Quantity to periphery first row's shunting pore 21 is four, and cross-sectional area is represented Sb=Sb1+Sb2+Sb3+Sb4; Quantity to periphery second row's shunting pore 21 is eight, and cross-sectional area is represented Sc=Sc1+Sc2+Sc3+Sc4+Sc5+Sc6+Sc7+Sc8; Quantity to periphery the 3rd row's shunting pore 21 is 12, cross-sectional area is represented Sd=Sd1+Sd2+Sd3+Sd4+Sd5+Sd6+Sd7+Sd8+Sd9+Sd10+Sd11+Sd12, the cross-sectional area magnitude relationship is followed following principle: Sa＜Sb＜Sc＜Sd, cross-sectional area Sa, Sb, Sc, Sd are undertaken area matched by the casting ingot process effect, so just meet the cross-sectional area of a plurality of shunting pores 21 in the radially requirement that increases gradually in the radial direction of spreader plate 20.
Figure 10 and Figure 11 are the schematic layout patterns of input and output gas, all parts all are graphite piece among Figure 10, comprise central air induction pipe 43, four four jiaos of escape pipes 44, heat-insulation cage base plate 50, polycrystalline furnace lower furnace body 45, lower furnace body external feed stream pipe 49, the inner escape pipe 47 of lower furnace body, the outside escape pipe 48 of lower furnace body among Figure 11, place crucible 46 above the heat exchange platform of the present utility model, in long brilliant process, 46 li silicon liquid of crucible are long brilliant one-tenth silicon crystal progressively.
As shown in figure 10, heat exchange platform of the present utility model flows into cold air (argon gas or helium) by central air induction pipe 43, and cold air flows out through diffluence room 40 → shunting pore 21 → 24 → four jiaos of escape pipes of air flue 44 that conflux.
As shown in figure 11, the turnover gas layout sectional view of heat exchange platform in lower furnace body 45, cold air flows into central air induction pipe 43 through lower furnace body external feed stream pipe 49, cold air is carrying out becoming hot gas after the heat exchange with heat exchanger plate 10, hot gas is through four jiaos of escape pipes 44, through the inner escape pipe 47 of lower furnace body, flow to the outside escape pipe 48 of lower furnace body, hot gas carries out cooling process in the outside of lower furnace body 45.Shown in Figure 11, place crucible 46 on the heat exchanger plate 10, central air induction pipe 43 and four jiaos of escape pipes 44 all pass heat-insulation cage base plate 50.In long brilliant process, the silicon liquid thermal exchange that 10 pairs of crucibles of heat exchanger plate are 46 li is cooled off long brilliant.Because the circumference distribution radially of shunting pore 21, cross-sectional area Sa＜Sb＜Sc＜the Sd of the shunting pore 21 of mind-set periphery therefrom, it is big by the even change around the middle mind-set to have formed airshed, thereby has adapted to height and center low inhomogeneous feature around the bottom temp of polycrystalline ingot casting.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (4)
1. circumference radial mode heat exchange platform that is used for polycrystalline silicon ingot or purifying furnace, comprise heat exchanger plate (10), radially spreader plate (20) and the shunting substrate (30), radially fixedly connected with heat exchanger plate (10) in the top of spreader plate (20), radially fixedly connected with shunting substrate (30) in the bottom of spreader plate (20), it is characterized in that: have the air channel of arranging to outside radial with the center (11) in the bottom of heat exchanger plate (10), radially have a plurality of perforations on the spreader plate (20) and shunting pore (21) that be the array-like distribution, this shunting pore (21) is communicated with air channel (11), and the cross-sectional area of a plurality of shunting pores (21) is in the radially increase gradually in the radial direction of spreader plate (20), the middle part of shunting substrate (30) is provided with air inlet port (31), heat exchanger plate (10) and radially be provided with the air flue that confluxes of sealing between the spreader plate (20), radially be provided with outlet passageway and diffluence room (40) between spreader plate (20) and the shunting substrate (30), this diffluence room (40) is communicated with air inlet port (31) and shunting pore (21) respectively, and air channel (11) is communicated with outlet passageway by the air flue that confluxes.
2. the circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that: the described air flue that confluxes is formed by opening at the last collecting tray (12) on the heat exchanger plate (10) and the following collecting tray (22) opened on spreader plate (20) radially, and it is corresponding with following collecting tray (22) to go up collecting tray (12).
3. the circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace according to claim 1 and 2, it is characterized in that: described outlet passageway is by opening at outside the last production well (23) of spreader plate (20) radially and opening at the lower production well (32) of shunting substrate (30) outside and form, last production well (23) and lower production well (32) connection.
4. the circumference radial mode heat exchange platform for polycrystalline silicon ingot or purifying furnace according to claim 1 is characterized in that: described heat exchanger plate (10), radially spreader plate (20) and shunting substrate (30) are made by graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320038975 CN203049077U (en) | 2013-01-25 | 2013-01-25 | Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320038975 CN203049077U (en) | 2013-01-25 | 2013-01-25 | Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203049077U true CN203049077U (en) | 2013-07-10 |
Family
ID=48732054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320038975 Expired - Lifetime CN203049077U (en) | 2013-01-25 | 2013-01-25 | Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203049077U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726933A (en) * | 2013-12-20 | 2015-06-24 | 昆山中辰矽晶有限公司 | Cooling device for crystal casting furnace and crystal casting method |
| CN107236988A (en) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | A kind of polycrystalline air cooling silicon ingot furnace |
| CN108950681A (en) * | 2017-05-27 | 2018-12-07 | 镇江仁德新能源科技有限公司 | The graphite chassis and polycrystalline ingot furnace of polycrystalline ingot furnace |
| CN110364827A (en) * | 2019-08-01 | 2019-10-22 | 武汉虹信通信技术有限责任公司 | Radiate power-devided circuit plate and large scale array antenna |
-
2013
- 2013-01-25 CN CN 201320038975 patent/CN203049077U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726933A (en) * | 2013-12-20 | 2015-06-24 | 昆山中辰矽晶有限公司 | Cooling device for crystal casting furnace and crystal casting method |
| CN108950681A (en) * | 2017-05-27 | 2018-12-07 | 镇江仁德新能源科技有限公司 | The graphite chassis and polycrystalline ingot furnace of polycrystalline ingot furnace |
| CN108950681B (en) * | 2017-05-27 | 2020-12-15 | 镇江仁德新能源科技有限公司 | Graphite chassis of polycrystal ingot furnace and polycrystal ingot furnace |
| CN107236988A (en) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | A kind of polycrystalline air cooling silicon ingot furnace |
| CN110364827A (en) * | 2019-08-01 | 2019-10-22 | 武汉虹信通信技术有限责任公司 | Radiate power-devided circuit plate and large scale array antenna |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102234837B (en) | Closed cooling system of gas cooled polysilicon ingot furnace | |
| CN203049077U (en) | Circumference radial-type heat exchange platform for polycrystalline silicon ingot furnace | |
| CN102268728B (en) | Heat exchange platform of improved structure for polycrystalline silicon ingot furnace | |
| CN103590103B (en) | A kind of polycrystalline silicon ingot or purifying furnace argon gas flow guide system and method for river diversion thereof | |
| CN207097785U (en) | It is a kind of to seal the uniform spray photovoltaic silicon wafer quartz diffusion furnace strengthened | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN206362214U (en) | A kind of cooling device for being used to produce microbiological compound fertilizer | |
| CN202272988U (en) | Closed cooling system of air refrigeration polycrystalline silicon ingot furnace | |
| CN207062135U (en) | A kind of float glass annealing kiln edge heat riser | |
| CN205403462U (en) | A cooling device and system for soft magnetic ferrite sintering high -temperature gas | |
| CN202247004U (en) | Heat exchange platform with improved structure for polycrystalline silicon ingot furnace | |
| CN102747420B (en) | Heat exchange table for polycrystalline ingot furnace and ventilation pipe diameter variation method of heat exchange table | |
| CN207165529U (en) | A kind of photovoltaic silicon wafer quartz diffusion furnace uniformly spread | |
| CN205711039U (en) | A kind of thermal field structure of polycrystalline silicon casting furnace of lower exhaust | |
| CN206783818U (en) | A kind of single crystal growing furnace turnover panel water-cooling structure | |
| CN209162250U (en) | Polycrystalline silicon ingot casting energy saving furnace | |
| CN207091552U (en) | A kind of more temperature measuring areas are heat-insulated to strengthen photovoltaic silicon wafer quartz diffusion furnace | |
| CN207091559U (en) | A kind of photovoltaic silicon wafer quartz diffusion furnace of heat-insulated reinforcement | |
| CN207091560U (en) | A kind of photovoltaic silicon wafer quartz diffusion furnace with more temperature measuring areas | |
| CN207672152U (en) | A kind of big kilogram of sapphire crystal growth water-cooling apparatus | |
| CN209082035U (en) | Reduce the polycrystalline silicon ingot or purifying furnace of high-purity argon gas usage amount | |
| CN102453959A (en) | Flow guiding apparatus for crystal growth furnace | |
| CN109097830A (en) | Polycrystalline silicon ingot casting energy saving furnace | |
| CN208023108U (en) | A kind of polycrystalline silicon ingot or purifying furnace | |
| CN206477051U (en) | Auxiliary chamber of single crystal furnace increases part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130710 |