CN102233544B - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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Abstract
The invention provides a chemical mechanical polishing method which comprises the following steps of: providing a polishing base and wafers; performing first polishing on the (N+4)th wafer by using a first polishing pad and a first polishing parameter, simultaneously performing first polishing on the (N+3)th wafer by using a second polishing pad and the first polishing parameter, and simultaneously performing second polishing on the (N+2)th wafer by using a third polishing pad and a second polishing parameter; and performing first polishing on the (N+5)th wafer by using the first polishing pad and the first polishing parameter, and simultaneously performing second polishing on the (N+4)th wafer by using the second polishing pad and the second polishing parameter, and simultaneously performing second polishing on the (N+3)th wafer by using the third polishing pad and the second polishing parameter, wherein N is a natural number. By the method, the production efficiency of the chemical mechanical polishing base is increased.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method of cmp.
Background technology
In semiconductor was made, cmp (CMP) was a kind of method that rete is carried out planarization commonly used.For example, in the processing procedure of damascene structure, plated metal copper on opening neutralization medium layer, and carry out planarization by cmp, and remove the copper on the described dielectric layer, in opening, form copper interconnecting line.In addition, in other the processing procedure, for example CMP commonly used carries out planarization to silicon nitride layer in the manufacturing of STI (shallow channel isolation area).
Publication number is in the Chinese patent application document of CN1931518A, discloses a kind of cmp base station, as shown in Figure 1, comprising abrasive disk 5, have 3 grinding pads on the abrasive disk 5, the 1st grinding pad 10, the 2nd grinding pad 20, the 3 grinding pads 30 and wafer (wafer) crawl platform 40.Correspondence has mechanical arm 50 respectively above 3 grinding pads and wafer grabbing platform 40.
In the conventional method, at first, the abrasive parameters of the 1st grinding pad is set to the 1st abrasive parameters, and the 1st step ground and adopts the 1st abrasive parameters, and the abrasive parameters of the 2nd grinding pad is set to the 2nd abrasive parameters, and the 2nd step ground and adopts the 2nd abrasive parameters.Then, the 1st wafer will be picked up (load wafer) by the mechanical arm of its top through wafer grabbing platform 40, then 4 mechanical arms 50 are simultaneously according to 90 ° of same direction rotations, relatively the mechanical arm of its top is in half-twist round about for abrasive disk, and the 1st wafer is placed on the 1st grinding pad 10 and grinds.
Then after grinding end, the 1st wafer is picked up by the mechanical arm of its top, and the 2nd wafer is picked up by the mechanical arm of its top through wafer grabbing platform 40 simultaneously.4 mechanical arms 50 are simultaneously according to 90 ° of same direction rotations, and the 1st wafer is placed on the 2nd grinding pad 20 and grinds, and the 2nd wafer is placed on the 1st grinding pad 10 and grinds simultaneously, and the 3rd wafer is picked up through wafer grabbing platform 40.
Then after grinding end, the 1st wafer and the 2nd wafer are picked up by the mechanical arm of its top respectively, and the 3rd wafer is picked up by the mechanical arm of its top through the wafer grabbing platform simultaneously.4 mechanical arms 50 are simultaneously according to 90 ° of same direction rotations, the 1st wafer is placed on the 3rd grinding pad 30 and does not grind, the 2nd wafer is placed on the 2nd grinding pad 20 and grinds simultaneously, and the 3rd wafer is placed on the 1st grinding pad 10 and grinds.
Then after grinding end, the 1st wafer, the 2nd wafer and the 3rd wafer are picked up by the mechanical arm of its top respectively, and the 4th wafer is picked up by the mechanical arm of its top through wafer grabbing platform 40 simultaneously.4 mechanical arms 50 are simultaneously according to 90 ° of same direction rotations, the 1st wafer is taken back to wafer grabbing platform 40, and (grinding of the 1st wafer finishes, can be removed), the 2nd wafer is placed on the 3rd grinding pad 30 and does not grind, the 3rd wafer is placed on the 2nd grinding pad 20 and grinds simultaneously, and the 4th wafer is placed on the 1st grinding pad 10 and grinds.
Chemical and mechanical grinding method grasps wafers through the 1st grinding head 10, the 2 grinding heads 20, the 3 grinding heads 30 from wafer grabbing platform 40 successively, is put back into again at last the wafer grabbing platform, moves in circles like this.The existing production model of CMP may be summarized to be: rotation-grind-rotation-grind-rotation-grind ...
In a lot of grinding processing procedures of CMP, the 3rd grinding pad 30 does not grind, wafer is just successively through the 1st grinding pad 10 and the 2nd grinding pad 20 like this, finishing respectively the grinding of the 1st step and the 2nd step grinds, if grinding time spent 60s by the 1st step grinding time spent 60s and the 2nd step calculates, that every batch 25 of product just needs 60s * 25=1500s, if allow the 3rd grinding head 30 to participate in grinding (for example the 2nd step ground and utilizes the 2nd grinding head and the 3rd grinding head jointly to finish), wafer still will be successively through the 1st grinding head and the 2nd grinding head, therefore the time of every batch of product needed still equals " milling time of 1 grinding pad that the time spent is the longest " * 25, so production efficiency can not be improved.
In semiconductor manufacture flow path, CMP technique is applied to a lot of steps, therefore optimizes the service efficiency of CMP board, and improving production capacity has important meaning.
Summary of the invention
The technical problem that the present invention solves is to improve the production efficiency of cmp base station.
In order to address the above problem, the invention provides a kind of method of cmp, comprising:
Provide and grind base station and wafer, described grinding base station comprises abrasive disk, be positioned on the abrasive disk, and evenly distributed the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and wafer grabbing platform successively on take the center of abrasive disk as the circumference in the center of circle; Described wafer comprises the M sheet, and the described wafer after arranging is the 1st, the 2nd according to the successively layout that puts in order ... the M sheet;
Also comprise step:
Making the 1st grinding pad utilize the 1st abrasive parameters that the N+4 wafer was carried out for the 1st step grinds, make simultaneously the 2nd grinding pad utilize the 1st abrasive parameters that the N+3 wafer was carried out for the 1st step and grind, make simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+2 wafer was carried out for the 2nd step and grind;
Making the 1st grinding pad utilize the 1st abrasive parameters that the N+5 wafer was carried out for the 1st step grinds, making simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the N+4 wafer was carried out for the 2nd step grinds, making simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+3 wafer was carried out for the 2nd step grinds, wherein M and N are natural number, and N＜M.
Preferably, there is mechanical arm described the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and wafer grabbing platform top respectively correspondence, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out the 1st step grinding steps, and described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+5 wafer is carried out also comprising between the 1st step grinding steps: 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations.
Preferably, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out also comprising before the 1st step grinding steps:
Making the 1st grinding pad utilize the 1st abrasive parameters that the 1st wafer was carried out for the 1st step grinds;
Make the 2nd grinding pad utilize the 2nd abrasive parameters that the 1st wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 2nd wafer was carried out for the 1st step and grind;
Make the 2nd grinding pad utilize the 2nd abrasive parameters that the 2nd wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 3rd wafer was carried out for the 1st step and grind.
Preferably, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the 1st wafer is carried out the 1st step grinding steps, and described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out also comprising between the grinding of the 2nd step that 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations;
Described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out the 2nd step grinding steps, and described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 2nd wafer is carried out also comprising between the 2nd step grinding steps that 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations.
Preferably, described 4 described mechanical arms also comprise before the abrasive disk central rotation step in the same direction and utilize mechanical arm that the wafer on the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and the wafer grabbing platform of its correspondence is picked up.
Preferably,, described 4 described mechanical arms also comprise after the abrasive disk central rotation step in the same direction and utilize mechanical arm that the wafer of its crawl is placed on the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and the wafer grabbing platform of its correspondence.
Preferably, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out also comprising before the 1st step grinding steps:
Make the 2nd grinding pad utilize the 1st abrasive parameters that the 1st wafer was carried out for the 1st step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 2nd wafer was carried out for the 1st step and grind;
Making the 3rd grinding pad utilize the 2nd abrasive parameters that the 1st wafer was carried out for the 2nd step grinds, make simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the 2nd wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 3rd wafer was carried out for the 1st step and grind.
Preferably, described the 2nd grinding pad that makes utilizes the 1st abrasive parameters that the 1st wafer is carried out the 1st step grinding steps, and described the 3rd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out also comprising between the 2nd step grinding steps 4 described mechanical arms in the same direction around abrasive disk central rotation 180 degree.
Compared with prior art, the present invention mainly has the following advantages:
The present invention utilizes the 1st grinding pad that the N+4 wafer was carried out for the 1st step and grinds, and while the 2nd grinding pad carried out for the 1st step to the N+3 wafer and grinds, and the 3rd grinding pad carries out the grinding of the 2nd step to the N+2 wafer simultaneously; Then the 1st grinding pad carries out the grinding of the 1st step to the N+5 wafer, the 2nd grinding pad carries out the grinding of the 2nd step to the N+4 wafer simultaneously, the 3rd grinding pad carries out the grinding of the 2nd step to the N+3 wafer simultaneously, namely: the course of work of rotation-grinding-rotation-grind-rotation-rotation-grinding-rotation-grind-rotation-rotation-grinding, so that can carrying out for the 1st step simultaneously, N+4 sheet and N+3 wafer grind, then carrying out simultaneously for the 2nd step grinds, thereby improved greatly operating efficiency, in to the test of embodiment, find the grinding of per 2 wafer in the repetitive cycling process of lapping after the step that embodiment mentions, just can save the time that 1 wafer is ground, for example 60s, so entire block goes out ETCD estimated time of commencing discharging and can reduce near 40%.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is a kind of schematic diagram of existing cmp base station;
Fig. 2 is the flow chart of chemical and mechanical grinding method of the present invention;
Fig. 3 to Fig. 8 is the schematic diagram of chemical and mechanical grinding method of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; ratio was done local the amplification as the profile of expression device architecture can disobey 1, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The 3 dimension space sizes that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 2 is the flow chart of chemical and mechanical grinding method of the present invention, and Fig. 3 to Fig. 8 is the schematic diagram of chemical and mechanical grinding method of the present invention.As shown in Figure 2, chemical and mechanical grinding method of the present invention comprises step:
S10: provide and grind base station and wafer, described grinding base station comprises abrasive disk, is positioned on the abrasive disk, and evenly distributed the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and wafer grabbing platform successively on take the center of abrasive disk as the circumference in the center of circle; Described wafer comprises the M sheet, and the described wafer after arranging is the 1st, the 2nd according to the successively layout that puts in order ... the M sheet.
As shown in Figure 3, cmp base station of the present invention comprises abrasive disk 100, have 3 grinding pads on the abrasive disk 100, the 1st grinding pad 110, the 2 grinding pads 120, the 3rd grinding pad 130 and wafer (wafer) crawl platform 140, counterclockwise arrangement as shown in Figure 3.Correspondence has mechanical arm 150 respectively above 3 grinding pads and wafer grabbing platform 140.Described mechanical arm 150 is used for the crawl wafer, then places it on the 1st grinding pad 110, the 2 grinding pads, 120, the 3 grinding pads 130 or wafer (wafer) the crawl platform 140.Wafer grabbing platform 140 is used for sending into wafer and wafer is exported from grinding base station in the grinding base station.
The inventor finds under study for action, with reference to figure 1, traditional chemical and mechanical grinding method, successively from wafer grabbing platform crawl wafer through the 1st grinding head 10, the 2 grinding heads 20, the 3 grinding heads 30, be put back into again at last the wafer grabbing platform, move in circles like this.Wherein, the 3rd grinding pad 30 does not grind usually, wafer is just successively through the 1st grinding pad 10 and the 2nd grinding pad 20 like this, finishing respectively the grinding of the 1st step and the 2nd step grinds, if grinding time spent 60s by the 1st step grinding time spent 60s and the 2nd step calculates, that every batch 25 of product just needs 60s * 25=1500s, if allow the 3rd grinding head 30 to participate in grinding, wafer still will be successively through the 1st grinding head and the 2nd grinding head, therefore the time of every batch of product needed still equals " milling time of 1 grinding pad that the time spent is the longest " * 25, so production efficiency can not be improved.
In the present embodiment, between step S10 and S20, also comprise: concrete with reference to figure 3, the 1st wafer 210 is picked up from wafer grabbing platform 140; Then, with 4 mechanical arms 150 around the center of abrasive disk 100 half-twist in the counterclockwise direction, the 1st wafer 210 is placed on the 1st grinding pad 110, utilize the 1st abrasive parameters to carry out for the 1st step and grind, the silicon nitride layer after for example STI being filled grinds removes suprabasil silicon nitride layer.After grinding finishes through 60s, the 1st wafer 210 is picked up from the 1st grinding pad 110, the 2nd wafer 220 is picked up from wafer grabbing platform 140.
Then, as shown in Figure 4, with 4 mechanical arms 150 around the center of abrasive disk 100 half-twist in the counterclockwise direction, the 1st wafer 210 is placed on utilizes the 2nd abrasive parameters to carry out for the 2nd step on the 2nd grinding pad 120 to grind, for example continue the silicon nitride layer after the STI filling is ground, remove simultaneously the barrier layer in the substrate, the 2nd wafer 210 is placed on utilizes the 1st abrasive parameters to carry out the grinding of the 1st step on the 1st grinding pad 110.
Then, after grinding finishes through 60s, the 1st wafer 210 is picked up from the 2nd grinding pad 120, the 2nd wafer 210 is picked up from the 1st grinding pad 110, and the 3rd wafer 230 is picked up from wafer grabbing platform 140.
Then, as shown in Figure 5,4 mechanical arms 150 are half-twist in the counterclockwise direction around the center of abrasive disk 100, the 1st wafer 210 is placed on the 3rd grinding pad 230, do not grind, the 2nd wafer 220 is placed on utilizes the 2nd abrasive parameters to carry out the grinding of the 2nd step on the 2nd grinding pad 120, the 3rd wafer 230 is placed on utilizes the 1st abrasive parameters to carry out the grinding of the 1st step on the 1st grinding pad 110, the 4th wafer is placed on the wafer grabbing platform 140.
Then, as shown in Figure 6, after grinding finishes through 60s, the 1st wafer 210 is picked up from the 3rd grinding pad 130, the 2nd wafer 220 is picked up from the 2nd grinding pad 120, and the 3rd wafer 230 is picked up from the 1st grinding pad 110, and the 4th wafer 240 is picked up from wafer grabbing platform 140.
Then, 4 mechanical arms 150 center on the center of abrasive disk 100 in the counterclockwise direction with abrasive disk 100 half-twists, the 1st wafer 210 is placed on the wafer grabbing platform 140, and take out, the 2nd wafer 220 is placed on the 3rd grinding pad 130, do not grind, the 3rd wafer 230 is placed on the 2nd grinding pad 120, does not grind, and the 4th wafer 240 is placed on the 1st grinding pad 110, do not grind, the 5th wafer 250 is placed on the wafer grabbing platform 140.Then, the 2nd wafer 220 is picked up from the 3rd grinding pad 130, the 3rd wafer 230 is picked up from the 2nd grinding pad 120, picks up on the 4th wafer 240 the 1st grinding pad 110, picks up from wafer grabbing platform 140 from the 5th wafer 250.
S20: make the 1st grinding pad utilize the 1st abrasive parameters that the N+4 wafer was carried out for the 1st step and grind, make simultaneously the 2nd grinding pad utilize the 1st abrasive parameters that the N+3 wafer was carried out for the 1st step and grind, make simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+2 wafer was carried out for the 2nd step and grind.
Continuation is with reference to figure 6, for example N equals 1, then continue half-twist, the 2nd wafer 220 is placed on the wafer grabbing platform 140, and take out, the 3rd wafer 230 is placed on utilizes the 2nd abrasive parameters to carry out for the 2nd step on the 3rd grinding pad 230 to grind, the 4th wafer 220 is placed on utilizes the 1st abrasive parameters to carry out the grinding of the 1st step on the 2nd grinding pad 120, the 5th wafer 250 is placed on utilizes the 1st abrasive parameters to carry out the grinding of the 1st step on the 1st grinding pad 110, the 6th wafer is placed on the wafer grabbing platform 140.
S30: make the 1st grinding pad utilize the 1st abrasive parameters that the N+5 wafer was carried out for the 1st step and grind, making simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the N+4 wafer was carried out for the 2nd step grinds, making simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+3 wafer was carried out for the 2nd step grinds, wherein M and N are natural number, and N＜M.
In the present embodiment, for example N equals 1, and is concrete with reference to figure 7, the 3rd wafer 230 is picked up from the 3rd grinding pad 130, the 4th wafer 240 is picked up from the 2nd grinding pad 120, picks up on the 5th wafer 250 the 1st grinding pad 110, picks up from wafer grabbing platform 140 from the 6th wafer 260.
4 described mechanical arms are placed the 3rd wafer 230 on the wafer grabbing platform 140, and are taken out in the counterclockwise direction around 90 ° of abrasive disk central rotations, and the 4th wafer 240 is placed on the 3rd grinding pad 130, utilize the 2nd abrasive parameters to carry out for the 2nd step and grind.The 5th wafer 250 is placed on the 2nd grinding pad 120, utilizing the 2nd abrasive parameters to carry out for the 2nd step grinds, the 6th wafer 260 is placed on the 1st grinding pad 110, utilizes the 1st abrasive parameters to carry out for the 1st step and grinds, and the 7th wafer 270 is placed on the wafer grabbing platform 140.
Preferably, also comprise 4 described mechanical arms in the same direction around 180 ° of abrasive disk central rotations, then above-mentioned steps S20 and S30 are carried out in circulation successively.
For example: with reference to figure 8, then, after grinding finishes through 60s, 4 described mechanical arms are in the counterclockwise direction around 90 ° of abrasive disk central rotations, the 4th wafer 240 is placed on the wafer grabbing platform 140, and take out, the 5th wafer 250 is placed on the 3rd grinding pad 130, do not grind, the 6th wafer 260 is placed on the 2nd grinding pad 120, does not grind, and the 7th wafer 270 is placed on the 1st grinding pad 110, do not grind, the 8th wafer 280 is placed on the wafer grabbing platform 140.Then, the 5th wafer 250 is picked up from the 3rd grinding pad 130, and the 6th wafer 260 is picked up from the 2nd grinding pad 120, picks up on the 7th wafer 270 the 1st grinding pad 110, and the 8th wafer 280 is picked up from wafer grabbing platform 140.Then, 4 described mechanical arms are in the counterclockwise direction around 90 ° of abrasive disk central rotations, the 5th wafer 250 is placed on the wafer grabbing platform 140, and take out (after also can again the 4th wafer 240 being taken out, continue half-twist, just the 5th wafer 250 is taken out), the 6th wafer 260 is placed on the 3rd grinding pad 130, utilizing the 2nd abrasive parameters to carry out for the 2nd step grinds, the 7th wafer 270 is placed on the 2nd grinding pad 120, utilizes the 2nd abrasive parameters to carry out for the 2nd step and grinds, and the 8th wafer 280 is placed on the 1st grinding pad 110, utilize the 1st abrasive parameters to carry out for the 1st step and grind, the 9th wafer is placed on the wafer grabbing platform 140.
In another embodiment, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out also comprising before the 1st step grinding steps:
Make the 2nd grinding pad utilize the 1st abrasive parameters that the 1st wafer was carried out for the 1st step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 2nd wafer was carried out for the 1st step and grind;
Making the 3rd grinding pad utilize the 2nd abrasive parameters that the 1st wafer was carried out for the 2nd step grinds, make simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the 2nd wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 3rd wafer was carried out for the 1st step and grind.
Wherein, described the 2nd grinding pad that makes utilizes the 1st abrasive parameters that the 1st wafer is carried out the 1st step grinding steps, and described the 3rd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out also comprising between the 2nd step grinding steps 4 described mechanical arms in the same direction around abrasive disk central rotation 180 degree.
For example, N equals 1, can comprise between step S10 and the S20:
The 1st wafer 210 is picked up from wafer grabbing platform 140; Then, 4 described mechanical arms are in the counterclockwise direction around 90 ° of abrasive disk central rotations.Then, the 2nd wafer 220 is grabbed on the wafer grabbing platform 140, and then with abrasive disk 100 half-twists.
Then, the 1st wafer 210 is placed on carried out for the 1st step on the 2nd grinding pad 120 and grind, simultaneously, the 2nd wafer 210 is placed on carried out for the 1st step and grinds on the 1st grinding pad 110.
After grinding finishes through 60s, the 1st wafer 210 is picked up from the 2nd grinding pad 120, the 2nd wafer 220 is picked up from the 1st grinding pad 110, and the 3rd wafer 230 is picked up from wafer grabbing platform 140.
Then, 4 described mechanical arms are centered on 90 ° of abrasive disk central rotations in the counterclockwise direction, the 1st wafer 210 is placed on carried out for the 2nd step on the 3rd grinding pad 130 and grind, simultaneously, the 2nd wafer 220 is placed on carries out the grinding of the 2nd step on the 2nd grinding pad 120, the 3rd wafer 230 is placed on and carries out the grinding of the 1st step on the 1st grinding pad 110 simultaneously, and the 4th wafer is placed on the wafer grabbing platform.
Then, after grinding finishes through 60s, the 1st wafer 210 is picked up from the 3rd grinding pad 130, the 2nd wafer 210 is picked up from the 2nd grinding pad 120, and the 3rd wafer 230 is picked up from the 1st grinding pad 110, and the 4th wafer is picked up from the wafer grabbing platform.
Then, 4 described mechanical arms are centered on 90 ° of abrasive disk central rotations in the counterclockwise direction, the 1st wafer 210 is placed on the wafer grabbing platform 140, and takes out, the 2nd wafer 220 is placed on the 3rd grinding pad 130, do not grind, the 3rd wafer 230 is placed on the 2nd grinding pad 120, does not grind, and the 4th wafer 240 is placed on the 1st grinding pad 110, do not grind, and the 5th wafer 250 is placed on the wafer grabbing platform 140.
Then, 4 described mechanical arms are in the counterclockwise direction around 90 ° of abrasive disk central rotations, and the 2nd wafer 220 is placed on the wafer grabbing platform 140, and takes out.
The present invention utilizes the 1st grinding pad that the N+4 wafer was carried out for the 1st step and grinds, and while the 2nd grinding pad carried out for the 1st step to the N+3 wafer and grinds, and the 3rd grinding pad carries out the grinding of the 2nd step to the N+2 wafer simultaneously; Then the 1st grinding pad carries out the grinding of the 1st step to the N+5 wafer, the 2nd grinding pad carries out the grinding of the 2nd step to the N+4 wafer simultaneously, the 3rd grinding pad carries out the grinding of the 2nd step to the N+3 wafer simultaneously, namely: the course of work of rotation-grinding-rotation-grind-rotation-rotation-grinding-rotation-grind-rotation-rotation-grinding, so that can carrying out for the 1st step simultaneously, N+4 sheet and N+3 wafer grind, then carrying out simultaneously for the 2nd step grinds, thereby improved greatly operating efficiency, in to the test of embodiment, find the grinding of per 2 wafer in the repetitive cycling process of lapping after the step that embodiment mentions, just can save the time that 1 wafer is ground, for example 60s, so entire block goes out ETCD estimated time of commencing discharging and can reduce near 40%.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (7)
1. the method for a cmp comprises:
Provide and grind base station and wafer, described grinding base station comprises abrasive disk, be positioned on the abrasive disk, and evenly distributed the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and wafer grabbing platform successively on take the center of abrasive disk as the circumference in the center of circle, there is mechanical arm described the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and wafer grabbing platform top respectively correspondence; Described wafer comprises the M sheet, and the described wafer after arranging is the 1st, the 2nd according to the successively layout that puts in order ... the M sheet;
It is characterized in that, also comprise step:
Making the 1st grinding pad utilize the 1st abrasive parameters that the N+4 wafer was carried out for the 1st step grinds, make simultaneously the 2nd grinding pad utilize the 1st abrasive parameters that the N+3 wafer was carried out for the 1st step and grind, make simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+2 wafer was carried out for the 2nd step and grind;
Making the 1st grinding pad utilize the 1st abrasive parameters that the N+5 wafer was carried out for the 1st step grinds, making simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the N+4 wafer was carried out for the 2nd step grinds, making simultaneously the 3rd grinding pad utilize the 2nd abrasive parameters that the N+3 wafer was carried out for the 2nd step grinds, wherein M and N are natural number, and N＜M, wherein said the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out the 1st step grinding steps, and described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+5 wafer is carried out also comprising between the 1st step grinding steps: 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations.
2. the method for cmp according to claim 1 is characterized in that, described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out also comprising before the 1st step grinding steps:
Making the 1st grinding pad utilize the 1st abrasive parameters that the 1st wafer was carried out for the 1st step grinds;
Make the 2nd grinding pad utilize the 2nd abrasive parameters that the 1st wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 2nd wafer was carried out for the 1st step and grind;
Make the 2nd grinding pad utilize the 2nd abrasive parameters that the 2nd wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 3rd wafer was carried out for the 1st step and grind.
3. the method for cmp according to claim 2 is characterized in that,
Described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the 1st wafer is carried out the 1st step grinding steps, and described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out also comprising between the grinding of the 2nd step that 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations;
Described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out the 2nd step grinding steps, and described the 2nd grinding pad that makes utilizes the 2nd abrasive parameters that the 2nd wafer is carried out also comprising between the 2nd step grinding steps that 4 described mechanical arms are in the same direction around 90 ° of abrasive disk central rotations.
4. according to claim 1 or the method for 3 described cmps, it is characterized in that, make the 1st grinding pad utilize the 1st abrasive parameters that the N+5 wafer is carried out comprising that also 4 described mechanical arms are in the same direction around 180 ° of abrasive disk central rotations after the 1st step grinding steps.
5. the method for cmp according to claim 4, it is characterized in that, 4 described mechanical arms also comprise after the abrasive disk central rotation step in the same direction and utilize mechanical arm that the wafer of its crawl is placed on the 1st grinding pad, the 2nd grinding pad, the 3rd grinding pad and the wafer grabbing platform of its correspondence.
6. the method for cmp according to claim 1 is characterized in that,
Described the 1st grinding pad that makes utilizes the 1st abrasive parameters that the N+4 wafer is carried out also comprising before the 1st step grinding steps:
Make the 2nd grinding pad utilize the 1st abrasive parameters that the 1st wafer was carried out for the 1st step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 2nd wafer was carried out for the 1st step and grind;
Making the 3rd grinding pad utilize the 2nd abrasive parameters that the 1st wafer was carried out for the 2nd step grinds, make simultaneously the 2nd grinding pad utilize the 2nd abrasive parameters that the 2nd wafer was carried out for the 2nd step and grind, make simultaneously the 1st grinding pad utilize the 1st abrasive parameters that the 3rd wafer was carried out for the 1st step and grind.
7. the method for cmp according to claim 6 is characterized in that,
Described the 2nd grinding pad that makes utilizes the 1st abrasive parameters that the 1st wafer is carried out the 1st step grinding steps, and described the 3rd grinding pad that makes utilizes the 2nd abrasive parameters that the 1st wafer is carried out also comprising between the 2nd step grinding steps 4 described mechanical arms in the same direction around abrasive disk central rotation 180 degree.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1661780A (en) * | 2004-02-27 | 2005-08-31 | 台湾积体电路制造股份有限公司 | CMP apparatus and polishing method |
| CN1787179A (en) * | 2004-12-08 | 2006-06-14 | 上海华虹Nec电子有限公司 | Method for enhancing using efficiency of CMP equipment |
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| CN1272222A (en) * | 1997-08-21 | 2000-11-01 | Memc电子材料有限公司 | Method of processing semiconductor wafers |
| KR100434189B1 (en) * | 2002-03-21 | 2004-06-04 | 삼성전자주식회사 | Apparatus and method for chemically and mechanically polishing semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1661780A (en) * | 2004-02-27 | 2005-08-31 | 台湾积体电路制造股份有限公司 | CMP apparatus and polishing method |
| CN1787179A (en) * | 2004-12-08 | 2006-06-14 | 上海华虹Nec电子有限公司 | Method for enhancing using efficiency of CMP equipment |
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| JP特开2004-6692A 2004.01.08 |
| JP特表2001-516145A 2001.09.25 |
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Effective date of registration: 20171127 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |