CN102227816B - 光伏电池 - Google Patents

光伏电池 Download PDF

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Publication number
CN102227816B
CN102227816B CN200980147610.1A CN200980147610A CN102227816B CN 102227816 B CN102227816 B CN 102227816B CN 200980147610 A CN200980147610 A CN 200980147610A CN 102227816 B CN102227816 B CN 102227816B
Authority
CN
China
Prior art keywords
solar cell
junction
quantum
gaas
ingaasp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980147610.1A
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English (en)
Chinese (zh)
Other versions
CN102227816A (zh
Inventor
J·罗伯茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Operations LLC
Original Assignee
Flex Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN102227816A publication Critical patent/CN102227816A/zh
Application granted granted Critical
Publication of CN102227816B publication Critical patent/CN102227816B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN200980147610.1A 2008-09-29 2009-09-28 光伏电池 Expired - Fee Related CN102227816B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0817803.0 2008-09-29
GB0817803.0A GB2463905B (en) 2008-09-29 2008-09-29 Photovoltaic cell
PCT/GB2009/002313 WO2010035014A1 (en) 2008-09-29 2009-09-28 Photovoltaic cell

Publications (2)

Publication Number Publication Date
CN102227816A CN102227816A (zh) 2011-10-26
CN102227816B true CN102227816B (zh) 2015-08-19

Family

ID=40019730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980147610.1A Expired - Fee Related CN102227816B (zh) 2008-09-29 2009-09-28 光伏电池

Country Status (8)

Country Link
US (1) US8901412B2 (enExample)
EP (1) EP2342755B1 (enExample)
JP (1) JP5502871B2 (enExample)
CN (1) CN102227816B (enExample)
AU (1) AU2009295636B2 (enExample)
GB (1) GB2463905B (enExample)
TW (1) TWI437716B (enExample)
WO (1) WO2010035014A1 (enExample)

Families Citing this family (19)

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US10541349B1 (en) 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
GB2483276B (en) * 2010-09-02 2012-10-10 Jds Uniphase Corp Photovoltaic junction for a solar cell
TWI427807B (zh) * 2010-10-28 2014-02-21 Atomic Energy Council 能增加光電流收集效率的太陽能電池結構
JP6335784B2 (ja) * 2011-09-23 2018-05-30 ガリウム エンタープライジズ ピーティーワイ リミテッド 可変バンドギャップ太陽電池
JP2013172072A (ja) * 2012-02-22 2013-09-02 Nippon Telegr & Teleph Corp <Ntt> ２接合太陽電池
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
US10903383B2 (en) 2012-09-14 2021-01-26 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9997659B2 (en) 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11495705B2 (en) 2012-09-14 2022-11-08 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) * 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
DE102016005640A1 (de) * 2015-05-07 2016-11-10 Solaero Technologies Corp. Invertierte Mehrfach-Solarzelle
DE102015016822B4 (de) * 2015-12-25 2023-01-05 Azur Space Solar Power Gmbh Stapelförmige Mehrfach-Solarzelle
CN107546287B (zh) * 2017-08-25 2019-10-01 扬州乾照光电有限公司 一种太阳能电池及其制作方法
DE102018001592A1 (de) * 2018-03-01 2019-09-05 Azur Space Solar Power Gmbh Mehrfachsolarzelle
CN118553806B (zh) * 2023-02-27 2025-02-25 江苏宜兴德融科技有限公司 一种太阳能电池
CN117410362A (zh) * 2023-11-10 2024-01-16 扬州乾照光电有限公司 一种多结太阳电池结构
CN118658918B (zh) * 2024-07-19 2025-11-04 江苏仲磊芯半导体有限公司 一种四结太阳能电池及其制作方法

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JPH0955522A (ja) * 1995-08-10 1997-02-25 Japan Energy Corp トンネルダイオード
US6150604A (en) * 1995-12-06 2000-11-21 University Of Houston Quantum well thermophotovoltaic energy converter
JPH09162432A (ja) * 1995-12-06 1997-06-20 Oki Electric Ind Co Ltd 太陽電池
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
JP2956619B2 (ja) * 1996-11-06 1999-10-04 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の成長方法
JPH11163380A (ja) * 1997-11-27 1999-06-18 Sumitomo Electric Ind Ltd 高効率積層型太陽電池及びその作製方法
US6229152B1 (en) * 1999-02-18 2001-05-08 The Trustees Of Princeton University Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
US6559471B2 (en) * 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
WO2003012881A1 (en) * 2001-07-25 2003-02-13 Imperial College Innovations Limited Photovoltaic device having an ingaas/ingap multiple quantum well portion
US6984538B2 (en) * 2001-07-26 2006-01-10 Phosistor Technologies, Inc. Method for quantum well intermixing using pre-annealing enhanced defects diffusion
KR100469642B1 (ko) * 2002-05-31 2005-02-02 한국전자통신연구원 특정 파장의 빛을 선택적으로 검출하는 광수신기 및 그제조 방법
JP4185724B2 (ja) * 2002-07-18 2008-11-26 シャープ株式会社 半導体レーザ装置およびそれを用いた光ディスク装置
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US7358523B2 (en) * 2004-10-20 2008-04-15 Avago Technologies Fiber Ip Pte Ltd Method and structure for deep well structures for long wavelength active regions

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Nanoparticle-induced light scattering for improved performance of quantum-well solar cells;D. Derkacs et al;《APPLIED PHYSICS LETTERS》;20080903;第93卷;第091107-1、091107-2页 *

Also Published As

Publication number Publication date
AU2009295636B2 (en) 2013-10-17
WO2010035014A1 (en) 2010-04-01
GB2463905A (en) 2010-03-31
EP2342755B1 (en) 2017-03-15
GB0817803D0 (en) 2008-11-05
GB2463905B (en) 2012-06-06
JP2012504331A (ja) 2012-02-16
TW201021225A (en) 2010-06-01
US20110180129A1 (en) 2011-07-28
CN102227816A (zh) 2011-10-26
TWI437716B (zh) 2014-05-11
US8901412B2 (en) 2014-12-02
EP2342755A1 (en) 2011-07-13
AU2009295636A1 (en) 2010-04-01
JP5502871B2 (ja) 2014-05-28

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: FLEX PRODUCTS INC. A. JDS UNIPHA

Free format text: FORMER OWNER: QUANTASOL LTD.

Effective date: 20150428

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150428

Address after: California, USA

Applicant after: Flex Products Inc.

Address before: Surrey

Applicant before: Quantasol Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20151120

Address after: California, USA

Patentee after: Lumentum Operations LLC

Address before: California, USA

Patentee before: Flex Products Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150819

Termination date: 20210928