JP2012504331A - 光電池 - Google Patents
光電池 Download PDFInfo
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- JP2012504331A JP2012504331A JP2011528418A JP2011528418A JP2012504331A JP 2012504331 A JP2012504331 A JP 2012504331A JP 2011528418 A JP2011528418 A JP 2011528418A JP 2011528418 A JP2011528418 A JP 2011528418A JP 2012504331 A JP2012504331 A JP 2012504331A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 102
- 230000004888 barrier function Effects 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000010521 absorption reaction Methods 0.000 claims description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims description 26
- 229910052785 arsenic Inorganic materials 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 23
- 229910052738 indium Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 71
- 210000004027 cell Anatomy 0.000 description 64
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009533 lab test Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- -1 GaAsP Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000004692 intercellular junction Anatomy 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
【選択図】 図4
Description
−GaAs基板−111面に10度で切断された(100)基板の使用は、[100]基板に3度で切断された通常の(100)の代わりに用いることができ、これによりGaInP層中のIII属原子の不規則化を増大する(<111>または<110>結晶面から2度を超える、好ましくは7度を超えることがまた利点である)、
−ケイ素原子で1×1018cm-3の密度までnドープされた100nm厚さのGaAs層、
−2×1017cm-3のケイ素原子でnドープされた2000nmGaAs、
−50の量子井戸、それぞれ6.8nm厚さのIn0.23Ga0.77Asはそれぞれ28.6nm厚さのGa0.89AsP0.11の量子障壁で分離され、末端井戸の外側に半分の厚さの障壁を有し、井戸は半値幅57.7meVを有する1016nmの光ルミネセンスピークによって特徴付けられる、
−非ドープ10nmGaAs、
−2×1018cm-3の炭素原子でpドープされた400nmGaAsエミッター、
−43nmのAl0.8Ga0.2Asのp窓、
−ケイ素原子で高密度にpドープされた15nmのAl0.45Ga0.55Asと、高密度にnドープされた15nmのGaAsのトンネル接合、
−30nmのAlInP、ケイ素原子でnドープされた少数キャリア反射体、
−GaAsに格子整合し、1×1017cm-3のケイ素原子でnドープされた570nmのGaInP、
−22の量子井戸、それぞれ4.4nm厚さのGaInAsP(組成は以下参照)がそれぞれ15.4nm厚さのGaInP量子障壁で分離されており、すべてがGaAsに格子整合し(または極めて密接に整合し、ごくわずかなひずみ平衡を保っている)、井戸は、19.8nmのX線周期を有し、用いられた4インチのウエハの中央で716nmの光ルミネセンスピークによって特徴付けられる、
−GaAsに格子整合した60nmのGaInP、1×1018cm-3の亜鉛原子でドープされている、
−GaAsに格子整合した40nmのGaInP、3×1018cm-3の亜鉛原子でドープされている、
−GaAsに格子整合した30nmのAlInP、5×1017cm-3の亜鉛原子でドープされている、
−1×1020cm-3の炭素原子でpドープされた150nmのGaAs。
Ga(1+y)/2.08In(1+y)/2.08AsyP1-y
によるyのすべての値でGaAsと整合することができる。
−1.0×1018cm-3でnドープされたGaAsの500nm厚さのn−バッファー、
−2.0×1018cm-3でSiドープされたAlInPの60nmの少数キャリア反射体層、
−1.0×1017cm-3でSiドープされたGaInPの570nmのバルクn−領域、
−障壁および井戸の5回繰り返し層、障壁は60nmの非ドープGaInPであり、井戸層は6nmの非ドープGaAsである、
−非ドープGaInPの100nm厚さのi−領域バッファー、
−7.0×1018cm-3でZnドープされた100nmのバルクp−領域、
−1018cm-3でZnドープされたAlInPの30nm窓層、および
−2×1020cm-3でCドープされた150nmのGaAsキャップ、を含む。
Claims (32)
- 光起電性接合を含む太陽電池であって、光起電性接合が、
第1および第2バルク半導体領域;および
バルク領域間に配置された真性領域を含み、
真性領域が、四元InGaAsPから形成された複数の量子井戸を含み、ここでIn、Ga、AsおよびPの相対比が、InGaAsPがGaAsまたはゲルマニウムの格子定数の2%以内で格子整合する様な比であり、量子井戸が量子障壁によって分離されている太陽電池。 - 量子井戸が、AsとPの相対比がAsyとP1-y、ただし0.25≦y≦0.45で規定されるInGaAsPから形成される、請求項1に記載の太陽電池。
- 少なくとも一部の障壁が、Ga、InおよびPを含む半導体材料から形成される、請求項1または2に記載の太陽電池。
- 少なくとも一部の障壁が三元GaInPから形成される、請求項3に記載の太陽電池。
- 少なくとも1つのバルク半導体領域が、Ga、InおよびPを含むドープ半導体材料から形成される、請求項1〜4のいずれかに記載の太陽電池。
- 一部またはすべての量子井戸が、In、Ga、As、およびPの相対比が、これらの量子井戸が第1バルク半導体領域、第2バルク半導体領域、および下層の基板の少なくとも1つに格子整合する様な比であるInGaAsPから形成される、請求項1〜5のいずれかに記載の太陽電池。
- 量子井戸と量子障壁が、複数の量子井戸と障壁が、下層の基板の格子間隔および/または少なくとも1つのバルク半導体領域の格子間隔と一致する通常の格子間隔で平衡を保つ補正圧縮応力および引張応力を提供する様な組成と厚さを有する、請求項1〜5のいずれかに記載の太陽電池。
- 量子井戸の吸収バンド端が700と740nmの間の波長を有する、請求項1〜7のいずれかに記載の太陽電池。
- 真性領域が少なくとも20の前記量子井戸を含む、請求項1〜8のいずれかに記載の太陽電池。
- 一部またはすべてのInGaAsP量子井戸が15nm未満の厚さ、より好ましくは10nm未満の厚さである、請求項1〜9のいずれかに記載の太陽電池。
- 少なくとも一部の前記量子井戸が、四元InGaAsPにより障壁から分離されたGaAsのサブウェルを含む、請求項1〜10のいずれかに記載の太陽電池。
- さらに下層の基板を含む、請求項1〜11のいずれかに記載の太陽電池。
- 下層の基板が、GaAs、ゲルマニウム、およびGaAsまたはゲルマニウムに実質的に格子整合した基板のうちの一つである、請求項12に記載の太陽電池。
- 基板が、<111>または<110>結晶面に対して(100)から2度を超える角度、好ましくは7度を超える角度で切断されている、請求項13に記載の太陽電池。
- 太陽電池が、第1接合と基板の間に配置された第2光起電性接合を含み、通常の光電流がすべての接合を通過する2つ以上の光起電性接合のタンデムセルを形成する、請求項12〜14のいずれかに記載の太陽電池。
- 第2接合が、第1接合の吸収端波長を超える、好ましくは少なくとも1000nmを超える、より好ましくは少なくとも1040nmを超える吸収端波長を有する、請求項15に記載の太陽電池。
- 第2接合が、複数の量子井戸、好ましくは少なくとも30のこのような量子井戸を含む真性領域を含む、請求項16に記載の太陽電池。
- 第2接合の少なくとも一部の量子井戸がInGaAsから形成される、請求項17に記載の太陽電池。
- 第2接合の量子井戸が、少なくとも一部がGaAsPから形成された量子障壁間に配置されており、第2接合の量子井戸と量子障壁が、複数の量子井戸と障壁が、下層の基板の格子間隔と一致する通常の格子間隔で平衡を保つ補正圧縮応力および引張応力を提供する様な組成と厚さを有する、請求項18に記載の太陽電池。
- 接合の光電流が所定の照射条件に適合するように第1および第2接合を構成する、請求項12から19のいずれかの太陽電池。
- 太陽照射から発電する光起電力装置であって、
請求項12から20のいずれかに記載の太陽電池;および
集束された日光を太陽電池の表面に運ぶ様に配置された集光器を含む装置。 - 集光器が少なくとも50倍に集束された日光を運ぶ、請求項21に記載の光起電力装置。
- エピタキシャル成長を用いる太陽電池光起電性接合を形成する方法であって、
第1バルク半導体層を形成し;
第1ドープバルク層の上部に、障壁層によって分離された四元InGaAsPの量子井戸層を含む真性領域を形成し、量子井戸は、In、Ga、AsおよびPの相対比がGaAsの格子定数の2%以内で格子整合する様な比であるInGaAsPから形成され;
第2バルク半導体層を真性領域の上部に形成する方法。 - 量子井戸が、AsとPの相対比がAsyとP1-y、ただし0.25≦y≦0.45で既定されるInGaAsPから形成される、請求項23に記載の方法。
- 1つまたは複数の障壁層が、Ga、InおよびPを含む半導体材料から形成される、請求項22または24に記載の方法。
- 前記1つまたは複数の障壁層が三元GaInPから形成される、請求項25の方法。
- 量子障壁層の形成から量子井戸層への移行が、ヒ素源の制御された導入と、対応するガリウム源の制御された低減により行われ、次の量子井戸層の形成への移行が、ヒ素源の停止と、対応するガリウム源の制御された増加により行われる、請求項25または26に記載の方法。
- 1つまたは複数のバルク半導体層が、Ga、InおよびPを含む半導体材料から、または640と700nmの間のバンド端を有する関連材料から形成される、請求項23〜27のいずれかに記載の方法。
- 1つまたは複数のInGaAsPの量子井戸層を形成することが、InGaAsP材料によって障壁層から分離されたGaAsのサブウェル層を形成することを含む、請求項23〜28のいずれかに記載の方法。
- 太陽電池光起電性接合であって、
GaAsに格子整合した第1および第2ドープバルク半導体領域であって、その少なくとも1つのバルク領域が、Ga、InおよびPを含む半導体材料から形成されるバルク半導体領域;および
障壁層によって分離された複数の量子井戸層を含む、バルク領域間に配置された真性領域であって、その量子井戸層が四元GaInAsPから形成される真性領域を含む太陽電池光起電性接合。 - 量子井戸層が、Ga、InおよびPを含む半導体材料から形成された障壁層によって分離された、請求項30に記載の光起電性接合。
- 中に多重量子井戸を有する真性領域を含む、GaAsまたはGeに格子整合するGaInPに基づく光起電性接合中に、延長した吸収端を提供する方法であって、少なくとも一部の量子井戸を四元InGaAsP材料から形成することを含む方法。
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