CN102224647B - 边发射半导体激光器芯片 - Google Patents

边发射半导体激光器芯片 Download PDF

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CN102224647B
CN102224647B CN2009801468590A CN200980146859A CN102224647B CN 102224647 B CN102224647 B CN 102224647B CN 2009801468590 A CN2009801468590 A CN 2009801468590A CN 200980146859 A CN200980146859 A CN 200980146859A CN 102224647 B CN102224647 B CN 102224647B
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semiconductor laser
laser chip
contact strip
edge
confinement
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CN102224647A (zh
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克里斯蒂安·劳尔
哈拉尔德·科尼格
沃尔夫冈·赖尔
尤伟·斯特劳斯
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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    • H01S5/00—Semiconductor lasers
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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    • H01S2301/00—Functional characteristics
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    • H01S2301/166—Single transverse or lateral mode
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    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Acoustics & Sound (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN2009801468590A 2008-11-21 2009-10-21 边发射半导体激光器芯片 Active CN102224647B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008058436.3A DE102008058436B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip
DE102008058436.3 2008-11-21
PCT/DE2009/001482 WO2010057455A2 (de) 2008-11-21 2009-10-21 Kantenemittierender halbleiterlaserchip

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CN102224647A CN102224647A (zh) 2011-10-19
CN102224647B true CN102224647B (zh) 2013-09-18

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US (1) US8831061B2 (enExample)
EP (1) EP2347482B1 (enExample)
JP (1) JP5528465B2 (enExample)
KR (1) KR101637054B1 (enExample)
CN (1) CN102224647B (enExample)
DE (1) DE102008058436B4 (enExample)
PL (1) PL2347482T3 (enExample)
WO (1) WO2010057455A2 (enExample)

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DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
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DE102017103789B4 (de) * 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode
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CN110021877B (zh) * 2018-01-10 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 一种脊形波导半导体激光器及其制备方法
RU2685434C1 (ru) * 2018-02-05 2019-04-18 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Инжекционный лазер
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EP3874566A1 (en) 2018-11-01 2021-09-08 Excelitas Canada Inc. Quad flat no-leads package for side emitting laser diode
CN111361781A (zh) * 2018-12-25 2020-07-03 海太半导体（无锡）有限公司 一种宽带激光器带再包装保存方法
DE102019106805A1 (de) * 2019-03-18 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement
DE102020108941B4 (de) * 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
CN115172331B (zh) * 2021-04-06 2025-05-27 芯恩（青岛）集成电路有限公司 晶圆对准标记、制作方法、晶圆对准装置及晶圆对准方法
DE102021122145A1 (de) * 2021-08-26 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung mindestens eines Laserchips und Laserchip
US20230088485A1 (en) * 2021-09-23 2023-03-23 Freedom Photonics Llc Segmented contact for current control in semiconductor lasers and optical amplifiers
CN120749530B (zh) * 2025-09-02 2025-11-18 深圳市星汉激光科技股份有限公司 一种集成量子点阵列的可调谐激光芯片及制备方法

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DE102008058436A1 (de) 2010-05-27
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JP2012509580A (ja) 2012-04-19
EP2347482A2 (de) 2011-07-27
KR20110097856A (ko) 2011-08-31
US8831061B2 (en) 2014-09-09
PL2347482T3 (pl) 2017-07-31
EP2347482B1 (de) 2017-01-25
WO2010057455A2 (de) 2010-05-27
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JP5528465B2 (ja) 2014-06-25
WO2010057455A3 (de) 2010-12-23

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