CN102224611B - 可光固化聚合物电介质及其制备方法和用途 - Google Patents

可光固化聚合物电介质及其制备方法和用途 Download PDF

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CN102224611B
CN102224611B CN200980146851.4A CN200980146851A CN102224611B CN 102224611 B CN102224611 B CN 102224611B CN 200980146851 A CN200980146851 A CN 200980146851A CN 102224611 B CN102224611 B CN 102224611B
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alkenyl
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divalence
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CN102224611A (zh
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J·奎因
颜河
郑焱
C·纽曼
S·A·克勒
A·法凯蒂
T·布赖纳
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Feilisi Co Ltd
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POLYERA CORP
BASF SE
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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CN200980146851.4A 2008-11-24 2009-11-20 可光固化聚合物电介质及其制备方法和用途 Expired - Fee Related CN102224611B (zh)

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CN107621751B (zh) * 2017-09-21 2021-02-09 儒芯微电子材料（上海）有限公司 含碱性香豆素结构的聚合物树脂及其光刻胶组合物
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JP5684715B2 (ja) 2015-03-18
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WO2010057984A3 (en) 2010-09-23
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US20110215334A1 (en) 2011-09-08
EP2368281A2 (en) 2011-09-28
CN102224611A (zh) 2011-10-19
JP5960202B2 (ja) 2016-08-02
US20140363690A1 (en) 2014-12-11
US9923158B2 (en) 2018-03-20
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