CN102218700A - Chemical mechanical polishing equipment - Google Patents
Chemical mechanical polishing equipment Download PDFInfo
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- CN102218700A CN102218700A CN2011101034957A CN201110103495A CN102218700A CN 102218700 A CN102218700 A CN 102218700A CN 2011101034957 A CN2011101034957 A CN 2011101034957A CN 201110103495 A CN201110103495 A CN 201110103495A CN 102218700 A CN102218700 A CN 102218700A
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- communicating pipe
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- filter
- control valve
- air communicating
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Abstract
The invention relates to chemical mechanical polishing equipment, which comprises a polishing head, a gas communicating pipe, a pressure control valve and a filter, wherein the inside of the polishing head is provided with a gas pressurizing chamber; the gas communicating pipe is communicated with the gas pressurizing chamber; the pressure control valve is arranged on the gas communicating pipe; the filter is arranged on the gas communicating pipe and is arranged between the gas pressurizing chamber and the pressure control valve. In the chemical mechanical polishing equipment, as the filter is arranged on the gas communicating pipe communicated with the gas pressurizing chamber of the polishing head and is filled on the gas communicating pipe, the gas communication of the gas communicating pipe is guaranteed; and meanwhile, wafer fragments and other impurities are effectively prevented from entering the pressure control valve to cause damage, thus greatly reducing the cost and improving the working efficiency.
Description
Technical field
The present invention relates to a kind of semiconductor technology manufacturing equipment, relate in particular to a kind of chemical-mechanical grinding device.
Background technology
Along with the develop rapidly of super large-scale integration ULSI (Ultra Large Scale Integration), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous.In order to improve integrated level, reduce manufacturing cost, the characteristic size of element (Feature Size) constantly diminishes, number of elements in the chip unit are constantly increases, plane routing has been difficult to satisfy the requirement that the element high density distributes, can only adopt polylaminate wiring technique, utilize the vertical space of chip, further improve the integration density of device.But the application of polylaminate wiring technique can cause silicon chip surface uneven, and is extremely unfavorable to graphic making.For this reason, need carry out planarization (Planarization) to irregular wafer surface handles.At present, chemical mechanical milling method (CMP, Chemical mechanical Polishing) is the best approach of reaching overall planarization, especially in the semiconductor fabrication process technology.
Chemical mechanical milling method (CMP) is the technical process of a complexity, and it is that its device therefor often is called milling apparatus or polishing machine by the relative motion planarization wafer surface between wafer and the grinding pad.During grinding, the belt grinding of the wafer that will grind faces down attached on the grinding head, to be ground the counterrotating grinding pad of contact of wafer, the downforce that grinding head provides is pressed onto wafer on the grinding pad, post when rotating under the drive of grinding pad at motor when the surface, grinding head also relatively rotates.Simultaneously, lapping liquid is transported on the grinding pad by lapping liquid supply pipe (Tube), and be evenly distributed on the grinding pad by centrifugal force, chemical composition in this grinding pad with by grinding wafers generation chemical reaction, transfer insoluble matter to lyotrope matter (chemical reaction process), by mechanical friction these lyotropes are removed from polished surface then, realize the surfacing of wafer being removed, reach overall planarization effect in conjunction with mechanism and chemical reaction.The remarkable quality problems that cmp (CMP) brings are surface scratches (Scratch), tend to there is scratch through the thin layer after the CMP processing on the surface, the scratch of these little and difficult discoveries easily causes short circuit or open circuit phenomenon at intermetallic, reduces the yield rate of product greatly.
In the prior art, milling apparatus comprises the grinding pad that is used to grind wafer, and the grinding head that is used for grasping silicon wafer, and grinding head comprises a body, has the gas pressurized chamber in a body, and the opening part below the gas pressurized chamber is sealed by membrane structure.Membrane structure contacts with wafer.The gas pressurized chamber is connected with air communicating pipe, by the air pressure of pneumatic control valve control gas pressurized chamber interior.When the grinding head grasping silicon wafer, the gas pressurized chamber interior is a negative pressure, draws wafer, when wafer grinds on grinding pad, the gas pressurized chamber interior is a malleation, membrane structure expands and presses down, and increases pressure between wafer and the grinding pad, makes crystal column surface obtain grinding, when grinding work stops, the gas pressurized chamber interior becomes negative pressure, and the absorption wafer drives wafer and breaks away from grinding pad.
Yet, in chemical mechanical planarization process, can occur because of the wafer quality problem, process of lapping pressure is inhomogeneous and problem such as milling apparatus fault causes the situation of wafer fragment, in a single day the detection system of chemical-mechanical grinding device detects the fragment fault, promptly control the grinding head grasping silicon wafer at once and leave grinding pad, this moment, the gas pressurized chamber of grinding head became negative pressure.The wafer fragment can scratch membrane structure because of suction function, and wafer fragment, lapping liquid particle and other impurity can enter in the pneumatic control valve by the gas pressurized chamber, cause the damage of pneumatic control valve.Owing to change the pneumatic control valve costliness, and need to change a series of equipment, so increase cost greatly.
Summary of the invention
The technical problem to be solved in the present invention is that a kind of chemical-mechanical grinding device that prevents that pneumatic control valve is damaged when wafer breakage is provided.
For addressing the above problem, the invention provides a kind of chemical-mechanical grinding device, comprising:
Grinding head, described grinding head inside has the gas pressurized chamber;
Air communicating pipe is communicated with described gas pressurized chamber;
Pneumatic control valve is arranged on the described air communicating pipe;
Filter is fixedly set on the described air communicating pipe, between described gas pressurized chamber and described pneumatic control valve.
Further, described filter comprises body and filter, wherein,
Described body and described air communicating pipe are suitable;
Described filter is made up of Web materials, is filled in the described body.
Further, described filter material is plastics or cotton.
Further, described air communicating pipe is the rubber material.
In sum, chemical-mechanical grinding device of the present invention with air communicating pipe that grinding head gas pressurized chamber is connected on filter is set, described filter is filled on the described air communicating pipe, ensure when air communicating pipe gas is communicated with, effectively stop wafer fragment and other impurity to enter pneumatic control valve and cause damage, thereby reduce cost greatly and increase work efficiency.
Description of drawings
Fig. 1 is the brief configuration schematic diagram of chemical-mechanical grinding device one embodiment of the present invention.
The specific embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as limitation of the invention.
Core concept of the present invention is: with air communicating pipe that the gas pressurized chamber of grinding head links to each other on, gas pressure chamber and the pneumatic control valve that is arranged at equally on the air communicating pipe be provided with a filter
For addressing the above problem, the invention provides a kind of chemical-mechanical grinding device, comprising:
Grinding head 101, described grinding head 101 inside have gas pressurized chamber 103;
Chemical-mechanical grinding device described in the present embodiment also comprises other necessarieses, for example also comprise: with described grinding head position grinding pad suitable, that be used to grind wafer, the lapping liquid supply pipe, the supply lapping liquid improves grinding effect between described grinding pad and the wafer; And other necessarieses etc. not only are limited to above-mentionedly, and above-mentioned composition is well known to those skilled in the art, and does not do at this and gives unnecessary details.
Said apparatus is in chemical mechanical planarization process, when occur because of the wafer quality problem, process of lapping pressure is inhomogeneous and problem such as milling apparatus fault when causing the situation of wafer fragment, the wafer fragment can scratch membrane structure because of the suction function of gas pressurized chamber 103, wafer fragment, lapping liquid particle and other impurity can enter in the air communicating pipe 105, can be filtered device 201 is blocked in the air communicating pipe 105, can not enter pneumatic control valve 107, thereby prevent that pneumatic control valve 107 is because of impurity damage.In case of necessity, change air communicating pipe 105 and filter 201 and get final product, easy and simple to handle, the consume cost is low, thereby has reduced cost, has improved operating efficiency.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (4)
1. a chemical-mechanical grinding device is characterized in that, comprising:
Grinding head, described grinding head inside has the gas pressurized chamber;
Air communicating pipe is communicated with described gas pressurized chamber;
Pneumatic control valve is arranged on the described air communicating pipe;
Filter is fixedly set on the described air communicating pipe, between described gas pressurized chamber and described pneumatic control valve.
2. chemical-mechanical grinding device as claimed in claim 1 is characterized in that described filter comprises body and filter, wherein,
Described body and described air communicating pipe are suitable;
Described filter is made up of Web materials, is filled in the described body.
3. chemical-mechanical grinding device as claimed in claim 2 is characterized in that, described filter material is plastics or cotton.
4. grinding head as claimed in claim 1 is characterized in that, described air communicating pipe is the rubber material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101034957A CN102218700A (en) | 2011-04-25 | 2011-04-25 | Chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101034957A CN102218700A (en) | 2011-04-25 | 2011-04-25 | Chemical mechanical polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102218700A true CN102218700A (en) | 2011-10-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101034957A Pending CN102218700A (en) | 2011-04-25 | 2011-04-25 | Chemical mechanical polishing equipment |
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| CN (1) | CN102218700A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60135174A (en) * | 1983-12-23 | 1985-07-18 | Toppan Printing Co Ltd | Rear surface polishing method |
| JPH04162627A (en) * | 1990-10-26 | 1992-06-08 | Matsushita Electric Ind Co Ltd | Treatment apparatus by chemical liquid |
| JPH11114810A (en) * | 1997-10-17 | 1999-04-27 | Toshiba Corp | Chemical mechanical polishing device |
| US6001238A (en) * | 1996-09-30 | 1999-12-14 | Kabushiki Kaisha Toshiba | Method for purifying pure water and an apparatus for the same |
| US6102788A (en) * | 1998-04-20 | 2000-08-15 | Nec Corporation | Semiconductor wafer carrier stage for chemical mechanical polishing apparatus |
| US6139680A (en) * | 1998-12-15 | 2000-10-31 | United Microelectronics Corp. | Exhaust line of chemical-mechanical polisher |
| CN201115930Y (en) * | 2007-08-20 | 2008-09-17 | 中芯国际集成电路制造(上海)有限公司 | Grinding devices |
-
2011
- 2011-04-25 CN CN2011101034957A patent/CN102218700A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60135174A (en) * | 1983-12-23 | 1985-07-18 | Toppan Printing Co Ltd | Rear surface polishing method |
| JPH04162627A (en) * | 1990-10-26 | 1992-06-08 | Matsushita Electric Ind Co Ltd | Treatment apparatus by chemical liquid |
| US6001238A (en) * | 1996-09-30 | 1999-12-14 | Kabushiki Kaisha Toshiba | Method for purifying pure water and an apparatus for the same |
| JPH11114810A (en) * | 1997-10-17 | 1999-04-27 | Toshiba Corp | Chemical mechanical polishing device |
| US6102788A (en) * | 1998-04-20 | 2000-08-15 | Nec Corporation | Semiconductor wafer carrier stage for chemical mechanical polishing apparatus |
| US6139680A (en) * | 1998-12-15 | 2000-10-31 | United Microelectronics Corp. | Exhaust line of chemical-mechanical polisher |
| CN201115930Y (en) * | 2007-08-20 | 2008-09-17 | 中芯国际集成电路制造(上海)有限公司 | Grinding devices |
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| C06 | Publication | ||
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111019 |