CN102208491B - Method for treating surface of silicon nitride by hydrofluoric acid solution - Google Patents
Method for treating surface of silicon nitride by hydrofluoric acid solution Download PDFInfo
- Publication number
- CN102208491B CN102208491B CN201110133302.2A CN201110133302A CN102208491B CN 102208491 B CN102208491 B CN 102208491B CN 201110133302 A CN201110133302 A CN 201110133302A CN 102208491 B CN102208491 B CN 102208491B
- Authority
- CN
- China
- Prior art keywords
- hydrofluoric acid
- silicon nitride
- acid solution
- roller bearing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The invention provides a method for treating a surface of silicon nitride by a hydrofluoric acid solution. In the method, the surface of the silicon nitride is treated by using the hydrofluoric acid solution with mass concentration of 0.5-3%, and the treatment is continued for 5-120 seconds so as to reduce a contact angle between a film and the solution so that the hydrophily of the surface of the film is improved.
Description
Technical field
The present invention relates to solar cell manufacture process, be specifically related to a kind of method adopting hydrofluoric acid solution to process silicon nitride surface.
Background technology
At present, silicon nitride is as excellent reduced passivation resisting film, become industrialization and produced a crystal-silicon solar cell requisite part, and be one of important procedure of the efficient selective emitter solar batteries such as such as laser doping now in silicon nitride surface by technology such as spin coating or spraying phosphoric acid.Spin coating technique is covered with in silicon nitride surface by rotation platform by solution; Spraying technology is that solution is smashed at nozzle place the drop that nebulizes, and is scattered in silicon nitride surface by the drop of low-pressure air current effect outgoing.In order to good coupling subsequent technique, the film thickness that these technology produce is nanometer scale, and need between drop to be interconnected to form continuously and uniform plastic film covering at silicon chip surface, this just proposes very high requirement to the hydrophily of film surface.One method carries out NH in position in silicon nitride preparation technology
3plasma surface treatment (application number 201010231360.4), makes film surface occur the nitrogen-containing functional group that polarity is stronger, such as-NH
2,-NH etc., but these functional groups are easily oxidized to ONH in atmosphere
2, ONH etc.Another method is the hydrophily adopting oxidizing solution to increase silicon nitride surface, and such as adopt the SC1 solution used in semiconductor cleaning, SC3 solution, salpeter solution etc., can improve the contact angle between silicon nitride surface and water.But these solution have stronger corrosivity, easily chemical corrosion is caused to the back metal electrode in solar cell device, and due to the special protection of strong oxidizing property action need of chemical solution.In sum, seek simple and fast, improve the hydrophilic method of silicon nitride surface most important to crystal silicon solar cell with selective emitter technology.
Patent of invention (application number 200910242237.X) adopts the hydrofluoric acid of dilution to clean silicon chip.This invention adopts the hydrofluoric acid of dilution to clean silicon chip in the final step chemical reagent cleaning of Wafer Cleaning flow process.In hydrofluoric acid clean liquid, the volume ratio of hydrofluoric acid and water is HF: H
2o=1: 300 ~ 1: 2000, the scavenging period of the hydrofluoric acid clean liquid of dilution is: 30 seconds ~ 1000 seconds.The step of this invention is: the hydrofluoric acid of APM → DHF → APM → dilution for many times.The process of hydrofluoric acid solution is carried out in this invention having hydrophilic silicon chip surface, keep the original hydrophily of silicon chip surface after process.
Summary of the invention
The technical problem to be solved in the present invention is: propose a kind of method obtaining high-hydrophilic silicon nitride surface, optimizes the preparation technology of crystal-silicon solar cell.
The technical solution adopted for the present invention to solve the technical problems is: the hydrofluoric acid solution adopting suitable concentration, guarantee, to silicon nitride, there is lower corrosion rate, to reduce the loss of silicon nitride thickness in processing procedure, and process rapidly the silicon nitride surface of silicon chip within a certain period of time, improve surface hydrophilicity.
Use the inventive method, after hydrofluoric acid effect silicon nitride surface, the non-polar group of silicon nitride surface can be etched away on the one hand, such as, the nitrogen-containing group deoxidation of oxidation be become polar group, expose more Si-N key, this Si-N key is the key that a kind of polarity is higher simultaneously.These nitrogenous group (-NH
2,-NH) and have the Si-N key of high polarity all to present hydrophily, reduce the contact angle of film and solution, add the hydrophily of silicon nitride surface.Adopt the inventive method can increase the hydrophily on surface simply, thus obtain even application or the spin-coated thin film of gross area at subsequent nitridation silicon face.
The inventive method specifically comprises the following steps:
(1) hydrofluoric acid that commercially available concentration is 40% is diluted with water, preparation quality concentration 0.5% ~ 3% hydrofluoric acid solution;
(2) hydrofluoric acid solution that step (1) is obtained being inserted conventional top is equipped with in the solution tank of roller bearing, makes described hydrofluoric acid solution not have roller bearing;
(3) be placed in by silicon substrate on described roller bearing, the silicon nitride of silicon substrate faces down and to contact with hydrofluoric acid solution;
(4) driving silicon chip to make it rotate along with roller bearing and advance, by regulating roller bearing speed, making the duration of hydrofluoric acid treatment silicon nitride surface be 5 ~ 120 seconds;
(5) at the silicon nitride surface spin coating processed through step (4) or the solution spraying phosphoric acid or boric acid, uniform surface film is formed.
The present invention carries out hydrofluoric acid solution process having hydrophobic silicon nitride surface, produces many polar groups, reduces the contact angle of film and solution, thus add the hydrophily of silicon nitride surface after process in silicon nitride surface.The present invention adopts hydrofluoric acid solution that the hydrophobic silicon nitride surface of script is treated to hydrophilic silicon nitride surface, and the improvement degree of effects on surface is larger.
The present invention can while not extending the process time substantially, and increase the hydrophily of silicon nitride surface easily, production cost is low, and production efficiency is high, workable.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is schematic diagram of the present invention, in figure: 1 hydrofluoric acid solution, 2 silicon substrates, 3 silicon nitrides, 4 roller bearings, 5 solution tanks.
Embodiment
As shown in Figure 1, process method step of the present invention is as follows:
1. be diluted with water the hydrofluoric acid that commercially available mass concentration is 40%, preparation quality concentration 0.5% ~ 3% hydrofluoric acid solution 1;
2. the hydrofluoric acid solution that step 1 is obtained is inserted conventional top to be equipped with in the solution tank 5 of roller bearing 4, make described hydrofluoric acid solution 1 not have roller bearing 4;
3. be placed in by silicon chip on described roller bearing 4, the silicon nitride of silicon substrate 2 faces down and to contact with hydrofluoric acid solution 1;
4. driving silicon substrate 2 to make it rotate along with roller bearing and advance, by regulating roller bearing 4 speed, making the duration of hydrofluoric acid treatment silicon nitride surface be 5 ~ 120 seconds;
5., at the surperficial spin coating of silicon nitride 3 processed through step 4 or the solution spraying phosphoric acid or boric acid, form uniform surface film.
Embodiment 1
Adopt conventional p-type crystalline silicon as substrate 2, silicon substrate 2 prepared silicon nitride 3, then operates according to following steps:
1) hydrofluoric acid that commercially available mass concentration is 40% is diluted with water, preparation quality concentration 0.5% hydrofluoric acid solution 1;
2) by step 1) obtained hydrofluoric acid solution 1 inserts in the solution tank 5 with roller bearing 4, described hydrofluoric acid solution
The liquid level of 1 did not have roller bearing 4;
3) silicon substrate 2 is placed on roller bearing 4, the silicon nitride of silicon substrate 2 is faced down and to contact with described hydrofluoric acid solution 1;
4) making silicon substrate 2 rotate along with roller bearing 4 and advance, making described hydrofluoric acid solution 1 process 120 seconds duration on silicon nitride 3 surface by regulating roller bearing speed;
5) uniform surface film is formed at silicon nitride 3 surface spraying phosphoric acid.
Embodiment 2
Adopt conventional N-shaped crystalline silicon as substrate 2, silicon substrate 2 prepared silicon nitride 3, then operates according to following steps:
1) hydrofluoric acid that commercially available mass concentration is 40% is diluted with water, preparation quality concentration 1% hydrofluoric acid solution 1;
2) by step 1) obtained hydrofluoric acid solution 1 inserts in the solution tank 5 with roller bearing 4, and the liquid level of described hydrofluoric acid solution 1 did not have roller bearing 4;
3) silicon substrate 2 is placed on roller bearing 4, the silicon nitride of silicon substrate 2 is faced down and to contact with hydrofluoric acid solution 1;
4) making silicon substrate 2 rotate along with roller bearing 4 and advance, making hydrofluoric acid solution 1 process 60 seconds duration on silicon nitride 3 surface by regulating roller bearing speed;
5) uniform surface film is formed at silicon nitride 3 surface spraying boric acid.
Embodiment 3
Adopt conventional p-type crystalline silicon as substrate 2, silicon substrate 2 prepared silicon nitride 3, then operates according to following steps:
1) hydrofluoric acid that commercially available mass concentration is 40% is diluted with water, preparation quality concentration 3% hydrofluoric acid solution 1;
2) by step 1) obtained hydrofluoric acid solution 1 inserts in the solution tank 5 with roller bearing 4, and the liquid level of described hydrofluoric acid solution 1 did not have roller bearing 4;
3) silicon substrate 2 is placed on roller bearing 4, the silicon nitride of silicon substrate 2 is faced down and to contact with described hydrofluoric acid solution 1;
4) making silicon substrate 2 rotate along with roller bearing 4 and advance, making described hydrofluoric acid solution 1 process 30 seconds duration on silicon nitride 3 surface by regulating roller bearing speed;
5) uniform surface film is formed at silicon nitride 3 surperficial spin coating phosphoric acid.
Embodiment 4
Adopt conventional N-shaped crystalline silicon as substrate 2, silicon substrate 2 prepared silicon nitride 3, then operates according to following steps:
1) hydrofluoric acid that commercially available mass concentration is 40% is diluted with water, preparation quality concentration 3% hydrofluoric acid solution 1;
2) by step 1) obtained hydrofluoric acid solution 1 inserts in the solution tank 5 with roller bearing 4, and the liquid level of described hydrofluoric acid solution 1 did not have roller bearing 4;
3) silicon substrate 2 is placed on roller bearing 4, the silicon nitride of silicon substrate 2 is faced down and to contact with described hydrofluoric acid solution;
4) making silicon substrate 2 rotate along with roller bearing 4 and advance, making described hydrofluoric acid solution 1 process 5 seconds duration on silicon nitride 3 surface by regulating roller bearing speed;
5) uniform surface film is formed at silicon nitride 3 surperficial spin coating boric acid.
Claims (1)
1. a method for treating surface of silicon nitride by hydrofluoric acid solution, is characterized by described method step as follows:
1) hydrofluoric acid that commercially available mass concentration is 40% is diluted with water, the hydrofluoric acid solution (1) of preparation quality concentration 0.5% ~ 3%;
2) by step 1) obtained hydrofluoric acid solution (1) inserts top and is equipped with in the solution tank (5) of roller bearing (4), and described hydrofluoric acid solution (1) did not have roller bearing (4) just;
3) be placed on roller bearing (4) by silicon substrate (2), the silicon nitride of silicon substrate (2) faces down and to contact with described hydrofluoric acid solution (1);
4) silicon substrate (2) is driven, silicon substrate (2) is made to rotate with roller bearing (4) and advance, regulate the speed of roller bearing (4), the duration making described hydrofluoric acid (1) process silicon nitride surface is 5 ~ 120 seconds;
5) through step 4) the silicon nitride surface spin coating that processed or spraying phosphoric acid or boric acid, form uniform surface film in silicon nitride surface;
Described processing method adopts hydrofluoric acid effect silicon nitride surface, the non-polar group of silicon nitride surface is etched away, the nitrogen-containing group deoxidation of oxidation is become polar group, reduce the contact angle of film and solution, increase the hydrophily of silicon nitride surface, obtain high-hydrophilic silicon nitride surface; Described method for treating surface of silicon nitride by hydrofluoric acid solution is for the preparation of crystal-silicon solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110133302.2A CN102208491B (en) | 2011-05-20 | 2011-05-20 | Method for treating surface of silicon nitride by hydrofluoric acid solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110133302.2A CN102208491B (en) | 2011-05-20 | 2011-05-20 | Method for treating surface of silicon nitride by hydrofluoric acid solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102208491A CN102208491A (en) | 2011-10-05 |
| CN102208491B true CN102208491B (en) | 2015-03-18 |
Family
ID=44697231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110133302.2A Expired - Fee Related CN102208491B (en) | 2011-05-20 | 2011-05-20 | Method for treating surface of silicon nitride by hydrofluoric acid solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102208491B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115472605B (en) * | 2022-09-10 | 2023-11-28 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006071535A2 (en) * | 2004-12-23 | 2006-07-06 | Lam Research Corporation | Silicon electrode assembly surface decontamination by acidic solution |
| CN101010148A (en) * | 2004-06-21 | 2007-08-01 | 瓦赫宁根大学 | Tailor-made functionalized silicon and/or germanium surfaces |
| CN101118855A (en) * | 2006-08-01 | 2008-02-06 | 上海华虹Nec电子有限公司 | Method for removing silicon chip back side silicon nitride film |
| CN101722159A (en) * | 2009-12-04 | 2010-06-09 | 北京有色金属研究总院 | Process for cleaning silicon chip by using diluted fluohydric acid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8221552B2 (en) * | 2007-03-30 | 2012-07-17 | Lam Research Corporation | Cleaning of bonded silicon electrodes |
-
2011
- 2011-05-20 CN CN201110133302.2A patent/CN102208491B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010148A (en) * | 2004-06-21 | 2007-08-01 | 瓦赫宁根大学 | Tailor-made functionalized silicon and/or germanium surfaces |
| WO2006071535A2 (en) * | 2004-12-23 | 2006-07-06 | Lam Research Corporation | Silicon electrode assembly surface decontamination by acidic solution |
| CN101118855A (en) * | 2006-08-01 | 2008-02-06 | 上海华虹Nec电子有限公司 | Method for removing silicon chip back side silicon nitride film |
| CN101722159A (en) * | 2009-12-04 | 2010-06-09 | 北京有色金属研究总院 | Process for cleaning silicon chip by using diluted fluohydric acid |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102208491A (en) | 2011-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102751377B (en) | Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells | |
| CN102171798B (en) | Method for chemically treating a substrate | |
| US9023682B2 (en) | Method for producing a photovoltaic solar cell | |
| US20120295447A1 (en) | Compositions and Methods for Texturing of Silicon Wafers | |
| US20220238748A1 (en) | Solar cell and preparation method therefor, method for processing n-type doped silicon film, and semiconductor device | |
| Moldovan et al. | Combined Ozone/HF/HCI based cleaning and adjusted emitter etch-back for silicon solar cells | |
| CN106409977B (en) | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell | |
| EP1830397A3 (en) | Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor wafer | |
| CN107623053A (en) | Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method | |
| CN103985780B (en) | The manufacture method of solaode | |
| CN102208491B (en) | Method for treating surface of silicon nitride by hydrofluoric acid solution | |
| CN106340446A (en) | Method for removing surface line marks of diamond linear cutting polycrystalline silicon chip through wet method | |
| CN101901832B (en) | Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof | |
| CN206098429U (en) | A etching device for crystal silicon chip | |
| CN106711248B (en) | A method of reducing ingot casting polysilicon chip surface reflectivity | |
| CN111446331A (en) | Method for removing plating and method for preparing passivated contact solar cell | |
| US8889536B2 (en) | Method for forming a dopant profile | |
| CN104143590B (en) | A kind of simple and quick silicon face passivating method | |
| CN103258728A (en) | Silicon wafer etching method and manufacturing method of solar battery piece | |
| CN114203854B (en) | P-type crystalline silicon solar cell and preparation method thereof | |
| KR101642045B1 (en) | Wafer for use in solar cells, manufacturing method of wafer for use in solar cells, solar cell manufacturing method and solar cell module manufacturing method | |
| CN205385026U (en) | Two -way discharge tube chip | |
| CN102655112B (en) | Method for realizing isolation among active regions of germanium-based MOS (Metal Oxide Semiconductor) device | |
| RU2011134068A (en) | METHOD FOR INCREASING SURFACE RESISTANCE OF PLATE AND / OR POWER DENSITY LEVEL OF PHOTOELECTRIC ELEMENT | |
| JP2016032073A (en) | Method and device for manufacturing solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150318 Termination date: 20200520 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |