CN102201542A - White organic electric field luminous element - Google Patents
White organic electric field luminous element Download PDFInfo
- Publication number
- CN102201542A CN102201542A CN2011100766888A CN201110076688A CN102201542A CN 102201542 A CN102201542 A CN 102201542A CN 2011100766888 A CN2011100766888 A CN 2011100766888A CN 201110076688 A CN201110076688 A CN 201110076688A CN 102201542 A CN102201542 A CN 102201542A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- emitting element
- organic electric
- field light
- white organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005684 electric field Effects 0.000 title claims abstract description 80
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 38
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 110
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 229910052799 carbon Inorganic materials 0.000 claims description 59
- 150000001875 compounds Chemical class 0.000 claims description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 5
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004171 alkoxy aryl group Chemical group 0.000 claims description 3
- 125000005055 alkyl alkoxy group Chemical group 0.000 claims description 3
- 125000003282 alkyl amino group Chemical group 0.000 claims description 3
- 125000003368 amide group Chemical group 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000001769 aryl amino group Chemical group 0.000 claims description 3
- 125000002837 carbocyclic group Chemical group 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 115
- -1 heterocyclic radical Chemical class 0.000 description 57
- 238000000034 method Methods 0.000 description 38
- 239000002585 base Substances 0.000 description 23
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 241000234435 Lilium Species 0.000 description 12
- OMFXVFTZEKFJBZ-HJTSIMOOSA-N corticosterone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@H](CC4)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OMFXVFTZEKFJBZ-HJTSIMOOSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 150000004696 coordination complex Chemical class 0.000 description 10
- 238000007738 vacuum evaporation Methods 0.000 description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 125000004104 aryloxy group Chemical group 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 5
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 241001597008 Nomeidae Species 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical class N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002739 metals Chemical group 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229930192474 thiophene Natural products 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- MSJMEQRRQOBTRB-UHFFFAOYSA-N C1=CC=CC=2C3=CC=CC=C3NC12.N1C=CC=CC=C1 Chemical compound C1=CC=CC=2C3=CC=CC=C3NC12.N1C=CC=CC=C1 MSJMEQRRQOBTRB-UHFFFAOYSA-N 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 3
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229940052810 complex b Drugs 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011737 fluorine Chemical group 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 125000005553 heteroaryloxy group Chemical group 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000010023 transfer printing Methods 0.000 description 3
- 150000003624 transition metals Chemical group 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical compound C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- DKQIZRNNADMWTR-UHFFFAOYSA-N 3-(2-aminophenyl)-1-phenylprop-2-en-1-one Chemical compound NC1=CC=CC=C1C=CC(=O)C1=CC=CC=C1 DKQIZRNNADMWTR-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical group C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 125000004414 alkyl thio group Chemical group 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000005110 aryl thio group Chemical group 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000005594 diketone group Chemical group 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000005368 heteroarylthio group Chemical group 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002475 indoles Chemical class 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002602 lanthanoids Chemical group 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 2
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 150000003233 pyrroles Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 2
- UWRZIZXBOLBCON-UHFFFAOYSA-N styrylamine group Chemical group C(=CC1=CC=CC=C1)N UWRZIZXBOLBCON-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- MVXVYAKCVDQRLW-UHFFFAOYSA-N 1h-pyrrolo[2,3-b]pyridine Chemical class C1=CN=C2NC=CC2=C1 MVXVYAKCVDQRLW-UHFFFAOYSA-N 0.000 description 1
- DGMIPKNXUDSQGI-UHFFFAOYSA-N 2,2-dimethylpropyl formate Chemical compound CC(C)(C)COC=O DGMIPKNXUDSQGI-UHFFFAOYSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical group O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- BRVISAKSEYTNBQ-UHFFFAOYSA-N 2-$l^{1}-oxidanylpyrazine Chemical compound O=C1C=NC=C[N]1 BRVISAKSEYTNBQ-UHFFFAOYSA-N 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 description 1
- JDGRKGBUVQASCJ-UHFFFAOYSA-N 2-phenyl-1,3-benzoxazol-4-ol Chemical compound N=1C=2C(O)=CC=CC=2OC=1C1=CC=CC=C1 JDGRKGBUVQASCJ-UHFFFAOYSA-N 0.000 description 1
- WJXNZCVIGCGRDN-UHFFFAOYSA-N 2-phenyl-1,4-dihydroimidazo[4,5-b]pyridin-5-one Chemical compound N=1C2=NC(O)=CC=C2NC=1C1=CC=CC=C1 WJXNZCVIGCGRDN-UHFFFAOYSA-N 0.000 description 1
- HJJXCBIOYBUVBH-UHFFFAOYSA-N 2-phenyl-1h-benzimidazol-4-ol Chemical compound N1C=2C(O)=CC=CC=2N=C1C1=CC=CC=C1 HJJXCBIOYBUVBH-UHFFFAOYSA-N 0.000 description 1
- CEPQKEJONUPZGD-UHFFFAOYSA-N 2-phenyl-1h-imidazol-5-ol Chemical class N1C(O)=CN=C1C1=CC=CC=C1 CEPQKEJONUPZGD-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical compound C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 229910000574 NaK Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- NSIKFNOYIGGILA-UHFFFAOYSA-N [Na].[Na].[K] Chemical compound [Na].[Na].[K] NSIKFNOYIGGILA-UHFFFAOYSA-N 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- HAQFCILFQVZOJC-UHFFFAOYSA-N anthracene-9,10-dione;methane Chemical compound C.C.C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 HAQFCILFQVZOJC-UHFFFAOYSA-N 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 229940054051 antipsychotic indole derivative Drugs 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000005334 azaindolyl group Chemical group N1N=C(C2=CC=CC=C12)* 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 150000004054 benzoquinones Chemical class 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000031709 bromination Effects 0.000 description 1
- 238000005893 bromination reaction Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- QDGONURINHVBEW-UHFFFAOYSA-N dichlorodifluoroethylene Chemical group FC(F)=C(Cl)Cl QDGONURINHVBEW-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- TZMFJUDUGYTVRY-UHFFFAOYSA-N ethyl methyl diketone Natural products CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000005232 imidazopyridines Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 150000002527 isonitriles Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000004893 oxazines Chemical class 0.000 description 1
- 150000004880 oxines Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920003050 poly-cycloolefin Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 150000003921 pyrrolotriazines Chemical class 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001869 rapid Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004334 sorbic acid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- FCEHBMOGCRZNNI-UHFFFAOYSA-N thianaphthalene Natural products C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N triphenylene Chemical compound C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0033—Iridium compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a white organic electric field luminous element, which has a luminescent layer between an anode and a cathode. The luminescent layer includes iridium complex expressed in the following structure formula (1).
Description
Technical field
The present invention relates to a kind of organic electric-field light-emitting element (following " organic electroluminescent device ", " organic EL " of being also referred to as sometimes) that sends white light.
Background technology
Organic electric-field light-emitting element has specialities such as self-luminous, high-speed response, by expectation be applied to throw light on, in the semiconductor of LCD etc., particularly, since the element of 2 stratotypes (cascade type) that the organic film of reporting the organic film (hole transporting layer) of cavity conveying and electron transport (electron supplying layer) is laminated, as receiving much concern with the luminous large area light emitting element of the low-voltage below the 10V.The organic electric-field light-emitting element of cascade type with positive pole/hole transporting layer/luminescent layer/electron supplying layer/negative pole as basic comprising.
But, under the situation that organic electric-field light-emitting element is used as illumination, backlight liquid crystal display lamp etc., need white light.Because white light is the luminous acquisition that can't utilize single luminescent material, therefore can utilize the mixing of multiple luminescent material to obtain white light, the organic electric-field light-emitting element of following white was for example proposed, promptly, by in luminescent layer, containing by sending the dopant material that green iridium complex to red light, platinum complex etc. constitute, and realization low-voltage, high-luminous-efficiency (with reference to TOHKEMY 2001-319780 communique).
But, though this motion can be made as low-voltage by the concentration that improves dopant material, in a single day yet owing to improve the concentration of dopant material, will send the light from the green to the redness more consumingly, therefore have the problem that is difficult to carry out the adjustment of colourity in order to send white light.
So realistic situation is, require to develop as early as possible the organic electric-field light-emitting element of white of the adjustment of the balance that can take into account low-voltage, high-luminous-efficiency and color consumingly.
Summary of the invention
Problem of the present invention is that solution above-mentioned variety of issue is in the past reached following purpose.That is, the objective of the invention is to, the white organic electric-field light-emitting element of the adjustment of the balance that can realize low-voltage, high-luminous-efficiency, color is provided.
As the mode that is used to address the above problem, as follows.That is,
＜1〉a kind of white organic electric-field light-emitting element is characterized in that, is the white organic electric-field light-emitting element that has luminescent layer between anode and negative electrode at least, and described luminescent layer contains the iridium complex with following structural formula (1) expression,
Wherein, in the described structural formula (1), A represents-C (R
4)-or-N-; B represents-C (R
7)-or-N-; R
1～R
7Independent separately, expression hydrogen atom, cyano group, hydroxyl, nitro, halogen atom, carbon number are that 1～20 alkyl, carbon number are that 1～20 alkoxyl, carbon number are that 6～20 aryl, carbon number are that 7～20 aralkyl, carbon number are that 2～20 alkyl alkoxy, carbon number are that 7～20 alkoxy aryl, carbon number are that 6～20 arylamino, carbon number are that 1～20 alkyl amino, carbon number are that 1～20 dialkyl amido, carbon number are 2～20 heterocyclic radical; R
4With R
5, R
4With R
6Can link mutually and form saturated or undersaturated carbocyclic ring, saturated or undersaturated heterocycle; X represents that 1 valency anionic property two nibbles dentate; M represents 2 or 3, and n represents 0 or 1, and m and n sum are 3.
White organic electric-field light-emitting element of the present invention has luminescent layer at least between anode and negative electrode.Above-mentioned luminescent layer contains the iridium complex with above-mentioned structural formula (1) expression.Luminous intensity height with near the blueness of iridium complex 420nm～450nm of above-mentioned structural formula (1) expression.Like this, blue intensity is strengthened, and the balance adjustment of color becomes easy.
＜2〉according to above-mentioned＜1〉described white organic electric-field light-emitting element, wherein, luminescent layer also contain can be luminous luminescent material.
＜3〉according to above-mentioned＜2〉described white organic electric-field light-emitting element, wherein, luminescent material is at least a luminescent material that is selected from platinum complex luminescent material, the iridium complex luminescent material.
＜4〉according to above-mentioned＜2〉to＜3 in any described white organic electric-field light-emitting element, wherein, the content of luminescent material is 0.01 quality %～60 quality % with respect to luminescent layer.
＜5〉according to above-mentioned＜2〉to＜4 in any described white organic electric-field light-emitting element, wherein, the peak luminous wavelength of luminescent material is 400nm～800nm.
＜6〉according to above-mentioned＜1〉to＜5 in any described white organic electric-field light-emitting element, wherein, the content of iridium complex compound in luminescent layer is 1 quality %～50 quality %.
＜7〉according to above-mentioned＜1〉to＜6 in any described white organic electric-field light-emitting element, wherein, the iridium complex compound is luminous under the peak luminous wavelength of the blueness of 400nm～450nm.
＜8〉according to above-mentioned＜1〉to＜7 in any described white organic electric-field light-emitting element, wherein, luminescent layer also contains material of main part.
According to the present invention, can solve above-mentioned variety of issue in the past, reach above-mentioned purpose, the white organic electric-field light-emitting element of the adjustment of the balance that can realize low-voltage, high-luminous-efficiency, color can be provided.
Description of drawings
Fig. 1 is the skeleton diagram of a layer example that constitutes of expression white organic electric-field light-emitting element of the present invention.
Wherein, 1 substrate, 2 anodes, 3 hole injection layers, 4 hole transporting layers, 5 luminescent layers, 6 electron supplying layers, 7 electron injecting layers, 8 negative electrodes, 10 white organic electric-field light-emitting elements
Embodiment
(white organic electric-field light-emitting element)
White organic electric-field light-emitting element of the present invention has anode, negative electrode and luminescent layer, in addition, as required, also has other layer.
＜luminescent layer 〉
Above-mentioned luminescent layer contains the iridium complex with above-mentioned structural formula (1) expression at least, in addition, as required, also contains luminescent material, material of main part and other composition.
-iridium complex-
As above-mentioned iridium complex, be with the compound of following structural formula (1) expression, both can be used alone or two or more kinds may be used.
As the A in the said structure formula (1), expression-C (R
4)-or-N-.In the middle of them, consider from the synthetic aspect of carrying out complex compound easily, preferred-C (R
4)-.
As the B in the said structure formula (1), expression-C (R
7)-or-N-.In the middle of them, consider from the synthetic aspect of carrying out complex compound easily, preferred-C (R
7)-.
As the R in the said structure formula (1)
1～R
7, represent that independently of one another hydrogen atom, cyano group, hydroxyl, nitro, halogen atom, carbon number are that 1～20 alkyl, carbon number are that 1～20 alkoxyl, carbon number are that 6～20 aryl, carbon number are that 7～20 aralkyl, carbon number are that 2～20 alkyl alkoxy, carbon number are that 7～20 alkoxy aryl, carbon number are that 6～20 arylamino, carbon number are that 1～20 alkyl amino, carbon number are that 1～20 dialkyl amido, carbon number are 2～20 heterocyclic radical.In the middle of them, consider, preferably contain halogen atom, especially preferably contain fluorine atom from the aspect of short wavelengthization.In addition, R
4With R
5, R
4With R
6Also can link mutually and form saturated or undersaturated carbocyclic ring, saturated or undersaturated heterocycle.
As the X in the said structure formula (1), represent that 1 valency anionic property two nibbles dentate.
Nibble dentate as above-mentioned 1 valency anionic property two, for example can enumerate 1 following valency anionic property two and nibble dentate, yet be not limited to them.
As the m in the said structure formula (1), expression 2 or 3.In the middle of them,, consider, be preferably 2 from the aspect that obtains various complex compound if 3 can only obtain a kind of complex compound.
As the n in the said structure formula (1), expression 0 or 1.In the middle of them, consider, be preferably 1 from the aspect that dentate has 1 difference just can obtain various complex compound.
As above-mentioned m and said n sum, be preferably 3.Because iridium gets 3 valencys easily, dentate be if 3 chemically also can become stable, if therefore above-mentioned and less than 3 or surpass 3, then has in the unsettled situation that chemically becomes.
As above-mentioned m and said n sum, be preferably 3, therefore as said structure formula (1), can use the expression of following structural formula (2) and following structural formula (3).
As the above-mentioned iridium complex of this kind, specifically, for example can enumerate following material, yet be not limited to them.
As the content (concentration) of above-mentioned iridium complex, the content in above-mentioned luminescent layer is preferably 1 quality %～50 quality %, and more preferably 2 quality %～20 quality % are preferably 3 quality %～10 quality % especially.
If above-mentioned content, then has the situation that can't send blue light fully less than 1 quality %, if surpass 50 quality %, then the concentration delustring becomes obviously, has the situation that can't obtain enough luminous efficiencies.
As the peak luminous wavelength of above-mentioned iridium complex, so long as the wavelength shorter than the peak luminous wavelength of luminescent material described later just is not particularly limited, yet is preferably 400nm～450nm, more preferably 410nm～440nm is preferably 420nm～430nm especially.
If above-mentioned peak luminous wavelength less than 400nm, then can enter ultraviolet region, become the wavelength shorter than visible light, if surpass 450nm, then have and compare the situation that can not become blue fully with the peak luminous wavelength of luminescent material described later.Above-mentioned peak wavelength can be measured with the luminescence generated by light determinator.
-material of main part-
As the aforementioned body material, be not particularly limited, can suitably select according to purpose, for example, can enumerate electron transport material of main part, cavity conveying material of main part etc.
--the electron transport material of main part-
Electron affinity Ea as above-mentioned electron transport material of main part is preferably 2.5eV～3.5eV, and more preferably 2.6eV～3.2eV is preferably 2.8eV～3.1eV especially.
If above-mentioned electron affinity is less than 2.5eV, then poor durability has the situation that stability reduces that drives, if surpass 3.5eV, then has electronics and is difficult to situation about moving in the luminescent material in luminescent layer.
Ionization potential Ip as above-mentioned electron transport material of main part is preferably 5.7eV～7.5eV, and more preferably 5.8eV～7.0eV is preferably 5.9eV～6.5eV especially.
If above-mentioned ionization potential is less than 5.7eV, then poor durability has the situation that stability reduces that drives, if surpass 7.5eV, then has the hole and is difficult to situation about moving in the luminescent material in luminescent layer.
As above-mentioned electron transport material of main part, be not particularly limited, can suitably select according to purpose, for example can enumerate pyridine, pyrimidine, triazine, imidazoles, pyrazoles, triazole, oxazole, oxadiazole, Fluorenone, anthraquinone bismethane, anthrone, two benzoquinones, thiapyran dioxide, carbodiimide, fluorenylidene methane, diphenylethyllene pyrazine, fluorine substituted aromatic compound, Zole derivatives, oxazine derivatives, metal complex etc.
As above-mentioned condensed ring tetracarboxylic anhydride, for example can enumerate Nai Bing perylene etc.
As above-mentioned metal complex, for example can enumerate the metal complex, metal phthalocyanine of phthalocyanine, oxine derivative, with benzoxazole, benzothiazole as metal complex of dentate etc.
As above-mentioned Zole derivatives, for example can enumerate benzimidizole derivatives, imidazopyridine derivatives etc.
As above-mentioned azine derivatives, for example can enumerate pyridine derivate, pyrimidine derivatives, pyrrolotriazine derivatives etc.
In the middle of them, preferable alloy complex compound, Zole derivatives, azine derivatives are considered from the aspect of durability, more preferably metal complex.
As above-mentioned metal complex, preferably have the metal complex of following dentate, that is, have at least one nitrogen-atoms, oxygen atom, sulphur atom with metal-complexing.
Metal ion as contained in the above-mentioned metal complex is not particularly limited, and can suitably select according to purpose, for example can enumerate beryllium ion, magnesium ion, aluminium ion, gallium ion, zinc ion, indium ion, tin ion, platinum ion, palladium ion etc.In the middle of them, preferred beryllium ion, aluminium ion, gallium ion, zinc ion, platinum ion, palladium ion, more preferably aluminium ion, zinc ion, palladium ion.
As dentate contained in the above-mentioned metal complex, for example can enumerate the middle dentates of putting down in writing such as " Photochemistry and Photophysics of Coordination Compounds ", Springer-Verlag company, H.Yersin work, distribution in 1987, " organometallic chemistry-basis and application-", skirt China room company, the bright husband's work in Yamamoto, nineteen eighty-two distribution.
As above-mentioned dentate, for example can enumerate azine dentate, hydroxy benzenes azoles dentate, alkoxyl dentate, aryloxy group dentate, heteroaryloxy dentate, alkylthio group dentate, arylthio dentate, heteroarylthio dentate, siloxy dentate, aromatic hydrocarbon anion binding base, heteroaromatic anion binding base, indolenine anion binding base etc.
As above-mentioned azine dentate, for example can enumerate pyridine coordination base, pyrimidine dentate and terpyridyl dentate etc.
As above-mentioned hydroxy benzenes azoles dentate, for example can enumerate hydroxy phenyl benzimidazole dentate, hydroxy phenyl benzoxazole dentate, hydroxy phenyl imidazoles dentate, hydroxy phenyl imidazopyridine dentate etc.
As above-mentioned alkoxyl dentate, preferred carbon number is 1～30, and more preferably carbon number is 1～20, and preferred especially carbon number is 1～10, for example can enumerate methoxyl group, ethyoxyl, butoxy, 2-ethyl hexyl oxy etc.
As above-mentioned aryloxy group dentate, preferred carbon number is 6～30, and more preferably carbon number is 6～20, and preferred especially carbon number is 6～12, for example can enumerate phenoxy group, 1-naphthoxy, 2-naphthoxy, 2,4,6-trimethyl phenoxy group, 4-xenyl oxygen base etc.
As above-mentioned heteroaryloxy dentate, preferred carbon number is 1～30, and more preferably carbon number is 1～20, and preferred especially carbon number is 1～12, for example can enumerate pyridine radicals oxygen base, pyrazinyl oxygen base, pyrimidine radicals oxygen base, quinolyl oxygen base etc.
As above-mentioned alkylthio group dentate, preferred carbon number is 1～30, and more preferably carbon number is 1～20, and preferred especially carbon number is 1～12, for example can enumerate methyl mercapto, ethylmercapto group etc.
As above-mentioned arylthio dentate, preferred carbon number is 6～30, and more preferably carbon number is 6～20, and preferred especially carbon number is 6～12, for example can enumerate thiophenyl etc.
As above-mentioned heteroarylthio dentate, for example preferred carbon number is 1～30, and more preferably carbon number is 1～20, and preferred especially carbon number is 1～12, for example can enumerate pyridine sulfenyl, 2-benzimidazole sulfenyl, 2-benzoxazole sulfenyl, 2-[4-morpholinodithio sulfenyl etc.
As above-mentioned siloxy dentate, for example preferred carbon number is 1～30, and more preferably carbon number is 3～25, and preferred especially carbon number is 6～20, for example can enumerate triphenyl siloxy, triethoxy-silicane oxygen base, triisopropyl siloxy etc.
As above-mentioned aromatic hydrocarbon anion binding base, for example preferred carbon number is 6～30, and more preferably carbon number is 6～25, and preferred especially carbon number is 6～20, for example can enumerate phenyl anion, naphthyl anion, anthryl anion etc.
As above-mentioned heteroaromatic anion binding base, preferred carbon number is 1～30, more preferably carbon number is 2～25, preferred especially carbon number is 2～20, for example can enumerate pyrroles's anion, pyrazoles anion, triazole anion, oxazole anion, benzoxazole anion, thiazole anion, benzothiazole anion, thiophene anion, benzothiophene anion etc.
In the middle of them, preferred azine dentate, hydroxy benzenes azoles dentate, aryloxy group dentate, heteroaryloxy, siloxy dentate, aromatic hydrocarbon anion binding base, heteroaromatic anion binding base, more preferably azine dentate, hydroxy benzenes azoles dentate, aryloxy group dentate, siloxy dentate, aromatic hydrocarbon anion binding base, heteroaromatic anion binding base.
As above-mentioned electron transport material of main part, for example can enumerate the electron transport material of main part of the metal complex of record in TOHKEMY 2002-235076 communique, TOHKEMY 2004-214179 communique, TOHKEMY 2004-221062 communique, TOHKEMY 2004-221065 communique, TOHKEMY 2004-221068 communique, the TOHKEMY 2004-327313 communique etc. etc.
As this kind electron transport material of main part, specifically, for example can enumerate following material, yet be not limited to them.
--the cavity conveying material of main part-
Electron affinity Ea as above-mentioned cavity conveying material of main part is preferably 1.0eV～3.0eV, and more preferably 1.5eV～2.8eV is preferably 2.0eV～2.5eV especially.
If above-mentioned electron affinity is less than 1.0eV, then poor durability has the situation that stability reduces that drives, if surpass 3.0eV, then has electronics and is difficult to situation about moving in the luminescent material in luminescent layer.
Ionization potential Ip as above-mentioned cavity conveying material of main part is preferably 5.0eV～7.0eV, and more preferably 5.2eV～6.5eV is preferably 5.5eV～6.0eV especially.
If above-mentioned ionization potential is less than 5.0eV, then poor durability has the situation that stability reduces that drives, if surpass 7.0eV, then has the hole and is difficult to situation about moving in the luminescent material in luminescent layer.
As above-mentioned cavity conveying material of main part, be not particularly limited, can suitably select according to purpose, for example can enumerate anthracene, benzophenanthrene, the pyrroles, indoles, carbazole, azaindole, the azepine carbazole, imidazoles, the polyaryl alkane, pyrazoline, pyrazolone, phenylenediamine, arylamine, the amino chalcone that replaces, the styryl anthracene, Fluorenone, hydrazone, Stilbene, silazane, aromatic uncle amine compound, the styryl amines, aromatic series two methine based compounds, the porphyrin based compound, the polysilane based compound, poly-(N-vinylcarbazole), the aniline based copolymer, thiophene oligomers, electrical conductance macromolecule oligomer such as polythiophene, organosilan, carbon film, their derivative etc.
In the middle of them, preferred indole derivatives, carbazole derivates, 7-azaindole derivatives, azepine carbazole derivates, aromatic uncle amine compound, thiophene derivant, the compound that more preferably has indoles skeleton, carbazole skeleton, azaindole skeleton, azepine carbazole skeleton, aromatic nitrile base skeleton in molecule especially preferably has the compound of carbazole skeleton.
In addition, as above-mentioned cavity conveying material of main part, also can use part or all to be replaced into the material of deuterium with the hydrogen of above-mentioned cavity conveying material of main part.
As concrete compound, for example can enumerate following compound, yet be not limited to them as this kind cavity conveying material of main part.
-luminescent material-
Above-mentioned so-called luminescent material is meant the luminescent material of removing with beyond the iridium complex of above-mentioned structural formula (1) expression.
As above-mentioned luminescent material, peak luminous wavelength is preferably 450nm～800nm, and more preferably 460nm～750nm is preferably 470nm～700nm especially.
If above-mentioned peak luminous wavelength less than 450nm, will become than the shorter wavelength of iridium complex with above-mentioned structural formula (1) expression,, will depart from visibility region if surpass 800nm.Above-mentioned peak luminous wavelength can utilize the photoluminescence determination device to measure.And, as above-mentioned peak luminous wavelength, also can be by the luminous peak luminous wavelength that associates.
As above-mentioned luminescent material, so long as peak luminous wavelength is 450nm～800nm, just be not particularly limited, can suitably select according to purpose, for example can enumerate complex compound that contains transition metal atoms, group of the lanthanides atom etc.They both can be used alone or two or more kinds may be used.
As above-mentioned transition metal atoms, for example can enumerate ruthenium, rhodium, palladium, tungsten, rhenium, osmium, iridium, platinum etc.In the middle of them, preferred rhenium, iridium, platinum, preferred especially iridium, platinum.
As above-mentioned group of the lanthanides atom, for example can enumerate lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium etc.In the middle of them, preferred especially neodymium, europium, gadolinium.
Dentate as above-mentioned complex compound, for example can enumerate works such as G.Wilkinson, Comprehensive Coordination Chemistry, Pergamon Press company issued in 1987, the H.Yersin work, the dentate of putting down in writing in the distribution in 1987 of " Photochemistry and Photophysics of Coordination Compounds ", Springer-Verlag company, the bright husband's work in Yamamoto " organometallic chemistry-basis and application-" skirt China room company, the nineteen eighty-two distribution etc.
As above-mentioned dentate, for example can enumerate halogen dentate, aromatic carbon ring dentate, nitrogen heterocyclic ring dentate, diketone dentate, carboxylic acid dentate, alcohol radical dentate, carbon monoxide dentate, isonitrile dentate, cyano group dentate etc.In the middle of them, preferred especially nitrogen heterocyclic ring dentate.
As above-mentioned halogen dentate, for example can enumerate chlorine dentate etc.
As above-mentioned aromatic carbon ring dentate, for example can enumerate cyclopentadienyl anion, benzene anion, naphthyl anion etc.
As above-mentioned nitrogen heterocyclic ring dentate, for example can enumerate phenylpyridine, benzoquinoline, oxyquinoline, bipyridine, phenanthroline etc.
As above-mentioned diketone dentate, for example can enumerate pentanedione etc.
As above-mentioned carboxylic acid dentate, for example can enumerate acetate dentate etc.
As above-mentioned alcohol radical dentate, for example can enumerate phenol dentate etc.
Above-mentioned complex compound both can have 1 transition metal atoms in compound, in addition, also can be the so-called polynuclear complex that has more than 2.Also can contain the different kinds of metals atom simultaneously.In the middle of them,, for example can enumerate following material, yet be not limited to them as luminescent material.
As belonging to the above-mentioned luminescent material that contains the complex compound of iridium, be not particularly limited, can suitably select according to purpose, yet be preferably the compound that reaches any expression in (3) with following general formula (1), (2).
Wherein, in above-mentioned general formula (1), (2) and (3), n represents 1～3 integer.X-Y represents that two nibble dentate.Ring A represents to comprise any one ring structure of nitrogen-atoms, sulphur atom and oxygen atom.R
11The expression substituting group, m1 represents 0～6 integer.Under m1 is situation more than 2, also can be with adjacent R
11Between in conjunction with and form any one the ring can contain nitrogen-atoms, sulphur atom and oxygen atom, this ring also can be substituted the base replacement again.R
12The expression substituting group, m2 represents 0～4 integer.Under m2 is situation more than 2, also can be with adjacent R
12Between in conjunction with and form any one the ring can contain nitrogen-atoms, sulphur atom and oxygen atom, this ring also can be substituted the base replacement again.And, also can be with R
11With R
12Between in conjunction with and form any one the ring can contain nitrogen-atoms, sulphur atom and oxygen atom, this ring also can be substituted the base replacement again.
Above-mentioned ring A represents to contain any one ring structure of nitrogen-atoms, sulphur atom and oxygen atom, can preferably enumerate five-membered ring, hexatomic ring etc.This ring also can be substituted base and replace.
Above-mentioned X-Y represents that two nibble dentate, can preferably enumerate the two single anion dentates of nibbling etc.
As the above-mentioned two single anion dentates of nibbling, for example can enumerate pyridine carboxylic acid root (pic), acetoacetate root (acac), di neo-pentyl formate (tert-butyl group acac) etc.
As the dentate beyond above-mentioned, the world that for example can enumerate Lamansky etc. disclose the dentate of putting down in writing in 89 pages～91 pages of No. 2002/15645 brochure.
As above-mentioned R
11And R
12In substituting group, be not particularly limited, can suitably select according to purpose, for example can represent to contain the aryl of halogen atom, alkoxyl, amino, alkyl, cycloalkyl, nitrogen-atoms, sulphur atom; The aryloxy group that can contain nitrogen-atoms, sulphur atom, they also can be substituted again.
Above-mentioned R
11And R
12Also can combination between adjacent group, formation can contain the ring of nitrogen-atoms, sulphur atom, oxygen atom, can preferably enumerate five-membered ring, hexatomic ring etc.This ring also can be substituted base again and replace.
As concrete compound, for example can enumerate following compound, yet be not limited to them with any one expression in above-mentioned general formula (1), (2) and (3).
[changing 20]
As other examples of above-mentioned luminescent material, can enumerate compound as follows.
As the content (concentration) of above-mentioned luminescent material, the content in the quality of above-mentioned luminescent layer is preferably 0.01 quality %～60 quality %, and more preferably 0.05 quality %～50 quality % are preferably 0.1 quality %～40 quality % especially.
If above-mentioned content less than 0.01 quality %, then owing to can not be luminous fully, therefore has the situation that can't be made as white,, then have the situation that causes the concentration delustring if surpass 60 quality %.
Thickness as above-mentioned luminescent layer is preferably 1nm～100nn, and more preferably 3nm～50nm is preferably 10nm～30nm especially.
If above-mentioned thickness less than 1nm, then can't form as luminescent layer, have the tangible situation of deterioration, if surpass 100nm, then have the extreme situation about rising of voltage on the ground.Above-mentioned thickness can utilize spectrophotometer to measure.
Formation method as above-mentioned luminescent layer, be not particularly limited, can suitably select according to purpose, for example can enumerate resistance heating evaporation, vacuum evaporation, electron beam, sputter, molecule layered manner, cladding process methods such as (spin-coating method, The tape casting, dip coatings etc.).
＜anode 〉
As above-mentioned anode,, just be not particularly limited so long as have as function from the electrode in hole to above-mentioned luminescent layer that supply with.Consider that from the properties of white organic electric-field light-emitting element of the present invention at least one side in preferred above-mentioned anode and the above-mentioned negative electrode is transparent.
As above-mentioned anode, be not particularly limited for its shape, structure, size etc., can from known electrode material, suitably select according to purposes, the purpose of white organic electric-field light-emitting element.
As the material that constitutes above-mentioned anode, for example can enumerate the sandwich of the mixture of conductive metal oxide, metal, these metals and conductive metal oxide or sandwich, inorganic conductive material, organic conductive material, they and ITO etc.
As above-mentioned conductive metal oxide, for example can enumerate the tin oxide (ATO, FTO) that is doped with antimony, fluorine etc., tin oxide, zinc oxide, indium oxide, tin indium oxide (ITO), indium zinc oxide (IZO) etc.
As above-mentioned metal, for example can enumerate gold, silver, chromium, nickel etc.
As above-mentioned inorganic conductive material, for example can enumerate cupric iodide, copper sulfide etc.
As above-mentioned organic conductive material, for example can enumerate polyaniline, polythiophene, polypyrrole etc.
Formation method as above-mentioned anode is not particularly limited, and can carry out according to known method, for example can enumerate wet type mode, the mode of chemistry, the mode of physics etc.
As above-mentioned wet type mode, for example can enumerate mode of printing, coating method etc.
As the mode of above-mentioned chemistry, for example can enumerate CVD, plasma CVD method etc.
As the mode of above-mentioned physics, for example can enumerate vacuum vapour deposition, sputtering method, ion plating method etc.
And, when forming above-mentioned anode, carry out under the situation of pattern processing, both can utilize by the etching of the chemistry of photoetching etc. and undertaken, also can utilize by the etching of the physics of laser etc. and be undertaken, in addition, the mask ground that can also superpose is implemented vacuum evaporation or sputter and is waited and carry out, and can also utilize to peel off (lift-off) method or print process is carried out.
Thickness as above-mentioned anode is not particularly limited, and can suitably select according to material, yet be preferably 10nm～5 μ m, more preferably 50nm～10 μ m.Above-mentioned thickness can utilize the contact pin type explorer to measure.
As the resistance value of above-mentioned anode,, be preferably 10 in order to supply with the hole reliably to luminescent layer etc.
3Below Ω/, more preferably 10
2Below Ω/.
＜negative electrode 〉
As above-mentioned negative electrode,, just be not particularly limited so long as have as the function of in above-mentioned luminescent layer, injecting the electrode of electronics.
As above-mentioned negative electrode, its shape, structure, size etc. are not particularly limited, can from known electrode material, suitably select according to purposes, the purpose of organic electric-field light-emitting element.
As the material that constitutes above-mentioned negative electrode, for example can enumerate the alloy of alkali metal, alkaline-earth metal, rare earth metal, other metals, these metals etc.They can use a kind separately, yet consider from the viewpoint of taking into account stability and electronics injection, preferably rightly also with more than 2 kinds.
As above-mentioned alkali metal, for example can enumerate lithium, sodium etc.
As above-mentioned alkaline-earth metal, can enumerate magnesium, calcium etc.
As above-mentioned other material, for example can enumerate gold, silver, lead, aluminium etc.
As above-mentioned rare earth metal, for example can enumerate indium, ytterbium etc.
As above-mentioned alloy, for example can enumerate sodium-potassium-sodium alloy, lithium-aluminium alloy, magnesium-silver alloy etc.
In the middle of them, consider that preferred as alkali, alkaline-earth metal are considered from the aspect of excellent storage stability, especially preferably contain the material of aluminium from the aspect of electronics injection.The material that above-mentioned what is called contains aluminium is meant, contains aluminium separately, or aluminium and 0.01 quality %～alkali metal of 10 quality % or the alloy of alkaline-earth metal or their mixture (for example lithium-aluminium alloy, magnesium-aluminum alloy etc.).
Formation method as above-mentioned negative electrode is not particularly limited, and can carry out according to known method, for example can enumerate wet type mode, the mode of chemistry, the mode of physics etc.
As above-mentioned wet type mode, for example can enumerate mode of printing, coating method etc.
As the mode of above-mentioned chemistry, for example can enumerate CVD, plasma CVD method etc.
As the mode of above-mentioned physics, for example can enumerate vacuum vapour deposition, sputtering method, ion plating method etc.
And, when forming above-mentioned negative electrode, carry out under the situation of pattern processing, both can utilize by the etching of the chemistry of photoetching etc. and undertaken, also can utilize by the etching of the physics of laser etc. and be undertaken, in addition, the mask ground that can also superpose is implemented vacuum evaporation or sputter and is waited and carry out, and can also utilize the method for peeling off or print process to carry out.
Thickness as above-mentioned negative electrode is preferably 10nm～1000nm, and more preferably 20nm～500nm is preferably 50nm～100nm especially.
The not enough 10nm of the above-mentioned thickness of institute, then oxidation sometimes and produce deterioration, if surpass 1000nm, the radiation heat that produces in the time of then can be owing to film forming produces deterioration.Above-mentioned thickness can utilize the contact pin type explorer to measure.
＜other layer 〉
As white organic electric-field light-emitting element of the present invention, as above-mentioned other the layer, can enumerate hole transporting layer, hole injection layer, electron supplying layer, electron injecting layer, substrate etc.
-hole injection layer, hole transporting layer-
Above-mentioned hole injection layer and hole transporting layer are to have from anode or anode-side to accept the hole and the layer of the function of carrying to cathode side.This hole injection layer and hole transporting layer both can be single layer structures, also can be made up of or the different a plurality of layers of sandwich construction of forming that constitutes same.
As hole-injecting material used in these layers or hole transporting material, both can be low molecular compound, also can be macromolecular compound, in addition, can also be inorganic compound.
As above-mentioned hole-injecting material and hole transporting material, be not particularly limited, can suitably select according to purpose, for example can enumerate Zole derivatives, carbazole derivates, triazole derivative oxazole derivative oxadiazole derivative, imdazole derivatives, polyaryl chain alkane derivatives, pyrazoline derivative, pyrazolone derivative, phenylenediamine derivative, the arylamine derivative, the amino chalcone derivative that replaces, the styryl anthracene derivant, fluorenone derivatives, hydazone derivative, stilbene derivative, the silazane derivative, aromatic uncle amine compound, the styryl amines, aromatic series two methine based compounds, the phthalocyanine based compound, the porphyrin based compound, thiophene derivant, organic silane derivative, carbon, molybdenum trioxide etc.They both can be used alone or two or more kinds may be used.
As above-mentioned hole injection layer and hole transporting layer, can contain electronics acceptance dopant.
As above-mentioned electronics acceptance dopant,, also can be organic compound so long as electronics acceptance and have character with oxidation of organic compounds then both can be an inorganic compound.
As above-mentioned inorganic compound, be not particularly limited, can suitably select according to purpose, for example can enumerate metal halide, metal oxide etc.
As above-mentioned metal halide, for example can enumerate iron chloride, aluminium chloride, gallium chloride, inidum chloride, Antimony pentachloride etc.
As above-mentioned metal oxide, for example can enumerate vanadium pentoxide, molybdenum trioxide etc.
As above-mentioned organic compound, be not particularly limited, can suitably select according to purpose, for example can enumerate compound, quinone based compound, acid anhydrides based compound, fullerene of having nitro, halogen, cyano group, trifluoromethyl etc. as substituting group etc.
These electronics acceptance dopants both can be used alone or two or more kinds may be used.
Use amount as above-mentioned electronics acceptance dopant, according to the kind of material and difference, yet, be preferably 0.01 quality %～50 quality % with respect to hole transporting material or hole-injecting material, more preferably 0.05 quality %～50 quality % are preferably 0.1 quality %～30 quality % especially.
Thickness as above-mentioned hole injection layer and hole transporting layer is preferably 1nm～500nm, and more preferably 5nm～200nm is preferably 10nm～100nm especially.
-electron supplying layer-
Above-mentioned electron supplying layer is to have from negative electrode or cathode side to accept electronics and the layer of the function that anode side is carried, and as mentioned above, the triplet energies of above-mentioned electron supplying layer is preferably greater than the triplet energies of cathode side adjacent layer.
Material as above-mentioned electron supplying layer, be not particularly limited, can suitably select according to purpose, for example can enumerate quinoline, oxadiazole derivative, triazole derivative, phenanthroline derivative, perylene derivative, pyridine derivate, pyrimidine derivatives, quinoxaline derivant, diphenyl quinone derivative, nitro substituted fluorene derivative etc.
As above-mentioned quinoline, for example can enumerate 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (Bathocproin; BCP), in BCP, mixed material, three (oxine) aluminium (Alq) etc. of Li with the oxine or derivatives thereof as the metal-organic complex of dentate, BAlq (two (2-methyl-8-quinoline)-4-(benzene is for phenoxy group)-aluminium (III)) etc.In the middle of them, material, the BAlq of the Li that especially preferably in BCP, mixed.
As the formation method of above-mentioned electron supplying layer, for example can utilize above-mentioned methods such as vapour deposition method, film by wet method, electronic beam method, sputtering method, reactive sputtering method, MBE (molecular beam epitaxy) method, cluster ion beam method, ion plating method, Plasma Polymerization (high frequency excitation ion plating method), molecule layered manner, LB method, print process, transfer printing to form suitably.
Thickness as above-mentioned electron supplying layer is not particularly limited, and can suitably select according to purpose, for example preferred 1nm～500nm, more preferably 10nm～50nm.
Above-mentioned electron supplying layer both can be a single layer structure, also can be stepped construction.
-electron injecting layer-
Above-mentioned electron injecting layer is to have from negative electrode or cathode side to accept electronics and the layer of the function that anode side is carried.
Above-mentioned electron injecting layer both can be the single layer structure that is made of the material more than a kind or 2 kinds, also can be made up of or the different a plurality of layers of sandwich construction of forming that constitutes same.
Thickness as above-mentioned electron injecting layer is not particularly limited, and can suitably select according to purpose, is preferably 0.1nm～200nm, and more preferably 0.2nm～100nm is preferably 0.5nm～50nm especially.
-substrate-
As white organic electric-field light-emitting element of the present invention, preferably to be located on the aforesaid substrate, both form settings that can directly contact with anode and substrate also can be with the form setting of folder every the intermediate layer.
Material as aforesaid substrate is not particularly limited, and can suitably select according to purpose, for example can enumerate inorganic material, organic material etc.
As above-mentioned inorganic material, for example can enumerate yttria-stabilized zirconia (YSZ), alkali-free glass, soda-lime glass etc.
As above-mentioned organic material, for example can enumerate PETG, polybutylene terephthalate (PBT), PEN, polystyrene, Merlon, polyether sulfone, polyarylate, polyimides, poly-cycloolefin, norbornene resin, polychlorotrifluoroethylene etc.
For the shape of aforesaid substrate, structure, size etc., be not particularly limited, can suitably select according to the purposes of light-emitting component, purpose etc.In general, as the shape of substrate, be preferably tabular.
As the structure of aforesaid substrate, both can be single layer structure, also can be stepped construction, in addition, both can form with solid memder, also can form with the member more than 2.Aforesaid substrate both can be transparent, also can be opaque, under transparent situation, both can be water white, also can be colored transparent.
In aforesaid substrate, can be on its surface or the back side anti-soak layer (gas shielding layer) is set.
As the material of above-mentioned anti-soak layer (gas shielding layer), for example can enumerate inorganic matters such as silicon nitride, silica etc.
Above-mentioned anti-soak layer (gas shielding layer) for example can utilize high-frequency sputtering to wait and form.
-electronic barrier layer-
Above-mentioned electronic barrier layer be have prevent from cathode side be transported to luminescent layer the electron leak anode side function the layer, as a rule, with form setting at the anode-side organic compound layer adjacent with luminescent layer.
Compound as constituting above-mentioned electronic barrier layer for example can utilize the compound of enumerating as above-mentioned hole transporting layer material of main part.In addition, above-mentioned electronic barrier layer both can be the single layer structure that constitutes more than a kind or 2 kinds by above-mentioned material, also can be made up of or the different a plurality of layers of sandwich construction of forming that constitutes same.
Formation method as above-mentioned electronic barrier layer is not particularly limited, and can form according to known method, for example can utilize dry type system embrane methods such as vapour deposition method, sputtering method, wet type rubbing method, transfer printing, print process, ink-jetting style etc. to form suitably.
Thickness as above-mentioned electronic barrier layer is preferably 1nm～200nm, and more preferably 1nm～50nm is preferably 3nm～10nm especially.
-protective layer-
White organic electric-field light-emitting element of the present invention also can utilize protective layer with Global Macros.
As material contained in the above-mentioned protective layer; enter the interior materials with function of element so long as have the material of promotion element deteriorations such as suppressing moisture or oxygen; just be not particularly limited; can suitably select according to purpose, for example can enumerate In, Sn, Pb, Au, Cu, Ag, Al, Ti, Ni, MgO, SiO, SiO
2, Al
2O
3, GeO, NiO, CaO, BaO, Fe
2O
3, Y
2O
3, TiO
2, SiNx, SiNxOy, MgF
2, LiF, AlF
3, CaF
2, polyethylene, polypropylene, polymethyl methacrylate, polyimides, polyureas, polytetrafluoroethylene, polychlorotrifluoroethylene, poly-dichloro difluoroethylene, chlorotrifluoroethylene and dichloro difluoroethylene copolymer, make the monomer mixture copolymerization that contains tetrafluoroethene and at least a copolymer and must copolymer, the fluorinated copolymer that in the copolymerization main chain, has circulus, water absorption rate be that water absorption material, water absorption rate more than 1% is the moisture resistance material below 0.1% etc.
Formation method as above-mentioned protective layer; be not particularly limited; can suitably select according to purpose, for example can enumerate vacuum vapour deposition, sputtering method, reactive sputtering method, MBE (molecular beam epitaxy) method, cluster ion beam method, ion plating method, Plasma Polymerization (high frequency excitation ion plating method), plasma CVD method, laser CVD method, hot CVD method, gas source CVD method, cladding process, print process, transfer printing etc.
-airtight container-
As white organic electric-field light-emitting element of the present invention, also can use airtight container with integral sealing.In addition, also can in the space between above-mentioned airtight container and the white organic electric-field light-emitting element, enclose moisture absorber or inert fluid.
As above-mentioned moisture absorber, be not particularly limited, can suitably select according to purpose, for example can enumerate barium monoxide, sodium oxide molybdena, potassium oxide, calcium oxide, sodium sulphate, calcium sulfate, magnesium sulfate, five phosphorous oxide, calcium chloride, magnesium chloride, copper chloride, cerium fluoride, fluoridize niobium, calcium bromide, bromination vanadium, molecular sieve, zeolite, magnesium oxide etc.
As above-mentioned inert fluid, be not particularly limited, can suitably select according to purpose, for example can enumerate paraffin class, atoleine class, fluorine series solvent, chlorine series solvent, silicone oils etc.
-resin-sealed layer-
As white organic electric-field light-emitting element of the present invention, also can suppress the element function deterioration that causes by oxygen or moisture by utilizing resin-sealed layer sealing from atmosphere.
Resin base material as above-mentioned resin-sealed layer is not particularly limited, and can suitably select according to purpose, and for example can enumerate acrylic resin, epoxy resin, fluorine resin, silicone-based resin, rubber is that resin, ester are resin etc.In the middle of them, prevent that from moisture the aspect of function from considering, special preferred epoxy.In the middle of the above-mentioned epoxy resin, preferred thermosetting epoxy resin or light-cured type epoxy resin.
Formation method as above-mentioned resin-sealed layer, be not particularly limited, can suitably select according to purpose, for example can enumerate method, crimping or the thermo-compressed resin sheet of coating resin solution method, utilize evaporation or sputter etc. to carry out method of dry type polymerization etc.
(layer of white organic electric-field light-emitting element constitutes)
Fig. 1 is the skeleton diagram of a layer example that constitutes of expression white organic electric-field light-emitting element of the present invention.As white organic electric-field light-emitting element 10, stack gradually the anode 2, hole injection layer 3, hole transporting layer 4, luminescent layer 5, electron supplying layer 6, electron injecting layer 7, the negative electrode 8 that are formed on the substrate 1 and form.And anode 2 and negative electrode 8 interconnect by power supply.
Embodiment
Below, embodiments of the invention are described, yet the present invention is not subjected to any qualification of these embodiment.
(embodiment 1)
The making of＜white organic electric-field light-emitting element 〉
The glass substrate that thick 0.5mm, 2.5cm is square is put into clean container, in the 2-propyl alcohol, carry out ultrasonic waves for cleaning after, carry out 30 minutes UV-ozone treatment.Using vacuum deposition apparatus (ALS corporate system E-200) to utilize each layer below the vacuum vapour deposition evaporation on this glass substrate.And following embodiment and the vacuum vapour deposition in the comparative example are all carried out under the same conditions, and evaporation rate is 0.2nm/ second under situation about not particularly pointing out.Evaporation rate is to use quartz crystal unit to measure.In addition, the evaporation temperature is 20 ℃, and pressure is 1 * 10
-4Pa.In addition, the thickness of each following layer is to use quartz crystal unit to measure.
At first, on glass substrate, with thickness 100nm sputter ITO (Indium Tin Oxide) is set as anode.
On anode (ITO), by carrying out vacuum evaporation according to the mode that makes thickness reach 120nm, and be formed on following structural formula represent 4,4 '; 4 " the F4-TCNQ that represents with following structural formula of 0.3 quality % has mixed in-three (N, N-(2-naphthyl)-phenyl amino) triphenylamine (2-TNATA).
Then, on hole injection layer,, by carrying out vacuum evaporation, and form the NPD (N, N '-dinaphthyl-N, N '-diphenyl-[1,1 '-xenyl]-4,4 '-diamines) that represents with following structural formula according to the mode that makes thickness reach 7nm as hole transporting layer.
On hole transporting layer,, by carrying out vacuum evaporation, and form the compd A of representing with following structural formula according to the mode that makes thickness reach 3nm as electronic barrier layer.
By carrying out vacuum evaporation, and form the luminescent layer that contains 94.8 quality % as the luminescent material B that sends red light that represents with following structural formula of the luminescent material A that sends green light that represents with following structural formula of the iridium complex A, the 0.1 quality % that represent with following structural formula of the compd B of representing with following structural formula of material of main part and the 5 quality % that in this compd B, mixed and 0.1 quality % according to the mode that makes thickness reach 30nm.Decided the peak luminous wavelength of iridium complex compd A, luminescent material A and luminescent material B with beam split radiance instrumentation, consequently, the peak luminous wavelength of iridium complex A is 443nm, and the peak luminous wavelength of luminescent material A is 530nm, and the peak luminous wavelength of luminescent material B is 622nm.
Then, on luminescent layer,, by carrying out vacuum evaporation, and form the BAlq (two (2-methyl-8-quinoline)-4-(benzene is for phenoxy group)-aluminium (III)) that represents with following structural formula according to the mode that makes thickness reach 30nm as electron supplying layer.
On electron supplying layer,, by according to making thickness reach the mode vacuum evaporation of 1nm, and form lithium fluoride (LiF) as electron injecting layer.
Then, on electron injecting layer, as negative electrode, by the mask (light-emitting zone reaches the mask of 2mm * 2mm) that pattern has been handled is set, and according to making thickness reach the mode vacuum evaporation of 100nm, and form metallic aluminium.
With the glove box that the duplexer that utilizes above operation to make has been put into argon replaces, use the hermetically sealed can of stainless steel and the bonding agent of ultraviolet hardening (XNR5516HV, long rapids Ciba Co., Ltd. system) sealing.Utilize above operation, produce the white organic electric-field light-emitting element of embodiment 1.
(evaluation)
Driving voltage, external quantum efficiency and the colourity of white organic electric-field light-emitting element of embodiment 1 of having estimated made with respect to lily departing from (Δ colourity) as followsly.
＜driving voltage 〉
Use KEITHLEY corporate system Source-Measure Unit 2400 types, the voltage when measuring the direct current energising.
The mensuration of＜external quantum efficiency (EQE) 〉
Use KEITHLEY corporate system Source-Measure Unit 2400 types, the white organic electric-field light-emitting element of embodiment 1 is applied direct current and makes it luminous.Use Topcon corporate system luminance meter BM-8, determine the brightness when luminous.Luminescent spectrum and emission wavelength are to use the luminescent spectrum mensuration system (ELS1500) of Shimadzu Seisakusho Ltd.'s system to measure.Based on these numerical value, utilize the brightness scaling method to calculate external quantum efficiency.
＜depart from (Δ colourity) with respect to lily colourity 〉
Use Dongyang Technica system Source-Measure Unit 2400 types, the white organic electric-field light-emitting element of embodiment 1 is applied the direct current constant voltage and makes it luminous.Measure system (ELS1500) with the luminescent spectrum of Shimadzu Seisakusho Ltd.'s system and measure luminescent spectrum,, use XYZ chromaticity diagram, calculate x value and y value according to the spectrum of gained.
Departing from (Δ colourity) with respect to lily colourity is according to (x=0.33, Δ colourity=(Δ y is calculated in x value y=0.33), the bias of y value (Δ x, Δ y) with respect to pure white
2+ Δ x
2) 0.5.
(embodiment 2)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, iridium complex A is replaced with beyond the iridium complex B that represents with following structural formula, produce the white organic electric-field light-emitting element of embodiment 2 in the same manner with embodiment 1.Utilize luminescent spectrum to measure the peak luminous wavelength that system measurement goes out iridium complex B, consequently 620nm.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
(embodiment 3)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, made beyond the luminescent layer as followsly, produce the white organic electric-field light-emitting element of embodiment 3 in the same manner with embodiment 1.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
The making of-luminescent layer-
According to making thickness reach the mode of 30nm, utilize vacuum vapour deposition, formed the luminescent layer that contains 84.98 quality % as the luminescent material B that sends red light that represents with above-mentioned structural formula of the luminescent material C that sends blue light that represents with following structural formula of the iridium complex A, the 10 quality % that represent with above-mentioned structural formula of the compd B of representing with above-mentioned structural formula of material of main part and the 5 quality % that in this compd B, mixed and 0.02 quality %.And, with the luminescent spectrum peak luminous wavelength of luminescent material C of having measured system measurement, consequently, light blue (474nm), green (502nm), red (590nm) as sub-peak.
(embodiment 4)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, made beyond the luminescent layer as followsly, produce the white organic electric-field light-emitting element of embodiment 4 in the same manner with embodiment 1.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
The making of-luminescent layer-
According to making thickness reach the mode of 50nm, utilize vacuum vapour deposition, formed the luminescent layer that contains 55 quality % as the luminescent material C that represents with above-mentioned structural formula of the iridium complex A, the 40 quality % that represent with above-mentioned structural formula of the compd B of representing with above-mentioned structural formula of material of main part and the 5 quality % that in this compd B, mixed.
(embodiment 5)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 4, will replace with the luminescent material C that above-mentioned structural formula is represented beyond the luminescent material D that represents with following structural formula, produce the white organic electric-field light-emitting element of embodiment 5 in the same manner with embodiment 4.Utilize luminescent spectrum to measure the peak luminous wavelength that system measurement goes out luminescent material D, consequently 446nm.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
(embodiment 6)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 4, will replace with as the compd B of representing with above-mentioned structural formula of material of main part beyond the Compound C of representing with following structural formula, produce the white organic electric-field light-emitting element of embodiment 6 in the same manner with embodiment 4.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
(embodiment 7)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 4, will replace with the iridium complex A that above-mentioned structural formula is represented beyond the iridium complex B that represents with above-mentioned structural formula, produce the white organic electric-field light-emitting element of embodiment 7 in the same manner with embodiment 4.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
(embodiment 8)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, made beyond the luminescent layer as followsly, produce the white organic electric-field light-emitting element of embodiment 8 in the same manner with embodiment 1.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
The making of-luminescent layer-
According to making thickness reach the mode of 30nm, utilize vacuum vapour deposition, formed the luminescent layer that contains 42 quality % as the luminescent material C that represents with above-mentioned structural formula of the iridium complex A that represents with above-mentioned structural formula of the compd B of representing with above-mentioned structural formula of material of main part and the 8 quality % that in this compd B, mixed and 50 quality %.
(comparative example 1)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, made beyond the luminescent layer as followsly, produce the white organic electric-field light-emitting element of comparative example 1 in the same manner with embodiment 1.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
The making of-luminescent layer-
According to making thickness reach the mode of 30nm, utilize vacuum vapour deposition, formed the luminescent layer that contains 84.8 quality % as the luminescent material B that represents with above-mentioned structural formula of the luminescent material A that represents with above-mentioned structural formula of the luminescent material C, the 0.1 quality % that represent with above-mentioned structural formula of the compd B of representing with above-mentioned structural formula of material of main part and the 15 quality % that in this compd B, mixed and 0.1 quality %.
(comparative example 2)
The making of＜white organic electric-field light-emitting element 〉
Except in embodiment 1, will replace with the iridium complex A that above-mentioned structural formula is represented beyond the luminescent material D that represents with above-mentioned structural formula, produce the white organic electric-field light-emitting element of comparative example 2 in the same manner with embodiment 1.
With embodiment 1 in the same manner, estimated the driving voltage, external quantum efficiency of the white organic electric-field light-emitting element of made, with respect to depart from (the Δ colourity) of lily colourity.
To the white organic electric-field light-emitting element of making in embodiment 1～8 and the comparative example 1～2, evaluation result and element formation that driving voltage, external quantum efficiency and colourity are changed are shown in table 1～table 2.
[table 1]
[table 1]
(in the table, " wt% " expression quality %.(x is that current density is 11.6mA/cm y) for voltage, EQE (external quantum efficiency), cie color
2Value.)
[table 2]
[table 2]
(in the table, " wt% " expression quality %.(x is that current density is 11.6mA/cm y) for voltage, EQE (external quantum efficiency), cie color
2Value.)
Therefore white organic electric-field light-emitting element of the present invention for example goes for display element, display, backlight, electronic photo, lighting source, recording light source, exposure light source, reads in light source, sign, signboard, indoor appliances, the optical communication etc. owing to can realize the raising of low-voltage, luminous efficiency, the adjustment of color balance.
Claims (8)
1. a white organic electric-field light-emitting element is characterized in that, is the white organic electric-field light-emitting element that has luminescent layer between anode and negative electrode at least,
Described luminescent layer contains the iridium complex with following structural formula (1) expression,
Wherein, in the described structural formula (1), A represents-C (R
4)-or-N-; B represents-C (R
7)-or-N-; R
1～R
7Independent separately, expression hydrogen atom, cyano group, hydroxyl, nitro, halogen atom, carbon number are that 1～20 alkyl, carbon number are that 1～20 alkoxyl, carbon number are that 6～20 aryl, carbon number are that 7～20 aralkyl, carbon number are that 2～20 alkyl alkoxy, carbon number are that 7～20 alkoxy aryl, carbon number are that 6～20 arylamino, carbon number are that 1～20 alkyl amino, carbon number are that 1～20 dialkyl amido, carbon number are 2～20 heterocyclic radical; R
4With R
5, R
4With R
6Can link mutually and form saturated or undersaturated carbocyclic ring, saturated or undersaturated heterocycle; X represents that 1 valency anionic property two nibbles dentate; M represents 2 or 3, and n represents 0 or 1, and m and n sum are 3.
2. white organic electric-field light-emitting element according to claim 1 is characterized in that, luminescent layer also contain can be luminous luminescent material.
3. white organic electric-field light-emitting element according to claim 2 is characterized in that, luminescent material is at least a luminescent material that is selected from platinum complex luminescent material, the iridium complex luminescent material.
4. white organic electric-field light-emitting element according to claim 2 is characterized in that, the content of luminescent material is 0.01 quality %～60 quality % with respect to luminescent layer.
5. white organic electric-field light-emitting element according to claim 2 is characterized in that, the peak luminous wavelength of luminescent material is 400nm～800nm.
6. white organic electric-field light-emitting element according to claim 1 is characterized in that, the content of iridium complex compound in luminescent layer is 1 quality %～50 quality %.
7. white organic electric-field light-emitting element according to claim 1 is characterized in that the iridium complex compound is luminous under the peak luminous wavelength of the blueness of 400nm～450nm.
8. white organic electric-field light-emitting element according to claim 1 is characterized in that luminescent layer also contains material of main part.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-073235 | 2010-03-26 | ||
| JP2010073235A JP5912224B2 (en) | 2010-03-26 | 2010-03-26 | White organic electroluminescence device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102201542A true CN102201542A (en) | 2011-09-28 |
| CN102201542B CN102201542B (en) | 2016-12-21 |
Family
ID=44662054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110076688.8A Active CN102201542B (en) | 2010-03-26 | 2011-03-25 | White organic electric field luminous |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5912224B2 (en) |
| KR (2) | KR20110108270A (en) |
| CN (1) | CN102201542B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006435A (en) * | 2015-07-21 | 2015-10-28 | 苏州大学 | Preparation method of hole transport layer for semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102511544B1 (en) | 2015-11-20 | 2023-03-17 | 삼성디스플레이 주식회사 | Opto-electronic element and method for manufacturing the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050170209A1 (en) * | 2004-02-02 | 2005-08-04 | Seok-Jong Lee | Ir compound and organic electroluminescent device using the same |
| CN1840607A (en) * | 1999-12-01 | 2006-10-04 | 普林斯顿大学理事会 | Complexes of form l2mx as phosphorescent dopants for organic LEDs |
| JP2007161673A (en) * | 2005-12-16 | 2007-06-28 | National Institute Of Advanced Industrial & Technology | Fluorine-substituted iridium complex and light-emitting material using the same |
| JP2008108617A (en) * | 2006-10-26 | 2008-05-08 | Fujifilm Corp | Organic electroluminescent element |
| CN101469003A (en) * | 2007-12-24 | 2009-07-01 | 比亚迪股份有限公司 | Metal organic complexes, preparation thereof, luminescent material and luminescent device |
| JP2010045281A (en) * | 2008-08-18 | 2010-02-25 | Konica Minolta Holdings Inc | Organic electroluminescent element material, organic electroluminescent element, display, and lighting system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7576486B2 (en) * | 2004-04-02 | 2009-08-18 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element having two electroluminescent layers through electron barrier layer |
| JP2006182921A (en) * | 2004-12-28 | 2006-07-13 | Konica Minolta Holdings Inc | Material for organic el element, organic el element, display device and lighting device |
| JP2007059119A (en) * | 2005-08-23 | 2007-03-08 | Konica Minolta Holdings Inc | Organic electroluminescence element and organic electroluminescence display |
| JP5243972B2 (en) * | 2008-02-28 | 2013-07-24 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
| JP5357579B2 (en) * | 2008-03-21 | 2013-12-04 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
| US20110260141A1 (en) * | 2009-10-29 | 2011-10-27 | E.I. Du Pont De Nemours And Company | Organic light-emitting diode luminaires |
| US20110266524A1 (en) * | 2009-10-29 | 2011-11-03 | E. I. Du Pont De Nemours And Company | Organic light-emitting diode luminaires |
-
2010
- 2010-03-26 JP JP2010073235A patent/JP5912224B2/en active Active
-
2011
- 2011-03-21 KR KR1020110024888A patent/KR20110108270A/en not_active Application Discontinuation
- 2011-03-25 CN CN201110076688.8A patent/CN102201542B/en active Active
-
2018
- 2018-07-24 KR KR1020180086003A patent/KR101989746B1/en active IP Right Grant
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1840607A (en) * | 1999-12-01 | 2006-10-04 | 普林斯顿大学理事会 | Complexes of form l2mx as phosphorescent dopants for organic LEDs |
| US20050170209A1 (en) * | 2004-02-02 | 2005-08-04 | Seok-Jong Lee | Ir compound and organic electroluminescent device using the same |
| JP2007161673A (en) * | 2005-12-16 | 2007-06-28 | National Institute Of Advanced Industrial & Technology | Fluorine-substituted iridium complex and light-emitting material using the same |
| JP2008108617A (en) * | 2006-10-26 | 2008-05-08 | Fujifilm Corp | Organic electroluminescent element |
| CN101469003A (en) * | 2007-12-24 | 2009-07-01 | 比亚迪股份有限公司 | Metal organic complexes, preparation thereof, luminescent material and luminescent device |
| JP2010045281A (en) * | 2008-08-18 | 2010-02-25 | Konica Minolta Holdings Inc | Organic electroluminescent element material, organic electroluminescent element, display, and lighting system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006435A (en) * | 2015-07-21 | 2015-10-28 | 苏州大学 | Preparation method of hole transport layer for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011205027A (en) | 2011-10-13 |
| KR101989746B1 (en) | 2019-06-14 |
| KR20110108270A (en) | 2011-10-05 |
| KR20180089883A (en) | 2018-08-09 |
| CN102201542B (en) | 2016-12-21 |
| JP5912224B2 (en) | 2016-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI395510B (en) | Blue light emitting organic electroluminescent components | |
| US9070884B2 (en) | Hybrid OLED having phosphorescent and fluorescent emitters | |
| JP4620802B1 (en) | Organic electroluminescence device | |
| KR101668044B1 (en) | Oled with high efficiency blue light-emitting layer | |
| EP2549837B1 (en) | Method for producing organic electroluminescence element | |
| JP2006351638A (en) | Light emitting device | |
| JP2010171205A (en) | Organic electric field light-emitting element | |
| JP2008091860A (en) | Organic electroluminescent element, and display unit | |
| CN102893423B (en) | Organnic electroluminescent device and manufacture method thereof | |
| CN102484208B (en) | Organic electroluminescent element and method for manufacturing same | |
| JP5497510B2 (en) | Organic electroluminescence device | |
| TWI400988B (en) | Organic electroluminescent elements | |
| JP5572004B2 (en) | White organic electroluminescence device | |
| JP5649327B2 (en) | Organic electroluminescence device | |
| JP5761962B2 (en) | Organic electroluminescence device | |
| KR101989746B1 (en) | White organic electroluminescence element | |
| Peng et al. | Highly efficient phosphorescent organic light-emitting diodes using a beryllium metal–chelate complex as electron-transporting host material | |
| JP4603624B1 (en) | Organic electroluminescence device | |
| JP5511454B2 (en) | Organic electroluminescence device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: UDC IRELAND LIMITED Free format text: FORMER OWNER: FUJIFILM CORPORATION Effective date: 20121218 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20121218 Address after: Dublin, Ireland Applicant after: UDC?IRELAND?LIMITED Address before: Tokyo, Japan Applicant before: Fuji Film Corp. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |