CN105006435A - Preparation method of hole transport layer for semiconductor device - Google Patents
Preparation method of hole transport layer for semiconductor device Download PDFInfo
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- CN105006435A CN105006435A CN201510429332.6A CN201510429332A CN105006435A CN 105006435 A CN105006435 A CN 105006435A CN 201510429332 A CN201510429332 A CN 201510429332A CN 105006435 A CN105006435 A CN 105006435A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000005525 hole transport Effects 0.000 title abstract 3
- 239000000463 material Substances 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 33
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims abstract description 21
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 51
- 238000001704 evaporation Methods 0.000 claims description 27
- 230000008020 evaporation Effects 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 4
- 239000013590 bulk material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000010549 co-Evaporation Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000007738 vacuum evaporation Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000008364 bulk solution Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 238000010025 steaming Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of a hole transport layer for a semiconductor device, which is characterized by comprising the following first steps of: coating a main body material on the ITO transparent conductive substrate by a vacuum thermal evaporation method or a spin coating method, wherein the main body material is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD; the second step is that: and coating a guest material on the surface of the host material in the first step by a vacuum thermal evaporation method or a spin coating method to obtain the preparation method of the hole transport layer for the semiconductor device, wherein the guest material is F2-HCNQ or F4-TCNQ. The preparation method provided by the invention enables the guest material which is originally required to be doped by co-evaporation to enter the host material through drifting, thereby achieving the doping effect.
Description
Technical field
The invention belongs to field of semiconductor devices, particularly relate to a kind of preparation method of the hole transmission layer for semiconductor device.
Background technology
In semiconductor device particularly organic semiconductor device, the energy extreme difference between each layer is very large, the energy extreme difference particularly between electrode and organic interface.Injection barrier between ITO and hole transmission layer makes the operating voltage of device very large, and efficiency is very low.Therefore, usually need in device fabrication process, by using doping techniques to reduce injection barrier in hole transmission layer, to improve the charge mobility of transport layer, thus realize the making of low-voltage, high efficiency, long lived devices.Traditional way generally steams by vacuum vapour deposition the film that subject and object dopant material deposition obtains doping altogether.Vacuum vapour deposition needs the evaporation rate of control subject and guest materials simultaneously, and this control is difficult to grasp, and the process of controlled doping ratio wastes material very much.Steaming altogether doping is a kind of not only having expended time in but also the method for consume material, can bring very large trouble in the industrial production.
Summary of the invention
the technical problem solved:for the existing shortcoming of steaming doping method altogether and existing, the invention provides a kind of preparation method of the hole transmission layer for semiconductor device, the method makes originally to need to be entered in material of main part by drift by the common guest materials steaming doping, thus reaches the effect of doping.
technical scheme:for a preparation method for the hole transmission layer of semiconductor device, preparation process is as follows:
The first step: deposited by vacuum thermal evaporation on ITO transparent conductive substrate or spin-coating method coated subject material;
Second step: deposited or spin-coating method coating guest materials by vacuum thermal evaporation at the bulk material surface of the first step, obtain the preparation method of the hole transmission layer for semiconductor device.
Material of main part described above is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD.
Guest materials described above is F2-HCNQ or F4-TCNQ.
In the first step described above, the condition of vacuum thermal evaporation is: chamber vacuum degree≤1 × 10
-4pa, evaporation rate is 0.3 nm/s, and evaporation thickness is 40 nm.
In second step described above, the condition of vacuum thermal evaporation is: chamber vacuum degree≤1 × 10
-4pa, evaporation rate is 0.03 nm/s, and evaporation thickness is 2 nm.
In the first step described above and second step, the process of spin-coating method coating is carried out under the condition of anhydrous and oxygen-free.
In second step described above, in the process with vacuum thermal evaporation deposition guest materials, guest materials enters in material of main part by warm-up movement, thus reaches and steam same doping effect altogether.
In second step described above, in the process with spin-coating method coating guest materials, carry out annealing in process, guest materials utilizes warm-up movement to enter in material of main part, thus reaches and steam same doping effect altogether.
Link prepared by device after the hole transmission layer that the method prepares also can be used for, or other purposes.
beneficial effect:the preparation method of a kind of hole transmission layer for semiconductor device provided by the invention, has the following advantages:
1. manufacture method of the present invention is simple and convenient, and equipment requirement is low, and film is easy to make, reproducible;
2. preparation method of the present invention can be applied to the doping of the material of some difficult co-evaporation;
3. the preparation method steamed by non-co-of the present invention's proposition, reach the effect of doping, achieve the doping for different transport layer, be conducive to reducing the energy level potential barrier between transport layer and electrode, improve injection and the transmission of charge carrier, the hole transmission layer prepared has good charge injection and transmittability.
Accompanying drawing explanation
Fig. 1 is the hole transmission layer (NPB/F4-TCNQ) for preparing of embodiment 1 and hole transmission layer (the NPB:HATCN 5 vol.%) design sketch when reducing device operating voltages that adulterates in conventional monolayers hole transmission layer (NPB) and comparative example 1.As can be seen from the figure, when drive current is identical, hole transmission layer of the present invention (NPB/F4-TCNQ) has lower driving voltage (such as at current density 20 mA/cm
2time, NPB, NPB:HATCN 5 the driving voltage of vol.% and NPB/F4-TCNQ be respectively 6.2 V, 6.1 V and 5.6 V), be conducive to reducing the energy level potential barrier between transport layer and electrode, improve injection and the transmission of charge carrier.Device architecture is ITO/ hole transmission layer/luminescent layer/electron transfer layer/electron injecting layer/Al electrode.
Fig. 2 is the hole transmission layer (Poly-TPD/F4-TCNQ) for preparing of embodiment 3 and conventional monolayers hole transmission layer (Poly-TPD) design sketch when reducing device operating voltages.As can be seen from the figure, when drive current is identical, hole transmission layer of the present invention (Poly-TPD/F4-TCNQ) has lower driving voltage (such as at current density 20 mA/cm
2time, the driving voltage of Poly-TPD and Poly-TPD/F4-TCNQ is respectively 9.7 V and 8.9 V), thus be conducive to reducing the energy level potential barrier between transport layer and electrode, improve injection and the transmission of charge carrier.Device architecture is ITO/ hole transmission layer/luminescent layer/electron transfer layer/electron injecting layer/Al electrode.
Fig. 3 is the hole transmission layer (m-MTDATA/F4-TCNQ) for preparing of embodiment 5 and conventional monolayers hole transmission layer (m-MTDATA) design sketch when reducing device operating voltages.As can be seen from the figure, when drive current is identical, hole transmission layer of the present invention (m-MTDATA/F4-TCNQ) has lower driving voltage (such as at current density 20 mA/cm
2time, the driving voltage of m-MTDATA and m-MTDATA/F4-TCNQ is respectively 6.3 V and 5.5 V), thus be conducive to reducing the energy level potential barrier between transport layer and electrode, improve injection and the transmission of charge carrier.Device architecture is ITO/ hole transmission layer/luminescent layer/electron transfer layer/electron injecting layer/Al electrode.
Embodiment
Material of main part used in following examples and guest materials are all purchased from Lumtec company.
embodiment 1
For a preparation method for the hole transmission layer of semiconductor device, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: by method deposit host material NPB on ITO transparent conductive substrate of vacuum evaporation, concrete grammar is that material of main part NPB is placed in quartz boat, by electric-heating-wire-heating quartz boat, the NPB in quartz boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, start deposit host material, control evaporation rate is 0.3nm/s, and evaporation thickness is 40nm;
3rd step: guest materials F4-TCNQ is deposited on material of main part NPB surface by the method for evaporation, concrete grammar is that guest materials F4-TCNQ is placed in quartz boat, by electric-heating-wire-heating quartz boat, the F4-TCNQ in quartz boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, start to deposit guest materials, controlling evaporation rate is 0.03 nm/s, and evaporation thickness is 2nm, namely obtains the hole transmission layer for semiconductor device after deposition terminates.
In the process of vacuum evaporation, guest materials F4-TCNQ enters in material of main part by warm-up movement, thus forms the hole transmission layer of doping.Concrete effect is as shown in Fig. 1 curve N PB/F4-TCNQ.
embodiment 2
For a preparation method for the hole transmission layer of semiconductor device, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: be dissolved in chloroform by material of main part NPB, uses magneton to stir, leaves standstill more than 1h until completely dissolved, be configured to the bulk solution that concentration is 9g/mL;
3rd step: be dissolved in acetone by guest materials F4-TCNQ, uses magneton to stir, leaves standstill more than 1h until completely dissolved, be configured to the object solution that concentration is 2g/mL;
4th step: ITO transparent conductive substrate to be coated is positioned over ozone treatment 10min in UV ozone machine, then ITO transparent conductive substrate surface is coated on the bulk solution prepared in advance uniformly by the method for rotary coating, concrete grammar first under the rotating speed of 500 rpm, rotates 10s, then 50s is rotated under accelerating to the rotating speed of 4500rpm, leave standstill 60s, now ITO transparent conductive substrate surface has formed one deck host film;
5th step: be coated on host film surface uniformly by the method for rotary coating with the object solution prepared in advance, concrete grammar first under the rotating speed of 2000 rpm, rotates 5s, then 50s is rotated under accelerating to the rotating speed of 6000rpm, leave standstill 20s, now host film surface has formed one deck object film;
6th step: be positioned on heating station by the whole ITO transparent conductive substrate after the 5th step, anneals at temperature is 60 DEG C, keeps 10min, obtains the hole transmission layer for semiconductor device.
In the process of annealing, the molecule in object film will be entered in host film by warm-up movement, thus form the hole transmission layer of host-guest system.
embodiment 3
For a preparation method for the hole transmission layer of semiconductor device, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: be dissolved in chloroform by material of main part Poly-TPD, uses magneton to stir, leaves standstill more than 1h until completely dissolved, be configured to the bulk solution that concentration is 8 g/mL;
3rd step: be dissolved in acetone by guest materials F4-TCNQ, uses magneton to stir, leaves standstill more than 1h until completely dissolved, be configured to the object solution that concentration is 2g/mL;
4th step: ITO transparent conductive substrate to be coated is positioned over ozone treatment 10min in UV ozone machine, then substrate surface is coated on the bulk solution prepared in advance uniformly by the method for rotary coating, concrete grammar first under the rotating speed of 500 rpm, rotates 10s, then 50s is rotated under accelerating to the rotating speed of 4000rpm, leave standstill 60s, now substrate surface has formed one deck host film;
5th step: be coated on host film surface uniformly by the method for rotary coating with the object solution prepared in advance, concrete grammar first under the rotating speed of 2000 rpm, rotates 5s, then 50s is rotated under accelerating to the rotating speed of 6000rpm, leave standstill 20s, now host film surface has formed one deck object film;
6th step: be positioned on heating station by the whole ITO transparent conductive substrate after the 5th step, anneals at temperature is 60 DEG C, keeps 10min, obtains the hole transmission layer for semiconductor device.
In the process of annealing, the molecule in object film will be entered in host film by warm-up movement, thus form the hole transmission layer of host-guest system.Concrete effect as shown in Figure 2.
embodiment 4
For a preparation method for the hole transmission layer of semiconductor device, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: by method deposit host material 2-TNATA on ITO transparent conductive substrate of vacuum evaporation, concrete grammar is that material of main part 2-TNATA is placed in quartz boat, by electric-heating-wire-heating quartz boat, the 2-TNATA in quartz boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, start deposit host material, controlling evaporation rate is 0.3 nm/s, and evaporation thickness is 40 nm;
3rd step: guest materials F2-HCNQ is deposited on material of main part 2-TNATA surface by the method for evaporation, concrete grammar is that guest materials is placed in quartz boat, by electric-heating-wire-heating quartz boat, the organic material in boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, can start to deposit guest materials, controlling evaporation rate is 0.03 nm/s, evaporation thickness 2 nm, namely obtains the hole transmission layer for semiconductor device after deposition terminates.
In the process of vacuum evaporation, guest materials F2-HCNQ enters in material of main part by warm-up movement, thus forms the hole transmission layer of doping.
embodiment 5
For a preparation method for the hole transmission layer of semiconductor device, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: by method deposit host material m-MTDATA on ITO transparent conductive substrate of vacuum evaporation, concrete grammar is that material of main part m-MTDATA is placed in quartz boat, by electric-heating-wire-heating quartz boat, the organic material in quartz boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, start deposit host material, control evaporation rate is 0.3nm/s, and evaporation thickness is 40nm;
3rd step: guest materials F4-TCNQ is deposited on material of main part m-MTDATA surface by the method for evaporation, concrete grammar is that guest materials is placed in quartz boat, by electric-heating-wire-heating quartz boat, the organic material in quartz boat is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, start to deposit guest materials, control evaporation rate is 0.03nm/s, and evaporation thickness is 2nm, namely obtains the hole transmission layer for semiconductor device after deposition terminates.
In the process of vacuum evaporation, guest materials F4-TCNQ enters in material of main part m-MTDATA by warm-up movement, thus forms the hole transmission layer of doping.Concrete effect as shown in Figure 3.
comparative example 1
a preparation method for the hole transmission layer of doping, concrete preparation process is as follows:
The first step: ITO transparent conductive substrate is adopted successively deionized water, absolute ethyl alcohol and acetone ultrasonic cleaning 10min, then use tweezers chucking substrate, uses N
2rifle dries up the moisture of substrate surface, faces up afterwards, puts into the culture dish cleaning oven dry and preserves;
Second step: by method dopant deposition hole transmission layer on ITO transparent conductive substrate of vacuum evaporation, concrete grammar is that material of main part NPB and guest materials HATCN is placed in different quartz boats respectively, by electric-heating-wire-heating quartz boat, material of main part NPB in quartz boat and guest materials HATCN is evaporated, in chamber vacuum degree≤1 × 10
-4during Pa, preheating material of main part NPB and guest materials HATCN simultaneously, the evaporation rate of control subject material NPB is 0.3nm/s, the evaporation rate controlling guest materials HATCN is 0.015nm/s, material of main part NPB and guest materials HATCN is mixed with object dopant ratio 5 vol.%, after treating rate stabilization, starts deposition, evaporation thickness 40nm, can obtain the hole transmission layer of doping.Concrete effect is as shown in Fig. 1 curve N PB:HATCN 5 vol.%.
Claims (5)
1., for a preparation method for the hole transmission layer of semiconductor device, it is characterized in that preparation process is as follows:
The first step: deposited by vacuum thermal evaporation on ITO transparent conductive substrate or spin-coating method coated subject material, wherein material of main part is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD;
Second step: deposited or spin-coating method coating guest materials by vacuum thermal evaporation at the bulk material surface of the first step, obtain the preparation method of the hole transmission layer for semiconductor device, wherein guest materials is F2-HCNQ or F4-TCNQ.
2. the preparation method of a kind of hole transmission layer for semiconductor device according to claim 1, is characterized in that the condition of vacuum thermal evaporation in the described first step is: chamber vacuum degree≤1 × 10
-4pa, evaporation rate is 0.3 nm/s, and evaporation thickness is 40 nm.
3. the preparation method of a kind of hole transmission layer for semiconductor device according to claim 1, is characterized in that the condition of vacuum thermal evaporation in described second step is: chamber vacuum degree≤1 × 10
-4pa, evaporation rate is 0.03 nm/s, and evaporation thickness is 2 nm.
4. the preparation method of a kind of hole transmission layer for semiconductor device according to claim 1, is characterized in that: in the described first step and second step, the process of spin-coating method coating is carried out under the condition of anhydrous and oxygen-free.
5. the preparation method of a kind of hole transmission layer for semiconductor device according to claim 1, is characterized in that: in described second step, spin-coating method is coated with in the process of guest materials and carries out annealing in process.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552242A (en) * | 2016-01-29 | 2016-05-04 | 苏州大学 | Preparation method of double-charge injection layer for semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090218936A1 (en) * | 2008-02-28 | 2009-09-03 | Fujifilm Corporation | Organic electroluminescence element |
| CN102201542A (en) * | 2010-03-26 | 2011-09-28 | 富士胶片株式会社 | White organic electric field luminous element |
| CN102916132A (en) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | White-light organic electroluminescence device and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090218936A1 (en) * | 2008-02-28 | 2009-09-03 | Fujifilm Corporation | Organic electroluminescence element |
| CN102201542A (en) * | 2010-03-26 | 2011-09-28 | 富士胶片株式会社 | White organic electric field luminous element |
| CN102916132A (en) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | White-light organic electroluminescence device and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552242A (en) * | 2016-01-29 | 2016-05-04 | 苏州大学 | Preparation method of double-charge injection layer for semiconductor device |
| CN105552242B (en) * | 2016-01-29 | 2017-05-03 | 苏州大学 | Preparation method of double-charge injection layer for semiconductor device |
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