CN105552242A - Preparation method of double-charge injection layer for semiconductor device - Google Patents
Preparation method of double-charge injection layer for semiconductor device Download PDFInfo
- Publication number
- CN105552242A CN105552242A CN201610062055.4A CN201610062055A CN105552242A CN 105552242 A CN105552242 A CN 105552242A CN 201610062055 A CN201610062055 A CN 201610062055A CN 105552242 A CN105552242 A CN 105552242A
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- solution
- preparation
- double
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000002347 injection Methods 0.000 title abstract description 14
- 239000007924 injection Substances 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000000243 solution Substances 0.000 claims abstract description 37
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000007864 aqueous solution Substances 0.000 claims abstract description 16
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims abstract description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 15
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 238000002513 implantation Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 230000009977 dual effect Effects 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract 2
- 238000004090 dissolution Methods 0.000 abstract 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- CINYXYWQPZSTOT-UHFFFAOYSA-N 3-[3-[3,5-bis(3-pyridin-3-ylphenyl)phenyl]phenyl]pyridine Chemical compound C1=CN=CC(C=2C=C(C=CC=2)C=2C=C(C=C(C=2)C=2C=C(C=CC=2)C=2C=NC=CC=2)C=2C=C(C=CC=2)C=2C=NC=CC=2)=C1 CINYXYWQPZSTOT-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
The invention provides a preparation method of a double-charge injection layer for a semiconductor device, which comprises the following steps: mixing HAT-CN and F4-TCNQ in a mass ratio of 1 (2-6) and dissolving in acetone to obtain a solution A after complete dissolution; mixing CuPc and MoO3Respectively dissolving the raw materials in water to prepare aqueous solutions, respectively stirring the aqueous solutions in an atmospheric environment, and mixing the aqueous solutions according to a volume ratio of 1:1 to obtain a solution B; carrying out ozone treatment on a substrate to be coated, then coating the solution A on the surface of the substrate, and annealing at the temperature of 60 ℃ for 15min, wherein an oily film is formed on the surface of the substrate; and coating the solution B on the surface of the oily film, and annealing at the temperature of 150 ℃ for 15min, wherein an electric double injection layer for a semiconductor device is formed on the surface of the ITO substrate. The preparation method has the advantages of simple and convenient preparation process, low equipment requirement, capability of performing preparation operation under atmospheric conditions and low cost.
Description
Technical field
The invention belongs to technical field of semiconductor device, particularly relate to a kind of preparation method of the Double-charge implantation layer for semiconductor device.
Background technology
In the preparation of organic semiconductor function element, how to improve the work function of substrate surface, thus reduce the potential barrier injected in hole, be all the hot issue of research all the time.Traditional way is all realize this purpose by preparation transition metal oxide film, and take the mode of vacuum evaporation to complete the deposition of film often, but this kind of requirement of membrane deposition method to equipment is high, energy consumption is large, stock utilization is low, human users requires harshness, and simultaneously this kind of method has limited to preparation and the development of the practical device of large area organic semiconductor.Along with the fast development of organic semiconductor device preparation technology, the technique of its wet-layer preparation is arisen at the historic moment.But also still there is a lot of problem in the method that this kind prepares organic semiconductor device, and the problem of dissolving each other when wherein most problem demanding prompt solution is exactly the preparation of adjacent organic thin film layer.
The present invention's design have employed the mode of oily solution rotary coating film forming alternate with aqueous solution rotary coating, forms Double-charge implantation layer, solves many weak points of above-mentioned existence.
Summary of the invention
the technical problem solved:the shortcoming high for the requirement of existing membrane deposition method to equipment, energy consumption is large, stock utilization is low and adjacent organic thin film layer easily dissolves each other, the invention provides a kind of preparation method of the Double-charge implantation layer for semiconductor device.
technical scheme:for a preparation method for the Double-charge implantation layer of semiconductor device, the step of the method is as follows:
(1) by HAT-CN and F4-TCNQ with mass ratio be 1:(2-6) ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1-2h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(2) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1-2h, obtain solution B, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(3) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (1) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film;
(4) solution B obtained in step (2) is coated on by the method for rotary coating the oiliness film surface that the 3rd step obtains uniformly, and the 15min that anneals at the temperature of 150 DEG C, now ITO substrate surface defines the film of oiliness-water-based Dual Implantations layer, is the Double-charge implantation layer for semiconductor device.
In step (1) described above by HAT-CN and F4-TCNQ with mass ratio be 1:4 ratio mixing be dissolved in acetone.
After dissolving completely in step (1) described above, time of repose is 1.5h.
In step (2) described above, time of repose is 1.5h.
Substrate in step (3) described above is monocrystalline silicon substrate or ito glass substrate.
beneficial effect:the preparation method of a kind of Double-charge implantation layer for semiconductor device provided by the invention, has following beneficial effect:
1. manufacture craft of the present invention is simple and convenient, and equipment requirement is low, can be prepared operation in atmospheric conditions, needn't adopt expensive vacuum evaporation equipment, with low cost, greatly reduces the production cost of semiconductor device, is convenient to the large-scale manufacturing;
2. the present invention adopts water as solvent, and environmental protection is pollution-free, meets environmentally friendly material preparation process;
3. the material dissolves that the present invention is used is strong, and film thickness regulates and controls by the factor such as speed, time of solution concentration, rotary coating, uniformity and planarization good, film quality is high, effectively can modify substrate surface defect;
4. the two hole injection layer of the present invention's oiliness-water-based used, substantially increase the injection efficiency in hole, and oiliness implanted layer and luminescent layer is effectively separated by water-based implanted layer, solves solwution method cleverly and prepares the problem of dissolving each other easily produced in semiconductor device.
Accompanying drawing explanation
Fig. 1 is the voltage-current density curve chart of OLED prepared by the electric charge injection layer adopting embodiment 1, comparative example 1 and comparative example 2 to prepare.
Fig. 2 is the voltage-brightness curve chart of OLED prepared by the electric charge injection layer adopting embodiment 1, comparative example 1 and comparative example 2 to prepare.
Fig. 3 is the current density-current efficiency curve chart of OLED prepared by the electric charge injection layer adopting embodiment 1, comparative example 1 and comparative example 2 to prepare.
Fig. 4 is the current density-power efficiency curve chart of OLED prepared by the electric charge injection layer adopting embodiment 1, comparative example 1 and comparative example 2 to prepare.
Embodiment
embodiment 1
For a preparation method for the Double-charge implantation layer of semiconductor device, the step of the method is as follows:
(1) ito glass substrate is carried out standardization cleaning;
(2) by HAT-CN and F4-TCNQ with mass ratio be 1:4 ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1.5h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(3) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1.5h, obtain solution B, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(4) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (2) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film;
(5) solution B obtained in step (3) is coated on by the method for rotary coating the oiliness film surface that the 3rd step obtains uniformly, and the 15min that anneals at the temperature of 150 DEG C, now ITO substrate surface defines the film of oiliness-water-based Dual Implantations layer, is the Double-charge implantation layer for semiconductor device.
embodiment 2
For a preparation method for the Double-charge implantation layer of semiconductor device, the step of the method is as follows:
(1) ito glass substrate is carried out standardization cleaning;
(2) by HAT-CN and F4-TCNQ with mass ratio be 1:2 ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1.5h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(3) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1.5h, obtain solution B, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(4) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (2) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film;
(5) solution B obtained in step (3) is coated on by the method for rotary coating the oiliness film surface that the 3rd step obtains uniformly, and the 15min that anneals at the temperature of 150 DEG C, now ITO substrate surface defines the film of oiliness-water-based Dual Implantations layer, is the Double-charge implantation layer for semiconductor device.
embodiment 3
For a preparation method for the Double-charge implantation layer of semiconductor device, the step of the method is as follows:
(1) ito glass substrate is carried out standardization cleaning;
(2) by HAT-CN and F4-TCNQ with mass ratio be 1:6 ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1.5h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(3) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1.5h, obtain solution B, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(4) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (2) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film;
(5) solution B obtained in step (3) is coated on by the method for rotary coating the oiliness film surface that the 3rd step obtains uniformly, and the 15min that anneals at the temperature of 150 DEG C, now ITO substrate surface defines the film of oiliness-water-based Dual Implantations layer, is the Double-charge implantation layer for semiconductor device.
comparative example 1
For a preparation method for the oiliness list electric charge injection layer of semiconductor device, the step of the method is as follows:
(1) ito glass substrate is carried out standardization cleaning;
(2) by HAT-CN and F4-TCNQ with mass ratio be 1:4 ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1.5h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(3) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (2) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film, obtains oiliness list electric charge injection layer.
comparative example 2
For a preparation method for the water-based list electric charge injection layer of semiconductor device, the step of the method is as follows:
(1) ito glass substrate is carried out standardization cleaning;
(2) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1.5h, obtain solution A, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(3) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (2) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck water-based film, obtains water-based list electric charge injection layer.
The OLED for preparing of depositing light emitting layer (TCTA:Firpic), electron transfer layer (TmPyPB) and negative electrode (Liq/Al) successively again on the electric charge injection layer that embodiment 1, comparative example 1 and comparative example 2 prepare.Known from Fig. 1-4, in embodiment 1, current efficiency maximum is 16.7cd/A, and power efficiency maximum is 7.16lm/W; In comparative example 1, current efficiency maximum is 7.13cd/A, and power efficiency maximum is 3.16lm/W; In comparative example 2, current efficiency maximum is 5.01cd/A, and power efficiency maximum is 1.72lm/W; Composition graphs 3, Fig. 4 are known, and when oiliness implanted layer and water-based implanted layer are combined, device performance can reach optimum efficiency, and when only using oiliness implanted layer or water-based implanted layer, and device efficiency all can have and significantly reduces.
Can obtain thus, by the level-density parameter of oiliness-water-based Dual Implantations layer, be conducive to the transmission in hole and the stop of electronics, effectively can improve the efficiency of device.
Claims (5)
1., for a preparation method for the Double-charge implantation layer of semiconductor device, it is characterized in that the step of the method is as follows:
(1) by HAT-CN and F4-TCNQ with mass ratio be 1:(2-6) ratio mixing be dissolved in acetone, until completely dissolved leave standstill 1-2h, obtain solution A, wherein in solution A, the total concentration of HAT-CN and F4-TCNQ is 2mg/mL;
(2) by CuPc and MoO
3soluble in waterly respectively make the aqueous solution, stir 10h respectively under atmospheric environment after, mix with the ratio of volume ratio 1:1, leave standstill 1-2h, obtain solution B, wherein CuPc and MoO
3the concentration of the aqueous solution is respectively 4mg/mL and 1mg/mL;
(3) substrate to be coated is positioned over ozone treatment 20min in UV ozone machine, then the solution A obtained in step (1) is used to be coated on substrate surface uniformly by the method for rotary coating, and the 15min that anneals at the temperature of 60 DEG C, now substrate surface forms one deck oiliness film;
(4) solution B obtained in step (2) is coated on by the method for rotary coating the oiliness film surface that the 3rd step obtains uniformly, and the 15min that anneals at the temperature of 150 DEG C, now ITO substrate surface defines the film of oiliness-water-based Dual Implantations layer, is the Double-charge implantation layer for semiconductor device.
2. the preparation method of a kind of Double-charge implantation layer for semiconductor device according to claim 1, is characterized in that: in described step (1) by HAT-CN and F4-TCNQ with mass ratio be 1:4 ratio mixing be dissolved in acetone.
3. the preparation method of a kind of Double-charge implantation layer for semiconductor device according to claim 1, is characterized in that: after dissolving completely in described step (1), time of repose is 1.5h.
4. the preparation method of a kind of Double-charge implantation layer for semiconductor device according to claim 1, is characterized in that: in described step (2), time of repose is 1.5h.
5. the preparation method of a kind of Double-charge implantation layer for semiconductor device according to claim 1, is characterized in that: the substrate in described step (3) is monocrystalline silicon substrate or ito glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610062055.4A CN105552242B (en) | 2016-01-29 | 2016-01-29 | Preparation method of double-charge injection layer for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610062055.4A CN105552242B (en) | 2016-01-29 | 2016-01-29 | Preparation method of double-charge injection layer for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105552242A true CN105552242A (en) | 2016-05-04 |
| CN105552242B CN105552242B (en) | 2017-05-03 |
Family
ID=55831313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610062055.4A Active CN105552242B (en) | 2016-01-29 | 2016-01-29 | Preparation method of double-charge injection layer for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552242B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469693A (en) * | 2002-07-01 | 2004-01-21 | ������������ʽ���� | Composition, film forming method and film forming apparatus, electrooptical apparatus and producing method thereof |
| CN101523631A (en) * | 2006-10-12 | 2009-09-02 | 出光兴产株式会社 | Organic thin film transistor element and organic thin film light emitting transistor |
| CN101540379A (en) * | 2009-04-24 | 2009-09-23 | 电子科技大学 | Method for producing organic electroluminescence device |
| CN102113414A (en) * | 2008-07-30 | 2011-06-29 | 松下电工株式会社 | Organic electroluminescence element and production method of same |
| CN102484210A (en) * | 2009-10-27 | 2012-05-30 | 大日本印刷株式会社 | Transition Metal Compound-Containing Nanoparticle And Method For Producing The Same, Ink For Positive Hole Injection Transport Layer, Device Comprising Positive Hole Injection Transport Layer And Method For Producing The Same |
| US20120161192A1 (en) * | 2010-12-22 | 2012-06-28 | Korea Advanced Institute Of Science And Technology | Nitrogen-doped transparent graphene film and manufacturing method thereof |
| TW201229204A (en) * | 2010-12-17 | 2012-07-16 | Du Pont | Anthracene derivative compounds for electronic applications |
| WO2012157693A1 (en) * | 2011-05-17 | 2012-11-22 | Ｎｅｃトーキン株式会社 | Conductive polymer suspension and method for producing same, conductive polymer material, and electrolytic capacitor and method for producing same |
| CN104365180A (en) * | 2012-05-28 | 2015-02-18 | 三菱化学株式会社 | Method for producing conductive thin film laminate |
| CN105006435A (en) * | 2015-07-21 | 2015-10-28 | 苏州大学 | Preparation method of hole transport layer for semiconductor device |
-
2016
- 2016-01-29 CN CN201610062055.4A patent/CN105552242B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469693A (en) * | 2002-07-01 | 2004-01-21 | ������������ʽ���� | Composition, film forming method and film forming apparatus, electrooptical apparatus and producing method thereof |
| CN101523631A (en) * | 2006-10-12 | 2009-09-02 | 出光兴产株式会社 | Organic thin film transistor element and organic thin film light emitting transistor |
| CN102113414A (en) * | 2008-07-30 | 2011-06-29 | 松下电工株式会社 | Organic electroluminescence element and production method of same |
| CN101540379A (en) * | 2009-04-24 | 2009-09-23 | 电子科技大学 | Method for producing organic electroluminescence device |
| CN102484210A (en) * | 2009-10-27 | 2012-05-30 | 大日本印刷株式会社 | Transition Metal Compound-Containing Nanoparticle And Method For Producing The Same, Ink For Positive Hole Injection Transport Layer, Device Comprising Positive Hole Injection Transport Layer And Method For Producing The Same |
| TW201229204A (en) * | 2010-12-17 | 2012-07-16 | Du Pont | Anthracene derivative compounds for electronic applications |
| US20120161192A1 (en) * | 2010-12-22 | 2012-06-28 | Korea Advanced Institute Of Science And Technology | Nitrogen-doped transparent graphene film and manufacturing method thereof |
| WO2012157693A1 (en) * | 2011-05-17 | 2012-11-22 | Ｎｅｃトーキン株式会社 | Conductive polymer suspension and method for producing same, conductive polymer material, and electrolytic capacitor and method for producing same |
| CN104365180A (en) * | 2012-05-28 | 2015-02-18 | 三菱化学株式会社 | Method for producing conductive thin film laminate |
| CN105006435A (en) * | 2015-07-21 | 2015-10-28 | 苏州大学 | Preparation method of hole transport layer for semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 刘佰全等: "具有新型双空穴注入层的有机发光二极管", 《物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552242B (en) | 2017-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105280829B (en) | Qled and preparation method thereof | |
| CN106384785B (en) | A kind of tin dope methyl ammonium lead iodide perovskite solar cell | |
| CN105826483A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN105140361B (en) | Light emitting diode with quantum dots and preparation method thereof | |
| CN105161637A (en) | Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode | |
| CN109449316A (en) | A kind of In doping MoO3The preparation method of film | |
| CN105895829A (en) | Cu:NiO nanoparticle, light emitting diode and preparation methods thereof | |
| CN108735905A (en) | A kind of QLED devices and preparation method | |
| CN105280826A (en) | Novel polymer solar cell with dual-electron transmission layer | |
| CN107068884B (en) | A kind of ultraviolet organic electroluminescence device of high efficiency and preparation method thereof | |
| CN102881841A (en) | Semiconductor photoelectric device using copper/graphene composite electrode as anode | |
| CN105206641A (en) | QLED and TFT integrating device and manufacturing method thereof | |
| CN106711177A (en) | QLED field effect transistor with improved light extraction ratio, and preparation method for QLED field effect transistor | |
| CN104617220A (en) | Planar perovskite solar cell based on graphene ZnO cathode and preparation method thereof | |
| CN107032341B (en) | A kind of grapheme material and its method of modifying and application | |
| CN108417736A (en) | A kind of preparation method of transition metal oxide as hole injection layer | |
| CN104157794A (en) | Method for preparing transitional metal oxide thin film with adjustable thickness and work function | |
| CN106098957A (en) | A kind of QLED and preparation method thereof | |
| CN106159108A (en) | A kind of QLED and preparation method thereof | |
| CN101339976A (en) | Organic electroluminescent device | |
| CN107946484A (en) | A kind of white light organic electroluminescent device and preparation method thereof | |
| CN105552242A (en) | Preparation method of double-charge injection layer for semiconductor device | |
| CN101692484B (en) | Reverse-structured organic light-emitting device and manufacturing method thereof | |
| CN109980116B (en) | Field effect transistor and preparation method thereof | |
| CN103928628B (en) | A kind of preparation method modifying indium-tin oxide anode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |