CN105006435B - Preparation method of hole transport layer for semiconductor device - Google Patents
Preparation method of hole transport layer for semiconductor device Download PDFInfo
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- CN105006435B CN105006435B CN201510429332.6A CN201510429332A CN105006435B CN 105006435 B CN105006435 B CN 105006435B CN 201510429332 A CN201510429332 A CN 201510429332A CN 105006435 B CN105006435 B CN 105006435B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000005525 hole transport Effects 0.000 title abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 43
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims abstract description 20
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims description 49
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 4
- 239000013590 bulk material Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 10
- 238000010549 co-Evaporation Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000008364 bulk solution Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000020841 movement in host Effects 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of a hole transport layer for a semiconductor device, which is characterized by comprising the following first steps of: coating a main body material on the ITO transparent conductive substrate by a vacuum thermal evaporation method or a spin coating method, wherein the main body material is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD; the second step is that: and coating a guest material on the surface of the host material in the first step by a vacuum thermal evaporation method or a spin coating method to obtain the preparation method of the hole transport layer for the semiconductor device, wherein the guest material is F2-HCNQ or F4-TCNQ. The preparation method provided by the invention enables the guest material which is originally required to be doped by co-evaporation to enter the host material through drifting, thereby achieving the doping effect.
Description
Technical field
The invention belongs to the preparations of field of semiconductor devices more particularly to a kind of hole transmission layer for semiconductor devices
Method.
Background technology
In semiconductor devices especially organic semiconductor device, energy between each layer is very poor very big, especially electrode and
Energy between organic interface is very poor.Injection barrier between ITO and hole transmission layer makes the operating voltage of device very big, efficiency
It is very low.Therefore, it usually needs, by using doping techniques to reduce injection barrier in hole transmission layer, to carry in device fabrication process
The charge mobility of high-transmission layer, to realize the making of low-voltage, high efficiency, long lived devices.Traditional way is generally logical
It crosses vacuum vapour deposition and steams subject and object dopant material altogether and deposit the film adulterated.Vacuum vapour deposition needs while controlling master
The evaporation rate of body and guest materials, this control are difficult to grasp, and the process for controlling doping ratio wastes material very much.It steams altogether
Doping is a kind of method not only having expended the time but also expend material, can be brought a great deal of trouble in the industrial production.
Invention content
The technical issues of solution：For it is existing steam altogether doping method there are the shortcomings that, the present invention provides a kind of for partly leading
The preparation method of the hole transmission layer of body device, this method to need to pass through drift by steaming the guest materials of doping altogether originally
Into in material of main part, to have the function that doping.
Technical solution：A kind of preparation method of hole transmission layer for semiconductor devices, preparation process are as follows：
The first step：Pass through vacuum thermal evaporation deposition or spin-coating method coated subject material on transparent electrically-conductive backing plate；
Second step：It is deposited by vacuum thermal evaporation in the bulk material surface of the first step or spin-coating method is coated with object material
Expect the preparation method to get the hole transmission layer for semiconductor devices.
Material of main part described above is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD.
Guest materials described above is F2-HCNQ or F4-TCNQ.
The condition of vacuum thermal evaporation is in the first step described above：Chamber vacuum degree≤1 × 10-4 Pa, evaporation rate
For 0.3 nm/s, evaporation thickness is 40 nm.
The condition of vacuum thermal evaporation is in second step described above：Chamber vacuum degree≤1 × 10-4 Pa, evaporation rate
For 0.03 nm/s, evaporation thickness is 2 nm.
The process that spin-coating method is coated in the first step and second step described above carries out under conditions of anhydrous and oxygen-free.
In second step described above, with vacuum thermal evaporation deposit guest materials during, guest materials by
Warm-up movement enters in material of main part, to reach and steam altogether same doping effect.
In second step described above, made annealing treatment during being coated with guest materials with spin-coating method, object material
Material is entered using warm-up movement in material of main part, to reach and steam altogether same doping effect.
Device after the hole transmission layer that this method is prepared can be additionally used in prepares link or other purposes.
Advantageous effect：A kind of preparation method of hole transmission layer for semiconductor devices provided by the invention, have with
Lower advantage：
1. the production method of the present invention is simple and convenient, equipment requirement is low, and film is easy to make, reproducible；
2. the preparation method of the present invention can be applied to the doping of the material of some difficult co-evaporations；
3. proposed by the present invention achieved the effect that doping by the non-preparation method steamed altogether, realizes and be directed to not simultaneous interpretation
The doping of defeated layer advantageously reduces the energy level potential barrier between transport layer and electrode, improves the injection and transmission of carrier, is prepared into
The hole transmission layer arrived has the injection of good charge and transmittability.
Description of the drawings
Fig. 1 is the hole transmission layer that embodiment 1 is prepared（NPB/F4-TCNQ）With conventional monolayers hole transmission layer
（NPB）And the hole transmission layer adulterated in comparative example 1（NPB：HATCN 5 vol.%）Effect when reducing device operating voltages
Fruit is schemed.It can be seen from the figure that hole transmission layer identical in driving current, of the invention（NPB/F4-TCNQ）Tool
There is lower driving voltage（Such as in 20 mA/cm of current density2When, NPB, NPB：HATCN 5 vol.% and NPB/F4-
The driving voltage of TCNQ is respectively 6.2 V, 6.1 V and 5.6 V）, the energy level potential barrier between transport layer and electrode is advantageously reduced,
Improve the injection and transmission of carrier.Device architecture be ITO/ hole transmission layers/luminescent layer/electron transfer layer/electron injecting layer/
Al electrodes.
Fig. 2 is the hole transmission layer that embodiment 3 is prepared（Poly-TPD/F4-TCNQ）With conventional monolayers hole transport
Layer（Poly-TPD）Design sketch when reducing device operating voltages.It can be seen from the figure that the situation identical in driving current
Under, hole transmission layer of the invention（Poly-TPD/F4-TCNQ）With lower driving voltage（Such as in current density 20
mA/cm2When, the driving voltage of Poly-TPD and Poly-TPD/F4-TCNQ are respectively 9.7 V and 8.9 V）, to be conducive to subtract
Few energy level potential barrier between transport layer and electrode improves the injection and transmission of carrier.Device architecture be ITO/ hole transmission layers/
Luminescent layer/electron transfer layer/electron injecting layer/Al electrodes.
Fig. 3 is the hole transmission layer that embodiment 5 is prepared（m-MTDATA/F4-TCNQ）With conventional monolayers hole transport
Layer（m-MTDATA）Design sketch when reducing device operating voltages.It can be seen from the figure that the situation identical in driving current
Under, hole transmission layer of the invention（m-MTDATA/F4-TCNQ）With lower driving voltage（Such as in current density 20
mA/cm2When, the driving voltage of m-MTDATA and m-MTDATA/F4-TCNQ are respectively 6.3 V and 5.5 V）, to be conducive to subtract
Few energy level potential barrier between transport layer and electrode improves the injection and transmission of carrier.Device architecture be ITO/ hole transmission layers/
Luminescent layer/electron transfer layer/electron injecting layer/Al electrodes.
Specific implementation mode
Used material of main part and guest materials are purchased from Lumtec companies in following embodiment.
Embodiment 1
A kind of preparation method of hole transmission layer for semiconductor devices, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：By the method for vacuum evaporation on transparent electrically-conductive backing plate deposit host material NPB, specific method
It is that material of main part NPB is placed in quartz boat, by electric-heating-wire-heating quartz boat, the NPB in quartz boat is made to evaporate, it is true in cavity
Reciprocal of duty cycle≤1 × 10-4 When Pa, start deposit host material, control evaporation rate is 0.3nm/s, evaporation thickness 40nm；
Third walks：Guest materials F4-TCNQ is deposited on the surfaces material of main part NPB, specific method by the method for vapor deposition
It is that guest materials F4-TCNQ is placed in quartz boat, by electric-heating-wire-heating quartz boat, the F4-TCNQ in quartz boat is made to evaporate,
In chamber vacuum degree≤1 × 10-4 When Pa, start to deposit guest materials, control evaporation rate is 0.03 nm/s, and evaporation thickness is
2nm, up to being used for the hole transmission layer of semiconductor devices after deposition.
During vacuum evaporation, guest materials F4-TCNQ enters by warm-up movement in material of main part, is mixed to be formed
Miscellaneous hole transmission layer.Specific effect is as shown in Fig. 1 curves NPB/F4-TCNQ.
Embodiment 2
A kind of preparation method of hole transmission layer for semiconductor devices, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：Material of main part NPB is dissolved in chloroform, is stirred using magneton, stands 1h or more until completely dissolved,
It is configured to the bulk solution of a concentration of 9g/mL；
Third walks：Guest materials F4-TCNQ is dissolved in acetone, is stirred using magneton, stands 1h until completely dissolved
More than, it is configured to the object solution of a concentration of 2g/mL；
4th step：Transparent electrically-conductive backing plate to be coated is positioned over ozone treatment 10min in UV ozone machine, then
Transparent electrically-conductive backing plate surface is uniformly coated on by the method for rotary coating with pre-prepared bulk solution, specifically
Method is to rotate 10s under the rotating speed of 500 rpm first, is then accelerated under the rotating speed of 4500rpm and rotates 50s, stands 60s,
Transparent electrically-conductive backing plate surface has formed a layer main body film at this time；
5th step：Host film table is uniformly coated on by the method for rotary coating with pre-prepared object solution
Face, specific method are to rotate 5s under the rotating speed of 2000 rpm first, are then accelerated under the rotating speed of 6000rpm and rotate 50s,
20s is stood, host film surface has formed one layer of object film at this time；
6th step：Entire transparent electrically-conductive backing plate after 5th step is positioned on warm table, is moved back at being 60 DEG C in temperature
Fire keeps 10min to get the hole transmission layer for semiconductor devices.
During annealing, the molecule in object film will be entered by warm-up movement in host film, to form master
The hole transmission layer of object doping.
Embodiment 3
A kind of preparation method of hole transmission layer for semiconductor devices, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：Material of main part Poly-TPD is dissolved in chloroform, is stirred using magneton, stands 1h until completely dissolved
More than, it is configured to the bulk solution of a concentration of 8 g/mL；
Third walks：Guest materials F4-TCNQ is dissolved in acetone, is stirred using magneton, stands 1h until completely dissolved
More than, it is configured to the object solution of a concentration of 2g/mL；
4th step：Transparent electrically-conductive backing plate to be coated is positioned over ozone treatment 10min in UV ozone machine, then
Substrate surface is uniformly coated on by the method for rotary coating with pre-prepared bulk solution, specific method is to exist first
10s is rotated under the rotating speed of 500 rpm, is then accelerated under the rotating speed of 4000rpm and rotates 50s, stands 60s, at this time substrate surface
A layer main body film is formed；
5th step：Host film table is uniformly coated on by the method for rotary coating with pre-prepared object solution
Face, specific method are to rotate 5s under the rotating speed of 2000 rpm first, are then accelerated under the rotating speed of 6000rpm and rotate 50s,
20s is stood, host film surface has formed one layer of object film at this time；
6th step：Entire transparent electrically-conductive backing plate after 5th step is positioned on warm table, is moved back at being 60 DEG C in temperature
Fire keeps 10min to get the hole transmission layer for semiconductor devices.
During annealing, the molecule in object film will be entered by warm-up movement in host film, to form master
The hole transmission layer of object doping.Specific effect is as shown in Figure 2.
Embodiment 4
A kind of preparation method of hole transmission layer for semiconductor devices, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：By the method for vacuum evaporation on transparent electrically-conductive backing plate deposit host material 2-TNATA, specifically
Method is that material of main part 2-TNATA is placed in quartz boat, by electric-heating-wire-heating quartz boat, makes the 2-TNATA in quartz boat
Evaporation, in chamber vacuum degree≤1 × 10-4 When Pa, start deposit host material, control evaporation rate is 0.3 nm/s, and vapor deposition is thick
Degree is 40 nm；
Third walks：Guest materials F2-HCNQ is deposited on the surfaces material of main part 2-TNATA by the method for vapor deposition, specifically
Method is that guest materials is placed in quartz boat, passes through electric-heating-wire-heating quartz boat so that the organic material evaporation in boat, in chamber
Body vacuum degree≤1 × 10-4 When Pa, it can start to deposit guest materials, control evaporation rate is 0.03 nm/s, evaporation thickness 2
Nm, up to being used for the hole transmission layer of semiconductor devices after deposition.
During vacuum evaporation, guest materials F2-HCNQ enters by warm-up movement in material of main part, is mixed to be formed
Miscellaneous hole transmission layer.
Embodiment 5
A kind of preparation method of hole transmission layer for semiconductor devices, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：By the method for vacuum evaporation on transparent electrically-conductive backing plate deposit host material m-MTDATA, specifically
Method is that material of main part m-MTDATA is placed in quartz boat, by electric-heating-wire-heating quartz boat, makes organic material in quartz boat
Material evaporation, in chamber vacuum degree≤1 × 10-4 When Pa, start deposit host material, control evaporation rate is 0.3nm/s, vapor deposition
Thickness is 40nm；
Third walks：Guest materials F4-TCNQ is deposited on the surfaces material of main part m-MTDATA by the method for vapor deposition, specifically
Method is that guest materials is placed in quartz boat, by electric-heating-wire-heating quartz boat, the organic material in quartz boat is made to evaporate,
Chamber vacuum degree≤1 × 10-4 When Pa, start to deposit guest materials, control evaporation rate is 0.03nm/s, and evaporation thickness is
2nm, up to being used for the hole transmission layer of semiconductor devices after deposition.
During vacuum evaporation, guest materials F4-TCNQ enters by warm-up movement in material of main part m-MTDATA, from
And form the hole transmission layer of doping.Specific effect is as shown in Figure 3.
Comparative example 1
A kind of preparation method of the hole transmission layer of doping, specific preparation process are as follows：
The first step：Deionized water, absolute ethyl alcohol and acetone is used to be cleaned by ultrasonic 10min successively transparent electrically-conductive backing plate,
Then tweezers chucking substrate is used, N is used2Rifle dries up the moisture of substrate surface, faces up later, is put into the culture for cleaning drying
It is preserved in ware；
Second step：Doping hole transmission layer, specific side are deposited on transparent electrically-conductive backing plate by the method for vacuum evaporation
Method is that material of main part NPB and guest materials HATCN are respectively placed in different quartz boats, by electric-heating-wire-heating quartz boat,
Make the material of main part NPB in quartz boat and guest materials HATCN evaporations, in chamber vacuum degree≤1 × 10-4 When Pa, preheat simultaneously
The evaporation rate of material of main part NPB and guest materials HATCN, control material of main part NPB are 0.3nm/s, control guest materials
The evaporation rate of HATCN is 0.015nm/s, and material of main part NPB and guest materials HATCN is mixed with object doping than 5 vol.%
It closes uniformly, after waiting for rate stabilization, starts to deposit, evaporation thickness 40nm, you can the hole transmission layer of doping is made.Specific effect
Such as Fig. 1 curves NPB:Shown in 5 vol.% of HATCN.
Claims (5)
1. a kind of preparation method of hole transmission layer for semiconductor devices, it is characterised in that preparation process is as follows：
The first step：By vacuum thermal evaporation deposition or spin-coating method coated subject material on transparent electrically-conductive backing plate, wherein
Material of main part is NPB, a-NPD, 2-TNATA, m-MTDATA, TPD or Poly-TPD；
Second step：It is deposited by vacuum thermal evaporation in the bulk material surface of the first step or spin-coating method is coated with guest materials,
Up to the preparation method of the hole transmission layer for semiconductor devices, wherein guest materials is F2-HCNQ or F4-TCNQ.
2. a kind of preparation method of hole transmission layer for semiconductor devices according to claim 1, it is characterised in that
The condition of vacuum thermal evaporation is in the first step：Chamber vacuum degree≤1 × 10-4 Pa, evaporation rate are 0.3 nm/s, are steamed
Plating thickness is 40 nm.
3. a kind of preparation method of hole transmission layer for semiconductor devices according to claim 1, it is characterised in that
The condition of vacuum thermal evaporation is in the second step：Chamber vacuum degree≤1 × 10-4 Pa, evaporation rate are 0.03 nm/s, are steamed
Plating thickness is 2 nm.
4. a kind of preparation method of hole transmission layer for semiconductor devices according to claim 1, it is characterised in that：
The process that spin-coating method is coated in the first step and second step carries out under conditions of anhydrous and oxygen-free.
5. a kind of preparation method of hole transmission layer for semiconductor devices according to claim 1, it is characterised in that：
It is made annealing treatment during spin-coating method coating guest materials in the second step.
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