CN102201345A - Production method of termination structure used for deep-trench super junction MOS (Metal Oxide Semiconductor) device - Google Patents
Production method of termination structure used for deep-trench super junction MOS (Metal Oxide Semiconductor) device Download PDFInfo
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- CN102201345A CN102201345A CN 201110138091 CN201110138091A CN102201345A CN 102201345 A CN102201345 A CN 102201345A CN 201110138091 CN201110138091 CN 201110138091 CN 201110138091 A CN201110138091 A CN 201110138091A CN 102201345 A CN102201345 A CN 102201345A
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Abstract
The invention provides a production method of termination structure used for a deep-trench super junction MOS (Metal Oxide Semiconductor) device. The method comprises following steps: providing a silicon substrate, and forming deep trenches of super junction structures and termination structures respectively on the silicon substrate; depositing polycrystalline silicon layers in the deep trenches, wherein the doping type of the polycrystalline silicon layers is opposite to that of the silicon substrate; diffusing doped impurities from the polycrystalline silicon layers into the silicon substrate to form impurity diffusion areas around the deep trenches; changing the polycrystalline silicon layers into oxidation layers through the way of thermal oxidation to fully fill the deep trenches. In the preparation of a polycrystalline silicon grid of the MOS device, a polycrystalline silicon field plates are formed in the areas of the termination structures synchronously. The terminal structure and the production method thereof disclosed in the invention have the advantages of simple implementation process and design method and are completely compatible with the process of deep-trench super junction MOS device.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, specifically, the present invention relates to a kind of manufacture method that is used for the terminal structure of the super knot of deep trouth MOS device.
Background technology
Power MOSFET with its input impedance height, loss is low, switching speed is fast, no second breakdown, the safety operation area is wide, dynamic property good, easily generally be used for low-power conversion and control field with characteristics such as the big electric currentization of preceding utmost point coupling realization, conversion efficiency height.Though power MOS (Metal Oxide Semiconductor) device has obtained surprising raising on power handling capability, in the high pressure field,, make the conduction loss of power MOS (Metal Oxide Semiconductor) device rise rapidly along with withstand voltage raising owing to conducting resistance Ron., reduction conduction loss withstand voltage in order to improve, a series of new construction, new technology are arisen at the historic moment.And the effect of super knot (Super Junction) technology in the high pressure field that wherein is used for improving the power MOS (Metal Oxide Semiconductor) device performance showing very much, attracted large quantities of device suppliers research and development of injecting capital into, successfully developed the cold MOS in plane at present and dropped into commercial the application.
Cold MOS (Cool MOS) has another name called Super Junction MOSFET (super node MOSFET), invented by the Chen Xing of the Chengdu University of Electronic Science and Technology academician that assists at first, after transfer company of German Infineon.As the new device of power MOSFET field milestone, Cool MOS has broken the theoretical limit of conventional power MOSFET, comes out in 1998 and also moves towards market very soon.
Compare with common high-voltage MOSFET, Cool MOS is owing to adopt new structure of voltage-sustaining layer, utilized the notion of super knot, when almost keeping all advantages of power MOSFET, extremely low conduction loss is arranged again, caloric value is very low, can also show in addition to reduce chip area, so just be called Cool MOS.At this power transistor with 600 volts is example, uses the conducting resistance of the Cool MOS with super-junction structure to have only 20% of conventional power transistors of the same area.And its output capacitance, input capacitance also reduce synchronously, and the operating frequency characteristic of device is improved.
But, needing in the preparation of traditional super-junction structure through repeatedly photoetching, ion injection, propelling and epitaxial growth, complex process and cost are very high.In addition, the super-junction structure with " sugarcoated haws " shape that Using such method forms has the uneven shortcoming in composition surface, and leaky takes place when causing cold MOS device to work easily for this, thereby reduces the electric property of device.
In order to overcome the complicated and structural shortcoming of traditional super-junction structure manufacturing process, the deep trouth super-junction structure that technology is simple, controllability is good has appearred recently.This structure is to form uniform PN junction by the constant source method of diffusion along the groove periphery, this super-junction structure can improve the puncture voltage of power MOS pipe very effectively by the charge balance concept on super knot both sides, thereby significantly reduces the conducting resistance of power MOS pipe.
Can be 201110087263.7 Chinese invention patent application referring to application number about the detailed content of above-mentioned new deep trouth super-junction structure.
Yet, when this new deep trouth super-junction structure is used on the actual power device, sometimes the suffered puncture voltage of device can be very high, therefore uses terminal structure (Termination Structure) to reduce the surface field of device, makes puncture voltage as much as possible near planar junction.So, need to redesign a kind of terminal structure that meets this new deep trouth super-junction structure in the prior art.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacture method that is used for the terminal structure of the super knot of deep trouth MOS device, and is compatible mutually with the super knot of deep trouth technology.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method that is used for the terminal structure of the super knot of deep trouth MOS device, comprise step:
Silicon substrate is provided, is formed with the deep trouth of super-junction structure and terminal structure on it respectively;
Deposit polysilicon layer in described deep trouth, the doping type of described polysilicon layer is opposite with described silicon substrate;
Impurity in the described polysilicon layer is diffused in the described silicon substrate, around described deep trouth, forms impurity diffusion zone;
Mode by thermal oxidation becomes oxide layer with described polysilicon layer and fills up described deep trouth;
When making the polysilicon gate of described MOS device, in the area synchronized formation polysilicon field plate of described terminal structure.
Alternatively, described terminal structure comprises 3～4 deep trouths.
Alternatively, the doping type of described polysilicon layer is P type or N type, and the doping type of described silicon substrate is N type or P type.
Alternatively, described polysilicon layer forms by epitaxy technique.
Alternatively, the thickness of described polysilicon layer is 3000 dusts.
The present invention also provides a kind of manufacture method that is used for the terminal structure of the super knot of deep trouth MOS device, comprises step:
Silicon substrate is provided, is formed with the deep trouth of super-junction structure and terminal structure on it respectively;
Deposit polysilicon layer in described deep trouth, the doping type of described polysilicon layer is opposite with described silicon substrate;
Impurity in the described polysilicon layer is diffused in the described silicon substrate, around described deep trouth, forms impurity diffusion zone;
Mode by thermal oxidation becomes oxide layer with described polysilicon layer, continues deposit silicon dioxide until filling up described deep trouth;
When making the polysilicon gate of described MOS device, in the area synchronized formation polysilicon field plate of described terminal structure.
Alternatively, described terminal structure comprises 3～4 deep trouths.
Alternatively, the doping type of described polysilicon layer is P type or N type, and the doping type of described silicon substrate is N type or P type.
Alternatively, described polysilicon layer forms by epitaxy technique.
Alternatively, the thickness of described polysilicon layer is 3000 dusts.
Compared with prior art, the present invention has the following advantages:
Terminal structure of the present invention and preparation method thereof realization technology and method for designing are simple, and compatible fully with the technology of the super knot of deep trouth MOS device.
Description of drawings
The above and other features of the present invention, character and advantage will become more obvious by the description below in conjunction with drawings and Examples, wherein:
Fig. 1 is the schematic flow sheet of the manufacture method of the terminal structure that is used for the super knot of deep trouth MOS device of one embodiment of the invention;
Fig. 2 is the schematic flow sheet of the manufacture method of the terminal structure that is used for the super knot of deep trouth MOS device of another embodiment of the present invention;
Fig. 3 to Fig. 7 is the cross-sectional view of the manufacturing process of the terminal structure that is used for the super knot of deep trouth MOS device of one embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with specific embodiments and the drawings, but should not limit protection scope of the present invention with this.
Fig. 1 is the schematic flow sheet of the manufacture method of the terminal structure that is used for the super knot of deep trouth MOS device of one embodiment of the invention.As shown in the figure, the manufacture method of this terminal structure can comprise:
Execution in step S101 provides silicon substrate, is formed with the deep trouth of super-junction structure and terminal structure on the silicon substrate respectively;
Execution in step S102, deposit polysilicon layer in deep trouth, the doping type of this polysilicon layer is opposite with silicon substrate;
Execution in step S103 is diffused into the impurity in the polysilicon layer in the silicon substrate, forms impurity diffusion zone around deep trouth;
Execution in step S104, the mode by thermal oxidation becomes oxide layer with polysilicon layer and fills up deep trouth;
Execution in step S105 is when making the polysilicon gate of MOS device, in the area synchronized formation polysilicon field plate of terminal structure.
Fig. 2 is the schematic flow sheet of the manufacture method of the terminal structure that is used for the super knot of deep trouth MOS device of another embodiment of the present invention.As shown in the figure, the manufacture method of this terminal structure can comprise:
Execution in step S201 provides silicon substrate, is formed with the deep trouth of super-junction structure and terminal structure on the silicon substrate respectively;
Execution in step S202, deposit polysilicon layer in deep trouth, the doping type of this polysilicon layer is opposite with silicon substrate;
Execution in step S203 is diffused into the impurity in the polysilicon layer in the silicon substrate, forms impurity diffusion zone around deep trouth;
Execution in step S204, the mode by thermal oxidation becomes oxide layer with polysilicon layer, continues deposit silicon dioxide until filling up deep trouth;
Execution in step S205 is when making the polysilicon gate of MOS device, in the area synchronized formation polysilicon field plate of terminal structure.
Fig. 3 to Fig. 7 is the cross-sectional view of the manufacturing process of the terminal structure that is used for the super knot of deep trouth MOS device of one embodiment of the invention.Be described in detail below in conjunction with the manufacturing process of above-mentioned accompanying drawing the terminal structure that is used for the super knot of deep trouth MOS device of present embodiment.
As shown in Figure 3, provide silicon substrate 301, also be formed with one deck silicon epitaxy layer 302 on it, be used to make semiconductor device.The doping type of silicon substrate 301 and the epitaxial loayer 302 on it can be N type or P type.In a lateral direction, profile shown in Figure 3 can be divided into MOS device area 304 and terminal structure zone 305.Be formed with the deep trouth 303 of super-junction structure and terminal structure in silicon epitaxy layer 302 respectively, wherein Zuo Ce two deep trouths 303 belong to MOS device area 304, are used to form the super-junction structure of MOS device both sides; 303 in three deep trouths on right side belong to terminal structure zone 305, are used to form the terminal structure of MOS device.
The quantity and spacing of the deep trouth 303 in the terminal structure zone 305 can be decided by the withstand voltage and substrate concentration of super-junction structure, and for example deep trouth 303 also can surpass three, and for example four or more a plurality of, the spacing between the deep trouth 303 also can suitably increase and decrease.
As shown in Figure 4, for example by modes such as epitaxy technique deposit polysilicon layer 306 in deep trouth 303, thickness is roughly 3000 dusts.The doping type of polysilicon layer 306 is opposite with the epitaxial loayer 302 on it with silicon substrate 301.When the doping type of silicon substrate 301 and the epitaxial loayer 302 on it was the N type, the doping type of polysilicon layer 306 was the P type; And when the doping type of silicon substrate 301 and the epitaxial loayer 302 on it was the P type, the doping type of polysilicon layer 306 was the N type.
As shown in Figure 5, the impurity in the polysilicon layer 306 is diffused in the silicon epitaxy layer 302, around deep trouth 303, forms impurity diffusion zone 307 by heat treated mode.
As shown in Figure 6, the mode by thermal oxidation all changes polysilicon layer 306 into oxide layer 308, fills up deep trouth 303.Can't fill up deep trouth 303 if all change polysilicon layer 306 into oxide layer 308, then can change oxide layer into by thermal oxidation polysilicon layer 306 earlier, and then continue deposit silicon dioxide, until deep trouth 303 is all filled up.In a word, in deep trouth 303, need whole filling oxide layers 308.
Then, as shown in Figure 7, can continue the manufacturing process that traditional MOS technology is finished the MOS device between two deep trouths 303 in the MOS device area 304.In the manufacturing process of this MOS device, on terminal structure zone 305, form thick oxygen 310 together.And when making the polysilicon gate 309 of MOS device, form polysilicon field plate 311 synchronously in terminal structure zone 305, finish the manufacturing process of the terminal structure of present embodiment.
Terminal structure of the present invention and preparation method thereof realization technology and method for designing are simple, and compatible fully with the technology of the super knot of deep trouth MOS device.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. one kind is used for the manufacture method that deep trouth surpasses the terminal structure of knot MOS device, comprises step:
Silicon substrate is provided, is formed with the deep trouth of super-junction structure and terminal structure on it respectively;
Deposit polysilicon layer in described deep trouth, the doping type of described polysilicon layer is opposite with described silicon substrate;
Impurity in the described polysilicon layer is diffused in the described silicon substrate, around described deep trouth, forms impurity diffusion zone;
Mode by thermal oxidation becomes oxide layer with described polysilicon layer and fills up described deep trouth;
When making the polysilicon gate of described MOS device, in the area synchronized formation polysilicon field plate of described terminal structure.
2. the manufacture method of terminal structure according to claim 1 is characterized in that, described terminal structure comprises 3～4 deep trouths.
3. the manufacture method of terminal structure according to claim 2 is characterized in that, the doping type of described polysilicon layer is P type or N type, and the doping type of described silicon substrate is N type or P type.
4. according to the manufacture method of each described terminal structure in the claim 1 to 3, it is characterized in that described polysilicon layer forms by epitaxy technique.
5. the manufacture method of terminal structure according to claim 4 is characterized in that, the thickness of described polysilicon layer is 3000 dusts.
6. one kind is used for the manufacture method that deep trouth surpasses the terminal structure of knot MOS device, comprises step:
Silicon substrate is provided, is formed with the deep trouth of super-junction structure and terminal structure on it respectively;
Deposit polysilicon layer in described deep trouth, the doping type of described polysilicon layer is opposite with described silicon substrate;
Impurity in the described polysilicon layer is diffused in the described silicon substrate, around described deep trouth, forms impurity diffusion zone;
The described polysilicon layer of thermal oxidation becomes oxide layer, continues deposit silicon dioxide until filling up described deep trouth;
When making the polysilicon gate of described MOS device, in the area synchronized formation polysilicon field plate of described terminal structure.
7. the manufacture method of terminal structure according to claim 6 is characterized in that, described terminal structure comprises 3～4 deep trouths.
8. the manufacture method of terminal structure according to claim 8 is characterized in that, the doping type of described polysilicon layer is P type or N type, and the doping type of described silicon substrate is N type or P type.
9. according to the manufacture method of each described terminal structure in the claim 6 to 8, it is characterized in that described polysilicon layer forms by epitaxy technique.
10. the manufacture method of terminal structure according to claim 9 is characterized in that, the thickness of described polysilicon layer is 3000 dusts.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682686A (en) * | 2018-06-13 | 2018-10-19 | 中国电子科技集团公司第二十四研究所 | A kind of deep trouth semiconductor devices pressure resistance terminal and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101868856A (en) * | 2007-09-21 | 2010-10-20 | 飞兆半导体公司 | Superjunction structures for power devices and methods of manufacture |
| CN101937927A (en) * | 2009-07-01 | 2011-01-05 | 上海先进半导体制造股份有限公司 | Deep groove super PN junction structure and manufacturing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868856A (en) * | 2007-09-21 | 2010-10-20 | 飞兆半导体公司 | Superjunction structures for power devices and methods of manufacture |
| CN101937927A (en) * | 2009-07-01 | 2011-01-05 | 上海先进半导体制造股份有限公司 | Deep groove super PN junction structure and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682686A (en) * | 2018-06-13 | 2018-10-19 | 中国电子科技集团公司第二十四研究所 | A kind of deep trouth semiconductor devices pressure resistance terminal and its manufacturing method |
| CN108682686B (en) * | 2018-06-13 | 2021-04-20 | 中国电子科技集团公司第二十四研究所 | Deep-groove semiconductor device voltage-resistant terminal and manufacturing method thereof |
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Application publication date: 20110928 |