CN102197481A - 具有凹槽的微电子芯片与绳式配线元件的组件及装配方法 - Google Patents

具有凹槽的微电子芯片与绳式配线元件的组件及装配方法 Download PDF

Info

Publication number
CN102197481A
CN102197481A CN2009801417029A CN200980141702A CN102197481A CN 102197481 A CN102197481 A CN 102197481A CN 2009801417029 A CN2009801417029 A CN 2009801417029A CN 200980141702 A CN200980141702 A CN 200980141702A CN 102197481 A CN102197481 A CN 102197481A
Authority
CN
China
Prior art keywords
rope
projection
groove
chip
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009801417029A
Other languages
English (en)
Other versions
CN102197481B (zh
Inventor
让·布龙
苏菲·沃伦
多米尼克·维卡德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of CN102197481A publication Critical patent/CN102197481A/zh
Application granted granted Critical
Publication of CN102197481B publication Critical patent/CN102197481B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45025—Plural core members
    • H01L2224/45028—Side-to-side arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Installation Of Indoor Wiring (AREA)
  • Connections By Means Of Piercing Elements, Nuts, Or Screws (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

本发明涉及至少一个微电子芯片与配线元件(5)的组件，该芯片具有用于嵌入配线元件的凹槽(4)。配线元件(5)是纵轴基本上平行于凹槽的轴的绳且包括覆盖有绝缘物质的至少两个导电配线(5a，5b，5c)。芯片在凹槽(4)中包括至少一个导电凸块(9)，该凸块仅与绳的导电配线中的一个的剥开区域电接触。

Description

具有凹槽的微电子芯片与绳式配线元件的组件及装配方法
技术领域
本发明涉及至少一个微电子芯片与配线元件的组件，该芯片包括用于嵌入配线元件的纵向凹槽。
背景技术
目前，存在众多用于使微电子芯片彼此机械并电连接的技术。当芯片形成在基板上且已通过切割分开时，传统的技术包括在芯片之间进行刚性的机械连接。于是，芯片被固定在刚性支撑上，继而在保护涂层形成前进行电连接。这样的方法在于在刚性支撑上进行连接，并传统上在芯片连接过程中存在大的复杂性时使用。然而，该方法具有使用刚性机械支撑的主要缺点，这尤其不适合于柔性结构的集成。
申请人提交的文件WO2008/025889描述了包括两个平行的主表面1、2和接合两个主表面1和2的侧表面3a、3b的微电子芯片，如图1所示。侧表面3a、3b中的至少一个包括凹槽4，该凹槽4提供有电连接元件(未示出)并且形成配线元件5的壳。电连接元件由凹槽4的金属涂敷来实现。然后，配线元件5通过利用附加材料的焊接、通过电解、通过粘合或者通过嵌入而被固定到凹槽4。如果微电子芯片需要两个独立的数据总线，这就需要在两个独立的侧表面上制作两个凹槽，每个凹槽4包括不同的电连接元件。因此，两个数据总线通过两个不同凹槽中设置的两个导电配线元件5的组合而实现。只要数据总线的数量不增加，就不会引起生产问题。如果芯片需要十个左右不同的连接，则实际上不可能实现这些连接，除非在主表面1和2上增加连接端子，从而使微电子芯片超载并使组件的柔性降低。此外，在组件包括通过配线元件而彼此连接的几个芯片的情况下，这些芯片必须共享该数据总线。
发明内容
本发明的目标是实现配线元件和芯片间的组件，该组件不存在现有技术的缺点。
该目标试图这样来实现，配线元件是纵轴基本上平行于凹槽的轴的绳且包括覆盖有绝缘物质的至少两个导电配线，在凹槽中，芯片包括至少一个导电凸块，该凸块仅与绳的导电配线中的一个的剥开区域电接触。
根据第一替代实施例，该组件包括通过绳连接的至少两个芯片，绳的一个导电配线与一个芯片的凸块接触。
根据第二替代实施例，绳的一个导电配线与至少两个芯片的凸块接触。
根据另一个替代实施例，所述芯片包括与绳的不同的导电配线一样多的凸块，每个凸块与绳的相应配线电接触。
根据设计，每个凸块至少设置在凹槽的第一侧壁上，并且每个凸块形成用于通过在每个凸块和凹槽的与所述凸块相对的第二侧壁之间夹紧绳而使绳在凹槽中固定的装置。
本发明的进一步目标是提供实现具有凹槽的微电子芯片与绳形式的配线元件的组件的方法。该方法包括形成嵌入凹槽的绳，所述绳通过在每个凸块和与所述凸块相对的侧壁之间夹紧而被固定，并且该方法还包括剥开绳的导电配线的设计为与对应的凸块接触的区域。
附图说明
通过下面对本发明具体实施例的描述，其它优点和特征将变得更加明显易懂，本发明的具体实施例仅处于非限定性示例的目的并示出在附图中，其中：
图1示出了根据现有技术通过在凹槽中嵌入而将微电子芯片连接到配线元件。
图2以侧视图示出了用于实现根据本发明的组件的微电子芯片的示例。
图3以沿着图2的A-A线剖取的截面图示出了微电子芯片。
图4以沿着图2的B-B线的视图示出了绳式配线元件已经插入的微电子芯片。
图5示出了凹槽中的连接凸块的替代实施例，类似于沿着图2的A-A线的截面图。
图6和7示出了连接微电子芯片与配线元件的方法。
图8、9和10示意性地示出了组件的可能的电连接的类型。
具体实施方式
微电子芯片可以用于形成链串形式的芯片组件。于是，各芯片通过配线元件而彼此连接。这种应用中使用的芯片优选具有小于5mm或者甚至小于1mm的尺寸。根据本发明的组件实际上尤其适合于小尺寸芯片，因为可以使小尺寸芯片的处理和连接更加容易。
如图2所示，这样的微电子芯片包括例如两个主表面1、2和接合该两个主表面1和2的侧表面3a和3b。侧表面3a、3b中的至少一个包括用于嵌入配线元件5的纵向凹槽4。凹槽4由两个侧壁10a和10b限定，该两个侧壁10a和10b能够由面11接合到凹槽4的底部。
该类型的芯片可以为两个微电子部件的组合形式或者微电子部件6和对向板7的组合形式，如图2所示。两个部件或者部件和对向板具有基本上相同的尺寸，并且通过间隔物8而彼此接合。间隔物8的尺寸小于微电子部件6的尺寸，从而间隔物8的设置使得能自然获得至少一个凹槽4。芯片还可以包括位于间隔物8的每侧的两个凹槽，如图2所示。带有间隔物8的装配能使凹槽4通过芯片的装配而获得，从而避免了进行制造时可能很复杂且对芯片的完整性有风险的加工步骤。于是，凹槽4为U形，并由基本上平行的两个侧壁10a和10b限定，该两个侧壁10a和10b通过形成凹槽4的底部的面11而彼此接合。对向板7可以由玻璃、复合材料等制造。
芯片设计为通过配线元件5来连接，配线元件5由形成绳(strand)且彼此绝缘的至少两个导电配线形成。绳的意思是扭(twist)在一起的至少两个配线的组合。每个芯片的每个凹槽4包括至少一个导电凸块9，在配线元件5与微电子芯片装配之后该凸块9仅与绳的各导电配线中的一个的剥开区域电接触。如果位置适当，配线元件5可以通过简单的粘合固定到凹槽，例如通过在凹槽中插入环氧树脂胶而固定到凹槽。
形成绳的各导电配线的电绝缘优选通过涂敷每个导电配线的绝缘沉积物来实现。该绝缘沉积物可以为有机物例如热塑性塑料、环氧树脂胶，和/或无机物例如SiO2或氧化铝。因此，当绳插入凹槽4中时，覆盖每个导电配线的绝缘沉积物在配线与其凸块9抵靠(solicit)时被刺穿。于是，配线在剥开区域12(图4)的位置处与对应的凸块电接触，而在区域12外绝缘。当插入配线元件时，配线元件向对应的凸块9抵靠能使配线在接触区域12的位置处被刮开，从而自动剥开配线的一个区域。
组件可以包括通过绳连接的至少两个芯片。在每个芯片试图连接到其自己的配线的情形下，绳的每个导电配线与各自的一个芯片的凸块9接触。根据图8所示的具体示例，三个芯片由绳形式的配线元件5连接，该绳包括三个导电配线，每个导电配线通过连接凸块9电连接到一个芯片。芯片因此包括完全独立的数据总线。该原理自然可以应用于多个芯片，于是绳包括与组件包括的芯片一样多的导电配线。
根据替代实施例，绳的导电配线可以与至少两个芯片的凸块9电接触。因此，如图9所示，组件包括三个芯片，并且组件每个端部的芯片共享同一导电配线，该同一导电配线用作例如公共数据总线。
根据另一个替代实施例，芯片可以包括与绳的导电配线一样多的凸块。在图10所示具体示例的情况下，芯片包括三个凸块9，绳5由三个导电配线形成。每个凸块9与绳的一个导电配线接触，从而对于同一芯片而言能够使连接增加。
自然地，上述组件的三个示例不是限定性的。实际上可以设想任何类型的组件和连接，尤其是不同的类型可组合使用。构成绳的导电配线可以对应于数据总线或者电源连接。
在绝缘沉积物为热塑性塑料的情况下，当绳已经插入凹槽4且凸块9已经与对应的配线密切接触时，可以加热所获得的组件，以固定凹槽4中的绳，且同时在形成绳的不同配线之间保持电绝缘。
根据图2至5所示的设计，凸块9设置在凹槽4的至少一个侧壁10a、10b上，并且凸块9通过将绳夹在每个凸块9和凹槽4的与该对应的凸块9相对的侧壁10a之间而形成固定装置。凸块9在绳插入凹槽4时用作机械的夹紧钳。如图4所示，绳包括例如三个导电配线5a、5b和5c。这三个配线的扭转使得绳在围绕绳的纵轴A2螺旋缠绕的各导电配线之间自然产生间隙13(图5)。间隙13表示在绳的外表面位置处两个相邻配线之间的空间。
绳在间隙13位置处的直径Di小于绳的最大直径Dt，并小于凸块9和凹槽的与所述凸块9相对的侧壁10a分开的距离Dp。绳的最大直径Dt大于距离Dp，而保持为小于或等于两个侧壁10a和10b分开的距离D1。因此，当绳插入凹槽4时，绳优选设置为使凸块9面对间隙13，以使得绳能插入凹槽4中而不受压迫。由此，间隙13必须能够容纳凸块9而没有任何摩擦。一旦绳被插入，则绳将受到沿着凹槽4的纵轴A1(图3)施加的牵引力T，从而能使绳的配线5a、5b和5c与它们各自的凸块9接触(区域12)并实现在接触区域12的位置处绳的导电配线的剥开。通过在于凹槽4的侧壁10b上设置的凸块9和凹槽4的与凸块9相对的侧壁10a之间夹紧，牵引还能使绳被固定。绳通过夹紧而受到的挤压能使其固定在凹槽4中。
为了使通过夹紧的固定有效，优选构成绳的各导电配线的材料的可延展性大于构成凸块9及凹槽4的与凸块9相对的侧壁10a的材料，反之亦然。处于示例的目的，配线可以由银、铝或者铜制成。与凸块相对的侧壁可以由硅、玻璃、环氧树脂制成或者可能的话由厚度为500至5μm的氧化硅层或氮化硅层制成。凸块可以由覆盖金膜的镍、铜或者钨制成。
位于凹槽4的位置处的凸块9可以具有不同的形状。例如，如图5所示，它们可以具有细长的形状，并且设置为相对于凹槽4的纵轴A1倾斜。凸块9的倾斜优选平行于绳的间隙13的对应的局部倾斜，以便于绳插入凹槽4而不费力。于是，凸块9的倾斜取决于绳的扭曲节距。绳扭曲得越大，扭曲节距实际上将变得越小，即间隙的局部轴倾向于移动接近于绳的纵轴A2方向的垂直方向。绳固定在凹槽4中是通过绳的牵引来实现。如前所述，牵引能使绳在每个凸块9和凹槽4的与凸块9相对的侧壁10a之间夹紧。倾斜凸块9的使用意味着，当进行牵引时，绳将自然压向凹槽4的底部。绳的牵引还能使凸块9切开对应导电配线的绝缘沉积物，并在凸块9和对应导电配线间的界面位置产生接触。
为了改善配线及其凸块9之间在接触区域12位置处的接触，凸块9优选是锋利的，以改善配线的剥开和刺破。
凹槽可以包括单独设计的特定凸块以通过在凸块9和凹槽4的与所述凸块9相对的侧壁10a之间夹紧而使绳在凹槽中的固定得到改善。这意味着这些凸块是不活动的。
绳还可以包括不导电的细丝，以增加组件的强度。
在微电子芯片由两个电子部件6组成的情况下，凹槽可以包括在侧壁10a和10b的每一个上的凸块9。于是，电子部件可以共享特定的数据总线或者可以彼此不同地被连接。
总体上，装配方法包括形成嵌入凹槽4的绳。绳通过在每个凸块9和相对的侧壁10a之间夹紧而被固定。绳在导电配线的设计为与所述凸块接触的区域12处被剥开。
剥开由嵌入本身引起，即绳在它插入凹槽4时被嵌入并夹紧，或者剥开在绳已经嵌入凹槽之后通过沿着凹槽的纵轴A1牵引绳而引起。
根据设计，剥开在绳已经嵌入凹槽之后通过沿着凹槽的纵轴A1牵引绳来进行。
根据替代实施例，进行装配的方法包括：使导电配线插入凹槽4并位于每个导电凸块9和相对的侧壁10a之间。然后，扭曲配线使得绳直接形成在凹槽4中。最后，纵向牵引绳使得剥开区域形成在每个配线上，从而实现导电配线与相应凸块9的电接触。伴随着剥开，通过在凸块9和凹槽的与所述凸块相对的第二侧壁10a之间夹紧牵引使绳固定。图6和7示出了具体的示例。微电子芯片包括三个细长的凸块，凸块的长度小于或等于凹槽4的深度P。这些凸块垂直于形成凹槽4的底部的面11。根据该示例，彼此电绝缘的三个导电配线5a、5b和5c被并列插入凹槽4(图6)。每个配线5a、5b和5c的直径小于凸块9与相对侧壁10a分开的距离Dp，配线5a、5b和5c可以毫不费力地插入凹槽4。然后，三个配线直接在凹槽4中扭曲而形成绳(图7)。在制作绳时施加在配线之间的力足以产生将导电配线压向要连接的凸块9的力。扭曲节距调整为使每个配线与不同的凸块接触。然后，在每个配线的区域12上剥开通过沿着凹槽4的纵轴A1对绳进行牵引T而实现。牵引还通过在每个凸块9和凹槽4的与所述凸块9相对的侧壁10a之间夹紧而使绳被固定。
有利地，配线和凸块9之间的连接可以通过化学或者电化学方法而得到加强。凹槽4中绳的嵌入也可以通过电解或者通过在凹槽中插入电绝缘环氧树脂胶来得以稳固。
这里所述实施例的众多变化和修改对本领域的技术人员来说是显而易见的。处于示例的目的，已经描述了制作在凹槽的侧表面上以与绳的配线建立电接触的凸块9。可以设想建立接触的其它方法，例如从使绳的配线进入的凹槽底部突起，并使绳压向凹槽的底部。尽管已经描述了通过装配电子部件而获得的凹槽，但是也可以设想例如通过切割或者蚀刻在芯片块中制作凹槽。此外，容放绳的凹槽可以提供在芯片的任何表面上。芯片的表面还可以具有各种形状，例如平坦或者凸起。

Claims (11)

1.一种至少一个微电子芯片与配线元件(5)的组件，所述芯片包括用于嵌入所述配线元件的凹槽(4)，所述组件的特征在于，所述配线元件(5)是纵轴基本上平行于所述凹槽的轴的绳且包括覆盖有绝缘物质的至少两个导电配线，所述芯片包括位于所述凹槽(4)中的至少一个导电凸块(9)，所述凸块仅与所述绳的所述导电配线中的一个的剥开区域电接触。
2.根据权利要求1所述的组件，其中所述芯片包括两个平行的主表面(1、2)和侧表面(3a、3b)，该侧表面(3a、3b)中的至少一个包括用于嵌入所述配线元件的纵向凹槽(4)。
3.根据权利要求1或2所述的组件，其特征在于，所述组件包括通过所述绳连接的至少两个芯片，所述绳的一个导电配线与一个芯片的凸块(9)接触。
4.根据权利要求1或2所述的组件，其特征在于，所述绳的一个导电配线与至少两个芯片的所述凸块(9)接触。
5.根据权利要求1或2所述的组件，其特征在于，所述芯片包括与所述绳的不同的导电配线一样多的凸块(9)，每个凸块与所述绳的相应配线电接触。
6.根据权利要求1至5中任何一项所述的组件，其特征在于，每个凸块(9)至少设置在所述凹槽的第一侧壁(10b)上，并且每个凸块(9)构成用于通过在每个凸块(9)和所述凹槽的与所述凸块(9)相对的第二侧壁(10a)之间夹紧所述绳而使所述绳在所述凹槽(4)中固定的装置。
7.根据权利要求6所述的组件，其特征在于，每个凸块具有细长的形状，并且以相对于所述凹槽(4)的纵轴(A1)倾斜的方式设置。
8.一种实现根据权利要求6和7之一的组件的方法，其特征在于，该方法包括：形成嵌入所述凹槽的绳，所述绳通过在每个凸块(9)和与所述凸块(9)相对的所述侧壁(10a)之间夹紧而被固定，并且所述方法还包括剥开所述绳的所述导电配线的设计为与对应的凸块接触的区域(12)。
9.根据权利要求8所述的方法，其特征在于，在嵌入的同时进行剥开。
10.根据权利要求8所述的方法，其特征在于，在嵌入之后通过沿着所述凹槽(4)的纵轴牵引所述绳来进行剥开。
11.根据权利要求8所述的方法，其特征在于，在构成所述绳的所述配线插入所述凹槽(4)之后通过扭曲而形成嵌入的绳，然后通过牵引所述绳进行剥开和固定。
CN200980141702.9A 2008-10-21 2009-10-21 具有凹槽的微电子芯片与绳式配线元件的组件及装配方法 Expired - Fee Related CN102197481B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0805832A FR2937464B1 (fr) 2008-10-21 2008-10-21 Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
FR08/05832 2008-10-21
PCT/FR2009/001231 WO2010046563A1 (fr) 2008-10-21 2009-10-21 Assemblage d'une puce microélectronique à rainure avec un élément filaire sous forme de toron et procédé d'assemblage

Publications (2)

Publication Number Publication Date
CN102197481A true CN102197481A (zh) 2011-09-21
CN102197481B CN102197481B (zh) 2015-03-18

Family

ID=40786544

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980141702.9A Expired - Fee Related CN102197481B (zh) 2008-10-21 2009-10-21 具有凹槽的微电子芯片与绳式配线元件的组件及装配方法

Country Status (7)

Country Link
US (1) US8611101B2 (zh)
EP (1) EP2338175B1 (zh)
JP (1) JP5615825B2 (zh)
CN (1) CN102197481B (zh)
ES (1) ES2728687T3 (zh)
FR (1) FR2937464B1 (zh)
WO (1) WO2010046563A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019033266A (ja) * 2012-09-17 2019-02-28 コミッサリア ア レネルジー アトミーク エ オ エナジーズ アルタナティブス 溝付き及びチップ付きデバイス用のキャップ、キャップを装備するデバイス、デバイスと配線要素のアセンブリ、及びその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2928491A1 (fr) * 2008-03-06 2009-09-11 Commissariat Energie Atomique Procede et dispositif de fabrication d'un assemblage d'au moins deux puces microelectroniques
FR2937464B1 (fr) * 2008-10-21 2011-02-25 Commissariat Energie Atomique Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
FR2954588B1 (fr) 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
FR2955972B1 (fr) * 2010-02-03 2012-03-09 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un tissu incluant un dispositif a puce
FR2960339B1 (fr) * 2010-05-18 2012-05-18 Commissariat Energie Atomique Procede de realisation d'elements a puce munis de rainures d'insertion de fils
FR2964786B1 (fr) * 2010-09-09 2013-03-15 Commissariat Energie Atomique Procédé de réalisation d'éléments a puce munis de rainures d'insertion de fils
FR3065579B1 (fr) * 2017-04-19 2019-05-03 Primo1D Dispositif d'emission reception radiofrequence
FR3076071B1 (fr) * 2017-12-21 2019-11-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’une puce a circuit integre et puce a circuit integre
DE102021111894A1 (de) 2021-05-06 2022-11-10 Mühlbauer ID Services GmbH Sicherheitsdokument mit fadenartigem sicherheitselement und verfahren und vorrichtung zu seiner herstellung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023530A1 (en) * 2002-07-31 2004-02-05 Garcia Steven E. Z-axis connection of multiple substrates by partial insertion of bulges of a pin
US20050223552A1 (en) * 2004-04-08 2005-10-13 Neal Meyer Bonding an interconnect to a circuit device and related devices
CN1784631A (zh) * 2003-05-06 2006-06-07 金泰克斯公司 车辆后视镜元件及安装有这些元件的组合件
US20060278997A1 (en) * 2004-12-01 2006-12-14 Tessera, Inc. Soldered assemblies and methods of making the same
WO2008025899A1 (fr) * 2006-08-30 2008-03-06 Vernet Vanne thermostatique destinee a etre interposee entre un reservoir de carburant et un moteur thermique, et circuit de circulation de carburant correspondant

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3736366A (en) * 1972-04-27 1973-05-29 Bell Telephone Labor Inc Mass bonding of twisted pair cables
US4319075A (en) * 1981-01-26 1982-03-09 Amp Inc. Sealed routing of undercarpet cable
US4471415A (en) * 1983-06-20 1984-09-11 Wilbrecht Electronics, Inc. Mounting bar for spacing indicator lights
US4741707A (en) * 1986-02-19 1988-05-03 Woven Electronics Corporation Method and woven cable termination with insulation displaceable connector
US4934045A (en) * 1988-02-05 1990-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of producing electric circuit patterns
FR2637150B1 (fr) * 1988-09-23 1995-07-28 Neiman Sa Reseau de diodes electroluminescentes
US4999755A (en) * 1990-06-07 1991-03-12 Lin Tak Huei Tube light
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
US5957564A (en) * 1996-03-26 1999-09-28 Dana G. Bruce Low power lighting display
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
DE19737978C2 (de) * 1997-08-30 1999-09-16 Bayer Ag Elektrochromer Spiegel
US6050845A (en) * 1997-11-20 2000-04-18 The Whitaker Corporation Electrical connector for terminating insulated conductors
FR2804797B1 (fr) * 2000-02-07 2004-07-02 Entrelec Sa Dispositif de connexion auto-denudant pour deux cables electriques
DE10060070C2 (de) * 2000-12-01 2003-04-30 Webasto Vehicle Sys Int Gmbh Kabelbaumanordnung, insbesondere für Fahrzeuge
JP2002176069A (ja) * 2000-12-06 2002-06-21 Nec Corp 電気的接続端子の構造とその製造方法
US6394833B1 (en) * 2001-04-25 2002-05-28 Miraco, Inc. Flat flexible cable connector
JP2004265888A (ja) * 2003-01-16 2004-09-24 Sony Corp 半導体装置及びその製造方法
US20040217488A1 (en) * 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
JP4979376B2 (ja) * 2003-05-06 2012-07-18 ジェンテックス コーポレイション 車両用バックミラー要素及びこれらの要素を組み込むアセンブリ
US7128438B2 (en) * 2004-02-05 2006-10-31 Agilight, Inc. Light display structures
JP4777759B2 (ja) * 2005-12-01 2011-09-21 富士フイルム株式会社 配線基板及び配線基板接続装置
US7753715B2 (en) * 2006-01-04 2010-07-13 Anthony Freakes Electrical connector devices and methods for employing same
FR2905518B1 (fr) * 2006-08-29 2008-12-26 Commissariat Energie Atomique Puce microelectronique a faces laterales munies de rainures et procede de fabrication
US7604498B2 (en) * 2006-09-22 2009-10-20 Kamal Mahajan Insulation-displacement connector
US7320616B1 (en) * 2006-11-10 2008-01-22 Zierick Manufacturing Corp. Insulation displacement connector assembly and system adapted for surface mounting on printed circuit board and method of using same
FR2917895B1 (fr) 2007-06-21 2010-04-09 Commissariat Energie Atomique Procede de fabrication d'un assemblage de puces reliees mecaniquement au moyen d'une connexion souple
TWI370714B (en) * 2008-01-09 2012-08-11 Ind Tech Res Inst Circuit structure and menufacturing method thereof
FR2928491A1 (fr) * 2008-03-06 2009-09-11 Commissariat Energie Atomique Procede et dispositif de fabrication d'un assemblage d'au moins deux puces microelectroniques
FR2937464B1 (fr) * 2008-10-21 2011-02-25 Commissariat Energie Atomique Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
US8025522B2 (en) * 2008-10-31 2011-09-27 Anthony Freakes Insulation displacement connector
FR2940486B1 (fr) * 2008-12-22 2011-02-11 Commissariat Energie Atomique Procede de fabrication d'un assemblage de puces a moyens d'emission-reception radiofrequence reliees mecaniquement au moyen d'un ruban et assemblage
FR2954588B1 (fr) * 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
US8382534B2 (en) * 2010-04-22 2013-02-26 Saint-Gobain Performance Plastics Corporation System, method and apparatus for stranded canted coil spring
FR2960339B1 (fr) * 2010-05-18 2012-05-18 Commissariat Energie Atomique Procede de realisation d'elements a puce munis de rainures d'insertion de fils
FR2964786B1 (fr) * 2010-09-09 2013-03-15 Commissariat Energie Atomique Procédé de réalisation d'éléments a puce munis de rainures d'insertion de fils

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023530A1 (en) * 2002-07-31 2004-02-05 Garcia Steven E. Z-axis connection of multiple substrates by partial insertion of bulges of a pin
CN1784631A (zh) * 2003-05-06 2006-06-07 金泰克斯公司 车辆后视镜元件及安装有这些元件的组合件
US20050223552A1 (en) * 2004-04-08 2005-10-13 Neal Meyer Bonding an interconnect to a circuit device and related devices
US20060278997A1 (en) * 2004-12-01 2006-12-14 Tessera, Inc. Soldered assemblies and methods of making the same
WO2008025899A1 (fr) * 2006-08-30 2008-03-06 Vernet Vanne thermostatique destinee a etre interposee entre un reservoir de carburant et un moteur thermique, et circuit de circulation de carburant correspondant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019033266A (ja) * 2012-09-17 2019-02-28 コミッサリア ア レネルジー アトミーク エ オ エナジーズ アルタナティブス 溝付き及びチップ付きデバイス用のキャップ、キャップを装備するデバイス、デバイスと配線要素のアセンブリ、及びその製造方法

Also Published As

Publication number Publication date
EP2338175B1 (fr) 2019-04-03
CN102197481B (zh) 2015-03-18
FR2937464A1 (fr) 2010-04-23
US8611101B2 (en) 2013-12-17
FR2937464B1 (fr) 2011-02-25
JP5615825B2 (ja) 2014-10-29
JP2012506631A (ja) 2012-03-15
ES2728687T3 (es) 2019-10-28
WO2010046563A1 (fr) 2010-04-29
US20110198735A1 (en) 2011-08-18
EP2338175A1 (fr) 2011-06-29

Similar Documents

Publication Publication Date Title
CN102197481B (zh) 具有凹槽的微电子芯片与绳式配线元件的组件及装配方法
JP5341114B2 (ja) ワイヤ素子とワイヤ素子を固定する少なくとも１つのバンプを備えた溝を有するマイクロエレクトロニックチップのアセンブリ
CN101471335B (zh) 发光模块的制造方法
JP5531119B2 (ja) 一体式結合取付部材
KR101285245B1 (ko) 전기적 플랫 연결 요소를 갖는 창유리
WO2013015076A1 (ja) 端子付き電線およびその製造方法
WO2014185262A1 (ja) 端子付電線
US10033116B2 (en) Terminal, terminal-equipped electrical wire, and method for manufacturing terminal-equipped electrical wire
RU2490763C2 (ru) Электрическое контактное соединение и способ создания электрического контактного соединения
CN104937732A (zh) Led金属基板封装及其制造方法
JP5290885B2 (ja) 導体と端子の接続方法
CN1898992A (zh) 尤其用于喷塑装置的在表面元件和加热元件上附着电气引线的方法
CN105336631B (zh) 使用两个引线框架组装的半导体装置
CN205319149U (zh) 半导体封装体
JP2011060524A5 (zh)
JP2017183184A (ja) 端子部付き電線及びその製造方法
JP5263021B2 (ja) 細径同軸ケーブルアレイ及びその製造方法
JP2004134275A (ja) 接続端子およびその製造方法
JP6158539B2 (ja) 電線の分岐構造
US20170062375A1 (en) Semiconductor device
TW200849654A (en) LED packaging base unit and manufacturing method thereof
KR20130123519A (ko) 자동차용 엘이디 램프의 플렉시블 피시비
JP2021150239A (ja) 絶縁電線
EP1271648A1 (en) Power semiconductor package and method for making the same
JP2009151941A (ja) 圧着端子の被覆電線への接続構造

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150318

Termination date: 20181021