CN102194987A - 发光装置封装元件 - Google Patents
发光装置封装元件 Download PDFInfo
- Publication number
- CN102194987A CN102194987A CN201010243652XA CN201010243652A CN102194987A CN 102194987 A CN102194987 A CN 102194987A CN 201010243652X A CN201010243652X A CN 201010243652XA CN 201010243652 A CN201010243652 A CN 201010243652A CN 102194987 A CN102194987 A CN 102194987A
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- Prior art keywords
- chip
- light
- bond pad
- emitting device
- carrier
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/715,795 | 2010-03-02 | ||
US12/715,795 US8183578B2 (en) | 2010-03-02 | 2010-03-02 | Double flip-chip LED package components |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102194987A true CN102194987A (zh) | 2011-09-21 |
CN102194987B CN102194987B (zh) | 2013-06-12 |
Family
ID=44530537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010243652XA Active CN102194987B (zh) | 2010-03-02 | 2010-07-30 | 发光装置封装元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8183578B2 (zh) |
CN (1) | CN102194987B (zh) |
TW (1) | TWI535075B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165805A (zh) * | 2011-12-08 | 2013-06-19 | 新世纪光电股份有限公司 | 电子元件 |
CN105390467A (zh) * | 2014-08-22 | 2016-03-09 | 三星电子株式会社 | 芯片堆叠半导体封装件 |
CN106662309A (zh) * | 2014-08-08 | 2017-05-10 | 皇家飞利浦有限公司 | 具有柔性热界面的led设备 |
CN107452692A (zh) * | 2016-05-31 | 2017-12-08 | 台湾积体电路制造股份有限公司 | 层叠封装器件 |
CN110660893A (zh) * | 2019-09-06 | 2020-01-07 | 深圳市银宝山新科技股份有限公司 | 发光元件封装结构及其制作方法、制作设备 |
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---|---|---|---|---|
US8526186B2 (en) * | 2011-07-11 | 2013-09-03 | Texas Instruments Incorporated | Electronic assembly including die on substrate with heat spreader having an open window on the die |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060278885A1 (en) * | 2005-06-14 | 2006-12-14 | Industrial Technology Research Institute | LED wafer-level chip scale packaging |
CN1992362A (zh) * | 2005-12-27 | 2007-07-04 | 株式会社东芝 | 光半导体器件以及其制造方法 |
US20070257272A1 (en) * | 2006-05-03 | 2007-11-08 | Hutchins Edward L | Multi-element LED lamp package |
CN101779300A (zh) * | 2007-07-11 | 2010-07-14 | 希爱化成株式会社 | 发光装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
US7989270B2 (en) * | 2009-03-13 | 2011-08-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors |
-
2010
- 2010-03-02 US US12/715,795 patent/US8183578B2/en active Active
- 2010-07-27 TW TW099124661A patent/TWI535075B/zh active
- 2010-07-30 CN CN201010243652XA patent/CN102194987B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060278885A1 (en) * | 2005-06-14 | 2006-12-14 | Industrial Technology Research Institute | LED wafer-level chip scale packaging |
CN1992362A (zh) * | 2005-12-27 | 2007-07-04 | 株式会社东芝 | 光半导体器件以及其制造方法 |
US20070257272A1 (en) * | 2006-05-03 | 2007-11-08 | Hutchins Edward L | Multi-element LED lamp package |
CN101779300A (zh) * | 2007-07-11 | 2010-07-14 | 希爱化成株式会社 | 发光装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165805A (zh) * | 2011-12-08 | 2013-06-19 | 新世纪光电股份有限公司 | 电子元件 |
CN103165805B (zh) * | 2011-12-08 | 2016-09-14 | 新世纪光电股份有限公司 | 电子元件 |
CN106662309A (zh) * | 2014-08-08 | 2017-05-10 | 皇家飞利浦有限公司 | 具有柔性热界面的led设备 |
CN105390467A (zh) * | 2014-08-22 | 2016-03-09 | 三星电子株式会社 | 芯片堆叠半导体封装件 |
CN105390467B (zh) * | 2014-08-22 | 2019-01-25 | 三星电子株式会社 | 芯片堆叠半导体封装件 |
CN107452692A (zh) * | 2016-05-31 | 2017-12-08 | 台湾积体电路制造股份有限公司 | 层叠封装器件 |
CN110660893A (zh) * | 2019-09-06 | 2020-01-07 | 深圳市银宝山新科技股份有限公司 | 发光元件封装结构及其制作方法、制作设备 |
Also Published As
Publication number | Publication date |
---|---|
US8183578B2 (en) | 2012-05-22 |
TW201131830A (en) | 2011-09-16 |
TWI535075B (zh) | 2016-05-21 |
US20110215354A1 (en) | 2011-09-08 |
CN102194987B (zh) | 2013-06-12 |
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Effective date of registration: 20160504 Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. Effective date of registration: 20160504 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. |