CN102194671A - Method for growing varied buffer layer on substrate - Google Patents
Method for growing varied buffer layer on substrate Download PDFInfo
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- CN102194671A CN102194671A CN2011101218999A CN201110121899A CN102194671A CN 102194671 A CN102194671 A CN 102194671A CN 2011101218999 A CN2011101218999 A CN 2011101218999A CN 201110121899 A CN201110121899 A CN 201110121899A CN 102194671 A CN102194671 A CN 102194671A
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Abstract
The invention discloses a method for growing a varied buffer layer on a substrate. The method comprises the following steps: 1, preparing a substrate; 2, growing a buffer layer on the substrate; 3, growing a varied buffer layer on the buffer layer; 4, growing an epitaxial layer on the varied buffer layer to form a chip and 5, finally cooling the chip.
Description
Technical field
The invention belongs to semi-conducting material and device technology field, relate to a kind of growing method of InGaAs mutation resilient coating, particularly about a kind of on substrate the method for growth mutation resilient coating
Background technology
Since be subjected to lattice match with can be with the restriction of band gap, 1.31-1.55 mu m waveband near-infrared semiconductor photoelectric device mainly adopts the InGaAsP/InP material system at present, but this material system can be with weak, low, the more high shortcoming of cost of device feature temperature of the little carrier confinement in conduction band rank, the research and development good stability, be easy to integrated photoelectric device and be subjected to exceptional hardship.Therefore, closely seek high characteristic temperature of new generation during the last ten years, other more cheap substrate near-infrared materials become important subject.Other one big system of near-infrared material is the GaAs sill, its cost is lower, conduction band band rank are big, can adopt GaAs/AlGaAs distributed bragg reflector mirror (DBR) to realize vertical integrated device, so GaAs base 1.31-1.55 micron photoelectric material and device research are subjected to extensive attention.
GaAs base active layer material mainly is low In component I nGaAs/GaAs strained quantum well (quantum well bed thickness and In component are less than the critical value of Stress Release) or self-organizing InAs/GaAs quantum dot (the quantum dot yardstick determines its emission wavelength), be subjected to the lattice match condition restriction equally, the emission wavelength that obtains also only is in 1.31 micron wavebands at present, is difficult to reach 1.55 mu m wavebands.The emission wavelength of InGaAs/GaAs quantum well, InAs/GaAs quantum dot to be further expanded, the restriction of lattice match must be overcome.Just on the GaAs base, realize the big In component I n that energy gap is big, lattice constant is big
xGa
1-xAs mutation epitaxial loayer (extension bed thickness and In component are greater than the Stress Release critical value), make the lattice constant of epitaxial loayer from the GaAs material transition to In
xGa
1-xThe As material.The technological difficulties of this scheme are how to obtain high-flatness, dislocation defect is little, simultaneously misfit dislocation is limited in as far as possible the In within the transition zone
xGa
1-xAs mutation epitaxial loayer is to reduce the quantum well of growing on the mutation layer, the dislocation density (non-radiative recombination center) of quantum dot active layer to greatest extent.Therefore, can on the GaAs substrate, obtain high-quality In
xGa
1-xAs mutation layer is a key problem in technology of realizing GaAs based 1.5 5 mu m waveband InGaAs quantum well or InAs quantum dot.
This lattice mismatch InGaAs/GaAs mutation material is also brought into play key effect in the multichip semiconductor knot high performance solar batteries research of rising in recent years except the long wavelength light communication device that can be applied to the emission wavelength expansion.Adopt the heterogeneous knot battery strings of a plurality of different energy gaps to connect structure, the multijunction solar cell development in recent years that absorbs the different-waveband solar spectrum respectively is rapid, it is at present the highest 35% or more (under the non-optically focused condition) that the photoelectric conversion efficiency that has wherein adopted the InGaAs mutation to become three node solar batteries of a knot battery has reached, and it is one of deciding factor that quality of materials is tied in its InGaAs mutation.
Therefore, InGaAs mutation material structure design growing technology is the key technology that many-sides such as all kinds of optic communication devices, solar cell device have extremely important using value.
Summary of the invention
The objective of the invention is to, provide a kind of on substrate the method for growth mutation resilient coating, this method can effectively limit epitaxial loayer with substrate because the dislocation that lattice mismatch produces, reduce the defect concentration of epitaxial loayer, the raising epitaxial layer quality.
The invention provides a kind of method of the mutation resilient coating of on substrate, growing, comprise the steps:
Step 1: get a substrate;
Step 2: grown buffer layer on substrate;
Step 3: growth mutation resilient coating on resilient coating;
Step 4:, form substrate at mutation buffer growth epitaxial loayer;
Step 5:, finish the preparation of growth mutation resilient coating on substrate to the substrate processing of lowering the temperature.
The material of wherein said substrate is GaAs or indium phosphide.
Wherein when substrate was GaAs, the material of resilient coating was identical with the material of substrate; When substrate is indium phosphide, the material of resilient coating be indium phosphide or with the InGaAs of indium phosphide lattice match.
Wherein the mutation resilient coating is the multicycle structure, and its periodicity is 5-20.
Wherein each cycle of mutation resilient coating comprises:
One InGaAs layer and the thin layer of growing thereon.
Wherein the material of thin layer is GaAs or aluminium arsenide.
Wherein the indium component of the InGaAs layer in each periodic structure of mutation resilient coating increases progressively from bottom to up, and the amplitude of increasing progressively is 0.02-0.05, and the growth temperature in each cycle is 500-350 ℃, and the growth temperature in each cycle reduces 0-15 ℃ gradually along with the increase of indium component.
Wherein the thickness of InGaAs layer is 100-300nm.
Wherein the thickness of thin layer is 1.5-5nm.
Wherein the material of epitaxial loayer is InGaAs, InAlAs or InAlGaAs.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is a structural representation of the present invention.
Embodiment
See also shown in Figure 1, the invention provides a kind of on substrate the method for growth mutation resilient coating, comprise the steps:
Step 1: get a substrate 10, the material of described substrate 10 is GaAs or indium phosphide;
Step 2: grown buffer layer 11 on substrate 10, and wherein when substrate 10 was GaAs, the material of resilient coating 11 was identical with the material of substrate 10; When substrate 10 is indium phosphide, the material of resilient coating 11 be indium phosphide or with the InGaAs of indium phosphide lattice match;
Step 3: growth mutation resilient coating 12 on resilient coating 11, this mutation resilient coating 12 is the multicycle structure, and its periodicity is 5-20, and each cycle of this mutation resilient coating 12 comprises:
One InGaAs layer 121 and the thin layer 122 of growing thereon, the thickness of this InGaAs layer 121 is 100-300nm, and the material of this thin layer 122 is GaAs or aluminium arsenide, and the thickness of this thin layer 122 is 1.5-5nm;
Wherein the indium component of the InGaAs layer 121 in these mutation resilient coating 12 each periodic structures increases progressively from bottom to up, the amplitude of increasing progressively is 0.02-0.05, the growth temperature in each cycle is 500-350 ℃, the growth temperature in each cycle reduces 0-15 ℃ gradually along with the increase of indium component, and the growth temperature that reduces InGaAs layer 121 helps improving the surface smoothness of InGaAs layer 121;
Adopt in the process of this mutation resilient coating 12 of molecular beam epitaxial growth, behind each cycle growth ending of this mutation resilient coating 12, growth pause 5-10 minute, in this growth dead time, adjust growth temperature to needed growth temperature of following one-period, adjust the indium component of indium component InGaAs layer 121 to the following one-period;
Wherein this mutation resilient coating in 12 each cycle the effect of thin layer 122 are the InGaAs layers 121 that before growth pauses, cover in this cycle, phosphide atom is attached from InGaAs layer 121 surface desorption in the pause process of avoiding growing;
Wherein the periodicity of this mutation resilient coating 12 increases progressively in amplitude and the mutation resilient coating 12 last cycle InGaAs layer 121 according to the indium component of InGaAs layer 121 and determines with the difference of the indium component of period 1 InGaAs layer 121;
Step 4:, form substrate at mutation resilient coating 12 grown epitaxial layers 13;
Behind last cycle growth ending of mutation resilient coating 12, growth pause 5-10 minute in this growth dead time, is adjusted growth temperature to epitaxial loayer 13 needed growth temperatures, adjusts the indium component of indium component to epitaxial loayer 13;
The material of epitaxial loayer 13 is InGaAs, InAlAs or InAlGaAs, and the indium component of these epitaxial loayer 13 materials is than the low 0-0.1 of indium component of last cycle InGaAs layer 121 in the mutation resilient coating 12;
The effect of mutation resilient coating 12 is to filter between epitaxial loayer 13 and the substrate 10 because the dislocation that lattice mismatch produces reduces the dislocation density in epitaxial loayer 13 materials, the crystal mass of raising epitaxial loayer 13 materials.
This substrate can be used for growth and preparation and epitaxial loayer 13 material lattice matched materials and devices.
Step 5:, finish the preparation of growth mutation resilient coating on substrate to the substrate processing of lowering the temperature.
Example
Please consult again shown in Figure 1, the invention provides a kind of on substrate the method for growth mutation resilient coating, comprise the steps:
Step 1: get a substrate 10, the material of described substrate 10 is a GaAs;
Step 2: grown buffer layer 11 on substrate 10, and wherein substrate 10 is a GaAs, and the material of resilient coating 11 is identical with the material of substrate 10;
Step 3: growth mutation resilient coating 12 on resilient coating 11, this mutation resilient coating 12 is the multicycle structure, and its periodicity is 10, and each cycle of this mutation resilient coating 12 comprises:
One InGaAs layer 121 and the thin layer 122 of growing thereon, the top one deck regrowth one deck InGaAs layer 121 of this mutation resilient coating 12, the thickness of this InGaAs layer 121 is 200nm, and the material of this thin layer 122 is an aluminium arsenide, and the thickness of this AlAs thin layer 122 is 2nm;
Wherein the indium component of the InGaAs layer 121 in these mutation resilient coating 12 each periodic structures increases progressively from bottom to up, and the amplitude of increasing progressively is 0.02, and the growth temperature in each cycle is 500-350 ℃, and the growth temperature in each cycle reduces 0-15 ℃ gradually along with the increase of indium component;
Step 4:, form substrate at mutation resilient coating 12 grown epitaxial layers 13;
Step 5:, finish the preparation of growth mutation resilient coating on substrate to the substrate processing of lowering the temperature.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the method for a growth mutation resilient coating on substrate comprises the steps:
Step 1: get a substrate;
Step 2: grown buffer layer on substrate;
Step 3: growth mutation resilient coating on resilient coating;
Step 4:, form substrate at mutation buffer growth epitaxial loayer;
Step 5:, finish the preparation of growth mutation resilient coating on substrate to the substrate processing of lowering the temperature.
2. the method for the mutation resilient coating of growing on substrate according to claim 1, the material of wherein said substrate is GaAs or indium phosphide.
3. the method for the mutation resilient coating of on substrate, growing according to claim 1, wherein when substrate was GaAs, the material of resilient coating was identical with the material of substrate; When substrate is indium phosphide, the material of resilient coating be indium phosphide or with the InGaAs of indium phosphide lattice match.
4. the method for the mutation resilient coating of on substrate, growing according to claim 1, wherein the mutation resilient coating is the multicycle structure, its periodicity is 5-20.
5. the method for the mutation resilient coating of on substrate, growing according to claim 1, wherein each cycle of mutation resilient coating comprises:
One InGaAs layer and the thin layer of growing thereon.
6. the method for the mutation resilient coating of growing on substrate according to claim 1, wherein the material of thin layer is GaAs or aluminium arsenide.
7. the method for the mutation resilient coating of on substrate, growing according to claim 1, wherein the indium component of the InGaAs layer in each periodic structure of mutation resilient coating increases progressively from bottom to up, the amplitude of increasing progressively is 0.02-0.05, the growth temperature in each cycle is 500-350 ℃, and the growth temperature in each cycle reduces 0-15 ℃ gradually along with the increase of indium component.
8. the method for the mutation resilient coating of growing on substrate according to claim 1, wherein the thickness of InGaAs layer is 100-300nm.
9. the method for the mutation resilient coating of growing on substrate according to claim 1, wherein the thickness of thin layer is 1.5-5nm.
10. the method for the mutation resilient coating of growing on substrate according to claim 1, wherein the material of epitaxial loayer is InGaAs, InAlAs or InAlGaAs.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101218999A CN102194671B (en) | 2011-05-11 | 2011-05-11 | Method for growing varied buffer layer on substrate |
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|---|---|---|---|
| CN2011101218999A CN102194671B (en) | 2011-05-11 | 2011-05-11 | Method for growing varied buffer layer on substrate |
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| CN102194671A true CN102194671A (en) | 2011-09-21 |
| CN102194671B CN102194671B (en) | 2012-08-15 |
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| CN2011101218999A Expired - Fee Related CN102194671B (en) | 2011-05-11 | 2011-05-11 | Method for growing varied buffer layer on substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623575A (en) * | 2012-04-17 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Structure and method for growing indium gallium arsenide (InGaAs) battery layer on indium phosphide (InP) substrate |
| CN104008960A (en) * | 2013-02-22 | 2014-08-27 | 北京邮电大学 | Metamorphic epitaxial growth method based on nano patterned substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156301A (en) * | 1999-11-25 | 2001-06-08 | Toyota Central Res & Dev Lab Inc | Resonance tunnel equipment |
| JP2005101119A (en) * | 2003-09-24 | 2005-04-14 | Hitachi Cable Ltd | Compound semiconductor epitaxial wafer |
| US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
| CN101192517A (en) * | 2006-12-01 | 2008-06-04 | 中国科学院半导体研究所 | Gallium arsenide substrate multiple layer deformation buffer layer manufacture method |
| JP2009283801A (en) * | 2008-05-26 | 2009-12-03 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
-
2011
- 2011-05-11 CN CN2011101218999A patent/CN102194671B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156301A (en) * | 1999-11-25 | 2001-06-08 | Toyota Central Res & Dev Lab Inc | Resonance tunnel equipment |
| US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
| JP2005101119A (en) * | 2003-09-24 | 2005-04-14 | Hitachi Cable Ltd | Compound semiconductor epitaxial wafer |
| CN101192517A (en) * | 2006-12-01 | 2008-06-04 | 中国科学院半导体研究所 | Gallium arsenide substrate multiple layer deformation buffer layer manufacture method |
| JP2009283801A (en) * | 2008-05-26 | 2009-12-03 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623575A (en) * | 2012-04-17 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Structure and method for growing indium gallium arsenide (InGaAs) battery layer on indium phosphide (InP) substrate |
| CN104008960A (en) * | 2013-02-22 | 2014-08-27 | 北京邮电大学 | Metamorphic epitaxial growth method based on nano patterned substrate |
| CN104008960B (en) * | 2013-02-22 | 2016-10-12 | 北京邮电大学 | A kind of mutation epitaxial growth method based on nano graph substrate |
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| CN102194671B (en) | 2012-08-15 |
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